COLLEGE OF ENGINEERING

ROORKEE

Control Systems and Instrumentation

At

Samsung Electronic-Ghaziabad

SUBMITTED FOR PARTIAL FULFILLMENT OF B.TECH IN:

ELECTRONICS AND TELECOMMUNICATION

ENGINEERING

INDUSTRIAL INTERACTION LAB (PEC-752)

SUBMITTED TO: SUBMITTED BY:

Ms. ASHITA VERMANI SAGAR KHARAB

ASSISTANT PROFESSOR ET-K (IVth YEAR)

DEPARTMENT OF ELECTRONICS AND TELECOM. CLASS ROLL NO. - 16

COLLEGE OF ENGINEERING ROORKEE UNIV. R.NO. -110060102087

CONTENTS

Certificate

Chapter 1: About Samsung Electronics

Introduction

Operations

Products

Mission of Company

Chapter 2: Instrumentations and Control System Products

Architecture Products

Application Processors

Chapter 3: Introduction to Exynos

History

Semiconductor Technology

14 nm Technology

Instruction Set

Microarchitecture

Relation to instruction set architecture

Chapter IV: Exynos Family

Chapter V: Exynos 5

Introduction

Exynos 5 Octa (Exynos 5422) Internal Architecture

HKMG Transistor

big.LITTLE Processing

Chapter IX: Applications

Navigation Devices

Smart Phone

Graphical performance without compromising power consumption

Low Power Multitasking

WQXGA Display in Mobile device

Incredible experience for 3D gaming

References

Chapter I

About Samsung Electronics

Introduction:

Samsung Electronics Co., Ltd. is a South Korean multinational electronics company

headquartered in Suwon, South Korea. It is the flagship subsidiary of the Samsung Group,

amounting to 70% of the group's revenue in 2012, and has been the world's largest

information technology company by revenues since 2009. Samsung Electronics has assembly

plants and sales networks in 80 countries and employs around 370,000 people. Since 2012,

the CEO is Kwon Oh-Hyun. Samsung has long been a major manufacturer of electronic

components such as lithium-ion batteries, semiconductors, chips, flash memory and hard

drive devices for clients such as Apple, Sony, HTC and Nokia.

In recent years, the company has diversified into consumer electronics. It is the world's

largest manufacturer of mobile phones and smartphones fuelled by the popularity of

its Samsung Galaxy line of devices.[11] The company is also a major vendor of tablet

computers, particularly its Android-powered Samsung Galaxy Tab collection, and is

generally regarded as pioneering the phablet market through the Samsung Galaxy

Note family of devices.

Samsung has been the world's largest manufacturer of LCD panels since 2002, the world's

largest television manufacturer since 2006, and world's largest manufacturer of mobile

phones since 2011. Samsung Electronics displaced Apple Inc. as the world's largest

technology company in 2011 and is a major part of the South Korean economy. In June 2014

Samsung published the Tizen OS with the new Samsung Z.

Operations:

The company focuses on four areas: digital media, semiconductor, telecommunication network,

and LCD digital appliances.

The digital-media business area covers computer devices such as laptop computers and laser

printers; digital displays such as televisions and computer monitors; and consumer

entertainment devices such as DVD players, MP3 players and digital camcorders; and home

appliances such as refrigerators, air conditioners, air purifiers, washers, microwave ovens,

and vacuum cleaners.

The semiconductor-business area includes semiconductor chips such as SDRAM,SRAM,

NAND flash memory ; smart cards ; mobile application processors ; mobile TV receivers;

RF transceivers; CMOS Image sensors, Smart Card IC, MP3 IC, DVD/Blu-ray Disc/HD

DVD Player SOC and multi-chip package (MCP); and storage devices such as optical disc

drives and formerly hard disk drives.

The telecommunication-network-business area includes multi–service DSLAMs and fax

machines; cellular devices such as mobile phones, PDA phones, and hybrid devices called

mobile intelligent terminals (MITs); and satellite receivers.

The LCD business area focuses on producing TFT-LCD and organic light-emitting diode (OLED)

panels for laptops, desktop monitors, and televisions.

