5
TVS Diode Array (SPA ® Diodes) Low Capacitance ESD and Surge Protection - SP1255P Series © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/06/19 Description Applications The SP1255P integrates three channels of ultra-low capacitance steering diodes and a low voltage TVS diode to provide maximum protection of the USB data and ID pins against ESD per the IEC 61000-4-2 standard. An additional 12V TVS diode is included to provide lightning surge protection for the USB V BUS pin up to 100A (t P =8/20μs) per the IEC 61000-4-5 standard. The SP1255P provides superior protection for current intensive applications such as fast charging peripharals. The SP1255P comes in a space saving 2.0x1.8mm μDFN package with a typical height of 0.55mm making it an ideal solution for smart phones, tablets, and other portable electronics. Features • RoHS compliant and lead-free • AEC-101 qualified For USB Voltage Bus Pin (V BUS ) • ESD, IEC 61000-4-2, ±30kV contact, ±30kV air • EFT, IEC 61000-4-4, 80A (t P =5/50ns) • Lightning, IEC 61000-4-5, 100A (t P =8/20μs) • Protection for V BUS operating up to 12V • Benchmark setting protection • High current handling capability for fast charging applications USB 2.0 USB OTG μUSB Protection for the V BUS circuit on USB2.0 Fast Charging Pinout Functional Block Diagram PIN 2 (D+) PIN 3 (D-) PIN 4 (ID) PIN 1 (V ) BUS PIN 5,6 (GND) Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. SP1255P Series 0.5pF, 12kV Diode Array for μUSB RoHS Pb GREEN For USB Data Pin (D+, D-, ID) • ESD, IEC 61000-4-2, ±12kV contact, ±15kV air • EFT, IEC 61000-4-4, 40A (t P =5/50ns) • Lightning, IEC 61000-4-5 2nd edition, 4A (t P =8/20μs) • 0.5pF capacitance • Low clamping voltage and dynamic resistance (0.3Ω) Bottom View Additional Information Datasheet Samples Resources

SP1255P Series 0.5pF, 12kV Diode Array for μUSB Pb/media/electronics/... · 2021. 5. 10. · E F P1 P2 D1 W T K0 B0 A0 5 5 22.12 ø13.22 ø179.90 ø70.55 ø155.37 ø15.57 ø58.11

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Page 1: SP1255P Series 0.5pF, 12kV Diode Array for μUSB Pb/media/electronics/... · 2021. 5. 10. · E F P1 P2 D1 W T K0 B0 A0 5 5 22.12 ø13.22 ø179.90 ø70.55 ø155.37 ø15.57 ø58.11

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

Description

Applications

The SP1255P integrates three channels of ultra-low capacitance steering diodes and a low voltage TVS diode to provide maximum protection of the USB data and ID pins against ESD per the IEC 61000-4-2 standard An additional 12V TVS diode is included to provide lightning surge protection for the USB VBUS pin up to 100A (tP=820μs) per the IEC 61000-4-5 standard The SP1255P provides superior protection for current intensive applications such as fast charging peripharals

The SP1255P comes in a space saving 20x18mm μDFN package with a typical height of 055mm making it an ideal solution for smart phones tablets and other portable electronics

Features

bull RoHS compliant and lead-free

bull AEC-101 qualified

For USB Voltage Bus Pin (VBUS)

bull ESD IEC 61000-4-2 plusmn30kV contact plusmn30kV air

bull EFT IEC 61000-4-4 80A (tP=550ns)

bull Lightning IEC 61000-4-5 100A (tP=820μs)

bull Protection for VBUS operating up to 12V

bull Benchmark setting protection

bull High current handling capability for fast charging applications

bull USB 20

bull USB OTG

bull μUSB

bull Protection for the VBUS circuit on USB20 Fast Charging

Pinout

Functional Block Diagram

PIN 2 (D+)PIN 3 (D-)PIN 4 (ID)

PIN 1(V )BUS

PIN 56 (GND)

Life Support Note

Not Intended for Use in Life Support or Life Saving Applications

The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated

SP1255P Series 05pF 12kV Diode Array for μUSB RoHS Pb GREEN

For USB Data Pin (D+ D- ID)

bull ESD IEC 61000-4-2 plusmn12kV contact plusmn15kV air

bull EFT IEC 61000-4-4 40A (tP=550ns)

bull Lightning IEC 61000-4-5 2nd edition 4A (tP=820μs)

bull 05pF capacitance

bull Low clamping voltage and dynamic resistance (03Ω)

