TR 907F-740-14 - MilimSyscon · 2017. 7. 14. · dv dt t t T t t t t T q q D q q j q q q q 1 1 1 1 where: t q1 is turn-off time at standard conditions, see section "Characteristics"

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5STF 07D1414 Old part no. TR 907F-740-14

Medium Frequency Thyristor

Properties Key Parameters

Amplifying gate

VDRM, VRRM = 1 400 V High operational capability ITAV = 736 A Optimized turn-on and turn-off parameters ITSM = 12.0 kA High operating frequency VTO = 1.683 V

Applications rT = 0.274 m Power switching applications tq = 12.5 µs

Types

VRRM, VDRM

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1 400 V

1 200 V

Conditions:

Tj = -40 ÷ 125 °C, half sine waveform,

f = 50 Hz, note 1

Mechanical Data

Fm Mounting force 10 ± 2 kN

m Weight 0.26 kg

DS Surface creepage distance

25 mm

Da Air strike distance

14 mm

Fig. 1 Case

ABB s.r.o.

Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic

tel.: +420 261 306 250, http://www.abb.com/semiconductors

http://www.abb.com/semiconductors

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ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic

ABB s.r.o. reserves the right to change the data contained herein at any time without notice

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Maximum Ratings Maximum Limits Unit

VRRM

VDRM

Repetitive peak reverse and off-state voltage

Tj = -40 125 °C, note 1

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1 400

1 200

V

ITRMS RMS on-state current

Tc = 70 °C, half sine waveform, f = 50 Hz

1 156 A

ITAVm Average on-state current

Tc = 70 °C, half sine waveform, f = 50 Hz

736 A

ITSM Peak non-repetitive surge

half sine pulse, VR = 0 V

tp = 10 ms

tp = 8.3 ms

12 000

12 800

A

I2t Limiting load integral

half sine pulse, VR = 0 V

tp = 10 ms

tp = 8.3 ms

720 000

682 000

A2s

(diT/dt)cr Critical rate of rise of on-state current

IT = ITAVm, half sine waveform, f = 50 Hz,

VD = 2/3 VDRM, tr = 0.3 µs, IGT = 2 A

800 A/µs

(dvD/dt)cr Critical rate of rise of off-state voltage

VD = 2/3 VDRM

1 000 V/µs

PGAVm Maximum average gate power losses 3 W

IFGM Peak gate current 10 A

VFGM Peak gate voltage 12 V

VRGM Reverse peak gate voltage 10 V

Tjmin - Tjmax Operating temperature range -40 ÷ 125 °C

Tstgmin -Tstgmax

Storage temperature range -40 ÷ 125 °C

Unless otherwise specified Tj = 125 °C

Note 1: De-rating factor of 0.13% VRRM or VDRM per °C is applicable for Tj below 25 °C

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Characteristics Value Unit

min. typ. max.

VTM Maximum peak on-state voltage

ITM = 1 500 A

2.100

V

VT0 Threshold voltage 1.683 V

rT Slope resistance

IT1 = 1 162 A, IT2 = 3 487 A

0.274 m

IDM Peak off-state current

VD = VDRM

70 mA

IRM Peak reverse current

VR = VRRM

70 mA

tgd Delay time

Tj = 25 °C, VD = 0.4 VDRM, ITM = ITAVm,

tr = 0.3 µs, IGT = 2 A

2.0 µs

tq1 Turn-off time

IT = 500 A, diT/dt = -50 A/µs, VR = 100 V, VD = 2/3 VDRM,

dvD/dt = 50 V/µs

12.5

µs

Qrr Recovery charge

the same conditions as at tq1

160 µC

IrrM Reverse recovery current

the same conditions as at tq1

100 A

IH Holding current Tj = 25 °C

Tj = 125 °C

250

150

mA

IL Latching current Tj = 25 °C

Tj = 125 °C

1 500

1 000

mA

VGT Gate trigger voltage

VD = 12V, IT = 4 A

Tj = - 40 °C

Tj = 25 °C

Tj = 125 °C

0.25

4

3

2

V

IGT

Gate trigger current

VD = 12V, IT = 4 A

Tj = - 40 °C

Tj = 25 °C

Tj = 125 °C

10

1000

500

300

mA

Unless otherwise specified Tj = 125 °C

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Thermal Parameters Value Unit

Rthjc Thermal resistance junction to case

double side cooling

32.0 K/kW

anode side cooling 52.0

cathode side cooling 83.0

Rthch Thermal resistance case to heatsink

double side cooling

10.0 K/kW

single side cooling 20.0

Transient Thermal Impedance

Analytical function for transient thermal impedance

5

1

))/exp(1(

i

iithjc tRZ

Conditions:

