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Tohru Mogami Photonics Electronics Technology Research Association (PETRA), Japan WIMNACT39 TITECH 7/Feb/2014 Copyright 2013 PETRA Optical Interconnect and Silicon Photonics WIMNACT39, TITECH, 7/Feb/2014 1

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Page 1: WIMNACT39 TITECH 7/Feb/2014 Optical Interconnect and Silicon … · 2014. 2. 10. · Network 10pA/Tr 1nA/Tr 100nA/Tr 1 GHz 100 MHz 10 GHz Digital AV Mobile Phone Mobile Computing

Tohru Mogami

Photonics Electronics Technology Research Association (PETRA),

Japan

WIMNACT39

TITECH

7/Feb/2014

Copyright 2013 PETRA

Optical Interconnect

and

Silicon Photonics

WIMNACT39, TITECH, 7/Feb/2014 1

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Outline

Copyright 2013 PETRA

1. What is the issues of ICT world?

2. What is silicon photonics?

3. New Photonics Project

4. Summary

WIMNACT39, TITECH, 7/Feb/2014 2

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Copyright 2013 PETRA3

Digital electronics innovation has changed the world and our societies.

This innovation has brought them the ICT revolution by using the advanced computer systems, the computer network, Internet, and consumer electronics, since 1970’s.

This is mainly based on the Si-LSI’s development.

Digital Electronics Innovation

Mobile phone

Digital

Video

i-phone

i-pad

1970 1980 1990 2000 2010 2020

Note-PC

Walkman

PC6000

Super-computer

i-pod

Mobile

phone

Main flame10 Peta(1015)

Flops

35 Tera(1012)

Flops

What’s next?

• Exa-Flops SC

• 8K TV

• Friendly

tablet/phone

WIMNACT39, TITECH, 7/Feb/2014 3

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Copyright 2013 PETRA

Information Explosion

1.2 ZB2010

Source; IEICE vol.94, no.8, 2011

Pa

pe

r

Pri

nti

ng

Te

lep

ho

ne

Co

mp

ute

r

Inte

rne

t

Ca

ve

pa

inti

ng

The amount of the “Information” which circulates in the world has

been expanding more than twice in 2 year since 2006.

In 2010, the amount of the Information exceeding ZB (Zetta Byte)

was created in one year.

This mainly comes from the Internet spread and especially picture

information, such as digital camera, smart-phone.

Info-Plosion Projectstarted in 2006.

(Exa: 1018)

(Zetta: 1021)

The amount of 1 tera-byte is equal to the information of 1000-year newspapers.

The amount of 1 zetta-byte is equal to that of 1 million-year newspapers.

4WIMNACT39, TITECH, 7/Feb/2014

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Copyright 2013 PETRA

Stand-by Leakage Current

Sys

tem

Clo

ck

(H

z)

Network

10pA/Tr 100nA/Tr1nA/Tr

1

GHz

100

MHz

10

GHz

Digital AV

Mobile Phone

Mobile

Computing

High-performance

Server

100fA/Tr

To handle and control a lot of information, we need more

high-performance LSI’s.

Digital electronic system and the Internet of Things need

a variety of Si-LSI’s according to its applications.

Future digital society requires more highly functional LSI’s

for a lot of applications.

Need More Innovation

5WIMNACT39, TITECH, 7/Feb/2014

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Copyright 2013 PETRA

I. A. Young, et al., IEEE Communications Magazine, 48, 184-191 (2010)

What is bottleneck of LSI’s?

Bottleneck of LSI’s can be a bandwidth between chip-to-chip,

because effective bandwidth has been increasing by 2x performance

per 2 years and Tera-scale communication is required until 2015.

Both Scaling and performance are the challenge of the conventional

Cu/Low-k and assembling tech. We need new concept.

6WIMNACT39, TITECH, 7/Feb/2014

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Outline

Copyright 2013 PETRA

1. What is the issues of ICT world?

2. What is silicon photonics?

3. New Photonics Project

4. Summary

7WIMNACT39, TITECH, 7/Feb/2014

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Copyright 2013 PETRA8 8

Si Photonics

OE device (photo-detector)

I/O device with low-loss

Wave Guide

EO device (modulator)

To realize the photonics-electronics convergence system, Si

photonics is important.