Bottom View

Additional Information

Datasheet SamplesResources

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

SP

301

2

CAUTION Stresses above those listed in ldquoAbsolute Maximum Ratingsrdquo may cause permanent damage to the device This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied

Absolute Maximum Ratings

Symbol Parameter Value Units

IPP (Pin 1) Peak Current (tp=820μs) 100 A

IPP (Pin 2-4) Peak Current (tp=820μs) 4 A

TOP Operating Temperature -40 to 125 degC

TSTOR Storage Temperature -55 to 150 degC

Electrical Characteristics (TOP=25ordmC)

Parameter Symbol Test Conditions Min Typ Max Units

USB VBUS (Pin 1)

Reverse Standoff Voltage VRWM Pin 1 to GND 12 V

Reverse Breakdown Voltage VBR IT=1mA Pin 1 to GND 130 135 165 V

Reverse Leakage Current ILEAK VR=12V Pin 1 to GND 01 microA

Forward Voltage VF IF=10mA GND to Pin 1 06 07 10 V

Clamp Voltage1 VC

IPP=30A tp=820micros Fwd 165 18 V

IPP=100A tp=820micros Fwd 195 25 V

ESD Withstand Voltage1 VESD

IEC 61000-4-2 (Contact) plusmn30 kV

IEC 61000-4-2 (Air) plusmn30 kV

Diode Capacitance1 CD Reverse Bias=0V f=1MHz 1300 2500 pF

USB D+ D- ID (Pin 2 3 4)

Reverse Standoff Voltage VRWM Pin 2 3 and 4 to GND 4 V

Reverse Breakdown Voltage VBR IT=2microA Pin 2 3 and 4 to GND 45 60 75 V

Reverse Leakage Current ILEAK

VR=2V Pin 2 3 and 4 to GND 002microA

VR=4V Pin 2 3 and 4 to GND 01

Clamp Voltage1 VC

IPP=1A tp=820micros Fwd 66 80 V

IPP=2A tp=820micros Fwd 70 85 V

Dynamic Resistance RDYN TLP tP=100ns Pin 2 3 and 4 to GND2 03 Ω

ESD Withstand Voltage1 VESD

IEC 61000-4-2 (Contact) plusmn12 kV

IEC 61000-4-2 (Air) plusmn15 kV

Diode Capacitance1 CIO-GND Reverse Bias=0V f=1MHz 05 06 pF

Note 1 Parameter is guaranteed by design andor device characterization 2 Transmission Line Pulse (TLP) Test Setting tP=100ns tr=02ns ITLP and VTLP averaging window star t1=70ns to t2=90ns

0

100

200

300

400

500

600

700

800

900

1000

1100

0 1 2 3 4 5 6 7 8 9 10 11 12

Capa

citan

ce (

pF)

Bias Voltage (V)

Capacitance vs Reverse Bias (Pin1 to GND) Capacitance vs Reverse Bias (Pin2 3 4 to GND)

0

02

04

06

08

1

0 05 1 15 2 25 3 35 4

Capa

citan

ce (p

F)

Bias Voltage (V)

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

00

40

80

120

160

200

240

280

00 200 400 600 800 1000

Cla

mp

Vo

ltag

e (V

C)

Peak Pulse Current - IPP (A)

Clamping Voltage vs Peak Pulse Current (Pin1 to GND)

Cla

mp

Vo

ltag

e (V

C)

Peak Pulse Current - IPP (A)

00

20

40

60

80

100

120

10 20 30 40 50

Clamping Voltage vs Peak Pulse Current (Pin2 3 4 to GND)

1

10

100

01 1 10 100 1000

Pe

ak

Pu

lse

Po

wer

-P

pp

(W)

Pulse Duration - tp( micros)

1000

Non-Repetitive Peak Pulse Power vs Pulse Duration (Pin2 3 4 to GND)

01

1

10

100

01 1 10 100 1000

Pe

ak

Pu

lse

Pow

er -P

pp

(kW

)

Pulse Duration tp(micros)

Non-Repetitive Peak Pulse Power vs Pulse Duration (Pin1 to GND)

TLP

Curr

ent (

A)

TLP Volts (V)

0

2

4

6

8

10

12

14

16

0 2 4 6 8 10 12

Positive Transmission Line Pulsing (TLP) Plot (Pin 2 3 4 to GND )

TLP C

urre

nt (A

)

TLP Volts (V)

-16

-14

-12

-10

-8

-6

-4

-2

0

-6 -5 -4 -3 -2 -1 0

Negative Transmission Line Pulsing (TLP) Plot (Pin 2 3 4 to GND )

