Si Pixel Tracking Detectors
•Introduction•Sensor•Readout Chip•Mechanical Issues•Performance -Diamond
36 MPix150x150mm 2
Vertex High Radiation Stand- resolution multi hardness alone
Tracking Trig80’s- CCD detectors- SLD X
Si - diode x x 90’s- Si - diode- Omega2/3,DELPHI X X x Si - diode- SSC/LHC X X X
Diamond x x x2000’s Si - diode/ LHC/BTEV X X X X
Diamond X X X X
HISTORICAL
Single Track
Track ClusterPixel Tracker• Pixel Size • Occupancy• Charge Sharing• S/N• ExB Drift• Radiation Damage LHC - 1014 /cm2/yr
Charge Sharing
Vertex Resolution(20-30)m IP
& Trigger
Radiation Damage Effects
•Increase in volume leakage current.•Build-up of effective p-doping (bulk inversion).•Charge trapping.•Reverse Annealing- inactive defects become active, increasing effective p-doping. (T-dependent)
Basic Diode Structure
•.
BASIC PACKAGE•Sensor Bump Bonded to Readout Chip•In or Pb/Sn for Bumps•Wafer Thinning•Dicing•Yield
Sensors & Isolation
• Guard Ring Design p-stop, p-spray• Radiation Damage
-Bulk Damage-Depletion Voltage
• Type Inversion • Self Annealing/Thermal
• Diamond Detectors -Radiation Hard -Simple Architecture
n+ n- p+
Single Ring p-stop Design
ElectrodeDiamondElectrode
CVD DIAMOND
READOUT CHIP (CMOS)
•Radiation Hard Architecture (SOI)•Military/ Space Science •Analoque/Digital•SEU, Latchup (10-6 -10-10)•DMILL .80m Bi-CMOS•IBM .25m <-----
PSI Readout Chip
Thin Si Layer
Oxide
Si Substrate
BUMP and FLIP-CHIP Interconnect
•Choice of Indium or Solder (PbSn)•Indium -Evaporation, 2 bumps, Allignment -High Yield
•Electroplated Solder -Reflow techniques ~180oC. Flux, Self Alligning -Complex UBM (UnderBump Metalization)
-Excellent Electrical and Mechanical Contact
Readout Chip
Sensor
Reflow and Wick-over
CONTROL and INTERFACE BLOCK
DOUBLE COLUMN PERIPHERY
TIME STAMP and READOUT BUS
I2C DACSReadout Amplifier
TransmissionLine DriversPower Supply / Clock Pads
10.5mm
52 x 53 array150 x 150m
400K transistors~30%yield
8.0mm
TTRIGGER BLK
FEC FED
TBM
Opticallinks
Detectors
Clk
Fast Trigger
DATAFAST TRIGGER OUT (L3)
SLOW CONTROLUPLOADS 40MHz I2C
Pseudo -TRIGGER PAD
• Low Mass Support Structures
- Be , C-Fiber
• Wafer Thinning
-.25 m lithography on 8”800m
• Dicing Accuracy and Placement
• Radiation Hard Glues/Epoxies
• Cooling (KWs per Detector)
- (10-20) oC
– Flurocarbons (high mass)
– Evaporative Cooling(low mass)
• Thermal Expansion
COOLINGMECHANICAL
Be Panel
HDI
High Density Interconnects
SensorVHDI
ROC
Silicon Plate
Bump Bonds
Wire Bonds
PERFORMANCE (Si & Diamond in CERN Test Beam)
Z, B
X
Y
20o
Row
Beam
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Double Column
Charge Sharing
Pixels150 x150 m2
D:\Transfer from Bob\Pictures\Test Beam Hardware\Geometry Pixels.ppt 8mm
ROC, PSI36:11 double columns x 30 rows
Vienna Repeater
150 m
= 14 mover pixel
Pixels at 20o to beam
150 m / 12 = 43 m = 46 mover pixel
Charge sharing vs position
Charge sharing vs position
Pixels normal to beam
150 m
PERFORMANCE (cont)Si 25000e/mip 2000e noise 99% efficiencyDia 9000e/mip 2000e noise 95% efficiency
CONCLUSIONS
• Si Pixel Detectors- a Great Challenge!
• Many Difficult Technologies to Master.
• Much Will be Solved in LHC/BTeV era.
• HEP Must Learn to Deal with High Development Costs.
• Trigger Possibilities Abundant.
• Diamond Detectors Feasible.
X-Ray Crystalography