Table of Contents

Tuesday, May 14th

SESSION 1: PLENARY I - GaAs INDUSTRY OVERVIEW

Chair: Scott Sheppard, Cree, Inc.

8:30 A M Invited Presentation 1.1 Challenges of Short Lifecycle Commercial Products in Compound Semiconductor Manufacturing 3 Howard S. Witham, TriQuint Semiconductor

8:55 A M Invited Presentation 1.2 GaAs Foundry: Challenges and Future 7 David Danziiio, WIN Semiconductors Corp.

9:20 A M Invited Presentation 1.3 A Co-operative Business Model for Advancing Compound Semiconductor Technology 11 Jerry Curtis, Global Communication Semiconductors

9:45 A M Invited Presentation 1.4 GaAs Industry Overview and Forecast: 2011-2016 Abstract 13 Eric Higham, Strategy Analytics, Inc.

SESSION 2: PLENARY H - PHOTONICS IC V O L U M E MANUFACTURING

Chair: David Wang, Global Communication Semiconductors

10:40 A M Invited Presentation 2.1 Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits 19 J. Pleumeekers, E. Strzelecka, K.-P. Yap, A. James, P. Stvdenkov, P. Debackere, T. Nguyen, S. Agashe, N. Kim, V. Lai, J Won, C. Hill, Z. Wang, I Dudley, A. Dental, Q. Chen, D. Christini, R. Salvatore, D. Lambert, M. Lai, M. Missey, R. Muthiah, J. Rossi, P. Liu, S. Craig, R Schneider, M. Reffle. F. Kish, Infinera Corporation

11:05 A M Invited Presentation 2.2 Multi-Guide Vertical Integration in InP - A Regrowth-Free PIC Technology for Optical Communications 23 Valery Tolstikhin, OneChip Photonics, Inc.

11:30 A M Invited Presentation 23 Heterogeneous Integration as a Manufacturing Platform for Photonic Integrated Circuits 27 Eric Hall, Jae Shin, Gregory Fish, Aurrion, Inc.

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SESSIONS: OPTOELECTRONICS TECHNOLOGIES

Chair: Yohei Otoki, Hitachi Cable, Ltd

1:20 P M Invited Presentation 3.1 The Latest Progress of Nitride-based Visible LEDs and Laser diodes: Nonpolar and Semipolar Devices vs. Polar (C-pIane) Devices 31 Shuji Nakamura, University of California, Santa Barbara

1:45 P M Invited Presentation 3.2 The Discovery of ITT-V Oxidation, Device Progress, and Application to Vertical-Cavity Surface-Emitting Lasers 33 J. M. Dallesasse, University of Illinois at Urbana-Champaign

2:10 P M Invited Presentation ^ 3.3 Non-850nm Vertical Cavity Laser Applications and Manufacturing Technology................. 37 Klein Johnson, Vixar, Inc.

2:35 P M Invited Presentation 3.4 AUnGaN Based Deep Ultraviolet Light Emitting Diodes and Their Applications Technology 41 AsifKhan, University of South Carolina

SESSION 4a: PROCESS - BACKSIDE

Chair: Michelle Bourke, Oxford Instruments Plasma Technology

3:30 P M 4a.l Advances in Back-side Via Etching of SiC for GaN Device Applications 47 Anthony Barker^, Kevin Riddell', HumaAshraf & Dave Thomas', Chia-Hao Chen^. Yi-Feng Wef, I-Te Cho^ & Walter Wohlmuth^ 'SPTS Technologies, ^ WIN Semiconductors Corp.

3:50 P M 4a.2 Meeting the Fabrication Challenges For Backside Processing on Thin Substrates with Ultrahigh Device Topography 51 Pavan Bhatia', Roberta Hawkins', Jan Campbell', Martin Me', Alex Smitff, Mark Privet^, Gary Bramf, 'TriQuint Semiconductor,^Brewer Science, Inc.

