Semiconductor Quantum Dots IIassets.cambridge.org/97811074/12927/frontmatter/... · Ellen R. Goldman, Hedi Mattoussi, Phan T. Tran, George P. Anderson, and J. Matthew Mauro Synthesis

Semiconductor QuantumDots II

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Cambridge University Press978-1-107-41292-7 - Materials Research Society Symposium Proceedings: Volume 642:Semiconductor Quantum Dots IIEditors: Rosa Leon, Richard Noetzel, Simon Fafard and Diana HuffakerFrontmatterMore information

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MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 642

Semiconductor QuantumDots II

Symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A.

EDITORS:

Rosa LeonJet Propulsion Laboratory

California Institute of TechnologyPasadena, California, U.S.A.

Richard NoetzelEindhoven University of Technology

Eindhoven, The Netherlands

Simon FafardKymata Canada Ltd.

Ontario, Canada

Diana HuffakerUniversity of New Mexico

Albuquerque, New Mexico, U.S.A.

Materials Research SocietyWarrendale, Pennsylvania






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CONTENTS

Preface xiii

Materials Research Society Symposium Proceedings xiv

THEORY, MODELING,AND SIMULA TIONS

A Single-Band Constant-Confining-Potential Model forSelf-Assembled InAs/GaAs Quantum Dots J1.4

M. Califano and P. Harrison

An Analytical Approach for Computing the Energy Structure ofIn As Quantum Dots J1.7

Valeria G. Stoleru, Debdas Pal, and Elias Towe

Simulations of Quantum Confinement in Self-AssembledInAs/GaAs Island Quantum Dot Arrays J1.9

H.T. Johnson, V. Nguyen, and A.F. Bower

Decoherence Effects in Arrays of Coupled Quantum Dots J1.12E. Cota, F. Rojas, and S.E. Ulloa

Quantum Dot Cell Coupled to a Single Mode Quantum Cavity J3.1F. Rojas, E. Cota, and S.E. Ulloa

Atomistic Study of Strain Profiles in Semiconductor Quantum DotStructures J3.2

K. Shintani, H. Sugii, Y. Kikuchi, and M. Kobayashi

Theoretical Analysis of Optical Transitions in GaN-BasedQuantum Dot Structures J3.25

A.D. Andreev and E.P. O'Reilly

Prediction of the Properties of Annealed InAs/GaAs Quantum DotSamples Assuming Conservation of Indium Atoms J3.27

Eric C. Le Ru, Surama Malik, David Childs, and Ray Murray

NANOCRYSTALS, COLLOIDAL DOTS,AND BIOLOGICAL APPLICA TIONS

The Assembly of Nano-Materials Using Bio-Scaffolding J2.3C. Steven Yun, Jody L. Major, and Geoffrey F. Strouse

Quantum-Confined Electron Transitions in CdSe Nanocrystals J2.5D.S. Ginger, A.S. Dhoot, C.E. Finlayson, and N.C. Greenham

v






Bioconjugates of Luminescent CdSe-ZnS Quantum Dots WithEngineered Recombinant Proteins: Novel Self-Assembled Toolsfor Biosensing J2.8

Ellen R. Goldman, Hedi Mattoussi, Phan T. Tran,George P. Anderson, and J. Matthew Mauro

Synthesis of Self-Assembled Metal-Oxide Nanostructures in aDiblock Copolymer Matrix and Integration Onto SemiconductorSurfaces J2.ll

Robert F. Mulligan, Agis A. Iliadis, U. Lee, and Peter Kofinas

The Enhancement of Band Edge Emission From ZnS/Zn(OH)2

Quantum Dots J3.18Hatim Mohamed El-Khair, Ling Xu, Xinfan Huang, Minghai Li,Xiaofeng Gu, and Kunji Chen

