Download pdf - AMPLIFIERS - LINEAR & POWER - CHIP€¦ · AMPLIFIERS - LINEAR & POWER - CHIP 3 HMC998A v03.0918 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC - 22 GHz Reverse Isolation vs. Temperature

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HMC998Av03.0918

GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC - 22 GHz

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.comApplication Support: Phone: 1-800-ANALOG-D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

General Description

Features

Functional DiagramThe HMC998A is a GaAs MMIC pHEMT Distributed Power Amplifier die which operates between DC and 22 GHz. The amplifier provides 14.5 dB of gain, 43 dBm output IP3 and +32.5 dBm of output power at 1 dB gain compression while requiring 500 mA quiescent current from a +15 V supply. The HMC998A exhibits a slightly positive gain slope, making it ideal for EW, ECM, Radar and test equipment applications. The HMC998A ampli-fier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

High P1dB Output Power: +32.5 dBm

High Psat Output Power: +33.5 dBm

High Gain: 14.5 dB

High Output IP3: 43 dBm

Supply Voltage: +15 V @ 500 mA

50 Ohm Matched Input/Output

Die Size: 2.98 x 1.78 x 0.1 mm

Typical Applications

The HMC998A is ideal for:

• Test Instrumentation

• Microwave Radio & VSAT

• Military & Space

• Telecom Infrastructure

• Fiber Optics

Electrical Specifications, TA = +25° C, Vdd = +15 V, Idd = 500 mA*

Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units

Frequency Range DC - 2 2 -18 18 - 22 GHz

Gain 13 15 12.5 14.5 12 14 dB

Gain Flatness ±0.15 ±0.15 ±0.15 dB

Gain Variation Over Temperature .006 .004 .009 dB/ °C

Input Return Loss 14 18 15 dB

Output Return Loss 13 16 17 dB

Output Power for 1 dB Compression (P1dB) 29.5 30.5 32.5 29.5 31.5 dBm

Saturated Output Power (Psat) 34 33.5 33 dBm

Output Third Order Intercept (IP3) 41 43 41.5 dBm

Noise Figure 8 2.5 3 dB

Supply Current(Idd) (Vdd= 10V, Vgg1= -0.6V Typ.)

500 500 500 mA

Supply Voltage 11 15 15 11 15 15 11 15 15 V

* Adjust Vgg1 between -2 to 0 V to achieve Idd = 500 mA typical.

RFOUT & VDD

RFIN

VGG1

VGG2

AC

G1

AC

G2

AC

G4

AC

G3

43

2

1

78 6

5

Product covered by one or more US and Foreign Patents: US Pat. Nos. 8,786,368; 9,425,752; Patents Pending.

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

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HMC998Av03.0918


Gain & Return Loss

Gain vs. Temperature

Low Frequency Gain & Return Loss

Gain vs. Vdd

Gain vs. Idd Input Return Loss vs. Temperature

-20

-15

-10

-5

0

5

10

15

20

0 5 10 15 20 25 30

S21 S11 S22

GAI

N (d

B)

FREQUENCY (GHz)

-20

-15

-10

-5

0

5

10

15

20

0.0001 0.001 0.01 0.1 1

S21 S11 S22

RES

PON

SE (d

B)

FREQUENCY (GHz)

8

9

10

11

12

13

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0 2 4 6 8 10 12 14 16 18 20 22

+25C +85C -55C

GAI

N (d

B)

FREQUENCY (GHz)

8

9

10

11

12

13

14

15

16

17

18

0 2 4 6 8 10 12 14 16 18 20 22

+11V+12V

+13V+14V

+15V

GAI

N (d

B)

FREQUENCY (GHz)

6

8

10

12

14

16

18

0 2 4 6 8 10 12 14 16 18 20 22

350mA400mA

450mA500mA

GAI

N (d

B)

FREQUENCY (GHz)

-20

-15

-10

-5

0

0 2 4 6 8 10 12 14 16 18 20 22

+25C +85C -55C

RET

UR

N L

OSS

(dB)

FREQUENCY (GHz)