4:10 P M 4a.3 Wafer-level Backside Process Technology for Forming High-density Vias and Backside Metal Patterning for 50-M.m-thick InP Substrate 55 Takttya Tsutsumi, Toshihiko Kosugi, and Hideaki Matsuzaki, NTT Photonics Laboratories, NTT Corporation

4:30 P M Student Presentation 4a.4 Full-Wafer, Small-Area Via-Hole Fabrication Process Development for Indium-Bearing HI-V Heterostructure Devices 59 Yuning Zhao, Patrick Fay, University of Notre Dame

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SESSION 4b: PROCESS - LITHOGRAPHY

Chairs: Robert Mohondro, Plasma-Therm, LLC, Kamal Alavi , Rc^theon

3:30 P M 4b.l Thick Fibn Photo Resist Application Spnn on Application v. Dry Film Lamination 65 Suzanne Combe, TriQuint Semiconductor

3:50 P M 4b.2 The Effect of Exposure Mode on Feature Resolution and Film Thickness for Thick (>10 ^m) BCB 69 J. Parke, A. Gupta, J. Mason, K. RenaJdo, Northrop Grumman Electronic Systems

4:10 P M 4b.3 Final Module Yield Improvement by Increasing the Adhesion of SU8 to Microelectronic Devices using a DMAIC Approach 73 Jan Campbell, Martin Ivie, Qizhi He, TriQuint Semiconductor

4:30 P M 4b.4 Automated Skiplot Sampling for Photoresist Thickness Measurement 77 Dav0 Punsalan, Donald Pursley, Christopher Roper, TriQuint Semiconductor

Wednesday, May 15th

SESSION 5a: RF GaN PRODUCIBILTrY

Chairs: David Meyer, US Naval Research Laboratory, Glen "David" Via , Air Force Research Laboratory

8:00 A M Invited Presentation 5a.l Recent Defense Production Act Title III Investments In Compound Semiconductor Manufacturing Readiness 83 Gene Himes', David Maunder^, Bruce Kopp^, 'Air Force Research Laboratory, ^David P. Maunder Consulting

8:30 AM 5a.2 Raytheon Title HI Gallium Nitride (GaN) Production Program 87 Joseph Smolko, Colin Whelan, Christopher Macdonald, Joshua Krause, Bradley Mikesell, Michael Benedek, Raytheon Corp.

8:50 AM 5a.3 Achieve Manufacturing Readiness Level 8 of high-power, high efficiency 0 J5-^m GaN on SiC HEMT Process 91 C. Delia-Morrow, C. Lee, K Salzman, TriQuint Semiconductor

9:10 AM 5a.4 GaN-on-SiC MMIC Production for S-Band and EW-Band Applications 95 Ryan Fury, Scott Sheppard, Jeffrey B. Barner, Bill Pribble, Jeremy Fisher, Donald A. Gajewski, Fabian Radulescu, Helmut Hagleitner, Dan Namishia, Zoltan Ring, Jennifer Gao, Sangmin Lee, Jim Milligan and John Palmour, Cree, Inc.

9:30 AM 5a.5 GaN-based Components for Transmit/Receive Modules in Active Electronically Scanned Arrays 99 Mike Harris, Robert Howard and Tracy Wallace, Georgia Tech Research Institute

CS MANTECH Conference, M a y 13tl i - 16th, 2013 . N e w Or leans, Lou is iana, U S A

SESSION 5b: EPITAXY & MATERIALS

Chairs: Guoliang Zhou, Skyworks Solutions, Inc., Paul Pinsukanjana, IntelHEPI

8:00 A M Invited Presentation 5b.l A Comparison of MOVPE and M B E Growth Technologies for m-V Epitaxial Structures 105 Rodney Pelzel, IQE Wireless

8:30 A M 5b.2 Impact of crystal-quality improvement of epitaxial wafers on RF and power switching devices by utilizing VAS-method grown GaN substrates with low-density and uniformly distributed dislocations 109 Yohei Otoki', Takeshi Tanaka", Hiroyuki Kamogawa', Naoki Kaneda', Tomoyoshi Mishima', Unhi Hondc^,and Yutaka Tokudcf'Hitachi Cable, Ltd, 'Aichi Institute of Technology

8:50 A M Student Presentation 5b.3 Fe-doped AlGaN/GaN HEMTs: Kink-Effect Screening using Yellow Luminescence? 113 Nicole Killat', MichaelJ. Uren', David J. Wallis', Trevor Martin^, and Martin Kuball', ' University of Bristol, ^University of Cambridge, ^IQE PLC

9:10 A M 5b.4 Performance and Reliability of AlGaN/GaN HEMT on 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity 117 Sangmin Lee, Tim Kennedy, Christer Hallin, Helder Antunes, Brian Fetzer, Scott T. Sheppard, Al Burk, Don A. Gajewski, Rick McFarland, Jim Milligan and John Palmour, Cree, Inc.

