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Thin-film, wide-angle, design-tunable, selective absorber from near UV to far infrared
Janardan Natha, Douglas Maukonena, Evan Smitha, Pedro Figueiredoa, Guy Zummoa, Deep Panjwania, Robert E. Pealea, Glenn Boremanb, Justin W. Clearyc, Kurt Eyinkd
aDepartment of Physics, University of Central Florida, Orlando FL 32816 bDepartment of Physics and Optical Science, University of North Carolina at Charlotte, Charlotte,
NC 28223 cAir Force Research Laboratory, Sensors Directorate, Wright Patterson AFB OH 45433
dAir Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson AFB OH 45433
ABSTRACT
We experimentally demonstrate a structured thin film that selectively absorbs incident electromagnetic waves in discrete bands, which by design occur in any chosen range from near UV to far infrared. The structure consists of conducting islands separated from a conducting plane by a dielectric layer. By changing dimensions and materials, we have achieved broad absorption resonances centered at 0.36, 1.1, 14, and 53 microns wavelength. Angle-dependent specular reflectivity spectra are measured using UV-visible or Fourier spectrometers. The peak absorption ranges from 85 to 98%. The absorption resonances are explained using the model of an LCR resonant circuit created by coupling between dipolar plasma resonance in the surface structures and their image dipoles in the ground plane. The resonance wavelength is proportional to the dielectric permittivity and to the linear dimension of the surface structures. These absorbers have application to thermal detectors of electromagnetic radiation.
Keywords: Selective absorbers, metamaterial absorber, plasmonics, near-IR, Long wave infra-red (LWIR), far-IR.
1. INTRODUCTION
Wavelength-selective absorbers have a wide range of applications including microbolometers 1, thermal imaging 2, 3, coherent thermal emitters 4, solar cells 5, thermal photovoltaic solar energy conversion 6,7 and refractive index sensing 8,9. Resonant plasmonic and metamaterial structures are being investigated widely and are reported to produce perfect absorption up to 99% in the visible 10, near- and mid- infrared 11, 12, and terahertz frequencies13. The resonance frequency depends on the size of the structures14. The resonant absorption typically has bandwidth less than 12% of the center frequency14. Both experimental and numerical studies suggest that 99.99% absorption can be achieved with these kinds of absorbers in any frequency range, from optical to terahertz 3, 4, 10, 13. The resonance absorption occurs by excitation of localized magnetic and electric dipoles10, 13. Structures may be designed to be polarization independent and omnidirectional12 - 15. These absorbers have been studied both by simulations and experiments. Analytic theory has been less extensively applied, though it promises simple design rules and an understanding of underlying physics. In this paper we study these absorbers experimentally and interpret the spectra in terms of a simple analytic model. Fabrication is by standard photolithography and is compatible with MEMS processing. Silicon dioxide is the chosen dielectric for compatibility with such processing, although silicon dioxide has strong absorption and dispersion near 10 micron wavelengths.
2. THEORITICAL CONSIDERATIONS
Figure 1(a) presents a schematic of the considered structure. Surface conductors are taken to be squares arranged in a checkerboard pattern. The squares are situated on top of a dielectric layer, which itself is supported by a metal ground plane. Gold is taken as the conductor material and silicon dioxide as the dielectric spacer. Simulations 12, 13, 16 demonstrate excitation of fundamental and higher order resonances and corresponding absorption of the driving fields. In the case of the fundamental, the incident electric field excites an electric dipole in the gold square. An image dipole is excited in the gold film under the spacer material. The driven current sloshing back and forth between the ends of the
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square, with the ends of th
where is thand size of thmedia used indue to absorwavelength t
where i
Figu
For our depocoefficient top of 10 nmregions are ta
Figuresreso
Resonant wa and /
of intersectioand 7.73 µmsolved to giv
opposite polarhe square. The
he mutual parahe absorber , n our work, the
rption and dispto be
is the refractive
ure 1. (a) Schema
osited SiO2 lay experimentall
m Cr on 150 nmaken from refe
ure 2. Black aspectively as a fnance solutions
avelengths are for one of th
on. For this samm, respectivelyve single resona
rity in the grouresonant frequ
allel plate indupermeability, e relative permpersion. From
e index of the s
atic diagram of s
yers in the wavly using a VASm of gold . Trences [17] and
nd red curves function of wavas 14.26, 9.07, a
found by solvhe samples fabmple, 3 resonan. In the UV, vance waveleng
und plane, canuency is given
uctance and iand dielectric
meability has thm Eq. (1) and t
spacer material
selective infrared
velength range SE IR ellipsom
These data are d [18].
