Upload
charles-ho
View
1.206
Download
53
Embed Size (px)
Citation preview
Sentaurus TCAD Training for CMOS Application
synopsys~ Predictable Success
Section 1. Course Outline
• Sentaurus TeAD Overview
• Sentaurus Workbench
• Sentaurus Process 10 & 20
• Tecplot SV
• Sentaurus Structure Editor - Building Meshes
• Sentaurus Device I-V simulation
• Inspect
synopsys' Predictable Success
4/2/2009
1
4/2/2009
Section 2. Course Outline
• 20/30 Sentaurus Structure Editor
• Ligament introduction
• C-V Device Simulation
• Breakdown Device Simulation
• 90nm nMOSFET Exercise
• pMOSFET Device Exercise
• SolvNet Resources
• SolvNet Introduction
• 2D Strained Silicon 45nm CMOS Reference Flow Demo
• 3D nMOSFET Demo
synopsys' Predictable Success
) I
synopsys' Predictable Success
2
reAD: What's it used for?
• TCAD is used to develop and semiconductor technologies
• Designers focus on the chip
• TCAD users focus on the transistor!
synopsys' Predictable Success
Putting Simulation to Work
You can learn to fly a jet by actually flying one at great expense and risk
Or you can use a flight simulator at a fraction of the price and a lot less risk I!!
synopsys' Predictable Success
4/2/2009
3
Simulating Semiconductor Manufacturing
• With TeAD, engineers simulate the process fabrication flow and resulting electrical behavior
RF
00: substrate
TCAD Application Areas
Opto
'LED, LASER 'Image sensor ·Photodetector ·Solar cell
'High-speed device ·Compound semiconductor
Emitter
Process Gate oxide 3nm
Poly gate deposition Gate formation
100 nm gate length Halo implant
BF2, 40 keY, 8e12, 35 deg, quad
SID extension As, 5 keY, 5e14, 0 deg
SID extension anneal 1050 degC, 3 s
De,,« Vth, lon, loft ....... .
synopsys' Predictable Success
synopsys' Predictable Success
4/2/2009
4
and many types of customers
Research/University • Research Labs, Professors,
Students • Process, Device, Interconnect
Military/Government
• Research Labs, Government Agencies
• Device, Process, Interconnect, C&E
10M ~.1'CA[);'R~6:;Te~h:Oev" 'c,', .~;
,./,fl~~{:t~~ri~~,'c<~~;X.:l; ,i
Foundry • TCAD, R&D,Tech; Dev.,
Production • Process; Device,
Interconnect, TFM, C&E
Fabless
• Foundry Interface; Device Modeling, Library Development
• Interconnect, Device, Process c
synopsys' Predktable Success
Sentaurus Product Family
• Flexible Framework Environment • Advanced Visualization
• 20/30 Process Simulation • Calibration Library • Structure Editor Interface
• 20/30 Oevice Simulation • Structure Editor and Mesher • Application Specific Options
• Process Compact Models • Based on Calibrated Flow • Links Process Variation and
Device Performance
Integrated TCAD Flow from Development to Manufacturing
synopsys' Predictable Success
4/2/2009
5
4/2/2009
Benefits of Using TCAD
synopsys' Predictable Success
synopsys' Predictable Success
6
The MOSFET is Getting a Face Lift! Gate insulator ·Si02/HiK • Leakage • Trapping
interface
Gate • Work function Channel • Depletion • Mobility
Raised SID • Material • Activation • Diffusion
SID extension • Activation • Junction (USJ)
STI • Stress
Device Scaling = More Simulation Needed
synopsys' Predictable Success
Strained Silicon
Stress Distribution in a PMOS with SiGe
~ 300 !l C 250 <JJ E 2l 200 c <U
-§ 150 <JJ
g 100 :0 o
::;; 50
• Experiment Set 1 • Experiment Set 2
"" ' 1st order piezo model " .--~ 2nd order piezo model "'. - --4 6-band-kp Monte Carlo ,
OL...L~~-,---"~-'--'--'--'--'-~L-L~L-L."""<t
• Essential for 65nm development and beyond
• Provides key insight into physical effects
-2000 -1500 -1000 -500 Stress (MPa)
Behavior of various models for high stress, Experimental data from L Shifren ot aI, Appl, Phys, Lett., vol, 85, pp, 6188-6190, 2004,
o
synopsys' Predictable Success
4/2/2009
7
Atomistic Effects
Discrete Dopant Distributions
Electron Density in Sen taurus Device
10'
0.2 0.4 0.6 0.8 Gate Voltage (V)
Statisticallds-Vgs
• Physical basis for simulating emerging effects: • Random Doping Fluctuation (RDF)
• Line Edge Roughness (LER)
SON OS Device Structure
Silicon Nitride - __
.7 11m
2D Mesh Generation • 2301 vertices
synopsys' Predictable Success
synopsys' Predictable Success
4/2/2009
8
Image Sensor Pixel
Microlens
N
-2 -I o y
• 3D to 2D cut to see the buried photodiode synopsys' Predictable Success
Omega FinFET
Sentaurus Device simulation using Quantum Transport Model
Omega FinFET with electron current streamlines
Run-time statistics: 13000 nodes Single-carrier quantum transport 95 CPU minutes < 1 GB RAM
Electron concentration at center of the channel
Red: > 1019 cm-3
Blue: < 1018 cm-3
synopsys' Predictable Success
4/2/2009
9
Framework - SWB
• Provides a GUI-based simulation environment
• Organizes simulation projects, runs and results
• Allows large Design of Experiment (DOE) and statistical analysis
• Manages job scheduling & network computing
• Enables interactive visualization and analysis of simulation results
4/2/2009
synopsys' Predictable Success
synopsys' Predictable Success
10
I
reAD Product Architecture
Sentaurus Device Editor Sentarus Workbench
/ Mesh
Process Simulation
•
•
Models wafer fabrication steps • Implantation, diffusion, oxidation &
lithography models are calibrated and highly predictive
• Etching and deposition are typically modeled geometrically
Starts from flow description and layout
Sentaurus Device
E ~ 0.0004
~ 5 ~ 00002
~
/ Drain Voltage {Vi
.......... PCM Studio
t. l .. _. L L t.t synopsys' Predictable Success
TCAD process flow editor
oo.sut6-trille
90nm nFET
synopsys' Predictable Success
4/2/2009
11
I Structure Editor
3D Emulation
• From layout and geometrical photo, etch, & deposition to
generate 3D structure.
20 and 3D iterative editor
Device Simulation
• Models the electrical, optical, mechanical & magnetic behavior of r'~ semiconductor devices • Simulation is typically performed
on structures created by process simulation
• Modes of simulation • Static, time-dependent, large and
small signal frequency dependent and noise modeling
Highly accurate CAD models can be extracted from device simulation results
• Intuitive user interface
• Interactive scripting
record GUI actions
type/paste script command
easy to debug
synopsys' Predictable Success
Simulated current density and flow lines in 100nm device
"./
Simulated electrical characteristics
synopsys' Predictable Success
4/2/2009
12
PCM Studio
PCM acts as a link between the Yield Management System (YMS) and TCAD
PCM from TCAD In-process Metrology and Device Characteristics from Manufacturing
• Graphical & Statistical analysis
• Visualization of experimental data
• Visualization of process-device relations
• Algorithmic analysis Reverse analysis
• Feed-forward analysis • Process Window analysis
.-------
.... i :7·
i)f~···~)f.,+¥)l~ . j 1 j . .I: .'. i J r .I"
synopsys' Predictable Success
rCAD Consulting and Engineering
• Dedicated team of highly proficient engineers with long professional experience
• Clo~e collaboration with the Synopsys software
• • 'Ohlf:/,Loo,r ~ 1E21 ~ :-.... • I$"Y:FU.>OP'
1 :,,:!.. ~ .:;''/.':.~ .. ~ lE20 ~ _$'-,,",5.1041
i lE19' "S:: g ~~..... • • .... engmeers il lE18 • • '_ •• - • ~
Close collaboration with customers in consulting and ~ lE17l....",~!!fJl~i1j~ engineering projects 0 10 O:;lh(n:, 40
• Service project examples • Calibration • Process analysis and optimization • Difficult simulation types, such as 3D, full-chip,
SEU/SER, ESD Customer specific technology templates
• Customer specific training and know-how transfer • Model development and integration • Software integration: TCAD FabLink • Dedicated engineering projects
synopsys' Predictable Success
4/2/2009
13
4/2/2009
Synopsys reAD
synopsys" Predictable Success
synopsys' Predictable Success
14
4/2/2009
WMj,a;h' (a GUI tool to assemble process flow and layout data, n then translate to the input file of SProcess)
UWMi**j==========+------. n
~im[$l!llmij$j <===:> Emittitl n 1L---__ --1
synopsys" Predictable Success
Sentaurus Workbench
15
Node Information
~jl ':;;l'lIr~~Ju}51
P<¥,
~e.1ett
~t~se1ectboTO 15 Qi«1Ect/Jf
f-='----+----'-"""--+~-'-·15"__ --;;;~-~.--~_z~--
\.""""" (,jiO .. r-~-+~~+-~- .. --.. --.-.. -~--.-~-~-.... -~.--..
Noo. 10 Toot 5.",
P~~tr HaIoEr>e/W
V"'"' ~s Slelus:: I-Oae: m42:23Ocl2G2007 HOlt !v.,().HcadJ3
"'. 211 NodoJ;lochd;' fV
r-€'ofreetedVer~t·-·
jlgetL1~·Ol
l>¢ l.3S5e-Ol ~ Yow<- S.5~7t!.{)4
i..!~., .. _~ J:!~.~-~L ....
j l¢f: 1{
1><; ! Ygox: 1{
i To" It _,~_,,,_.,~ __ .,, __ • __ ._.<
J H-*'DoseAlel) abEneI!B,,15
J _:1
synopsys' Predictable Success
Online Manuals and Training Material
S ... _ ... F ...... ,".~"".,.... .... """¥"'I~.nt' •• " .. " .. :"'''..".. ..... ~T-'' .. ""'1 ...... )*""''''' ........ ~~ .• tm .. ~~.,MU"' .... I" .. "H ........ _"
U;;"''''<'III> ~,"'.""IMo~~.~lI TC'Of'~"'u "'~bl\<l ThO l.-.",.n ... ~ ~="""~11O'''''''_r<~~_!C'O?l'", .. ~~, ......... , .. ",a synopsys'
Predictable Success
4/2/2009
16
Basic Operation
• Attach 1 Detach folders
• Copy 1 Delete projects
• Clean up 1 Pre-process 1 Select nodes / Run projects 1 Abort projects
• View Output Results
• Export (tar) 1 Import (tar) projects
synopsys' Predictable Success
synopsys' Predictable Success
4/2/2009
17
Outline
• Sentaurus TCAO coordinate systems
• Script file setup sequence
• 10 example
• 20 example
• Implement external variable on Sentaurus Workbench
synopsys' Predictable Success
Sentaurus TCAD Coordinate Systems (default setting)
·0.2
T'"" I 0: E 0
02-.......... (f)
~ ~ 02
0.4
SProcess
02 0.4
Y-axis (urn)
[1,-1,0] ..... Silicon miller indices
·0.2
T'"" I
~ E 0
o 2-.......... (f)
I .~ 0.2
t >-0.4
Tecplot, SDE, SDevice
o X-axis (urn)
[ 1,-1,0] .....
