Diamond Detectors in High RadiationEnvironments
Harris KaganOhio State University
Advanced Instrumentation SeminarsSept. 5, 2007, SLAC
Outline of the Talk
Introduction - Motivation
Diamond Properties
Radiation Hardness Studies with Trackers
Diamond Pixel Modules
Beam Monitoring
Summary
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 1) Harris Kagan
Ohio State University
Introduction
Motivation: Tracking Devices Close to Interaction Region of Experiments
Scale is ∼ 1016 cm−2→ annual replacement of inner layers perhaps?
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 2) Harris Kagan
Ohio State University
Introduction
Motivation: Tracking Devices Close to Interaction Region of Experiments
Look for a Material with Certain Properties:
Radiation hardness (no frequent replacements)
Low dielectric constant → low capacitance
Low leakage current → low readout noise
Good insulating properties → large active area
Room temperature operation, Fast signal collection time → no cooling
Presented Here:
Polycrystalline Chemical Vapor Deposition (pCVD) Diamond
Single Crystal Chemical Vapor Deposition (scCVD) Diamond
ATLAS pCVD Diamond Pixel Module
ATLAS scCVD Diamond Pixel Module
BaBar pCVD diamond Beam Conditions Monitoring system
CDF pCVD diamond Beam Conditions Monitoring system
ATLAS pCVD diamond Beam Conditions Monitoring system
Reference → http://rd42.web.cern.ch/RD42
Diamonds supplied by and in collaboration with Element Six Ltd.
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 3) Harris Kagan
Ohio State University
The RD42 Collaboration
M. Barbero1, V. Bellini
2, V. Belyaev
15, E. Berdermann
8,
P. Bergonzo14
, H. Bol13
, M. Bruzzi5, V. Cindro
12, W. de
Boer13
, I. Dolenc12
, P. Dong21
, W. Dulinski10
,
V. Ermin9, R. Eusebi
7, F. Fizzotti
19, H. Frais-Kolbl
4,
A. Furgeri13
, K.K. Gan17
, A. Golubev11
, A. Gorisek3,
E. Griesmayer4, E. Grigoriev
11, F. Hartjes
16,
H. Kagan17,♦
, R. Kass17
, G. Kramberger12
,
S. Kuleshov11
, S. Lagomkarsino6, A. Lo Giudice
19,
I. Mandic12
, C. Manfredotti19
, A. Martemyanov11
,
M. Mathes1, D. Menichelli
5, S. Miglio
5, M. Mikuz
12,
M. Mishina7, S. Mueller
13, H. Pernegger
3, M. Pomorski
8,
R. Potenza2, S. Roe
3, C. Schmidt
8, S. Schnetzer
18,
T. Schreiner4, C. Schrupp
21, S. Sciortino
6, S. Smith
17,
R. Stone18
, C. Sutera2, M. Traeger
8, W. Trischuk
20,
C. Tuve2, J. Velthuis
1, E. Vittone
19, R. Wallny
21,
P. Weilhammer3,♦
, N. Wermes1
♦ Spokespersons
58 Participants
1 Universitat Bonn, Bonn, Germany2 INFN/University of Catania, Italy
3 CERN, Geneva, Switzerland4 Fachhochschule fur Wirtschaft und Technik, Wiener
Neustadt, Austria5 INFN/University of Florence, Florence, Italy
6 Department of Energetics/INFN Florence, Florence,Italy
7 FNAL, Batavia, U.S.A.8 GSI, Darmstadt, Germany
9 Ioffe Institute, St. Petersburg, Russia10 IPHC, Strasbourg, France
11 ITEP, Moscow, Russia12 Josef Stephan Institute, Ljubljana, Slovenia13 Universitat Karlsruhe, Karlsruhe, Germany
14 LETI (CEA-Technologies Avancees) DEIN/SPE -CEA Saclay, Gif-Sur-Yvette, France15 MEPHI Institute, Moscow, Russia16 NIKHEF, Amsterdam, Netherlands