Observation of CdSe Colloidal Nano-Dot Films by Scanning ProbeMicroscopy J3.20

Ichiro Tanaka, Eri Kawasaki, O. Ohtsuki, S. Saita, and I. Kamiya

QUANTUM DOT BASED DEVICESAND TRANSPORT STUDIES

* Infrared Photodetection by Semiconductor Quantum-DotNanostructures J4.4

E. Towe and D. Pan

Characteristics of InGaAs/InGaP Quantum Dot InfraredPhotodetector Grown by Metal Organic Chemical VaporDeposition J4.5

Seongsin Kim and M. Razeghi

Field-Effect Structure With Double Layer of InGaAs/GaAsQuantum Dots—A New Concept of Electron Tunneling Device J4.6

Adam Babinski, J.M. Baranowski, R. Leon, and C. Jagadish

Probing the Properties of Self-Organized InGaAs Quantum Dotson GaAs (311)B and (001) by Conductive Atomic ForceMicroscope Tip J4.7

Yoshitaka Okada, Kouichi Akahane, Yoshimasa Iuchi,and Mitsuo Kawabe

Single Electron Transport of a Quantum Dot Formed by SurfaceAcoustic Waves Through a Narrow Channel in a PerpendicularMagnetic Field J4.9

Natalya A. Zimbovskaya and Godfrey Gumbs

* Invited Paper

vi






Many Body Effect in Photo-Conductivity in InAs/GaAsSelf-Assembled Quantum Dots J3.3

Mitsuru Inada, Kazuhiro Ohnishi, Ikurou Umezu,Pablo O. Vaccaro, and Akira Sugimura

InGaAs Quantum Dots Embedded in p-n Junction on GaAs(311)BSubstrate J3.ll

Kouichi Akahane, Haizhi Song, Yoshitaka Okada,and Mitsuo Kawabe

CARRIER DYNAMICS ANDINTERACTIONS, ENERGY RELAXATION,

AND SINGLE DOT SPECTROSCOPY

: Exciton Complexes in Self-Assembled Quantum Dots J5.1M. Bayer, O. Stern, A. Forchel, P. Hawrylak, S. Fafard,K. Hinzer, G. Narvaez, and Z. Wasilewski

Effect of Inter-Dot Electronic Coupling on Laser Gain inInAs/GaAs Quantum Dot Ensemble J5.5

Akira Sugimura, Kazuhiro Ohnishi, Itushi Tadamasa,and Ikurou Umezu

Photoluminescence Mapping of Single InAlAs/AlGaAs QuantumDots in Laser Structures J5.6

K. Hinzer, J. Lapointe, Y. Feng, AJ. SpringThorpe,and S. Fafard

Radiative Decay and Carrier Relaxation in Annealed InAs/GaAsSelf-Assembled Quantum Dots J5.8

Surama Malik, Eric Le Ru, David Childs, and Ray Murray

Radiation Effects in InGaAs/GaAs Quantum Dots: Is There aPhonon Bottleneck After All? J5.9

R. Leon, G.M. Swift, B. Magness, W.A. Taylor, Y.S. Tang,K.L. Wang, P. Dowd, and Y.H. Zhang

Study of Self-Organized InAs/GaAs Quantum Dots byPhotoluminescence and Photo reflectance J3.5

J.S. Hwang, C.C. Chang, W.C. Hwang, G.S. Chang, L.B. Chen,Y.T. Lu, H.H. Lin, and M.C. Chen

Superlinear Dependence of the Photoluminescence FromInAs/GaAs Self-Assembled Quantum Dots J3.28

Eric C. Le Ru, Juliette Fack, and Ray Murray

*Invited Paper

vn






Tuning InAs/GaAs Self-Assembled Quantum Dots to InvestigateRelaxation Processes J3.36

David Childs, Surama Malik, Eric Le Ru, Linda Tjerlund,and Ray Murray

GROWTH ON PATTERNEDSURFACES, ORDERING, AND ALIGNMENT

Improved Uniformity and Carrier Confinement of LateralDot-Like Nanostructures Formed in Triangular-Shaped HoleArrays on Patterned GaAs (311)A J6.2