9:30 A M 5b.5 Development of an Epitaxial Growth Process on European SiC Substrates for a Low Leakage GaN HEMT Technolo^ with Power Added Efficiencies Around 65% 121 P. Waltereit', S. MiUler', L. Kirst?, S. Storm^, A. Weber^, J. Splettstofiei^, B. Schaimecker^, 'Fraunhofer Institute for Applied Solid State Physics, ^SiCrystal AG, ^United Monolithic Semicotjductors GmbH

SESSION 6a: GaN PROCESS, DEVICE, & CIRCUITS

Chairs: Karen Moore, Freescale Semiconductor, Inc., Ming-yiKao, TriQuint Semiconductor

10:20 A M 6a.l An Optical 0.25-̂ m GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products 127 Simon M. Wood, Scott T. Sheppard, Fabian Radulescu, Don A. Gajewski, Bill Pribble, Donald Farrell, Ulf Andre Jeffrey B. Bamer, Jim Milligan and John Palmour, Cree, Inc.

10:40 A M Student Presentation . 6a.2 Effect of sputtered SiN passivation on current collapse of AlGaN/GaN HEMTs 131

Md. Tanvir Hasan, Toshikazu Kojima, Hirokuni Tokuda, and Masaaki Kuzuhara, University of Fukui

11:00 A M 6a.3 Investigation of AlGaN/GaN HEMTs Passivated by AIN Films Grown by Atomic Layer Epitaxy 135 A.D. Koehler', N. Nepal', T.J Anderson', M.J Tadjer^, KD. Hobart', C.R. Eddy, Jr.', F.J Kub', 'Naval Research Laboratory, ^ Universidad Politecnica de Madrid

11:20 A M Student Presentation 6a.4 Fabrication Technology of GaN/AlGaN H E M T Slanted Sidewall Gates Using Thermally Reflowed ZEP Resist and CHFa/SF^ Plasma Etching 139 K Y. Osipov, W. John, N. Kemf S. A. Chevtchenko, P. Kurpas, M. Matalla, O. Kriiger, and J. Wilrfl, Ferdinand-Braun-Institut

C S M A N T E C H Con fe rence , M a y 13th - 16th, 2013 , N e w Or leans, Louis iana, USA

11:40 A M 6a.5 Development and Control of a CZSjim Gate Process Module for AIGaN/GaN HEMT Production 143 Wei-Chou Wang, Chia-Hao Chen, Jhih-Han Du, Ming Hung Weng, Che-Kai Lin, Willie Huang, Ricky Chang, Shih-Hui Huang, Yi-Feng Wei, Stanley Hsieh, Michael Casbon, Paul J. Tasker, Wen-Kai Wang, I-TeCho, Walter Wohlmuth, WIN Semiconductor Corp.

SESSION 6b: MANUFACTURING: TEST & CHARACTERIZATION

Chairs: Peter Ersland, M/A-COM Technology Solutions, Hidetoshi Kawasaki, Sony

10:20 A M 6b.l Low Turn-On Voltage Schottky Diode in InGaP/GaAs HBT/BiFET Processes 149 Cristian Cismaru and Peter J. Zampardi, Skyworks Solutions, Inc.

10:40 A M 6b.2 Device Characteristics Analysis of GaAs/InGaP HBT Power CeUs Using Conventional Through Wafer Via Process and Copper Pillar Bump Process 153 Hsiu-Chen Chang, Shu-Hsiao Tsai, Cheng-Kuo Lin, Tim Hsiao, Steven Chou, Chen, Pi-Hsia Wcmg, and Dennis WilliamsJu-Yung, WIN Semiconductors Corp.