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HMC998Av03.0918


Reverse Isolation vs. Temperature

Output Return Loss vs. Temperature

Input Return Loss vs. Vdd Input Return Loss vs. Idd

Output Return Loss vs. Vdd

Output Return Loss vs. Idd

-20

-15

-10

-5

0

0 2 4 6 8 10 12 14 16 18 20 22

+11V+12V

+13V+14V

+15V

RET

UR

N L

OSS

(dB)

FREQUENCY (GHz)

-20

-15

-10

-5

0

0 2 4 6 8 10 12 14 16 18 20 22

350mA400mA

450mA500mA

RET

UR

N L

OSS

(dB)

FREQUENCY (GHz)

-20

-15

-10

-5

0

0 2 4 6 8 10 12 14 16 18 20 22

+25C +85C -55C

RET

UR

N L

OSS

(dB)

FREQUENCY (GHz)

-20

-15

-10

-5

0

0 2 4 6 8 10 12 14 16 18 20 22

+11V+12V

+13V+14V

+15V

RET

UR

N L

OSS

(dB)

FREQUENCY (GHz)

-20

-15

-10

-5

0

0 2 4 6 8 10 12 14 16 18 20 22

350mA400mA

450mA500mA

RET

UR

N L

OSS

(dB)

FREQUENCY (GHz)

-80

-70

-60

-50

-40

-30

-20

-10

0

0 5 10 15 20 25 30

+25C +85C -55C

ISO

LATI

ON

(dB)

FREQUENCY (GHz)



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HMC998Av03.0918


Noise Figure vs. Temperature

Low Frequency P1dB vs. Temperature

Noise Figure vs. Idd

P1dB vs. Temperature

P1dB vs. Vdd P1dB vs. Idd

24

26

28

30

32

34

36

0 2 4 6 8 10 12 14 16 18 20 22

+25C +85C -55C

P1dB

(dBm

)

FREQUENCY (GHz)

24

26

28

30

32

34

36

0 2 4 6 8 10 12 14 16 18 20 22

+11V+12V

+13V+14V

+15V

P1dB

(dBm

)

FREQUENCY (GHz)

24

26

28

30

32

34

36

0 2 4 6 8 10 12 14 16 18 20 22

350mA400mA

450mA500mA

P1dB

(dBm

)

FREQUENCY (GHz)

24

26

28

30

32

34

36

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

+25C +85C -55C

P1dB

(dBm

)

FREQUENCY (GHz)

0

2

4

6

8

10

0 2 4 6 8 10 12 14 16 18 20 22

+25C +85C -55C

NO

ISE

FIG

UR

E (d

B)

FREQUENCY (GHz)

0

2

4

6

8

10

0 2 4 6 8 10 12 14 16 18 20 22

350mA400mA

450mA500mA

NO

ISE

FIG

UR

E (d

B)

FREQUENCY (GHz)



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HMC998Av03.0918


Low Frequency Psat vs. Temperature Psat vs. Temperature

Psat vs. Vdd Psat vs. Idd

Power Compression @ 2 GHz Power Compression @ 10 GHz

24

26

28

30

32

34

36

0 2 4 6 8 10 12 14 16 18 20 22

+25C +85C -55C

Psat

(dBm

)

FREQUENCY (GHz)

24

26

28

30

32

34

36

0 2 4 6 8 10 12 14 16 18 20 22

+11V+12V

+13V+14V

+15V

Psat

(dBm

)

FREQUENCY (GHz)

24

26

28

30

32

34

36

0 2 4 6 8 10 12 14 16 18 20 22

350mA400mA

450mA500mA

Psat

(dBm

)

FREQUENCY (GHz)

0

5

10

15

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30

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40

400

450

500

550

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750

800

0 4 8 12 16 20 24

Idd

Pout Gain PAE

Pout

(dBm

), G

AIN

(dB)

, PAE

(%)

Idd (mA)

INPUT POWER (dBm)

0

5

10

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40

400

450

500

550

600

650

700

750

800

0 4 8 12 16 20 24

Idd

Pout Gain PAE

Pout

(dBm

), G

AIN

(dB)

, PAE

(%)

Idd (mA)

INPUT POWER (dBm)

