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• Fast3Dstructureprototypingcapabilityenablesthein-depthphysicalanalysisofspecificprocessingissues
• Supportsdoublesidewaferprocessingsimulation
• Comprehensivesimulationsupportforcompoundmaterials,includingvariablecompositions
• Comprehensivesetofdiffusionmodels:Fermi,twodim,single-pair,andfive-stream
• Comprehensivefullflowstressanalysis,includingstressinducedbylatticemismatch,thermalmismatch,depositionandphysicaloxidation
• ExtremelyaccurateandfastMonteCarloimplantsimulation
• Efficientmulti-threadingoftimecriticaloperationsofimplantation,diffusion,oxidation,andphysicaletchinganddeposition
• Multi-particlefluxmodelsforphysicaldepositionandetchingwithsubstratematerialredeposition
• Openarchitectureallowseasyintroductionandmodificationofcustomerspecificphysicalmodelsforetching,depositionandannealing
• Seamlesslinkto3Ddevicesimulatorsincludingstructuremirroring,adaptivedopingrefinementandelectrodespecification
• Parametrizedlayoutspecificationaspartofthesimulationflow
• Convenientmeshspecificationbasedonlayoutfeaturesaswellasmanualmeshadaptationwithinthesimulationflow
• Easytolearn,powerfuldebugmodeanduserfriendlySUPREM-likesyntax(Athenacompatibility)
• Convenientcalibrationplatformandfastprocesstestingwith2Dmode(noneedtorun3Dforcalibration)
Victory Process is a general purpose layout driven 1D, 2D and 3D process and stress simulator including etching, deposition, implantation, diffusion, oxidation and stress simulation capabilities.
Victory Process
3D Process Simulator
• Automaticswitchingfrom1D,2Dand3Dmodeaswellasstructuremirroringduringprocesssimulationtooptimizesimulationtime
VictoryProcesshastwomodesofoperation:• TheAdvancedstructureeditor mode, also called cell mode, is for fast proto-typing of 3D structures, such as image sensors, SRAM cellsorFinFETs,wherestructureoutputmeshingalgorithmsareoptimizedforloadinginto3Ddevicesimulatorsforsubsequentelectricalcharacterization.
• Processsimulatormode, is a full feature, level set based 1D, 2D and 3D process and stress simulator, more suited to process based analysis, such as complex ion beam milling experiments and stress dependent oxidation analysis etc.
Thisbrochurefirstshowsexamplesandfeaturesthatarecommontobothmodesofoperation,suchasimplantation,diffusion,epitaxyand stress analysis and then describes features that are exclusive only to the advanced structure editor mode or to the advanced process simulator mode.
Features Common to Advanced Structure Editor and Process Simulator ModesComprehensiveLayoutHandling
• Specificationoflayoutswithinthesimulationflowwithacomprehensivesetofprimitives,enablescomplexparametrizedlayouts
• HandlespredefinedlayoutsingdsaswellasSILVACOnativemaskformat• Allowsmodificationofpredefinedlayouts(shift,resizeandbooleanoperations)
MaskfeaturescreatedwithintheinputdeckofVictoryProcess.
Booleanoperationsofmasklayersbymeansoftheinputdeck. Transformationofmasklayersbymeansoftheinputdeck.
StressHistorySimulation
• Simulationofthefullstresshistoryofallprocessingstepsbutalsoallowsforsinglestepstressanalysis• Accountsformultipleprocessinginducedstresssourcesincludingdepositioninducedintrinsicstress,
lattice mismatch stress, thermal mismatch stress and oxidation induced stress• Accountsforstressfeedbackonoxidation• Handlesgradedcompoundsubstratesaswellasgradedepitaxalcompoundlayers
Geometryandstressprofileofa3DFinFETinvertercell.