Samsung Print was established in 2009 as a separate entity to focus on B2B sales and has

released a broad range of multifunctional devices and printers and more.

Products:

LCD and LED panels.

While reducing the thickness substantially, the company maintained the performance of

previous models, including full HD resolution, 120 Hz refresh rate, and 5000:1 contrast ratio.

On September 6, 2013, Samsung launched its 55-inch curved OLED TV (model KE55S9C)

in the United Kingdom with John Lewis.

In early October 2013, the Samsung Corporation disseminated a press release for its curved

display technology with the Galaxy Round smartphone model. The press release described

the product as the "world’s first commercialized full HD Super AMOLED flexible display."

The manufacturer explains that users can check information such as time and battery life

when the home screen is off, and can receive information from the screen by tilting the

device.

Mobile Phones

At the end of the third quarter of 2010, the company had surpassed the 70 million unit mark

in shipped phones, giving it a global market share of 22 percent, trailing Nokia by 12

percent. Overall, the company sold 280 million mobile phones in 2010, corresponding to a

market share of 20.2 percent. Partially owing to strong sales of the Samsung Galaxy range of

smartphones, the company overtook Apple in worldwide smartphone sales during the third

quarter 2011, with a total market share of 23.8 percent, compared to Apple's 14.6-percent

share.[73] Samsung became the world's largest cell phone maker in 2012, with the sales of 95

million smart phones in the first quarter.

During the third quarter of 2013, Samsung's smartphone sales were boosted by a strong

consumer reception in emerging markets such as India and the Middle East, where lower-

priced handsets were popular. As of October 2013, the company offers 40 smartphone

models on its US website.

The smartphone market share of Samsung decreased to 24 percent in Q3 2014 from 29

percent in Q2 2014 and 32.9 percent in Q3 2013

Semiconductors

A Samsung DDR-SDRAM

Samsung Electronics has been the world's-largest memory chip maker since 1993. In 2009 it

started mass-producing 30 nm-class NAND flash memories. It succeeded in 2010 in mass-

producing 30 nm-class DRAMs and 20 nm-class NAND flashes, both of which were the first

time in the world.

Other

Samsung produces printers for both consumers and business use, including mono-laser

printers, color laser printers, multifunction printers, and enterprise-use high-speed digital

multifunction printer models.

In 2010, the company introduced a number of energy efficient products, including the laptop

R580, netbook N210, the world's-smallest mono-laser printer ML-1660, and color laser

multifunction printer CLX-3185.

The Samsung GX-10 digital SLR camera

Samsung has introduced several models of digital cameras and camcorders including the

WB550 camera, the ST550 dual-LCD-mounted camera, and the HMX-H106 (64GB SSD-

mounted full HD camcorder). In 2009, the company took the third place in the compact

camera segment. Since then, the company has focused more on higher-priced items. In 2010,

the company launched the NX10, the next-generation interchangeable lens camera.

Mission of Company:

Everything we do at Samsung is guided by our mission: to be the best “digital E-Company”.

It is our Quality Policy that we deliver on the basis of an effective quality system the best

products and services that exceed our customers’ requirements and expectations.

All executives and employees of SAMSUNG are making continuous efforts to achieve the

very best quality in all our products and services.

We obtained ISO/TS16949, the international standard for automotive industry, in 2004. We

also achieved TL9000, the international standard for Telecommunication industry, in Oct.

2001. In addition, we are continuously upgrading the quality management system in all stages

ranging from order receipt, development, production to shipment.

Samsung is guided by a singular vision: to lead the digital convergence movement.

Samsung believe that through technology innovation today, we will find the solutions we

need to address the challenges of tomorrow.

From technology comes opportunity—for businesses to grow, for citizens in emerging

markets to prosper by tapping into the digital economy, and for people to invent new

possibilities.

It’s our aim to develop innovative technologies and efficient processes that create new

markets, enrich people’s lives and continue to make Samsung a trusted market leader.

