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Toshiba...Ku-Band, 120-W Power Amplifier Using Gallium Nitride FETs Hitoshi Sumi# Hiroaki Takahashi#, Tomohide Soejima#, and Ryo Mochizuki #Toshiba Corporation, Corporate Manufacturing

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Page 1: Toshiba...Ku-Band, 120-W Power Amplifier Using Gallium Nitride FETs Hitoshi Sumi# Hiroaki Takahashi#, Tomohide Soejima#, and Ryo Mochizuki #Toshiba Corporation, Corporate Manufacturing
Page 2: Toshiba...Ku-Band, 120-W Power Amplifier Using Gallium Nitride FETs Hitoshi Sumi# Hiroaki Takahashi#, Tomohide Soejima#, and Ryo Mochizuki #Toshiba Corporation, Corporate Manufacturing
Page 3: Toshiba...Ku-Band, 120-W Power Amplifier Using Gallium Nitride FETs Hitoshi Sumi# Hiroaki Takahashi#, Tomohide Soejima#, and Ryo Mochizuki #Toshiba Corporation, Corporate Manufacturing
Page 4: Toshiba...Ku-Band, 120-W Power Amplifier Using Gallium Nitride FETs Hitoshi Sumi# Hiroaki Takahashi#, Tomohide Soejima#, and Ryo Mochizuki #Toshiba Corporation, Corporate Manufacturing