24

26

28

30

32

34

36

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

+25C +85C -55C

Psat

(dBm

)

FREQUENCY (GHz)



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HMC998Av03.0918


Power Compression @ 22 GHz PAE @ Psat vs. Frequency

Power Dissipation @ 85C Gain & Power vs. Vdd @ 2 GHz

Gain & Power vs. Vdd @ 10 GHz Gain & Power vs. Vdd @ 22 GHz

0

5

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40

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0 4 8 12 16 20 24

Idd

Pout Gain PAE

Pout

(dBm

), G

AIN

(dB)

, PAE

(%)

Idd (mA)

INPUT POWER (dBm)

0

5

10

15

20

25

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0 2 4 6 8 10 12 14 16 18 20 22

+25C +85C -55C

FREQUENCY (GHz)

PAE

(%)

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5.5

6

6.5

7

7.5

8

8.5

9

0 4 8 12 16 20 24

2GHz4GHz8GHz

12GHz16GHz20GHz

22GHz

POW

ER D

ISSI

PATI

ON

(W)

INPUT POWER (dBm)

10

15

20

25

30

35

11 12 13 14 15

GAIN P1dB Psat

Vdd (V)

Gai

n (d

B), P

1dB

(dBm

), Ps

at (d

Bm)

10

15

20

25

30

35

11 12 13 14 15

GAIN P1dB Psat

Vdd (V)

Gai

n (d

B), P

1dB

(dBm

), Ps

at (d

Bm)

10

15

20

25

30

35

11 12 13 14 15

GAIN P1dB Psat

Vdd (V)

Gai

n (d

B), P

1dB

(dBm

), Ps

at (d

Bm)



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HMC998Av03.0918


Gain & Power vs. Idd @ 2 GHz Gain & Power vs. Idd @ 10 GHz

Gain & Power vs. Idd @ 22 GHz

Output IP3 vs. Temperature @ Pout/Tone = +18 dBm

Low Frequency Output IP3 vs. Temperature @ Pout/Tone = +18 dBm

Output IP3 vs. Vdd @ Pout/Tone= +18 dBm

10

15

20

25

30

35

350 400 450 500

GAIN P1dB Psat

Idd (mA)

Gai

n (d

B), P

1dB

(dBm

), Ps

at (d

Bm)

10

15

20

25

30

35

350 400 450 500

GAIN P1dB Psat

Idd (mA)

Gai

n (d

B), P

1dB

(dBm

), Ps

at (d

Bm)

10

15

20

25

30

35

350 400 450 500

GAIN P1dB Psat

Idd (mA)

Gai

n (d

B), P

1dB

(dBm

), Ps

at (d

Bm)

20

25

30

35

40

45

50

0 2 4 6 8 10 12 14 16 18 20 22

+25C +85C -55C

FREQUENCY (GHz)

IP3

(dBm

)

20

25

30

35

40

45

50

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

+25C +85C -55C

IP3

(dBm

)

FREQUENCY (GHz)

20

25

30

35

40

45

50

0 2 4 6 8 10 12 14 16 18 20 22

+11V+12V

+13V+14V

+15V

FREQUENCY (GHz)

IP3

(dBm

)



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HMC998Av03.0918


Output IP3 vs. Idd @ Pout/Tone = +18 dBm Output IM3 @ Vdd = +11V

Output IM3 @ Vdd = +12V Output IM3 @ Vdd = +13V

Output IM3 @ Vdd = +14V

0

10

20

30

40

50

60

70

80

90

0 2 4 6 8 10 12 14 16 18 20 22

2GHz4GHz8GHz

12GHz16GHz20GHz

22GHz

IM3

(dBc

)

Pout/TONE (dBm)

0

10

20

30

40

50

60

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80

90

0 2 4 6 8 10 12 14 16 18 20 22

2GHz4GHz8GHz

12GHz16GHz20GHz

22GHz

IM3

(dBc

)

Pout/TONE (dBm)

0

10

20

30

40

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60

70

80

90

0 2 4 6 8 10 12 14 16 18 20 22

2GHz4GHz8GHz

12GHz16GHz20GHz

22GHz

IM3

(dBc

)

