30714HK/60612TKIM/O1409TKIM TC-00002092 PE No. A1430-1/5
http://onsemi.com
Semiconductor Components Industries, LLC, 2014March, 2014
ECH8310P-Channel Power MOSFET–30V, –9A, 17mΩ, Single ECH8
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Features • 4V drive • Halogen free compliance • Protection diode in
SpecificationsAbsolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID --9 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --60 AAllowable Power Dissipation PD When mounted on ceramic substrate (900mm
2×0.8mm) 1.5 WChannel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensionsunit : mm (typ)7011A-002
Ordering number : ENA1430B
Product & Package Information• Package : ECH8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
JMLot No.
TL
1 : Source2 : Source3 : Source4 : Gate5 : Drain6 : Drain7 : Drain8 : Drain
ECH8
1 4
8 5
0.15
0 to 0.02
0.25
0.25
2.8
2.3
0.65
2.9
0.3
0.9
0.07
Top View
Bottom View
ECH8310-TL-H
8 7 6 5
1 2 3 4
ORDERING INFORMATIONSee detailed ordering and shipping information on page 2 of this data sheet.
ECH8310
No. A1430-2/5
Electrical Characteristics at Ta=25°C
Parameter Symbol ConditionsRatings
Unitmin typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --30 V
Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0V --1 μAGate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μACutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance | yfs | VDS=--10V, ID=--4.5A 12 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=--4.5A, VGS=--10V 9 13 17 mΩRDS(on)2 ID=--2A, VGS=--4.5V 12 20 28 mΩRDS(on)3 ID=--2A, VGS=--4.0V 13.5 23 32.5 mΩ
Input Capacitance Ciss
VDS=--10V, f=1MHz
1400 pF
Output Capacitance Coss 350 pF
Reverse Transfer Capacitance Crss 250 pF
Turn-ON Delay Time td(on)
See specified Test Circuit.
10 ns
Rise Time tr 45 ns
Turn-OFF Delay Time td(off) 134 ns
Fall Time tf 87 ns
Total Gate Charge Qg
VDS=--15V, VGS=--10V, ID=--9A
28 nC
Gate-to-Source Charge Qgs 4 nC
Gate-to-Drain “Miller” Charge Qgd 6 nC
Diode Forward Voltage VSD IS=--9A, VGS=0V --0.8 --1.2 V
Switching Time Test Circuit
Ordering InformationDevice Package Shipping memo
ECH8310-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free
PW=10μsD.C.≤1%
P.G 50Ω
G
S
D
ID= --4.5ARL=3.3Ω
VDD= --15V
VOUT
VIN
0V--10V
VIN
ECH8310
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
ECH8310
No. A1430-3/5
Stat
ic D
rain
-to-
Sour
ceO
n-St
ate
Res
ista
nce,
RD
S(on
) --
mΩ
Ambient Temperature, Ta -- °C
RDS(on) -- TaRDS(on) -- VGS
Stat
ic D
rain
-to-
Sour
ceO
n-St
ate
Res
ista
nce,
RD
S(on
) --
mΩ
IS -- VSD
Sour
ce C
urre
nt, I
S --
A
Diode Forward Voltage, VSD -- VDrain Current, ID -- A
| yfs | -- ID
Forw
ard
Tra
nsfe
r Adm
ittan
ce, |
yfs
| --
S
SW Time -- ID
Switc
hing
Tim
e, S
W T
ime
-- n
s
Drain Current, ID -- A
Ciss, Coss, Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Cis
s, C
oss,
Crs
s --
pF
ID -- VGS
Dra
in C
urre
nt, I
D -
- A
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
0
IT14478
0 --1.0--0.5 --1.5 --2.0 --2.5 --3.0 --3.5
--3
--1
--4
--2
--7
--5
--8
--6
--9VDS= --10V
--25°
C
Ta=7
5°C
25°C
--0.2 --0.4--0.3 --0.6--0.5 --1.0--0.9--0.8--0.7--0.001
--0.017532
2
--0.1753
2
2
--1.0753
2
--10753
IT14479
Ta=25°C
IT14480
IT14481 IT14482
Ta= --2
5°C75°
C
25°C
VDS= --10V
--25°
C
25°C
Ta=7
5°C
VGS=0V
100
10
7
7
5
3
3
2
5
2
--0.1 2 --1.0 --103 5 7 2 3 5 7
IT14483
VDD= --15VVGS= --10Vtd(off)
tr
tf
2
td(on)
ID= --2A
--4.5A
0 --2 --10 --12--8--6--4 --14 --160
10
20
30
60
50
40
80
70
0.1
2
5
3
2
7
1075
3
2
1.075
3
2--0.01 --0.1 2 25 73 2 --1.05 73 --105 73
0
1000
7
2
5
100
3
5
3
2
--20--4 --12 --14--10 --16 --18--8--2 --6
IT14484
f=1MHz
Ciss
Coss
Crss
--60 --40 --20 0 40 60 8020 140120100 1600
5
20
10
15
35
30
40
25
VGS= --4
.0V, ID=
--2.0A
VGS= --10
.0V, ID= --4.5
AVGS= --4
.5V, ID=
--2.0A
Drain-to-Source Voltage, VDS -- V
ID -- VDSD
rain
Cur
rent
, ID
--
A
IT15075
00
--9
--4
--3
--8
--7
--6
--5
--1
--2
--1.0--0.2 --0.3 --0.4--0.1 --0.5 --0.6 --0.7 --0.8 --0.9
--10.
0V
--4.0
V
VGS= --2.5V
--3.5
V
--6.0
V
--8.0
V
--4.5
V
ECH8310
No. A1430-4/5
PD -- Ta
Allo
wab
le P
ower
Dis
sipa
tion,
PD
--
W
Ambient Temperature, Ta -- °C IT144860
020 40
0.4
60 80 100 120 140 160
0.8
1.2
1.61.5
1.8
0.2
0.6
1.0
1.4
When mounted on ceramic substrate(900mm2×0.8mm)
A S O
Drain-to-Source Voltage, VDS -- V
Dra
in C
urre
nt, I
D -
- A
IT14500
2
2
357
--0.1
2
357
--1.0
--0.01--0.01 2 --1.05 732 --0.15 73 2 --105 73 2 53
Operation in thisarea is limited by RDS(on).
100msDC operation (Ta=25°C)
10ms
2
2
357
357
--10
--100 IDP= --60A
ID= --9A1ms
Ta=25°CSingle pulseWhen mounted on ceramic substrate (900mm2×0.8mm)
PW≤10μs
0 5 10 2015 25 300
--2
--4
--6
--8
--10
IT14485
VDS= --15VID= --9A
Total Gate Charge, Qg -- nC
VGS -- QgG
ate-
to-S
ourc
e V
olta
ge, V
GS
-- V
ECH8310
PS No. A1430-5/5
Note on usage : Since the ECH8310 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
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Outline Drawing Land Pattern Example ECH8310-TL-H
Mass (g) Unit
0.02* For reference mm
Unit: mm
0.4
0.6
2.8
0.65