17 The Ohio State University, Columbus, OH, U.S.A.18 Rutgers University, Piscataway, NJ, U.S.A.
19 Univerity of Torino, Italy20 University of Toronto, Toronto, ON, Canada
21 UCLA, Los Angeles, CA, USA
21 Institutes
Detectors in BaBar, Belle, CDF, ATLAS; planned DESY, CMS, ALICE, LHCb
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 4) Harris Kagan
Ohio State University
CVD Diamond Properties
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 5) Harris Kagan
Ohio State University
Introduction
Comparison of Various Materials
Property Diamond 4H-SiC Si
Band Gap [eV] 5.5 3.3 1.12Breakdown field [V/cm] 107 4×106 3×105
Resistivity [Ω-cm] > 1011 1011 2.3×105
Intrinsic Carrier Density [cm−3] < 103 1.5×1010
Electron Mobility [cm2V−1s−1] 1800 800 1350Hole Mobility [cm2V−1s−1] 1200 115 480Saturation Velocity [km/s] 220 200 82
Mass Density [g cm−3] 3.52 3.21 2.33Atomic Charge 6 14/6 14Dielectric Constant 5.7 9.7 11.9Displacement Energy [eV/atom] 43 25 13-20
Energy to create e-h pair [eV] 13 8.4 3.6Radiation Length [cm] 12.2 8.7 9.4Spec. Ionization Loss [MeV/cm] 4.69 4.28 3.21Ave. Signal Created/100 µm [e] 3600 5100 8900Ave. Signal Created/0.1% X0 [e] 4400 4400 8400
Low dielectric constant - low capacitance Large bandgap - low leakage currentLarge energy to create an eh pair - small signal
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 6) Harris Kagan
Ohio State University
Introduction
What About Silicon?
Silicon is the standard detector material in High Energy Physics
Fast signals,
Localized ionization → position sensitivity,
Free standing → minimum dead material
But silicon has a problem with radiation
Change in material properties (effective doping)
→ higher depletion voltage or under depletion
Increase of leakage current → shot noise, thermal runaway
Increase of trapping → loss of charge
Silicon operated at E=3V/µm (1000V) Silicon operated at -20C
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 7) Harris Kagan
Ohio State University
Introduction
Chemical Vapor Deposition (CVD) Diamond Growth:
Micro-Wave Reactor Schematic Side View of pCVD Diamond
(Courtesy of Element Six)
Diamonds are “synthesized” from a plasma
The diamond “copies” the substrate
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 8) Harris Kagan
Ohio State University
Diamond Properties
Detectors Constructed with Diamond:
Signal formation
e-h Creation
Charged Particle
Electrodes
Diamond
Vbias
Amplifier
Schematic Side View
Q=d
tQ0 where d = collection distance = distance e-h pair move apart
d=(µeτe + µhτh)E
d=µEτ = vτ
with µ = µe + µh → v = µ Eand τ = µeτe+µhτh
µe+µh
I=Q0v
d
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 9) Harris Kagan
Ohio State University
Properties - Polycrystalline CVD Diamond
Latest Material: pCVD Diamond Measured with a 90Sr Source
Contacts on both sides - structures from µm to cm
Usually operate at E=1V/µm
Test Procedure: dot → strip → pixel on same diamond!