Chapter 2

Instrumentations and Control System Products

• Architecture Products

• CMOS Image Sensors: An image sensor is a device that converts an optical

image into an electronic signal. It is used mostly in digital cameras, camera

modules and other imaging devices. Early analog sensors were video camera

tubes; currently used types are semiconductor charge-coupled devices (CCD)

or active pixel sensors in complementary metal–oxide–semiconductor

(CMOS) or N-type metal-oxide-semiconductor (NMOS, Live MOS)

technologies.

• Mobile Memory Solutions: mobile memory enables outstanding design

flexibility. Our Mobile DRAM solutions help designers create sleek devices

with heightened functionality. And, our innovative "chip-stack" MCP

solutions optimize board space by combining different memory technologies

on a single substrate.

• DRAM: High-speed, power-saving memory for the next generation of mobile

devices. Find out why leading manufacturers utilize SAMSUNG Mobile

DRAM for eBooks, tablet computers, smart phones, MP3s, and PDAs. Deliver

the features you need to confidently meet market demand for handheld devices

with high-performance memory built specifically for the leading edge of

mobile device and application design.

• Application Processors:

Deliver outstanding user experiences for today's ultra-small mobile devices,

tablets, notebooks, and smartphones with high-performance, low-power Samsung

application processors (APs). Minimize the overall size of your mobile device by

using the latest system-on-a-chip (SoC) technology. We can integrate a variety of

systems including CPUs, graphic accelerators, image signal processors, and storage

interfaces. Samsung's flagship SoC product line, Exynos, comprises an exceptional set

of APs based on highly advanced mobile technologies, including Samsung's High-K

Metal Gate (HKMG) low-power process. The broad range of the Exynos line offers

mobile device architects the solutions they need to meet exacting design requirements.

Chapter 3

Introduction to Exynos

Exynos is a series of ARM-based System-on-Chips (SoCs) developed and manufactured

by Samsung Electronics and is a continuation of SAMSUNG's earlier S3C, S5L and S5P line

of SoCs.

History:

In 2010 Samsung launched the S5PC110 (now Exynos 3 single) in its Samsung Galaxy

S mobile phone, which featured a licensed ARM Cortex-A8 CPU.

In early 2011, Samsung first launched the Exynos 4210 SoC in its Samsung Galaxy S

II mobile smartphone. The driver code for the Exynos 4210 was made available in the Linux

kernel and support was added in version 3.2 in November 2011.

On 29 September 2011, Samsung introduced Exynos 4212[5] as a successor to the 4210; it

features a higher clock frequency and "50 percent higher 3D graphics performance over the

previous processor generation". Built with a 32 nm High-K Metal Gate (HKMG) low-power

process; it promises a "30 percent lower power-level over the previous process generation."

On 30 November 2011, Samsung released information about their upcoming SoC with

a dual-core ARM Cortex-A15 CPU, which was initially named "Exynos 5250" and was later

renamed to Exynos 5 Dual. This SoC has a memory interface providing 12.8 GB/sec of

memory bandwidth, support for USB 3.0 and SATA 3, can decode full 1080p video at

60fps along with simultaneously displaying WQXGA-resolution (2560x1600) on a mobile

display as well as 1080p over HDMI.

On 26 April 2012, Samsung released the Exynos 4 Quad, which powers the Samsung Galaxy

S III and Samsung Galaxy Note II. The Exynos 4 Quad SoC uses 20% less power than the

SoC in Samsung Galaxy SII. Samsung also changed the name of several SoCs, Exynos 3110

to Exynos 3 Single, Exynos 4210 and 4212 to Exynos 4 Dual 45 nm, and Exynos 4 Dual

32 nm and Exynos 5250 to Exynos 5 Dual.

Semiconductor Technology:

Semiconductor device fabrication is the process used to create the integrated

circuits that are present in everyday electrical and electronic devices. It is a multiple-step

sequence of photo lithographic and chemical processing steps during

which ELECTRONIC circuits are gradually created on a wafer made of

pure semiconducting material. Silicon is almost always used, but various compound

semiconductors are used for specialized applications. The entire manufacturing process, from

start to packaged chips ready for shipment, takes six to eight weeks and is performed in

highly specialized facilities referred to as fabs.

