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Spin Hall Effect induced by resonant scattering on impurities in
metals
Peter M LevyNew York University
In collaboration withAlbert Fert
Unite Mixte de Physique CNRS,and Universite Paris-Sud
0
0
Spin current
Spin current without charge current
Intrinsic SHE:
due to S-0 effects on the wave functions of the lattice
Extrinsic SHE:
due to S-0 terms of scattering potentials
Spin Hall Effect (SHE)
w
t = thickness
xy
DetectionFerromagnetic contact
nonmagnetic contact
Injection of spin-polarized current
V 0
S. Zhang, PRL 85, 393 (2000)
€
Velec
€
Velec +(1+ P)
2μ↑ +
(1 − P)
2μ↓
How the SHE could be used in spintronic applications:
Spintronics need currents that are spin polarized. The conventional method of obtaining a polarized current is to pass an ordinary charge current through aferromagnetic metal.
However, it is difficult to integrate ferromagnetic metals with CMOS [silicon-based]circuits that make up the active memory of computers. Therefore there is great interest in finding nonmagnetic metals or semiconductors which are capable of converting charge to spin currents. As we will see the Spin Hall Effect has this potential; this has lead to the current interest in this effect.
The origins of the SHE are the same as those that have produced the AnomalousHall Effect (AHE) which has been known for over 6-7 decades. The AHE is causedby ordinary charge currents and produces additional contributions to the ordinaryHall effect; it is caused by spin-orbit coupling effects on the band structure, defect scattering, and the expression for the electric current (anomalous velocity or side jump).
The SHE is caused by the same mechanisms but relies on the presence of a spin-polarized current.
Previous work on the SHE:
The term Spin Hall Effect was first used by Jorge Hirsch PRL 83, 1834 (1999).
The idea of a SHE was first proposed by M. I.Dyakonov and V. I. Perel, Phys. Lett. A 35, 459 (1971).
Shufeng Zhang made the first realistic calculation of the signal produced by thisEffect in metals with finite spin diffusion lengths. PRL 85, 393 (2000).
It was further studied by amongst others: J. Sinova, D. Culcer, Q. Niu, N. A. Sinitsyn, T. Jungwirth, A. H. MacDonald, PRL 92, 126603 (2004). Also, seearticles by Jairo Sinova in PRB and PRL 2004-2010; and Sinova’s Viewpoint article “Spin Hall effect goes electrical” in Physics 3, 82 (2010).
1/T
RH/R0
Introduction: Hall effect due to magnetic impurities in metals
Skew scattering
Mn impurities in Cu
No contribution to the Hall effect
Spin-polarizes the current
1981
The SHE of nonmagnetic Cu alloys
could be detected
using the spin-polarized current
induced by Mn impurities (0.01%)
Today
The SHE of nonmagnetic conductors
can be detected
by injecting a spin-polarized current
from a ferromagntic contact
€
rE =
(x ρ ±Mn + y ρ T ) my ρ xy
T
±y ρ xyT (x ρ ±
Mn + y ρ T )
r j ±
€
Vy ∝j+ − j−
j+ + j−
yρ xyT with
j+ − j−
j+ + j−
∝< SzMn >∝
H
T→
RH Vy/H 1/T
skew scat. identified by 1/T contrib. to RHscat
A. Fert and O. Jaoul, PRL 28, 303, 1972
H of skew scatt.
Side jump H c 0
Gd + Lu impuritiesNi + various impurities
R.Asomoza, AF et al, JLCM 1983
j =3/2
j =5/2
Spin-orbit split
5d states of Lu
SHE induced by resonant scattering on spin-orbit split impurity d levels
Partial wave phase shift analysis of resonant scattering (Friedel’s virtual bound state model)
E
EF
Accomodation of one 5d electron (Z5d=1 for Lu)
Skew scattering: scattering
probability to the right scattering probability to the left
H= xy/xx = constant, xx cI, xy cI
x
Re-emission to the right at
time t
Re-emission to the left at
time t+t
Side-jump y = vt of the center of mass
Scattering with side-jump: side-jump of the mass center of
the scattered electrons
H = y/ cI , xy= H xx (cI)2
H = y/
I cI
y
Re-emission probability to the right = p
Re-emission probability to the left = p(1-p)
*
*
the deflection angle H
is characteristic of the scattering asymmetry Ex j
IIxxHxyy
IHx cdtE
m
nedtj
0
2
H
x
y x
y
Ey
IIxxI
IIxx
IxxHxy
cc
cy
, as 1
2
Spin up el.
Spin up el.