0.5
synopsys' Predictable Success
4/2/2009
18
4/2/2009
Coordinates in 3D
Simulation CCJxdinates Vicualization Coordina.tes
3D
J!"'\ ~ '\ z y
x
synopsys' Predictable Success
Wafer Coordinate & Slice Angle z,
x" Figure 12 Wafer coordinate system
Y,
I ___ ---r~./_ ~"",.;)n*
~~0~\. Y'~ Z, ". > .. :( , .,/
/
x~
z, Figurt! 14 Default simulilboll coordinate lS}'slem (slice .• lflgla = -00) Figure 13 Slmul41ion coordiOuto system {slk:9.angle '" 45)
synopsys' Predictable Success
19
4/2/2009
Script File Setup Sequence
• Setup initial mesh
• Define initial simulation domain
• Initialize simulation & define substrate condition
• Setup process flow
• Oxidation / Deposition / Etching / Implantation / Annealing
• Rebuild mesh at appropriate steps
• Define electrodes
• Save full structure
• Extract parameters
synopsys' Predictable Success
1D Example
• Copy project "1 D_SProcess" from training_library
• Refer to the command file of example "1 D _ SProcess"
• Check 1 D doping profile by INSPECT
• Output file introduction
synopsys' Predictable Success
20
I , I
I
Reference: SProcess, p34 - Oxide Thickness
• Meauring oxide thickness:
Select z=Boron
layers
{ Top Bottom
{-6.43e-03 4.11 e-03
{ 4.11 e-03 2.00e+OO
Integral
1.54e+09
1.98e+11
Integral Boron Concentration
Material}
Oxide}
Silicon}
• final oxide thickness is 4.11 nm + 6.43 nm = 10.54 nm
Reference: SProcess, p734 I p672 I p741 I p775 I p98 - select I layers I SetPlxList I WritePlx I Datasets • Select
• Selects the plot variable for the postprocessing routines
• Layers • Prints material interfaces and integrated data field values
• SetPlxList
• Sets a list of solution and term names to be passed to WritePlx command
• WritePlx
• Writes a 10 pix file.
synopsys' Predictable Success
4/2/2009
21
4/2/2009
2D Example
• Copy project "20_SProcess" from training_library
• Refer to the command file of "20 SProcess"
synopsys' Predictable Success
2D Example Process Flow
synopsys' Predictable Success
22
I I I
2D Example Mesh Setting
Extract Parameters Ygox (X coordinate of oxide/silicon interface) Ypol (X coordinate of POLY/oxide interface) Tox (gate oxide thickness) = Ygox-Ypol Lgeff (effective channel length) = 2*Xgd Xj (Source/Drain junction depth)
0.1 0.2
Ocp,["t"}COil:.e!lll<lI,yNNelh!Ntf; teln-· -J) ~ .) 4E~20
, ')'OE+ 17
. 27E .. 14
--64E.ll
Ii ::~:::;
0.4
c=J 0.6
synopsys' Predictable Success
4/2/2009
23
Implement External Variables on SWB • copy 2D _ SProcess > clean up > add parameters> modify command
file> clear up & renumber the experiment tree
I Add external parameters on workbench I
synopsys' Predictable Success
Implement External Variables on SWB
• copy 2D _ SProcess > clean up > add parameters> modify command file> clear up & renumber the experiment tree
Link external variables to internal variables
#--- set variable --------------------- #--- set variable ---------------------setlgate 0.18 set Igate @Igate@ set ymax [expr $/gateI2+0.4] set ymax @<lgate/2+0.4>@ set HaloDose 1e13 set HaloDose @HaloDose@ set HaloEnergy 15 set HaloEnergy @HaloEnergy@
synopsys' Predictable Success
4/2/2009
24
2D Example
• Copy project "20_SProcess" from training_library
• Refer to the command file of "20 SProcess"
• Run & check extracted variables
• User exercise: Add the SWB variables & change code accordingly
Reference: SProcess, p453 ; SWB, p160 I p95
• Advanced Calibration
• calibrated to deep-submicron CMOS & SOl technology
synopsys' Predictable Success
• power devices or SiGe devices, may require simpler or additional diffusion models, which are not yet included in the Advanced Calibration
• # - command
• #set <varname> <value> : Sets the value of <varname>
• Extracted variables
• puts "DOE: <varname> <value>"
synopsys' Predictable Success
4/2/2009
25
Tecplot SV Overview
• Tecplot SV is software for scientific visualization.
• Extended by Synopsys to accommodate the special requirements.
4/2/2009
synopsys' Predictable Success
synopsys' PredldableSuccess
26
Specify Equations • Use the Specify Equations dialog to alter data in existing zones_
Data> Alter> Specify Equations __ .
• The dialog allows you to change the values of entire variables or specific data points_
• You can also use the dialog to create new variables_
synopsys' Predictable Success
Generating 1 D Cuts • One-dimensional cuts can be made along either the x or
y coordinate axes.
Slicer >Orthogonal Cut
Normal Direction: .... X
vV ",Z
.J Cut at mouse position
Number of Cuts::
First Cut At
Last Cut At
• Merga Zones in Cut
...., Cut Zone By Zone
~~: <, ~ ~. ,
x {umJ YlumJ
synopsys' PredictableSucces$
4/212009
27
4/2/2009
Exporting 1 D Cuts to Inspect
• Select the frame that includes the cuts to be exported. File> Export> Inspect Graph ...
:t ·:eees "fiE . , ...
;.\-.. -c-.~ . ..::-~ :"''I;.~;~ ":::G:: ,...~ ... ~_ • ~ 'k"~",
---
synopsys' Predictable Success
Ex 1. Plot 1 D Band Structure (1/7)
Project: /PostBasiclquestionltecp/otitecp/oC 1 dband
• Open the IdVg tool's tdr file.
"."<.-;
Iii':,:::
• Select Data> Alter> Specify Equations ...
synopsys' Predictable Success
28
Ex 1. Plot 1 D Band Structure (2/7) Set as follows (The unit is necessary.):
{ Ef } = -1'~{eQuasiFermiPotentia7 [V]}
oafa Set In(o._
Remove -<:>'$
1. Input equations load EquaUons ..
) Save EqualJons ..
I."
Default EquaUon Modifiers
Close
Index Ranges Start End SkJp
~Indexrn-~rnJ-lnd9Xrn-~WK-Indexrn-~W
New Var Oala Type
New Val location
Help
1 Abs(Exlrapolalion_eOe/ ..."l
Abs(Extrapolat/on_hOel ~ AcceptorConceniration ConducUonBandEnergy OonorConcenlratlon [cnt.~, Dop!ngConcentraUon [c
ElectroslallcPotentlai [V l
"------' -
synopsys' Predictable Success
Ex 1. Plot 1 D Band Structure (3/7) Select Ef. Abs{Exirapolatlon_eOel ~
Abs(ExtrapolaUon_hDs/ J AcceplorConcentration ConductionBandEnergy DonorConcentratlon [cn DoplngConcenlration (c
• Slicer >Orthogonal Cut, select X, and set First Cut At 0 in the form.
EleclrostatlcPotential IV ; ,J------.J '
Normal DJrecllon: .. X v y
vZ
...J Col at mouse posllion
Numberore"!s: ~~ FlrslCutAI: ~~ Last Cut At: '0, .).3.i:5 4.
.. Merge Zones In Cut
v Cut Zone By Zone
synopsys' Predictable Success
4/2/2009
29
Ex 1. Plot 1 D Band Structure (4/7)
• Keep pressing control key, and select ConductionBandEnergy and ValenceBandEnergy.
QuaslFermlPolentiai IVI SpaceChar..9.e lcnr-l1 i1
Vertexlndex eCurrentoenslty [A·em' eDensity [Cm"-31 eMoblllly (crrrZ~V"-l'S
Ex 1. Plot 1 D Band Structure (5/7) • 10 band structure.
synopsys' Predictable Success
'1.
Cut at X=Oum
PolySili~?n.r· Silicon
synopsys' Predictable Success
4/2/2009
30
Ex 1. Plot 10 Band Structure (6/7) • Select the slice frame, and press
File>Export>lnspect graph ...
:?~_~ __ ..:,.~' '·'i,,~;~~ .. :::;.l. ~:.~ "'"."' .... "-. 'l~y~'. "_ . ____ . __ . ___ .. _________ ._. -;'~"
~;U"!l '.;"U'l -_ .. ~-_ ..... _ ...... -.-----.. ---~--~-.. -----~-.. ------~---.--------.-- ...... - .. -
Ex 1. Plot 10 Band Structure (7/7) • Y _[urn] : To X-Axis
ConductionBandEnergy: } ValenceBandEnergy: To Left Y-Axis Ef:
------;
.-_.--"--- ". __ ... _,
><--. -;.::- -----;----~-~
4/2/2009
synopsys' Predictable Success
synopsys' Predictable Success
31
Manual Introduction (refer to Tecplot-SV manual)
• Getting started
• Starting Tecplot
• Main T ecplot window
• Loading files
• Synopsys sidebar
• 20/30 Mode
• XY Mode
• Native Tecplot
• Generating cuts
User Exercise
• Load Sprocess_2D example
• Load 3D example
• Perform the x-cut
synopsy~r Predictable Success
For doing 3D cut, go to slicer => orthogonal cut (Y-normal direction), select 3 cuts with default end points
synopsys' Predictable Success
4/2/2009
32
synopsys' Predictable Success
Outline
• Mesh strategy of MOSFET device simulation
• GUI operation on interactive mode
• Script a command file for batch mode
[Screen Res should be set to 1 024x870 to accommodate External Profile Placement Dialog Box]
synopsys' Predictable Success
4/2/2009
33
Flow of Input and Output in SDE
Intput: Device Structure from SProcess
Intput: Mesh Strategy
}
Output: Runtime messages
MOSFET Mesh Setup Strategy (for SDevice Simulation)
• Load boundary from previous SProcess output
• Define initial mesh for Silicon and PolySilicon materials
• Refine Source/Drain junction mesh
• Refine LDD junction mesh
• Refine silicon surface region between channel to
o
SID contact 0.5
• Define gate oxide mesh
• Refine channel mesh
• Refine PolySilicon mesh
• Load doping profile from previous SProcess output
• Define PolyGate (PolySilicon) doping
Output: structure, doping, mesh
synopsys' Predictable Success
o 0.5
synopsys' Predictable Success
4/2/2009
34
MOSFET Mesh Setup Result (for SDevice Simulation)
Batch Mode
E 2->-
• Refer to command file "sde_dvs.cmd" of example 0.18um nMOS
• Check output files
4/2/2009
synopsys' PredictableSuccess
35
Interactive Mode • Start Structure Editor => type "sde" • Journal on => record the command line of each step • Import boundary file from n4_bnd.tdr • Load sub mesh (geometry and doping data) from n4_fps.tdr • turn off "auto region name", turn on "exact coordinates" • Step by step setup mesh by GUI
Silicon => (0.1, 0.1) / (0.05, 0.1) Poly => (0.02, 0.05) / (0.01, 0.025) SO' => (0.09, 0.0) / (0.49, 0.3) => (0.1, 0.03) / (0.006, 0.006) LOO => (0.05, 0.0) / (0.09, 0.05) => (0.006, 0.006) / (0.005, 0.005)
• CtoC => (0.09, -0.002) / (0.49, 0.006) => (99, 0.002) / (66, 0.001) Gox => (0.0, -0.002681) / (0.09, 0.00065) => (99, 4e-4) / (66, 4e-4) Channel => (0.0, 0.00065) / (0.09, 0.075) => (0.02, 0.05) / (0.01, 2e-4) / (-1.45, 1.45)
• Gate => (0.0, -0.18) / (0.09, -0.002681) => (99, 0.04) / (66, 4e-4) / (0.0, -1.75)
• Define PolyGate doping type and concentration (Arsenic 6e19)
• Save • Build mesh • Journal off • Check .tdr .jrl
Reference: MeshGen, p72; SDataEx, p11-15
• snmesh <options> project_name
synopsys' Predictable Success
• SMesh automatically adds .bnd and .cmd to the base name project_name to obtain input file filenames. SMesh creates the output file project_name_msh.tdr that contains mesh geometry information and doping information.
• In the case of TOR files as input file, special naming rules apply.
• tdx -mtt -x -ren drain=source n@node@_haICmsh n@node@_msh
• -mtt: Mirrors TOR geometry and saves the result to another TOR file
• -x: Mirror at xmin
• -ren: Rename a region or regions
synopsys" Predictable Success
4/2/2009
36
The Final Mesh for SDevice
o
0.2
E 2->- 004
0.6
0.8
User Exercise
o 0.5 x [urn]
DQfilngCl)ncer.ltallOl1lC:!TI~·31
• 34E.20 ~"., 3 OE ... 17
2.7E+14
·e.ltE.ll
.-1.2Ed5
-14E't-18
synopsys' Predictable Success
• Import command file & go through batch mode
• Do the refinement manually as stated in the interactive mode.
• Build the mesh & check result
synopsys' Predictable Success
4/2/2009
37
The Final Mesh for SDevice
0
0.2
E 2-
0.4 >-
0.6
0.8
o 0.5 X [um)
User Exercise
DopmgConcenlra!lcm !cm-'-31 III 34E.20 ',,.-. ;"JOE+- 17
",: 2.7E+ t4
c: -S 4E+ 11
•• 1.2E.1S
-14E ... 18
synopsys' Predictable Success
• Import command file & go through batch mode
• Do the refinement manually as stated in the interactive mode.