11:00 A M 6b.3 Improved Vertical Probe Technology for Production Probing on Cu Pillar Bumps 157 Martin J. Brophy, Chin-Shun Chen, Keith Quick, Avago Technologies

11:20 A M 6b.4 Real-time Validation of Probe Contact QuaUty in GaAs P C M Testing 161 Martin J. Brophy, Phil Marsh, Anthony Martinkus, and Judy Huggenberger, Avago Technologies

11:40 A M 6b.5 Real Time Dynamic Application of Part Average Testing (PAT) at Final Test 165 Douglas Pihlaja, TriQuint Semiconductor

SESSION 7a: T H E R M A L DESIGN I

Chair: John Blevins, Air Force Research Laboratory

1:30 PM Invited Presentation 7a.l DARPA's Intra/Interchip Embedded Cooling (ICECool) Program 171 Avram Bar-Cohen', Joseph J. Maurer^, Jonathan G. Felbinger^, 'Defense Advance Research Projects Agency, ^Booz Allen Hamilton

2:00 PM 7a.2 GaN HEMT Near Junction Heat Removal 175 Rajinder Sandhu', Vincent Gambin', Benjamin Poust', loulia Smorchkova', Gregg Lewis', Raffi Elmadjian', Danr^ Li', Craig Geiger', Ben Heyin^, Mike Wojtowicz', Aaron Old', Tatyana Feygelson-, Karl Hobart, Bradford Pate^, Joe Tabeling", Elah Bozorg-Grayeli\ Goodson^ 'Northrop Grumman Aerospace Systems, ^SAIC, ^Naval Research Laboratory, ''Applied Diamond, Inc., ^Stanford University

2:20 PM 7a.3 A New High Power GaN-on-Diamond H E M T with Low-Temperature Bonded Diamond Substrate Technology 179 P.C. Chao, K Chu and C. Creamer, BAE Systems

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SESSION 7b: TRAPS & TRANSIENTS

Chairs: Tom Low, Agilent Technologies, Chang-Hwang Hua, WIN Semiconductors Corp,

1:30 P M Invited Presentation Tb.i Correct Determination of Trap Densities at High-k/IH-V Interfaces 185 R. Engel-Herbert, Pennsylvania State University

2:00 P M 7b.2 Temporal Characterization of Defects and Evolution of Strain in AlGaN/GaN HEMTs Under Bias 189 H. Ghassemi', A. Lang', C. Johnson-. R Wan^. B. Son^, H. Xin^, andM. L. Taheri', 'Dept. of Materials Science and Engineering, Drexel University, ^Centralized Research Facilities, Drexel University, ^University of Notre Dame

2:20 P M Student Presentation 7b.3 Study of Interfacial Charge Properties and Engineering of ALD dielectric/IH-Nitride Interfaces 191 Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park and Siddharth Rajan, Dept. of Electrical and Computer Engineering, The Ohio State University

2:40 P M 7b.4 GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs 195 M. Silvestri', M. J. Uren', D. Marcon\ Kuball', ' University of Bristol, ^IMEC

3:00 P M 7b.5 Ultra Fast Switching Speed FET Technology Development 199 Jerod Mason, Gmliang Zhou, Joe Bulger, Jay Yang, David Petzold, Dylan Bartle, Skyworks Solutions, Inc.

SESSION 8a: T H E R M A L DESIGN H \^—

Chairs: Andv Souzis. II-VL Mar tmK^alL,U«iw?. i t>; ^s^^ei.

.̂'40 PM 5a.l Process Fmprovements for an Improved Diamond-capped GaN H E M T Device. ..2fl5 ATcHfA/e^', Af../. ladjer-, K.D. Hobari', T.I. Feygelson^, B.B. Pate\ Kub',

INaval Research Laboratory, 2Universidad Politecnica de Madrid, Spain, 3SAIC, Inc.