represent expevelength for SiOand 7.73 µm.
ving equation (bricated withounces are foundvisible or far igths.
n be consideredby13 = √√
is the capacitapermittivity ac
he value unity. he expressions
=
l.
d absorber. (b) A
5-20 microns, meter for a 1.4
presented in F
erimentally mea2. The blue line
(2), which is eut the final arrad, which we deinfra-red region
d as charging a
ance, which deccording to = The permittivs for and ,
Absorbers in UV
we obtained tmicron layer o
Fig. 2. Values
asured refractive is a plot of /easily done gray of gold squ
enote by , whn where dispe
and dischargin
epend on the th= and vity of SiO2 is c, we find the f
V and NIR forme
the refractive iof electron beafor the UV-Vi
ve index and/ , where =2
aphically. Figuuares. Resonanhere i= 1, 2, 3. ersion is slight
ng capacitors lo
hickness of die= /2complex in thefundamental re
ed by gold nano-
index and abam evaporated isible and far i
d absorption c.8µm. Intersect
ure 2 presents nces occur at th
These are 14.2t, equation 2 i
ocated at
(1)
electric . For all
e infrared esonance
(2)
-islands.
bsorption SiO2 on
infra-red
oefficient tions give
plots of he points 26, 9.07, s simply
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We fabricatesquares weredeposited byeither plasmafigure 3 werewith evaporathe squares asurface squar
Table 1. Abso
Active rNear-UVNear IR (Long-waFar-IR(30
For the near(Fig. 1.b). Wgold, a 10 nmoptically thinfor 90 minutand absorber
Figuwith
LWIR Reflecreflectivity mDA8 spectrousing a Caryincidence froangle12, 13, 15.smooth gold absorptance smaller than
3.1 LW-IR
Reflectance Figure 4. ThLWIR sampl
ed absorbers be patterned by py electron beama enhanced chee fabricated onated SiO2, a 10 and their periores for compar
orber parameters
region V(0.3-0.4µm) (1-3µm)
ave-IR (8-20µm0-80µm)
-UV to near-IRWe sequentiallym Cr sticking n and discontintes. Particle sizr size for differ
ure 3. Confocal h 10 µm size squ
ctivity was memode with angmeter at near ny 500i spectroom 20 to 50 d. Reflectance film. Transmi
can be founthe wavelength
and far-IR ab
spectra for farhe samples witle, the absorpti
3
by two methodphotolithograp
m evaporation emical vapor dn the SiO2 film
nm layer of Cod were determison.
s
SiO230nm180n
m) 1.4μm2.2μm
R region, randy deposited by layer, and SiO
nuous gold filmze-distributionsrent samples.
microscope imauares and periodi
easured using ales of incidencnormal incidenometer with a deg. The reflec
is obtained ttance throughnd from = 1h of incident li
bsorbers
r IR and LWIRthout squares on that appear
3. EXPERIM
ds depending ophy and convenon a glass or S
deposition or byby standard ph
r was also depmined by conf
2 thickness, m nm m m
domly distributelectron beam
O2. Then, an om becomes irres were determi
ge of the sampleicity 20 µm.
a PerkinElmer ce spanning 19nce with 6 mic
variable anglctivity for theby dividing th
h the sample is 1 , assuminight.
