SCT2H12NY : SiC Power DevicesDatasheet SCT2H12NY N-channel SiC power MOSFET Outline VDSS 1700V TO-268-2L RDS(on) (Typ.) 1.15 ID 4A PD 44W Features Inner circuit 1) Low on-resistance

DatasheetSCT2H12NY N-channel SiC power MOSFET

Outline

VDSS 1700V TO-268-2L

RDS(on) (Typ.) 1.15ID 4A

PD 44W

Features Inner circuit

1) Low on-resistance

2) Fast switching speed

3) Long creepage distance with no center lead

4) Simple to drive

5) Pb-free lead plating ; RoHS compliant

Packaging specifications

Type

Packing Embossed tape

Application Reel size (mm) 330

・Auxilialy power supplies Tape width (mm) 24

・Switch mode power supplies Basic ordering unit (pcs) 400

Unit

Taping code TB

Marking SCT2H12NY

Absolute maximum ratings (Ta = 25°C)

Parameter Symbol Value

Drain - Source voltage VDSS 1700 V

Continuous drain currentTc = 25°C ID

*1 4 A

Tc = 100°C ID *1 2.9 A

Pulsed drain current ID,pulse *2 10 A

Gate - Source voltage (DC) VGSS 6 to 22 V

Range of storage temperature Tstg 55 to 175 °C

Junction temperature Tj 175 °C

Power dissipation (Tc = 25°C) PD 44 W

Gate - Source surge voltage (tsurge<300nsec) VGSS_surge *3 10 to 26 V

(1) Gate(2) Drain(3) Source

*1 Body Diode

(1)

(3)

(2)

*1

(2)

(1) (3)

1/12 2017.07 - Rev.Bwww.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2H12NY

*1 Limited only by maximum temperature allowed.*2 PW 10s, Duty cycle 1%

*3 Example of acceptable Vgs waveform

*4 Pulsed

Thermal resistance

Parameter SymbolValues

UnitMin. Typ. Max.

UnitMin. Typ. Max.

Thermal resistance, junction - case RthJC - 2.65 3.45 °C/W

Electrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

V

Zero gate voltagedrain current

IDSS

VDS = 1700V, VGS = 0V

ATj = 25°C -

Drain - Source breakdownvoltage

V(BR)DSS VGS = 0V, ID = 1mA 1700 - -

0.1 10

Tj = 150°C - 0.2 -

Gate - Source leakage current IGSS VGS = 22V, VDS = 0V - - 100 nA

nA

Gate threshold voltage VGS (th) VDS = VGS, ID = 0.41mA 1.6 2.8 4.0 V

Gate - Source leakage current IGSS VGS = 6V, VDS = 0V - - 100

2/12 2017.07 - Rev.B

www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2H12NY

Electrical characteristics (Ta = 25°C)


Tj = 25°C - 1.15 1.5

Tj = 125°C - 1.71 -

UnitMin. Typ. Max.

Static drain - sourceon - state resistance

RDS(on) *4

VGS = 18V, ID = 1.1A

Transconductance gfs *4 VDS = 10V, ID = 1.1A - 0.4 - S

Gate input resistance RG f = 1MHz, open drain - 64 -

pFOutput capacitance Coss VDS = 800V - 16 -

Reverse transfer capacitance Crss f = 1MHz

Input capacitance Ciss VGS = 0V - 184 -

- 6 -

Effective output capacitance,energy related

Co(er)VGS = 0VVDS = 0V to 800V

- 17 - pF

Turn - on delay time td(on) *4 VDD = 500V, ID = 1.1A - 16 -

nsRise time tr

*4

Fall time tf *4 RG = 0 - 74 -

VGS = 18V/0V - 21 -

Turn - off delay time td(off) *4 RL = 455 - 35 -

µJ

Turn - off switching loss Eoff *4 - 32 -

Turn - on switching loss Eon *4 VDD = 800V, ID=1.1A

VGS = 18V/0V

RG = 0, L=2mH*Eon includes diode reverse recovery

- 57 -

- 14 -

Gate Charge characteristics (Ta = 25C)


UnitMin. Typ. Max.

V

- 5 -

Gate plateau voltage V(plateau) VDD = 500V, ID = 1A - 10.5 -

nCGate - Source charge Qgs *4 ID = 1A - 4 -

Gate - Drain charge Qgd *4 VGS = 18V

Total gate charge Qg *4 VDD = 500V

3/12 2017.07 - Rev.B


DatasheetSCT2H12NY

Body diode electrical characteristics (Source-Drain) (Ta = 25°C)


UnitMin. Typ. Max.

