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SUBMITTED BY: NAVEEN TOKAS

Leakage power optimization for ripple carry adder

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Page 1: Leakage power optimization for ripple carry adder

SUBMITTED BY:

NAVEEN TOKAS

Page 2: Leakage power optimization for ripple carry adder

Day by day IC technology is getting advanced in

terms of style, proportions and its performance

exploration. A fast way with reduced leakage

power and smaller planetary is implied to the

latest electronic style.

Addition is normally used mathematical process in

silicon chip, DSP etc. It can be used as a basic

block for synthesis of all arithmetic setups. The

binary adder structure becomes an badly

essential hardware unit. In any book on pc

arithmetic, we will detect that there happens an

large variety of rather completely different circuit

designs relating different performance features.

Whereas adders are made for lots of numerical

expressions like BCD or excess-3 code.

Page 3: Leakage power optimization for ripple carry adder

Ripple carry adder comprises of cascaded full

adders. It is designed by cascading full adder

blocks non-parallel with each other. The output

carry of 1 stage works as input carry for second

stage and so on.

In other words we can say full adder is basic

building block of ripple carry adder. In this work

we will construct full adder using 3T based logic

gates.

The design of a ripple-carry adder is simple,

which permits for fast design time; however, the

ripple-carry adder is relatively slow, since each full

adder need to wait for the carry bit to be

calculated from the previous full adder as

discussed above.

Page 5: Leakage power optimization for ripple carry adder

Ever since its initiation, the design of full adder

has been experiencing a significant improvement,

which includes three basic design goals for eg.

minimizing the transistor count, reducing the

power consumption and increasing the speed.

A custom transistor level can be used to

implement full adder circuit or implantation via

composed of other gates. We can understand it

by given equations :

SUM =A B CIN and COUT =

(A*B)+[CIN*(A+B)] .

Page 6: Leakage power optimization for ripple carry adder

The 3 transistors based logic gates design is

based on PMOS and NMOS Pass Transistor

Logic (PTL). The 3T universal gates (NAND and

NOR) design is based on CMOS inverter and

PTL. Output voltage deterioration occurs

across the PMOS and NMOS because of

threshold voltage drop while passing the logic 0

or logic 1 respectively in relation to the input. The

voltage deterioration caused by threshold drop

can be extensively minimized by increasing the

W/L ratio of the pass transistor.

Page 7: Leakage power optimization for ripple carry adder

XOR gates form the major building block of full

adders. Improving the performance of the XOR

gates can significantly enhance the performance

of the adder. A survey of collected works discloses

a wide range of different types of XOR gates that

have been recognized over the years. The

previous designs of XOR gates were designed by

either eight transistors or six transistors that are

usually used in most designs.

In this work we are going to use XOR gate with 3T

which can reduce its power consumption,

increase its operating speed and reduce its size.

Page 8: Leakage power optimization for ripple carry adder

In previous research we were using GDItechniques, feed through logic. Now I’m going toimplement ripple carry adder using full adderwhich is based on 3T xor gate. By adopting thismethod we can reduce area, complexity, andpower consumption, delay and cost of the device.Because these are most important parameters indesigning a device, for a designer in today’s era.

Mentor Graphics Corporation today announced anew version of the transistor-level analogsimulator that offers improved raw speedperformance without compromising accuracy. Thespeed up targets very large post-layoutsimulations that are mandatory at 45nmprocesses and below to thoroughly verify acomplex design.

Page 9: Leakage power optimization for ripple carry adder

As discussed above I am going to use 3 transistor

based XOR gate to implement full adder. Full

adder is basic building block of ripple carry adder

so primarily it is necessary to reduce power

dissipation of full adder(FA) for low power ripple

carry adder.

As we know XOR gate is an essential part of full

adder so we can say that to decrease power

dissipation of FA it is essential to use low power

consuming XOR gate and other elements to

make full adder.

So I have made a 3 transistor based XOR gate on

mentor graphics software at 35nm technology. On

simulating it I have found total power dissipation

of 0.000watts i.e. there is no power dissipation

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