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

Time

Tem

pera

ture

TP

TL

TS(max)

TS(min)

25

tP

tL

tS

time to peak temperature

PreheatPreheat

Ramp-upRamp-up

Ramp-downRamp-do

Critical ZoneTL to TPCritical ZoneTL to TP

Reflow Condition Pb ndash Free assembly

Pre Heat

- Temperature Min (Ts(min)) 150degC

- Temperature Max (Ts(max)) 200degC

- Time (min to max) (ts) 60 ndash 180 secs

Average ramp up rate (Liquidus) Temp (TL) to peak 3degCsecond max

TS(max) to TL - Ramp-up Rate 3degCsecond max

Reflow- Temperature (TL) (Liquidus) 217degC

- Temperature (tL) 60 ndash 150 seconds

Peak Temperature (TP) 260+0-5 degC

Time within 5degC of actual peak Temperature (tp) 20 ndash 40 seconds

Ramp-down Rate 6degCsecond max

Time 25degC to peak Temperature (TP) 8 minutes Max

Do not exceed 260degC

Soldering Parameters

Product Characteristics

Lead Plating Pre-Plated Frame

Lead Material Copper Alloy

Lead Coplanarity 00004 inches (0102mm)

Substrate material Silicon

Body Material Molded Epoxy

Flammability UL 94 V-0

Notes 1 All dimensions are in millimeters2 Dimensions include solder plating3 Dimensions are exclusive of mold flash amp metal burr4 Blo is facing up for mold and facing down for trimform ie reverse trimform5 Package surface matte finish VDI 11-13

Part Numbering System

Part Marking System

SP 1255P U T G

SeriesPackage

U=microDFN-6

T= Tape amp Reel

G= GreenTVS Diode Arrays(SPA Diodes)reg

A G 3Product Series

= SP1255PNumber of ChannelsA

Assembly Site

Ordering Information

Part Number Package Marking Min Order Qty Packaging Option P0P1 Packaging Specification

SP1255PUTG microDFN-6 G3 3000 Tape amp Reel ndash 8mm tape7rdquo reel 2mm4mm EIA RS-481A

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

Package Dimensions mdash microDFN-6 (18x20x055mm)

microDFN6 (18x20x055mm)

JEDEC MO-229

SymbolMillimeters Inches

Min Nom Max Min Nom Max

A 050 055 060 0020 0022 0024

A1 000 - 005 0000 - 0002

A3 015 Ref 0006 Ref

D 175 180 185 0069 0071 0073

E 195 200 205 0077 0079 0081

b 015 020 025 0006 0008 0010

L 020 030 040 0008 0012 0016

D2 035 045 055 0014 0018 0022

E2 074 084 094 0029 0033 0037

e 040 BSC 0016 BSC

e1 080 BSC 0031 BSC

B 080 BSC 0031 BSC

C 035 045 055 0014 0018 0022

F 081 084 087 0032 0033 0034

G 082 085 088 0032 0033 0034

J 024 025 026 0010 0010 0010

N 047 048 049 0018 0019 0020

P 024 025 026 0010 0010 0010

X 023 024 025 0009 0009 0009

Y 035 036 037 0014 0014 0014

Z 062 064 066 0024 0025 0026

Top View

Bottom View

Side View

Recommended Soldering Footprint

G

F

YP

B

C N J

X Z

Notes1 Dimension and tolerancing comform to ASME Y145M-19942 Controlling dimensions Millimeter Converted Inch dimensions are not necessarily exact

Embossed Carrier Tape amp Reel Specification mdash microDFN-6

Symbol Millimeters

A0 195 +- 005

B0 230 +- 005

D0 150 + 010

D1 Oslash 060 + 005

E 175 +- 010

F 350 +- 005

K0 075 +- 005

P0 200 +- 005

P1 400 +- 010

P2 400 +- 010

T 025 +- 002

W 800 + 030 - 010

P0 D0E

F

P1

P2

D1

W

T

B0K0

A0

5

5

221

2oslash1

322

oslash179

90

oslash155

37

oslash70

55oslash1

557

oslash58

11

243

2

146

111

904

Pin1 Location

Disclaimer Notice - Information furnished is believed to be accurate and reliable However users should independently evaluate the suitability of and test each product selected for their own applications Littelfuse products are not designed for and may not be used in all applications Read complete Disclaimer Notice at httpwwwlittelfusecomdisclaimer-electronics