• Build the mesh & check result
synopsys' PredictableSucccss
4/2/2009
37
4/2/2009
synopsys' Predictable Success
Outline
• Flow of input and output in SDevice
• Command file introduction
• Parameter file introduction
• O.18um nMOS Id_Vg example
synopsys' Predictable Success
38
Flow of Input and Output in SDevice
Input
Device Structure
Command File
File
Input
Models, Parameter, SWeeps
Output:
Runtime messages
"define the input and output files of the simulation"
Electrode {
Output:
IVs. Field distributions
"define electrical (or thermal) contacts, initial bias condition, special
synopsys' Predictable Success
}
boundary condition" }
Physics {
"declare physical models" }
Plot {
"specify the solution variables that are to be saved in the Plot file" }
Math {
"options of numeric solver"
Solve {
" set bias sweeps sequence and solve transport models"
synopsys' Predictable Success
4/2/2009
39
Parameter File • Refer to SDevice manual 2007.12 P .56 • Check default parameter file by materials • When parameter file is empty, use default parameters
Reference: SDevice, p56
• The parameter file contains user-defined values for model parameters (coefficients).
• The parameters in this file replace the values contained in a default parameter file models. par.
• Model coefficients can be specified separately for each region or material in the device structure
synopsys' PredictableSucce5s
4/2/2009
40
E 2->-
0.2
• Refer to 0.18um_nMOS example
Vg=O-1.5v
80-006 ,----------,-8&-005
/ .02 o 02 0.6
x [urn] Vg{vonj
Vb=Ov
User Exercise
• Use 2D_Sprocess example, do:
• Add Structure Editor, add "PolyDop" parameter, import command file
• Add Sdevice, add "Vdd", "Vds", import command file, and specify import parameter
6&-006
20-006
synopsys· Predictable Success
• Run (Result checking will be demo'ed in the next section)
synopsys' Predictable Success
4/2/2009
41
synopsys' Predictable Success
Outline
• GUI interactive mode • Load curve file, plot curves
• Edit Plot area, Axes
• Create new curve
• Formula library - refer to manual 2007.12 P .25,48
• Macros - refer to manual 2007.12 P .26,50
• Save, Export
• Script file batch mode • Record each operation step on interactive mode to generate
a script file.
• Script a command file - refer to example 0.18um nMOS
• Extract standard parameters of the extraction library
synopsys" Predictable Success
4/2/2009
42
Reference (Inspect, p48 I p50) Function Table:
MACRO Example:
The macro ADO is defined as:
<c 1>+ <c 2>
Relum:. II"" tn~~ .... b~~t>o'lk..-..:.sul~ 0Jr. .... Vallk':-- mtl'J ~
~.,..~k)J"Ul.1.tl('ro;:qu:al11)1.
Retulm tho! Ill>:" 1~. ~ retumL-J an~ {odi:ml ~ ~" ..... -n in tl:v!r.m.,..:--lt ... : If.\:'t. Z
Rottum,;. tn.!::lI.'I:' t:.ll~,~t. Ttl ... rewm..."Il.:1llgk·Ir.:Jd1a:tl is 21 ...... 0 In tho:-'.I1lt<!'-1I: '1 l'}~_ 1.
R ... tun!$ the tuv.."f~ hyf'<:rt'C"i,: 1ml£",cL CtIf\.\· \,:du...", lnu.-.l tlc~n-a_l :.nt11(<,::c-lu.l~_1 aud I •.
R(.u,""tTf' .. ":k.·h"!"'~11 m~'m:illcstinte'2>!rQl'llo.~ tb::lll jt1o~t(.
This macro adds two curves. The macro prototype looks like:
AOO«CURVE>, <CURVE»
synopsys' Predictable Success
User Exercise
• Open Inspect, plot IdNg in log scale, and obtain gm by getting max(diff(curve))
• Create an inspect script by GUI: record, load pit, plot, save, modify code.
synopsys' Predictable Success
4/2/2009
43
Agenda
Inspect Script Basic
Version A-200B.09 RevO.O
• Basic Operations and Script Commands
~ Load pit File: proUoad
~ Create Curve: cv createDS
~ Set Attributes: gr_setAxisAttr; cv_setCurveAttr
~ Extract Variables: cv_compute; ft_scalar
• Mathematical Formulas and Macros ~ Mathematical Formulas
~ Macros
• Threshold Voltage Extraction
~ Definitions of Threshold Voltage
~ Inspect Script
4/2/2009
synopsys'" Predictable Success
synopsys-Predictable Success
44
Inspect Script
• Inspect can be controlled by using a simple scrip language. For example, a script can load a project (data file), draw curves, and perform mathematical computations on curves.
• A script can be written manually or created automatically by recording actions performed interactively through the graphical user interface.
• Inspect script can extract variables to SWB family table. Variable Values - .......... __ .... _ .. _ .... . FamUyTree
··i-~-···:llin~~iJ I .
... . ~~!""Ei:.ii .. .. !.p..~~~~~. __ ~ __ --' .----~~----; --.~~g -. --!.- .. ~?.~!~.!!".-..... ,-,-====..,.,..-==--..
-----'r; -'l"'~~~""~ift'--'.---:-; __ --1i-, -_-~;f--;;O~.~~7S- O.~6 O~~3 (~:~~~:~:=:~-=-~~==~·::-==~:~=-.... -l=~~~:=~; 0 075 "'ri~340' ...... - "0.2'-5-- .. . . 0.01 , 1 0.OB5 If 327' -- . . o.2olf . . -.... ·o:oiis-··-'·-·-·-·::.-····-·-·:·---·-=-···--l~·-::::·--~~ 0 100 ...... ·····0·'3,·5·· '0' ;"99" .. . '-'-"a~03z's-""-7-' -··-··='-·---·T·--."-·':::-·-~·~i--····::'-···"·...... oj'io .... 0298 . -. --0 ,'6e'-~'-O:092S--~ . . 0.250' 0257 0.158
synopsys' Predictable Success
Basic Operations and Script Commands
synopsys" Predictable Success
4/2/2009
45
•
•
Basic Operations and Script Commands
The basic operations and script commands are explained: ~ Load pIt File: proUoad
~ Create Curves: cv_createDS
~ Set Attributes: gr _ setAxisAttr; cv _ setCurveAttr
~ Extract Variables: cv_compute; ft_scalar
A backslash '\' is used to extend a command to multiple
lines if it appears as the last character on the line.
Load pit File - Operation - (1/3)
Is-i?fflj!tiHbfflfttfi,.rlAli vi 4.Mm[~ij Eile; gdit £Urve ~crlpt ~enslons tielp ==:::.· ____ .· ________________ .·.· ____ .·.·.=J;I~r§ :;;;;;;;;;:.;;-.--,.-;r:-1< -":;~.~--==:==~ __ Automatically Update Datasets._ r"---"""i 1 -,-----------
lletete Oatasets 1. CliCk" oad Dataset ... " ................................... __ ...... _ ......... __ ........ ___ .1 .
i l..O<¥, Setup... ! ~ve Setup_.. 1 .-.-.-.. -...... -.-..................... -. ···-···-··1 Restore AIL .
sate AIL i --··-----····-·····-·---·-····1 , £>l>ort rj --............. - .. ----.. _ ...... ·····1
WrtleEPS_ 'I' WritePS_
Print._ ctrf+p t
·~~~~~~~~-.. =--~-~=~==I ~ CtrI+Qj
0.8
0.6
0.4
synopsys' Predictable Success
synopsys' Predictable Success
4/2/2009
46
Load pit File - Operation - (2/3)
ft4$ltMM§ 6 imM~*;£~~~,:L;~ .. :,<,.~~~-:r' >.2!lJ
::~~l>,:remoteJ!caJ:l/SalOShjYJSTl)BfTraJnlnglnmOS-'OIlO1f ~ I ihJ i 1
IiJ n14_des.plt [E nlS_des_pTt f IE n16_des.plt I ~ n17_des.plt f
III n18_des.plt I' ~ nlS_des,ptt ., C, .1,.4- 4';
2. Set "Files of type" 4. Click "Open"
synopsys' Predictable Success
Load pit File - Operation - (3/3)
c ........ .,.
;::::~::v. .---
····i··· 5. DC\t~set name
___ ::.::::: __ J ... ___ ~_._.; _2::~.:=:~j
synopsys' Pre<iictableSuccess
4/2/2009
47
Load pit File - Command -
• Load pit file
proj_7oad n2 des.p7L n2 des 3. 5.
~ n2_des.plt : the name of the file to load.
~ n2_des : the arbitrary name user can define for this dataset.
Create Curve - Operation - (1/4)
:;<>; ~t.;:;'~
f~'~ g' :i--' -,::.. --c-"-,,-c.-c_ ;"'''-c"..,.'<!'<···
f,:~:::·; -1 ;fCfiCK "Qatasets" -1
synopsys' Predictable Success
synopsys' Predictable Success
4/2/2009
48
4/2/2009
Create Curve - Operation - (2/4)
"contact"
"OuterVoltage"
t·;~-.;:.;;j' _4..G.!i.ck 'To X-Axis"
synopsys' Predictable Success
Create Curve - Operation - (3/4) WIT?
5. Selec "contact"
, ,-
"TotaICurrent"
synopsyS' Predictable Success
49
Create Curve - Operation - (4/4)
~i""'-"""'" "'i 8. Curv,e Name
~J ,
synopsys' Predictable Success
Create Curve - Command -
cv_createDS Tota7Current Drain \ \ 8.
{n2 des gate OuterVo7tage} \ \ 1. 2. 4.
{n2 des drain Tota7Currentl y 1. 5. 6. 7.
• TotalCurrent_Drain : a unique name for the new curve.
• {n2_des gate OuterVoltage} : a list of data to use for the x-dataset
• {n2_des drain TotalCurrent} : a list of data to use for the y-dataset
• y : optional parameter specifying the axis to use; the default is y; the options are y or y2.
synopsys' Predictable Success
4/2/2009
50
Set Attributes
• This section describes the functions that change the attributes of the axes, curves, and legend.
synopsys" Predictable Success
Set the Axis Attributes - Operation: Start -
1 ' 1. Double-click the axis
j+::::::::::::::~::~~~::::::::;:::.:===.~:::==::::::::i:==~:::::i~ M',"y,_ I "='=::':':':::'<~~-::;;;jr;.;;,;;~i.;~;:'~~""~':';;''';''~'''~''''''''~''~-:;;; ~J:
.. ....:.::-:".::...J _=. ___ ; .. ~~:'2~:~.J _~~ __ l
synopsys' Predictable Success
4/2/2009
51
4/2/2009
Set the Axis Attributes - Operation: Editing Title (1/2) CUN8t-·---·
68'-05
Color.
• 3. Change ,j Font..
2a-05
synopsys' PredictabJeSuccess
Set the Axis Attributes - Operation: Editing Title (2/2)
Be-OS
P:attems. -Scale l1IJe -TIcks: 6e-OS
TlUe:~vgM
Color:
49-05
5. Change "Fon 2a-05
----------- LI ___ ="'sa:::ffi,-p_le_te_xt ____ -'
__ I·~·~~-~:~_~_~~I_i~~_~'O _ "
synopsys' Predictable Success
52
Set the Axis Attributes - Operation: Editing Scale-
Be-OS
L; ;,
Set the Axis Attributes - Operation: Editing Pattern (1/2)
8a-OS
10. Click "Patterns" tab iN.. t &lliirtir.;;~~~:~':'; "\'!-:.~
X-Ms ·!leIl.V-Ms 1 Right Y-AxIs
6e-OS C~~~~~~ Scale 11tIe' nets ~
4e-OS
2e-OS
.. OJspta!lX-Ax!s
...) Display VarlIcaJ Una AI x-o
11. Clic~ Color" )
0.5
4/2/2009
synopsys' Predictable Success
synopsys' Predictable$uccess
53
4/2/2009
Set the Axis Attributes -- Operation: Editing Pattern (2/2) --
ae-os
12. Click "Patterns" tab
:c.:~~L~~ Y-AXI$ R~nl Y-AxI& .
tie-OS : PallBms :Scale Title ,Tlcb '.~ ... -.--:
...,; Ol$play Vefl!calline At X"O .-....................... _ ..... .
~~~~~~=~==j~~~~=~=} 4e-OS
COlOr: II
synopsys' Predictable Success
Set the Axis Attributes - Command -
gr_setAxisAttr 2{ {Vg [V77- {aria7 15]- a 8 b7ack 1 \ \ 1. 3. 5. 8. 11. 13.
{aria7 is} a 5 a b7ack
• X: a keyword (X, Y, or Y2) specifying an axis.
• Vg M : the axis title .
• {arial 15} : the font size of the axis title.
• 0 8 : minimal and maximal values of the axis.
• black: the color of the axis.
• 1 : the width of the axis line.
synopsys' Predictable Success
54
4/2/2009
Set the Axis Attributes - Operation· Editing Ticks (1/2)
Sa-OS Subdivislan'
Type
4(>-05
Ze-OS
16.
