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ASTRaL Research Group at Lappeenranta University of Technology

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Presentation of thin film ALD research done in ASTRaL laboratory at Lappeenranta University of Technology's campus in Mikkeli, Finland

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Page 1: ASTRaL Research Group at Lappeenranta University of Technology
Page 2: ASTRaL Research Group at Lappeenranta University of Technology

ASTRAL

• Advanced Surface Technology Reseach Group

• A material science research group at Lappeenranta University of

Technology

• Located in Mikkeli, Finland

Page 3: ASTRaL Research Group at Lappeenranta University of Technology

Main research areas

Thin film deposition techniques and

applications, particularly for nanoscale

structures:

Atomic Layer Deposition (ALD)

• Conformality

• Uniformity

• Thickness control

• Hermeticity

• Ability to form nanolaminates

Page 4: ASTRaL Research Group at Lappeenranta University of Technology

ALD – Atomic Layer Deposition

Atomically precise control of material layer

thickness, composition and structure

Page 5: ASTRaL Research Group at Lappeenranta University of Technology

ALD – Atomic Layer Deposition

Chemical vapor deposition method with sequential self-limiting gas-

solids reactions

First atomic layer onto substrate is formed by chemisorption (in ideal

case), second layer with chemical reaction

Materials are built up one atomic layer at a time (cycle)

(In practice, due to the size of the molecules (steric hindrance), less

than 1 mono layer may be formed at a time)

Page 6: ASTRaL Research Group at Lappeenranta University of Technology

Schematic of ALD Reactor

Page 7: ASTRaL Research Group at Lappeenranta University of Technology

Al2O3 ALD – Model ALD system

Chemisorption of the first precursor onto the substrate

Substrate

O

H

O O

H

O O

H

Al

H

C H

H

H

C H

H Al

H

C H

H

H

C H

H

H

C H

H H

H

C H

H H

reaction products CH4

(A) AlOH * + Al(CH3)3 AlOAl(CH3)2* + CH4

Page 8: ASTRaL Research Group at Lappeenranta University of Technology

Al2O3 ALD – Model ALD system

Inert gas purge to remove the excess of reaction products and unreacted

precursor

Substrate

O

Al

H

C H

H

H

C H

H

O

Al

H

C H

H

H

C H

H

H

C H

H H

H

C H

H H

Excess TMA

Passivated surface

O

Al

H

C H

H

H

C H

H

O

Al

H

C H

H

H

C H

H

O

Al

H

C H

H

H

C H

H

Al

H

C H

H

H

C H

H

H C

H

H

reaction products CH4

Purge after TMA pulse

(A) AlOH * + Al(CH3)3 AlOAl(CH3)2* + CH4

Page 9: ASTRaL Research Group at Lappeenranta University of Technology

Al2O3 ALD – Model ALD system

Introduction of the second precursor

H2O pulse

Substrate

O

Al

H

C H

H

H

C H

H

O

Al

H

C H

H

H

C H

H

O

Al

H

C H

H

H

C H

H

O

Al

H

C H

H

H

C H

H

O

Al

H

C H

H

H

C H

H

O

H H

(B) AlCH3 * + H20 Al2OH * + CH4

Page 10: ASTRaL Research Group at Lappeenranta University of Technology

Al2O3 ALD – Model ALD system

Surface reactions to produce desired film material

Substrate

O

Al

H

C H

H

H

C H

H

O

Al

H

H

C H

H

Al(CH3)3 + OH

O

Al

H

C H

H

H

C H

H

O

Al

O

Al

H

C H

H

H

C H

H

reation products CH4

O O

H

C H

H H

H

C H

H H

H

C H

H H

(B) AlCH3 * + H20 Al2OH * + CH4

Page 11: ASTRaL Research Group at Lappeenranta University of Technology

Al2O3 ALD – Model ALD system

Self limiting growth of the film through surface passivation

Substrate

One atomic layer of

passivated surface

reaction products CH4

O

Al

O

Al

H

O O

H

O O

O

Al

O

Al

H

O O

H

O O O

O

Al

H

O O

H

C H

H H

H

C H

H H

H

C H

H H

H

C H

H H

H

C H

H H

Purge after H2O pulse

H

C H

H H

(B) AlCH3 * + H20 Al2OH * + CH4

Page 12: ASTRaL Research Group at Lappeenranta University of Technology

Al2O3 ALD – Model ALD system

Process cycle repeated to reach required thickness

Substrate

O

Al

O

Al

O O

O O

O

Al

O

Al

O O

O O O

O

Al

O O O

Al Al

O

Al Al

O O

Al

O O O O O O

O

Al Al

O

Al Al

O O

Al

O O O O O O

O

H H

Al Al

O

Al Al

O O

Al

O

H H

O

H

2 Al(CH3)3 + 3 H20 Al2O3 + 6 CH4

Growth rate for Al2O3

1Å/Cycle

Page 13: ASTRaL Research Group at Lappeenranta University of Technology

Batch system cycle

Precursor A

Precursor B

Purge

Purge

A

Purge

B

Purge

• Stationary substrate

• Sequential exposure

• Time sequenced gas pulses

Page 14: ASTRaL Research Group at Lappeenranta University of Technology

Batch ALD systems

Beneq TFS500 • Batch system • Includes plasma chamber

(plasma chamber configuration was an ASTRaL design)

ASM F120 Beneq TFS200 (plasma ALD)

Page 15: ASTRaL Research Group at Lappeenranta University of Technology

Spatial ALD

separate gas zones

A B purge

exhaust

purge purge

moving substrate

A purge B purge

Page 16: ASTRaL Research Group at Lappeenranta University of Technology

Spatial ALD

flexible substrate coating head

Beneq TFS200R

Page 17: ASTRaL Research Group at Lappeenranta University of Technology

Roll-to-roll ALD systems

Beneq WCS 500 roll-to-roll system

500 mm web

Page 18: ASTRaL Research Group at Lappeenranta University of Technology

ALD research in Mikkeli

Diffusion barrier layers on flexible substrates

• roll-to-roll ALD research

• water vapour and oxygen barriers

• paper-based packaging

• photovoltaic cells and organic light emitting diodes

Photocatalytic materials

• titanium dioxide, doped, structural investigations of crystal growth and activation

• water and air purification

Bioactive materials

• biocidal coatings

• antibacterial surfaces

• control of time profile of antibacterial release

• zinc oxide and zinc oxide-based nanolaminates

Page 19: ASTRaL Research Group at Lappeenranta University of Technology

ALD research in Mikkeli

Surface functionalisation

• hydrophilic and hydrophobic surfaces

Polymer layers

• molecular layer deposition of PET

Sensor materials

• tin oxide gas sensors

Optoelectronic materials

• zinc oxide

• copper chloride

Process development

Page 20: ASTRaL Research Group at Lappeenranta University of Technology

Summary

• Focus on atomic layer deposition

• Process, materials and applications research

• Unique facility for roll-to-roll ALD

• Open for collaboration

www.astral.fi

Page 21: ASTRaL Research Group at Lappeenranta University of Technology

Contact Details

Project Coordinator

JANNE KEKÄLÄINEN

[email protected]

GSM +358 50 344 9494

http://www.linkedin.com/in/jannekekalainen

http://twitter.com/JanneKekalainen

_____________________________________

LAPPEENRANTA UNIVERSITY OF TECHNOLOGY

ASTRaL - Advanced Surface Technology Research Laboratory

Sammonkatu 12, FI-50130 Mikkeli, Finland

http://www.astral.fi/