Diamond Detectors in High Radiation Environments Harris ...Diamond Detectors in High Radiation Environments Harris Kagan Ohio State University Advanced Instrumentation Seminars Sept

Diamond Detectors in High RadiationEnvironments

Harris KaganOhio State University

Advanced Instrumentation SeminarsSept. 5, 2007, SLAC

Outline of the Talk

Introduction - Motivation

Diamond Properties

Radiation Hardness Studies with Trackers

Diamond Pixel Modules

Beam Monitoring

Summary

Advanced Instrumentation Seminars

Sept. 5, 2007, SLAC

Diamond Detectors in High Radiation Environments (page 1) Harris Kagan

Ohio State University

Introduction

Motivation: Tracking Devices Close to Interaction Region of Experiments

Scale is ∼ 1016 cm−2→ annual replacement of inner layers perhaps?


Sept. 5, 2007, SLAC



Introduction

Motivation: Tracking Devices Close to Interaction Region of Experiments

Look for a Material with Certain Properties:

Radiation hardness (no frequent replacements)

Low dielectric constant → low capacitance

Low leakage current → low readout noise

Good insulating properties → large active area

Room temperature operation, Fast signal collection time → no cooling

Presented Here:

Polycrystalline Chemical Vapor Deposition (pCVD) Diamond

Single Crystal Chemical Vapor Deposition (scCVD) Diamond

ATLAS pCVD Diamond Pixel Module

ATLAS scCVD Diamond Pixel Module

BaBar pCVD diamond Beam Conditions Monitoring system

CDF pCVD diamond Beam Conditions Monitoring system

ATLAS pCVD diamond Beam Conditions Monitoring system

Reference → http://rd42.web.cern.ch/RD42

Diamonds supplied by and in collaboration with Element Six Ltd.


Sept. 5, 2007, SLAC



The RD42 Collaboration

M. Barbero1, V. Bellini

2, V. Belyaev

15, E. Berdermann

8,

P. Bergonzo14

, H. Bol13

, M. Bruzzi5, V. Cindro

12, W. de

Boer13

, I. Dolenc12

, P. Dong21

, W. Dulinski10

,

V. Ermin9, R. Eusebi

7, F. Fizzotti

19, H. Frais-Kolbl

4,

A. Furgeri13

, K.K. Gan17

, A. Golubev11

, A. Gorisek3,

E. Griesmayer4, E. Grigoriev

11, F. Hartjes

16,

H. Kagan17,♦

, R. Kass17

, G. Kramberger12

,

S. Kuleshov11

, S. Lagomkarsino6, A. Lo Giudice

19,

I. Mandic12

, C. Manfredotti19

, A. Martemyanov11

,

M. Mathes1, D. Menichelli

5, S. Miglio

5, M. Mikuz

12,

M. Mishina7, S. Mueller

13, H. Pernegger

3, M. Pomorski

8,

R. Potenza2, S. Roe

3, C. Schmidt

8, S. Schnetzer

18,

T. Schreiner4, C. Schrupp

21, S. Sciortino

6, S. Smith

17,

R. Stone18

, C. Sutera2, M. Traeger

8, W. Trischuk

20,

C. Tuve2, J. Velthuis

1, E. Vittone

19, R. Wallny

21,

P. Weilhammer3,♦

, N. Wermes1

♦ Spokespersons

58 Participants

1 Universitat Bonn, Bonn, Germany2 INFN/University of Catania, Italy

3 CERN, Geneva, Switzerland4 Fachhochschule fur Wirtschaft und Technik, Wiener

Neustadt, Austria5 INFN/University of Florence, Florence, Italy

6 Department of Energetics/INFN Florence, Florence,Italy

7 FNAL, Batavia, U.S.A.8 GSI, Darmstadt, Germany

9 Ioffe Institute, St. Petersburg, Russia10 IPHC, Strasbourg, France

11 ITEP, Moscow, Russia12 Josef Stephan Institute, Ljubljana, Slovenia13 Universitat Karlsruhe, Karlsruhe, Germany

14 LETI (CEA-Technologies Avancees) DEIN/SPE -CEA Saclay, Gif-Sur-Yvette, France15 MEPHI Institute, Moscow, Russia16 NIKHEF, Amsterdam, Netherlands

