GUIDED BY:

The 22 nanometer (22 nm) is the next CMOS process step following the 32 nm

step on the International Technology

Roadmap for Semiconductors

(ITRS).

It was first introduced by semiconductor

companies in 2008 for use in memory

products

Transistors using a three-dimensional

structure will be put into high-volume manufacturing.

Intel will introduce a revolutionary 3-D transistor design

called Tri-Gate, the 22-nanometer (nm) node in an Intel chip

codenamed "ivybridge

INTRODUCTION

MOORE’S LAW

"THE NUMBER OF TRANSISTORS INCORPORATED IN A CHIP WILL APPROXIMATELY DOUBLE EVERY 24 MONTHS."

—GORDON MOORE

Moore's Law is a forecast for the pace of silicon technology development that states that roughly every 2 years transistor density will double, while increasing functionality and performance and decreasing costs.

Transistors continue to get smaller, cheaper and more energy efficient in accordance with Moore's Law - named for Intel co-founder Gordon Moore

Because of this, Intel has been able to innovate and integrate, adding more features and computing cores to each chip, increasing performance, and decreasing manufacturing cost per transistor.

TECHNOLOGY ROADMAP

Process

name

P1266 P1268 P1270 P1272 P1274

Lithography 45nm 32nm 22nm 14nm 10nm

1st

Production

2007 2009 2011 2013 201590 nm2003

180 nm1999

130 nm2001

65 nm2005

45 nm2007

22 nm2011

OnTrack

32 nm2009

TRI-GATE TRANSISTORS

WHY TRI-GATE TRANSISTORS

Scaling of planar

transistors requires the

scaling of gate oxides

and source/drain

junctions and

transistor gate length

Scaling of planar

transistors leads to the

worsening electrostatics

and short-channel

performance with reducing

gate-length dimension

Performance and power

dissipation needed to be

improved.

WHAT IS TRI-GATE?

Definition

Use of gate in FET

Power and cost

Global perspective

The Tri-Gate technology gets its name from the fact that

transistors using it have conducting channels that are

formed on all three sides—two on each side, one across the

top—of a tall and narrow silicon fin that rises vertically

from the silicon substrat

The Gate is the terminal that drives the transistor on and off, and acts like a capacitance where charge is stored making the channel conductive

• while meeting the overall power, cost and size requirements for a range of market segment needs. Replacing the "2D" gates with super-thin fins that rise up from the silicon base.

Ivy Bridge-based Intel Core family processors will be the first high-volume

chips to use 3-D Tri-Gate transistors. The performance, functionality and

software compatibility of Intel architecture

HISTORY OF TRIGATE

2006 2008 2009 2010 20112002

MAKING OF A CHIP

Sand / Ingot / Wafer Photolithography, Implantation, etching Gate Formation, Metal Deposition and Layers Wafer Sort , Packing and Testing

COMPARISON B/W 2D AND 3D

MODIFICATIONS IN PLANAR TRANSISTORS

•At the same switching speed,

Intel's 22nm 3D Tri-Gate

transistors can run at 75 - 80%

of the operating voltage of

Intel's 32nm transistors. This

results in lower active power

at the same frequency.

Transistor Operation

The “fully depleted” characteristics of Tri-Gate transistors provide a

steeper sub-threshold slope that reduces leakage current

22 nm Tri-Gate transistors can operate at lower voltage

with good performance, reducing active power by >50%

CHACTERISTICS

Reduction in power

dissipation

Increased pathway for

electrical signals

Drives 20% more current

than traditional planar

transistors

High switching speed

High performance with reduced

size

Better control over leakage

current due to 3D structure

MULTIPLE FINS CAN BE ADDED TO PRODUCE OVERALL HIGHER

PERFORMANCE

BENEFITS

Dramatic performance gain at low operating voltage , better than Bulk, PDSOI,FDSOI37% performance increase at low voltage 50% power reduction at constant performanceImproved switching characteristics Higher drive current for a given transistorOnly 2 – 3% cost adderMore compact hence enabling higher transistor density

CONCLUSION

•Intel is introducing revolutionary Tri-Gate transistors on its 22 nm logic technology •Tri-Gate transistors provide an unprecedented combination of improved performance and energy efficiency •22 nm processors using Tri-Gate transistors, code-named Ivy Bridge, are now demonstrated working in systems •Intel is on track for 22 nm production in 2H „11, maintaining a 2-year cadence for introducing new technology generations •This technological breakthrough is the result of Intel’s highly coordinated research-development-manufacturing pipeline •Tri-Gate transistors are an important innovation needed to continue Moore’s Law

REFERENCES

1 Technology Scaling and Roadmap for 22nm CMOS and beyond March 13, 2009 @Kyongpook National University by Hiroshi Iwai Tokyo Institute of Technology2 www.intel.com/pressroom.3 http://www.engadget.com/2009/09/22/intel-announces-22nm-chips-for-2011/4 http://www.intel.com/content/www/us/en/silicon-innovations/22nm-technology-how-transistors-are-made-video.html5 http://www.intel.in/content/www/in/en/silicon-innovations/intel-22nm-technology.html6.http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6242496&url=http%3A%%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D62424967.http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6176988&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D61769888.http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=5475000&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D5475000

THANK YOU..!

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