Page 2: SP1255P Series 0.5pF, 12kV Diode Array for μUSB Pb/media/electronics/... · 2021. 5. 10. · E F P1 P2 D1 W T K0 B0 A0 5 5 22.12 ø13.22 ø179.90 ø70.55 ø155.37 ø15.57 ø58.11

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

SP

301

2

CAUTION Stresses above those listed in ldquoAbsolute Maximum Ratingsrdquo may cause permanent damage to the device This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied

Absolute Maximum Ratings

Symbol Parameter Value Units

IPP (Pin 1) Peak Current (tp=820μs) 100 A

IPP (Pin 2-4) Peak Current (tp=820μs) 4 A

TOP Operating Temperature -40 to 125 degC

TSTOR Storage Temperature -55 to 150 degC

Electrical Characteristics (TOP=25ordmC)

Parameter Symbol Test Conditions Min Typ Max Units

USB VBUS (Pin 1)

Reverse Standoff Voltage VRWM Pin 1 to GND 12 V

Reverse Breakdown Voltage VBR IT=1mA Pin 1 to GND 130 135 165 V

Reverse Leakage Current ILEAK VR=12V Pin 1 to GND 01 microA

Forward Voltage VF IF=10mA GND to Pin 1 06 07 10 V

Clamp Voltage1 VC

IPP=30A tp=820micros Fwd 165 18 V

IPP=100A tp=820micros Fwd 195 25 V

ESD Withstand Voltage1 VESD

IEC 61000-4-2 (Contact) plusmn30 kV

IEC 61000-4-2 (Air) plusmn30 kV

Diode Capacitance1 CD Reverse Bias=0V f=1MHz 1300 2500 pF

USB D+ D- ID (Pin 2 3 4)

Reverse Standoff Voltage VRWM Pin 2 3 and 4 to GND 4 V

Reverse Breakdown Voltage VBR IT=2microA Pin 2 3 and 4 to GND 45 60 75 V

Reverse Leakage Current ILEAK

VR=2V Pin 2 3 and 4 to GND 002microA

VR=4V Pin 2 3 and 4 to GND 01

Clamp Voltage1 VC

IPP=1A tp=820micros Fwd 66 80 V

IPP=2A tp=820micros Fwd 70 85 V

Dynamic Resistance RDYN TLP tP=100ns Pin 2 3 and 4 to GND2 03 Ω

ESD Withstand Voltage1 VESD

IEC 61000-4-2 (Contact) plusmn12 kV

IEC 61000-4-2 (Air) plusmn15 kV

Diode Capacitance1 CIO-GND Reverse Bias=0V f=1MHz 05 06 pF

Note 1 Parameter is guaranteed by design andor device characterization 2 Transmission Line Pulse (TLP) Test Setting tP=100ns tr=02ns ITLP and VTLP averaging window star t1=70ns to t2=90ns

0

100

200

300

400

500

600

700

800

900

1000

1100

0 1 2 3 4 5 6 7 8 9 10 11 12

Capa

citan

ce (

pF)

Bias Voltage (V)

Capacitance vs Reverse Bias (Pin1 to GND) Capacitance vs Reverse Bias (Pin2 3 4 to GND)

0

02

04

06

08

1

0 05 1 15 2 25 3 35 4

Capa

citan

ce (p

F)

Bias Voltage (V)

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

00

40

80

120

160

200

240

280

00 200 400 600 800 1000

Cla

mp

Vo

ltag

e (V

C)

Peak Pulse Current - IPP (A)

Clamping Voltage vs Peak Pulse Current (Pin1 to GND)

Cla

mp

Vo

ltag

e (V

C)

Peak Pulse Current - IPP (A)

00

20

40

60

80

100

120

10 20 30 40 50

Clamping Voltage vs Peak Pulse Current (Pin2 3 4 to GND)

1

10

100

01 1 10 100 1000

Pe

ak

Pu

lse

Po

wer

-P

pp

(W)

Pulse Duration - tp( micros)

1000

Non-Repetitive Peak Pulse Power vs Pulse Duration (Pin2 3 4 to GND)

01

1

10

100

01 1 10 100 1000

Pe

ak

Pu

lse

Pow

er -P

pp

(kW

)

Pulse Duration tp(micros)

Non-Repetitive Peak Pulse Power vs Pulse Duration (Pin1 to GND)

TLP

Curr

ent (

A)

TLP Volts (V)

0

2

4

6

8

10

12

14

16

0 2 4 6 8 10 12

Positive Transmission Line Pulsing (TLP) Plot (Pin 2 3 4 to GND )

TLP C

urre

nt (A

)

TLP Volts (V)