Richard Notzel, Uwe Jahn, Zhichuan Niu, Hans-Peter Schonherr,and Klaus H. Ploog

Self-Ordering in CdSe/ZnSe, CdSe/(Zn,Mn)Se, InSb/GaSb, andInSb/InAs Quantum Dot Structures and a Novel Type ofQuantum Dot J6.3

Peter Mock, Teya Topuria, Nigel D. Browning,Graham R. Booker, Nigel J. Mason, Robin J. Nicholas,Lubov V. Titova, Malgorzata Dobrowolska, Sanghoon Lee,and Jacek K. Furdyna

Self-Assembled InAs Quantum Dots on Patterned InP Substrates J6.7J. Lefebvre, PJ. Poole, J. Fraser, G.C. Aers, D. Chithrani,and R.L. Williams

Shape, Strain and Spatial Correlation of InP/Ino.48Gao.52PQuantum Dot Multilayers J6.8

M. Schmidbauer, F. Hatami, P. Schafer, M. Hanke,Th. Wiebach, H. Niehus, W.T. Masselink, and R. Kohler

NOVEL MATERIALS, STRUCTURE,AND CHARACTERIZATION TECHNIQUES

Observation of Resonant Tunneling Through InP Quantum DotsUsing Ballistic Electron Emission Microscopy J7.2

Chavva V. Reddy, Venkatesh Narayanamurti, Jae-Hyun Ryou,Uttiya Chowdhury, and Russell D. Dupuis

InAs-InP Coupled Quantum Dot Systems J7.3R.L. Maltez, G. Medeiros-Ribeiro, A.A. Bernussi,W. de Carvalho, and D. Ugarte






* Spontaneous Emission Modification of Isolated InAs QuantumDots in a Three-Dimensional Epitaxial Microcavity J7.5

G.S. Solomon, M. Pelton, and Y. Yamamoto

Photoluminescence Properties of Uniform InGaAs Quantum DotsFabricated by Heterogeneous Droplet Epitaxy J7.6

Takaaki Mano, Shiro Tsukamoto, Nobuyuki Koguchi,Shinichi Watanabe, Masahiro Yoshita, Hidefumi Akiyama,Kanta Ono, and Masaharu Oshima

Optical Spectroscopy of Self-Assembled InP Quantum DotsGrown on GaP Using Gas-Source Molecular Beam Epitaxy J7.7

F. Hatami, W.T. Masselink, and L. Schrottke

Synthesis and Characterization of Metal-SemiconductorNano-Composites J7.8

Scott L. Cumberland and Geoffrey F. Strouse

Spectroscopic Properties of Organic Molecular-Wire/SemiconductorNanocrystalline Superstructures J7.9

Marina Sirota, Edith Minkin, Volker Hensel, Meir Lahav,and Efrat Lifshitz

Optical Investigation of ALMBE Grown InAs Self-AssembledQuantum Dots Embedded in InxGa!_xAs Matrix J3.7

M. Geddo, G. Guizzetti, M. Patrini, R. Pezzuto, S. Franchi,P. Frigeri, and G. Trevisi

InAs Quantum Dots Grown on an AlGaAsSb Strain-Relief Buffer J3.22A.L. Gray, L.R. Dawson, Y. Lin, A. Stintz, Y.-C. Xin,A.A. Garza, and L.F. Lester

Vertical Stacks of InAs Quantum Dots Embedded IntoShort-Period AlAs/GaAs Superlattice J3.30

Serge Oktyabrsky, V. Tokranov, M. Yakimov, A. Katsnelson,and K. Dovidenko

Self-Assembled InNAs/GaAs Quantum Dots: The Role of NitrogenIncorporation J3.33

P. Ballet, P. Gilet, L. Grenouillet, P. Duvaut, G. Feuillet,and A. Million

Strong Nano-Scale Phase Separation Effects in the OpticalSpectra of Semiconductor Alloys J3.34