4:00 PM 8a J Ag/Diamond Composite Shims for HPA Thermal Management 209 Jason H. Nadler, Keri A. Ledford, H. Michael Harris and Brent K Wagner, Georgia Tech Research Institute

4:20 P M 8a3 Thermal and Mechanical Sensors for Advancement of GaN RF M M I C Techno\o^es 211 B. Wagne^, H.M. Harris', M. King', H. Chan'. N. Minor and L. B. Burns^, 'Georgia Tech Research Institute. ^PEO Integrated Warfare Systems, Naval Sea Systems Command

4:40 P M 8a.4 GaN HEMTs for Power Switching Applications: from Device to System-Level Electro-Thermal Modeling 215 Nicola Delmonte, Paolo Cova, and Roberto Menozzi, University of Parma

5:00 P M 8a.5 InGaP/GaAs HBT Safe Operating Area and Thermal Size Effect 219 Nick GM Tao, Chien-Ping Lee, Tony St. Denis and Tim Henderson, TriQuint Semiconductor, Inc.

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SESSION 8b: PROCESS - M E T A L

Chairs: Suzanne Combe, TriQuint Semiconductor, Jansen Uyeda, Northrop Grumman AS

3:40 P M 8b.l High Precision Thin Metal Film Measurement by Optical Transmission 225 Kezia Cheng, and Bing Hui Li, Skyworks Solutions, Inc.

4:00 P M 8b.2 SiN/Ge Lift-off: A Method for Patterning Films Deposited at High Temperature 229 D. J. Meyer', D. A. Deen\ P. Downey', D. S. Katzer', D. F. Storm', andS. C. Binari', 'Naval Research Laboratory, 'University of Minnesota

4:20 P M 8b.3 Palladium Diffusion Barrier Grown by Electoplating for Backside Cu Metallization of GaAs Devices 233 Daisuke Tsunami, Koichiro Nishizawa, Toshihiko Shiga, Tomoki Oku and Masayoshi Takemi, Mitsubishi Electric Corporation

4:40 P M 8b.4 Optimization of Electroplating Processes for Copper Bumps....— 237 Elizabeth Tan Calora and Travis Abshere, TriQuint Semiconductor

5:00 P M 8b.5 Back Metal Optimization for PbSn Die Attach Assembly 241 Jose Suarez, Jason Fender, and Jenn-Hwa Huang, Freescale Semiconductor

Thursday, May 16th

SESSION 9a: WIDE BANDGAP POWER DEVICES

Chairs: Toshihide Kikkawa, Fujitsu Laboratories. Shyh-Chiang Shen, Georgia Tech

8:00 A M Invited Presentation 9a.l High Temperature (> 200 °C), High Frequency Multi-Chip Power Modules. 247 Ty McNutt, Brandon Passmore, Zach Cole, Bret Whitaker, Adam Barkley, Alex Lostetter, Arkansas Power Electronics International, Inc.

8:30 A M 9a.2 Emerging Applications for GaN Transistors 251 David Reusch, Alex Lidow, Johan Strydom, Michael de Rooij. Efficient Power Conversion Corporation

8:50 A M Student Presentation 9a.3 600 V High-Performance AIGaN/GaN HEMTs with AlN/SiNx Passivation 255 Zhikai Tang, Sen Huang, Qimeng Jiang, Shenghou Liu, Cheng Liu and Kevin J. Chen, The Hong Kong University of Science and Technology

9:10 AM 9a.4 600V-900V GaN-on-Si Process Technology for Schottky Barrier Diodes and Power Switches Fabricated in a Standard Si-Production Fab 259 J.J.T.M. Donkers'. S.B.S. Heif, G.A.M. Hurkx', H. Broekman^, R. Delhougne', J.A. CroorP, D. Gravesteijn', J Sonsky', 'NXP Semiconductors Research, Belgium, ^NXP Semiconductors Research, High Tech Campus, The Netherlands, ^NXP Semiconductors Nijmegen, The Netherlands

9:30 A M 9a.5182W L-band GaN High Power Module with 66% Power Added Efficiency Based on European Technologies 263 Stephane Pochette', Olivier Vendier', Dominique Langrez', Jean-Louis Cazaux', Michael Buchtcf, Martin Kuball^. Alain Xiong4, ' Thales Alenia Space, ^UMSGmbH, ^University of Bristol, ^AMCAD Engineering

CS MANTECH Conference, M a y 13th - 16th, 2013 , N e w Or leans, Lou is iana, U S A