Pout/TONE (dBm)

0

10

20

30

40

50

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80

90

0 2 4 6 8 10 12 14 16 18 20 22

2GHz4GHz8GHz

12GHz16GHz20GHz

22GHz

IM3

(dBc

)

Pout/TONE (dBm)

20

25

30

35

40

45

50

0 2 4 6 8 10 12 14 16 18 20 22

350mA400mA

450mA500mA

FREQUENCY (GHz)

IP3

(dBm

)

Output IM3 @ Vdd = +15V

0

10

20

30

40

50

60

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80

90

0 2 4 6 8 10 12 14 16 18 20 22

2GHz4GHz8GHz

12GHz16GHz20GHz

22GHz

IM3

(dBc

)

Pout/TONE (dBm)



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HMC998Av03.0918


Second Harmonics vs. Temperature @ Pout = +18 dBm

Second Harmonics vs. Vdd @ Pout = +18 dBm

Second Harmonics vs. PoutOutput IP2 vs. Temperature @ Pout/Tone = +18 dBm

Output IP2 vs. Vdd @ Pout/Tone = +18 dBm

Output IP2 vs. Idd @ Pout/Tone = +18 dBm

0

10

20

30

40

50

0 4 8 12 16 20 24

+25C +85C -55C

SEC

ON

D H

ARM

ON

IC (d

Bc)

FREQUENCY(GHz)

0

10

20

30

40

50

0 4 8 12 16 20 24

+11V+12V

+13V+14V

+15V

SEC

ON

D H

ARM

ON

IC (d

Bc)

FREQUENCY(GHz)

0

10

20

30

40

50

0 4 8 12 16 20 24

+10dBm+12dBm+14dBm

+16dBm+18dBm+20dBm

+22dBm+24dBm

SEC

ON

D H

ARM

ON

IC (d

Bc)

FREQUENCY(GHz)

0

10

20

30

40

50

0 2 4 6 8 10 12 14 16 18 20 22

+25C +85C -55C

IP2

(dBm

)

FREQUENCY(GHz)

0

10

20

30

40

50

0 2 4 6 8 10 12 14 16 18 20 22

350mA400mA

450mA500mA

IP2

(dBm

)

FREQUENCY(GHz)

0

10

20

30

40

50

0 2 4 6 8 10 12 14 16 18 20 22

+11V+12V

+13V+14V

+15V

IP2

(dBm

)

FREQUENCY(GHz)



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HMC998Av03.0918


Igg1 vs. Input PowerIdd vs. Vgg1Representative of a Typical Device

-1

-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

1 3 5 7 9 11 13 15 17 19 21 23

2GHz6GHz8GHz

10GHz12GHz14GHz

16GHz18GHz22GHz

Igg1

(mA)

Input Power (dBm)

-1000

100200300400500600700800900

10001100

-1.8 -1.5 -1.2 -0.9 -0.6 -0.3

Idd(

mA)

Vgg1(V)



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HMC998Av03.0918


Absolute Maximum Ratings

ELECTROSTATIC SENSITIVE DEVICEOBSERVE HANDLING PRECAUTIONSOutline Drawing

NOTES:1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100)3. TYPICAL BOND PAD IS 0.0031 (0.079) SQUARE4. RF PADS ARE 0.0039 (0.098) X 0.0076 (0.193)5. BOND PAD METALIZATION: GOLD6. BACKSIDE METALLIZATION: GOLD7. BACKSIDE METAL IS GROUND8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS

9. OVERALL DIE SIZE IS ±.002

Die Packaging Information [1]

Standard Alternate

GP-1 (Gel Pack) [2]

[1] Refer to the “Packaging Information” section on our website for die packaging dimensions.

[2] For alternate packaging information contact Hittite Microwave Corporation.