Various Semiconductor Technologies: Semiconductor is generally discriminated on the

basis of the width of the semiconductor wafer. Lesser the width, better the technology.

Name of Technology Year of Introduction

10 µm 1971

6 µm 1974

3 µm 1977

1.5 µm 1982

1 µm 1985

800 nm 1989

600 nm 1994

350 nm 1995

250 nm 1997

180 nm 1999

130 nm 2001

90 nm 2004

65 nm 2006

45 nm 2008

32 nm 2010

22 nm 2012

14 nm 2014

10 nm 2016

7 nm 2018

5 nm 2020

14 nm Technology:

The 14 nanometer (14 nm) semiconductor device fabrication node is the technology

node following the 22 nm/ (20 nm) node. The naming of this technology node as "14 nm"

came from the International Technology Roadmap for Semiconductors (ITRS). The 14 nm

technology was reached by semiconductor companies in 2014.

14 nm resolution is difficult to achieve in a polymeric resist, even with electron beam

lithography. In addition, the chemical effects of ionizing radiation also limit reliable

resolution to about 30 nm, which is also achievable using current state-of-the-art immersion

lithography. Hardmask materials and multiple patterning are required.

A more significant limitation comes from plasma damage to low-k materials. The extent of

damage is typically 20 nm thick, but can also go up to about 100 nm. The damage sensitivity

is expected to get worse as the low-k materials become more porous.

For comparison, the lattice constant, or distance between surface atoms, of unstrained silicon

is 543 pm (0.543 nm). Thus fewer than thirty atoms would span the channel length, leading to

substantial leakage.

Tela Innovations and Sequoia Design Systems have developed a methodology allowing

double exposure for the 14 nm node.

SAMSUNG and Synopsys have also begun implementing double patterning in 22 nm and

16 nm design flows.

Mentor Graphics reported taping out 16 nm test chips in 2010.

On January 17, 2011, IBM announced that they are teaming up with ARM to develop 14 nm

chip processing technology.

On February 18, 2011, Intel announced that it would construct a new $5

billion semiconductor fabrication plant in Arizona, designed to manufacture chips using the

14 nm manufacturing processes and leading-edge 300 mm wafers. The new fabrication plant

was to be named Fab 42, and construction was meant to start in the middle of 2011. Intel

billed the new facility as "the most advanced, high-volume manufacturing facility in the

world," and said it would come on line in 2013. Intel has since decided to postpone opening

this facility and instead upgrade its existing facilities to support 14-nm chips.

On May 17, 2011, Intel announced a roadmap for 2014 that includes 14 nm transistors for

their Xeon, Core, and Atom product lines.

Instruction Set:

An instruction set, or instruction set architecture (ISA), is the part of the computer

architecture related to programming, including the native data types, instructions, registers,

addressing modes, memory architecture, interrupt and exception handling, and external I/O.

An ISA includes a specification of the set of opcodes (machine language), and the native

commands implemented by a particular processor.

Generally we use ARM Architecture. ARM architecture forms the basis for every ARM

processor. Over time, the ARM architecture has evolved to include architectural features to

meet the growing demand for new functionality, high performance and the needs of new and

emerging MARKETS. There are currently two ARMv8 profiles, the ARMv8-A

architecture profile for high performance MARKETS such as mobile and enterprise, and

the ARMv8-R architecture profile for embedded applications in automotive and industrial

control.

The ARM architecture supports implementations across a wide range of performance points,

establishing it as the leading architecture in many MARKET segments. The ARM

architecture supports a very broad range of performance points leading to very small

implementations of ARM processors, and very efficient implementations of advanced designs

using state of the art micro-architecture techniques. Implementation size, performance, and

low power consumption are key attributes of the ARM architecture.

ARM developed architecture extensions to provide support for Java acceleration (Jazelle®),

security (TrustZone®), SIMD, and Advanced SIMD (NEON™) technologies. The ARMv8-

architecture adds a Cryptographic extension as an optional feature.