A

Inverse diode direct current,pulsed

ISM *2 - - 10 A

Inverse diode continuous,forward current

IS *1

Tc = 25°C

- - 4

V

Reverse recovery time trr *4

IF = 1.1A, VR = 800V

di/dt = 300A/s

- 21 - ns

Reverse recovery charge Qrr *4

Forward voltage VSD *4 VGS = 0V, IS = 1.1A - 4.3 -

- 13 - nC

Peak reverse recovery current Irrm *4 - 1.1 - A

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

Ws/KRth2 1601m Cth2 1.42m

Rth3 556m Cth3 65.6m

Rth1 493m

K/W

Cth1 378µ

4/12 2017.07 - Rev.B


DatasheetSCT2H12NY

Electrical characteristic curves

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

Pow

er D

issi

patio

n :

PD

[W]

Dra

in C

urre

nt :

ID

[A]

Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal Resistance vs. Pulse Width

Tra

nsie

nt T

herm

al R

esis

tanc

e : R

th[K

/W]

Pulse Width : PW [s]

0

5

10

15

20

25

30

35

40

45

50

0 50 100 150 200

0.1

1

10

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Ta = 25ºCSingle Pulse

0.01

0.1

1

10

100

0.1 1 10 100 1000 10000

Ta = 25ºCSingle Pulse

PW = 100s

PW = 1ms

PW = 10ms

PW = 100ms

Operation in this areais limited by RDS(on)

5/12 2017.07 - Rev.B


DatasheetSCT2H12NY


Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

Fig.6 Tj = 150°C Typical Output

Characteristics(I)Fig.7 Tj = 150°C Typical Output

Characteristics(II)

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Dra

in C

urre

nt :

ID

[A]

Dra

in C

urre

nt :

ID

[A]

Dra

in C

urre

nt :

ID

[A]

Drain - Source Voltage : VDS [V]

Dra

in C

urre

nt :

ID

[A]


0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

0 1 2 3 4 5

Ta = 25ºCPulsed

VGS= 8V

VGS= 14V

VGS= 16V

VGS= 18V

VGS= 20V

VGS= 12V

VGS= 10V

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

0 1 2 3 4 5

Ta = 150ºCPulsed

VGS= 8V

VGS= 18V

VGS= 16VVGS= 14V

VGS= 12V

VGS= 20V

VGS= 10V

0

0.5

1

1.5

2

2.5

3

3.5

0 2 4 6 8 10

Ta = 25ºCPulsed

VGS= 8V

VGS= 10V

VGS= 14V

VGS= 16VVGS= 20V

VGS= 12V

VGS= 18V

0

0.5

1

1.5

2

2.5

3

3.5

0 2 4 6 8 10

Ta = 150ºCPulsed

VGS = 10V

VGS= 8V

VGS= 18V

VGS= 16V

VGS= 20V

VGS= 14V

VGS= 12V

6/12 2017.07 - Rev.B


DatasheetSCT2H12NY


Fig.9 Typical Transfer Characteristics (II)Fig.8 Typical Transfer Characteristics (I)

Dra

in C

urre

nt :

ID

[A]

Dra

in C

urre

nt :

ID

[A]

Fig.10 Gate Threshold Voltagevs. Junction Temperature

Gat

e T

hres

hold

Vol

tage

: V

GS

(th)

[V]

Junction Temperature : Tj [°C]

Fig.11 Transconductance vs. Drain Current

Tra

nsco

nduc

tanc

e : g

fs[S

]

Drain Current : ID [A]

Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]

0.01

0.1

1

0.01 0.1 1 10

VDS = 10VPulsed

Ta= 175ºCTa= 125ºCTa= 75ºCTa= 25ºCTa= 25ºC

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

-50 0 50 100 150 200

VDS = 10VID = 0.41mA

0.01

0.1

1

10

0 2 4 6 8 10 12 14 16 18 20

VDS = 10VPulsed


0

0.5

1

1.5

2

2.5

3

0 2 4 6 8 10 12 14 16 18 20

VDS = 10VPulsed


7/12 2017.07 - Rev.B


DatasheetSCT2H12NY


Fig.12 Static Drain - Source On - StateResistance vs. Gate Source Voltage

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[

]

Gate - Source Voltage : VGS [V]

Fig.13 Static Drain - Source On - StateResistance vs. Junction Temperature

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[

]

Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - StateResistance vs. Drain Current

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[

]