-16

-14

-12

-10

-8

-6

-4

-2

0

-6 -5 -4 -3 -2 -1 0

Negative Transmission Line Pulsing (TLP) Plot (Pin 2 3 4 to GND )

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

Time

Tem

pera

ture

TP

TL

TS(max)

TS(min)

25

tP

tL

tS

time to peak temperature

PreheatPreheat

Ramp-upRamp-up

Ramp-downRamp-do

Critical ZoneTL to TPCritical ZoneTL to TP

Reflow Condition Pb ndash Free assembly

Pre Heat

- Temperature Min (Ts(min)) 150degC

- Temperature Max (Ts(max)) 200degC

- Time (min to max) (ts) 60 ndash 180 secs

Average ramp up rate (Liquidus) Temp (TL) to peak 3degCsecond max

TS(max) to TL - Ramp-up Rate 3degCsecond max

Reflow- Temperature (TL) (Liquidus) 217degC

- Temperature (tL) 60 ndash 150 seconds

Peak Temperature (TP) 260+0-5 degC

Time within 5degC of actual peak Temperature (tp) 20 ndash 40 seconds

Ramp-down Rate 6degCsecond max

Time 25degC to peak Temperature (TP) 8 minutes Max

Do not exceed 260degC

Soldering Parameters

Product Characteristics

Lead Plating Pre-Plated Frame

Lead Material Copper Alloy

Lead Coplanarity 00004 inches (0102mm)

Substrate material Silicon

Body Material Molded Epoxy

Flammability UL 94 V-0

Notes 1 All dimensions are in millimeters2 Dimensions include solder plating3 Dimensions are exclusive of mold flash amp metal burr4 Blo is facing up for mold and facing down for trimform ie reverse trimform5 Package surface matte finish VDI 11-13

Part Numbering System

Part Marking System

SP 1255P U T G

SeriesPackage

U=microDFN-6

T= Tape amp Reel

G= GreenTVS Diode Arrays(SPA Diodes)reg

A G 3Product Series

= SP1255PNumber of ChannelsA

Assembly Site

Ordering Information

Part Number Package Marking Min Order Qty Packaging Option P0P1 Packaging Specification

SP1255PUTG microDFN-6 G3 3000 Tape amp Reel ndash 8mm tape7rdquo reel 2mm4mm EIA RS-481A

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

Package Dimensions mdash microDFN-6 (18x20x055mm)

microDFN6 (18x20x055mm)

JEDEC MO-229

SymbolMillimeters Inches

Min Nom Max Min Nom Max

A 050 055 060 0020 0022 0024

A1 000 - 005 0000 - 0002

A3 015 Ref 0006 Ref

D 175 180 185 0069 0071 0073

E 195 200 205 0077 0079 0081

b 015 020 025 0006 0008 0010

L 020 030 040 0008 0012 0016

D2 035 045 055 0014 0018 0022

E2 074 084 094 0029 0033 0037

e 040 BSC 0016 BSC

e1 080 BSC 0031 BSC

B 080 BSC 0031 BSC

C 035 045 055 0014 0018 0022

F 081 084 087 0032 0033 0034

G 082 085 088 0032 0033 0034

J 024 025 026 0010 0010 0010

N 047 048 049 0018 0019 0020

P 024 025 026 0010 0010 0010

X 023 024 025 0009 0009 0009

Y 035 036 037 0014 0014 0014

Z 062 064 066 0024 0025 0026

Top View

Bottom View

Side View

Recommended Soldering Footprint

G

F

YP

B

C N J

X Z

Notes1 Dimension and tolerancing comform to ASME Y145M-19942 Controlling dimensions Millimeter Converted Inch dimensions are not necessarily exact

Embossed Carrier Tape amp Reel Specification mdash microDFN-6

Symbol Millimeters

A0 195 +- 005

B0 230 +- 005

D0 150 + 010

D1 Oslash 060 + 005

E 175 +- 010

F 350 +- 005

K0 075 +- 005

P0 200 +- 005

P1 400 +- 010

P2 400 +- 010

T 025 +- 002

W 800 + 030 - 010

P0 D0E

F

P1

P2

D1

W

T

B0K0

A0

5

5

221

2oslash1

322

oslash179

90

oslash155

37

oslash70

55oslash1

557

oslash58

11

243

2

146

111

904

Pin1 Location

Disclaimer Notice - Information furnished is believed to be accurate and reliable However users should independently evaluate the suitability of and test each product selected for their own applications Littelfuse products are not designed for and may not be used in all applications Read complete Disclaimer Notice at httpwwwlittelfusecomdisclaimer-electronics

