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LOGO Ultralow-Power Design in Near-Threshold Region Prof. : M. Shams Name: Yiqi Chang Student #:6624968

Ultralow-Power Design in Near-Threshold Region

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Ultralow-Power Design in Near-Threshold Region. Prof. : M. Shams Name: Yiqi Chang Student #:6624968. 5. 6. 1. 2. 3. 4. 7. Sense-Amplifier-Based PTL (SAPTL). Introduction. Device and Circuit model. Sensitivity Analysis. Energy-Delay Optimization. Architectural Optimization. - PowerPoint PPT Presentation

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Page 1: Ultralow-Power Design in Near-Threshold Region

LOGOUltralow-Power Design inNear-Threshold Region

Prof. : M. Shams

Name: Yiqi Chang

Student #:6624968

Page 2: Ultralow-Power Design in Near-Threshold Region

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Outline

Introduction1

Device and Circuit model2

Sensitivity Analysis3

Energy-Delay Optimization4

Sense-Amplifier-Based PTL (SAPTL)5

Architectural Optimization6

Conclusion7

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Introduction

Question:

Why we need ultralow power?

What is near-threshold region?

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Introduction

Past five years

minimum-energy point

(MEP)

Traditional

minimum-delayoperational point (MDP)

Optimization logic circuit

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Introduction

Fig. 1. pareto-optimal design curveEnergy-delay trade-off in combinational logic.

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Introduction

Use minimum-energy point

Voltage-based optimization

Various architectural techniques

Ultralow power Ultralow power designdesign

Method to get ultralow power

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Device and Circuit model

Current model:Current of starting point (VGS =VT) :

n: subthreshold slope, μ: mobility , Cox: oxide capacitance, and thermal voltage ϕt =kT/q

Current in the vicinity of VT:

IC: inversion coefficient, and kfit is model-fitting parameter

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Device and Circuit model

inversion coefficient: the degree of inversion of the transistor

sub-VT (IC<1)and above-VT (IC > 1)

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Device and Circuit model

Fig. 2 Inversion coefficient for HVT and LVT devices for a 65 nm technology.

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Device and Circuit model

Delay Model:

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Device and Circuit model

Energy Model:

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Sensitivity Analysis

gate sizing

supply voltage

threshold voltage

energy-delay trade-offs

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Sensitivity Analysis

Sensitivity: a parameter x represents a percent reduction in energy for a percent increase in delay

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Sensitivity Analysis

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Sensitivity Analysis

Formulas of S:

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Sensitivity Analysis

Good news for MEP region

Easier to do than to adjust gate sizing.

Not require any layout changes

Could be done after chip fabrication

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Energy-Delay Optimization

3 parameters for optimization:

Supply

Sizing

VT(selected from the available discrete values)

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Energy-Delay Optimization

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Energy-Delay Optimization

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Energy-Delay Optimization

Make VT is variable for

different regions of

energy-delay cure

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Sense-Amplifier-Based PTL (SAPTL)

How to make VT various?

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Sense-Amplifier-Based PTL (SAPTL)

PTL no path from VDD to gnd

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Sense-Amplifier-Based PTL (SAPTL)

Dactive: sum of the sense amplifier and driver delays

Dstack : the stack delay

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Sense-Amplifier-Based PTL (SAPTL)

www.themegallery.com

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Architectural Optimization

Some architectural can be used to get optimizationTime-multiplexing technique

www.themegallery.com

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Architectural Optimization

Pipelining for feedback time-multiplexed logic

www.themegallery.com

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Conclusion

1.MEP: expensive of performance.

2.MDP: expensive of energy.

3.Energy 20%↑ → 10-times in performance↑

4.PTL outperforms standard CMOS in the near-

threshold region(achieving lower energy).

5.The use of time-multiplexing: both lower area

and energy without performance penalty

(reduced leakage that comes with a lower area).

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