R samples, witon their surfacs when the squ
MENTS AN
on the wavelenntional metal liSi substrate. Ty electron beamhotolithographosited before dfocal microsco
Absor71.5nm282.3n2.8μm10μm
ted gold nano-m evaporation ooptically thin fiegularly shapedined using Ima
e surface (a) with
Spectrum One9 to 31 degreesron Mylar beale specular refse structures ihe raw reflectzero because t
ng scattering t
th and withoutce (black curvuares are presen
D RESULTS
ngth region. ift-off (Fig. 1.aThen, SiO2 wam evaporation.hy, e-beam evadeposition of Sopy. Samples w
rber size, m nm
m
-islands were fon a Si wafer afilm of gold wad islands of goageJ19. Table 1
h 2.8 µm size sq
e FTIR spectros. Far-IR refle
am splitter. UVflectivity acceis supposed toted power specthe gold film ato be negligibl
t gold squares ves) have the hnt overlaps the
S
For the mid- a). A 150 nm tas deposited as. Square patter
aporation, and SiO2 as a stickinwere similarly
Predict348nm 1241nm14.26, 962.3μm
formed by anna 10 nm Cr sticas deposited byold nano-discs 1 represents die
quares and period
ometer with mectivity was meV-Vis-NIR refl
ssory (VARSAo be fairly indctrum with thaat the bottom isle because the
on the top suhighest reflecte native absorpt
to far-IR regithick layer of gs a dielectric sprns of gold as slift-off. For theng layer. Dime
y prepared wit
ted absorptio
m 9.07, 7.73µm
nealing thin gocking layer, 15y DC sputterinon annealing a
electric layer t
dicity 7.5 µm an
microscope acceeasured by a B
flectivity was mA) covering a
dependent of inat of an opticas optically thic
e particle size
urface, are prestivity baseline.tion bands of t
on, gold gold was pacer by shown in e sample ension of thout the
on
old films 50 nm of ng. This at 300 C thickness
nd (b)
essory in BOMEM measured angles of ncidence
ally thick ck. Thus, is much
sented in For the
the oxide
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dielectric, which occur as a sharp peak at 6.2 microns, a partially resolved doublet at 8 and 8.7 microns, a stronger partially resolved doublet at 9.7 and 10.7 microns, and a clear band at 12.5 microns. Significantly, the oxide reference sample lacks any significant absorption bands in the wavelength range 12-20 microns.
Figure 4. LWIR (left) and far-IR (right) reflectance spectra. Black lines are spectra from samples without squares. Black dots represent theoretically calculated resonances. The peak LWIR and far-IR absorptances are 98% and 95%, respectively.
When the squares are added to the surface of the LWIR sample, the spectrum changes significantly. A new strong band appears at 7 microns. The unresolved bands 8 and 8.7 microns both deepen, but their relative strength changes dramatically. The band at 9.7 microns actually gets weaker, while its partner at 10.7 microns becomes much stronger with a shoulder appearing at 11.2 microns. Most significantly, a very strong and broad band appears at 14.3 microns, where there was no absorption before. Symbols indicate the wavelength positions of the three fundamental resonances determined graphically in Fig. 2. There is fair agreement for the predicted resonances =14.26 and =7.73 microns and the observed bands at 14.3 and 8 microns, The predicted =9.07 micron band does not account for the reduced absorption at 9.7 microns, unless for some reason this resonance has actually blue shifted in contrast to the other two. The weakening of absorption strength at 9.7 micron due to the reduction in the absorption by SiO2 is caused by shadowing from the gold squares. None of the predicted resonances corresponds to the broad band at 6.9 microns, but we note that this wavelength is about half that of the observed band at 14.3 micron and may be a harmonic.
Figure 5. Reflectivity spectra for several far-IR samples for (left) different dielectric thicknesses at constant gold thickness, and (left) different gold square thicknesses at constant dielectric thickness.
In Figure 4 (right), the reflectivity spectrum for the far-IR sample without squares confirms the absence of significant absorption for SiO2 in the wavelength range 30-80 microns. When squares are added, a strong band with 95% peak absorption appears centered at 53 microns wavelength. According to Eq. 2, the resonance should appear at =62 micron wavelength using = 2 for SiO2
18. Ref [18] reported indices of SiO2 from different papers, and it varies in the range of 1.96 to 2.10 in 50-60 micron range. It is reported that the refractive index and absorption index varies with deposition
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methods andto the uncerta
Figusput
Figure 5 (leftsame 150 nmincreases froinductance cis reduced anenergy inside
Figure 5(righdifferent thicfrom 52% toblack lines inunsurprising the electricaldifferent.