Page 3: SP1255P Series 0.5pF, 12kV Diode Array for μUSB Pb/media/electronics/... · 2021. 5. 10. · E F P1 P2 D1 W T K0 B0 A0 5 5 22.12 ø13.22 ø179.90 ø70.55 ø155.37 ø15.57 ø58.11

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

00

40

80

120

160

200

240

280

00 200 400 600 800 1000

Cla

mp

Vo

ltag

e (V

C)

Peak Pulse Current - IPP (A)

Clamping Voltage vs Peak Pulse Current (Pin1 to GND)

Cla

mp

Vo

ltag

e (V

C)

Peak Pulse Current - IPP (A)

00

20

40

60

80

100

120

10 20 30 40 50

Clamping Voltage vs Peak Pulse Current (Pin2 3 4 to GND)

1

10

100

01 1 10 100 1000

Pe

ak

Pu

lse

Po

wer

-P

pp

(W)

Pulse Duration - tp( micros)

1000

Non-Repetitive Peak Pulse Power vs Pulse Duration (Pin2 3 4 to GND)

01

1

10

100

01 1 10 100 1000

Pe

ak

Pu

lse

Pow

er -P

pp

(kW

)

Pulse Duration tp(micros)

Non-Repetitive Peak Pulse Power vs Pulse Duration (Pin1 to GND)

TLP

Curr

ent (

A)

TLP Volts (V)

0

2

4

6

8

10

12

14

16

0 2 4 6 8 10 12

Positive Transmission Line Pulsing (TLP) Plot (Pin 2 3 4 to GND )

TLP C

urre

nt (A

)

TLP Volts (V)

-16

-14

-12

-10

-8

-6

-4

-2

0

-6 -5 -4 -3 -2 -1 0

Negative Transmission Line Pulsing (TLP) Plot (Pin 2 3 4 to GND )

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

Time

Tem

pera

ture

TP

TL

TS(max)

TS(min)

25

tP

tL

tS

time to peak temperature

PreheatPreheat

Ramp-upRamp-up

Ramp-downRamp-do

Critical ZoneTL to TPCritical ZoneTL to TP

Reflow Condition Pb ndash Free assembly

Pre Heat

- Temperature Min (Ts(min)) 150degC

- Temperature Max (Ts(max)) 200degC

- Time (min to max) (ts) 60 ndash 180 secs

Average ramp up rate (Liquidus) Temp (TL) to peak 3degCsecond max

TS(max) to TL - Ramp-up Rate 3degCsecond max

Reflow- Temperature (TL) (Liquidus) 217degC

- Temperature (tL) 60 ndash 150 seconds

Peak Temperature (TP) 260+0-5 degC

Time within 5degC of actual peak Temperature (tp) 20 ndash 40 seconds

Ramp-down Rate 6degCsecond max

Time 25degC to peak Temperature (TP) 8 minutes Max

Do not exceed 260degC

Soldering Parameters

Product Characteristics

Lead Plating Pre-Plated Frame

Lead Material Copper Alloy

Lead Coplanarity 00004 inches (0102mm)

Substrate material Silicon

Body Material Molded Epoxy

Flammability UL 94 V-0

Notes 1 All dimensions are in millimeters2 Dimensions include solder plating3 Dimensions are exclusive of mold flash amp metal burr4 Blo is facing up for mold and facing down for trimform ie reverse trimform5 Package surface matte finish VDI 11-13

Part Numbering System

Part Marking System

SP 1255P U T G

SeriesPackage

U=microDFN-6

T= Tape amp Reel

G= GreenTVS Diode Arrays(SPA Diodes)reg

A G 3Product Series

= SP1255PNumber of ChannelsA

Assembly Site

Ordering Information

Part Number Package Marking Min Order Qty Packaging Option P0P1 Packaging Specification

SP1255PUTG microDFN-6 G3 3000 Tape amp Reel ndash 8mm tape7rdquo reel 2mm4mm EIA RS-481A

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

Package Dimensions mdash microDFN-6 (18x20x055mm)

microDFN6 (18x20x055mm)