0

0.5

1

1.5

2

2.5

3

8 10 12 14 16 18 20 22

ID = 1.1A

ID = 2.2A

Ta = 25ºCPulsed

0

0.5

1

1.5

2

2.5

3

-50 0 50 100 150 200

VGS = 18VPulsed

ID = 2.2A

ID = 1.1A

0.1

1

10

0.1 1 10

VGS = 18VPulsed

Ta = 175ºCTa = 125ºCTa = 75ºCTa = 25ºCTa = 25ºC

8/12 2017.07 - Rev.B


DatasheetSCT2H12NY


Fig.15 Typical Capacitancevs. Drain - Source Voltage

Cap

acita

nce

: C

[pF

]


Fig.17 Switching Characteristics

Sw

itchi

ng T

ime

: t [

ns]


Fig.18 Dynamic Input Characteristics

Total Gate Charge : Qg [nC]

Gat

e -

Sou

rce

Vol

tage

: V

GS

[V]

Cos

s S

tore

d E

nerg

y : E

OS

S[

J]

Fig.16 Coss Stored Energy


0

1

2

3

4

5

6

7

0 200 400 600 800 1000

Ta = 25ºC

1

10

100

1000

0.1 1 10 100 1000

Ciss

Coss

Crss

Ta = 25ºCf = 1MHzVGS = 0V

0

2

4

6

8

10

12

14

16

18

20

0 2 4 6 8 10 12 14 16

Ta = 25ºCVDD = 500VID = 1APulsed

10

100

1000

0.1 1 10

tf

td(on)

td(off)

Ta = 25ºCVDD = 500VVGS = 18VRG = 0Pulsed

tr

9/12 2017.07 - Rev.B


DatasheetSCT2H12NY


Fig.19 Typical Switching Lossvs. Drain - Source Voltage

Sw

itchi

ng E

nerg

y : E

[J

]


Fig.21 Typical Switching Lossvs. External Gate Resistance

Sw

itchi

ng E

nerg

y : E

[J

]

External Gate Resistance : RG []

Sw

itchi

ng E

nerg

y : E

[J

]

Fig.20 Typical Switching Lossvs. Drain Current


0

50

100

150

200

250

0 1 2 3 4 5

Ta = 25ºCVDD=800VVGS = 18V/0VRG=0L=2mH

Eon

Eoff

0

10

20

30

40

50

60

70

80

90

100

500 600 700 800 900 1000 1100

Ta = 25ºCID=1.1AVGS = 18V/0VRG=0L=2mH

Eon

Eoff

0

20

40

60

80

100

120

140

0 20 40 60 80 100

Ta = 25ºCVDD=800VID=1.1AVGS = 18V/0VL=2mH

Eon

Eoff

10/12 2017.07 - Rev.B


DatasheetSCT2H12NY


Fig.22 Inverse Diode Forward Currentvs. Source - Drain Voltage

Inve

rse

Dio

de

For

war

d C

urre

nt :

IS

[A]

Source - Drain Voltage : VSD [V]

Fig.23 Reverse Recovery Timevs.Inverse Diode Forward Current

Rev

erse

Rec

over

y T

ime

: trr

[ns]

Inverse Diode Forward Current : IS [A]

0.01

0.1

1

10

0 1 2 3 4 5 6 7 8

VGS = 0VPulsed

Ta = 175ºCTa = 125ºCTa = 75ºCTa = 25ºCTa = 25ºC

10

100

1000

1 10

Ta = 25ºCdi / dt = 300A / sVR = 800VVGS = 0VPulsed

11/12 2017.07 - Rev.B


DatasheetSCT2H12NY

Measurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

90%

90% 90%

10% 10%

50%10%50%

VGS

Pulse width

VDS

ton toff

trtd(on) tftd(off)

VGS

RG

VDS

D.U.T.

ID

RL

VDD

VGS

IG(Const.)

VDS

D.U.T.

ID

RL

VDD

VG

VGS

Charge

Qg

Qgs Qgd

VsurgeIrr

Eon = ID×VDS Eoff = ID×VDS

ID

VDS

DRIVER MOSFET

RG

D.U.T. LIF

VDD

Same type device as D.U.T.

D.U.T.

ID

trr

Irr 100%

Irr

IF

0

Irr 90%

drr / dt

Irr 10%DRIVER MOSFET

RG

D.U.T. LIF

VDD

D.U.T.

12/12 2017.07 - Rev.B


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Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

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DatasheetDatasheet

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Documents

SCT2H12NY : SiC Power DevicesDatasheet SCT2H12NY N-channel SiC power MOSFET Outline VDSS 1700V TO-268-2L RDS(on) (Typ.) 1.15 ID 4A PD 44W Features Inner circuit 1) Low on-resistance