17 The Ohio State University, Columbus, OH, U.S.A.18 Rutgers University, Piscataway, NJ, U.S.A.

19 Univerity of Torino, Italy20 University of Toronto, Toronto, ON, Canada

21 UCLA, Los Angeles, CA, USA

21 Institutes

Detectors in BaBar, Belle, CDF, ATLAS; planned DESY, CMS, ALICE, LHCb


Sept. 5, 2007, SLAC



CVD Diamond Properties


Sept. 5, 2007, SLAC



Introduction

Comparison of Various Materials

Property Diamond 4H-SiC Si

Band Gap [eV] 5.5 3.3 1.12Breakdown field [V/cm] 107 4×106 3×105

Resistivity [Ω-cm] > 1011 1011 2.3×105

Intrinsic Carrier Density [cm−3] < 103 1.5×1010

Electron Mobility [cm2V−1s−1] 1800 800 1350Hole Mobility [cm2V−1s−1] 1200 115 480Saturation Velocity [km/s] 220 200 82

Mass Density [g cm−3] 3.52 3.21 2.33Atomic Charge 6 14/6 14Dielectric Constant 5.7 9.7 11.9Displacement Energy [eV/atom] 43 25 13-20

Energy to create e-h pair [eV] 13 8.4 3.6Radiation Length [cm] 12.2 8.7 9.4Spec. Ionization Loss [MeV/cm] 4.69 4.28 3.21Ave. Signal Created/100 µm [e] 3600 5100 8900Ave. Signal Created/0.1% X0 [e] 4400 4400 8400

Low dielectric constant - low capacitance Large bandgap - low leakage currentLarge energy to create an eh pair - small signal


Sept. 5, 2007, SLAC



Introduction

What About Silicon?

Silicon is the standard detector material in High Energy Physics

Fast signals,

Localized ionization → position sensitivity,

Free standing → minimum dead material

But silicon has a problem with radiation

Change in material properties (effective doping)

→ higher depletion voltage or under depletion

Increase of leakage current → shot noise, thermal runaway

Increase of trapping → loss of charge

Silicon operated at E=3V/µm (1000V) Silicon operated at -20C


Sept. 5, 2007, SLAC



Introduction

Chemical Vapor Deposition (CVD) Diamond Growth:

Micro-Wave Reactor Schematic Side View of pCVD Diamond

(Courtesy of Element Six)

Diamonds are “synthesized” from a plasma

The diamond “copies” the substrate


Sept. 5, 2007, SLAC



Diamond Properties

Detectors Constructed with Diamond:

Signal formation

e-h Creation

Charged Particle

Electrodes

Diamond

Vbias

Amplifier

Schematic Side View

Q=d

tQ0 where d = collection distance = distance e-h pair move apart

d=(µeτe + µhτh)E

d=µEτ = vτ

with µ = µe + µh → v = µ Eand τ = µeτe+µhτh

µe+µh

I=Q0v

d


Sept. 5, 2007, SLAC



Properties - Polycrystalline CVD Diamond

Latest Material: pCVD Diamond Measured with a 90Sr Source

Contacts on both sides - structures from µm to cm

Usually operate at E=1V/µm

Test Procedure: dot → strip → pixel on same diamond!

h1aEntries 2000Mean -15.27RMS 268.6

Signal Size (Electrons)0 5000 10000 15000 20000 25000 30000 35000

Nu

mb

er

0

200

400

600

800

1000

1200

1400

h1aEntries 2000Mean -15.27RMS 268.6

Pedestal

Wafer3 0V - Ped, Gain Corrected

h2aEntries 2000Mean 1.134e+04RMS 5641

Signal Size (Electrons)0 5000 10000 15000 20000 25000 30000 35000

Nu

mb

er

0

20

40

60

80

100


Signal

Wafer3 Charge - Ped, Gain Corrected

QMP = 8500-9000e Mean Charge = 11300e

Source data well separated from 0 Collection Distance now ≈ 300µm Most Probable Charge now ≈ 9000e 99% of PH distribution above 4000e FWHM/MP ≈ 0.95 — Si has ≈ 0.5 This diamond available in large sizes


Sept. 5, 2007, SLAC



Properties - Polycrystalline CVD Diamond

Recent Polycrystalline CVD Diamond

Electric Field (V/mu)0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Electric Field (V/mu)0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Co

llect

ion

Dis

tan

ce (

mm

)

-0.1

-0.05

-0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

E6 Wafer 1

Left: Recent pCVD wafers ready for test - Cr/Au dots are 1 cm apartRight: Collection distance from a dot in the pCVD wafer

pCVD diamond wafers can be grown >12 cm diameter, >2 mm thickness.