3.2 Near-UV
Figure 6 presin figure 6(rigold film befgiving a samgiving a sam
d parameters18. ainty in .
ure 6. Scanninttered gold film
ft) presents reflm thickness ofom 20 to 95%onsiders only t
nd begins to bee the conductor
ht) presents recknesses of theo 95% and the n figure 5(righthat their optic
l properties of t
V to near-IR a
sents an SEM ight) represent fore annealing
mple that absorbmple that absorb
The mismatch
ng microscopem. Particle size
lectivity spectrf the gold squ
% and the resothe magnetic eecome comparars should becom
flectance spece gold squares.
resonance wavht) are both thcal response is the circuit mus
absorbers
image of the gthe island sizeto form island
bs in the near Ubers in the near
h of predicted
e images of goe distributions
ra for several faares. As the d
onance waveleenergy in the spable to the thicme more impo
tra for several As the gold svelength red sicker than the the same. Thi
st change, so it
gold nano-islane distribution. Ts. When the thUV. When ther IR.
resonance with
old nano-islandare plotted adj
far-IR samples dielectric thickngth red shiftpace between t
ckness of the coortant, and one
l far-IR samplequares thickenhifts by ~15%skin-depth an
icknesses of 30t is not surprisi
nds formed by The peak of thehickness of Aue film thicknes
h the experime
ds on oxide facent to each i
having differekens from 0.7 ts by ~10%. Cthe conductorsonductors, the would expect
es having the n from 10 to 15
%. The 50 and nd therefore ha0 nm and belowing that the res
annealing optie distribution d
u film is 10 nms was 30 nm, t
ental value may
for two differeimage.
ent dielectric thto 2.2 micron
Calculation of s and not withirelative contrithe resonance
same 2.2 micr50 nm, the pea150 nm thick
ave the same Iw are less thansonance respon
ically thin golddepends on the
m, the average pthe average pa
y be due, all or
ent initial thick
hicknesses but ns, the peak ab
the equivalenin them. As thibution of the mresponse to ch
ron SiO2 thickak absorption ik gold squares IR resistivity20
n the skin-depthnse and depth w
d films. The bae initial thickneparticle size is 7article size is 28
r in part,
kness of
with the bsorption nt circuit his space magnetic
hange.
kness but increases (red and , so it is h, so that would be
ar graphs ess of the 71.5 nm, 82.3 nm,
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Figure 7(leftpeaks at 95%unity for botunderstandabisland size thobserved valu
Reflectivity sreveal the knIR samples fincidence and
We have expwavelength rlayer. The pthickness of incidence upLWIR atmos
Figusamislan
This work wattending thiStudies.
[1] Mauskopwith Si3N4 m[2] Parsons, ATechnol. A 6[3] Liu, X., SUnity Absorb
t) presents refl% for 360 nm wth samples, whble in terms of he resonance ues of 360 nm
spectra of samnown SiO2 absofor different ad the absorptio
perimentally dregions for a spositions of thethe dielectric to 50 degrees
spheric transmi
ure 7. (a) Refmples with gold
nds. (b) Reflec
was supported ins meeting wer
pf, P. D., Bockmicromesh absoA. D. and Pedd
6, 1686–1689 (Starr, T., Starr,bance,” Phys. R
lectivity spectrwavelength. Thhile the relativethe gold-islandwavelengths fand 1.134μm.
mples without gorption band at
angles of incidon blue shifts so
4
emonstrated sturface compose resonances aris required for
s. More than ~8ission window.
flectivity spectd nano-islandsctivity spectra
n part by a grare provided by
k, J. J., Del Caorbers,” Appl. der, D. J., “Thi1988). , A. F. and PadRev. Lett. 104,
ra for the nearhe absorption be widths at LWd size distributfrom equation
gold nano-islant ~296 nm 21. F
dence from 20 omewhat as th
4. SUMMAR
trong design-tused of gold squre predicted wir the perfect ab80% of absorp. This can be u
tra in near-UVs, while thinnewith varying a
ACKNOW
ant from the Flthe UCF Stud
REF
stillo, H., HolzOpt. 36, 765–7in-film infrared
dilla, W. J., “In, 1-4, (2010).
r-UV and nearband width rel
WIR and far-IRions compared2, are =348
nds are represeFigure 7 (rightto 50 degreesis angle is incr
RY AND CO
unable absorptuares or islandith reasonable bsorption to ocption is achieveuseful for therm
V and near-IRer lines represangle of inciden
WLEDGEME
orida High Tecdent Governme
FERENCES
zapfel, W. L. a771 (1997). d absorber stru
nfrared Spatial
r-IR samples. Flative to the reR wavelengthsd with the mon8 nm and 1.24
ented by thinnet) present reflecs. Strong absoreased.