05 17. Clic " K"
synopsys" Predictable Success
Set the Axis Attributes - Operation: Editing Ticks (2/2)
hi! L w:Rl2ix:>:;": 2<l X-AId, : LmlV-AlGs. :Rlgllty-Axis ,
18. Change TiGk b.abehAngle"
Typ. J4;9:-Change
I'
FollL ;
synopsys' Predictable Success
55
4/2/2009
Set the Axis Attributes -- Operation: Changing Log/Lin --
Ss-os we. £ ill~~Xs:~,:-·~.>' 2SJ X-Axi' :lI.J1'lY-MS i.RlghtV-AAi,:
20. Click "Scale" abn'~~-;;'~;~~Tm.n,,,, Min.: r---
6,-05 r:;'~=~~~:'~~~;::;:I~i~J 21. Cha~
4e-05
-------.. ---.... -.-----
Za-OS
synopsys' Predictable Success
Set the Axis Attributes -- Operation: Editing Font of Title --
iN "_ Mt,<B£gfdIS::2L.,.~- ',i!.! X-AxIS; len V-AxIs: Righi. V-M~
P"'m, is~"F;;:hr022. Click
------." ------- ---.... --_ .. _--_ .. ~ ....... ~ .... .
Ze-as
synopsys" Predictable Success
56
Set the Axis Attributes - Command -
gr_setAxisAttr K {Vg [V]} {aria7 1S} 0 8 b7ack 1 \ \
{aria7 1St Q i Q b7ack 16. 18. 19.20. 23.
• X : a keyword (X, Y, or Y2) specifying an axis
• {arial 15} :the font size of the tick label
• 0 : the angle at which the tick labels are drawn
• 5: the number of secondary ticks between the main ticks
• black: the color of the axis title
synopsys" Predictable Success
Set Curve Drawing Attributes - Operation: Start -
1Ii:1$!===:::=I!II ______ nl!i!i!!W~m1ii!l_1ii!l,-Il1E~,'{o0fif1ff%t':$XW:.::;;~0C;','-::--0
~,. ~;;...>--'
c,J;.Sv·-·:;,..· ..
synopsys' Predictable Success
4/2/2009
57
4/2/2009
Set Curve Drawing Attributes ..... Operation: Editing General Part .....
2. Click "General" tab !&.::tJJ iMtUiis{;~:,=~;;:;-~ ~ : '~<!rJJ:' ~&- M." .... ".~ ~li;~~"'f .~ .. ~ ...... :
synopsys' Predictable Success
Set Curve Drawing Attributes ..... Operation: Editing Line Part (1/2)-
4. Click "Line" tab i2! .... t!!:.i!::!¥Zl},,::!,i1 __ Il!!,mmMH®f%~m!lfL;;d:/
Gene~:,:~~:: .. rastsr . Imerpnl~on COIOr. .... a ....... -. ••• _. __ ...... ..
: l1li00l1lil1li:
'-1 ~:=~~~ n w,,,,,j 1'00000 l :1
~" } 5. ChangelW'Color" ............................ ~§
o~s
synopsys' Predictable Success
58
Set Curve Drawing Attributes -Operation: Editing Line Part (2/2)-
synopsys' Predictable Success
Set Curve Drawing Attributes - Operation: Editing Marker (1/4) -
8. Click "Marker" tab WMti I.!f. ·~uu_u. M@f@EJgxl!l~;,:¥;;Z:·::.< 0 ~_ 29;
~oor.ll LJneL~::::EtnwrpOIatlOf1 ~l
[~:::::=&£:::::::::::!:1 9. chaJbe "Shape" ;Sll8. :s:: : 1~ ................... ," ... 10. Change "~,ze" 0uU~ CMorc II U OV1llneWIOlIl:~ 1~! FII!Q)lot: •
-"-~ .. _ .. ~--.... -.. -.-- ---- ,--_. ... . ------_ .. - .. _-_.- ~~j .. -.... jl
synopsys-Predictable Success
4/2/2009
59
Set Curve Drawing Attributes - Operation: Editing Marker (2/4) --
o's Ouh'fl,lQlI3ge M
synopsys' Predictable Success
Set Curve Drawing Attributes - Operation: Editing Marker (3/4)-
m· t i. . ~::t..::::_~:-
GIIf>II.al.l.tni! Matkin lln!orpolalklfl ~I ,....._._ ....... _._-_ .. _--,
Shap~ i~re
Ij il
12. Chang~ "Outline Width"
__ J! -"'-"-'--'--~"~~~X'~~;~~~~~~J-'----'-"!
synopsys' Predictable Success
4/2/2009
60
Set Curve Drawing Attributes - Operation : Editing Marker (4/4) -
~i?¥iCitll:i":::l.I:m. __ . ~~"l1lZ:,;;:;:' .·.!91 Ciener~ :lIrIa MarIoor InterpOlaIlOn: !
I _.
j'JqllilN
! OutllnilC010f"_. I o"''",.w'''"r~ 13. Change "Fill Color"
...................... c...... .1
( FlUcoloe,. •• : 'I : DooD.d ,j ... ·····~~:=~~~g=~~:=-·························I
.88888~1Jj~J . .1 \ ............. _ ... __ ... _--_ .. ---
14. Click "OK"
Set Curve Drawing Attributes - Command-
synopsys" Predictable Success
cv_setCurveAttr Tota7Current Drain IdVg b7ack so7id 1 \ \ 3 5 6 7 square 5. b7ack 1 b7ack
9 10 11 12 13
• Tota7Curren'LDrain": the curve name.
IdVg: the curve legend.
b7ack: the color of the curve line.
so 7 i d : the drawing style of the curve line.
3 : the width of the curve line.
square: a keyword for the marker shape.
• 5: the marker size.
b 7 ack : the color of the marker outline.
• 1: the width of the marker outline.
• b 7 ack : the fill-in color of the marker.
synopsys' Predictable Success
4/2/2009
61
Compute a Scalar Using the Formula
• The formula library allows some basic calculations to be performed on one or more selected curves.
cv_compute "formula" xmin xmax ymin ymax
~ formula: the string with the formula to evaluate.
~ xmin, xmax, ymin, ymax : the range for which the formula is applied.
synopsys' Predictable5uccess
Extract Variables • The Inspect command ft_sca 1 ar prints the extracted
value and passes it to Sentaurus Workbench.
• Examples: set maxid [cv_compute "vecmax( <Id»" 0 0.5 0 1.0] fLsca 7 ar i dJT}ax $maxi d
set vt [cv_compute "vecva7x( <Id> , 1e-S)" 0 1.0 0 1.0] ft_sca7ar Vt $vt
synopsys' Predictable Success
4/2/2009
62
Extraction Library
• The commands provided by this library are used to extract various parameters from I-V curves. The library is loaded with the command:
17oad_7ibrary EXTRACT I
• Refer to Inspect manual for more information.
synopsys' Predictable Success
RF Extraction Library
• The commands provided in this library are used to extract RF parameters from small-signal data. The library is loaded with the command:
I 1oad_1ibrary RFXI
• Refer to Inspect manual for more information.
synopsys' Predlctable$uccess
4/2/2009
63
Recording Script • A script can be created automatically by recording actions
performed interactively through the graphical user interface.
• To create a script:
}- A Script Name dialog box is displayed, which prompts you to select or create a script file.
Script> Record> Start
}- After selecting the file name, Inspect starts to store every operation until recording is stopped. £'''' "",,~'" ~'"
S . t R d St n;; ..... RunScnpt Ctr/ .. R 'q. ~ ~ II? cnp > ecor > op-~~~ A:~~ ___ ' start. __ [
Add Pau,e ~ j --:-;--.,-___ Add Breat 1
stop ...J
~ synopsys' Predictable Success
Inspect Execution Mode • Inspect has two execution modes: interactive and batch mode. You
can change mode bY:':-:'S'J,~tExe~:':n':::: ."~
Right button>Edit Input>Preferences ...
'"n' .......
,~~
4/2/2009
64
Mathematical Formulas and
synopsys~ Predictable Success
Mathematical Formulas (1/2) • Click the New button below the Curves area in the Inspect main
window .
• The Create Curve dialog box is displayed. The right pane lists available
Cur/e1 t~3me; jWiY-,_,---ro.e~~J!1I~",~~I!!..::·-; 5 .. ::' F"O/lft'.cr""V\.'"l~iP{"'ToWCton:~~in"):> j MO!:p Cllf'.l1I 'To .. t.sfl Y...to'4 v F1fgr.t V-A>d:
<&0'$. :oe1nh, li:$Ilr,-atL1t; .. e.n. 'Stann, ~ c:",II .. coe, ctt'n. f:rt. erlt:,e><p~rbl)-$.~Ot.~<l.jI}.ll.~t\)j:.1og:10.;>IW1.!'Itt. W\1'<,~~Wt, I;ntl.JI}.yl~'!Im',:r.:!~f
... 't~wC"ltIir.., l,:':C';'JI;k. "-&e"'$:;,t"lI~twe:::<ero
,:ur-,tE>n~'l\j}: ll'I1t1e form>JIa~c.t tlJlTOU!ltleti tJ{'''~lll'ld ~ •• ltyol.l1lJll mm; mwo}, CURVftros1: be teplar-I!(t iIo'l!l ~e,r;:U!V!)"!'lam$' ~.'-J :'Ittro t~tobrv~
synopsys' Predictable Success
4/2/2009
65
Mathematical Formulas (2/2) vecmax (curve)
>- Maximum y-value.
• vecmin (curve)
>- Minimum y-value.
• vecvalx (curve, scalar)
>- x-value at a given y
• vecvaly (curve, scalar)
>- y-value at a given x
vecmax
veczero (curve)
>- x-value at y = o. diff (curve)
____ -+~~ve~c~z~e~r~o----~x
>- Retums the first derivative of the curve.
integr (curve)
>- Retums the integral of the curve.
tangent (curve)
>- Retums the tangent
Macros (1/3)
vecmin
synopsys' Predictable Success
• Macros are predefined commands that can be later recalled. For example, in Inspect, there is a predefined macro, VT, which performs the threshold voltage extraction.
Macros
~u.acortl.;uIn..:.sjrtl.alln.lIIul!,cttla!ll.eM.ant1.e!I. vfI;, Dl'. WIS.~wr.o ......... P.!l.",""",,~Ic>c.I3q1I). ~ ...... <In. .w..'QII.:ar.nm.y(J.~l.(I.r.lnI1<r
"cm»l.. ..... ""'.'et¥~""cvl;lvlm(eot.~I!CZl<O
c ..... '!l3IIeilr!t&IOlllll.la1ll\l<lbt~rro_""ru· ... anll~~·.t\lOUa/lI :,~:-~.ctR\'Em"<lD("p"O'Id"'lhlh~.UlWln'''''''.I\I'''''
synopsys' Predictable Success
4/2/2009
66
Macros (2/3) • Macro usage: ~:'~~'"YdC!i£;;:z:::;:;s:J~~g-:f~~_~ __ !l'1L*§t)fi@i,;·
C>. ~_ ;;<,,-__ ._ ~,-: !,.;<-,~, =.,
Id "5. Vgs (Lg-O.oss urn. Vds..o.OS V)
""'5 .
2e{)5 •
0.5
Macros (3/3)
3. Select curve¢_'o",_o ---------..... 1aDI.fbrmulleCllrHno'''"'
lCOI.oeoofl,asln._.'II""._.Cl>/tcOji.co<,CO<ll.err. :HIe._.flot>l.noo •• gam ..... JO.lt.Ig ...... a.,loq.IIIqIO.j>O'>< •• ln • .... h •• ~tI._._.yo.y.""'.m.9'
4. Click "OK"
synopsys' Predictable Success
• Macro definition can be edited by
Edit>Define Macros ...
MacroUst
1. S~ect "VT" fRnU1
jRon :IOSS 'iest1 'testtZ
Add fEd"
Delete
Name:
Macro: ivecvaIX(tangent(<:c l>.veczaro(ditr(<C 1» - vecmax(dttf«C';'
~-----2'~croaefinIT~lo~nW------available (Qrm(..!la commands to create macros are:
acos, acosh, asin .... asinh. atan, atanh# cbrt, ceil, cos, cosh. ert erfc. 6Xp. fabs .. lloor. gamma, jO, j1 ... Igarnma. 109 .. log10. pow, sin. sinh. sqrt. tan. tanh, yO, 1'1. dllC lntegr
vecmax, vecmln. vecvalX. vecyaly, tangent, veczera
Use "<c n>· as place holders for curves: and -<5 n> ~ for scalar values In the macros, where n represerrts: the argument used in the macro (n must start with 1) .
