Study of physical properties of zinc holmium oxide / zinc oxide
bilayer structures
I





PL
III
Abstract
Pulsed-laser deposition (PLD) was applied to grow holmium-doped ZnO(Ho:ZnO) thin films on
c-sapphire substrate with different holmium(Ho) concentrations and with ZnO buffer layer. The
nominal doping density of Ho ranges from 315. The physical properties of Ho:ZnO thin films
were investigated by x-ray diffraction (XRD), photoluminescence(PL), and superconducting
quantum interference device (SQUID). The XRD patterns show that there is no secondary phase.
Photoluminesence spectroscopy showed the major defects are zinc vacancy and interstitial zinc. The
m-H curves show paramagnetism of the thin films.
Keywords : pulsed-laser depositiondiluted magnetic semiconductorHoparamagnetism
IV

X ................................................................................................................................ 6
................................................................................................................................ 8
................................................................................................................ 9
Chapter 3 ........................................................................................................ 14
PLD ......................................................................................................................... 14
PLD ......................................................................................................................... 15
PLD ......................................................................................................................... 15
40
1988 Albert Fert Peter Grünberg (giant magnetoresistance, GMR)[1]
(spintronics)
GaMnAs (diluted mafnetic semiconductor,DMS)
(1.1)[2][3]( MnFeCoNiCu )(
SmErGdHo )( SiGeGaNGaAsZnO )

Rai(Thermal evaporation technique)
5%(1.4)[6]
p
300K
exiton binding energy 60meV
[7]
light emitting diodesLEDs[8](GaN)

2.1.1
(zinc-blende) 2.1.1

(Al2O3)
c-planea-planer-plane( 2.1.2) a=3.25 Å c=5.21 Å
a=4.76 Åc= 12.93Å 2.1.2 c-sapphire
31.7%[13] sub-lattice c
30 sub-lattice 31.7%
18%( 2.1.3)[14]

2.1.2 a
mismatch 18[14]
2.1.2
[Xe]4f 11
10 5d
1 6s
176.6pmHo 3+ 89.4pm 10.61μB 10.5μB
2.1.32.1.4[15]
X 100~0.01 Å 1~10 Å
X X X

X


KLM n=123 K
L K X Kα M K Kβ
Al Kα(8.34Å )Cu Kα(1.54Å )Cr Kα(2.29Å )Fe
Kα(1.94Å )
2.2.2
Mα[16]

2-42dsinθ



K 0.9λ X B θ
( 2.2.3)
2.2.3 λ
(luminescence) 2.3.1
(nonradiative re)
A B
(Vo)(VZn)(Oi)(Zni)
(OZn)(ZnO)[18] 2.3.1 2.3.3

11
(1)(paramagnetism)
~10 -2
( 2.4.1)
( 2.4.2)

(1)(Curie law)[21]
χ =
………………(1)

5

1O O1
2,3 MS(saturated
magnetization) 21O
Mr(remanence)



S-I-S
Ic
Ic
Ic
(Pulsed Laser Deposition, PLD)
3.2 (Pulsed Laser Deposition, PLD)
(Pulsed Laser Deposition, PLD)


plume
4
16
Nd:YAGe LOTIS TII Nd :YAG ( 3.3.1)
Nd :YAG Nd 3+(Y3Al5O12,Yttrium Aluminum
Garnet, YAG Nd:YAG 1064nm
266nm 3.3.1PLD
3.3.2
( 3.3.3)
3.3.1
3.3.2

3.3.3
30cm
2.9J/cm 2

attenuator
18
15
6. ( 3.3.7)
3.
3.3.5

mbar
6.
(b)
2.70
3.08
3.23
(a) 3.23
3 ( 4.1.2) 2.7eV3.08eV3.23eV
2.7eV 3.08eV 3.23eV [24]
( 4.1)3 × 10−2mbar
4.2.2 X 3 × 10−2mbar
( 4.2) 4.2.14.2.2 3 × 10−2mbar

4.1.1 PL(a) 6503 × 10−13 × 10−23 × 10−3mbar
(b) PO2=3 × 10−2mbar 3 2.703.083.23eV
21
3 × 10−13 × 10−23 × 10−3mbar
4.2 ZnO(002)
ZnO(002) Al 2 O
4.3 B 750
ZnO(002) 0.319 0.253 0.06

ZnO(002)( 4.4)[Ho]=15%
1.39 0.40
4.2.3 F (2θ=28°~80°) X ZnO(002)
ZnO(004)sapphire(006)
ZnO(002) Al 2 O
in te
n si
Peak1
Peak2
PeakSum
24
(b)[Ho]=15% X
32 34 36 38 40 42 44
(a)
D : with buffer
(b)
ZnO(002)
ZnO(002)2θ
(deg)
FWHM(deg) 0.31 0.20 0.25 1.39 0.40 0.15
30 40 50 60 70 80
(b)
ZnO(004)
4.4 ZnO(002)
2.9J/cm 2 PL X
:
( 4.5)C
4.3.3 PL 650 650
( 4.2.4) 650 ZnO Ho
4.3.1
ZnO : Ho = 97:3
Sapphire()
750
ZnO(004)
ZnO(002)2θ
(deg)
2.83
3.19
3.06
3
4.4.1atomic force microscopeAFM
5 10 30 50nm120nm200nm
4.4.2 X ZnO(002)( 4.6)
200nm
4.4.3 PL 50nm 120nm
200nm X ZnO(002)

Sapphire()

(nm)
ZnO(002)2θ
(deg)

FWMH(deg)
30
:51030
ZnO(002) Al 2 O
Pure ZnO
with buffer
P L
i n
te n
si ty
( a .u
4.5 Zn1-xHoxO/ZnO/c-Sapphire(x=0,0.03,0.05,0.10,0.15)
4.1 4.3 4.4 3 × 10−2mbar
650 50nm
ZnO 50nm 650 Zn1-xHoxO 150nm
750 3 × 10−2mbar
PL
300K 20K
PL x=0.03 0.05T=20K
4.5.6 3

32
Ho=3%
with buffer
2.0 2.5 3.0 3.5
33
2.1 2.4 2.7 3.0 3.3 3.6 3.9
[Ho]=15%
with buffer
in te
n si
34
(b)
sum
(b) x=0.05T=20K
35
(b) x=0.05T=300K
36

30kOe (
4.5.9) 0%3%5% 20kOe 10% 15%
30kOe Ho
4.5.10 4.5.11
m-H m-H

4.5.8 T=5KH≤ ±40kOe Ho 0%3%5%
10%15% m-H
-1.0
-0.5
0.0
0.5
1.0
1.5
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
0
1
2
3
4
5
6
7
Ho density(%)
T=5K
m S
4.5.9 T=5KH≤ ±40kOe Ho 0%3%5%10%15%
m-H
-0.04
-0.02
0.00
0.02
0.04
(b)
-0.04
-0.02
0.00
0.02
0.04
(a)
-0.04
-0.02
0.00
0.02
0.04
(c)
-0.04
-0.02
0.00
0.02
0.04
(d)
m-H
39
4.5.11 T=300K m-H 4.5.12
m-H 20kOe T=5K
T=300K

-0.8
-0.4
0.0
0.4
0.8
1.2
-0.03
-0.02
-0.01
0.00
0.01
0.02
0.03
0.04
m-H
0%5%10%15%
m-H

c PL 650
650
XRD50nm120nmZnO(002)
200nm PL 50nm 120nm 200nm
XRD
SQUIDT=5KHoT=300K
41

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