ONCLUSION
tion bands in tds separated froaccuracy using
ccur. This absoed in the range
mal detectors w
R. Thick linessent spectra fronce, as indicate
ENTS
chnology Corrent Association
and Lange, A.
uctures for adva
l and Frequenc
For the near Uesonance centes were about 2no-disperse squ49 μm, in goo
er lines in figurctivity spectra rption is susta
N
the near-UV, nom a gold plang a simple anaorption is sustae of 6-16 micro
working in this
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ridor (I-4) progn and the UCF
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anced thermal
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[4] Diem, M., Koschny, T. and Soukoulis, C., “Wide-angle perfect absorber/thermal emitter in the terahertz regime,” Phys. Rev. B79, 1-4, (2009). [5] Pillai, S., Catchpole, K. R., Trupke, T., and Green, M. A., “Surface plasmon enhanced silicon solar cells,” J. Appl. Phys. 101, 093105 (2007). [6] Rephaeli, E. and Fan, S., “Absorber and emitter for solar thermo-photovoltaic systems to achieve efficiency exceeding the Shockley-Queisser limit,” Optics Express 17, 15145-15159 (2009). [7] Rand, B. P., Peumans, P. and Forrest, S. R., “Long-range absorption enhancement in organic tandem thin-film solar cells containing silver nanoclusters,” J. Appl. Phys. 96, 7519–7526 (2004). [8] Liu, N., Mesch, M., Weiss, T., Hentschel, M. and H. Giessen, “Infrared perfect absorber and its application as plasmonic sensor,” Nano Lett. 10, 2342-23428 (2010). [9] Wang, Xiaonong, Luo, Chunrong, Hong, Gang and Zhao, Xiaopeng, “Metamaterial optical refractive index sensor detected by the naked eye”, Appl. Phys. Lett. 102, 091902 (2013). [10] Hedayati, M. K., Javaherirahim, M., Mozooni, B., Abdelaziz, R., Tavassolizadeh, A., Chakravadhanula, V. S. K., Zaporojtchenko, V., Strunkus, T., Faupe, F. and Elbahri, M., “Design of a perfect black absorber at visible frequencies using plasmonic metamaterials,” Advanced Materials 23, 5410-5414 (2011). [11] Wang, J., Chen, Y., Hao, J., Yan, M. and Qiu, M., “Shape-dependent absorption characteristics of three-layered metamaterial absorbers at near-infrared,” J. Appl. Phys. 109, 074510 (2011). [12] Hendrickson, J., Guo, J., Zhang, B., Buchwald, W. and Soref, R., “Wideband perfect light absorber at midwave infrared using multiplexed metal structures,” Optics Lett. 37, 371-373 (2012). [13] Ye, Y. and Jin, Y., “Omnidirectional, polarization-insensitive and broadband thin absorber in the terahertz regime,” JOSA B 27, 498-504 (2010). [14] Hao, J., Wang, J., Liu, X., Padilla, W. J., Zhou, L., and Qiu, M., “High performance optical absorber based on a plasmonic metamaterial,” Appl. Phys. Lett. 96, 251104 (2010). [15] Alici, K. B., Turhan, A. B., Soukoulis, C. M. and Ozbay, E., “Optically thin composite resonant absorber at the near-infrared band: a polarization independent and spectrally broadband configuration,” Optics Express 19, 14260-7 (2011). [16] Hao, J., Zhou, L. and Qiu, M., “Nearly total absorption of light and heat generation by plasmonic metamaterials”, Physical Review B 83, 1–12 (2011). [17] Palik, E. D., [Handbook of Optical Constants of Solids], Academic Press, 1985. [18] Kitamura, R., Pilon, L. and Jonasz, M., “Optical constants of silica glass from extreme ultraviolet to far infrared at near room temperature,” Appl. Optics 46, 8118-8133 (2007). [19] Collins, T. J., "ImageJ for microscopy," BioTechniques 43 (1 Suppl): 25–30 (July 2007). [20] Bourque-Viens, A., Aimez, V., Taberner, A., Poul, Nielsen, Charette, P. G., “Modelling and experimental validation of thin-film effects in thermopile-based microscale calorimeters”, Sensors and Actuators A: Physical 150, 199–206 (2009). [21] Khashan, M. and Nassif, A., “Dispersion of the optical constants of quartz and polymethyl methacrylate glasses in a wide spectral range: 0.2–3 m,” Opt. Commun. 188, 129–139 (2001).
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