Wafer collection distance now typically 250µm (edge) to 310µm (center).


Sept. 5, 2007, SLAC



Properties - Single Crystal CVD Diamond

Recently Single Crystal CVD (scCVD) Diamond has been Fabricated

RD42 has a research contract with Element Six to develop this material.

scCVD diamond can be grown ≈ 10 mm × 10mm, >1 mm thickness.

Largest scCVD diamond grown ≈ 14 mm × 14 mm.


Sept. 5, 2007, SLAC




scCVD Diamond Measured with a 90Sr Source:

Signal Size (Electrons)0 5000 10000 15000 20000 25000 30000 35000 40000

h1aEntries 2500Mean 7899RMS 4798


Nu

mb

er

0

50

100

150

200

250

h1aEntries 2500Mean 7899RMS 4798

CD168 Charge - Ped, Gain Corrected

0 5000 10000 15000 20000 25000 30000 35000 40000


0 5000 10000 15000 20000 25000 30000 35000 400000

50

100

150

200

250

300

350

400


071415 Charge - Ped, Gain Corrected




Nu

mb

er

0

20

40

60

80

100


scCVD Charge - Ped, Gain Corrected

Signal Size (electrons)0 5000 10000 15000 20000 25000 30000 35000 40000


Signal Size (electrons)0 5000 10000 15000 20000 25000 30000 35000 40000

Nu

mb

er

0

10

20

30

40

50

60

70


CD141 Charge - Ped, Gain Corrected

Pulse height spectrum of various scCVD diamonds (t=210, 320, 435, 685 µm)


Sept. 5, 2007, SLAC




scCVD Diamond Most Probable Charge versus Thickness

Thickness (mm)0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Thickness (mm)0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Mo

st P

rob

able

Ch

arg

e (E

lect

ron

s)

0

5000

10000

15000

20000

25000

scCVD Charge versus Thickness

High quality scCVD diamond can collect full charge for thickness 880µm

Width of landau distribution is ≈ 1/2 that of silicon, ≈ 1/3 that ofpCVD diamond


Sept. 5, 2007, SLAC



Diamond Properties - Comparison

HV Characteristics

High quality scCVD diamond has larger signal than pCVD diamond

High quality scCVD diamond collects all the charge at E=0.2V/µm

High quality scCVD diamond does not pump!

pCVD diamond available in larger sizes than scCVD diamond


Sept. 5, 2007, SLAC




Charge Collection Properties: Transient Current Measurements (TCT)

Measure charge carrier properties separately for electron and holes

Use α-source (Am241) to inject charge

- penetration ≈ 14 µm (thickness of diamonds ≈ 470 µm)

- use positive and negative applied voltage

Amplify ionization current

Extracted parameters: Transit time, velocity, lifetime, space charge, pulse shape, charge.

H. Pernegger, et al., “Charge-carrier Properties in Synthetic Single-crystal Diamondmeasured with the Transient-current Technique”, J. Appl. Phys. 97, 073704 (2005)


Sept. 5, 2007, SLAC




Drift Velocity and Lifetime:

Average drift velocity for electrons and holes: ve,h = d/tc

Extract µ0 and saturation velocity: v = µ0E1+µ0E/vs

For this sampleµ0e

= 1714 cm2/Vsµ0h

= 2064 cm2/Vsvse

= 0.96 × 107 cm/s = 96 km/svsh

= 1.41 × 107 cm/s = 141 km/s

From the drift velocity deduce the lifetimes > 35 ns → >> transit time so chargetrapping not the issue


Sept. 5, 2007, SLAC




Energy Resolution:

FWHM: 17keV @ 5.4MeV → spectroscopic material


Sept. 5, 2007, SLAC



Radiation Hardness


Sept. 5, 2007, SLAC



Radiation Hardness Studies with pCVD Trackers

pCVD Diamond Trackers:

Patterning the diamond → pads, strips, pixels!

