UK Semiconductors 2016 Technical Programmeuksemiconductors.com/wp-content/uploads/2012/01/UKS2016_Techni… · UK Semiconductors 2016 Technical Programme ... Wide-Bandgap Semiconductor

UK Semiconductors 2016 Technical Programme We are pleased to welcome our four high-profile international plenary speakers who will provide extended presentations on the growth and properties of III-N wide-bandgap devices, nano-opto-electo-mechanical systems, perovskites and nanowires. We also have a focus on perovskites as part of symposium F, with invited talks on photon recycling in perovskites photovoltaics, perovskites degradation issues and fabrication processes for scale-up of perovskite photovoltaics to large scale manufacture. Oral presentations and posters are arranged into specific symposia as listed below.

Plenary Lectures: Russell Dupuis, Andrea Fiore, David Mitzi, Anna Fontcuberta i Morral

Symposium A: Physics in Semiconductors

Symposium B: Optical Devices

Symposium C: Electronic Devices

Symposium D: Semiconductor Materials and Nanostructures

Symposium E: Mid-IR and THz Materials and Devices

Symposium F: Organic, Organic/Inorganic Hybrid Semiconductors and Perovskites Symposium G: Wide-Gap Nitride Semiconductors

2

Oral Presentations – Wednesday 6th July 2016

Pennine Lecture Theatre Peak Lecture Theatre Norfolk 210 Lecture Theatre

09:30 Registration and Refreshments, Atrium Level 2

10:30 Plenary 1

The Growth and Properties of III-N Wide-Bandgap Semiconductor

Devices OR

An Anorak’s Guide to the Practical Use of Aluminium, Eka-Aluminium

and Noxious Air

Russell D. Dupuis

Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250, USA

11:20 G-O-1 A-O-1 C-O-1

Fast growth of smooth AlN in a showerhead type vertical flow

MOVPE reactor

V. Z. Zubialevich1, Peter J.

Parbrook1,2

1Tyndall National Institute, Dyke

Parade, Cork City, Ireland 2School of Engineering, University

College Cork, Cork City, Ireland

Phonon-assisted electron tunneling in graphene-boron nitride

transistors

M. T. Greenaway1, E. E. Vdovin

1,5,6,

A. Mishchenko2, M. J. Zhu

2, D.

Ghazaryan2, A. Misra

3, Y. Cao

4, S. V.

Morozov5,6

, O. Makarovsky1, T. M.

Fromhold1, A. Patanè

1, G. J.

Slotman7, M. I. Katsnelson

7, A. K.

Geim2,4

, K. S. Novoselov2,3

, Laurence Eaves

1,2

1School of Physics & Astronomy,

University of Nottingham, Nottingham NG7 2RD, UK 2School of Physics & Astronomy,

University of Manchester, Manchester M13 9PL, UK 3National Graphene Institute,

University of Manchester, Manchester M13 9PL, UK 4Centre for Mesoscience and

Nanotechnology, University of Manchester, Manchester M13 9PL, UK 5Institute of Microelectronics

Technology, RAS, Chernogolovka 142432, Russia 6National University of Science and

Technology, 119049, Leninsky pr. 4, Moscow, Russia 7IMM, Radboud University,

Heyendaalseweg 135, 6525 AJ Nijmegen, The Netherlands

Advancing the stability and high power operation of diamond FETs

using transition metal oxides

Kevin G. Crawford1, Dongchen Qi

2,

Alexandre Tallaire3, Ernesto Limiti

4,

Claudio Verona4, David A. J. Moran

1

1School of Engineering, University of

Glasgow, Glasgow G12 8LT, United Kingdom 2Department of Chemistry and

Physics, La Trobe Institute for Molecular Science, La Trobe University, Melbourne, Victoria 3086, Australia 3LSPM-CNRS, Université Paris 13,

Villetaneuse 93430, France 4Department of Industrial

Engineering, “Tor Vergata” University, Rome, Italy

3


11:35 G-O-2 A-O-2 C-O-2

Growth and optical investigation of semipolar (11-22) AlGaN with high Al composition on overgrown GaN

on micro rod templates

Zhi Li, L. Jiu, Y. Gong, L. Wang, Y Zhang, T. Wang

Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

Suppression of inter-valley relaxation in monolayer WSe2 with

small magnetic fields Thomas P. Lyons

1, S. Dufferwiel

1, S.

Schwarz1, F. Withers

2, K. S.

Novoselov2, A. I. Tartakovskii

1

1Department of Physics and

Astronomy, University of Sheffield, Sheffield S3 7RH, UK 2School of Physics and Astronomy,

University of Manchester, Manchester M13 9PL, UK

Strain Simulations of Triangular SOI FinFET with different Channel

Orientations using 3D Quantum-Corrected MC toolbox

Muhammad A. Elmessary

1,2, D.

Nagy1, M. Aldegunde

3, A. J. García-

Loureiro4, K. Kalna

1

1ESDC, College of Engineering,

Swansea University, Swansea SA1 8EN, Wales, UK 2Math. & Engineering Physics Dept.,

Faculty of Engineering, Mansoura University, Mansoura 35516, Egypt 3WCPM, School of Engineering,

University of Warwick, Coventry CV4 7AL, England, UK 4CITIUS, Universidade de Santiago de

Compostela, 15782 Santiago de Compostela, Galicia, Spain

11:50 G-O-3 A-O-3 C-O-3

Optimization Study of the Fabrication Steps of a Deep-UV LED

Emitting at 240 nm Pietro Pampili

1,2, V. Z. Zubialevich

1,

M. Akhter1, P. P. Maaskant

1, B.

Corbett1, P. J. Parbrook

1,2

1Tyndall National Institute,

University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland 2School of Engineering, University

College Cork, Western Road, Cork, Ireland

Imaging Single Quantum Emitters in a Two-Dimensional Semiconductor

Pragati Kumar, R. Proux, G.

Ballesteros-Garcia, A. Branny, S. Kumar, B. D. Gerardot

Institute of Photonics and Quantum Sciences, Heriot-Watt University, Edinburgh EH14 4AS, UK

Experimental and Physical Modelling of Temperature

Dependence of a Double Quantum Well In0.18Ga0.82As/AlAs ASPAT

diode

Khairul N. Zainul Ariffin, S. G. Muttlak, M. R. R. Abdullah, Y. Wang,

Omar S. Abdulwahid, M. Missous School of Electrical and Electronic Engineering, University of Manchester, UK

12:05 G-O-4 A-O-4 C-O-4

Growth of High Crystalline Quality N-polar GaN on Si (100)

Gautier Laval

1, N. Mante

1, G.

Feuillet1, P. Ferret

1, N. Rochat

1, S.

David2, T. Baron

2, A. Dussaigne

1

1University of Grenoble Alpes, CEA,

LETI, MINATEC campus, F-38054 Grenoble, France 2University of Grenoble Alpes, CNRS-

LTM, F-38054 Grenoble, France

Manipulating spin-orbit coupled polaritonic states in a tunable

microcavity

Feng Li1, E. Cancellieri

1, S.

Dufferwiel1, L. Giriunas

1, A. Trichet

2,

D. M. Whittaker1, P. M. Walker

1, E.

Clarke3, I. Farrer

4, D.A. Ritchie

4, J. M.

Smith2, M. S. Skolnick

1, D. N.

Krizhanovskii1


Astronomy, University of Sheffield, Sheffield S3 7RH, UK 2Department of Materials, University

of Oxford, Parks Road, OX1 3PH, UK 3EPSRC National Centre for III-V

Technologies, University of Sheffield, S1 3JD, UK 4Cavendish Laboratory, University of

Cambridge, CB3 0HE, Cambridge, UK

Novel III–V semiconductor-based memory device

Ofogh Tizno, Andrew Marshall,

Manus Hayne Physics Department, Lancaster University, UK

4


12:20 G-O-5 A-O-5 C-O-5

Structural and Morphological Analysis of MOVPE grown Cubic

GaN

Lok Yi Lee1, M. Frentrup

1, S.-L.

Sahonta1, M. J. Kappers

1, L. J. Shaw

2,

P. J. Ward2, D. Nilsson

2, C. J.

Humphreys1, R. A. Oliver

1, D. J.

Wallis1

1Department of Materials Science

and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 0FS, UK 2Anvil Semiconductors Ltd, Windmill

Industrial Estate, Birmingham Road, Allesley, Coventry, CV5 9QE, UK

Transverse spatial Turing patterns and generation of chaotic light in a

semiconductor microcavity

Charles E. Whittaker1, B. Dzurnak

1,

P. M. Walker1, E. Cancellieri

1, O. A.

Egorov2, M. S. Skolnick

1, D. N.