AnalyticalIonImplantation
• ExperimentallyverifiedPearsonanddualPearsonimplantmodels• Extendedimplantmomentstableswithenergy,dose,tilt,androtationvariations• Supportforuserspecificimplantationprofilesaswellasmomenttables• Fullymulti-threadedwithruntimereductionalmostlinearly proportionalwith number ofCPUs
MonteCarloImplantation
• Veryaccurateiondistributionsinbothcrystallineandamorphousmaterialsformingarbitrarygeometriesand multi-layer structures
• Accuratelycalibratedforwiderangeofenergiesstartingaslowas200eVandspanningtothehighMeVrange
• Accountsforallcompleximplantationeffectssuchasreflections,re-implantationandshadowingevenindeep trenches and voids
• Handlesarbitraryimplantdirections
• Applies3Dbinarycollisionapproximationwhichpredictschannelingnotonlyintoprimarychannelbutinall possible secondary channels and crystallographic planes
• Providestimeefficientandcosteffectivesolutionsforimportanttechnologyissuessuchasshallowjunctionformation,multipleimplantsandpre-amorphization,HALOimplants,retrogradewellformation,andwellproximityeffect
• Fullymulti-threadedwithruntimereductionalmostlinearlyproportionalwithnumberofCPUs
Implantattilt50degreesandtwistalongstructure’sdiagonal.5milliontrajectoriescanbesimulatedinafewminutesonan8
core machine.
Implantattilt50degreesandtwistalongstructure’sdiagonal.Allgeometricaleffectsaretakenintoaccount.
Diffusion • FermiandTwodimdiffusionmodelcompatiblewithAthena/SSuprem4• Fickdiffusionmodelfornon-semiconductormaterials• Simulationofmultipledopantdiffusion• Accountsforsolidsolubility,dopantactivation,andsegregationatmaterialinterfaces• Fullymulti-threadedequationassemblerandlinearsolverprovidesubstantialspeedimprovementon
multi-core computers• Simulationoftransientenhanceddiffusioneffects• Three-streamandfive-streamdiffusionmodels• Pointdefecttrappingandclusteringmodels• Impuritysegregationatallmaterialinterfaces• Impurityactivationandsolidsolubility• DiffusionincompoundsemiconductorslikeHgCdTe,InP,SiGe,SiGeCtakingintoaccountcomposition
dependencies• Simulationofthere-distributionofthematerialcompositionincompoundsemiconductorslikeHgCdTe• Discontinousmaterialinterfacemodelforheterostructuredevices• Simulationofoxidationmediateddiffusion• Simulationofflashannealingaswellaslaserannealingwithuserdefinedtemperatureprofileswhich
can vary in time and space.
Boron distribution in a complex structure after analytical implant and Fermi diffusion. ComparisonofFermiand3-streamdiffusionmodelin the presence of interstitial super-saturation.
Re-distributionoftheHgCdTecompositionduetoannealingatvarioustemperatures-CadmiumandMercuryaswellas the dopants are diffusing simultaneously.
Epitaxy
OpenMaterialDatabase
• Epitaxialgrowthofsingleatomicaswellascompoundmaterial• Accountsfordopingre-distributionduringepitaxy• Handlesgradedcompositionduringepitaxy• Supportforcomplextemperatureprofiles
• Fullaccesstoallmaterialandmodelingdata• Supportsuserspecificmaterialdatabasesandwellassimulationspecificmaterialdatabases• Definitionofsimulationspecificmaterialsbyinteritance• Functionallayerofthematerialdatabaseenablesconvenientmodificationaswellasextensionof
material models• Interfacetoopenannealingmodellibraryforadvancedmaterialmodeldevelopment• AllVictoryProductsshareonematerialdatabase
OpenModelingInterfaceCapabilities
• Definitionofmodelspecies• Definitionofmodelparameters• Definitionofreactionfunctions• ConfigurationofthePDEsystem
DeviceMeshingInterface
• Supportforvariousmeshtypes• Extensiverefinementcapabilitiesforallmeshtypesincludingglobalrefinement,interfacerefinement,junctionrefinement,shaperefinement
• Supportsaspectratioalignedan-isotropicmeshing• Structuremodificationbymirroring,croppingandslicingoperations
Advanced Structure Editor Mode
FastGeometricalEtchandDeposition
• Unstructuredmeshtorepresentthestructure• Idealizedisotropicanddryetchingandplanarization• Selectiveetchingorremovalofmaterialsregions• Idealizedconformalanddirectionaldeposition• MaskLayout-basedProcessing-JustlikeinaFab
Optical–CIS,CCD,SolarCells
Amongthemanydesigncriteriaforsolarcells,thedesignofthetopmetalcontactimpactsthecellefficiency.Thearealdensityofthetopcontactmodifiesthemagnitudeofthecelloutputpowersignificantly.
Acceptor3.4e17/cm3isosurfacebeneaththehexagon metal contacts.
