15
Si-Strip FEE development. Status E. Atkin Moscow Engineering Physics Institute (State University) – MEPhI, Electronics Department, [email protected] A.Voronin Skobeltsyn Institute of Nuclear Physics / Moscow State University – SINP / MSU, [email protected] FEE working group session, Friday, March 11, 2005

Si-Strip FEE development. Status

Embed Size (px)

DESCRIPTION

FEE working group session , Friday, March 11, 2005. Si-Strip FEE development. Status. E. Atkin Moscow Engineering Physics Institute (State University) – MEPhI, Electronics Department , [email protected] A.Voronin - PowerPoint PPT Presentation

Citation preview

Page 1: Si-Strip FEE development. Status

Si-Strip FEE development. Status

E. Atkin Moscow Engineering Physics Institute (State University) – MEPhI, Electronics Department, [email protected]

A.Voronin Skobeltsyn Institute of Nuclear Physics / Moscow State University – SINP / MSU, [email protected]

FEE working group session, Friday, March 11,

2005

Page 2: Si-Strip FEE development. Status

CBM Collaboration meeting, 9-11 March 2005, GSI

Outline

View on FEE Structure development What is between analog part and ADC? Few analog FEE structures Digital processing prerequisites

ASIC technology Status on Design Kits

Planning and Organization: People involved Nearest plans I & II (2005-06) Candidates for Sponsorship

Page 3: Si-Strip FEE development. Status

CBM Collaboration meeting, 9-11 March 2005, GSI

View on FEE Structure development

“Each FEE channel consists of three parts: analog front-end, digitization plus digital back-end. The Strip FEE development is currently still in the first part of the conceptual design phase, where the design space is explored and the essential R&D issues are identified” (from TSR).

The sketch given there supposes, that each channel has its own ADC. It is inefficient from the viewpoints of power consumption and chip area (cost).

That forces us to develop the data driven architecture based on the technique of derandomization.

Multichannel analog part ?

Set of ADCs

Figure 1

Page 4: Si-Strip FEE development. Status

CBM Collaboration meeting, 9-11 March 2005, GSI

What is between analog part and ADC?(I)

Analog derandomizer is a unit performing neuron-like processing, but in analog field.

It is a deadtime free analog unit with n-inputs and m-outputs, n>m.Thus it allows to reduce the number of following ADCs.The derandomization procedure implies the skipping of empty channels and thus is indivisibly bound with data sparsification. Efficient processing of the randomly appearing signals by blocks, having a dead time, needs the choice of a proper architecture.

Relevant references:

1. Design of a derandomizer with a buffer controller. University of Stockholm http://www.sysf.physto.se/kurser/digsyst/project1.html, 1999.

2. P. O’Connor, G. De Geronimo, A. Kandasamy. Amplitude and Time Measurement ASIC With Analog Derandomization: First Results. IEEE Trans. on NS, v. 50, N 4, 2003, p.892-897.

Page 5: Si-Strip FEE development. Status

CBM Collaboration meeting, 9-11 March 2005, GSI

What is between analog part and ADC?(II)

Usually a derandomizer incorporates or is followed by such functional blocks as:

peak detectors (T&Hs) for amplitude measurement

TACs for time measurement

hit finder (fast low threshold LE discriminator)

arbitration logic

crosspoint switch

analog multiplexer

Page 6: Si-Strip FEE development. Status

Analog Storage + Analog Multiplex

Preamps + ShapersStorage(T&H or

PD)

MUX

ADC

IN1

IN2

INn

●●●

●●●

Figure 2

CLK

• bufferless deadtime• long readout time

Page 7: Si-Strip FEE development. Status

Analog Memory + Analog Multiplex

Multiple Storage Devices

Figure 3bFigure 3a

●●●

●●●

Preamps+Shapers

MUX

ADC

CLK

●●●

●●●

MUX

ADC

CLK

Analog

pipeline(SC memory)

Multiplestorage(interleavingT&H or PDs)

IN1

IN2

INn

Preamps+Shapers

IN1

IN2

INn

• deadtimeless• complex control• long readout time

• buffered• long readout time• high power consumption

Page 8: Si-Strip FEE development. Status

Crosspoint Switch

ToDSP

Figure 4a

Multiple storages shared by channelsOne storage per channel

●●●

●●●

●●●

ArbitrationComparators

Crosspoint switch

ADCs

IN1

IN2

INn

ToDSP

Figure 4b

Analogstoragedevices (T&H or PD)

Arbitration

ADCs

●●●

IN1

IN2

INn

●●●

Comparators

●●●

Preamps + Shapers

Address Address

Crosspoint switch

Analogstoragedevices (T&H or PD)

Preamps + Shapers

Page 9: Si-Strip FEE development. Status

CBM Collaboration meeting, 9-11 March 2005, GSI

Digital processing prerequisites (I)

8 Channels 40MHz ADC and 1280 MIPS DSP Module

M.& A. Alyushin, Electronics Department, [email protected]

Page 10: Si-Strip FEE development. Status

CBM Collaboration meeting, 9-11 March 2005, GSI

Digital processing prerequisites (II)

M.& A. Alyushin, Electronics Department, [email protected]

64-Channels Block for 40MHz 10-bit ADC and 10240 MIPS DSP

Page 11: Si-Strip FEE development. Status

CBM Collaboration meeting, 9-11 March 2005, GSI

ASIC Technology Status on Design Kits

Installed are (since Oct. 2004 meeting): UMC CMOS 0.13 µm AMIS CMOS 0.35 µm

Available are (not used yet): IHP Si-Ge Bi-CMOS 0.25 µm

Thinking about (just installed): UMC CMOS 0.18 µm as a main line for next 3-4 years according to TSR

Jan.05 !!!

We have some inertia in shifting our design flow from one process to another!In order to start the work of one design kit At least one person*month is needed!

Page 12: Si-Strip FEE development. Status

CBM Collaboration meeting, 9-11 March 2005, GSI

Planning and Organization in MEPhI:People involved

Electronics department M.Alyushin, E.Atkin, I.Ilyushchenko, A.Krasnuk, A.Silaev, Yu.Volkov

+ 7 diploma students (2005/06)

Microelectronics department and Atomic and Accelerator radiation centersYu.Bocharov, E.Onishchenko, V.Popov, A.Simakov

Department of PhysicsV.Emelianov

Coordination: MEPhI Research director, prof. B.Bogdanovich

Page 13: Si-Strip FEE development. Status

CBM Collaboration meeting, 9-11 March 2005, GSI

Nearest plans I (2005/06)

Development of building blocks for data-driven architecture, according to UMC CMOS 0.18 µm. Prototyping via Europractice (MPW).These blocks are:

Preamp Amplitude (slow) antialiasing and dynamic range saving shaper Timing (fast), hit defining shaper Low offset high-speed comparator both for hit finder and ADC. Studying both

clocked and non-clocked options Threshold DAC (6-8 bit) Fast low-bit (4…6 or 8 bit ?) ADC Analog Derandomizer (deadtime free analog unit with n-inputs and m-outputs,

n>m) Rail-to-rail op amp (high speed buffer)Common issues are: low power consumption, reasonable speed & chip area

Page 14: Si-Strip FEE development. Status

CBM Collaboration meeting, 9-11 March 2005, GSI

Nearest plans II (2005/06)

Design and production (via MPW) of a test purpose chip for SST prototyping, according to AMIS CMOS 0.35 µm rules Issues are: face-to-face interface to Si strip prototype, cost effective design

Lab tests of ICs manufactured

Radiation hardness tests of ICs

Development of FPGA based digital processing prototype

Page 15: Si-Strip FEE development. Status

CBM Collaboration meeting, 9-11 March 2005, GSI

Candidates for Sponsorship (2005/06)

ISTC

Russian Ministry on Education and Science

INTAS

FP7 (CORDIS)

other …