SESSION 9b: L E D O U T L O O K & TECHNOLOGY

Chairs: Ruediger Schreiner, Aixtron SE, Gene Kohara

8:10 A M Invited Presentation 9b.l Low-Cost High-Efficiency GaN LEDs on Large-Area Silicon Substrates 269 Sir Colin J. Humphreys, University of Cambridge

8:40 A M Invited Presentation 9b.2 How GaN-on-Si Could Disrupt the Current Equilibrium of the Booming L E D Industry 273 Philippe Roussel, Vole Developpement

9:10 A M 9b.3 Improvement of L E D Luminance Efficiency by Sapphire Nano PSS Etching 275 H. Ogiya, T. Nishimiya, M. Hiramoto, S. Motoyama, O. Tsuji, and P. Wood, Samco, Inc.

9:30 A M Student Presentation 9b.4 Improvement in enhanced spontaneous emission of Resonance Cavity Light Emitting Transistors via Inductively Coupled Plasma Etching Top Distributed Bragg Reflector 279 Mong-Kai Wu, Michael Liu, and Milton Feng, University of Illinois at Urbana-Champaign

SESSION 10a: MATERIALS: GaN EPI

Chairs: Judy Kronwasser, NOVASiC, Robert Sadler, Global Communications Semiconductors, LLC

10:10 A M lOa.l MOCVD Growth of AIGaN/GaN Heterostructures on 150 mm Silicon 285 Jie Su, Hongwei Li, Seungjae Lee, Balakrishnan Krishnan, Dong Lee, George Papasouliotis, andAjit Paranjpe, Veeco MOCVD Operations ^

10:30 A M lOa.2 Uniformity Studies of AIGaN/GaN HEMTs on 200-mm Diameter Si(lll) Substrate 289 S. Arulkumaran', G. L Ng^, S. Vicknesh'. CM. Manojkumar\ An^, H. Wang^, M.J. Anancf, K. Ranjan', S. L. Selvaraf, W. Z. Wan^, G.-Q. Lo^, S. Tripathy'', 'Temasek Laboratories, Nanyang Technological University, ^Novitas, Nanoelectronics Centre of Excellence, School of EEE, Nanyang Technological University, ^A *star Institute of Microelectronics, ^A *star Institute ofMaterials Research and Engineering,

10:50 A M lOa.3 High Voltage GaN-on-Silicon HEMTs 293 T. Boles', C. Varmazis', D. Carlson', L. Xia', D. Jin', T. Palacios\ W. Turner^, R. J Molnar^, 'M/A COM Technology Solutions, ^Massachusetts Institute of Technology, ^Massachusetts Institute of Technology, Lincoln Laboratory

11:10 A M lOa.4 High Voltage GaN-on-Silicon Schottky Diodes 297 T. Boles', C. Varmazis', D. Carlson', L. Xia', D. Jin', T. Palacios', G. W. Turner^, R J Molnat^, 'M/A COM Technology Solutions, ^Massachusetts Institute of Technology, ^Massachusetts Institute of Technology, Lincoln Laboratory

11:30 A M Student Presentation lOa.5 Comparison of Schottlg^ Diodes on Bulk GaN substrates & GaN-on-Sapphire 301 Pei Zhao, Amit Verma, Jai Verma, HuiliXing and Debdeep Jena, University of Notre Dame

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SESSION 10b: PROCESS - INTEGRATION

Chair: Steve Mahon, Cascade Microtech, Inc.

10:10 A M lOb.l Layout Practices for Die Size Reduction on InGaP/GaAs HBT MMICs for Handset Power Amplifier Applications 307 Shu-Hsiao Tsai, Rong-Hao Syu, Yu-Ling Chen, Wen-Fu Yu, Cheng-Kuo Lin, and Dennis Williams, WIN Semiconductors Corp.

10:30 A M lOb.2 Evaluation of Material and Process Contributions to BiFET Variation Using Design of Experiments 311 Peter J. Zampardi, Bin Li, Cristian Cismaru, Hal Banbrook, and Andre Metzger, Skyworks Solutions, Inc.