h1aEntries 2000Mean -15.27RMS 268.6
Signal Size (Electrons)0 5000 10000 15000 20000 25000 30000 35000
Nu
mb
er
0
200
400
600
800
1000
1200
1400
h1aEntries 2000Mean -15.27RMS 268.6
Pedestal
Wafer3 0V - Ped, Gain Corrected
h2aEntries 2000Mean 1.134e+04RMS 5641
Signal Size (Electrons)0 5000 10000 15000 20000 25000 30000 35000
Nu
mb
er
0
20
40
60
80
100
h2aEntries 2000Mean 1.134e+04RMS 5641
Signal
Wafer3 Charge - Ped, Gain Corrected
QMP = 8500-9000e Mean Charge = 11300e
Source data well separated from 0 Collection Distance now ≈ 300µm Most Probable Charge now ≈ 9000e 99% of PH distribution above 4000e FWHM/MP ≈ 0.95 — Si has ≈ 0.5 This diamond available in large sizes
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 10) Harris Kagan
Ohio State University
Properties - Polycrystalline CVD Diamond
Recent Polycrystalline CVD Diamond
Electric Field (V/mu)0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Electric Field (V/mu)0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Co
llect
ion
Dis
tan
ce (
mm
)
-0.1
-0.05
-0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
E6 Wafer 1
Left: Recent pCVD wafers ready for test - Cr/Au dots are 1 cm apartRight: Collection distance from a dot in the pCVD wafer
pCVD diamond wafers can be grown >12 cm diameter, >2 mm thickness.
Wafer collection distance now typically 250µm (edge) to 310µm (center).
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 11) Harris Kagan
Ohio State University
Properties - Single Crystal CVD Diamond
Recently Single Crystal CVD (scCVD) Diamond has been Fabricated
RD42 has a research contract with Element Six to develop this material.
scCVD diamond can be grown ≈ 10 mm × 10mm, >1 mm thickness.
Largest scCVD diamond grown ≈ 14 mm × 14 mm.
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 12) Harris Kagan
Ohio State University
Properties - Single Crystal CVD Diamond
scCVD Diamond Measured with a 90Sr Source:
Signal Size (Electrons)0 5000 10000 15000 20000 25000 30000 35000 40000
h1aEntries 2500Mean 7899RMS 4798
Signal Size (Electrons)0 5000 10000 15000 20000 25000 30000 35000 40000
Nu
mb
er
0
50
100
150
200
250
h1aEntries 2500Mean 7899RMS 4798
CD168 Charge - Ped, Gain Corrected
0 5000 10000 15000 20000 25000 30000 35000 40000
h1aEntries 5000Mean 1.483e+04RMS 4238
0 5000 10000 15000 20000 25000 30000 35000 400000
50
100
150
200
250
300
350
400
h1aEntries 5000Mean 1.483e+04RMS 4238
071415 Charge - Ped, Gain Corrected
Signal Size (Electrons)0 5000 10000 15000 20000 25000 30000 35000 40000
h1aEntries 2500Mean 1.136e+04RMS 4165
Signal Size (Electrons)0 5000 10000 15000 20000 25000 30000 35000 40000
Nu
mb
er
0
20
40
60
80
100
h1aEntries 2500Mean 1.136e+04RMS 4165
scCVD Charge - Ped, Gain Corrected
Signal Size (electrons)0 5000 10000 15000 20000 25000 30000 35000 40000
h1aEntries 2500Mean 2.609e+04RMS 5689
Signal Size (electrons)0 5000 10000 15000 20000 25000 30000 35000 40000
Nu
mb
er
0
10
20
30
40
50
60
70
h1aEntries 2500Mean 2.609e+04RMS 5689
CD141 Charge - Ped, Gain Corrected
Pulse height spectrum of various scCVD diamonds (t=210, 320, 435, 685 µm)
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 13) Harris Kagan
Ohio State University
Properties - Single Crystal CVD Diamond
scCVD Diamond Most Probable Charge versus Thickness
Thickness (mm)0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Thickness (mm)0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Mo
st P
rob
able
Ch
arg
e (E
lect
ron
s)
0
5000
10000
15000
20000
25000
scCVD Charge versus Thickness
High quality scCVD diamond can collect full charge for thickness 880µm
Width of landau distribution is ≈ 1/2 that of silicon, ≈ 1/3 that ofpCVD diamond
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 14) Harris Kagan
Ohio State University
Diamond Properties - Comparison
HV Characteristics
High quality scCVD diamond has larger signal than pCVD diamond
High quality scCVD diamond collects all the charge at E=0.2V/µm
High quality scCVD diamond does not pump!