A.M. Mintairov, J.L. Merz, A.S. Vlasov, V.P. Khvostikov,Yu.G. Musikhin, and S. Raymond

* Invited Paper

ix






MOCVD GaSb/GaAs Quantum Dots J3.35Motlan and E.M. Goldys

STRUCTURAL CHARACTERIZATION

Z-Contrast Scanning Transmission Electron Microscopy onSelf-Assembled CdSe Quantum Dots in ZnSe and (Zn,Mn)SeMatrices J8.3

Teya Topuria, Peter Mock, Nigel D. Browning,Lubov V. Titova, Malgorzata Dobrowolska, Sanghoon Lee,and Jacek K. Furdyna

* Structural Characterization of InAs/GaAs and InAs/InPQuantum Dots by Transmission Electron Microscopy J8.5

John P. McCaffrey, Michael D. Robertson, Phillip Poole,Zbig R. Wasilewski, Bruno Riel, Robin Williams,and Simon Fafard

High Resolution Analysis of Embedded Quantum Dots J8.8AJ. Harvey, HJ. Davock, D. Zhi, J.G. Zheng, and PJ. Goodhew

Electron Microscopy Study of ZnTe/CdTe Superlattice With HighDensity of Quantum Dots J3.8

S. Kret, P. Dluzewski, E. Sobczak, A. Szczepanska,S. Mackowski, T. Wojtowicz, G. Karczewski, J. Kossut,and P. Ruterana

GROWTH STUDIES ANDPOST-GROWTH PROCESSING

Effect of Growth Rate and Coverage on the Composition andOptical Properties of InAs/GaAs Self-Assembled Quantum Dots J9.2

Peter B. Joyce, Tomasz J. Krzyzewski, Gavin R. Bell,Eric C. Le Ru, Ray Murray, and Tim S. Jones

Luminescence Enhancement by Hydrogen Passivation inInAs/GaAs Self-Assembled Quantum Dots J9.4

Eric C. Le Ru, Philip D. Siverns, and Ray Murray

Effects of Post-Annealing on Photoluminescence Properties ofGaAs Quantum Dots Grown by Droplet Epitaxy J9.5

Katsuyuki Watanabe, Shiro Tsukamoto, Yasutaka Imanaka,Tadashi Takamasu, Giyu Kido, Yoshihiko Gotoh,Nobuyuki Koguchi, Masahiro Yoshita, Shinichi Watanabe,and Hidefumi Akiyama

•Invited Paper

x






Tuning of the Electronic Properties of Self-Assembled InAs/InPQuantum Dots by Rapid Thermal Annealing J9.6

S. Raymond, D. Labrie, J.-F. Girard, S. Poirier,S. Awirothananon, PJ. Poole, H. Marchand, P. Desjardins,and R.A. Masut

MEE-Grown InGaAs Quantum Dots Embedded in an InxGalxAs(x £ 0.2) Matrix for 1.3 Jim Emission J9.8

Sridhar Govindaraju, Rubin Sidhu, and Archie L. Holmes, Jr.

Photoluminescence Temperature and Polarization DependentStudies of In As Quantum Dots Grown on InP(OOl) by MBE J9.9

J. Olivares, B. Salem, T. Benyattou, G. Bremond, J. Brault,M. Gendry, G. Hollinger, O. Marty, and M. Pitaval

Effects of Spacer Thickness on the Performance of InGaAs/GaAsQuantum Dot Lasers J3.21

Nien-Tze Yeh, Wei-Shen Liu, Shu-Han Chen, and Jen-Inn Chyi

Effects of Annealing on Self-Assembled In As Quantum Dots andWetting Layer in GaAs Matrix J3.39

J. Jasinski, A. Babinski, R. Bozek, A. Szepielow,and J.M. Baranowski

Author Index

Subject Index











PREFACE

The second MRS symposium on "Semiconductor Quantum Dots" was held November 27-30at the 2000 MRS Fall Meeting in Boston, Massachusetts. 123 papers were presented in ninesessions, including a large poster session. The sessions were well attended and the discussionswere lively.

