JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

D882 TRANSISTOR (NPN)

FEATURES Power dissipation

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 40 V

VCEO Collector-Emitter Voltage 30 V

VEBO Emitter-Base Voltage 6 V

IC Collector Current -Continuous 3 A

PC Collector Power Dissipation 0.5 W

TJ Junction Temperature 150 ℃

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V

Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V

Collector cut-off current ICBO VCB= 40V, IE=0 1 µA

Collector cut-off current ICEO VCE= 30V, IB=0 10 µA

Emitter cut-off current IEBO VEB= 6V, IC=0 1 µA

hFE(1) VCE=2V, IC= 1A 60 400 DC current gain

hFE(2) VCE=2V, IC= 100mA 32

Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A 0.5 V

Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A 1.5 V

Transition frequency fT VCE= 5V , Ic=0.1A

f =10MHz 50 MHz

CLASSIFICATION OF hFE(1)

Rank R O Y GR

Range 60-120 100-200 160-320 200-400

SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER

RӨJA

Thermal Resistance from Junction

to Ambient

250 ℃/W

℃ Tstg Storage Temperature -55~150

www.cj-elec.com 1 A,Jun,2014www.cj-elec.com E,Nov,2015

0 300 600 900 12001

10

100

1000

1 10 100 1000100

1000

0 25 50 75 100 125 1500

100

200

300

400

500

600

1 10 100 10001

10

100

1000

1 10 100 100010

100

1000

0.1 1 1010

100

0 1 2 3 4 5 6 7 80.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

COMMON EMITTERVCE= 2V

VBEIC ——

BASE-EMMITER VOLTAGE VBE (mV)

CO

LLE

CTO

R C

UR

RE

NT

I C

(m

A)

T a=2

5℃

T a=1

00℃

3000

β=10

ICVBEsat ——

BASE

-EM

ITTE

R S

ATU

RAT

ION

VOLT

AGE

V B

Esa

t (m

V)

COLLECTOR CURREMT IC (mA)

Ta=100 ℃

Ta=25℃

3000

PC —— Ta

AMBIENT TEMPERATURE Ta ( )℃

CO

LLEC

TOR

PO

WER

DIS

SIPA

TIO

NP C

(m

W)

Ta=100 ℃

Ta=25℃

β=10

ICVCEsat ——

CO

LLE

CTO

R-E

MIT

TER

SA

TUR

ATI

ON

VOLT

AGE

V C

Esa

t (m

V)

COLLECTOR CURREMT IC (mA)

3000

2000

IChFE ——

Ta=100℃

Ta=25℃

DC

CU

RR

EN

T G

AIN

h

FE

COLLECTOR CURRENT IC (mA)

COMMON EMITTERVCE= 2V

3000

f=1MHzIE=0/IC=0Ta=25 ℃

VCB/VEBCob/Cib ——

Cob

Cib

REVERSE VOLTAGE V (V)

CAP

ACIT

ANC

E

C

(pF)

20

500

Static Characteristic

COMMON EMITTERTa=25 ℃10mA 9mA

8mA7mA

6mA

5mA

4mA

3mA

2mA

IB=1mA

CO

LLE

CTO

R C

UR

RE

NT

I C

(A

)

COLLECTOR-EMITTER VOLTAGE VCE (V)

Typical Characteristics

www.cj-elec.com 2 A,Jun,2014www.cj-elec.com E,Nov,2015

Min Max Min MaxA 1.400 1.600 0.055 0.063b 0.320 0.520 0.013 0.020

b1 0.400 0.580 0.016 0.023c 0.350 0.440 0.014 0.017D 4.400 4.600 0.173 0.181D1E 2.300 2.600 0.091 0.102

E1 3.940 4.250 0.155 0.167e

e1L 0.900 1.200 0.035 0.047

SymbolDimensions In Millimeters Dimensions In Inches

1.550 REF. 0.061 REF.

1.500 TYP. 0.060 TYP.3.000 TYP. 0.118 TYP.

SOT-89-3L Package Outline Dimensions

SOT-89-3L Suggested Pad Layout

www.cj-elec.com 3 A,Jun,2014www.cj-elec.com E,Nov,2015

SOT-89-3L Tape and Reel

www.cj-elec.com 4 A,Jun,2014www.cj-elec.com E,Nov,2015