pCVD diamond available in larger sizes than scCVD diamond
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 15) Harris Kagan
Ohio State University
Properties - Single Crystal CVD Diamond
Charge Collection Properties: Transient Current Measurements (TCT)
Measure charge carrier properties separately for electron and holes
Use α-source (Am241) to inject charge
- penetration ≈ 14 µm (thickness of diamonds ≈ 470 µm)
- use positive and negative applied voltage
Amplify ionization current
Extracted parameters: Transit time, velocity, lifetime, space charge, pulse shape, charge.
H. Pernegger, et al., “Charge-carrier Properties in Synthetic Single-crystal Diamondmeasured with the Transient-current Technique”, J. Appl. Phys. 97, 073704 (2005)
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 16) Harris Kagan
Ohio State University
Properties - Single Crystal CVD Diamond
Drift Velocity and Lifetime:
Average drift velocity for electrons and holes: ve,h = d/tc
Extract µ0 and saturation velocity: v = µ0E1+µ0E/vs
For this sampleµ0e
= 1714 cm2/Vsµ0h
= 2064 cm2/Vsvse
= 0.96 × 107 cm/s = 96 km/svsh
= 1.41 × 107 cm/s = 141 km/s
From the drift velocity deduce the lifetimes > 35 ns → >> transit time so chargetrapping not the issue
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 17) Harris Kagan
Ohio State University
Properties - Single Crystal CVD Diamond
Energy Resolution:
FWHM: 17keV @ 5.4MeV → spectroscopic material
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 18) Harris Kagan
Ohio State University
Radiation Hardness
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 19) Harris Kagan
Ohio State University
Radiation Hardness Studies with pCVD Trackers
pCVD Diamond Trackers:
Patterning the diamond → pads, strips, pixels!
Successfully made double-sided devices; could be made basically edgeless.
Use trackers in radiation studies - charge and position.
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 20) Harris Kagan
Ohio State University
Radiation Hardness Studies with pCVD Trackers
Diamond Proton Irradiation - previously:
Signal to Noise
2 strip transparent signal to single strip noise [ ]0 50 100 150 200 250
entr
ies/
bin
[1/
100]
0
100
200
300
400
500
600
700
800before irradiation
mean 57, most prob. 41FWHM 54
after 1 E15 protons/cm2
mean 49, most prob. 35FWHM 41
Diamond CDS-69 at 0.9 V/µm
after 2.2 E 15 protons/cm2
and re-metalizationmean 47, most prob. 35FWHM 36
Signal from Irradiated Diamond Tracker
Data taken over a period of 2 years Dark current decreases with fluence 15% loss of S/N at 2.2 × 1015/cm2
Resolution improves 35% at 2.2 ×
1015/cm2
Resolution
entr
ies/
2µm
[ ]
0
100
200
300
400
500
600
700
800
Residual Distributions, Proton Irradiated Diamond
Diamond CDS-69
before irradiationσ = 11.5 µm
2-strip center ofgravity method
0
200
400
600
800
1000
CDS-69
after 1E15 p/cm2
σ = 9.1 µm
residual, uh-ut, [µm]-100 -80 -60 -40 -20 0 20 40 60 80 100
0
200
400
600
800
1000
1200
CDS-69
after 2.2 E 15 p/cm2
and re-metalization
σ = 7.4 µm
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 21) Harris Kagan
Ohio State University
Radiation Hardness Studies with pCVD Trackers
Proton Irradiation - now:
Irradiation (x10^15 p/cm^2)0 5 10 15 20 25
Rel
ativ
e S
ign
al
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Preliminary Summary of Proton Irradiation
Summary of proton irradiation results for pCVD diamond at E=1V/µm andE=2V/µm (green square) after 1.8 × 1016 p/cm2 (∼500Mrad)