Successfully made double-sided devices; could be made basically edgeless.

Use trackers in radiation studies - charge and position.


Sept. 5, 2007, SLAC




Diamond Proton Irradiation - previously:

Signal to Noise

2 strip transparent signal to single strip noise [ ]0 50 100 150 200 250

entr

ies/

bin

[1/

100]

0

100

200

300

400

500

600

700

800before irradiation

mean 57, most prob. 41FWHM 54

after 1 E15 protons/cm2

mean 49, most prob. 35FWHM 41

Diamond CDS-69 at 0.9 V/µm

after 2.2 E 15 protons/cm2

and re-metalizationmean 47, most prob. 35FWHM 36

Signal from Irradiated Diamond Tracker

Data taken over a period of 2 years Dark current decreases with fluence 15% loss of S/N at 2.2 × 1015/cm2

Resolution improves 35% at 2.2 ×

1015/cm2

Resolution

entr

ies/

2µm

[ ]

0

100

200

300

400

500

600

700

800

Residual Distributions, Proton Irradiated Diamond

Diamond CDS-69

before irradiationσ = 11.5 µm

2-strip center ofgravity method

0

200

400

600

800

1000

CDS-69

after 1E15 p/cm2

σ = 9.1 µm

residual, uh-ut, [µm]-100 -80 -60 -40 -20 0 20 40 60 80 100

0

200

400

600

800

1000

1200

CDS-69

after 2.2 E 15 p/cm2

and re-metalization

σ = 7.4 µm


Sept. 5, 2007, SLAC




Proton Irradiation - now:

Irradiation (x10^15 p/cm^2)0 5 10 15 20 25

Rel

ativ

e S

ign

al

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Preliminary Summary of Proton Irradiation

Summary of proton irradiation results for pCVD diamond at E=1V/µm andE=2V/µm (green square) after 1.8 × 1016 p/cm2 (∼500Mrad)


Sept. 5, 2007, SLAC




Proton Irradiation - Signal Charge/Noise:

Irradiation (x10^15 p/cm^2)0 2 4 6 8 10 12 14 16 18 20

Sig

nal

Ch

arg

e/N

ois

e

0

10

20

30

40

50

60

70

80

Diamond

Pixel Detector Signal to Noise

Measured in November 2006 Test Beam Diamond ATLAS pixel detector noise 140e (low C, low I) Silicon ATLAS pixel detector noise 180e 3D Silicon ATLAS pixel detector noise 310e Silicon signal less than diamond; 3D Silicon signal larger by factor of 2


Sept. 5, 2007, SLAC



pCVD and scCVD Pixel Detectors


Sept. 5, 2007, SLAC



ATLAS Diamond Pixel Detectors

Constructing a full ATLAS Diamond Pixel Module:

Various stages of making a module - Element Six (growth), OSU (metalization), IZM(carrier support, bump-bonding), Bonn (electronics, testing)


Sept. 5, 2007, SLAC




A full 16 Chip ATLAS diamond pixel module

Module tested in Bonn


Sept. 5, 2007, SLAC




The ATLAS pixel module - Bare Chip, No Detector - Noise, Threshold

Results: Bare Noise ∼ 140e, Bare Mean Threshold ∼ 1500e,Bare Threshold Spread ∼ 25e.


Sept. 5, 2007, SLAC




The full ATLAS diamond pixel module - Noise, Threshold

Results: Noise ∼ 137e, Mean Threshold 1454e, Threshold Spread ∼ 25e.Noise, threshold, threshold spread do not change from bare chip.


Sept. 5, 2007, SLAC




The full ATLAS diamond pixel module - Correlation, Resolution

Excellent correlation with telescope

Resolution dominated by 6 GeV electron multiple scattering.

Preliminary residual ∼ 17µm - includes contribution from multiple scattering.


Sept. 5, 2007, SLAC




The full ATLAS diamond pixel module - Efficiency

Efficiency0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1

effDistMapEntries 105

Mean 0.9659

RMS 0.03243

Efficiency0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1

Nu

mP

ixel

0

5

10

15

20

25

30

35effDistMap

Entries 105

Mean 0.9659

RMS 0.03243

Efficiency

Preliminary efficiency >97.5%- still need to correct tracking errors, multiple scattering.- still need better fiducial region.