The ARM architecture is similar to a Reduced Instruction Set Computer (RISC) architecture,

as it incorporates these typical RISC architecture features:

A uniform register file load/store architecture, where data processing operates only on

register contents, not directly on memory contents.

Simple addressing modes, with all load/store addresses determined from register contents and

instruction fields only.

Evolution of various architecture

Architecture used in the various Exynos processors are as following:

Architecture Bit

width

Cores designed by ARM

Holdings

Cores designed by third

parties

Cortex

profile

ARMv7-A 32

ARM Cortex-A5, ARM

Cortex-A7,ARM Cortex-

A8, ARM Cortex-A9,ARM

Cortex-A12, ARM

Cortex-A15,ARM Cortex-

A17

Krait, Scorpion, PJ4/Sheeva,

Apple A6/A6X Application

ARMv8-A 64/32 ARM Cortex-A53, ARM

Cortex-A57[29]

X-Gene, Nvidia Project

Denver, AMD K12,

Apple A7/A8, Cavium Thunder

X[30][31][32]

Application

Microarchitecture:

In electronics engineering and computer engineering, microarchitecture (even sometimes

abbreviated to µarch or uarch), also called computer organization, is the way a

given instruction set architecture (ISA) is implemented on a processor. A given ISA may be

implemented with different microarchitectures; implementations may vary due to different

goals of a given design or due to shifts in technology.

Computer architecture is the combination of microarchitecture and instruction set design.

Relation to instruction set architecture:

The ISA is roughly the same as the programming model of a processor as seen by

an assembly language programmer or compiler writer. The ISA includes the execution

model,processor registers, address and data formats among other things. The

microarchitecture includes the constituent parts of the processor and how these interconnect

and interoperate to implement the ISA.

Single bus organization microarchitecture

The microarchitecture of a machine is usually represented as (more or less detailed) diagrams

that describe the interconnections of the various microarchitectural elements of the machine,

which may be everything from single gates and registers, to complete arithmetic logic

units (ALUs) and even larger elements. These diagrams generally separate

the datapath (where data is placed) and the control path (which can be said to steer the data).

Chapter 4

Exynos Family

Samsung has done enormous work in the field of mobile application processors. List of all

Exynos Processors is as follows:

Exynos 3 Single

(previously S5PC110, Hummingbird, Exynos 3110)

Exynos 3 Quad(Exynos 3470)

Exynos 4 Dual 45 nm(Exynos 4210)

Exynos 4 Dual 32 nm(Exynos 4212)

Exynos 4 Quad (Exynos 4412 Prime)

Exynos 5 Dual (Exynos 5250)

Exynos 5 Octa (Exynos 5410)

Exynos 5 Octa (Exynos 5420)

Exynos 5 Octa (Exynos 5422)

Exynos 5 Octa (Exynos 5800)

Exynos 5 Hexa (Exynos 5260)

Exynos 5 Octa (Exynos 5430)

Exynos 7 Octa (Exynos 5433/7410)

Chapter 5

Exynos 5

Introduction:

Exynos 5 is the World’s first ARM Cortex-A15 processor. This processor was

introduced in the market by Samsung Electronics Co. Ltd. in late 2011.

Exynos 5 is available in various different variants which are as following:

Exynos 5 Octa (Exynos 5422):

This is one of the powerful and best processor of all of the Exynos 5 versions. Some

of the key features of this are as follows:

ARM Cortex-A15 Quad CPU (Eagle) with NEON as high performance processor

32 KB (Instruction)/32 KB (Data) Cache and 2 MB L2 Cache

ARM Cortex-A7 Quad CPU (Kingfisher) as power-efficient performance processor

32 KB (Instruction)/32 KB (Data) Cache and 512 KB L2 Cache

128-bit Multi-layer Network-on-Chip (NoC) architecture

Cache Coherent Interface (CCI) among Cortex-A15 and Cortex-A7, G2D, G3D and SSS

Memory Subsystem:

- 2-ports 32-bit up to 933 MHz LPDDR3/DDR3 Interfaces

- 2-ports 32-bit up to 533 MHz LPDDR2 Interfaces

Multi-format Video Hardware codec (MFC): 1920x1080@120fps (capable of decoding and encoding MPEG-