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 22) Harris Kagan
Ohio State University
Radiation Hardness Studies with pCVD Trackers
Proton Irradiation - Signal Charge/Noise:
Irradiation (x10^15 p/cm^2)0 2 4 6 8 10 12 14 16 18 20
Sig
nal
Ch
arg
e/N
ois
e
0
10
20
30
40
50
60
70
80
Diamond
Pixel Detector Signal to Noise
Measured in November 2006 Test Beam Diamond ATLAS pixel detector noise 140e (low C, low I) Silicon ATLAS pixel detector noise 180e 3D Silicon ATLAS pixel detector noise 310e Silicon signal less than diamond; 3D Silicon signal larger by factor of 2
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 23) Harris Kagan
Ohio State University
pCVD and scCVD Pixel Detectors
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 24) Harris Kagan
Ohio State University
ATLAS Diamond Pixel Detectors
Constructing a full ATLAS Diamond Pixel Module:
Various stages of making a module - Element Six (growth), OSU (metalization), IZM(carrier support, bump-bonding), Bonn (electronics, testing)
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 25) Harris Kagan
Ohio State University
ATLAS Diamond Pixel Detectors
A full 16 Chip ATLAS diamond pixel module
Module tested in Bonn
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 26) Harris Kagan
Ohio State University
ATLAS Diamond Pixel Detectors
The ATLAS pixel module - Bare Chip, No Detector - Noise, Threshold
Results: Bare Noise ∼ 140e, Bare Mean Threshold ∼ 1500e,Bare Threshold Spread ∼ 25e.
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 27) Harris Kagan
Ohio State University
ATLAS Diamond Pixel Detectors
The full ATLAS diamond pixel module - Noise, Threshold
Results: Noise ∼ 137e, Mean Threshold 1454e, Threshold Spread ∼ 25e.Noise, threshold, threshold spread do not change from bare chip.
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 28) Harris Kagan
Ohio State University
ATLAS Diamond Pixel Detectors
The full ATLAS diamond pixel module - Correlation, Resolution
Excellent correlation with telescope
Resolution dominated by 6 GeV electron multiple scattering.
Preliminary residual ∼ 17µm - includes contribution from multiple scattering.
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 29) Harris Kagan
Ohio State University
ATLAS Diamond Pixel Detectors
The full ATLAS diamond pixel module - Efficiency
Efficiency0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1
effDistMapEntries 105
Mean 0.9659
RMS 0.03243
Efficiency0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1
Nu
mP
ixel
0
5
10
15
20
25
30
35effDistMap
Entries 105
Mean 0.9659
RMS 0.03243
Efficiency
Preliminary efficiency >97.5%- still need to correct tracking errors, multiple scattering.- still need better fiducial region.
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 30) Harris Kagan
Ohio State University
ATLAS Diamond Pixel Detectors
Multiple Scattering - Telescope Resolution at CERN and DESY
Telescope resolution CERN ∼ 7µm; DESY ∼ 37µm.
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 31) Harris Kagan
Ohio State University
ATLAS Diamond Pixel Detectors
The First scCVD ATLAS diamond pixel detector
The first device → odd shaped but looks good
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 32) Harris Kagan
Ohio State University
ATLAS Diamond Pixel Detectors
The First scCVD ATLAS diamond pixel detector
The hitmap plotted for all scintillation triggers with trigger in telescope.