Sept. 5, 2007, SLAC




Multiple Scattering - Telescope Resolution at CERN and DESY

Telescope resolution CERN ∼ 7µm; DESY ∼ 37µm.


Sept. 5, 2007, SLAC




The First scCVD ATLAS diamond pixel detector

The first device → odd shaped but looks good


Sept. 5, 2007, SLAC




The First scCVD ATLAS diamond pixel detector

The hitmap plotted for all scintillation triggers with trigger in telescope.

The raw hitmap looks goods - ∼ 1 dead pixel


Sept. 5, 2007, SLAC




The First scCVD ATLAS diamond pixel detector - Raw Position Correlation

Plot contains all scintillator triggers with “track” trigger in telescope

The pixel detector hits correlate well with the telescope hits


Sept. 5, 2007, SLAC




The First scCVD ATLAS diamond pixel detector - Raw Pulse Height

100V 400V

Use Time Over Threshold to get Pulse Height

30 TOT counts ∼ 10,000e

Two peaks: single pixel hit events (higher), multi-pixel hit events (lower)


Sept. 5, 2007, SLAC




The First scCVD ATLAS diamond pixel detector - Charge Sharing

Charge sharing as ex-pected

Cluster signal as expected Efficiency 99.98%

Cluster Signal Efficiency


Sept. 5, 2007, SLAC



Next Steps

Re-Test ATLAS Pixel Module at CERN

Done - data being looked at → Thesis

Irradiate scCVD and pCVD diamonds

pCVD to 2 × 1016 and scCVD to 2 × 1015p/cm2

Irradiate pCVD pixel modules (chip and detector)

Up to ∼ 1016

Move Metalization to Industry

Cleaner facilties

Metalization and bumping done at one facility

This should be easy ... IZM is interested

Produce 3-10 Modules

Evaluate production process

Full measure of efficiency, noise, etc.

Test of Modules

Beam test of production modules

Radiation hardness test of production modules


Sept. 5, 2007, SLAC



Beam Condition Monitoring


Sept. 5, 2007, SLAC



Beam Conditions Monitoring - BaBar, Belle, CDF, ATLAS

Motivation:

→ Radiation monitoring crucial for Si operation/abort system

→ Abort beams on large current spikes

→ Measure calibrated daily and integrated dose

Style:

DC current or Slow Readout Requires low leakage current Requires small erratic dark currents Allows simple measuring scheme

Examples: BaBar, Belle, CDF

Single Particle Counting Requires fast readout (GHz range) Requires low noise Allows timing correlations

Example: ATLAS


Sept. 5, 2007, SLAC



Beam Conditions Monitoring - BaBar

M. Bruinsma, P. Burchat, S. Curry, A. Edwards, H. Kagan, R. Kass,D. Kirkby, S. Majewski, B. Petersen

The BaBar Diamond Radiation Monitors:

→ BaBar originally used silicon PIN diodes, leakage current increases 2nA/krad

→ After 100fb−1 signal≈10nA, noise≈ 1-2µA

→ Large effort to keep working, BaBar PIN diodes (H-plane) did not last past 2005

Photo of BaBar Prototype Devices Photo of Installed BaBar Device


Sept. 5, 2007, SLAC



Beam Conditions Monitoring - BaBar

Data Taking in BaBar:

0

5

10

15

20

25

0 2500 5000 7500 10000 12500 15000 17500 20000 225000

200

400

600

800

1000

1200

1400

1600

1800

20000 2500 5000 7500 10000 12500 15000 17500 20000 22500

BE diamond current

BE:MID diode signal current (Sig 11)

LER current

Time/seconds

Dia

mon

d/D

iode

cur

rent

/nA

Time/seconds

HE

R c

urre

nt/m

A

Fast Abort Soft Abort

System operating for >4 years in BaBar and works well! Diamonds have taken over for PIN diodes in horizontal plane.


Sept. 5, 2007, SLAC



Beam Conditions Monitoring - Unresolved Issues

Diamond Current Increases as Magnetic Field Goes Off

Erratic Dark Currents! Not fully understood.