Fm = 10 ± 2 kN, Double side cooled

Correction for periodic waveforms

180° sine: add 2.3 K/kW

180° rectangular: add 3.1 K/kW



i 1 2 3 4 5

i ( s ) 0.4857 0.2162 0.0762 0.0043 0.0006

Ri( K/kW ) 13.07 8.03 8.20 2.57 0.13

0

5

10

15

20

25

30

35

0.001 0.01 0.1 1 10

Square wave pulse duration t d ( s )

Tra

nsie

nt

therm

al im

ped

an

ce ju

ncti

on

to c

ase Z

thjc (

K/k

W )

Fig. 2 Dependence transient thermal impedance junction

to case on square pulse

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On-State Characteristics

0

1000

2000

3000

4000

5000

0 1 2 3 4V T ( V )

I T (

A )

125 °CT j = 25 °C

Fig. 3 Maximum on-state characteristics

Gate Trigger Characteristics

0

1

2

3

4

5

6

0 0.2 0.4 0.6 0.8 1I G ( A )

VG (

V )

+125 °C

+25 °C

-40 °C

I GTmin

VG

Tm

in

DC

0

2

4

6

8

10

12

14

0 2 4 6 8 10 12I G ( A )

VG

( V

)

DC

10 ms

1 ms

50 µs

V GTmax

I GTmax

Fig. 4 Gate trigger characteristics Fig. 5 Maximum peak gate power loss

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Surge Characteristics

0

5

10

15

20

25

30

1 10 100t ( ms )

I TS

M (

kA

)

0

0.2

0.4

0.6

0.8

1

1.2

i2

dt (

10

6 A

2s)

I TSM

i 2 dt

0

2

4

6

8

10

12

14

1 10 100

Number n of cycles at 50 Hz

I TS

M (

kA

)

V R = 0 V

V R £ 0.5 V DRM

Fig. 6 Surge on-state current vs. pulse length,

half sine wave, single pulse,

VR = 0 V, Tj = Tjmax

Fig. 7 Surge on-state current vs. number

of pulses, half sine wave, Tj = Tjmax

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Power Loss and Maximum Case Temperature Characteristics

0

500

1000

1500

0 200 400 600 800I TAV ( A )

PT (

W ) y = 30° 60° 90° 120°

180°

DC

0

500

1000

1500

0 200 400 600 800

I TAV ( A )

PT

( W

) y = 30° 60° 90° 120°

180°

270°

DC

Fig. 8 On-state power loss vs. average on-state

current, sine waveform, f = 50 Hz, T = 1/f

Fig. 9 On-state power loss vs. average on-state

current, square waveform, f = 50 Hz, T = 1/f

60

70

80

90

100

110

120

130

0 200 400 600 800

I TAV ( A )

TC

( °

C )

180° 60° 90° 120° y = 30°

DC

60

70

80

90

100

110

120

130

0 200 400 600 800I TAV ( A )

TC

( °

C )

180°

DC

270°

120° 90° 60° y = 30°

Fig. 10 Max. case temperature vs. aver. on-state

current, sine waveform, f = 50 Hz, T = 1/f

Fig. 11 Max. case temperature vs. aver. on-state

current, square waveform, f = 50 Hz, T = 1/f

Note 2: Figures number 8 11 have been calculated without considering any turn-on and turn-off losses.

They are valid for f = 50 or 60 Hz operation.

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Turn-off Time, Parameter Relationship

Maximum values of turn-off time at application

specific conditions are given by using this formula:

)/()/()( dtdit

tdtdv

t

tT

t

ttt T

q

qD

q

qj

q

qqq

1111

where:

1qt is turn-off time at standard conditions,

see section "Characteristics"

)( jq

qT

t

t

1

is factor to be taken from fig. 12

)/( dtdvt

tD

q

q

1


)/( dtdit

tT

q

q

1


0.50

0.60

0.70

0.80

0.90

1.00

25 50 75 100 125T j ( °C )

t q /

tq

1 (

- )

Fig. 12 Normalised maximum turn-off time

vs. junction temperature

0.80

0.90

1.00

1.10

1.20

1.30

1.40

1.50

0 200 400 600 800 1000dv D /dt ( V/µs )

t q /

tq

1 (

- )

0.80

1.00

1.20

1.40

1.60

0 200 400 600 800 1000- di T /dt ( A/µs )

t q /

tq

1 (

- )


vs. rate of rise of off-state voltage


vs. rate of fall of on-state current

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Turn-on Characteristics

0

6000

10 30t

i G (

t), v

T (t)

, i

T (t)

0

2500

di T /dt

t gd

v T (t)

i T (t)

I TM

0.5 I TM

0.1 I TM

V D

0.9 V D

i G (t) 0.1 V D

t gt t d

0.0

0.1

0.2

0.3

0.4

0.5

0 200 400 600 800 1000di T /dt ( A/µs )

Wo

n ( J

)

Fig. 15 Typical waveforms and definition of symbols

at turn-on of a thyristor

Fig. 16 Maximum turn-on energy per pulse vs.

