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1. GATE2. DRAIN3. SOURCE
GENERAL DESCRIPTION The CJP50P06S uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
FEATURE Advanced trench process technology
Reliable and rugged
High density cell design for ultra low On-Resistance
APPLICATION Power management in notebook computer
Portable equipment and battery powered systems
EQUIVALENT CIRCUIT
V(BR)DSS RDS(on)TYP ID -60V -50A25mΩ@-10V
1 Rev. - 1.0www.jscj-elec.com
MARKING
P50P06S = Device code Solid dot = Green molding compound device, if none, the normal deviceXXXX = Code
MAXIMUM RATINGS ( Ta=25 unless otherwise noted )
Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID -50 A
Pulsed Drain Current IDM -200 A
Single Pulsed Avalanche Energy EAS 196 mJ
Power Dissipation PD W
Thermal Resistance from Junction to Ambient RθJA 62.5 /W
Thermal Resistance from Junction to Case RθJC /W
Operating Junction and Storage Temperature Range
①
②③
①
①
-55~+150TJ ,Tstg
95
1.31
31 2
TO-220-3L-C
P50P06SXXXX
1 2 3
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP50P06S P-Channel Power MOSFET
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
2www.jscj-elec.com Rev. - 1.0
Parameter Symbol Test Condition Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA -60 V
Zero gate voltage drain current IDSS VDS =-48V,VGS =0V
1.0
Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA
On characteristics
Gate-threshold voltage VGS(th) VDS =VGS, ID =-250µA -1.0 -2.2 -3.0 V
VGS =-10V, ID =-20A 25 mΩStatic drain-source on-sate resistance RDS(on)
Dynamic characteristics
Input capacitance Ciss 4500
Output capacitance Coss 705
Reverse transfer capacitance Crss
VDS =-25V,VGS =0V,
f =1MHz pF
Switching characteristics
Total gate charge Qg
Gate-source charge Qgs
Gate-drain charge Qgd
VGS=-10V,
VDS=-30V, ID=-20A nC
Turn-on delay time td(on)
Turn-on rise time tr
Turn-off delay time td(off)
Turn-off fall time tf
ns
Drain-Source Diode Characteristics
Drain-source diode forward voltage VSD VGS =0V, IS=-20A -1.2 V
Continuous drain-source diode forward
current IS -50 A
Pulsed drain-source diode forward current ISM -200 A
Notes:
MOSFET ELECTRICAL CHARACTERISTICS aT =25 unless otherwise specified
30
100 µA
TJ =25
TJ =125
④
④⑤
④⑤
④
①
②
VDD=-30V,RG=3Ω
RL=1.5Ω,VGS=-10V,
Rg f =1MHz Ω Gate resistance 5.7
515
72
15
17
16
18
39
44
7500
980
760
130
29
32
30
35
78
87
1.TC=25 Limited only by maximum temperature allowed.2.PW≤10μs, Duty cycle≤1%.3.EAS condition: VDD=-15V,VGS=-10V, L=0.5mH, Rg=25Ω Starting TJ = 25°.4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.5.Guaranteed by design, not subject to production.
0 -1 -2 -3 -4 -5 -6 -7 -80
-10
-20
-30
-40
-50
25 50 75 100 1250
-1
-2
-3
-4
0 -2 -4 -6 -8 -10 -12 -140
20
40
60
80
100
-5 -10 -15 -205
10
15
20
25
30
35
40
0 -1 -2 -3 -4 -50
-10
-20
-30
-40
-50
TJ=25
DR
AIN
CU
RR
ENT
I D
(A
)
GATE TO SOURCE VOLTAGE VGS (V)
Transfer Characteristics
VDS=-15VPulsed
Threshold Voltage
THR
ESH
OLD
VO
LTAG
E
V TH
(V)
JUNCTION TEMPERATURE TJ ( )
TJ=25Pulsed
TJ=125
TJ=25
RDS(ON)
—— VGS
ON
-RES
ISTA
NC
E
RD
S(O
N)
(m
)
GATE TO SOURCE VOLTAGE VGS (V)
PulsedID=-20ATJ=25
Pulsed
ON
-RES
ISTA
NC
E
RD
S(O
N)
(m
)
DRAIN CURRENT ID (A)
ID
——RDS(ON)
VGS= -10V
VGS=-10V,-8V,-6V
VGS=-4V
VGS=-3.5V
Output Characteristics
DR
AIN
CU
RR
ENT
I D
(A
)
DRAIN TO SOURCE VOLTAGE VDS (V)
TJ=25Pulsed
TJ=125
-3
TJ=25
Pulsed
-10
-1
-0.1
-50
-1 -2
-15
-0.1
VSD
SOU
RC
E C
UR
REN
T
I S (A
)
SOURCE TO DRAIN VOLTAGE VSD (V)
IS ——
Typical Characteristics
3www.jscj-elec.com Rev. - 1.0
4 Rev. - 1.0www.jscj-elec.com
TO-220-3L-C Package Outline Dimensions
Min. Max. Min. Max.A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054c 0.330 0.650 0.013 0.026c1 1.200 1.400 0.047 0.055D 9.910 10.250 0.390 0.404E 8.950 9.750 0.352 0.384
E1 12.650 12.950 0.498 0.510e
e1 4.980 5.180 0.196 0.204F 2.650 2.950 0.104 0.116H 7.900 8.100 0.311 0.319h 0.000 0.300 0.000 0.012L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128VΦ 3.400 3.800 0.134 0.150
7.500 REF. 0.295 REF.
Symbol Dimensions In Millimeters Dimensions In Inches
0.100 TYP.2.540 TYP.