The presentations during this four-day symposium highlighted the high level ofinternational interest and effort to understand and control the properties of semiconductorquantum dot structures and devices. A significant portion of the symposium addressed the self-assembled (self-forming) type of quantum dots that results from the islanding transition instrained heteroepitaxy of III-V semiconductors; however, there was a whole session devoted tonanocrystals, colloidal dots and biological applications, and there were also presentations basedon etched or ex situ processed quantum dots. Attendees heard discussions of modeling andsimulation of quantum dots, growth, structural characterization, transport studies, carrierdynamics, energy relaxation, single dot spectroscopy, several device applications for quantumdots, growth on patterned surfaces and ordering, novel materials and characterizationtechniques, and post-growth processing. Materials used in quantum dot applications and basicresearch included the now well-known InAs/GaAs dots, but it also encompassed other quantumdot materials formed by the Stranski-Krastanow growth transformation like InGaAs/InGaP,GaSb/GaAs, GalnNGa/GaAs and InAs/InP; as well as colloidal dots and/or nanocrystals made ofCdS, CdSe/ZnS, ZnO/AIN, ZnTe/CdTe, MoS, PbSe, TiO2 and SbO2, to name a fewrepresentative materials.

Technological applications ranged over quantum dot laser diodes, quantum dot opticalamplifiers, biosensing applications, infrared photodetectors, photovoltaic devices, quantumcellular automata, and magnetic semiconductors. Novel devices and devices in non-conventional quantum dot materials included the reported development by researchers at theJohannes Kepler University in Linz, Austria of a mid infrared vertical cavity surface emittingquantum dot (QD) using the lead salt compounds PbSe and PbEuTe; optical gain and stimulatedemission in colloidal quantum dots reported by researchers at Los Alamos National Laboratory;and the use of quantum dots for optical amplifiers reported by researchers at the NationalInstitute of Standards and Technology in Boulder, Colorado.

Session chairs included: Laurence Eaves, Ulrike Woggon, Dennis Deppe, Glenn Solomon,Manfred Bayer, Gunther Springholz, Rich Mirin, Denis Morris, and Victor Klimov. Theorganizers gratefully acknowledge their contribution.

The symposium organizers, proceedings editor, and the Materials Research Societygratefully acknowledge the support provided by MMR Technologies, Inc.

Rosa LeonRichard NoetzelSimon FafardDiana Huffaker

December, 2000






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 609— Amorphous and Heterogeneous Silicon Thin Films—2000, R.W. Collins, H.M. Branz,M. Stutzmann, S. Guha, H. Okamoto, 2001, ISBN: 1-55899-517-X

Volume 610— Si Front-End Processing—Physics and Technology of Dopant-Defect Interactions II, A. Agarwal,L. Pelaz, H-H. Vuong, P. Packan, M. Kase, 2001, ISBN: 1-55899-518-8

Volume 611— Gate Stack and Silicide Issues in Silicon Processing, L.A. Clevenger, S.A. Campbell, P.R. Besser,S.B. Herner, J. Kittl, 2001, ISBN: 1-55899-519-6

Volume 612— Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics,G.S. Oehrlein, K. Maex, Y-C. Joo, S. Ogawa, J.T. Wetzel, 2001, ISBN: 1-55899-520-X

Volume 613— Chemical-Mechanical Polishing 2000—Fundamentals and Materials Issues, R.K. Singh, R. Bajaj,M. Moinpour, M. Meuris, 2001, ISBN: 1-55899-521-8

Volume 614— Magnetic Materials, Structures and Processing for Information Storage, B.J. Daniels, T.P. Nolan,M.A. Seigler, S.X. Wang, C.B. Murray, 2001, ISBN: 1-55899-522-6