4/H.263/H.264/VP8 and decoding of MPEG-2/VC1 video) and upto 8192x8192 H.264 and VP8

encoding/decoding

3D and 2D graphics hardware, supporting a variety of APIs

OpenGL ES 1.1/2.0/3.0, OpenCL 1.1,OpenVG 1.0.1, DirectX 11, and Google Renderscript

Image Signal Processor: Supporting BayerRGB up to 14-bit input with 16MP 30 fps through MIPI CSI2

interfaces and special functionalities such as with Dynamic Range Compression (DRC), Face Detection (FD),

3D Noise Reduction filter (3DNR) and 3AA

JPEG Hardware Codec

LCD single display, supporting max WQXGA, 24 bpp RGB, YUV formats through MIPI DSI or eDP

Exynos 5 Dual (Exynos 5250)

Exynos 5 Octa (Exynos 5410)

Exynos 5 Octa (Exynos 5420)

Exynos 5 Octa (Exynos 5422)

Exynos 5 Octa (Exynos 5800)

Exynos 5 Hexa (Exynos 5260)

Exynos 5 Octa (Exynos 5430)

HDMI 1.4a interfaces with on-chip PHY

2-ports (4/4 lanes) MIPI CSI2 interfaces for both rear and front camera

1-port (4 lanes) eDisplayPort (eDP)

2-channel USB 3.0 Host or Device (with USB2.0 backward compatibility), supporting SS (5 Gbps) with on-chip

PHY

1-channel USB 2.0 Host, supporting LS/FS/HS (1.5 Mbps/12 Mbps/480 Mbps) with on-chip PHY

1-channel USB HSIC, supporting 480 Mbps with on-chip PHY

1-channel 8-bit eMMC 5.0

1-channel 8-bit SDIO 3.0

1-channel 4-bit SD 3.0

5-channel high-speed UART (up to 3 Mbps data rate for Bluetooth 2.1 EDR and IrDA 1.0 SIR)

3-channel SPI

1-channel PCM and 2-channel I2S audio interface, supporting 5.1 channel audio

1-channel S/PDIF interface support for digital audio (Tx only) 7-channel HS-I2C (up to 3.4 Mbps) for a variety

of sensors (such as ambient light sensor and proximity sensor) and PMIC

4-channel I2C interface support (up to 400 kbps) for HDMI, general-purpose multi-master and ISP

Security subsystem supporting hardware crypto accelerators, ARM TrustZone and TZASC

24-channel DMA Controller (8-channel MDMA, 8 x 2 channel PDMA)

Configurable GPIOs

Real time clock, PLLs, timer with PWM, MCT (Multi-Core Timer), and Watchdog timer.

Internal Architecture:

Fig 4.1 Internal Architecture of Exynos 5 Octa (Exynos 5422)

HKMG Transistor:

HKMG stands for High K Metal Gate and transistor is known to all. K is the dielectric

constant for various semiconductors. The term high-κ dielectric refers to a material with a

high dielectric constant κ (as compared to silicon dioxide). High-κ dielectrics are used in

semiconductor manufacturing processes where they are usually used to replace a silicon

dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ

gate dielectrics is one of several strategies developed to allow further miniaturization of

microelectronic components, colloquially referred to as extending Moore's Law.

Need for high κ materials:

Silicon dioxide has been used as a gate oxide material for decades. As

transistors have decreased in size, the thickness of the silicon dioxide gate dielectric

has steadily decreased to increase the gate capacitance and thereby drive current,

raising device performance. As the thickness scales below 2 nm, leakage currents due

to tunnelingincrease drastically, leading to high power consumption and reduced

device reliability. Replacing the silicon dioxide gate dielectric with a high-κ material

allows increased gate capacitance without the associated leakage effects.

First Principle:

The gate oxide in a MOSFET can be modeled as a parallel plate capacitor.