Adaptive 3D Delaunay mesh used for the solar cell simulation.
Largestandsmallesthexagongridtopcontactforthe1mm2Siliconsolarcellinvestigatedinthisstudy.
Solarcellefficiencywiththeredtraceforthesmallesthexa-gons(circumcircleradiusorsidelengthaof104μm),green(a=225μm)andblueforthelargesthexagon(a=945μm)
Showingtherelationshipbetweenthemaximumoutputpowerand the metal coverage ration R.
FinFETExample 3DFinFETsimulatedincludingquantumcorrectionandenergybalance.
3DFinFETnetdopingdistribution.
IDVGcharacteristics,simulatedusingVictoryDevice,showingthedifferencewhenenergybalanceand
quantumcorrectionareused.
IDVDcharacteristics,simulatedusingVictoryDevice,showingthedifferencewhenenergybalanceand
quantumcorrectionareused.
SiCTrenchIGBTExample
3DtrenchSiCIGBTsimulationshowsa~350Vincreaseinbreakdownvoltageforaroundededgetrenchwhencompared to a sharp edge trench.
Electricfielddistributionina3DIGBT withsharpedgetrench.
Electricfielddistributionina3DIGBT withroundededgetrench.
ComparisonusingVictoryDeviceof3DIGBTBVsimulationresultswithsharpandrounded
trench edges.
3D Mixed mode short circuit simulation including thermal effect.
Electron current density distribution at device failure pointt=5.57μs.
Short-circuitwaveformsforthe3D8-cellIGBTarraywithawidthof40μm.
Short-circuitwaveformsforthequasi-3D8-cellIGBTarraywithawidthof1μm(b)Cross-sectionalviewsofspatialevolutionof
electron current density for selected points in time shortly before device burn-out.
3DCurrentCrowdinginMultipleCellsIGBT
3DTCADMixed-ModesimulationofcurrentfilamentsinIGBTmulticellarrayundershort-circuitcondition.
CMOSImageSensorExample
TCADsimulationofthefullCMOSimagesensorcell,includingtwopasstransistors.
3DNetDopingdistributionina3DCMOSImageSensor.
ComparisonofsensoroutputvoltagesimulationusingVictoryDevicewithoutandunderillumination.
Electron concentration calculated using Victory Device during darkrecoverytimesimulation.
CMOSImagesensorlayout.
OxidationModels• Oxidationcanbesimulatedinempirical,fullphysical,orhybridmode• Empiricalmodeisappliedforverythinoxidationlayers• Deal-GroveandMassoudmodelsareusedinempiricalmode• Fullphysicalmodesimulatesoxidanttransport,reactiononSi/SiO2interface,viscousflow,material
deformation, and stress formation• Automaticswitchingbetweenempiricalandfullphysicalmodedependingonoxidethickness• Empiricalmodeisusedinplanarregionswithcoarsemeshallowinglayerthicknessessmallerthanmeshsizetoberesolved
• Fullphysicalmodeisusedinregionswithfinemesh• Stressdependentoxygentransportandinterfacereaction• Accountsfororientationdependence,dopingdependenceandambientconditions• Fullymulti-threadedwithruntimereductionalmostlinearlyproportionalwithnumberofCPUs• OxidationofcompoundsemiconductorslikeSiGealsoinheterostructuredevices
Process Simulator ModeInprocessmode,thestructureisrepresentedimplicitly,asastackofmateriallayers“sandwiched”betweensurfaces,eachsurfacedefinedimplicitlyonthehierarchyofCartesianmeshes.
STIlineroxidation
Simulationisstableforcomplexstructures(Multi-layerconcept).
Withoutstress:localoxidationofaquartersectionofaninvertedpyramid shape using the default linear viscous model.
With stress: non-linear oxidation of the inverted pyramid section takingintoaccountstressdependentreactionanddiffusion.
Stress occurs in corner regions. Retardation of the oxide growthduetostressbecomesmoresignificantclosertothe
apex due to the convergence of the corners.
Bufferedfieldoxidation
PhysicalEtch
PhysicalEtchingandDepositionModulecontainsacomprehensivesetofmodelscoveringawidevarietyoftopologyevolutionprocessesused in semiconductor fabrication and in hard coating for media and tribological applications.