.close
synopsys' Predictable Success
4/2/2009
67
Threshold Voltage Extraction
synopsys" Predictable Success
Definitions of Threshold Voltage (1/2)
I d Maximum slope of the curve
VT
t Definition 1
Definition 2
• Id
Vg
--~~------~ Vg VT1
synoPSYS' Predictable Success
4/2/2009
68
Definitions of Threshold Voltage (2/2) • Macros
VT: I vecva7x(tangent«c1>, veczero(diff«cl> - vecmax(diff«c1»))) , 0.0)
VT1: I vecva 7x( <cl>, 1.0e-7)
Script functions VT:
I f_VT curveName xmin xmax ymin ymax
VT1: I f_VT1 curveName xmin xmax ymin ymax I
Inspect Script (1/4)
set N @node@ set Vd 0.05 set Lgshift @Lgshift@ set Lg [expr 2. O"SLgshift+O. 065] fLscalar Lg [format %O.3f SLg]
proj_load @plot@ PLT(SN) cv_createDS IdVg(SN) \
>-xmin, xmax, ymin, ymax, the range for computing the result; default values correspond to the full curve range.
synopsys' Predictable Success
"PLT(SN) gaLe OuterVoltage" "PLT(SN) drain TotalCurrent" y cv_setCurveAttr IdVg(SN) "Id" red solid 2 circle 0 defcolor 1 defcolor gr_setAxisAUr X {Gate Voltage (V)} 12 {} {} black 1 10 0 5 0 gr_setAxisAttr Y {Drain Current (A/urn)} 12 {} {} black 1 10 0 5 0 gr_setTitleAtLr "Id vs. Vgs (Lg=SLg urn, Vds=SVd V)" 14 center
#- Extraction #- Calculate the threshold voltage [V] set vt [f_VT IdVg(SN)] fLscalar vt [format %O.3f Svt] set vLl [CVT1 IdVg(SN)] fLscalar vt1 [format %O.3f SvLl]
synopsys' Predictable Success
4/2/2009
69
Inspect Script (2/4)
Set variables:
set set set set
N Vd Lgshift Lg
@node@ 0.05 @Lgshift@ [expr 2.0*$Lgshift+0.065]
Inspect Script (3/4) Load plot file: I proj_load @plot@ PLT($N)
Create curve: cv_createDS IdVg($N) \
H Lgshift
"PLT($N) gate OuterVoltage" "PLT($N) drain TotalCurrent" y
Set curve attribution:
Lg
H Lgshift
synopsys' Predictable Success
cv_setCurveAttr IdVg($N) "Id" red solid 2 circle 0 defcolor 1 defcolor
Set axis attributions: gr_setAxisAtLr X {Gate Voltage (V)} 12 {} {} black 1 10 050 gr_setAxisAttr Y {Drain Current (A/um)} 12 {} {} black 1 10 0 5 0
Set title: I gr_setTitleAtLr "Id vs. Vgs (Lg=$Lg um, Vds=$Vd V)" 14 center
synopsys' Predictable Success
4/2/2009
70
Inspect Script (4/4)
Calculate VT:
Iset vt [f_VT IdVg($N)] I Export the variable to the Family
Table of Sentaurus Workbench:
Calculate VT1 :
Iset vtl [LVTl IdVg($N)) I fcsca7ar ... fcsca7ar fcsca7ar
Lg [format %0.3f $Lg]
vt [format %0.3f $vt] vtl [format %0.3f $vtl]
synopsys' Predictable Success
Ex 1. Threshold Voltage Calculation
Project: IPostBasiclquestionlinspectinmos_rol/off_inspect
• Using macros: >Select batch mode
Edit Input>Preferences ...
• Using inspect script: >Select interactive mode
Edit Input>Preferences ... >Run.
synopsys' Predictable Success
4/2/2009
71
synopsys' Predictable Success
Sentaurus Structure Editor
~~~~~~
Generating 20 Boundaries With Online Training Material
synopsys~ Predictable Success
4/2/2009
72
4/2/2009
20 Exercise
synopsys' Predictable Success
Steps
• Draw> Exact Coordinates
• Draw> Overlap Behavior> New Replaces Old
synopsys' Predictable Success
73
Regions
Region Material Coordinates
Substrate Silicon (-0.5,0), (0.5, 1.0)
Gate
oxide Si02 (-0.2 -40e-4), (0.2 0.0)
Nitride (-0.2 -0.2), (0.2 -40e-4) Si3N4
spacer
Poly gate PolySi (-0.1-0.2), (0.1-40e-4)
Buried
oxide Si02 (-0.5 0.1), (0.5 0.2)
Edit> Separate Lumps.
Rounding Edges
.... Ix
>'. r:':;-' ;--'.;..:.... -'-' :.....;-:...;......;. •• >-'--, : . ...:....;.....~ . ) c~~.· j~~~t~~3 ... ,J:-~::.:- ~~~ , . r "l
',\/Woe; '-r:c:lo·~::'-.. -.. ~-'--~-"'--.-c ~-' .. r~'· :~e>~:_< 1 J
~"':~ ....•. :r::-:-. -~---'--'" .. -"'.:.-. -.·l: .. ~.Jl
llJrtU-<4 D IAPerture selectl .•
• Edit> Edit 2D > Fillet
4/2/2009
synopsys' Predictable Success
synopsys' Predictable Success
74
Declare Contacts
"""" "",
3IJ1;tt.!t411)"
S·
"" I I "'""
jW)(lOOO
I 0- I il \ .J
• (sdegeo:define-contact-set "source" 4.0 (color:rgb 1.0 0.0 0.0 ) "##")
• (sdegeo:define-contact-set "drain" 4.0 (color:rgb 0.0 1.00.0) "##")
• (sdegeo:define-contact-set "gate" 4.0 (color:rgb 0.00.0 1.0) "##")
• (sdegeo:define-contact-set "substrate" 4.0 (color:rgb 1.0 1.00.0) "##")
• (sdegeo:define-contact-set "bodytie" 4.0 (color:rgb 1.0 0.0 1.0 ) "##")
synopsys' Predictable Success
Set Contact (1)
• Contacts> Set Edge(s)
• (sdegeo:define-2d-contact (find-edge-id (position -OA 0.0 0.0)) "source")
• (sdegeo:define-2d-contact (find-edge-id (position OA 0.0 0.0)) "drain")
• (sdegeo:define-2d-contact (find-edge-id (position 0.0 1.0 0.0)) "substrate")
synopsyS' Predictable Success
4/2/2009
75
Add Vertices
• (sdegeo:insert-vertex (position -0.10 0.1 0.0))
• (sdegeo:insert-vertex (position -0.05 0.1 0.0))
• (sdegeo:define-2d-contact (find-edge-id (position -0.07 0.1 0.0)) nbodytien)
Define Region as Contact
• Select Body
• Contacts> Set Region Boundary Edges
• Edit> Remove> Region
• (sdegeo:set-current-contact-set "gate")
synopsys' Predictable Success
• (sdegeo:set-contact-boundary-edges (find-body-id (position 0.0 -0.1 0.0)))
• (sdegeo:delete-region (find-body-id (position 0.0 -0.1 0.0)))
synopsys' Predictable Success
4/2/2009
76
Renaming Regions
• Select Body
• Edit> Change Region Name • (sde:add-material (find-body-id (position 0.0 0.8 0.0» "Silicon" "RSubstrate")
• (sde:add-material (find-body-id (position 0.0 0.15 0.0» "Si02" "RBox")
• (sde:add-material (find-body-id (position 0.0 0.05 0.0» "Silicon" "RSiliconepi")
• (sde:add-material (find-body-id (position 0.0 -20e-4 0.0» "Si02" "RGateox")
• (sde:add-material (find-body-id (position -0.15 -0.1 0.0» "Si3N4" "RSpacerleft")
• (sde:add-material (find-body-id (position 0.15 -0.1 0.0» "Si3N4" "RSpacerright")
• (sde:showattribs "all")
Saving the Model
• File> Save Model
• (sde:save-model "soifet_bndn)
• model geometry - native ACIS format file soifet.sat
• Ref/Eval windows and parameters - soifet.scm
• DF-ISE format refinement and doping - soifet.cmd
• DF-ISE format boundary - soifet.bnd
• To use the TOR format for the boundary file:
synopsys' Predictable Success
• (sdeio:save-tdr-bnd (get-body-list) "soifet_bnd.tdr")
synopsys' Predictable Success
4/2/2009
77
Defining Constant Doping Levels in Materials
• (sdedr:define-constantprofile "ConsLSilicon" "BoronActiveConcentration " 1e+15)
• (sdedr:define-constantprofile-material "PlaceCD .Silicon" "ConsLSilicon" "Silicon")
·"remJ!.m·W:\;W!Ijl!)m.:::::r:::::mrr~~.,-~
i ; """"""""'" ~'Pi~cD-5if;;; ~j
PlillCeTneotType
0"'""'" .J ORog;on .J ® Mat"'" I .. ·oon ~l
CortrtantProfiltDe1inition------------,
Name tComt.Sir~· ~I
Specb I Bor0n.Activ6Concentration ~J j i j!
~----~lo==~~-----D~~ Decay factor 0 On Replace
I Ch", .. ___ I I "'.Ie"-,n! I ~ ; L..-_______ ------_=-..1
synopsys' Predictable Success
Defining Constant Doping Levels in Regions
• (sdedr:define-constantprofile "ConsLEpi" "BoronActiveConcentration" 1e17)
• (sdedr:define-constantprofile-region "PlaceCD.Epi" "ConsLEpi" "R.Siliconepi")
rPlaalmentType---------,
o flef/'Mn
@Atglen I A.SI\Ic:onepl ~l
,CorohlntProllleDefnition------------, I NMn, 1<-:0;."_,...:",,,_·· _______ . ·_····--'~I I Spec~ lConct:ntnillon j
Decay FlIC101'
I _""""",eor-"""on . ¢ I Jle+17
10 DOn
: I Cl1~e~t I I'-_""_',_ .. _~"""""_t__.J OR"".,.
lb..-.-.-.-.-.. ---... --------... ---.~ .. - .. --.--... --.. --.. --.... -... --.. -.-... -.---~=I
synopsys' Predictable Success
4/2/2009
78
Defining Analytic Doping Profiles (1)
Define Baseline (sdedr:define-refinement-window "BaseLine.Source" "Line" (position -0.80.00.0) (position -0.2 0.0 0.0)) (sdedr:define-refinement-window "BaseLine.Drain" "Line" (position 0.2 0.0 0.0) (position 0.8 0.0 0.0)) (sdedr:define-refinement-window "BaseLine.SourceExt" "Line" (position -0.8 0.0 0.0) (position -0.1 0.0 0.0)) (sdedr:define-refinement-window "BaseLine.DrainExt" "Line" 0.1 0.0 0.8 0.0 0.0))
Junctions Basolino Name start Point EndPoint
BaseUne.Source .(l.80 .(l.20
Dram BaseUne.Orain 020) 0.80)
Qurce extenS10n BaseUne.SourceExt .(l.80) .(l.10)
rain extension BaseUne.OrainExt 0.10 0.80
I
Defining Analytic Doping Profiles (2) ~2~----------------'
Junctions Placement Name Baseline Name ProfiloName
PlaceAP.Source BaseUne.Source Gaussian.SourceOrain
Dram PlaceAP .Drain BaseUne.Drain Gaussian.SourceOrain
ource ExtenSIon PlaceAP .$ourceExt BaseUne.SourceExt Gaussian.SourceOrainExt
Dram Extension PlaceAP.DrainExt BaseUne.OrainExt Gaussian.SourceDrainExt
Profile Name Peak Peak Junction Junction Lateral Concontmtion Position Concontnation Depth Factor
Gaussian.SourceOrain x10,g cm--J Dum 1017 cm-3 0.12um 0.8 aussian.$ourceQrainEx 5x1016 cm-J Dum 1011'cm-J 0.035 m 0.8
~1
01
02
03
)-0.4
05
OS
07
08
09
-05 -025
• (sdedr:define-analytical-profile-placement "PlaceAP_Source" "Gauss_SourceDrain" "Baseline. Source" "Positive" "NoRepiace" "Eval")
o X
025 05
(sdedr:define-gaussian-profile "Gauss.SourceDrain" "PhosphorusActiveConcentration" "PeakPos" 0.0 "PeakVal" 5e19 "ValueAtDepth" 1e17 "Depth" 0.12 "Gauss" "Factor" 0.8)
• (sdedr:define-analytical-profile-placement "PlaceAP.Drain" "Gauss.SourceDrain" "BaseLine.Drain" "Positive" "NoReplace" "Eval")
• (sdedr:define-analytical-profile-placement "PlaceAP.SourceExt" "Gauss.SourceDrainExt" "BaseLine.SourceExt" "Positive" "No Replace" "EvaI'") (sdedr:define-gaussian-profile "Gauss.SourceDrainExt" "ArsenicActiveConcentration" "PeakPos" 0.0 "PeakVal" 5e18 "ValueAtDepth" 1e17 "Depth" 0.035 "Gauss" "Factor" 0.8) (sdedr:define-analytical-profile-placement "PlaceAP.DrainExt" "Gauss.SourceDrainExt" "Baseline. Drain Ext" "Eval")
synopsys' PredictableSucce$$
4/2/2009
79
Defining Mesh Strategies in Regions
• (sdedr:define-refinementsize "RefDef.Epi" 0.1 0.01250.0050.005)
(sdedr:define-refinementregion "PlaceRF.Epi" "RefDef.Epi" ''R.Siliconepi'')
(sdedr:define-refinementfunction "RefDef.Epi" "Doping Concentration" "MaxTransDiff' 1)
-"""" IIp,,;,,RF . .,,, . ~I
""""""''''''
lf~ ! o Aef/Wln 1 ~I ~ ®RogIOn IR.-""" ~I I
~ ~l i
0""1"'" 1
Reflf'lementDef.rutlon-.-----------
X Directlon yOirectlon ZOlrcctlon
Max Element Size 10.100000 ~_012500 Min EJementSlze rjooo-,-ooo-- r~ 0--050--00~- r----
Change P1ac:ement I I Dele:te PIacemerlt I
Defining Mesh Strategies in Refinement Windows
• (sdedr:define-refinementwindow "RefWin.all" "Rectangle" (position -0.5 1.0 0.0) (position 0.5 -0.2 0.0»
• (sdedr:define-refinementwindow "RefWin.Channel" "Rectangle" (position -0.1 0.00.0) (position 0.1 0.1 0.0» ( sdedr:define-refinementsize "RefDef.all" 0.25 0.1 0.250.1)
• (sdedr:define-refinementplacement "PlaceRF .all" "RefDef.all" "RefWin.all")
"'.;IA.I •• I •• · •.• ,
Placement Name
MaX Bement SIze
Min 8ementS@
~
I~ """"'="':=' =======::: I ·1 j
YOirectlon
10250000
r-lo,-ooooo---lo.looooo
~I
~I Z Direction
,Refrnemenifu'lctiOr'l:l---------------,
i 180"'Wtiv<Conrentntlon : ~I '"'" VoI-:-"'::::I>f,:-""""----:-1~1 "1' ---
II r~=·=--__ ...1I=Crit=,ria _ _.L.:I\kruo"'__ __ __'1 : :: :
I a.n,,_, I I ""'I,,,,,,,,",,,,,
4/2/2009
80
Defining a Multibox Mesh Strategy in Refinement Windows
• (sdedr:definemultibox-size "MB.Channel" 0.050.01250.025 1e-41 1.35)
• (sdedr:definemultiboxplacement "PlaceMB.Chann el" "MB.Channel" "RefWin.Channel" )
Build Mesh
Placement Name Llfptace_M_B.O=m __ ' _____ --'~l
rp",,""""TYP'
! RefI'Mn ,-, "-""o-.o,-ann-d ----:-.~ I
! rM"tiboxDFefl""~""~~ __ ~~_~ i -,I ,-!MB~~~ ______ ~~I
j X v
""" 1°·050000 - 10.01= - 1 M;n 10.025000 "'" 10.000100 "'" 1 Ratio )1.000000 Ratio 11.350000[ R>.tlo I ;~----------------~ I I =.,p,=",. I I "'."P""""'" I I 00" II L ....................... --........ -----.--.-... -............ -... -.. -. ".J
synopsys' Predictable Success
• Mesh> Build Mesh.
>-001
002
0>-
003
004
005
o
0.5
·0.5 -0.25 0 0.25 0.5 X
synopsys' Predictable Success
4/2/2009
81
4/2/2009
Sentaurus Structure Editor 3D Structure With Online Training Material
~--~~======--~
synopsys" Predictable Success
2D 501 M05FET • Draw> Auto Region Naming [off]
• Exact Coordinates
• Draw> Overlap Behavior> New Replaces Old
• Isometric View
• Draw> Create 3D Region> Cuboid
• (sdegeo:create-cuboid (position -0.25 -0.2 0) (position 0.25 0.2 -1.0) "Silicon" "SubsSilicon")
• (sdegeo:create-cuboid (position -0.2 -0.2 0) (position 0.2 -0.1 -0.2) "Oxide" "T renchOxide _Right")
• {sdegeo:create-cuboid (position -0.2 0.1 0) (position 0.2 0.2 -0.2) "Oxide" ''TrenchOxide_Left")
• (sdegeo:create-cuboid (position -0.15 -0.2 0) (position 0.15 0.2 0.002) "Oxide" "GateOxide")
• (sdegeo:create-cuboid (position -0.1 -0.1 0.002) (position 0.1 0.2 0.1) "PolyS;" "PolyGate")
synopsys' Predictable Success
82
Changing View
Poly Re-oxidation
• Old Replaces New f1)JJ!iilJi;ij]@~ tOld replaces nOWl
• (sdegeo:set-default-boolean "BAB")
• (sdegeo:create-cuboid (position -0.103 -0.1030) (position 0.103 0.2 0.1) "Oxide" "PolyReOxide1 If)
• (sdegeo:create-cuboid (position -0.15 -0.103 0) (position 0.15 0.2 0.005) "Oxide" "PolyReOxide2")
4/2/2009
synopsys' Predictable Success
synopsys' Predictable Success
83
Nitride Spacer
• (sdegeo:create-cuboid (position -0.15 -0.15 0) (position 0.15 0.2 0.08) "Si3N4" "NiSpacer")
• (sde:define-parameter "fillet-radius" 0.03 0.0 0.0 )
• (sdegeo:fillet-edges (list (car (find-vertex-id (position -0.15 -0.15 0.08))) (car (find-vertex-id (position 0.15 -0.150.08))) ) filletradius)
synopsys' Predictable Success
Define Contacts
I ~ It
(sdegeo:define-contact-set "gate" 4.0 (color:rgb 1.00.00.0) "##" )
(sdegeo:define-contact-set "drain" 4.0 (color:rgb 1.00.00.0 ) "II" ) (sdegeo:define-contact-set "source" 4.0 (color:rgb 1.00.00.0) "==" )
(sdegeo:define-contact-set "substrate" 4.0 (color:rgb 1.00.00.0 ) "<><>" )
synopsys' Predictable Success
4/2/2009
84
Setting Contacts at Existing Faces
i none
gate drain source
• Contacts> Set Face(s)
I§J~:< 0'0
, IAPerture Selec(
• (sdegeo:set-current-contact-set "substrate")
• (sdegeo:set-contact-faces (find-face-id (position 00 -1)) "substrate")
• (sdegeo:set-current-contact-set "gate")
• (sdegeo:set-contact-faces (find-face-id (position 0 0 0.1)) "gate")
synopsys' Predictable Success
Setting Contacts at New Faces
The corresponding Scheme commands for creating and deleting the two metal regions are:
(sdegeo:create-cuboid (position 0.17 -0.1 0) (position 0.25 0.1 0.05) "Metal" "Source")
• (sdegeo:create-cuboid (position -0.25 -0.1 0) (position -0.17 0.1 0.05) "Metal" "Drain")
• (sdegeo:delete-region (find-body-id (position 0.22 0 0.025))) • (sdegeo:delete-region (find-body-id (position -0.22 0 0.025)))
The corresponding Scheme commands for placing the source and drain contacts are:
(sdegeo:set-current-contact-set "source") • (sdegeo:set-contact-faces (find-face-id (position -0.22 0 0)) "source") • (sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-faces (find-face-id (position 0.220 0)) "drain")
synopsys" Predictable Success
4/2/2009
85
Defining Constant Doping Levels in a Region
• (sdedr:define-constant-profile "Const.Bulk" "BoronActiveConcentration" 1 e17)
• (sdedr:define-constant-profile-region "PlaceCD.Bulk" "Const.Bulk" "SubsSilicon")
• (sdedr:define-constant-profile "Const.Poly" "ArsenicActiveConcentration" 1 e20)
• (sdedr: define-constant-profile-region "PlaceCD. Poly" "Const. Poly" "PolyGate")
I~
I~- ;1 1,-"
Defining Analytic Doping Profiles
• Mesh> Define Ref/Eval Window> Rectangle. • (sdedr:define-refinement-window "Baseline. Source" "Rectangle"
(position 0.30 -0.25 0.0) (position 0.15 0.25 0.0) )
• (sdedr:define-refinement-window "BaseLine.Drain" "Rectangle" (position -0.30 -0.25 0.0) (position -0.15 0.25 0.0) )
• Device> Analytic Profile Placement • (sdedr:define-gaussian-profile "Gauss.SourceDrain"
"ArsenicActiveConcentration" "PeakPos" 0.0 "PeakVal" 1e19 "ValueAtDepth" 1e17 "Depth" 0.1 "Gauss" "Factor" 0.8)
synopsys' Predictable SUC~$$
• (sdedr:define-analytical-profile-placement "PlaceAP.Source" "Gauss.SourceDrain" "Baseline. Source" "Both" "NoReplace" "Eva I")
• (sdedr:define-analytical-profile-placement "PlaceAP.Drain" "Gauss. SourceD rain" "Baseline. Drain" "Both" "NoReplace" "Eval")
synopsys' Predictable Success
4/2/2009
86
Defining a Meshing Strategy in a Window
• (sdedr:define-refinement-window "RefWin.Global" "Cuboid" (position -0.25-0.2 -0.5) (position 0.25 0.2 0.1))
• (sdedr:define-refinement-size "RefDef.Global" 0.1 0.1 0.1 0.05 0.05 0.05 )
• (sdedr:define-refinement-placement "Place. Global" "RefDef.Globaln
"RefWin.Global" )
• (sdedr:define-refinement-window "RefWin.Active" "Cuboid" (position -0.25 -0.2 -0.15) (position 0.25 0.2 0.0))
• (sdedr:define-refinement-size "RefDef.Activen 0.025 0.025 0.025 0.0125 0.01250.0125 )
• (sdedr:define-refinement-placement "Place.Active" "RefDef.Active" "RefWin.Active")
r:Vtlfiniffffft"f'ITf?WtiiW.-'7 fff?/ff"WFr~rwepw11rtto.~~
1-- ~- [:-I
.fIcfI~ !_o_ ~I c=J l O/lq>n I ~ ~I '
J Ololal_ I ~I c=J : I -~- .-------- ------ ---- ~ ---, i .... i-- 'I ' ! i--- ~~~, 1--- ~~~; 1 r:==::--·--;IIv.:·:----·· .. ··:·l-; .. ---··-.. ----·· ... ·ll.
Il[ ______ .. ~~:___I= _________ ->~~J I! i~~==~====~----~~~ 11--11 1 ~; I .. ________ :J
synopsys' Predictable Success
Defining a Multibox Mesh Strategy in a Refinement Window
• (sdedr:define-refinementwindow "RefWin.Channel" "Cuboid" (position -0.12 -0.1 -0.05) (position 0.12 0.1 0»
• (sdedr:define-multibox-size "RefDefMB.Channel" 0.1 0.1 0.01 0.050.050.001 1 1 -1.5 )
• (sdedr:define-multiboxplacement "PlaceMB.Channel" "RefDefMB. Channel" "RefWin. Channel" )
t!"ml:>tlrla:Ollrn.1 ;1
synopsys-Predictable Success
4/2/2009
87
Build Mesh
The corresponding Scheme command is: • (sde:build-mesh "mesh" "-P" "3dmos") In the TOR format, the Scheme command for the meshing operation is: • (sde:build-mesh "mesh" "-P -F tdr" "soifet_msh") Note: use SNMESH (doping profile [tdr] can be viewed with option in postprocess)
synopsys' Predictable Success
synopsys' Predictable Success
4/2/2009
88
Sprocess simulation by Ligament
• Sprocess > properties: select "Use Ligament" option on the dialog box
• Edit Input> Ligament flow: set up a process flow
• Ligament Workspace: refer to on-line training material "Ligament 0.7 Ligament Workspace"
• On-line training material provide a detail introduction in chapter "Ligament"
synopsys' Predictable-Success
Ligament • Use Ligament to Build up the Device Structure
........... bO~On
synopsys' Predictable Success
4/2/2009
89
Environment & Substrate Names
S'-:;::::i'Flow"i-:R~ t--~ substrate
9--!i£" well 43-:!~ Gox e-!~ Po!yGate e-!Ei" LOO e.-:.!~ S.pacer l3-!~ SO e-=!~ Metal r!1t- struc 9-!~ extraccsa ..... _e
title dop~
"e d~pant
:.4! ~.9. nM.OSFET ~a~ : boron concen
# 2D nMOSFET save boron concen
Name : ... __ ~y~e ~"")trtle' ·········S·tnn·g·_·_·-
l-:-::-(-:l s.ave Boolean f-{-) grid : Boolean i-(-) debug . Soolean H-) chec.~'.d Boolean
~~=~ :~:~~ :-~:~~:r q;~~~~ .~~: j--(-) node .. string H-) sIde : Sjde }-(-) g~p'hjcs . Boolean r-:--<-) depth :"Dlstarlce 1--<-) uSer-9r1d ; GrId 8--(-) gnd_refinement _ :'~ridff~! ~-:-(-) ~~pr~~ .. ~~I~,.. velf:. Q~aJ}~~_ r--<-) tsuprem4_delta_ho~ Distance r--(-) tsuprem4_mln_ vertl~ Distance Y-:-) tsupre~_min_hOrI.z~ Dj~tance_.
Name '~:'j"dopa~t'-'-(-) concentration i..-.{-) resistivity 1-{-) orientation Y-ltype
Type
"O'opa"t Concentration Resistivity Number
Type
Value
iii 20 -n~iOSFET we true false false false sprocess
"0011 'n@oode@ \@node@ front r3Jse
Un"
5 "um Ad:-'3!.lCed~al!br:·
0.5 'O.S :um
0.1 0.1
Value
boron 1e15 o 100 defautt
/emJ ohm-em
synopsys' Predictable Success
Well Implant, Gate Oxide, PolyGate
material sp~cies
:-sp~"a~s species time ~atefjai'v
'iext
'dia-s' mate~ii1 material
'matertaJ
A
.. 20 nMOSFET save. boron
·OXide···· ""biiro"Tl
boron boron O.~_~ec _ oxide
.- Gate
10 min ··S mln~-
pOlyGat~ poly.
poly resist oxide 10 min
conce
thicknes doss······ dose dose
"t~~p.~ra thicknes
te~per tempe t~'mp~~ ~.P.~~.~s
... ~P'!p'g.~.~ thicknes ttircknes thicknes
1~~P~~
synopsys' Predictable Success
4/2/2009
90
LDD, Nitride Spacer, Source/Drain, Metal Pad
Names . , .... _.~9_ .. _ .. _. .. -.. -~~~!~. -~ .. ; AI
8--~Flow f..-·B environment title ., 20 nMOSFET save ;-~4,l substrate 13---!~ well
dopaf'!1 boron concent
13-'}; Gox e-·!.F Po!yGate S,..!~ LDD 1 ~~. ~omment text ... LDD
:-----;}> Insert dlDS spracss r-~imp!~t sp~-;:Ies. boron dose r--~ implant species tioron . dose J--~ implant specie:s. boron "dose , r-~~ Implant $p~.cle_~ ~or'~n . ~C?s~
1 l--~jnsert dlos spraees ~~.tmp!?O~ sp~c!.es arsenic dose L-Jl~ anneal ,time 0.02 sec te_mp:9:~
~··:-T-!.~ Spacer I. ~comm~nt text . ~pacer I, deposit material nitride thlCknes I l--"T etch material nitride thlcknes 1 ~e1Ch matedai oxide thicknes &.T!~ SO 1 -}--c;D comment text SD 1 }-~insert diDS sproees
I }--~ !mplant species arsenic dose L_,..6"", anneal time 0.02 sec tempera:
~~~h material oxide : 1hlcknes ~~depOSjt material aluminum thicknes f-/;5 rnsert dlos sproc.es
: r--i!, etch matenal aluminum thlcknes ! l~~etch material resist thicknes 8--!a- struc 9--!~ extract_save
Environment
• Title: 20 nMOSFET 0.18
• Simulator: sprocess
• Region: 0 0 1 1
Substrate
• Dopant: boron
• Concentration: 1 e15 Icm3
4/2/2009
synopsys' Pred lctable SUccess
synopsys' Predictable Success
91
4/2/2009
Well
• Deposit: oxide, 0.01 um
• Implant: • Boron, does 2e13/cm2, energy 200 keV
• Boron, dose 1e13/cm2, energy 80 keV
• Boron, dose 6e12/cm2, energy 25 keV
• Anneal: 0.3 sec, 1050 C, 1 atm, Nitrogen 100%
• Etch: oxide, strip
synopsys' Predictable Success
Gate Oxide
• Anneal: 5 min, 650-850 C, 1 atm, Nitrogen 100%
• Anneal: 10 min, 860 C, 1 atm, Oxygen 100%
• Anneal: 5 min, 850-650 C, 1 atm, Nitrogen 100%
• Grid Remesh (Insert)
• grid remesh
• select z=Boron
• layers
synopsys' Predictable Success
92
Poly Gate
• Deposit: poly, 0.18 urn
• Mask (insert): • mask name=gate_mask left=-0.1 right=\$lgate/2 negative
• photo mask=gate_mask thickness=2
• Etch: poly, 0.2 urn, anisotropic
• Etch: resist, strip
• Etch: oxide, 0.1 urn, anisotropic
• Anneal: 10 min, 900 C, 1 atm, nitrogen 5 IImin, oxygen 5 IImin
synopsys" Predictable Success
LDD
• Remesh (insert) • refinebox silicon min= {O.O O.S*\$lgate-O.OS} max= {0.06 0.S*\$lgate+0.04}
xrefine= {O.01 0.01 O.01} yrefine= {O.01 0.003 O.01} add • refinebox remesh • transform reflect left
• Implant: • boron, Dose=\$HaloDose/4 cm2, energy= \$HaloEnergy keV, tilt=30,
rotation=O • boron, Dose=\$HaloDose/4 cm2, energy= \$HaloEnergy keV, tilt=30,
rotation=90 • boron, Dose=\$HaloDose/4 cm2, energy= \$HaloEnergy keV, tilt=30,
rotation=180 • boron, Dose=\$HaloDose/4 cm2, energy= \$HaloEnergy keV, tilt=30,
rotation=270
• Cut (insert): transform cut location=O.O left
• Implant: arsenic, 1 e15 cm2, 20 keV
• Anneal: 0.02 s, 1050 C, 1 atm, nitrogen 100%
synopsys' Predictable Success
4/2/2009
93
Spacer
• Deposit: nitride, 60 nm
• Etch: nitride, 84 nm, anisotropic
• Etch: oxide, 10 nm, anisotropic
Source/Drain
• Mesh refine (insert) • refinebox silicon min= {O.O \$lgate/2-0.02} max= {0.22
\$lgate/2+0, 15} yrefine= {0.02 0.01 0.02} add
• refinebox remesh
• Implant: arsenic, 4e15 Icm2, 30 keV
• Anneal: 0.02 s, 1080 C, 1 atm, nitrogen 100%
4/2/2009
synopsys' Predictable Success
synopsys" Predictable Success
94
Metal
• Etch: oxide, 5 nm, anisotropic
• Deposit: aluminium, 30 nm
• Mask: • mask name=contacts_mask segments = {-O.1 \$lgate/2-0.005
\$lgate/2+0.1 \$ymax} negative
• photo mask=contacts_mask thickness=2
• Etch: aluminum, 0.25 um, anisotropic
• Etch: resist, strip
synopsys' Predictable Success
Finalise (insert) • transform clip min= {-1 -1} max= {2 10}
• contact name=gate point x=-O.2 y=O.001 replace • contact name=drain point x~0.02 y=\[expr \$ymax - 0.001\] replace • contact name=substrate box silicon xlo=1.5 ylo=O xhi=2.5 yhi=\$ymax
• set Ygox \~nterface oxide /silicon y = 0.001 \] • set Ypol \~nterface poly /oxide y = 0.001 \] • setYtmp \[expr\$Ygox + 0.005\] • setTox \[expr\$Ygox - \$Ypol\]
• sel z = NetActive • set Xgd \[interpolate x = \$Ytmp silicon val=1 e15\] • set Xj \[interpolate y = 0.5"\$lgate+0.39 silicon val=1e15\]
• #set Lgeff x • puts \"DOE: Lgeff\[format %.3e \[expr 2.0*\$Xgd\]\]\"
• #setXj x • puts \"DOE: Xj \[format %.3e \$Xj\]\"
• #setYgox x • puts \"DOE: Ygox \[format %.3e \$Ygox\]\"
• #setTox x • puts \"DOE: Tox \[format %.3e \$Tox\]\"
synopsys' Predictable Success
4/2/2009
95
synopsy~r Predictable Success
cvQVrfWrve: long channel transistor
Accumulation region:
Good fit indicates
correct oxide thickness.
Bottom region:
Good fit indicates. that the channel profile is
correct
Inversion region:
Used to adjust the doping concentration
in poly-SiJicon.
2e-14~--------~--------~~Jr--lL ______________ J
~ ~ le-14
-2 -1
Threshold voltage:
yDopant concentration at the gate oxide interface
)- Interface charges
synopsys' Predictable Success
4/2/2009
96
C-V Device Simulation
• Small-signal AC analysis (2007.12 P.183)
• AC simulation are performed in mixed mode (2007.12 P.163).
• Extract conductance and capacitance of each node, and output matrix A (conductance) and matrix C (capacitance).
• j = Yu = Au + iwCu
• j is the vector containing the small-signal currents at all nodes.
• u is the corresponding voltage vector.
synopsys' Predictable Success
C-V Simulation Command File
Device "device1" { File { "define device input and output file"}
Electrode { "same with IV simulation"}
Physics { "same with IV simulation and tum on minority carrier quantum
}
File
Plot
Math
potential equation for accumulation side CV extraction" }
{ "define system output file"}
{ "same with IV simulation"}
{ "same with IV simulation" }
System { "based on previous device1 and the voltage source of each node construct a simple circuif' }
Solve { "set bias sweeps sequence, solve transport models and extract AC parameters" }
synopsys' Predlctable$uccess
4/2/2009
97
" -~
c-v Device Simulation Result
• Cgg: gate node capacitor
• Ccg: drain node + source node
• Cbg: substrate node
Cgg = Ccg + Cbg
1e-013
1e-15
-1
Gate Voltage (V)
~ 5e-014 v
-1 o
Convergence - Breakdown Device Simulation
• n-th step converge, next l1 V n+1 > l1 V n
• n+1-th step diverge, then l1 V n+1 = l1 V n/2 • The voltage step will be divided by 2 again and again, until it converges or until it reaches a minimum step that we define in the command file.
10
,_-----VL: ,
4/2/2009
synopsys' Predictable Success
synopsys' Predictable Success
98
Breakdown Device Simulation
• An approach to solve divergent and snapback issues
• Introduction please refer to on-line training material "SDevice section 0.1 MOSFET Breakdown Simulation"
~ ... 10S Breakdown
Vd_outer (force)
rl l----,
Drain Voltage (V)
synopsys' Predictable Success
Breakdown Device Simulation
• Modify SDevice command file
• Turn on Avalanche and Band2Band model
• Solve dual carrier transport
• Detail please refer to 90nm nMOS breakdown example.
synopsys' Predictable Success
4/2/2009
99
Preparation
• Copy the 0.18um_nMOS project and rename it as 90nm_nMOS, then clear up all the output files
• SProcess uses the -f option to speed up the simulation time for structure verification
• -f option skip diffusion and monte carlo implant step
• Refer to SProcess manual 2007.12 P .52
• It will cause some parameter extraction failure because of a missing net doping profile. When we are sure the device structure is correct, we should remove the -f option to do a complete simulation.
4/2/2009
synopsys' Predictable Success
synopsys' PrecfictableSucce$s
100
Reference: SProcess, pS2
• Command-line options
Option
--Fa"n!ode
--GENES.IS€..~;:
--pdb
Shottnam~
-b
-f
Function
Switcb off graphics.
Gt."llC'~tI.c stJ:ucturc~ 00 ditru};ton.. n(l rncimpiUlll. and so Oil.
-11 SwItch off Jot.: fil~ creation.