Ignoring quantum mechanical and depletion effects from the Si substrate and gate,

the capacitance Cof this parallel plate capacitor is given by

Where

A is the capacitor area

κ is the relative dielectric constant of the material (3.9 for silicon dioxide)

ε0 is the permittivity of free space

t is the thickness of the capacitor oxide insulator

Conventional silicon dioxide gate dielectric structure compared to a potential high-k dielectric structure

Cross-section of an N channel MOSFET transistor showing the gate oxide dielectric

Since leakage limitation constrains further reduction of t, an alternative

method to increase gate capacitance is alter κ by replacing silicon dioxide with a high-

κ material. In such a scenario, a thicker gate oxide layer might be used which can

reduce the leakage current flowing through the structure as well as improving the gate

dielectric reliability.

Use in Industry:

The industry has employed oxynitride gate dielectrics since the 1990s,

wherein a conventionally formed silicon oxide dielectric is infused with a small

amount of nitrogen. The nitride content subtly raises the dielectric constant and is

thought to offer other advantages, such as resistance against dopant diffusion through

the gate dielectric.

In early 2007, Intel announced the deployment of hafnium-based high-k

dielectrics in conjunction with a metallic gate for components built on 45

nanometer technologies, and has shipped it in the 2007 processor series

codenamed Penryn. At the same time, IBM announced plans to transition to high-k

materials, also hafnium-based, for some products in 2008. While not identified, the

most likely dielectric used in such applications are some form of nitrided hafnium

silicates (HfSiON). HfO2 and HfSiO are susceptible to crystallization during dopant

activation annealing. NEC ELECTRONICS has also announced the use of an HfSiON

dielectric in their 55 nm UltimateLowPower technology. However, even HfSiON is

susceptible to trap-related leakage currents, which tend to increase with stress over

device lifetime. This leakage effect becomes more severe as hafnium concentration

increases. There is no guarantee however, that hafnium will serve as a de facto basis

for future high-k dielectrics. The 2006 ITRS roadmap predicted the implementation of

high-k materials to be commonplace in the industry by 2010.

big.LITTLE Processing:

ARM big.LITTLE is a heterogeneous computing architecture developed by ARM

Holdings, coupling (relatively) slower, low-power processor cores with (relatively) more

powerful and power-hungry ones. The intention is to create a multi-core processor that can

adjust better to dynamic computing needs and use less power than clock scaling alone.

In October 2011, big.LITTLE was announced along with the Cortex-A7, which was designed

to be architecturally compatible with the Cortex-A15. In October 2012 ARM announced

the Cortex-A53 and Cortex-A57 (ARMv8-A) cores, which are also compatible with each

other to allow their use in a big.LITTLE chip. ARM later announced the Cortex-A12

at Computex 2013 followed by the Cortex-A17 in February 2014, both can also be paired in a

big.LITTLE configuration with the Cortex-A7

Implementation of big.Little:

SoC fab big cores LITTLE cores GPU Devices

HiSilicon K3V3 28 nm 1.8 GHz dual-coreCortex-A15 1.2 GHz dual-

coreCortex-A7 Mali-T658

HiSilicon Kirin

920 28 nm 1.7-2.0 GHz Cortex-A15

1.3-1.6 GHz quad-core

Cortex-A7 Mali-T628MP4 Huawei Honor 6

SAMSUNG Exyn

os 5 Octa (5410

model)[11][12]

28 nm 1.6-1.8 GHz quad-core Cortex-

A15

1.2 GHz quad-core

Cortex-A7 PowerVR SGX544MP3

Exynos 5-

basedSamsung

Galaxy S4

Samsung Exynos

5 Octa (5420

model)

28 nm 1.8-2.0 GHz quad-core Cortex-

A15

1.3 GHz quad-core

Cortex-A7 Mali-T628MP6

Exynos 5-

basedSamsung

Galaxy Note 3

Samsung Exynos

5 Octa (5422

model)

28 nm 2.1 GHz quad-core Cortex-A15 1.5 GHz quad-core

Cortex-A7 Mali-T628MP6

Exynos 5-

basedSamsung

Galaxy S5,Odroid-

XU3

Samsung Exynos

5 Hexa (5260

model)