Sept. 5, 2007, SLAC



Beam Conditions Monitoring - Unresolved Issues

But They Go Away in a Magnetic Field:


Sept. 5, 2007, SLAC



Beam Conditions Monitoring - CDF

P. Dong, R. Eusebi, A. Sfyrla, R. Tesarek, W. Trischuk, R. Wallny

The CDF Diamond Radiation Monitors:

Photo of CDF Prototype Devices Photo of Installed CDF Device

The installed CDF device has thirteen diamonds

Eight inside CDF - four per side

Five outside the experiment at calibration stations near Beam LossMonitors (BLM’s)


Sept. 5, 2007, SLAC




Data Taking in CDF:

Two diamonds operating in CDF since Fall 2004.

Full system installed - June 2006!

Inside detector is the place to be by an order of magnitude!


Sept. 5, 2007, SLAC




Beam Abort in CDF:

Both diamonds respond quicker than BLM and abort signal.


Sept. 5, 2007, SLAC



Beam Conditions Monitoring - ATLAS

A. Gorisek, M. Cadabeschi, V. Cindro, I. Dolenc, E. Griesmayer,H. Frais-Kolbl, H. Kagan, M. Mikuz, H. Pernegger, S. Smith, W. Trischuk,P. Weilhammer

Idea: Time of flight measurement to distinguish collisions from background

Detectors placed at z = ± 1.9m and r = 55mm (η ∼ 4.2, ∆t = 12.3ns) Detectors must be able to withstand ∼50Mrad in 10yrs Detectors plus electronics must have excellent time resolution (∼1ns rise

time, 2-3ns pulse width, 10ns baseline restoration)


Sept. 5, 2007, SLAC



ATLAS Beam Conditions Monitoring

Design: Inside the ATLAS Beam Pipe Support Structure (BPSS)


Sept. 5, 2007, SLAC



Electronics

Frontend Amplifiers:

0 200 400 600 800 10000

0.001

0.002

0.003

0.004

signals

0

0.2

0.4

0.6

-310

background

0

2

4

6

SNR

ν(MHz)0 200 400 600 800 1000 0 200 400 600 800 1000

ν(MHz) ν(MHz)


Sept. 5, 2007, SLAC



Electronics

Mechanical Assembly:


Sept. 5, 2007, SLAC



Electronics

Backend Electronics:

NINO provides trigger Time and Time Over Threshold


Sept. 5, 2007, SLAC



System Response

MIP Pulses:

time to trigger [ns]-70 -65 -60 -55 -50 -45 -40

ou

tpu

t vo

ltag

e [V

]0

0.002

0.004

0.006

0.008

0.01Atlas BCM prototype moduledouble diamond assembly500 MHz FE electronics

1.9 ns FWHM


Sept. 5, 2007, SLAC



Beam Test Results

Testbeam Setup:


Sept. 5, 2007, SLAC



Beam Test Results

Hitmap:


Sept. 5, 2007, SLAC



Beam Test Results

Efficiency and Occupancy:


Sept. 5, 2007, SLAC



Beam Test Results

Signal and Noise:

Signal is 271 ADC counts; Noise is 20 ADC

Measured S/N = 13.5±2


Sept. 5, 2007, SLAC



Present Status

Installation:


Sept. 5, 2007, SLAC



Summary

Further Progress in Charge Collection

300 µm collection distance diamond attained in wafer growth

FWHM/MP ∼ 0.95 – Working with manufacturers to increase uniformity

Single Crystal diamonds look quite attractive for special applications

Radiation Hardness of Diamond Trackers

Using trackers allows a correlation between S/N and Resolution

With Protons:

Dark current decreases with fluence

E=1V/µm: 15% S/N loss at 2.2 × 1015/cm2, 25% signal at 1.8 × 1016/cm2

E=2V/µm: 33% signal at 1.8 × 1016/cm2

Resolution improves 35% at 2.2 × 1015/cm2

Diamond Pixel Detectors

Successfully tested a complete ATLAS module and scCVD module

Bump bonding yield ≈ 100 %

Excellent correlation between telescope and pixel data - stable operation

Awaiting results from beamtest on irradiated devices

Beam Conditions Monitoring

Application of diamond successful in BaBar, CDF

ATLAS diamond BCM installed in January 2007


Sept. 5, 2007, SLAC



Documents

Diamond Detectors in High Radiation Environments Harris ...Diamond Detectors in High Radiation Environments Harris Kagan Ohio State University Advanced Instrumentation Seminars Sept