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DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic estimates which do not bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is made of the contents of this report. The quoted trademarks are property of their owners.
© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 1
Electronic Costing & Technology Experts
www.systemplus.fr21 rue la Nouë Bras de Fer44200 Nantes – France Phone : +33 (0) 240 180 916 email : [email protected]
March 2015 - Version 1 - Written by Sylvain Hallereau
CREE – CAS300M17BM2
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© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 2
Glossary1. Overview / Introduction 4
– Executive Summary
– Reverse Costing Methodology
2. Company Profile 7
3. CAS300M17BM2 Characteristics 9
4. Physical Analysis 13– Synthesis of the Physical Analysis
4.1 Package analysis– View and dimensions and marking
– Housing
– Base Plate Cross-Section
– DBC Cross-Section
4.2 MOSFET Analysis
– Dimension
– Gate Supply Line and Guard Ring
– Trench Gate Cross-Section
– Revelation
4.3 Z-Rec Diode Analysis
– Dimension
– Guard Ring
– Revelation
4.4 Comparison CAS300M17BM2 and CAS120M12BM2
– Module
– MOSFET
– Diode
5. Manufacturing Process Flow 85 – Overview
– MOSFET and Diode Process Flow
– Description of the Wafer Fabrication Units
– MOSFET Process Flow
– Diode Process Flow
– Package Process Flow
6. Cost Analysis 104– Synthesis of the Cost Analysis
– Main Steps of Economic Analysis
– Yields Explanation
6.1 Cost Analysis MOSFET
– Wafer Cost Hypothesis
– MOSFET Wafer Cost
– Breakdown per process step
– MOSFET Probe Cost
– MOSFET Die cost
6.2 Cost Analysis Diode
6.3 Cost Analysis CAS300M17BM2
– Assessing BOM
– DBC Cost
– CAS300M17BM2 Module Cost
– Yield Synthesis
7. Estimated Manufacturer Price Analysis 135– Manufacturers ratios
– Estimated manufacturer Price
Contact
CREE – CAS300M17BM2
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© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 3
• This full reverse costing study has been conducted to provide insight on technology data,manufacturing cost and selling price of the CREE CAS300M17BM2.
• The CAS300M17BM2 from CREE is a new generation SiC MOSFET high-voltage power module.With a breakdown voltage of 1700V for a current of 225A at 90°C, the module is optimized for:
• HF Resonant Converters/Inverters• Solar and Wind Inverters• UPS and SMPS• Motor Drive• Traction.
• The CAS300M17BM2 is an all Silicon Carbide Half-Bridge Module with new C2M SiC MOSFET andZ-Rec Diode from CREE. The module is designed and manufactured by CREE.
• The CAS300M17BM2 offers a very low on-resistance (8 mΩ) and a higher operating temperature(up to 150 °C) in a 62mm x 106mm x 30mm package.
• A comparison between the CAS300M17BM2 and the CAS120M12BM2 is done in this report.
• The manufacturing of the SiC MOSFET and Z-rec Diode are realized by CREE in its 100mm waferfoundry in Durham, NC, USA. We estimate that the assembly module and final test (Back-end) arerealized by Powerex and are assumed to take place in the USA.
CREE – CAS300M17BM2
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© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 4
Package:
Dimensions: 106mm x62mm x30 mm
Number of Pins: 3- screw pin
Half bridge power module
Module package
Diode
SiC MOSFET
Diode:
Dimensions: XX x XXmm2
Electrical Connection: 5x 440 µm Al wire bonding
Placement in the package: soldered on DBC
MOSFET:
Dimension: XX x XX mm2
Electrical Connection: 5x 440 µm Al wire bonding
Placement in the package: soldered on DBC.
CREE – CAS300M17BM2
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© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 5
• Die dimensions: XXmm x XXmm = XXXmm²
• Active area: XXmm x XXmm = XXmm²
• Active area = XX% of the surface
• Thickness: XXµm
• 7 wire bonds
• No die markings
• Drain contact at die bottom
gate pad
source pads
Polyimide on the periphery
Passivation layer
Cross-Section : SEM view
SiC: XXµm
CREE – CAS300M17BM2
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© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 6
Oxide
XXµm
XX µm
Aluminum source metal
Gate
Drain
Source
Si-O
MOSFET gate : SEM view
XX µm
CREE – CAS300M17BM2
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© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 7
• Die dimensions: XXmm x XXmm
• 5 wire bonds
• No die markings
CREE – CAS300M17BM2
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© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 8
00 00 0
Implantations
• SiO2 deposition
•Pattern SiO2
•P well implantation
Implantations
• SiO2 deposition
•Pattern SiO2
•N+ source implantation
Implantations
•XX
•XX
•XX
Drawing not to Scale
N+ Source implantation
00 00 000
0
CREE – CAS300M17BM2
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© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 9
• The front-end cost ranges from $xx to $xxaccording to yield variations.
• The high cost of the wafer explain the portionof the manufacturing cost is due to yieldlosses in the cost.
• The manufacturing yield is between xx% andxx% in 2015.
CREE – CAS300M17BM2
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© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 10
• The assembled module cost is estimated between $XX and $XX according to the yield.• The DBC cost accounts for XX% of the cost .• The copper base plate cost account for XX% of the cost.•The added value cost is $XX• The scrap cost (medium yield, XX%) is the total of all the losses during the assembly and the test.
CREE – CAS300M17BM2
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© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 11
• The assembled module cost is estimatedbetween $XX and $XX according to the yieldvariation.
• The MOSFET dies represents XX% and thediode dies represents XX% of the totalmanufacturing cost. The silicon carbiderepresents XX% of the total manufacturingcost, medium yield.
• The packaging cost (BOM + added value)represents XX% of the total manufacturingcost, medium yield.
CREE – CAS300M17BM2
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© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 12
Reverse costing analysis represents the best cost/price evaluation given the publically available data, and estimates completed by industry experts.
Given the hypothesis presented in this analysis, the major sources of correction would lead to a +/- 10% correction on the manufacturing cost (if all parameters are cumulated).
These results are open for discussion. We can reevaluate this circuit with your information. Please contact us:
• Consulting and Specific Analysis
– North America: Steve LaFerriere, Director of Northern America Business Development, Yole Inc.Email: [email protected]
– Japan: Yutaka Katano, General Manager, Yole Japan & President, Yole K.K.Email: [email protected]
– RoW: Jean-Christophe Eloy, President & CEO, Yole DéveloppementEmail: [email protected]
• Report business
– North America: Steve LaFerriere, Director of Northern America Business Development, Yole Inc.Email: [email protected]
– Europe: Fayçal El Khamassi, Headquarter Sales Coordination & Customer Service Email: [email protected]
– Japan & Asia: Takashi Onozawa, Sales Asia & General Manager, Yole K.K.Email: [email protected]
– Korea: Hailey Yang, Business Development Manager, Korean OfficeEmail: [email protected]
• Financial services
– Jean-Christophe Eloy, CEO & PresidentEmail: [email protected]
• General
– Email: [email protected]