Volume 615— Polycrystalline Metal and Magnetic Thin Films—2001, B.M. Clemens, L. Gignac, J.M. MacLaren,O. Thomas, 2001, ISBN: 1-55899-523-4

Volume 616— New Methods, Mechanisms and Models of Vapor Deposition, H.N.G. Wadley, G.H. Gilmer,W.G. Barker, 2000, ISBN: 1-55899-524-2

Volume 617— Laser-Solid Interactions for Materials Processing, D. Kumar, D.P. Norton, C.B. Lee, K. Ebihara,X.X. Xi, 2001, ISBN: 1-55899-525-0

Volume 618— Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films,J.M. Millunchick, A-L. Barabasi, N.A. Modine, E.D. Jones, 2000, ISBN: 1-55899-526-9

Volume 619— Recent Developments in Oxide and Metal Epitaxy—Theory and Experiment, M. Yeadon,S. Chiang, R.F.C. Farrow, J.W. Evans, O. Auciello, 2000, ISBN: 1-55899-527-7

Volume 620— Morphology and Dynamics of Crystal Surfaces in Complex Molecular Systems, J. DeYoreo,W. Casey, A. Malkin, E. Viieg, M. Ward, 2001, ISBN: 1-55899-528-5

Volume 621— Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays, K.L. Jensen,RJ. Nemanich, P. Holloway, T. Trottier, W. Mackie, D. Temple, J. Itoh, 2001,ISBN: 1-55899-529-3

Volume 622— Wide-Bandgap Electronic Devices, R.J. Shul, F. Ren, W. Pletschen, M. Murakami, 2001,ISBN: 1-55899-530-7

Volume 623— Materials Science of Novel Oxide-Based Electronics, D.S. Ginley, J.D. Perkins, H. Kawazoe,D.M. Newns, A.B. Kozyrev, 2000, ISBN: 1-55899-531-5

Volume 624— Materials Development for Direct Write Technologies, D.B. Chrisey, D.R. Gamota, H. Helvajian,D.P. Taylor, 2001, ISBN: 1-55899-532-3

Volume 625— Solid Freeform and Additive Fabrication—2000, S.C. Danforth, D. Dimos, F.B. Prinz, 2000,ISBN: 1-55899-533-1

Volume 626— Thermoelectric Materials 2000—The Next Generation Materials for Small-Scale Refrigerationand Power Generation Applications, T.M. Tritt, G.S. Nolas, G.D. Mahan, D. Mandrus,M.G. Kanatzidis, 2001, ISBN: 1-55899-534-X

Volume 627— The Granular State, S. Sen, M.L. Hunt, 2001, ISBN: 1-55899-535-8Volume 628— Organic/Inorganic Hybrid Materials—2000, R. Laine, C. Sanchez, C.J. Brinker, E. Giannelis,

2001, ISBN: 1-55899-536-6Volume 629— Interfaces, Adhesion and Processing in Polymer Systems, S.H. Anastasiadis, A. Karim,

G.S. Ferguson, 2001, ISBN: 1-55899-537-4Volume 633— Nanotubes and Related Materials, A.M. Rao, 2001, ISBN: 1-55899-543-9Volume 634— Structure and Mechanical Properties of Nanophase Materials—Theory and Computer Simulations

vs. Experiment, D. Farkas, H. Kung, M. Mayo, H. Van Swygenhoven, J. Weertman, 2001,ISBN: 1-55899-544-7

Volume 635— Anisotropic Nanoparticles—Synthesis, Characterization and Applications, S.J. Stranick, P. Searson,L.A. Lyon, CD. Keating, 2001, ISBN: 1-55899-545-5

Volume 636— Nonlithographic and Lithographic Methods of Nanofabrication—From Ultralarge-Scale Integrationto Photonics to Molecular Electronics, L. Merhari, J.A. Rogers, A. Karim, D.J. Norris, Y. Xia,2001, ISBN: 1-55899-546-3