-p Run F"J.t"::U11Ct.:.( Dat.tt'ta;;~ Browser 'Showing par:l.mct€'ls 3.~ th~y ,:tfc s>.!'t duriUf: nll1-tim~ 11lA.~ludtt dcia.ult pafatnt.!'tr.:t"'3 and pafamc("'" ffOOl the input 111< if ~p~ifi.ed.
synopsys' Predictable Success
Structure Comparison
• 0.18um nMOS • 90nm nMOS
synopsys' Predictable Success
4/2/2009
101
Process Comparison
• 0.18um nMOS
WeliNth implant & anneal Boron dose=2e13 energy=200 till=O rol=O Boron dose=l e13 energy=80 till=O rol=O Boron dose=6e12 energy=25 till=O rol=O diffuse temp=1050 time=0.3<s>
Gox-33A diffuse temp=650 ramprate=0.6666 time=5 diffuse temp=850 time=10 02 1 atm diffuse temp=850 ramprate=-O.6666 time=5
POLY height = O.18um deposit poly type=isotropic thickness=0.18
Halo/LDD implant & anneal Boron dose=le13 energy=15 till=30 I roI=0,90,180,270 Arsenic dose=le15 energy=20 tilt=O rol=O diffuse temp=l 050 time=0.02<s>
• 90nm nMOS WeliNth implant & anneal Boron dose=2e13 energy=200 till=O rot=O Boron dose=le13 energy=80 till=O rot=o Boron dose=8e12 energy=30 till=O rol=O diffuse temp=l 050 time=0.3<s>
Gox-18A diffuse temp=650 ramprate=0.6666 time=5 diffuse temp=850 time=l 0 02=0.8<l/min> N2=9.2<l/min> 1 atm diffuse temp=850 ramprate=-O.6666 time=5 ../
POLY height = O.15um deposit poly type=isotropic thickness=0.15
Halo/LDD implant & anneal Boron dose=2e13 energy=12 tilt=30 I rot=d,90,180,270 Arsenic dose=l e15 energy=5 tilt=O rot=o diffuse temp=l 020 time=0.03<s>
synopsy:r Predictable Success
Process Comparison • 0.18um nMOS
Nitride Spacer deposit nitride type=isotropic thickness=0.06 etch nitride type=anisotropic thickness=O.084 etch oxide type=anisotropic thickness=O.Ol
Source/Drain implant & anneal implant Arsenic dose=4e15 energy=30 till=O rot=O diffuse temp=1080 time=0.02<s>
• 90nm nMOS
ONO Spacer deposit oxide type=isotropic thickness=0.005 deposit nitride type=isotropic thickness=0.015 deposit oxide type=isotropic thickness=0.06 diffuse temperature=720 time=20 etch oxide type=anisotropic thickness=0.1 etch nitride type=anisotropic thickness=0.03 etch oxide type=anisotropic thickness=0.015 #- consider native oxide ------deposit oxide type=isotropic thickness=0.0015
Source/Drain implant & anneal implant Phosphorus dose=1e15 energy=6 till=O rol=O implant Arsenic dose=5e15 energy=30 tilt=O rol=O diffuse temp=l 050 time=0.03<s>
synopsys' Predictable Success
4/2/2009
102
4/2/2009
SProcess Mesh Comparison • 0.18um nMOS • 90nm nMOS
==--------~~- ---------~
SDevice Mesh Comparison • 0.18um nMOS • 90nm nMOS
=-=-=c;;-----,,------: _'--1
103
Id_ Vg Curve Comparison
• 0.18um nMOS • 90nm nMOS
• Vdd=1.5v; Vds=O.05v • Vdd=1.2v; Vds=O.05v
0.0001
8e-05
E 6~05
~ ::!:! 4~
2e-05
0
Hints
O.18um VS. 90nm nMOS IdVg Vds=O.05
.---gm_0.18um
·---gm_90nrn
-ld_0.18um -ld_90nm ;
0.0002
0.00015
00001
5~05
+-~~~~~~r-r-~~~~~-+O
0 0.5 1.5
Vg (volt)
(!l
3
~ <' ~ c· 3 ~
• Need to translate the process conditions into correct syntax of Sprocess.
• Poly height has been changed from O.18um to O.15um, need to update the coordinate of gate contact in Sprocess.
synopsys' PredlctableSuccess
• After finish the modification of Sprocess, whole simulation flow (Sprocess, SSE, Sdevcie, Inspect) can be executed well.
• In Sprocess, fine tune LOO & SO refine-box to get a more accurate doping profile.
• In SSE, fine tune variable "PNres" to optimize the mesh of LOO and SO junction to get a more accurate Sdevice simulation result.
synopsys' Predictable Success
4/2/2009
104
Modify nMOS Template to pMOS
• SProcess: change to pMOS process condition
• SDE: change PLOY dopant type from N-type to P-type
• SDevice • Change majority carrier from electron to hole and related
models. (Exchange e and h in input file in most cases.)\
• Biasing Condition
• Inspect: change device type and extraction region for "Extraction library"
synopsys' Predictable Success
Structure Comparison
• 90nm nPOS • 90nm nMOS 1... ..
synopsys' Predictable Success
4/2/2009
105
synopsys" Predictable Success
Process Comparison
• 90nm pMOS
WeliNth implant & anneal Phosphorus dose=2e13 energy=3S0 tilt=O rot=O Phosphorus dose=1 e13 energy=200 tilt=O rot=O Arsenic dose=4e12 energy=100 tilt=O rot=o diffuse temp=1 OSO time=0.3<s>
Halo/LDD implant & anneal Arsenic dose=2e13 energy=80 tilt=30 I rot=O,90,180,270 BF2 dose=6e14 energy=3 tilt=O rot=o diffuse temp=1 020 time=0.03<s>
Source/Drain implant & anneal implant Boron dose=1e1S energy=3 tilt=O rot=O implant Boron dose=Se13 energy=6 tilt=O rot=O diffuse temperature=10S0<C> time=0.03<s>
• 90nm nMOS WeliNth implant & anneal Boron dose=2e13 energy=200 tilt=O rot=O Boron dose=1 e13 energy=80 tilt=O rot=o Boron dose=8e12 energy=30 tilt=O rot=O diffuse temp=1 OSO time=0.3<s>
Halo/LDD implant & anneal Boron dose=2e13 energy=12 tilt=30 I rot=O,90,180,270 Arsenicdose=1e15 energy=5 tilt=O rot=O diffuse temp=1020 time=0.03<s>
Source/Drain implant & anneal implant Phosphorus dose=1e15 energy=6 tilt=O rot=O implant Arsenic dose=5e15 energy=30 tilt=O rot=O diffuse temp=1050 time=0.03<s>
Structure Extraction Source/Drain implant & anneal set Xgd Dnterpolate x = $Ytmp silicon val=-1e15] set Xgd Dnterpolate x = $Ytmp silicon val=1e15] set Xj [interpolate y = 0.5*$lgate+0.39 silicon val=-1e15] setXj Dnterpolate y = 0.5*$lgate+0.39 silicon val=1e15]
synopsys' Predict3bleSuccess
4/2/2009
106
Other Parameters • 90nm pMOS
Poly Doping (sdedr:define-constant-profile "Const.Gate" "BoronActiveConcentration" PolyDop )
Biasing Goal { Name="drain" Voltage=-@Vds@ } Goal { Name="gate" Voltage=-@Vdd@ }
Coupling Coupled { Poisson Hole hQuantumPotential }
Inspect
• 90nm nMOS Poly Doping (sdedr:define-constant-profile "Const.Gate" "BoronActiveConcentration" PolyDop )
Biasing Goal { Name="drain" Voltage=@Vds@ } Goal { Name="gate" Voltage=@Vdd@ }
Coupling Coupled { Poisson Electron eQuantumPotential }
Inspect setT ype pMOS set SS [ExtractSS SS
set Type nMOS IdVg($N) [expr $Vti+O.0511 set SS [ExtractSS SS IdVg($N) [expr $Vti-O.0511
synopsys' Predictable Success
synopsys' Predictable Success
4/2/2009
107
4/2/2009
Outline
• How to register a SolvNet account?
• What kind of TCAD resources we can find on SolvNet?
• Software,
• Manual
• Release Notes
• TCAD Example updates
synopsys' Predictable Success
SolvNet Website http://solvnet.synopsys.com/
synopsys'
Wek:o.me To Syn0:p-sysSlg" In
2f~"" .... ",...,...,.tr,s-.~"""",,," ... ,s.-.:w:~S .. )u<>-••. ,~oo"",1·"-'¥'"'4 _ .. , '.r"·;; 5.:~¥·~+;:.u.,."....!:;',;j"""""V.,.M.",~~~"""","f;t_. I ~~~'--~~', L
Apply an account firstly Login
synopsys' Predictable Success
108
SolvNet Register
synopsys'
New User Registration
SolvNet Register
O::.rl;- ::)~ 6 ~ :;~ ;.$ ..... ":1' _r'.:"~~; ;-~~J{lF~;;;;:;';;.~';;':;';;;;:;:';;:;;';~;-;;";··-······ -.-... -
New User Registration
FlrstNllm.l
,I, ;;--....,,,"',~"-, .. ~" ... ,..,,;;;'tr-.t ...... , ro ... l';l' .',r,"; ::,rr.n.;: 'h ... ;';~-' ~
~:::()~'. ~: .. <--f;" ;-;r,. ... ,.--.<; :,~ .• 1 r.,-,nn ~{:;-v :-.-ro • .: .. -. ;e':''!::r
~,.,::. :l-., ... ,.:j ••. .,->, /:-;",ns" ·J~.Hr-: .. .,..>. fl' .l ~,.~ J;:r",--m,,,-.c>
4/2/2009
synopsys' Predictable Success
.. :'k,""" ,,,,,,"",f<. ,..)<..~"'_ t ... ,"-7-.. ... C' .• ":-:,;,:::,.,,. '~I'A*.tt~.l .::f <,!~""T ~ .. "n
synopsys' Predictable Success
109
SolvNet Register -----------'3 cJ Go
I synopsys 50;,,["2,
r'jj/':Ti ! -,i§iitr-tttm1ilti!MtHHS __ 4#iiMillli@[email protected]
New Use,. Registration
Important: Please Read Before Registering i To. access to all Synopsys Online Services. ,;ou must provlde an k~r"·,,, S'te lC In the field below These serdees include .
~ SoM'·Jet Know1e::!ge Base of self-help documents ~ OnGne Product DocumentatlOn • SmartKe\, license Retrie-.C31 .,. Electronic Software DO'A<nloads • ViewSupport and Support Case Tracker - ",19* status.of open support cases
Add Another Site
You can find your site 10 from your license file
SolvNet Register
syn0 psys, 50ivN",
New User Registration
Thilnk you ror submitting your SolvUet registration. Your registration is not yet complete.
Since you are requesting access to confidential Synopsys infurmati::m, ",e wll1 need to 'ie-rifj your site infotrro3tion_ You will recerve an email asking you to confirm your email address. Please be sure to read and act on that message
Applicant will receive a confirmation letter
Registratiqn Help
synopsys' Predictable Success
synopsys' Predictable Success
4/2/2009
110
SolvNet HomePage
search TCAD documents by keyword
ViHATS Nfj."'1 ON SOLVNH
{'<';"-">~~~"S'I'~ c"",: ,-, ;" ;)!~<'>< .' r-a,><,';-'> Th~ Soh-Net Do'hnlo.ad Center f<:!atur,:-s a redeslqned int~".! that dispLays the lat~st ,jownl.r:.ad information for "our S..nopsvs products in a =entraliziXIlocation. ..... ,-" - - . ~ .:. ~.
i~:i~~~· ~~\~~E~; ::;~l~;~~\:~~;~{"g mcduJes tv IEam about r~le3s-e .:nh3~m.:nts to DFT, Star RCXT, T'2trar-laY", SSD Compiier, DesliJf1 CQmpd",r, Ie Compder. NanoTime, Pnm~Tlm-=, Pru.neTlflle ~·X, and ~!J.,.,~r Compd':"!f.
. TECHNICAl.. NEWS A.ND EVENTS
S.?'MC "):H:i~;; ?I~ for Pap~s -:. ,':::- !; ''-',- Ie:' .,". J
Predictable Success
4/2/2009
> VI."!"" ST AR<;
> My SubscriplJor:lS
> ttv Product!>
synopsys' Predictable Success
synopsys' Predictable Success
111
Untitled We will be conducting a TCAD Sentaurus product tralnlng in our office on the 8th and 9th of April in our synopsys singapore training center: 300 Beach Road, #31-06, The concourse, singapore 199555.
The agenda are as follows: Title: Sentaurus TCAD Training for CMOS Application
Day 1:
Day 2:
Sentaurus TCAD Overview Sentaurus workbench Sentaurus Process 1D & 2D Tecplot SV Sentaurus Structure Editor - Building Meshes Sentaurus Device I-V simulation Inspect
90nm nMOSFET Exercise c-v Device Simulation Breakdown Device Simulation pMOSFET Device Simulation Ligament Introduction SolvNet Resources
.------------------~-~~---.-
t iC
a t 7i
o
.-
Page 1