JEDEC MO-229

SymbolMillimeters Inches

Min Nom Max Min Nom Max

A 050 055 060 0020 0022 0024

A1 000 - 005 0000 - 0002

A3 015 Ref 0006 Ref

D 175 180 185 0069 0071 0073

E 195 200 205 0077 0079 0081

b 015 020 025 0006 0008 0010

L 020 030 040 0008 0012 0016

D2 035 045 055 0014 0018 0022

E2 074 084 094 0029 0033 0037

e 040 BSC 0016 BSC

e1 080 BSC 0031 BSC

B 080 BSC 0031 BSC

C 035 045 055 0014 0018 0022

F 081 084 087 0032 0033 0034

G 082 085 088 0032 0033 0034

J 024 025 026 0010 0010 0010

N 047 048 049 0018 0019 0020

P 024 025 026 0010 0010 0010

X 023 024 025 0009 0009 0009

Y 035 036 037 0014 0014 0014

Z 062 064 066 0024 0025 0026

Top View

Bottom View

Side View

Recommended Soldering Footprint

G

F

YP

B

C N J

X Z

Notes1 Dimension and tolerancing comform to ASME Y145M-19942 Controlling dimensions Millimeter Converted Inch dimensions are not necessarily exact

Embossed Carrier Tape amp Reel Specification mdash microDFN-6

Symbol Millimeters

A0 195 +- 005

B0 230 +- 005

D0 150 + 010

D1 Oslash 060 + 005

E 175 +- 010

F 350 +- 005

K0 075 +- 005

P0 200 +- 005

P1 400 +- 010

P2 400 +- 010

T 025 +- 002

W 800 + 030 - 010

P0 D0E

F

P1

P2

D1

W

T

B0K0

A0

5

5

221

2oslash1

322

oslash179

90

oslash155

37

oslash70

55oslash1

557

oslash58

11

243

2

146

111

904

Pin1 Location

Disclaimer Notice - Information furnished is believed to be accurate and reliable However users should independently evaluate the suitability of and test each product selected for their own applications Littelfuse products are not designed for and may not be used in all applications Read complete Disclaimer Notice at httpwwwlittelfusecomdisclaimer-electronics

Page 4: SP1255P Series 0.5pF, 12kV Diode Array for μUSB Pb/media/electronics/... · 2021. 5. 10. · E F P1 P2 D1 W T K0 B0 A0 5 5 22.12 ø13.22 ø179.90 ø70.55 ø155.37 ø15.57 ø58.11

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

Time

Tem

pera

ture

TP

TL

TS(max)

TS(min)

25

tP

tL

tS

time to peak temperature

PreheatPreheat

Ramp-upRamp-up

Ramp-downRamp-do

Critical ZoneTL to TPCritical ZoneTL to TP

Reflow Condition Pb ndash Free assembly

Pre Heat

- Temperature Min (Ts(min)) 150degC

- Temperature Max (Ts(max)) 200degC

- Time (min to max) (ts) 60 ndash 180 secs

Average ramp up rate (Liquidus) Temp (TL) to peak 3degCsecond max

TS(max) to TL - Ramp-up Rate 3degCsecond max

Reflow- Temperature (TL) (Liquidus) 217degC

- Temperature (tL) 60 ndash 150 seconds

Peak Temperature (TP) 260+0-5 degC

Time within 5degC of actual peak Temperature (tp) 20 ndash 40 seconds

Ramp-down Rate 6degCsecond max

Time 25degC to peak Temperature (TP) 8 minutes Max

Do not exceed 260degC

Soldering Parameters

Product Characteristics

Lead Plating Pre-Plated Frame

Lead Material Copper Alloy

Lead Coplanarity 00004 inches (0102mm)

Substrate material Silicon

Body Material Molded Epoxy

Flammability UL 94 V-0

Notes 1 All dimensions are in millimeters2 Dimensions include solder plating3 Dimensions are exclusive of mold flash amp metal burr4 Blo is facing up for mold and facing down for trimform ie reverse trimform5 Package surface matte finish VDI 11-13

Part Numbering System

Part Marking System

SP 1255P U T G

SeriesPackage

U=microDFN-6

T= Tape amp Reel

G= GreenTVS Diode Arrays(SPA Diodes)reg

A G 3Product Series

= SP1255PNumber of ChannelsA

Assembly Site

Ordering Information

Part Number Package Marking Min Order Qty Packaging Option P0P1 Packaging Specification

SP1255PUTG microDFN-6 G3 3000 Tape amp Reel ndash 8mm tape7rdquo reel 2mm4mm EIA RS-481A

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

Package Dimensions mdash microDFN-6 (18x20x055mm)

microDFN6 (18x20x055mm)