28 nm 1.7 GHz dual-core Cortex-A15 1.3 GHz quad-core

Cortex-A7 Mali-T624

Samsung Galaxy

Note 3 Neo

Samsung Exynos

5 Octa (5430

model)

20 nm 1.8 GHz quad-core Cortex-A15 1.3 GHz quad-core

Cortex-A7 Mali-T628MP6

Samsung Galaxy

Alpha[15]

Samsung Exynos

5 Octa (5433

model)

20 nm 1.9 GHz quad-core Cortex-A57 1.3 GHz quad-core

Cortex-A53 Mali-T760

Samsung Galaxy

Note 4 (SM-

N910C)

Renesas Mobile

MP6530[17] 28 nm 2 GHz dual-core Cortex-A15

1 GHz dual-core Cortex-

A7 PowerVR SGX544

Allwinner A80

Octa 28 nm Quad-core Cortex-A15 Quad-core Cortex-A7 PowerVRG6230

MediaTek MT659

5 28 nm 2.2 GHz quad-core Cortex-A17

1.7 GHz quad-core

Cortex-A7

PowerVR G6200

(600 MHz)

MediaTek

MT6595M 28 nm 2.0 GHz quad-core Cortex-A17

1.5 GHz quad-core

Cortex-A7

PowerVR G6200

(450 MHz)

MediaTek

MT6595 Turbo 28 nm 2.5 GHz quad-core Cortex-A17

1.7 GHz quad-core

Cortex-A7

PowerVR G6200

(600 MHz)

Company Promoted image of Exynos 5

Qualcomm Snapd

ragon 808

(MSM8992)

20 nm 2.0 GHz dual-core Cortex-A57 Quad-core ARM Cortex-

A53 Adreno 418

Qualcomm

Snapdragon 810

(MSM8994)

20 nm 2.0 GHz quad-core Cortex-A57 Quad-core ARM Cortex-

A53 Adreno 430

Chapter 6

Applications

Navigation:

Navigation devices are increasing in popularity everywhere, from cars to mobile phones,

helping people find the correct direction to a particular location or destination from a given

starting point. Advanced navigation devices also assist the disabled (such as the blind) by

reading out directions and providing other useful features. Navigation devices today rely on

satellite-based services, such as Global Positioning System (GPS), GLONASS, or Galileo to

function, but may also use other connectivity solutions, such as 3G and Wi-Fi, depending

upon the capabilities built into the device.

The GPS system uses data from a network of satellites to obtain location information

anywhere on or near the surface of earth. The 21st century has seen a remarkable increase in

the penetration of GPS based navigation services, primarily due to advances in

the ELECTRONICS and semiconductor technology space, making the availability of GPS

services on devices, such as mobile phones, possible.

The GPS technology has evolved significantly, from the simple devices that showed people

their geographical locations, to the latest ones that possess Internet access capabilities and

allow two-way communication. GPS has also been deployed in the MARKETING segment,

through the concept of "GPS Advertising" - sending custom advertising messages to select

GPS receivers.

Block Diagram for a typical navigation device.

Smart Phone:

Mobile (or cellular) phones have become one of the most common communications

devices in everyday use. Apart from simple voice calls, today's mobile phones are capable of

offering many other services, such as text and multimedia messaging, entertainment

(playback of stored music and FM radio), and photography. High-end mobile phones, which

run on specially designed technology platforms and contain advanced computing and

connectivity features (such as Internet and email access), are generally known as

smartphones. With advances in all fields of technology, the line between a normal phone and

a smartphone has blurred significantly.

Samsung is the industry leader when it comes to supplying components for mobile

phones - from the most basic, entry-level instruments, to the most advanced, multi-functional

handsets that are complete computers in themselves. OEMs and designers across the globe

rely on Samsung for world-class devices and components, such as memory, processors, and

displays, to bring their designs to MARKET in the shortest time and at the lowest cost.

Block diagram of Smart Phone Architecture

Graphical performance without compromising power consumption

Low Power Multitasking

WQXGA Display in Mobile device

Incredible experience for 3D gaming

References www.wikipedia.org

www.samsung.com

www.arm.com