The raw hitmap looks goods - ∼ 1 dead pixel
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 33) Harris Kagan
Ohio State University
ATLAS Diamond Pixel Detectors
The First scCVD ATLAS diamond pixel detector - Raw Position Correlation
Plot contains all scintillator triggers with “track” trigger in telescope
The pixel detector hits correlate well with the telescope hits
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 34) Harris Kagan
Ohio State University
ATLAS Diamond Pixel Detectors
The First scCVD ATLAS diamond pixel detector - Raw Pulse Height
100V 400V
Use Time Over Threshold to get Pulse Height
30 TOT counts ∼ 10,000e
Two peaks: single pixel hit events (higher), multi-pixel hit events (lower)
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 35) Harris Kagan
Ohio State University
ATLAS Diamond Pixel Detectors
The First scCVD ATLAS diamond pixel detector - Charge Sharing
Charge sharing as ex-pected
Cluster signal as expected Efficiency 99.98%
Cluster Signal Efficiency
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 36) Harris Kagan
Ohio State University
Next Steps
Re-Test ATLAS Pixel Module at CERN
Done - data being looked at → Thesis
Irradiate scCVD and pCVD diamonds
pCVD to 2 × 1016 and scCVD to 2 × 1015p/cm2
Irradiate pCVD pixel modules (chip and detector)
Up to ∼ 1016
Move Metalization to Industry
Cleaner facilties
Metalization and bumping done at one facility
This should be easy ... IZM is interested
Produce 3-10 Modules
Evaluate production process
Full measure of efficiency, noise, etc.
Test of Modules
Beam test of production modules
Radiation hardness test of production modules
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 37) Harris Kagan
Ohio State University
Beam Condition Monitoring
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 38) Harris Kagan
Ohio State University
Beam Conditions Monitoring - BaBar, Belle, CDF, ATLAS
Motivation:
→ Radiation monitoring crucial for Si operation/abort system
→ Abort beams on large current spikes
→ Measure calibrated daily and integrated dose
Style:
DC current or Slow Readout Requires low leakage current Requires small erratic dark currents Allows simple measuring scheme
Examples: BaBar, Belle, CDF
Single Particle Counting Requires fast readout (GHz range) Requires low noise Allows timing correlations
Example: ATLAS
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 39) Harris Kagan
Ohio State University
Beam Conditions Monitoring - BaBar
M. Bruinsma, P. Burchat, S. Curry, A. Edwards, H. Kagan, R. Kass,D. Kirkby, S. Majewski, B. Petersen
The BaBar Diamond Radiation Monitors:
→ BaBar originally used silicon PIN diodes, leakage current increases 2nA/krad
→ After 100fb−1 signal≈10nA, noise≈ 1-2µA
→ Large effort to keep working, BaBar PIN diodes (H-plane) did not last past 2005
Photo of BaBar Prototype Devices Photo of Installed BaBar Device
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 40) Harris Kagan
Ohio State University
Beam Conditions Monitoring - BaBar
Data Taking in BaBar:
0
5
10
15
20
25
0 2500 5000 7500 10000 12500 15000 17500 20000 225000
200
400
600
800
1000
1200
1400
1600
1800
20000 2500 5000 7500 10000 12500 15000 17500 20000 22500
BE diamond current
BE:MID diode signal current (Sig 11)
LER current
Time/seconds
Dia
mon
d/D
iode
cur
rent
/nA
Time/seconds
HE
R c
urre
nt/m
A
Fast Abort Soft Abort
System operating for >4 years in BaBar and works well! Diamonds have taken over for PIN diodes in horizontal plane.
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 41) Harris Kagan
Ohio State University
Beam Conditions Monitoring - Unresolved Issues
Diamond Current Increases as Magnetic Field Goes Off
Erratic Dark Currents! Not fully understood.
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 42) Harris Kagan
Ohio State University
Beam Conditions Monitoring - Unresolved Issues
But They Go Away in a Magnetic Field:
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 43) Harris Kagan
Ohio State University
Beam Conditions Monitoring - CDF
P. Dong, R. Eusebi, A. Sfyrla, R. Tesarek, W. Trischuk, R. Wallny
The CDF Diamond Radiation Monitors:
Photo of CDF Prototype Devices Photo of Installed CDF Device
The installed CDF device has thirteen diamonds
Eight inside CDF - four per side
Five outside the experiment at calibration stations near Beam LossMonitors (BLM’s)
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 44) Harris Kagan
Ohio State University
Beam Conditions Monitoring - CDF
Data Taking in CDF:
Two diamonds operating in CDF since Fall 2004.
