30714HK/60612TKIM/O1409TKIM TC-00002092 PE No. A1430-1/5

http://onsemi.com

Semiconductor Components Industries, LLC, 2014March, 2014

ECH8310P-Channel Power MOSFET–30V, –9A, 17mΩ, Single ECH8

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Features • 4V drive • Halogen free compliance • Protection diode in

SpecificationsAbsolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS --30 V

Gate-to-Source Voltage VGSS ±20 V

Drain Current (DC) ID --9 A

Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --60 AAllowable Power Dissipation PD When mounted on ceramic substrate (900mm

2×0.8mm) 1.5 WChannel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +150 °C

Package Dimensionsunit : mm (typ)7011A-002

Ordering number : ENA1430B

Product & Package Information• Package : ECH8

• JEITA, JEDEC : -

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL Marking

Electrical Connection

JMLot No.

TL

1 : Source2 : Source3 : Source4 : Gate5 : Drain6 : Drain7 : Drain8 : Drain

ECH8

1 4

8 5

0.15

0 to 0.02

0.25

0.25

2.8

2.3

0.65

2.9

0.3

0.9

0.07

Top View

Bottom View

ECH8310-TL-H

8 7 6 5

1 2 3 4

ORDERING INFORMATIONSee detailed ordering and shipping information on page 2 of this data sheet.

ECH8310

No. A1430-2/5

Electrical Characteristics at Ta=25°C

Parameter Symbol ConditionsRatings

Unitmin typ max

Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --30 V

Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0V --1 μAGate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μACutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V

Forward Transfer Admittance | yfs | VDS=--10V, ID=--4.5A 12 S

Static Drain-to-Source On-State Resistance

RDS(on)1 ID=--4.5A, VGS=--10V 9 13 17 mΩRDS(on)2 ID=--2A, VGS=--4.5V 12 20 28 mΩRDS(on)3 ID=--2A, VGS=--4.0V 13.5 23 32.5 mΩ

Input Capacitance Ciss

VDS=--10V, f=1MHz

1400 pF

Output Capacitance Coss 350 pF

Reverse Transfer Capacitance Crss 250 pF

Turn-ON Delay Time td(on)

See specified Test Circuit.

10 ns

Rise Time tr 45 ns

Turn-OFF Delay Time td(off) 134 ns

Fall Time tf 87 ns

Total Gate Charge Qg

VDS=--15V, VGS=--10V, ID=--9A

28 nC

Gate-to-Source Charge Qgs 4 nC

Gate-to-Drain “Miller” Charge Qgd 6 nC

Diode Forward Voltage VSD IS=--9A, VGS=0V --0.8 --1.2 V

Switching Time Test Circuit

Ordering InformationDevice Package Shipping memo

ECH8310-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free

PW=10μsD.C.≤1%

P.G 50Ω

G

S

D

ID= --4.5ARL=3.3Ω

VDD= --15V

VOUT

VIN

0V--10V

VIN

ECH8310

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

ECH8310

No. A1430-3/5

Stat

ic D

rain

-to-

Sour

ceO

n-St

ate

Res

ista

nce,

RD

S(on

) --

mΩ

Ambient Temperature, Ta -- °C

RDS(on) -- TaRDS(on) -- VGS

Stat

ic D

rain

-to-

Sour

ceO

n-St

ate

Res

ista

nce,

RD

S(on

) --

mΩ

IS -- VSD

Sour

ce C

urre

nt, I

S --

A

Diode Forward Voltage, VSD -- VDrain Current, ID -- A

| yfs | -- ID

Forw

ard

Tra

nsfe

r Adm

ittan

ce, |

yfs

| --

S

SW Time -- ID

Switc

hing

Tim

e, S

W T

ime

-- n

s

Drain Current, ID -- A

Ciss, Coss, Crss -- VDS

Drain-to-Source Voltage, VDS -- V

Cis

s, C

oss,

Crs

s --

pF

ID -- VGS

Dra

in C

urre

nt, I

D -

- A

Gate-to-Source Voltage, VGS -- V

Gate-to-Source Voltage, VGS -- V

0

IT14478

0 --1.0--0.5 --1.5 --2.0 --2.5 --3.0 --3.5

--3

--1

--4

--2

--7

--5

--8

--6

--9VDS= --10V

--25°

C

Ta=7

5°C

25°C

--0.2 --0.4--0.3 --0.6--0.5 --1.0--0.9--0.8--0.7--0.001

--0.017532

2

--0.1753

2

2

--1.0753

2

--10753

IT14479

Ta=25°C

IT14480

IT14481 IT14482

Ta= --2

5°C75°

C

25°C

VDS= --10V

--25°

C

25°C

Ta=7

5°C

VGS=0V

100

10

7

7

5

3

3

2

5

2

--0.1 2 --1.0 --103 5 7 2 3 5 7

IT14483

VDD= --15VVGS= --10Vtd(off)

tr

tf

2

td(on)

ID= --2A

--4.5A

0 --2 --10 --12--8--6--4 --14 --160

10

20

30

60

50

40

80

70

0.1

2

5

3

2

7

1075

3

2

1.075

3

2--0.01 --0.1 2 25 73 2 --1.05 73 --105 73

0

1000

7

2

5

100

3

5

3

2

--20--4 --12 --14--10 --16 --18--8--2 --6

IT14484

f=1MHz

Ciss

Coss

Crss

--60 --40 --20 0 40 60 8020 140120100 1600

5

20

10

15

35

30

40

25

VGS= --4

.0V, ID=

--2.0A

VGS= --10

.0V, ID= --4.5

AVGS= --4

.5V, ID=

--2.0A

Drain-to-Source Voltage, VDS -- V

ID -- VDSD

rain

Cur

rent

, ID

--

A

IT15075

00

--9

--4

--3

--8

--7

--6

--5

--1

--2

--1.0--0.2 --0.3 --0.4--0.1 --0.5 --0.6 --0.7 --0.8 --0.9

--10.

0V

--4.0

V

VGS= --2.5V

--3.5

V

--6.0

V

--8.0

V

--4.5

V

ECH8310

No. A1430-4/5

PD -- Ta

Allo

wab

le P

ower

Dis

sipa

tion,

PD

--

W

Ambient Temperature, Ta -- °C IT144860

020 40

0.4

60 80 100 120 140 160

0.8

1.2

1.61.5

1.8

0.2

0.6

1.0

1.4

When mounted on ceramic substrate(900mm2×0.8mm)

A S O

Drain-to-Source Voltage, VDS -- V

Dra

in C

urre

nt, I

D -

- A

IT14500

2

2

357

--0.1

2

357

--1.0

--0.01--0.01 2 --1.05 732 --0.15 73 2 --105 73 2 53

Operation in thisarea is limited by RDS(on).

100msDC operation (Ta=25°C)

10ms

2

2

357

357

--10

--100 IDP= --60A

ID= --9A1ms

Ta=25°CSingle pulseWhen mounted on ceramic substrate (900mm2×0.8mm)

PW≤10μs

0 5 10 2015 25 300

--2

--4

--6

--8

--10

IT14485

VDS= --15VID= --9A

Total Gate Charge, Qg -- nC

VGS -- QgG

ate-

to-S

ourc

e V

olta

ge, V

GS

-- V

ECH8310

PS No. A1430-5/5

Note on usage : Since the ECH8310 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.

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Outline Drawing Land Pattern Example ECH8310-TL-H

Mass (g) Unit

0.02* For reference mm

Unit: mm

0.4

0.6

2.8

0.65