JEDEC MO-229

SymbolMillimeters Inches

Min Nom Max Min Nom Max

A 050 055 060 0020 0022 0024

A1 000 - 005 0000 - 0002

A3 015 Ref 0006 Ref

D 175 180 185 0069 0071 0073

E 195 200 205 0077 0079 0081

b 015 020 025 0006 0008 0010

L 020 030 040 0008 0012 0016

D2 035 045 055 0014 0018 0022

E2 074 084 094 0029 0033 0037

e 040 BSC 0016 BSC

e1 080 BSC 0031 BSC

B 080 BSC 0031 BSC

C 035 045 055 0014 0018 0022

F 081 084 087 0032 0033 0034

G 082 085 088 0032 0033 0034

J 024 025 026 0010 0010 0010

N 047 048 049 0018 0019 0020

P 024 025 026 0010 0010 0010

X 023 024 025 0009 0009 0009

Y 035 036 037 0014 0014 0014

Z 062 064 066 0024 0025 0026

Top View

Bottom View

Side View

Recommended Soldering Footprint

G

F

YP

B

C N J

X Z

Notes1 Dimension and tolerancing comform to ASME Y145M-19942 Controlling dimensions Millimeter Converted Inch dimensions are not necessarily exact

Embossed Carrier Tape amp Reel Specification mdash microDFN-6

Symbol Millimeters

A0 195 +- 005

B0 230 +- 005

D0 150 + 010

D1 Oslash 060 + 005

E 175 +- 010

F 350 +- 005

K0 075 +- 005

P0 200 +- 005

P1 400 +- 010

P2 400 +- 010

T 025 +- 002

W 800 + 030 - 010

P0 D0E

F

P1

P2

D1

W

T

B0K0

A0

5

5

221

2oslash1

322

oslash179

90

oslash155

37

oslash70

55oslash1

557

oslash58

11

243

2

146

111

904

Pin1 Location

Disclaimer Notice - Information furnished is believed to be accurate and reliable However users should independently evaluate the suitability of and test each product selected for their own applications Littelfuse products are not designed for and may not be used in all applications Read complete Disclaimer Notice at httpwwwlittelfusecomdisclaimer-electronics

Page 5: SP1255P Series 0.5pF, 12kV Diode Array for μUSB Pb/media/electronics/... · 2021. 5. 10. · E F P1 P2 D1 W T K0 B0 A0 5 5 22.12 ø13.22 ø179.90 ø70.55 ø155.37 ø15.57 ø58.11

TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series

copy 2019 Littelfuse IncSpecifications are subject to change without notice

Revised 090619

Package Dimensions mdash microDFN-6 (18x20x055mm)

microDFN6 (18x20x055mm)

JEDEC MO-229

SymbolMillimeters Inches

Min Nom Max Min Nom Max

A 050 055 060 0020 0022 0024

A1 000 - 005 0000 - 0002

A3 015 Ref 0006 Ref

D 175 180 185 0069 0071 0073

E 195 200 205 0077 0079 0081

b 015 020 025 0006 0008 0010

L 020 030 040 0008 0012 0016

D2 035 045 055 0014 0018 0022

E2 074 084 094 0029 0033 0037

e 040 BSC 0016 BSC

e1 080 BSC 0031 BSC

B 080 BSC 0031 BSC

C 035 045 055 0014 0018 0022

F 081 084 087 0032 0033 0034

G 082 085 088 0032 0033 0034

J 024 025 026 0010 0010 0010

N 047 048 049 0018 0019 0020

P 024 025 026 0010 0010 0010

X 023 024 025 0009 0009 0009

Y 035 036 037 0014 0014 0014

Z 062 064 066 0024 0025 0026

Top View

Bottom View

Side View

Recommended Soldering Footprint

G

F

YP

B

C N J

X Z

Notes1 Dimension and tolerancing comform to ASME Y145M-19942 Controlling dimensions Millimeter Converted Inch dimensions are not necessarily exact

Embossed Carrier Tape amp Reel Specification mdash microDFN-6

Symbol Millimeters

A0 195 +- 005

B0 230 +- 005

D0 150 + 010

D1 Oslash 060 + 005

E 175 +- 010

F 350 +- 005

K0 075 +- 005

P0 200 +- 005

P1 400 +- 010

P2 400 +- 010

T 025 +- 002

W 800 + 030 - 010

P0 D0E

F

P1

P2

D1

W

T

B0K0

A0

5

5

221

2oslash1

322

oslash179

90

oslash155

37

oslash70

55oslash1

557

oslash58

11

243

2

146

111

904

Pin1 Location

Disclaimer Notice - Information furnished is believed to be accurate and reliable However users should independently evaluate the suitability of and test each product selected for their own applications Littelfuse products are not designed for and may not be used in all applications Read complete Disclaimer Notice at httpwwwlittelfusecomdisclaimer-electronics