• Selectiveetching• Isotropic,anisotropic,anddirectionaletching• Crystalorientationdependentanisotropicetching(e.g.,siliconinKOH)• Plasmaetchingwithmaterialredeposition• Accountsforparticletransporteffectsandparticleandreactorproperties• Multi-particleetchingmodelslikeionenhancedchemicaletchingfordeeptrenchetchinginmemory
technology• Fullymulti-threadedparticlefluxcalculationswithruntimereductionalmostlinearlyproportionalwithnumberofCPUs
OpenModelInterfaceCapabilities
IonMilling(IM)andIonBeamDeposition(IBD)
• Staticandrotatingbeams• Selectiveswitchingofrotatingbeamsonandoffincludingredepositionofmultiplealloymaterials• Highlycollimatedanddivergentbeamsforionbeametchingandionbeamdeposition• Capabilitytosimulatere-depositoneffects• Configurablematerialspecificyieldfunctionsandre-emissionefficiencies• Accountsforshadingeffects• Empiricalyieldmodeltakingintoaccountprocessingconditionslikeionenergy,beamcurrent,ionmass,ioncharge
• Userdefinablemodelsforetchrates,conformity,anisotropy,andstickingcoefficients• Userspecifiedtechnologicalmodels(e.g.,etchrateversusgasflow)• Userdefinablesurfacereactionmodels• Userdefinableparticletransportcharacteristicsthroughfluxmodels• Allmodelsaccountforballistictransport• Automaticselectionoftransportmode• Transportandreactionofmultipleparticles
PhysicalDeposit • Conformal,non-conformal,anddirectionaldeposition• Sputterdeposition• Ionassistedsputterdeposition• Accountsforparticletransporteffects• Fully multi-threadedparticlefluxcalculationswithruntimereductionalmostlinearlyproportionalwithnumberofCPUs
Resultofionmillingsimulationwithredeposition.
Bosch process etchcycle:7secondsdepositioncycle:5seconds28cycleshavebeensimulated
Highaspectration(1:30)trenchetchingwiththeionenhancedchemicaletching(IECE)model.
1Dand2Dsimulationcapabilitiesareavailableinprocessmode.CanbeconsideredasadirectreplacementforAthena,withmostlycompatiblesyntaxforlegacyinputfileconversion.
1Dand2DMode • VerysimilarsyntaxallowseasymigrationfromAthenaandT-Suprem• AutomatedinputdeckconversionwithinDeckbuild• Level-setbasedetch,depositandoxidation,improvesstabilityforcomplexstructureshapes• 1D/2Dsimulationallowsquickcalibrationandprocessprototypingbeforefull3Dsimulation• Openmodelinginterfaceandmaterialdatabaseallowcustommodeldevelopmentforstandardandnew
materials and dopants• SeamlesslinktoAtlasandVictoryDevice• Multi-threading for most time consuming process steps
28nmMOSFETexample
3DVerticalLOCOSPowerMOSFET
This example demonstrates 2D process simulation for 28nm NMOS transistor with STI (Shallow TrenchIsolation).ThegoalofthisexampleistodemonstratesgenericcompatibilitywithAthena.
Thisexampleshowsa3DcurvedcornerverticalLOCOSMOSpowerdevicecreatedbyasimplifiedprocessflowinVictoryProcess.ThestructureisthenexportedtoVictoryDeviceforelectricalsimulation.
2Dprocesssimulationresultsafter20processstepsincludingetching,deposition,ionimplantationanddiffusion/oxidation.
GeometryoftheverticalMOSFET. Impactionizationratenearbreakdown. IVcurveuptobreakdown.
HEAdquArtErS
4701 Patrick Henry drive, Bldg. 2
Santa Clara, CA 95054 uSA
Phone: 408-567-1000
Fax: 408-496-6080
JAPAn [email protected]
EurOPE [email protected]
KOrEA [email protected]
tAiwAn [email protected]
SingAPOrE [email protected]
CAliFOrniA [email protected]
408-567-1000
MASSACHuSEttS [email protected]
978-323-7901
tExAS [email protected]
512-418-2929
WWW.SILVACO.COMRev031616_19
Victory ProcessMaskLayout
InputDeck
OpenModelFiles
OpenMaterialDatabase SimulationStatus
Victory Process inputs/OutputsRun-timeOutput
ExtractionFile
StructureFiles(.str)