Full system installed - June 2006!
Inside detector is the place to be by an order of magnitude!
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 45) Harris Kagan
Ohio State University
Beam Conditions Monitoring - CDF
Beam Abort in CDF:
Both diamonds respond quicker than BLM and abort signal.
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 46) Harris Kagan
Ohio State University
Beam Conditions Monitoring - ATLAS
A. Gorisek, M. Cadabeschi, V. Cindro, I. Dolenc, E. Griesmayer,H. Frais-Kolbl, H. Kagan, M. Mikuz, H. Pernegger, S. Smith, W. Trischuk,P. Weilhammer
Idea: Time of flight measurement to distinguish collisions from background
Detectors placed at z = ± 1.9m and r = 55mm (η ∼ 4.2, ∆t = 12.3ns) Detectors must be able to withstand ∼50Mrad in 10yrs Detectors plus electronics must have excellent time resolution (∼1ns rise
time, 2-3ns pulse width, 10ns baseline restoration)
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 47) Harris Kagan
Ohio State University
ATLAS Beam Conditions Monitoring
Design: Inside the ATLAS Beam Pipe Support Structure (BPSS)
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 48) Harris Kagan
Ohio State University
Electronics
Frontend Amplifiers:
0 200 400 600 800 10000
0.001
0.002
0.003
0.004
signals
0
0.2
0.4
0.6
-310
background
0
2
4
6
SNR
ν(MHz)0 200 400 600 800 1000 0 200 400 600 800 1000
ν(MHz) ν(MHz)
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 49) Harris Kagan
Ohio State University
Electronics
Mechanical Assembly:
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 50) Harris Kagan
Ohio State University
Electronics
Backend Electronics:
NINO provides trigger Time and Time Over Threshold
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 51) Harris Kagan
Ohio State University
System Response
MIP Pulses:
time to trigger [ns]-70 -65 -60 -55 -50 -45 -40
ou
tpu
t vo
ltag
e [V
]0
0.002
0.004
0.006
0.008
0.01Atlas BCM prototype moduledouble diamond assembly500 MHz FE electronics
1.9 ns FWHM
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 52) Harris Kagan
Ohio State University
Beam Test Results
Testbeam Setup:
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 53) Harris Kagan
Ohio State University
Beam Test Results
Hitmap:
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 54) Harris Kagan
Ohio State University
Beam Test Results
Efficiency and Occupancy:
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 55) Harris Kagan
Ohio State University
Beam Test Results
Signal and Noise:
Signal is 271 ADC counts; Noise is 20 ADC
Measured S/N = 13.5±2
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 56) Harris Kagan
Ohio State University
Present Status
Installation:
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 57) Harris Kagan
Ohio State University
Summary
Further Progress in Charge Collection
300 µm collection distance diamond attained in wafer growth
FWHM/MP ∼ 0.95 – Working with manufacturers to increase uniformity
Single Crystal diamonds look quite attractive for special applications
Radiation Hardness of Diamond Trackers
Using trackers allows a correlation between S/N and Resolution
With Protons:
Dark current decreases with fluence
E=1V/µm: 15% S/N loss at 2.2 × 1015/cm2, 25% signal at 1.8 × 1016/cm2
E=2V/µm: 33% signal at 1.8 × 1016/cm2
Resolution improves 35% at 2.2 × 1015/cm2
Diamond Pixel Detectors
Successfully tested a complete ATLAS module and scCVD module
Bump bonding yield ≈ 100 %
Excellent correlation between telescope and pixel data - stable operation
Awaiting results from beamtest on irradiated devices
Beam Conditions Monitoring
Application of diamond successful in BaBar, CDF
ATLAS diamond BCM installed in January 2007
Advanced Instrumentation Seminars
Sept. 5, 2007, SLAC
Diamond Detectors in High Radiation Environments (page 58) Harris Kagan
Ohio State University