rate of rise on-state current, Tj = Tjmax

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Turn-off Characteristics

-600

10

t

vT

(t)

, i

T (t)

-600

- di T /dt

t q

v T (t)

i T (t)

I rrM V R

Q rr

I TM

V D

dv D /dt

10

100

1000

10000

10 100 1000- di T /dt ( A/µs )

Qrr

( µ

C )

I TM = 2000 A1000 A

500 A

Fig. 17 Typical waveforms and definition of symbols

at turn-off of a thyristor, inductive switching

without RC snubber

Fig. 18 Max. recovered charge vs. rate of fall

on-state current, trapezoid pulse,


10

100

1000

10 100 1000- di T /dt ( A/µs )

I rrM

( A

)

I TM = 2000 A

1000 A

500 A

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 200 400 600 800 1000- di T /dt ( A/µs )

Wo

ff ( J

)

V R = 2/3 V DRM

500 V

200 V

100 V

Fig. 19 Max. reverse recovery current vs.

rate of fall on-state current, trapezoid pulse,


Fig. 20 Maximum turn-off energy per pulse vs.

rate of fall on-state current, trapezoid pulse,

inductive switching without RC snubber,

ITM = 2 000 A, Tj = Tjmax

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Frequency Ratings

0

200

400

600

800

1000

10 100 1000 10000

f ( Hz )

I TA

V (

A )

180°

270°

120°

90°

60°

y = 30°

0

1000

2000

3000

4000

5000

6000

10 100 1000 10000

f ( Hz )

I TM (

A )

180°

270°

120°

90°

60°

y = 30°

Fig. 21 Average on-state current vs. frequency,

trapezoid waveform, TC = 70 °C,

diT/dt = 100 A/µs, VR = 100 V

Fig. 22 Maximum on-state current vs. frequency,


diT/dt = 100 A/µs, VR = 100 V

0

200

400

600

800

1000

10 100 1000 10000

f ( Hz )

I TA

V (

A )

180°

270°

120°

90°

60°

y = 30°

0

1000

2000

3000

4000

5000

6000

10 100 1000 10000

f ( Hz )

I TM (

A )

180°

270°

120°

90°

60°

y = 30°



diT/dt = 100 A/µs, VR = 2/3 VDRM




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Frequency Ratings

0

200

400

600

800

1000

10 100 1000 10000

f ( Hz )

I TA

V (

A )

180°

270°

120°

90°

60°

y = 30°

0

1000

2000

3000

4000

5000

6000

10 100 1000 10000

f ( Hz )

I TM (

A )

180°

270°

120°

90°

60°

y = 30°



diT/dt = 500 A/µs, VR = 100 V



diT/dt = 500 A/µs, VR = 100 V

0

200

400

600

800

1000

10 100 1000 10000

f ( Hz )

I TA

V (

A )

180°

270°

120°

90°

60°

y = 30°

0

1000

2000

3000

4000

5000

6000

10 100 1000 10000

f ( Hz )

I TM (

A )

180°

270°

120°

90°

60°

y = 30°







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Frequency Ratings

0

200

400

600

800

1000

10 100 1000 10000

f ( Hz )

I TA

V (

A )

180°

270°

120°

90°

60°

y = 30°

0

1000

2000

3000

4000

5000

6000

10 100 1000 10000

f ( Hz )

I TM (

A )

180°

270°

120°

90°

60°

y = 30°



diT/dt = 100 A/µs, VR = 100 V



diT/dt = 100 A/µs, VR = 100 V

0

200

400

600

800

1000

10 100 1000 10000

f ( Hz )

I TA

V (

A )

180°

270°

120°

90°

60°

y = 30°

0

1000

2000

3000

4000

5000

6000

10 100 1000 10000

f ( Hz )

I TM (

A )

180°

270°

120°

90°

60°

y = 30°







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Frequency Ratings

0

200

400

600

800

1000

10 100 1000 10000

f ( Hz )

I TA

V (

A )

180°

270°

120°

90°

60°

y = 30°

0

1000

2000

3000

4000

5000

6000

10 100 1000 10000

f ( Hz )

I TM (

A )

180°

270°

120°

90°

60°

y = 30°



diT/dt = 500 A/µs, VR = 100 V



diT/dt = 500 A/µs, VR = 100 V

0

200

400

600

800

1000

10 100 1000 10000

f ( Hz )

I TA

V (

A )

180°

270°

120°

90°

60°

y = 30°

0

1000

2000

3000

4000

5000

6000

10 100 1000 10000

f ( Hz )

I TM (

A )

180°

270°

120°

90°

60°

y = 30°







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Notes:

Documents

TR 907F-740-14 - MilimSyscon · 2017. 7. 14. · dv dt t t T t t t t T q q D q q j q q q q 1 1 1 1 where: t q1 is turn-off time at standard conditions, see section "Characteristics"