Embed Size (px)
Citation preview
SERC nano Fabrication, Processing and Characterisation (SnFPC)
System Overview
Thermal Field Emission Scanning Electron
Microscope (FEG-SEM) JEOL JSM-7600F
JEOL JSM-7600F FEG-SEM combines an electron
column with semi-in-lens detectors and an in-the-
lens Schottky field emission gun, delivering
ultrahigh resolution combined with a wide range of
probe currents (1 pA to ≥ 200 nA). In addition to a
highly stable probe current, upper and lower
Therm
al F
ield
Em
issio
n S
cannin
g E
lectr
on M
icro
scope (
FE
G-S
EM
) JE
OL J
SM
7600F
•Ultrahigh resolution for fine surface morphology of
nanostructures (secondary electron image resolution
1.0nm at 15kV).
•Built-in r-filter enabling user selectable mixture of
secondary electron (SE) and backscattered electron
(BSE) images.
•Gentle Beam mode (GB) for accelerating voltage (kV)
top-surface imaging, reduced beam damage and
charge suppression allows examination of charging
specimens without additional coating (fig.1)
•New LABe detector allows imaging of specimens at
extremely low accelerating voltage (kV) with high
Typical Applications
Key Features
�Morphology analysis
�Fracture studies
�Thickness of coatings
�Cross sectional analysis
�Defects\Contaminations analysis
�Process characterization (such as
NanoImprint Lithography) and etc.
highly stable probe current, upper and lower
secondary-electron detectors, it is also equipped
with a retractable low-angle backscattered detector
(LABe), a scanning transmission electron detector
(STEM) and Oxford EDS\EBSD system, making it
ideal in materials characterization for compositional
and structural analysis.
FEGFEG--SEM JSM7600FSEM JSM7600F
Fig.1 Fig.2
For enquiries, please contact:
Institute of Materials Research and Engineering (IMRE) 3 Research Link, Singapore 117602 | Tel: (65) 6874 8111 | Fax: (65) 6872 0785
Email: [email protected] | Website: www.imre.a-star.edu.sg/rnd/snfc.asp
Therm
al F
ield
Em
issio
n S
cannin
g E
lectr
on M
icro
scope (
FE
GS
nF
PC
/081/3
00912
extremely low accelerating voltage (kV) with high
spatial resolution (fig.2).
•STEM detector allows both bright-field and dark-field
imaging of thin, electron transparent samples with sub
0.8 nm resolution (fig.3 &4).
•EDS/EBSD capabilities – AZtecSynergy system
(Oxford AZtec energy/AZtec HKL) with X-MAX50
silicon drift detector; high counts rate allows
Nanoanalysis, Mapping, Crystal Orientation (fig 5 to 8).
Fig.4Fig. 3
Fig. 5 Fig. 6
Fig. 8