Krizhanovskii1


Astronomy, University of Sheffield, Sheffield S3 7RH, UK 2Institute of Condensed Matter

Theory and Solid State Optics, Abbe Center of Photonics, Friedrich-Schiller Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany

Volatile Resistive Switching in Ni/TiO2/Ni stack for Access Devices

Application

Simone Cortese, Ali Khiat, Themis Prodromakis

Nanoelectronics & Nanotechnology Research Group, Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK

12:35 Lunch, Exhibition and Poster Session for Symposia A, C, E, G Atrium Level 2

13:00

IOP Student Research Communication Competition

Seminar Room 223

14:00 Plenary 2

Nano-opto-electro-mechanical systems based on III-V

semiconductors

Andrea Fiore Department of Appied Physics, Eindhoven University of Technology, The Netherlands

14:50 G-O-6 A-O-6 C-O-6

Direct measurement of quantum efficiencies in nitride LED materials

using a new combined micro-photoluminescence and micro-

photoreflectivity technique Matthew P. Halsall

1, I. F. Crowe

1, T.

Wang2

1Photon Science Institute and School

of Electrical and Electronic Engineering, University of Manchester, UK 2Department of Electronic and

Electrical Engineering, University of Sheffield, UK

Optomechanical backaction in a monolithic GaAs cantilever-cavity

structure Andrew P. Foster

1, J. K. Maguire

1, B.

Royall1, E. Clarke

2, L. R. Wilson

1, A.

M. Fox1, M. S. Skolnick

1


Astronomy, University of Sheffield, Sheffield S3 7RH, UK 2Department of Electronic and

Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK

Millimeter Wave Integrated Resonant Tunnelling Diode

oscillators

Saad G. Muttlak, J. Sexton, M. Missous

School of Electrical and Electronic Engineering, University of Manchester, UK

5


15:05 G-O-7 A-O-7 C-O-7

Integrated dual-colour InGaN light-emitting diode array through

transfer printing

Katherine Rae1, E. Y. Xie

1, A. J.

Trindade1, B. Guilhabert

1, R.

Ferreira1, J. J. D. McKendry

1, D. Zhu

2,

N. Laurand1, E. Gu

1, I. M. Watson

1, C.

J. Humphreys2, D. J. Wallis

2,3, M. D.

Dawson1

1Institute of Photonics, Dept. of

Physics, SUPA, University of Strathclyde, Glasgow, UK 2Dept. of Materials Science and

Metallurgy, University of Cambridge, Cambridge, UK 3Plessey Semiconductors Ltd,

Tamerton Road, Roborough, Plymouth, UK

Fractional Quantum Hall Effect in high mobility compressive strained

Ge Quantum Wells

Oliver J. Newell1, C. Morrison

1, C.

Rava2, S. Wiedmann

2, U. Zeitler

2, M.

Myronov1

1Department of Physics, University

of Warwick, Coventry CV4 7AL, UK 2High Field Magnet Laboratory,

Radboud University, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands

Modelling Sub-well Resonant Tunnelling Diode Terahertz Emitters

to Optimise Wall-Plug Efficiency Razvan Baba

1, Benjamin J. Stevens

2,

Toshikazu Mukai3, Richard A. Hogg

1


Glasgow, Glasgow, G12 8LT UK 2Department of Electronic and

Electrical Engineering, University of Sheffield, Sheffield, S3 7HQ UK 3Rohm Co. Ltd., Kyoto, 615-8585

Japan

15:20 G-O-8 A-O-8 C-O-8

Fabrication and characterisation of electrically injected hybrid

Organic/III-nitride white light-emitting diodes

Suneal Ghataora, R. Smith, M.

Athanasiou, T. Wang Department of Electronic and Electrical Engineering, the University of Sheffield, Sheffield S1 3JD, UK

Electron quantum lifetimes in high mobility InSb/In1-xAlxSb quantum

wells David G. Hayes

1, P. D. Buckle

1, C. P.

Allford1, G. V. Smith

1, A. M.

Gilbertson2, L. F. Cohen

2, S. Zhang

3,

E. Clarke3

1School of Physics and Astronomy,

Cardiff University, Queen’s Buildings, The Parade, Cardiff, CF24 3AA, UK 2Blackett Laboratory, Imperial

College London, Prince Consort Road, London, SW7 2BZ, UK 3EPSRC National Centre for III-V

Technologies, University of Sheffield, Sheffield, S3 7HQ, UK

Tunneling Barrier Diode for Millimeter Wave Mixing

Omar S. Abdulwahid, Mohd Rashid

Redza Abdullah, S. G. Muttlak, K. N. Zainul Ariffin, Mohamed Missous

School of Electrical and Electronic Engineering, University of Manchester, UK

15:35 G-O-9 A-O-9 E-O-1

Cathodoluminescence study of InGaN/GaN core-shell nanorod structures for optimising next

generation LED devices

Christopher G. Bryce1, Paul R.

Edwards1, Robert W. Martin

1,

Emmanuel D. Le Boulbar2, Phillip A.

Shields2, Duncan W. E. Allsopp

2

1Department of Physics, SUPA,

University of Strathclyde, Glasgow G4 0NG, UK 2Department of Electrical and

Electronic Engineering, University of Bath, BA2 7AY, UK

Experimental determination of state-radius using Quadratic

Zeeman effect

Konstantin L. Litvinenko1, J. Li

1, N.

Stavrias2, P. C. M Christianen

3, H.

Engelkamp3, C. R. Pidgeon

4, B. N.

Murdin1

1Advanced Technology Institute and

SEPNet, Department of Physics, University of Surrey, Guildford GU2 7XH, UK 2Radboud University, Institute for

Molecules and Materials, FELIX Laboratory, Toernooiveld 7c, NL-6525 ED Nijmegen, The Netherlands 3High Field Magnet Laboratory

(HFML - EMFL), Radboud University, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands 4Institute of Photonics and Quantum

Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, UK

Room Temperature Generation of THz Waves Using 2nd Order Non-Linear Excitonic Effects With CW Excitation of GaAs/AlGaAs Multi-

Quantum Well Structures

Avan N. Majeed1, B. J. Stevens

1, P.

Ivanov2, E. Clarke

1, N. Babazadeh

2,

D. T. D. Childs2, R. A. Hogg

2, O.

Kojima3

1Department of Electronic and

Electrical Engineering, University of Sheffield, Sheffield, S3 7HQ, UK 2School of Engineering, University of

Glasgow, Rankine Building, Glasgow, G12 8LT, UK 3Department of Electronic and

Electrical Engineering, Kobe University, 1-1 Rokkodai, Nada Kobe, 6578501, Japan

6


15:50 G-O-10 A-O-10 E-O-2

Properties of GaN Nanowires with ScxGa1-xN Insertion

An Bao

1, L. E. Goff

2, T. Zhu

1, S.-L.

Sahonta1, H. J. Joyce

3, R. A. Oliver

1


and Metallurgy, University of Cambridge, Cambridge, UK 2Department of Physics, University

of Cambridge, Cambridge, UK 3Department of Engineering,

University of Cambridge, Cambridge, UK

Experimental realization of a powerful and efficient nano-scale

energy harvester using the resonant tunneling of quantum dots

G. Jaliel

1, Reuben K. Puddy

1, H.

Beere1, D. A. Ritchie

1, M. Kelly

2, M.

Pepper3, C. G. Smith

1

1University of Cambridge, Cavendish

Laboratories, J.J. Thomson Avenue, Cambridge, CB3 0HE, UK 2Centre for Advanced Photonics and

Electronics, Electrical Engineering Division, Department of Engineering, 9 J. J. Thomson Avenue, University of Cambridge, Cambridge CB3 0FA, UK 3Department of Electronic and

Electrical Engineering, University College London, WC1E 7JE, UK

Pump-Probe Gain Recovery Measurements in a Terahertz

Quantum Cascade Laser David R. Bacon, Joshua R. Freeman,

Reshma A. Mohandas, Lianhe Li, Edmund H. Linfield, A. Giles Davies,

Paul Dean School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds, LS9 2JT, UK

16:05

Refreshments and Exhibition, Atrium Level 2

16:30 G-O-11 A-O-11 E-O-3

Impact of buffer layer structure on the vertical leakage current in

nitride HEMT devices F. S. Choi

1, J. T. Griffiths

1, C. Ren

1, A.

Bao1, K. B. Lee

2, Z. H. Zaidi

2, P. A.

Houston2, I. Guiney

1, D. J. Wallis

1, C.

J. Humphreys1, R. A. Oliver

1


and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK 2Department of Electronic and


Enhanced Rabi oscillation and exciton-phonon coupling in a resonantly driven QD-cavity system Luis M. P. Martins

1, A. J. Brash

1, Feng

Liu1, R. Manson

2, C. Bentham

1, R. J.

Coles1, B. Royall

1, L. Wilson

1, S.

Hughes2, M. S. Skolnick

1, A. M. Fox

1


Astronomy, University of Sheffield, UK 2Department of Physics, Engineering

Physics, and Astronomy, Queen’s University, Canada

Low-threshold, Single-mode Defect Line Terahertz Quantum Cascade

Laser Adam Klimont

1, R. Degl’Innocenti

1, L.

Masini2, Y. D. Shah

1, Y. Ren

1, D. S.

Jessop1, A. Tredicucci

3, H. E. Beere

1,

D. A. Ritchie1

1Cavendish Laboratory, University of

Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, UK 2NEST, Istituto Nanoscienze-CNR and

Scuola Normale Superiore, Piazza San Silvestro 12, Pisa, 56127, Italy 3Dipartimento di Fisica “E. Fermi”,

Universit`a di Pisa, Largo Pontecorvo 3, 56127 Pisa, Italy

7


16:45 G-O-12 A-O-12 E-O-4

Comprehensive electrical TCAD simulation of GaN HEMTs

Alex Yudin

1, Mathieu Senes

1, Ryu

Kaihara2, Alberto O. Adan

2, Valerie

Berryman-Bousquet1

1Sharp Laboratories of Europe Ltd.,

Oxford OX4 4GB, UK 2Sharp Corporation, Fukuyama,

Hiroshima 721-8522, Japan

NMR study of electron-nuclear spin interactions in negatively charged

InGaAs/GaAs quantum dots

Gautham Ragunathan1, A. M.

Waeber1, M. Hopkinson

2, I. Farrer

3,

D. A. Ritchie3, J. Nilsson

4, R. M.

Stevenson4, A. J. Bennett

4, A. J.

Shields4, M. S. Skolnick

1, E. A.

Chekhovich1


Astronomy, University of Sheffield, Sheffield, S3 7RH, UK 2Department of Electronic and

Electrical Engineering, University of Sheffield, S1 3JD, UK 3Cavendish Laboratory, University of

Cambridge, CB3 0HE, UK 4Toshiba Research Europe Limited,

Cambridge Research Laboratory, CB4 0GZ, UK

Self-Mixing as a means of Spectral Characterisation of a Terahertz QCL

James Keeley, J. Freeman, A. Valavanis, R. Mohandas, K. Bertling, T. Taimre, Y. L. Lim, L. H. Li, D. Indjin,

A. D. Rakić, E. H. Linfield, A. G. Davies, P. Dean

School of Electronic and Electrical Engineering, University of Leeds, Leeds, LS2 9JT, UK

17:00 G-O-13 D-O-1 E-O-5

Trapping Effects and Operational Frequency Degradation of GaN

HEMTs

Brendan Ubochi, K. Ahmeda, S. Faramehr, P. Igić, K. Kalna

Electronic Systems Design Centre (ESDC), College of Engineering, Swansea University Bay Campus, Fabian Way, Swansea, SA1 8EN, Wales, UK

Atomistic calculations of the electronic and optical properties of

site controlled InGaAs/GaAs quantum dots grown on (111)-

oriented GaAs substrates

R. Benchamekh1, Stefan Schulz

1, E.

P. O’Reilly1,2

1Photonics Theory Group, Tyndall

National Institute, Lee Maltings, Cork, Ireland 2Department of Physics, University

College Cork, Ireland

Dilute nitride photodiode and resonant tunneling diode for mid-

infrared applications Manoj Kesaria

1, D. M. Di Paola

2, M.

d. l. Mare1, A. V. Velichko

2, O.

Makarovsky2, A. Patanè

2, A. Krier

1

1Physics Department, Lancaster

University, Lancaster LA1 4YB, UK 2School of Physics and Astronomy,

University of Nottingham, Nottingham NG7 2RD, UK

17:15 G-O-14 D-O-2 E-O-6

Nanocathodoluminescence reveals the mitigation of the Stark shift in

InGaN quantum wells by silicon doping

James T. Griffiths

1, S. Zhang

1, B.

Rouet-Leduc1, W. Y. Fu

1, D. Zhu

1,2, D.

Wallis1,2

, A. Howkins3, I. Boyd

3, D.

Stowe4, C. J. Humphreys

1, R. A.

Oliver1

1Department of Materials Science and Metallurgy, 27 Charles Babbage Road, Cambridge CB3 0FS, UK 2. Plessey Semiconductors, Tamerton Road, Plymouth PL6 7BQ, UK 3. Experimental Techniques Centre, Brunel University, Uxbridge UB8 3PH, UK 4. Gatan UK, 25 Nuffield Way, Abingdon, Oxon OX14 1RL, UK

Polarisation Independent In-plane Spin Initialisation in a Quantum Dot

embedded in a Nanobeam Waveguide

David M. Price

1, R. J. Coles

1, B.

Royall1, E. Clarke

2, A. M. Fox

1, M. S.

Skolnick1, M. N. Makhonin

1


Astronomy, University of Sheffield, Sheffield S3 7RH, UK 2EPSRC National Centre for III-V

Technologies, University of Sheffield, Sheffield S1 3JD, UK

Enhanced absorption of infrared radiation in thin semiconductor

photodetectors using nano-antenna arrays

Robert J. Espley-Jones

1, R. Jefferies

1,

Y. Alimi1, M. J. Ashwin

2, T. Ashley

1


Warwick, Coventry CV4 7AL, UK 2Department of Physics, University

of Warwick, Coventry CV4 7AL, UK

8


17:30 G-O-15 D-O-3 E-O-7 Electronic and optical properties of

nonpolar InGaN/GaN quantum dots: Impact of shape-anisotropies

and Coulomb effects

Saroj Kanta Patra1,2

, S. Schulz1

1Tyndall National Institute, UCC,

Ireland 2Department of Electrical

Engineering, UCC, Ireland

Polarization-insensitive intraband transition in InAs/GaAs quantum

dot superlattices Yukihiro Harada

1,2, Junya Yamada

2,

Daiki Watanabe2, Shigeo Asahi

2,

Takashi Kita2

1Department of Physics, Blackett

Laboratory, Imperial College London, UK 2Department of Electrical and

Electronic Engineering, Graduate School of Engineering, Kobe University, Japan

Novel Monolithically Integrated Photo-pixels for Mid-IR Imaging

Chengzhi Xie, Vincenzo Pusino, Ata

Khalid, Mohsin Aziz, Matthew J. Steer, David R. S. Cumming

Electronics and Nanoscale Division, School of Engineering, University of Glasgow, Glasgow G12 8LT, UK

17:45 G-O-16 D-O-4 E-O-8

Microstructure investigation of semipolar (11-22) GaN overgrown on different size micro-rod array

templates Yun Zhang, X. Yu, K. Xing, Y. Gong, J.

Bai, R. M. Smith, T. Wang Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK

Vanishing electron g-factor and long-lived nuclear spin polarization

in nano-hole filled GaAs/AlGaAs quantum dots

Ata Ulhaq

1, Qingqing Duan

1, Eugenio

Zallo2, Fei Ding

2, Oliver G. Schmidt

2,

Alexander I. Tartakovskii1, Maurice

S. Skolnick1, Evgeny A. Chekhovich

1


Astronomy, University of Sheffield, Sheffield S3 7RH, UK 2Institute for Integrative

Nanoscience, IFW Dresden, Helmholtz str. D-01069, Dresden, Germany

High Operating Temperature Multispectral Infrared Imaging

Technology

Manish Jain1, Adam P. Craig

1,2,

Andrew R. J. Marshall2, Gary W.

Wicks1, John Sharp

3, Thomas Slight

4,

Terry D. Golding1

1Amethyst Research Ltd. Unit 8,

Block 6, Kelvin Campus, West of Scotland Science Park, Glasgow, G20 0SP 2Physics Department, Lancaster

University, Lancaster LA1 4YB 3Helia Photonics Ltd. 2 Rosebank Rd,

Livingston EH54 7EJ 4Compound Semiconductor

Technology, 4 Stanley Boulevard, Blantyre, Glasgow, G72 0BN

18:00

End of Session

18:30

Conference Dinner

Crystal Bar 23-32 Carver Street, Sheffield S1 4FS

9

Oral Presentations – Thursday 7th July 2016


09:00 Registration and Refreshments, Atrium Level 2

09:30 Plenary 3

Perovskite Semiconductors: Opportunities for Photovoltaics and

Beyond

David Mitzi

Dept. of Mech. Eng. and Mater. Sci., Duke University, Durham, NC 27708 USA

10:15 Refreshments and Exhibition, Atrium Level 2

10:45 B-O-1 D-O-5 (Invited) F-O-1 (Invited)

Si-doped InAs/GaAs quantum dot solar cell with AlAs cap layers

Dongyoung Kim

1, Mingchu Tang

1,

Jiang Wu1, Sabina Hatch

1, Yurii

Maidaniuk2, Vitally Dorogan

2, Yuriy I.

Mazur2, Gregory J. Salamo

2, Huiyun

Liu1


Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK 2Institute for Nanoscience and

Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

Strain-engineered graphene grown on hexagonal boron nitride by MBE

A. Summerfield1, A. Davies

1,2, T. S.

Cheng1, V. V. Korolkov

1, Y. J. Cho

1, C.

J. Mellor1, C. T. Foxon

1, A. N.

Khlobystov2, K. Watanabe

3, T.

Taniguchi3, L. Eaves

1, J. Diez Albar

1,

S. V. Novikov1, Peter H. Beton

1

1School of Physics & Astronomy,

Univeristy of Nottingham, Nottingham NG7 2RD, UK 2School of Chemistry, University of

Nottingham, Nottingham NG7 2RD, UK 3National Institute for Materials

Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Photon recycling in Organic-inorganic Lead Halide Perovskites

Felix Deschler

Optoelectronics Group, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, UK

11:00 B-O-2

Light emitting GaSb/GaAs quantum-ring devices

Peter D. Hodgson

1, A. J. Robson

1, Q.

D. Zhuang1, L. Danos

2, S.

McDougall3, M. Hayne

1

1Department of Physics, Lancaster

University, Lancaster LA1 4YB, UK 2Department of Chemistry,

Lancaster University, Lancaster LA1 4YB, UK 3CST Global Ltd, 4 Stanley Blvd,

Hamilton International Technology. Park., Glasgow G72 0BN, UK

10


11:15 B-O-3 D-O-6 F-O-2

On-Chip Integration of Electrically Driven Single-Photon Sources

D. Hallett

1, Chris Bentham

1, N.

Prtljaga1, B. Royall

1, D. Vaitiekus

1, E.

Clarke2, A. M. Fox

1, L. R. Wilson

1, M.

S. Skolnick1, I. E. Itskevich

3


Astronomy, University of Sheffield, S3 7RH, UK 2EPSRC National Centre for III-V

Technologies, University of Sheffield, Sheffield S1 3JD, UK 3School of Engineering, University of

Hull, Hull HU6 7RX, UK

Quantum confinement in van der Waals β-In2Se3 layered crystals grown by vapor mass transport

Nilanthy Balakrishnan

1, Christopher

R. Staddon1, Emily F. Smith

2, Jakub

Stec1, Dean Gay

1, Garry W. Mudd

1,

Oleg Makarovsky1, Zakhar R.

Kudrynskyi1, Zakhar D. Kovalyuk

3,

Laurence Eaves1, Amalia Patanè

1,

Peter H. Beton1


University of Nottingham, Nottingham NG7 2RD, UK 2School of Chemistry, University of

Nottingham, Nottingham NG7 2RD, UK 3Institute for Problems of Materials

Science, The National Academy of Sciences of Ukraine Chernivtsi, 58001 Ukraine

The photophysics of BODIPY Dyes in a strong-coupled microcavity

Richard T. Grant

1, T. Virgili

2, P.

Michetti3, C. Silva

4, D.G. Lidzey

1


Astronomy, University of Sheffield, Sheffield S3 7RH, UK 2Dipartimento Di Fisica, Politecnico

Di Milano, Milan, 20133, Italy 3Physik und Astonomie, Universität

Würzburg, Würzburg, 97074, Germany 4Département de Physique,

Université de Montréal, Montreal, QC H3T 1J4, Canada

11:30 B-O-4 D-O-7 F-O-3

Opto-electronic Properties of Strain Compensated InAs/GaAs Quantum

Dot Devices Grown by MOVPE

Timothy S. Roberts1, B. J. Stevens

1,

E. Clarke2, I. Tooley

1, J. Orchard

3, I.

Farrer1, D. T. D. Childs

4, N.

Babazadeh4, N. Ozaki

5, D. Mowbray

3,

R. A. Hogg4

1Department of Electronic &

Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK 2EPSRC National Centre for III-V

Technologies, University of Sheffield, Sheffield S3 7HQ, UK 3Department of Physics and

Astronomy, University of Sheffield, Sheffield, S3 7RH, UK 4Department of Electronic &

Nanoscale Engineering, University of Glasgow, Glasgow, G12 8QQ,UK 5Department of Material Science

and Chemistry, Wakayama University, Wakayama 640-8510, Japan

Interlayer excitons in transition metal dichalcogenide

heterostructures

Oleksandr V. Skrypka1, E. M.

Alexeev1, L. Hague

2, T. Godde

1, F.

Withers2, K. S. Novoselov

2, A. I.

Tartakovskii1




Hybrid white inorganic/organic LEDs using organic colour

converters

Jochen Bruckbauer1, E. Taylor-

Shaw1, N. J. Findlay

2, C. Brasser

1, E.

Angioni2, B. Breig

2, S. Arumugam

2, A.

R. Inigo2, P. R. Edwards

1, D. J.

Wallis3, P. J. Skabara

2, R. W. Martin

1

1Department of Physics, SUPA,

University of Strathclyde, Glasgow, UK 2Department of Pure and Applied

Chemistry, WestCHEM, University of Strathclyde, Glasgow, UK 3Plessey Semiconductors Ltd,

Roborough, Plymouth, UK

11


11:45 B-O-5 D-O-8 F-O-4 (Invited)

Analysis of Electro-absorption Properties of Highly Uniform

1300nm In(Ga)As/GaAs Quantum Dot Materials

Soroush A. Sobhani

1, D. T. D. Childs

1,

N. Babazadeh1, B. J. Stevens

2, K.

Nishi3, M. Suguwara

3, K. Takemasa

3,

R. A. Hogg1


Glasgow, Rankine Building, G12 8LT, UK 2Department of Electronic and

Electrical Engineering, University of Sheffield, North Campus, S3 7HQ, UK 3QD Laser Incorporated, Kawasaki,

Kanagawa, 210-855, Japan

Rhenium dichalcogenides: anisotropic semiconductors with

two vertical orientations

Lewis Hart, Sara Dale, Sarah Hoye, James L. Webb, Daniel Wolverson

Department of Physics, University of Bath, Bath BA2 7AY, UK

Printing perovskite: designing the fabrication route to large scale

manufacture

Trystan Watson, Jenny Baker, Joel Troughton, Francesca DeRossi,

Simone Meroni, Katherine Hooper, Daniel Williams, Dave Worsley, Daniel Burkitt, Ben Smith, Peter

Greenwood SPECIFIC, College of Engineering, Swansea University, Bay Campus, Fabian Way, Swansea, UK

12:00 B-O-6 D-O-9

InAs/GaAs Quantum Dot Lasers Grown on Si Substrates with

Optimised InGaAs/GaAs Defect Filter Layer

Mingchu Tang

1, Siming Chen

1, Jiang

Wu1, Qi Jiang

1, Mengya Liao

1, Ken

Kennedy2, Richard Beanland

3, Alwyn

Seeds1, Huiyun Liu

1


Electrical Engineering, University College London, London WC1E 7JE, UK 2Department of Electronic and

Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK 3Department of Physics, University

of Warwick, Coventry, CV4 7AL, UK

InSe hybrid heterostructures and nanomechanical probing of the

heterostructure interface J. D. G. Greener

1, R. Beardsley

1, G. W

Mudd1, N. Balakrishnan

1, S.

Sandeep1, Z. R. Kudrynskyi

1, A. V.

Akimov1, Anthony J. Kent

1, O.

Makarovsky1, Z. D. Kovalyuk

2, P. H.

Beton1, L. Eaves

1, A. Patanè

1


University of Nottingham, Nottingham NG7 2RD, UK 2Institute for Problems of Materials

Science, The National Academy of Sciences of Ukraine, Ukraine

12:15 B-O-7 D-O-10 F-O-5

Precise optimisation of internal optical mode loss in InAs quantum

dot lasers through a modulated segmented contact method

Peter E. Rees, S. N. Elliott, P.M.

Smowton, P. Blood School of Physics and Astronomy, Cardiff University, Queens Buildings, The Parade, Cardiff CF24 3AA, UK

Increasing the extraction efficiency of quantum light from 2D materials Christopher Woodhead

1, J. Roberts

1,

Y. Noori1, A. Kozikov

2, Y. Cao

1, R.

Bernardo-Gavito1, K. Novoselov

2, R.

J. Young1


University, Lancaster, Lancashire, LA1 4YB, UK 2School of Physics and Astronomy,

University of Manchester, Oxford Road, Manchester, M13 9PL, UK

Spray-cast multilayer organometal perovskite solar cells fabricated in

air

David K. Mohamad, Griffin, C. Bracher, A. T. Barrowsa and D. G.

Lidzey Department of Physics & Astronomy, University of Sheffield, Hicks Building, Hounsfield Road, Sheffield, S3 7RH, UK

12


12:30 B-O-8 D-O-11 F-O-6

InAs/GaAs Quantum Dot Laser Monolithically Grown on Si

Substrate with Long Lifetime

Mengya Liao, Siming Chen, Jiang Wu, Mingchu Tang, Huiyun Liu

Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK

Electrically pumped quantum emitters in van der Waals

heterostructures

Stefan Schwarz1, F. Withers

2, J. K.

Maguire1, A. P. Foster

1, S.

Dufferwiel1, E. M. Alexeev

1, L.

Hague2, A. Kozikov

2, M. N.

Makhonin1, L. R. Wilson

1, K. S.

Novoselov2, A.I. Tartakovskii

1




Centimetre scale mesoscopic perovskite solar cells via a novel combined solid state - solution

crystallisation method

Premlal B. Pillai, M. M. De Souza Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK

12:45 Lunch, Exhibition and Poster Session for Symposia B, D, F, Atrium Level 2

13:00 IOP Semiconductor Group AGM

14:00

IOP Student Research

Communication Competition Prizegiving

14:05 Plenary 4

III-V Semiconductor Nanowires and Related Heterostructures

Anna Fontcuberta i Morral

Laboratory of Semiconductor Materials, Institute of Materials, EPFL, Switzerland

14:55 B-O-9 D-O-12 F-O-7

Low-loss Superlenses made from Quantum Metamaterials

Alexey O. Bak

1, Edward O. Yoxall

1,2,

Paulo Sarriugarte2, Vincenzo

Giannini3, Edmund Clarke

4, Ken

Kennedy4, Stefan A. Maier

1, Rainer

Hillenbrand2, John B. Pendry

3, Chris

C. Phillips1

1Experimental Solid State Physics

Group, Physics Dept., Imperial College, London SW7 2AZ.UK. 2CIC nanoGUNE Consolider, 20018

Donostia-San Sebastián, Spain. 3Condensed Matter Theory Group,

Physics Dept., Imperial College, London SW7 2AZ, UK. 4EPSRC National Centre for III-V

Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK

Controllable Growth of InAs Inserts in Selective-area InAsP Nanowires

on InP Diana L. Huffaker

1,2,3, Dingkun Ren

2,

Alan C. Farrell2, Benjamin S.

Williams2,3


Cardiff University, UK 2Electrical Engineering Department,

University of California at Los Angeles, USA 3California NanoSystems Institute,

University of California at Los Angeles, Los Angeles, USA

Voltage-matched tandem solar cells with superior spectral stability

utilizing singlet fission for silicon tandem solar cell exceeding 100%

external quantum efficiency Luis M. Pazos-Outón

2,1, Ju Min Lee

1,

Anton Kirch2, Maxim Tabachnyk

2,

Moritz Futscher1, Richard H. Friend

2,

Bruno Ehrler1

1FOM Institute AMOLF, Center for

Nanophotonics, Science Park 104, 1098 XG Amsterdam, The Netherlands 2Cavendish Laboratory, University

of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK

13


15:10 B-O-10 D-O-13 F-O-8

Evidence for the Direct Nature of the Bandgap in GeSn/Si

Photodiodes using Hydrostatic Pressure

Igor P. Marko

1, Timothy Eales

1,

Seyed A. Ghetmiri2, Wei Du

2, Yiyin

Zhou2, Shui-Qing Yu

2, Stephen J.

Sweeney1


Department of Physics, University of Surrey, Guildford GU2 7XH, UK 2Department of Electrical

Engineering, University of Arkansas, Fayetteville, AR, 72701, USA

Influence of Droplet Size on the Growth of Self-Catalyzed Ternary

GaAsP Nanowires and Dot-in-Wire Structure

Yunyan Zhang

1, Jiang Wu

1, Ana M.

Sanchez3, Martin Aagesen

2, Andrew

Ramsay4, Frederic Brossard

4,

Dongyoung Kim1, Pamela Jurczak

1,

Suguo Huo5, Huiyun Liu

1


Electrical Engineering, University College London, London WC1E 7JE, UK 2Gasp Solar ApS, Gregersensvej 7,

Taastrup DK-2630, Denmark 3Department of Physics, University

of Warwick, Coventry CV4 7AL, UK 4Hitachi Cambridge Laboratory,

Hitachi Europe Ltd., Cambridge CB3 0HE, UK 5London Centre for Nanotechnology,

University College London, London WC1H 0AH, UK

Open-circuit Voltage in Inverted Polycarbazole: Fullerene Bulk

Heterojunction Solar Cells Rania Alqurashi, Jonathan Griffin, Abdullah Alsulami, Alastair Buckley Department of Physics and Astronomy, University of Sheffield, Hicks Building, Hounsfield Street, S3 7RH, UK

15:25 B-O-11 D-O-14 F-O-9

High-efficiency “Quantum Ratchet" intermediate band solar cells

Anthony Vaquero-Stainer

1, Nicholas

Hylton1, Megumi Yoshida

1, Andreas

Pusch1, Kenneth Kennedy

2, Edmund

Clarke2, Saurabh Kumar

2, Mark

Frogley3, Gianfelice Cinque

3, Ortwin

Hess1, Ned Ekins-Daukes

1, Chris

Phillips1

1Department of Physics, Imperial

College London, UK 2EPSRC National Centre for III-V

Technologies, University of Sheffield, UK 3Diamond Light Source, Harwell, UK

Control of mechanical mode coupling in GaAs nanowires

A. P. Foster

1, Joseph K. Maguire

1, J.

P. Bradley1, A. Krysa

2, M. S.

Skolnick1, L. R. Wilson

1


Astronomy, University of Sheffield, Sheffield S3 7RH, UK 2EPSRC National Centre for III-V

Technologies, University of Sheffield, Sheffield S1 3JD, UK

Effect of thermal annealing on film morphology and device

performance of PffBT4T-2OD/PC71BM photovoltaic devices

Yiwei Zhang

1, Andrew J. Parnell

1,

Fabio Pontecchiani1, Joshaniel F. K.

Cooper2, Richard L. Thompson

3,

Richard A. L. Jones1, Stephen M.

King2, David G. Lidzey

1, Gabriel

Bernardo1


Astronomy, The University of Sheffield, S3 7RH, UK 2ISIS Pulsed Neutron and Muon

Source, STFC, Rutherford Appleton Laboratory, Harwell, Oxon, OX11 0QX, UK 3Department of Chemistry, Durham

University, South Road DH1 3LE, UK

15:40

Refreshments, Atrium Level 2

14


16:00 B-O-12 D-O-15 F-O-10 (Invited)

Theory of InGaBiAs/InP mid-infrared semiconductor lasers

Christopher A. Broderick, Wanshu

Xiong, Judy M. Rorison Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1UB, UK

Photoluminescence up-conversion at GaAs/InGaP interfaces driven by

a sequential two-photon absorption mechanism

Nic P. Hylton

1, T. F. Hinrichsen

1,2, A.

R. Vaquero-Stainer1, M. Yoshida

1, A.

Pusch1, M. Hopkinson

3, O. Hess

1, C.

C. Phillips1, N. J. Ekins-Daukes

1

1Department of Physics, The

Blackett Laboratory, Imperial College London, South Kensington Campus, London SW7 2AZ, UK 2IV. Physikalisches Institut, Georg-

August-Universität Göttingen, 37077 Göttingen, Germany 3Department of Electronic and


Understanding the stability of hybrid perovskite materials and

photovoltaic devices

Saif A. Haque Department of Chemistry, Imperial College London, London SW7 2AZ, UK

16:15 B-O-13 D-O-16

Recombination Processes in Type I GaInAsSb/GaSb Lasers Emitting in the Mid Infrared Range of 2.3-2.9

μm

Timothy Eales1, Igor P. Marko

1,

Barnabas A. Ikyo1, Alf R. Adams

1,

Shamsul Arafin2, Stephan Sprengel

2,

M.-C. Amann2, Stephen J. Sweeney

1


Department of Physics, University of Surrey, Guildford GU2 7XH, UK 2Walter Schottky Institut,

Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany

Hybrid graphene-quantum dot transistor: controlling carrier concentration, mobility and

photoresponsivity

Lyudmila Turyanska1,2

, Oleg Makarovsky

1, Simon A. Svatek

1,

Peter H. Beton1, Christopher J.

Mellor1, Amalia Patanè

1, Laurence

Eaves1, Alexander J. Marsden

4, Neil

R. Wilson4, N. Mori


The University of Nottingham, Nottingham NG7 2RD, UK 2School of Chemistry, Univesrity of

Lincoln, Lincoln LN6 7TS, UK 3Department of Physics, University

of Warwick, Coventry CV4 7AL, UK 4School of Engineering, Osaka

University, Japan

16:30 B-O-14 D-O-17 F-O-11

InAs Thermophotovoltaic Panel for Waste Heat Energy Recycling

Qi Lu

1, M. Kesaria

1, A. R. J. Marshall

1,

S. E. Krier1, A. Krier

1, S. McDougall

2,

W. Meredith2, J. Inskip

3, A. Scholes

4


University, Lancaster, LA1 4YB, UK 2CST Global Ltd., Hamilton

International Technology Park, Blantyre, Glasgow, G72 0BN, UK 3NSG Technical Centre, Hall Lane,

Lathom, L40 5UF, UK 4Materials Processing Institute,

Grangetown, Middlesbrough, TS6 6US, UK

Low-temperature heteroepitaxy of very high crystalline quality 3C-SiC

on standard Si wafer

Maksym Myronov, G. Colston Department of Physics, The University of Warwick, Coventry CV4 7AL, UK

Oxygen induced degradation pathways in hybrid perovskite solar

cells

Andrew Pearson1, Mejd Almheiri

1,

Giles Eperon2, Paul Hopkinson

3,

Severin Habisreutinger2, Jacob

Wang2, Henry Snaith

2, Neil

Greenham1

1Department of Physics, Cavendish

Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK 2Department of Physics, Clarendon

Laboratory, University of Oxford, Parks Road, Oxford, OX1 3PU, UK 3Centre for Advanced Materials,

Universitat Heidelberg, Heidelberg 69120, Germany

15


16:45 B-O-15 D-O-18 F-O-12

Al1-xGaxAs0.56Sb0.44 avalanche photodiodes for high speed optical

communication Xinxin Zhou, S. Xie, S. Zhang, J. S. Ng,

C. H. Tan Department of Electronic and Electrical Engineering, University Of Sheffield, Sheffield S1 3JD, UK

Defect-free patterning of GaAs surface by friction-induced

nanofabrication Bingjun Yu

1,2, Jiang Wu

2, Huiyun Liu

2,

Linmao Qian1

1Tribology Research Institute,

National Traction Power Laboratory, Southwest Jiaotong University, Chengdu 610031, Sichuan Province, P.R. China 2Department of Electronic &

Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK

Charge Transport in Semicrystalline Polymer Semiconductors

Riccardo Di Pietro

1, Joshua

Carpenter2, Harald Ade

2, Henning

Sirringhaus3, Dieter Neher

4

1Hitachi Cambridge Laboratory, CB3

0HE Cambridge, UK 2North Carolina State University,

Department of Physics, Raleigh, NC 27695, USA 3University of Cambridge, Cavendish

Laboratory, CB3 0HE Cambridge, UK 4Universität Potsdam, Institut für

Physik und Astronomie, 14476 Potsdam, Germany

17:00 Conference Close

Poster Presentations – Wednesday 6th July, Atrium Level 2

Symposium A: Physics in Semiconductors A-P-1 Quantum correlations of out-of-equilibrium microcavity polariton solitons Giuseppe Buonaiuto, E. Cancellieri, D. M. Whittaker Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK A-P-2 Giant Nonlinear Spatio-Temporal Modulation in Polaritonic Waveguides P. M. Walker1, L. Tinkler1, Charles E. Whittaker1, D. V. Skryabin2, A. Yulin2, M. Sich1, B. Royall1, I. Farrer1,3, D. A. Ritchie3, M. S. Skolnick1, D. N. Krizhanovskii1 1Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK 2ITMO University 197101, Kronverksky pr. St. Petersburg, Russian Federation 3Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK A-P-3 Accumulation of Topological Pancharatnam-Berry Phase In Polariton Spin-Orbit Coupled States Emiliano Cancellieri, G. Buonaiuto, F. Li, D. Krizhanovskii, M. S. Skolnick, D. Whittaker Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK A-P-4 Spin and valence band mixing in telecoms wavelength quantum dots Edmund Harbord1, Edmund Clarke2, Ruth Oulton1,3 1HH Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, UK 2EPSRC National Centre for III-V Technologies, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK 3Department of Electrical and Electronic Engineering, University of Bristol, BS8 1UB, UK

16

A-P-5 Tuning the coupling strength and mode symmetry of photonic molecules using end-hole displacement Qingqing Duan, D. M. Whittaker, A. M. Fox, M. S. Skolnick, L. R. Wilson Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK A-P-6 Conductance quantization in one-dimensional p-type Ge Yilmaz Gul1, P. J. Newton2, S. N. Holmes3, C. Morrison4, M. Myronov4, M. Pepper1, C. H. W. Barnes2 1London Centre for Nanotechnology, University College London, WC1H 0AH, UK 2Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK 3Toshiba Research Europe Ltd, Cambridge Research Laboratory, CB4 0GZ, UK 4Department of Physics, University of Warwick, Coventry, CV4 7AL, UK A-P-7 Efficient light extraction from 2D materials using rod-based photonic crystals Y. J. Noori, Y. Cao, Christopher Woodhead, J. Roberts, R. Bernardo-Gavito, R. J. Young Department of Physics, Lancaster University, UK A-P-8 Enhanced effective g-factor of InSb QW 2DEGs at milli-Kelvin temperatures George V. Smith1, Philip D. Buckle1, David G. Hayes1, Shiyong Zhang2, Edmund Clarke2 1School of Physics and Astronomy, Cardiff University, Queen’s Buildings, The Parade, Cardiff, CF24 3AA, United Kingdom 2EPSRC National Centre for III-V Technologies, North Campus, University of Sheffield, Sheffield, S3 7HQ, United Kingdom

Symposium C: Electronic Devices

C-P-1 Microwave Performance of GaAs/AlAs Asymmetric Spacer Layer Tunnel (ASPAT) Diodes Mohd Rashid Redza Abdullah1, Yuekun Wang1, J. Sexton1, Kawa Ian2, Mohamed Missous1 1School of Electrical and Electronic Engineering, University of Manchester, UK 2Integrated Compound Semiconductors, Manchester, UK C-P-2 Physical Modelling and experimental studies of InGaAs/AlAs Asymmetric spacer layer tunnel diodes Yuekun Wang1, K. N. Zainul Ariffin1, Kawa Ian2, Mohamed Missous1 1School of Electrical and Electronic Engineering, University of Manchester, UK 2Integrated Compound Semiconductors Ltd, Manchester, UK C-P-3 Strained Epitaxy Limitations to Realising High Wall Plug Efficiency Resonant Tunnelling Diode Terahertz Emitters Razvan Baba1, Benjamin J. Stevens2, Toshikazu Mukai3, Richard A. Hogg1 1School of Engineering, University of Glasgow, Glasgow G12 8LT, UK 2Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S3 7HQ, UK 3Rohm Co. Ltd., Kyoto, 615-8585 Japan C-P-4 Effective and Channel Mobility Extraction in ZnO Nanowire Transistors Alnazer Mohamed1, H. M. H. Chong2, K. Kalna1 1College of Engineering, Swansea University, Swansea, SA1 8EN, Wales, UK 2Schools of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK

17

C-P-5 Power Dissipation in Si and GaAs Nanowire Field Effect Transistors Anna Price, Antonio Martinez College of Engineering, University of Swansea, UK C-P-6 HCl Cleaning and Surface Preparation for Gate Dielectrics on InSb Oliver J. Vavasour1, M. Walker2, R. Jefferies1, J. W. Roberts3, P. R. Chalker3, T. Ashley1 1School of Engineering, University of Warwick, Coventry CV4 7AL, UK 2Department of Physics, University of Warwick, Coventry CV4 7AL, UK 3School of Engineering, University of Liverpool, Liverpool L69 3GH, UK C-P-7 Low-Voltage InGaZnO Transistors Based on Sputtered Electrolyte Dielectrics Xiaochen Ma1, Hanbin Wang2, Jiawei Zhang1, Aimin Song1 1School of Electrical and Electronic Engineering, University of Manchester, Manchester, M13 9PL, UK 2School of Physics, Shandong University, Jinan, 100083, China C-P-8 Study of barrier inhomogeneities using current–voltage characteristics of Ni/4H-SiC Schottky diode Samira Soltani1,2, Abdelhak Ferhat Hamida1,2, Max Caley3 1Department of Electronics, Ferhat Abbas University, Setif1 Algeria, 19000, Algeria 2Optoelectronics and Component Laboratory, Ferhat Abbas University, Setif1 Algeria, 19000, Algeria 3Sheffield Hallam Institute of Education, Sheffield Hallam University, Sheffield, UK

Symposium E: Mid-IR and THz Materials and Devices E-P-1 Antimonide Processing for Monolithically Integrated Mid-IR Focal Plane Arrays on Semi-Insulating GaAs Substrates Vincenzo Pusino, Chengzhi Xie, Ata Khalid, Mohsin Aziz, Matthew J. Steer, David R. S. Cumming Electronics and Nanoscale Division, School of Engineering, University of Glasgow, Glasgow G12 8LT, UK E-P-2 Optoelectronic Amplitude Modulation of an External Cavity Quantum Cascade Laser David S. Jessop1, R. Degl’Innocenti1, Y. Ren1, R. Wallis1, P. Braeuninger-Weimer2, S. J. Kindness1, S. Hofmann2, H. E. Beere1, D. A. Ritchie1 1Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, UK 2Dept. of Engineering, University of Cambridge, 9 J J Thomson Avenue, Cambridge, CB3 0FA, UK E-P-3 Dual-colour InAs/InAs1-xSbx superlattice photodetectors Veronica Letka, A. Craig, A. Krier, A. R. J. Marshall Physics Department, Lancaster University, Lancaster LA1 4YB, UK

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Symposium G: Wide-gap Nitrides G-P-1 Nature of Low-temperature AlN Grown by Metalorganic Vapour Phase Epitaxy Quanzhong Jiang1, Duncan W.E. Allsopp1, Chris R. Bowen2, Alexander Satka3,4, Juraj Priesol3 1Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, UK 2Department of Mechanical Engineering, University of Bath, Bath BA2 7AY, UK 3Institute of Electronics and Photonics, FEI STU, Bratislava, Slovakia 4International Laser Centre, 841 04 Bratislava, Slovakia G-P-2 A comparative study of the optoelectronic properties of dislocations in AlGaN and InGaN Fabien C.-P. Massabuau1, T. J. O'Hanlon1, M. Zielinski2, M. J. Kappers1, C. J. Humphreys1, R. A. Oliver1 1Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK 2Attolight AG, EPFL Innovation Park, Lausanne, Switzerland G-P-3 Characterization of InGaN quantum well interface by X-ray techniques Fabien C.-P. Massabuau, X. Wang, Q. Avenas, M. J. Kappers, C. J. Humphreys, R. A. Oliver Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK G-P-4 What Limits the Efficiency of Green (0001) InGaN LEDs? Markus Pristovsek1, Rachel A. Oliver1, Tom Badcock2, Muhammad Ali2, Andrew Shields2 1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK 2Toshiba Research Europe Ltd., Cambridge Research Laboratory, 208 Science Park, Milton Road, Cambridge, CB4 0GZ, UK G-P-5 Evidence of Room-temperature Hopping Conduction in aluminum-rich Si:AlGaN Pietro Pampili1,2, D. V. Dinh1, V. Z. Zubialevich1, P. J. Parbrook1,2 1Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland 2School of Engineering, University College Cork, Western Road, Cork, Ireland G-P-6 Optimization Study of the Fabrication Steps of a Deep-UV LED Emitting at 240 nm Pietro Pampili1,2, V. Z. Zubialevich1, M. Akhter1, P. P. Maaskant1, B. Corbett1, P. J. Parbrook1,2 1Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland 2School of Engineering, University College Cork, Western Road, Cork, Ireland G-P-7 Free-standing semipolar (11-22) InGaN Light Emitting Diodes Zhi H. Quan1,2, Duc V. Dinh1, Silvino Presa1,2, Brendan Roycroft1, Ann Foley1, Mahbub Akhter1, Donagh O’Mahony1, Pleun P. Maaskant1, Marian Caliebe3, Ferdinand Scholz3, Peter J. Parbrook1,2, Brian Corbett1 1Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland 2School of Engineering, University College Cork, Ireland 3Institute of Optoelectronics, Ulm University, 89069 Ulm, Germany

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G-P-8 Nanostructuring GaN for High-Brightness LED S. Math Shivaprasad International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore- 560064, India G-P-9 Nanoscale Electrical Characterisation of GaNAs/GaN PN Junction Diode F. S. Choi1, I. Guiney1, S. Hosseini Vajargah1, S. Zhang1, J. Griffiths1, S. V. Novikov2, H. Qian3, K. B. Lee3, D. J. Wallis1, C. T. Foxon2, C. J. Humphreys1, R. A. Oliver1 1Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK 2School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK 3Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK G-P-10 Enhanced Förster Energy Transfer in hybrid organic/III-nitride grating structures Modestos Athanasiou, R. Smith, S. Ghataora, T. Wang Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK G-P-11 Efficient solar water splitting by using a GaN nano-pyramid photoelectrode Yaonan Hou, X. Yu, Z. A. Syed, S. Shen, J. Bai, T. Wang Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK G-P-12 Realisation of etching Indium-included materials in atomic layer etch process via repeated cycling of chloride formation and its plasma removal for GaN-based power device fabrications Xu Li1, Yen-Chun Fu1, Konstantinos Floros1, Sung-Jin Cho1, Dilini Hemakumara1, Ivor Guiney2, David Moran1, Iain G Thayne1 1School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT 2Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS G-P-13 Evaluation of Analytic Approach for design of Deep Class-AB Power Amplifiers in GaN Ashwani Kumar, M. Rasheduzzaman, N. Poluri, M. M. De Souza Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK G-P-14 Theoretical Modelling of 2DHG in Oxide/GaN/AlGaN/GaN Heterostructures Ashwani Kumar, Maria Merlyne De Souza Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK G-P-15 Electrical Stress Induced Surface Polarisation in AlGaN/GaN TLM Structures Khald Ahmeda1, S. Faramehr1, P. Igić1, K. Kalna1, S. Duffy2, A. Soltani3, B. Benbakhti2 1Electronic Systems Design Centre (ESDC), College of Engineering, Swansea University Bay Campus, Fabian Way, Swansea, SA1 8EN, Wales, UK 2Microelectronics Research Group, School of Engineering ,Liverpool John Moores University Byrom Street, Liverpool L3 3AF, UK 3IEMN, Lille, France

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G-P-16 Simulation Investigations on Short-Channel Effects in 4H-SiC MOSFETs Mustafa H. AlQaysi, A. Martinez, P. Igić College of Engineering, Swansea University, Swansea SA2 8PP, Wales, UK G-P-17 Deposition of MgO by Ultrasonic Spray Pyrolysis Deposition and Its Application on MgO/AlGaN/GaN Metal-Insulator-Semiconductor Ultraviolet Photodetector Han-Yin Liu, Ching-Sung Lee, Yun-Chung Yang, Wei-Hsun Lin, Ruei-Chin Huang, Guan-Jyun Liu Department of Electronic Engineering, Feng Chia University, 100, Wenhwa Rd., Taichung, Taiwan 40724, R.O.C. G-P-18 SiO2/Al2O3 Stacked Passivation Layer with Post-Deposition Annealing and Its Effects on AlGaN/GaN High-Electron-Mobility Transistors Han-Yin Liu1, Cheng-Hsuan Li2, Ching-Sung Lee1, Wei-Chou Hsu2 1Department of Electronic Engineering, Feng Chia University, 100, Wenhwa Rd., Taichung, Taiwan 40724, R.O.C. 2Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1, University Rd., Tainan, Taiwan 70101, R.O.C. G-P-19 Electron blocking by AlInN back barrier in GaN HEMT Xiaoguang He, D. G. Zhao State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

Poster Presentations – Thursday 7th July, Atrium Level 2

Symposium B: Optical Devices B-P-1 Role of the Density of States and Auger Recombination in the Design of Broad Spectral Band-Width Devices Ian G. Tooley1, D. T. D. Childs2, B. A. Harrison3, K. M. Groom1, R. A. Hogg2 1Department of Electronic & Electrical Engineering, University of Sheffield, Centre for Nanoscience & Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK 2School of Engineering, Rankine Building, University of Glasgow, Glasgow, G12 8LT, UK 3EPSRC National Centre for III-V Technologies, Department of Electronic & Electrical Engineering, University of Sheffield, Centre for Nanoscience & Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK B-P-2 Type II InAs/GaInSb mid-infrared interband cascade light emitting devices Zoe L. Bushell1, I. P. Marko1, S. J. Sweeney1, C. S. Kim2, C. D. Merritt2, W. W. Bewley2, M. V. Warren2, C. L. Canedy2, I. Vurgaftman2, J. R. Meyer2, M. Kim3 1Advanced Technology Institute & Department of Physics, University of Surrey, Guildford, GU2 7XH, UK 2Code 5613, Naval Research Laboratory, Washington DC 20375, USA 3Sotera Defense Solutions, Inc., 7230 Lee DeForest Drive, Suite 100, Columbia MD 21046

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B-P-3 Effect of multilayer structure on the characteristic properties of CdS/CdTe solar cell Ayotunde A. Ojo, H. I. Salim, I. M. Dharmadasa Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB, UK

Symposium D: Semiconductor Materials and Nanostructures D-P-1 Characterization of GaAsP nanowires grown on Si substrate Sarfraz Ali1, S. Rybchenko1, H. Liu2, Y. Zhang2, S. K. Haywood1 1School of Engineering, University of Hull, Cottingham Road Hull, HU6 7RX, UK 2Department of Electronic and Electrical Engineering, University College London, Torrington Place London WC1E 7JE, UK D-P-2 Avalanche gain and excess noise of nanowire avalanche photodiodes with 3D electric field Xiao Meng1, A. Farrell2, G. El-Howayek3, M. Hayat3, D. Huffaker1 1School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF243AA, UK 2Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA 3Center for High Technology, Materials and Electrical and Computer Engineering Department, University of New Mexico, Albuquerque, New Mexico 87106, USA D-P-3 Direct heteroepitaxy of InAs nanowires on Si substrate Shiyu Xie1, H. Kim2, W. J. Lee1, A. C. Farrell2, N. Hsieh2, J. P. R. David3, D. Huffaker1 1School of Physics and Astronomy, Cardiff University, Parade, Cardiff CF24 3AA, UK 2Department of Electrical Engineering, University of California - Los Angeles, Los Angeles, California 90095, USA 3Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK D-P-4 GaSb/GaAlSb 2DEG Devices for Magnetotransport Measurements Laura Hanks, Manus Hayne, Andrew Marshall Department of Physics, Lancaster University, UK D-P-5 First principles/NEGF study of the electron transport through doped silicon Luke Wilson, Antonio Martinez, A. Martinez-Margolles Swansea University, Bay Campus, Fabian Way, Swansea SA1 8EN, UK D-P-6 Undoped 2D Electron Systems as a Tool for Optimizing MBE Growth Ben Ramsay1, J. A. Aldous1, J. Waldie1, H. E. Beere1, L. E. Goff1,2, F. Sfigakis1, I. Farrer1,3, D. A. Ritchie1 1Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge, UK 2Department of Materials, Imperial College London, Exhibition Road, London, UK 3Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK D-P-7 The Choice of As2 vs. As4 Species and its Influence on InAs/GaAs Quantum Dot Epitaxy Peter Spencer, H. E. Beere, D. A. Ritchie Cavendish Laboratory, JJ Thomson Avenue, Cambridge CB3 0HE, UK

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D-P-8 MOVPE of InAs QDs on InP emitting around the telecom C-band Andrey B. Krysa1, J. Skiba-Szymanska2, M. Felle3, J. Huwer2, T. Müller2, R. M. Stevenson2, J. Heffernan1, A. J. Shields2 1EPSRC National Centre for III-V Technologies, University of Sheffield, Sheffield S1 3JD, UK 2Toshiba Research Europe Ltd, 208 Cambridge Science Park, Cambridge CB4 0GZ, UK 3Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK D-P-9 Quantum dot and well hybrid nanostructures for Intermediate band solar cells Baolai Liang1, Ramesh B. Laghumavarapu1, Diana L. Huffaker1,2 1California Nanosystem Institute, California University Los Angeles, CA 90095, USA 2School of Physics and Astronomy, Cardiff University, Cardiff, UK D-P-10 Development of InAs/AlAsSb/InP self-assembled quantum dots for intermediate-band solar cells Diana L. Huffaker1,2, Ramesh B. Laghumavarapu1, Baolai Liang1 1California Nanosystem Institute, California University-Los Angeles, Los Angeles, CA 90095, USA 2School of Physics and Astronomy, Cardiff University, Cardiff, UK D-P-11 Semiconductor quantum dot stabilized PANI sensor for some biological molecules Souad A. Elfeky1,2 1The National Institute of Laser Enhanced Science, Cairo University, Egypt 2University of Bath, Claverton Down, Bath BA2 7AY, UK D-P-12 Novel Structural Designs for Engineering Terahertz Emitting Resonant Tunnelling Diodes Razvan Baba1, Benjamin J. Stevens2, Brett A. Harrison3, Toshikazu Mukai4, Richard A. Hogg1 1School of Engineering, University of Glasgow, Glasgow G12 8LT, UK 2Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S3 7HQ UK 3EPSRC National Centre for III-V Technologies, University of Sheffield, Sheffield S3 7HQ, UK 4Rohm Co. Ltd., Kyoto, 615-8585 Japan D-P-13 Open-source bandstructure models of interdiffusion, impurity and exciton states for the Quantum Wells, Wires and Dots (QWWAD) simulation suite Alexander Valavanis1, Andrew Grier1, Jonathan D. Cooper1, Craig A. Evans1, Paul Harrison2 1School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK 2Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB, UK D-P-14 Characterising stress/strain and defects in semiconductor wafers using Raman spectroscopy Tim Batten, I. P. Hayward Renishaw plc, Wotton-under-Edge, Gloucestershire, GL12 8JR, UK D-P-15 Nanoscale analysis of subsurface layers via beam-exit cross-sectional polishing and scanning probe microscopy Alex Robson1,2, P. Hodgson1, J. Spiece1, O. Kolosov1,2, M. Hayne1,2 1Department of Physics, Lancaster Material Analysis Ltd, Lancaster University, Lancaster LA1 4YB, UK 2Lancaster Material Analysis Ltd, Lancaster University, Lancaster LA1 4YB, UK

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D-P-16 Wafer-scale Nanofabrication via Displacement Talbot Lithography Philip A. Shields, E. D. Le Boulbar, S. Lis, P.-M. Coulon Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, UK D-P-17 Protection of the Optical Properties of Few Layer 2D Phosphane Dylan Renaud1,2, S. Deckoff-Jones2, J. Zhang2, M. Man2, K. Dani2 1NanoJapan Program and Department of Applied Physics, New Jersey Institute of Technology, Newark, New Jersey, USA 2Dani Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, Onna, Japan D-P-18 Infrared photodetectors based on type-II InAs/GaSb superlattice material system Marie Delmas1,2,3, J. B. Rodriguez2,3, P. Christol2,3, D. Huffaker1 1School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA, UK 2University of Montpellier, IES, UMR 5214, F- 34000, Montpellier, France 3CNRS, IES, UMR 5214, F- 34000, Montpellier, France D-P-19 The Effects of Bi Inhomoegenity and Carrier Localisation on GaAs1-xBix Photoluminescence Tom Wilson1, N. P. Hylton1, R. D. Richards2, A. Mellor1, J. P. R. David2, N. J. Ekins-Daukes1 1Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BZ, UK 2Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK D-P-20 Optimising the Opto-Electronic Properties of GaAsBi Thomas B. O. Rockett1, R. D. Richards1, F. Harun1, Y. Gu2, Z. Zhou1, J. P. R. David1 1Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK 2Shanghai Institute of Microsystem and Information Technology, Shanghai, China D-P-21 InSb Based Schottky Contacts for High Frequency Application Fadwa Alshaeer1, Philip D. Buckle1, Craig P. Allford1, Dave Hayes1, Paul J. Tasker2, Mike Gasbon2, Shiyong Zhang3, Edmund Clarke3 1School of Physics and Astronomy, Cardiff University, Queen’s Buildings, The Parade, Cardiff, CF24 3AA, UK 2Institute of High Frequency and Communications Engineering, Centre for Microwave Engineering, School of Engineering, Queen’s Building, The Parade, Cardiff, CF24 3AA, UK 3EPSRC National Centre for III-V Technologies, North Campus, University of Sheffield, Sheffield S3 7HQ, UK D-P-22 1.54 µm light emitting devices based on Er-doped GaN/AlGaN multiple quantum well structures grown by metal-organic chemical vapor deposition Talal M. Al tahtamouni1, J. Li2, J. Y. Lin2, H. X. Jiang2 1Materials Science & Technology Program (MATS), College of Arts & Sciences, Qatar University, Doha 2713, Qatar 2Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA

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D-P-23 Enhancement of Rashba interaction due to the incorporation of bismuth in III-V semiconductors for Spintronic applications R. A. Simmons, S. R. Jin, S. J. Sweeney, Steve K. Clowes Advanced Technology Institute, Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, UK

Symposium F: Organics, Organic/Inorganic Hybrids and Perovskites

F-P-1 Sensing waterborne analytes with water- gated thin film transistors Talal Althagafi, Saud Algarni, Abbad Albaroot, Martin Grell Department of Physics and Astronomy, University of Sheffield, Hicks Building, Hounsfield Rd, Sheffield S3 7RH, UK F-P-2 Current enhancement due to short‐range Coulomb interaction in Quasi‐open Systems Antonio Martinez1, John R. Barker2, Riccardo Di Pietro3 1College of Engineering, Swansea University, UK 2School of Engineering, University of Glasgow, UK 3Hitachi Cambridge Laboratory, Cambridge, UK F-P-3 Solution engineering of PEDOT:PSS for the fabrication of smooth thin films via ultrasonic spray coating Jonathan Griffin1, Anthony J. Ryan2, David G. Lidzey1 1Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK 2Department of Chemistry, University of Sheffield, Sheffield S3 7HF, UK F-P-4 Additive Manufacturing of Hierarchical Structured Dye-Sensitized Solar Cells Andrew Knott1, Oleg Makarovsky1, James O’Shea1, Chris Tuck2, Yupeng Wu2 1School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, UK 2Faculty of Engineering, The University of Nottingham, Nottingham NG7 2RD, UK F-P-5 Fabricating polymer light emitting diodes via ultrasonic spray-coating in air Thomas Routledge, Alastair Buckley Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK F-P-6 The Operational Stability of MAPI Perovskite Solar Cells Christopher Bracher, Benjamin Freestone, David G. Lidzey Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK F-P-7 Blending conjugated polymer with halide perovskite as light absorber for solar cells to enhance stability of devices Heming Wang, Yaqub Rahaq, Vikas Kumar Materials & Engineering Research Institute, Sheffield Hallam University, City Campus, Howard Street, Sheffield S1 1WB, UK

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