Drain Bias Voltage (Vdd) 16V

Gate Bias Voltage (Vgg1) -3 to 0 Vdc

RF Input Power (RFIN) 27 dBm

Output Load VSWR 7:1

Continuous Pdiss (T= 85 °C)(derate 113.6 mW/°C above 85 °C)

8.8W

Storage Temperature -65 to 150 °C

Operating Temperature -55 to 85 °C

ESD Sensitivity (HBM) Passed 250V Class1A

Channel Temperature 175 °C

Nominal Channel Temperature(T=85 °C, Vdd = 15V)

161.5 °C

Thermal Resistance (channel to die bottom)

10.2 °C/W

Reliability Information

Stresses at or above those listed in the Absolute Maximum

Ratings may cause permanent damage to the product. This

is a stress rating only, functional operation of the product

at these or any other conditions above those indicated in

the operational section of this specification is not implied.

Operation beyond the maximum operating condition for

extended periods may affect product reliability.

1

2

3 4

5

678.0040"

[0.101]

.1173"[2.980]

.0034"[0.086]

.0701"[1.780]

.0049" [0.124]

.0074"[0.188]

.0353"[0.896]

.0074"[0.189]

.0682"[1.732]

.0074"[0.188]

.0053"[0.135]

.0074" [0.188]

.0107"[0.272]

.0107"[0.272]

.0050"[0.127]

.0257"[0.652]

.0021"[0.054]

.0058"[0.147]

.0004"[0.010]

.0056"[0.141]

.0215"[0.545]

.0004"[0.010]

.0190"[0.482]

.0057"[0.146]

.0192"[0.489]

.0843"[2.142]

.0066"[0.167]

AIR BRIDGE

.0447"[1.135]

.0039" [0.098]

.0501"[1.271]

NC

NC

NC

NC

NC

NC

NC

NC



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HMC998Av03.0918


Pad DescriptionsPad Number Function Description Interface Schematic

1 RFINThis pad is DC coupled and matched

to 50 Ohms. Blocking capacitor is required.

2 VGG2

Gate 2 for amplifier. Attach bypass capacitors per application circuit herein. Typical opera-tion has VGG2 set internal to IC. Setting VGG2 to 9.5v

externally can improve thermal resistance.

3 ACG1Low frequency termination. Attach bypass

capacitor per application circuit herein.

4 ACG2Low frequency termination. Attach bypass capacitors per application circuit herein.

5 RFOUT & VDDRF output for amplifier. Connect DC bias (Vdd) network

to provide drain current (Idd). See application circuit herein.

6 ACG3Low frequency termination. Attach bypass capacitors per application circuit herein.

7 ACG4Low frequency termination. Attach bypass

capacitor per application circuit herein.

8 VGG1

Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please

follow “MMIC Amplifier Biasing Procedure” application note.

Die Bottom GND Die bottom must be connected to RF/DC ground.



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HMC998Av03.0918


Application Circuit

NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee having low series resistance and capable of providing 1000 mA.

NOTE 2: Optional capacitors to be used if part is operated below 200 MHz.

NOTE 3: Optional capacitors to be used if external VGG2 is applied. Typical operation has VGG2 set internal to IC. Setting VGG2 to 9.5V externally can improve thermal resistace and will require capacitors as shown.



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HMC998Av03.0918


Assembly Diagram



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HMC998Av03.0918


Mounting & Bonding Techniques for Millimeterwave GaAs MMICsThe die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accom-plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).

Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).

Handling PrecautionsFollow these precautions to avoid permanent damage.

Storage: All bare die are placed in either Waffle or Gel based ESD pro-tective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.

Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.

Static Sensitivity: Follow ESD precautions to protect against ESD strikes.

Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.

General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.

MountingThe chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat.

Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.

Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire BondingRF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).

0.102mm (0.004”) Thick GaAs MMIC

Wire Bond

RF Ground Plane

0.127mm (0.005”) Thick AluminaThin Film Substrate

0.076mm(0.003”)

Figure 1.

0.102mm (0.004”) Thick GaAs MMIC

Wire Bond

RF Ground Plane

0.254mm (0.010”) Thick AluminaThin Film Substrate

0.076mm(0.003”)

Figure 2.

0.150mm (0.005”) ThickMoly Tab



AM

PLI

FIE

RS

- L

INE

AR

& P

OW

ER

- C

HIP

16

HMC998Av03.0918


Notes: