Seminar on PB-CAM

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    A LOW-POWER

    PRECOMPUTATION BASEDCAM

    ANSHUL VYAS

    11EC62R02

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    Overview

    Introduction

    Precomputation-Based CAM (PB-CAM)

    Parameter extractor

    PB-CAM Word Circuit

    Parameter comparison

    Ones Count Approach

    Block-XOR Approach

    Experimental Results

    Future Scope Conclusion

    References

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    Introduction

    Large number ofComparisons

    Consumes most of CAMPower

    Reducing Comparisonsto reduce power

    Courtesy: Wai-Kai Chen, The VLSI Handbook, chap. 56,Content Addressable Memory.

    Functional Block Diagram of CAM

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    Architecture of PB-CAM

    To reduce comparisonoperations betweeninput and stored data

    Parameter Extractor,

    Parameter memoryadded

    For m words by n bits CAM,

    Parallel CAM : m*n

    PB-CAM:1st comparison: m*[log(n+2)]

    2nd comparison: m*n/n+1

    Total: m*{[log(n+2)]+1}

    Courtesy: C.S. Lin, J.C. Chang, and B.D. Liu, A low-power Precomputation-based fully parallel content-addressable memory, IEEE J. Solid-State Circuits, vol. 38, no. 4, pp.654662, Apr. 2003.

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    Ones Count PB-CAM

    Courtesy: K. Pagiamtzis and A. Sheikholeslami, Content-addressable memory (CAM) circuits andarchitectures: A tutorial and survey,IEEE J. Solid-State Circuits, vol. 41, no. 3, pp. 712727, Mar. 2006.

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    Ones count Parameter Extractor

    Courtesy: C.S. Lin, J.C. Chang, and B.D. Liu, A low-power Precomputation-based fully parallelcontent-addressable memory, IEEE J. Solid-State Circuits, vol. 38, no. 4, pp.654662, Apr. 2003.

    Block diagram Circuit design

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    Traditional Dynamic CAM Word Circuit

    Extra precharge time foreach data searchingoperation

    Charge Sharing and NoiseProblems

    Clock signal is necessaryfor the operation

    Courtesy: C.S. Lin, J.C. Chang, and B.D. Liu, A low-power Precomputation-based fully parallel content-addressable memory, IEEE J. Solid-State Circuits, vol. 38, no. 4, pp.654662, Apr. 2003.

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    Proposed Pseudo-nMOS CAM word circuit

    V=1(Invalid Data)pM1 OFF and nM1 ONDataMatch = 0

    V=0(Valid Data)

    pM1 ON and nM1 OFFDataMatch signaldepends upon thecomparison results ofCAM cells

    Disadvantage Static Power Dissipation m-1 words mismatch

    and thus static powerdissipation is very high

    Courtesy: C.S. Lin, J.C. Chang, and B.D. Liu, A low-power Precomputation-based fully parallelcontent-addressable memory, IEEE J. Solid-State Circuits, vol. 38, no. 4, pp.654662, Apr. 2003.

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    Based on PB-CAM Architecture

    Parameter comparisoncircuit used to controlpull-up pM1

    Average number of

    parameter match:m/(n+1)

    Static power dissipationfor [m/(n+1)]-1

    Courtesy: C.S. Lin, J.C. Chang, and B.D. Liu, A low-power Precomputation-based fully parallelcontent-addressable memory, IEEE J. Solid-State Circuits, vol. 38, no. 4, pp.654662, Apr. 2003.

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    Traditional 9-T CAM Cell

    6-T SRAM to store data

    PTL-type XOR gate forcomparison

    Courtesy: C.S. Lin, J.C. Chang, and B.D. Liu, A low-power Precomputation-based fully parallelcontent-addressable memory, IEEE J. Solid-State Circuits, vol. 38, no. 4, pp.654662, Apr. 2003.

    FloatingZero(Mismatch)

    BLi Qi CAMCell

    0 0 Floating

    0 1 0

    1 0 0

    1 1 Floating

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    Proposed 7-T CAM Cell

    Advantages

    1. Searching time faster

    2. Simplifies HardwareDesign

    3. Reduces OperatingVoltage

    Courtesy: C.S. Lin, J.C. Chang, and B.D. Liu, A low-power Precomputation-based fully parallelcontent-addressable memory, IEEE J. Solid-State Circuits, vol. 38, no. 4, pp.654662, Apr. 2003.

    BLi Qi CAM Cell PB-CAM

    0 0 Floating Floating

    0 1 0 Floating

    1 0 0 0

    1 1 Floating Floating

    Floating

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    PB-CAM Word Structure

    Courtesy: C.S. Lin, J.C. Chang, and B.D. Liu, A low-power Precomputation-based fully parallelcontent-addressable memory, IEEE J. Solid-State Circuits, vol. 38, no. 4, pp.654662, Apr. 2003.

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    Parameter Comparison Circuit

    Working Operations

    1. Parameter set

    2. Parameter write

    3. Parameter Compare

    Courtesy: C.S. Lin, J.C. Chang, and B.D. Liu, A low-power Precomputation-based fully parallelcontent-addressable memory, IEEE J. Solid-State Circuits, vol. 38, no. 4, pp.654662, Apr. 2003.

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    Ones CountApproach Analysis

    Courtesy: Shanq-Jang Ruan, Low Power Design of Precomputation Based Content Addressable

    MemoryIEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 16, no. 3,pp. 331-335, March 2008.

    Average Probability= 14Cn/214

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    Block-XOR Approach

    Courtesy: Shanq-Jang Ruan, Low Power Design of Precomputation Based Content Addressable

    MemoryIEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 16, no. 3,pp.331-335, March 2008.

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    Block-XOR Approach Analysis

    Courtesy: Shanq-Jang Ruan, Low Power Design of Precomputation Based Content Addressable

    MemoryIEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 16, no. 3,pp. 331-335, March 2008.

    8 * 8 * 8 * 2

    1024+ 1024/8

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    Experimental Results

    Courtesy: Shanq-Jang Ruan, Low Power Design of Precomputation Based Content AddressableMemoryIEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 16, no. 3,pp. 331-335, March 2008.

    Summary ofPB-CAM Chip

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    Future Scope

    Development of newer and better Parameter Functions

    Architectural and circuit inventions to implement CAMs withRAM like densities

    To look beyond SRAM and implement CAM using

    MRAM

    Nano-RAM using Carbon nanotubes

    Memristor based technology

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    Conclusion

    PB-CAM

    Low Power

    Low Cost

    Low Voltage

    Static Pseudo nMOS Logic word structure

    Block XOR Approach better than Ones Count

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    References

    Shanq-Jang Ruan, Low Power Design of PrecomputationBased Content Addressable MemoryIEEE Transactions onVery Large Scale Integration (VLSI) Systems, vol. 16, no.3,pp. 331-335, Mar. 2008.

    C.S. Lin, J.C. Chang, and B.D. Liu,A low-powerPrecomputation-based fully parallel content-addressablememory,IEEE J. Solid-State Circuits, vol. 38, no. 4,pp.654662, Apr. 2003.

    K. Pagiamtzis and A. Sheikholeslami, Content-addressablememory (CAM) circuits and architectures: A tutorial andsurvey,IEEE J. Solid-State Circuits, vol. 41, no. 3, pp.712727, Mar. 2006.

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    H. Miyatake, M. Tanaka, and Y. Mori, A design for high-speed-low power CMOS fully parallel content-addressablememory macros, IEEE J. Solid-State Circuits, vol. 36, no.6, pp. 956968, Jun. 2001.

    K. J. Schultz, F. Shafai, G. F. R. Gibson, A. G. Bluschke, andD. E. Somppi, Fully parallel 25 MHz, 2.5-Mb CAM, in IEEEInt. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers,1998, pp. 332333.

    Wai-Kai Chen, The VLSI Handbook, chap. 56,ContentAddressable Memory.

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    BACKUP SLIDES

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    NAND Gate Implementation

    Static CMOS Logic Dynamic CMOS Logic

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    Charge sharing

    Qinit = CL * Vdd

    When nmos with input A turns ON,

    Qinit = Qfinal = CL * Vfinal + C1 * Vfinal

    Vfinal = [CL/(CL+C1) ] * Vdd

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    6T SRAM Cell

    6T SRAM Cell Used in most commercial chips

    Data stored in cross-coupled inverters

    Read: Precharge bit, bit_b

    Raise wordline

    Write:

    Drive data onto bit, bit_b Raise wordline

    bit bit_b

    word

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    Static Logic vs. Pseudo-nMOS

    Static Logic includes pull-up and pull-down networks - 2n transistors for n-input

    function.

    Pseudo-nMOS - n+1 transistors for n-input function

    Requires pull-up transistor be weaker than pull-down network (5:1)

    May eliminate p-transistors & possibly long pull-up chains

    Static power dissipation

    weak

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    Advantages & Disadvantage

    The big advantages of dynamic cmos type of logic is thatthe inputs are connected only to NMOS transistors so thatthe input load capacitance is much smaller. Therefore,dynamic logic is faster than static CMOS. Furthermore, forcomplex functions the transistor count is almost halved.

    The big disadvantages of this type of logic is the need forrepeated charging and discharging even when the inputs donot change their state. Therefore, dynamic logic consumesmore power than static CMOS despite the lower transistorcount.

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    Comparison of Parameter Extractors

    Courtesy: Shanq-Jang Ruan, Low Power Design of Precomputation Based Content AddressableMemoryIEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 16, no. 3,pp.

    331-335, March 2008.

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