10:50 A M lOb.3 Bulk Acoustic Wave Technology Advances 315 G. Fattinger, R. Aigner, P. Stokes, A. Volatier, F. Dumont, TriQuint Semiconductor

11:10 A M lOb.4 Heterointegration Technologies for High Frequency Module Based on Film Substrates319 Karlheinz Bock, Erwin Yacoub-George, Henry Wolf, Christof Landesberger, Gerhard Klink, and Horst Gieser, University of Berlin

11:30 A M lOb.5 Passivation Stress versus Top Metal Profiles by 3D Finite Element Modeling 323 Xiaokang Huang, Liping Zhu, Bang Nguyen, Van Tran, Harold Isom, TriQuint Semiconductor

SESSION 11a: GaN G A T E DIELECTRICS

Chair: ^dinc^^siy. University of Notre Dame

1:10 P M Invited Presentation l l a . l Characterization and Control of Insulated Gate Interfaces on GaN-Based Heterostructures 329 Tamotsu Hashizume''^ cmd Masamichi Akazaw(^, 'Hokkaido University, ^JST-CREST

1:40 P M Student Presentation lla.2 A Study on AI2O3 Deposition by Atomic Layer Deposition for IH-Nitride Metal-Insulator-Semiconductor Field Effect Transistors 333 Yi-CheLee, Tsung-Ting Kao, and Shyh-Chiang Shen, Georgia Tech University

2:00 P M 1 la,3 Thermal Oxidization of MIS Interface between Etched GaN and ALD-AI203 337 Tetsuya Fujiwarc^, Minoru Akutsu', Norikazu Ito', Junichi Kashiwagi', Kentaro Chikamatsu', Ken Nakaharc^, and Masaaki Kuzuharcf, 'ROHM Co., Ltd., ^University of Fukui

2:20 P M Student Presentation lla.4 High Performance Enhancement-Mode AIGaN/GaN MOSHEMT using Bimodal-Gate-Oxide and Fluoride-Based Plasma Treatment 341 Liang Pang and Kyekyoon Kim, University of Illinois at Urbana-Champaign

2:40 P M lla.5 Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance <111> Si Substrates by Molecular Beam Epitaxy 345 Jeffrey LaRoche, William Hoke, David Altman, James McClymonds, Paul Alcorn, Kurt Smith, Eduardo Chumbes, Jeff Letaw, and Thomas Kazior, Raytheon IDS Microelectronics

CS MANTECH Conference, M a y 13th - 16th, 2013 , N e w Or leans, Lou is iana, U S A

SESSION l ib: YIELD ENHANCEMENT AND MANUFACTURING

Chair: Marty Brophy, Avago Technolgies

1:10 P M Invited Presentation l l b . l Challenges of Equipment Support in a Factory with a Diverse Multigenerational Toolset. 351 David W. Brindza, Travis A. Abshere, TriQuint Semiconductor

1:40 P M llb.2 Factory Automation for Overall Fab Efficiency 355 Nirav Thakkar, Skyworks Solutions

2:00 P M llb.3 Optimizing Staff Levels Using Linear Programming 359 Marino Arturo and Ariel Meyuhas, MAX I.E.G.

2:20 P M l lb .4 Yield Learning of a GaAs-Based High-Throw-Count Switch for Handset Applications ..363 Tertius Rivers, Corey Nevers, Chi-hing Choi, Hid Liu, TriQuint Semiconductor

2:40 P M llb.5 Combining Visual Inspection and Bare Die Packaging for High Volume Manufacturing369 Chang 'e Weng and Thorsten Saeger, TriQuint Semiconductor

SESSION 12: POSTER SESSION

Chairs: Kell i Rivers, Materion, Corey Nevers, TriQuint Semiconductor, Jansen Uyeda, Northrop Grumman AS

3:00 P M 12.1 How Mask Data Error Rate Maintained at below 0.1% While Volume Increased 2+ Folds -- 4:00 PM Through Automation 375

Susie Ross, Tin Ko, Jianli Fu, Hongxiao Shoo, Skyworks Solutions, Inc.