Silicon photonics is the technology to integrate photonic systems

which mainly use silicon as optical devices. The silicon is usually

patterned with nano-meter lithography, into microphotonic

devices.

Modulator is a conversion device from electrical signal to optical

one.

Photo-detector is a conversion device from optical to electrical.

Wave guide is a optical signal line to connect photonics devices

and systems.

WIMNACT39, TITECH, 7/Feb/2014 8

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100

10-1

10-2

10-3

Ab

so

rptio

n C

oe

ffic

ien

ts, α

(cm

-1)

1.1 1.2 1.3 1.4 1.5 1.6Wavelength (μm)

O b

an

d

E b

an

d

S b

an

d

C b

and

L b

an

d

Absorption Cofficient

Transparent for l>1.2μm

3.50

3.45

3.40

3.55

Refractive Index

Higher index than silica (~1.4)

Refr

active I

ndex

Properties of Silicon in IR region

Merit of silicon as waveguide media;Size down of optical circuits by confinement effect due to higher refractive index.

Copyright 2013 PETRA

T. Horikawa, FOE2013

9WIMNACT39, TITECH, 7/Feb/2014

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Lower crad

Upper crad

Si substrate

Si waveguide

2μm

No mode exist 1.5

2.0

2.5

3.0

1.0200 300 400 500 600

E

M

Light propagation in silicon

Effect

ive I

ndex

Waveguide Width (nm)

Optical field extends to crad around Si waveguide

・Optical field extention to cradmeans that effective index is an important parameter.・Effective index depends on

waveguide width.

・Only lowest mode can propagate for narrower waveguide width.

Copyright 2013 PETRA

T. Horikawa, FOE2013

10WIMNACT39, TITECH, 7/Feb/2014

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1. SOI Wafer

SiO2

Si

Si 基板

SiO2

Si

Si 基板

SiO2

Si

Si 基板

レジスト

SiO2

Si

Si 基板

SiO2

Si

Si 基板

レジスト

SiO2

Si コア

Si 基板

SiO2

Si コア

Si 基板

2. Si Patterning 3. Si Etching 4. SiO2 Deposition

SiO2

Si コア

SiO2

Si 基板

SiO2

Si コア

SiO2

Si 基板

Si Core

SiO2 Crad

Waveguide by CMOS Technology

Si waveguide is made from SOI(Si on

Insulator) layer by dry etching

Low cost and highly reproducible fabrication by using CMOS process technology

Copyright 2013 PETRA

T. Horikawa, FOE2013

11WIMNACT39, TITECH, 7/Feb/2014

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0.1

0.01

0.001

0.00011017 1018 1019 1020

Refr

active I

ndex C

hange

Carrier Density (cm-3)

Optical Modulator

Phase shift by Index Modulation

Carrier injection(e-, h+) causesIndex change

i-SiN-Si P-Si

e- h+

Electric

Signal

Electrical/Optical Conversion

Copyright 2013 PETRA

T. Horikawa, FOE2013

12WIMNACT39, TITECH, 7/Feb/2014

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100

10-1

10-2

10-3Absorp

tion C

oeffic

ient, α

(cm

-1)

1.0 1.2 1.4 1.6Wavelength (μm)

1.8

104

103

102

101

Ge

Si

O b

an

d

E b

an

d

S b

an

dC

ba

nd

L b

and i-Ge

N-Ge P-Gee-h+

Absorption of signal lighthappens in Ge film

Photocurrent due to Photovoltaic Effect

Sensitivity of Ge is larger

than Si for IR region.Ge

SOI

BOX

Si sub.

SiO2Al

Si cap

1mm

Optical/Electrical Conversion

Photo-detector

Copyright 2013 PETRA

T. Horikawa, FOE2013

13WIMNACT39, TITECH, 7/Feb/2014

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Outline

Copyright 2013 PETRA

1. What is the issues?

2. What is silicon photonics?

3. New Photonics Project

4. Summary

14WIMNACT39, TITECH, 7/Feb/2014

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Copyright 2013 PETRA

New National Projects, which are Future Pioneering Pj’s (FPP), have

started since 2012.

New direction of FPP

• Constructed for better social life and industry activation

New scheme of FPP

• Constructed for commercialization based on R&D results

Long-term

Budgets

for high-risk targets

Dream team

for

commercialization

Collaboration

b/w

Ministries and

Cabinet Office

New Scheme

Disruptive tech.

for social impact

Strategic

Execution

Core tech.

by Japan

New Direction

Along this direction, PJ target can

be selected & development can

be advanced.

Along this scheme, both R&D and

commercialization can be advanced.

Future Pioneering Projects

15WIMNACT39, TITECH, 7/Feb/2014

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Comp. AXx production

Copyright 2013 PETRA

Future Pioneering Projects

New Projects from 2012

• Photonics Electronics Convergence Technology For Power-

Reducing Jisso System Project

by collaboration b/w METI and CAO

• Project on Magnetic Materials for High-efficiency Motors

by collaboration b/w METI and MEXT

• Artificial Photosynthetic Chemical Process Project

by collaboration b/w METI and MEXT

Joint ventureZz production

Comp. B

Comp. D

Comp. C

Comp. A

PROUniv.

E

Univ. F

Basic Research (by other Ministries and Cabinet Office budget)

Comp. C

Comp. A

Univ. E

ConsortiumYy production

Target

SelectionCommer-

cializationR&D for commercialization (by METI budget)

collaboration

support

PRO

16WIMNACT39, TITECH, 7/Feb/2014

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Copyright 2013 PETRA

Outline

Project Leader : Yasuhiko Arakawa, Professor of the University of

Tokyo

Term: FY 2012~2021

Sponsor: METI for FY2012, NEDO from FY2013.

Organization: PETRA

Member companies:

AIST, Fujitsu, Furukawa Electric, NEC, NEL, NTT, OITDA, OKI,

Toshiba

Joint research organization:

Univ. of Tokyo, Kyoto Univ., Tokyo Institute of Technology,

Yokohama National Univ., WASEDA Univ.

By developing optical wiring and optical devices, we realize

photonics electronics convergence tech. and this leads to power-

reduction, high-performance, and small form factor for electronics

components, and significantly reduction of their power consumption.

17WIMNACT39, TITECH, 7/Feb/2014

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Copyright 2013 PETRA

5cm

Next generation

server board

Photonics electronics

convergence interposer

50cm

Optical waveguides

between chips

LSI

Rack-mounted server Photonics electronics

convergence server

Optical wiring

on board

Objective

Promote creation of new functions from integration and packaging

of key tech’s which take advantages of characteristics of optical

circuits to realize downsizing and power-reduction of ICT equipment,

and prove effectiveness of optical wiring at system level as a

forerunner and target to achieve its commercialization.

18WIMNACT39, TITECH, 7/Feb/2014

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Copyright 2013 PETRA

2012 2014 2018 2020 2022

0.1T

0.3T

1T

10T

3T

Sy

stem

per

form

an

ce

1st stage 2nd stage 3rd stage

(bps)

Interposer w/

Photonics

Electronics

IntegrationLSI package w/

Optical cableOptical I/O

Core

AOC LSI & Package Server on package

Year

Project Roadmap

10 years are divided 3 stages.

1st stage: Develop optical IO core for key tech. and AOC for system

tech.

2nd stage: Develop LSI package with optical IO cores and LSI with

optical fiber cables.

3rd stage: Develop photonics

electronics convergence

interposer and photonics

electronics printed-circuit

board.

The 1st chip will be exhibited

next year.

This project target is to

reduce the size of current

server rack equipment to a

board size and reduce 30%

of its power consumption.

Key tech.

System tech.

19WIMNACT39, TITECH, 7/Feb/2014

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Copyright 2013 PETRA

Summary

For ICT systems, one of today’s bottlenecks is the

bandwidth b/w LSI’s.

Optical interconnect has the wide bandwidth

characteristic as interconnect advantages.

Silicon photonics is the technology to integrate photonic

systems which mainly use silicon as optical devices.

“Photonics Electronics Convergence Technology For

Power-Reducing Jisso System” Project is one of Future

Pioneering Projects (FPP).

New project’s objective is to promote creation of new

functions from integration and packaging of the

advanced Si photonics tech’s and prove effectiveness

of optical wiring at system level.

The 1st chip will be exhibited this year.

20WIMNACT39, TITECH, 7/Feb/2014

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Copyright 2013 PETRA

Acknowledgements

This work is partly supported by NEDO.

21WIMNACT39, TITECH, 7/Feb/2014