Student Presentation 12.2 Yield Improvement in Fabrication of Edge Emitting Transistor Lasers by Optimized BCB Planarization 379 Rohan Bambery and Milton Feng, University of Illinois at Urbana-Champaign

123 Development of PVD-AIN Buffer Process for GaN-on-Si 383 Frank Cerio, Arindom Datta, Adrian Devasdhayam, Boris Druz, Veeco Instruments

Student Presentation 12.4 GaN MOSHEMT Using Sputtered-Gate-SiO. and Post-Annealing Treatment 387 Liang Pang', Yaguang Lian', Dong-Seok Kim^, Jimg-Hee Lee^, and Kyekyoon Kim', 'University of Illinois at Urbana-Champaign, ^Kyungpook National University, Korea

12.5 Process-Reliability Relationships in GaN and GaAs Field Effect Transistors and HFETs391 A. Christou, University of Maryland

12.6 Formation of slanted Gates for GaN-based HEMTs by Combined Plasma and Wet Chemical Etching of Silicon Nitride 395 A. Thies, N. Kemf, S.A. Chevtchenko, and O. Kriiger, Ferdinand-Braun-Institut-Berlin

12.7 Deposition Control During GaN MOVPE 399 D. Fahle', T. KrUcken^, M. Dauelsber^, R. Schreiner^, H. Kalisch', M. Heuken''^ and A. Vescan', 'RWTHAachen University, ^AIXTRON SE

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12.8 Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications 403 T. Uhrmann, T. Matthias, T. Glinsner, V. Dragoi, T. Plach, E. Pabo, M. Wimplinger and P. Lindner, EV Group

Student Presentation 12.9 Methods of Improving GaN-Based L E D Luminous Efficiency 407 Liang-Yu Su and JianJang Huang, National Tarwan University

Student Presentation 12.10 Current Gain Enhancement of Light-Emitting Transistors Under Different Ambient Temperatures 411 Wen-Chung Tu and Chao-Hsin Wu, National Taiwan University

12.11 BCB Encapsulation for High Power AlGaN/GaN-HFET Technology 415 P. Kurpas, O. Bengtsson, S. A. Chevtchenko, L Ostermay, R. Zhytnytska, W. Heinrich, J. Wiirfl, Ferdinand-Braun-Institut-Berlin

12.12 Recent Developments in Real-Time Thickness Control of Plasma Deposited Thin Film Dielectrics Using Optical Emission Interferometry 419 Kenneth D. Mackenzie, David J. Johnson, Christopher W. Johnson, and Linnell Martinez, Plasma-Therm, LLC

12.13 Reducing Defects Using a 5x Stepper in Pattering 80 nm SU8 on MEMS Devices 423 Jean-Frangois Bedard, Jan Campbell, Martin Ivie, Elda Clarke and Gary Head, TriQuint Semiconductor

12.14 Back to the Future: How Implementing Retro-Style Processing Can be an Improvement 427 Martin Ivie, Jan Campbell, Qizhi He, TriQuint Semiconductor

Student Presentation 12.15 Growth and Characterization of Band Gap Engineered InGaAs/InAIAs/ GaAs High Electron-Mobility Quantum Well Structure Towards Low Leakage VLSI Applications 431 U. P. Gomes', Y. Cher^, Y.K Yadav', S. Ghosh', S. Chowdhury', P. Mukhopadhyay', P. Chow^ and D. Biswas', 'Indian Institute of Technology Kharagpttr, ^SVT Associates

12.16 Developing a Fundamental Understanding of Gold Spitting During Evaporation 435 Alan Duckham', Lawrence Luk^, Robert Spragu^, 'Materion Microelectronics & Services, ^Materion Barr Precision Optics & Thin Film Coatings

12.17 Power Output of Multijunction Solar Cell Wafers 439 Onur Fidaner and Michael W. Wiemer, Solar Junction Corporation

12.18 Integrating a Control Plan Methodology into an MES System to Enhance Ease of Process Control 443 Lesley Cheema, Jason Welter, Nicolas Awad, TriQuint Semiconductor

kathor Index 447 cronyms, Abbreviations, and Chemical Names 453

CS MANTECH Conference, May 13th - 16th, 2013 , N e w Or leans, Lou is iana, U S A xxvii