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 637— Microphotonics—Materials, Physics and Applications, K. Wada, P. Wiltzius, T.F. Krauss,K. Asakawa, E.L. Thomas, 2001, ISBN: 1-55899-547-1

Volume 638— Microcrystalline and Nanocrystalline Semiconductors—2000, P.M. Fauchet, J.M. Buriak,L.T. Canham, N. Koshida, B.E. White, Jr., 2001, ISBN: 1-55899-548-X

Volume 639— GaN and Related Alloys—2000, U. Mishra, M.S. Shur, C M . Wetzel, B. Gil, K. Kishino, 2001,ISBN: 1-55899-549-8

Volume 640— Silicon Carbide—Materials, Processing and Devices, A.K. Agarwal, J.A. Cooper, Jr., E. Janzen,M. Skowronski, 2001, ISBN: 1-55899-550-1

Volume 642— Semiconductor Quantum Dots II, R. Leon, S. Fafard, D. Huffaker, R. Notzel, 2001,ISBN: 1-55899-552-8

Volume 643— Quasicyrstals—Preparation, Properties and Applications, E. Belin-Ferre\ P.A. Thiel, A-P. Tsai,K. Urban, 2001, ISBN: 1-55899-553-6

Volume 644— Supercooled Liquid, Bulk Glassy and Nanocrystalline States of Alloys, A. Inoue, A.R. Yavari,W.L. Johnson, R.H. Dauskardt, 2001, ISBN: 1-55899-554-4

Volume 646— High-Temperature Ordered Intermetallic Alloys IX, J.H. Schneibel, S. Hanada, K.J. Hemker,R.D. Noebe, G. Sauthoff, 2001, ISBN: 1-55899-556-0

Volume 647— Ion Beam Synthesis and Processing of Advanced Materials, D.B. Poker, S.C. Moss, K-H. Heinig,2001, ISBN: 1-55899-557-9

Volume 648— Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures,S.C. Moss, 2001, ISBN: 1-55899-558-7

Volume 649— Fundamentals of Nanoindentation and Nanotribology II, S.P. Baker, R.F. Cook, S.G. Corcoran,N.R. Moody, 2001, ISBN: 1-55899-559-5

Volume 650— Microstructural Processes in Irradiated Materials—2000, G.E. Lucas, L. Snead, M.A. Kirk, Jr.,R.G. Elliman, 2001, ISBN: 1-55899-560-9

Volume 651— Dynamics in Small Confining Systems V, J.M. Drake, J. Klafter, P. Levitz, R.M. Overney,M. Urbakh, 2001, ISBN: 1-55899-561-7

Volume 652— Influences of Interface and Dislocation Behavior on Microstructure Evolution, M. Aindow, M. Asta,M.V. Glazov, D.L. Medlin, A.D. Rollet, M. Zaiser, 2001, ISBN: 1-55899-562-5

Volume 653— Multiscale Modeling of Materials—2000, L.P. Kubin, J.L. Bassani, K. Cho, H. Gao,R.L.B. Selinger, 2001, ISBN: 1-55899-563-3

Volume 654— Structure-Property Relationships of Oxide Surfaces and Interfaces, C.B. Carter, X. Pan, K. Sickafus,H.L. Tuller, T. Wood, 2001, ISBN: 1-55899-564-1

Volume 655— Ferroelectric Thin Films IX, P.C. Mclntyre, S.R. Gilbert, M. Miyasaka, R.W. Schwartz,D. Wouters, 2001, ISBN: 1-55899-565-X

Volume 657— Materials Science of Microelectromechanical Systems (MEMS) Devices III, M. deBoer, M. Judy,H. Kahn, S.M. Spearing, 2001, ISBN: 1-55899-567-6

Volume 658— Solid-State Chemistry of Inorganic Materials III, M.J. Geselbracht, J.E. Greedan, D.C. Johnson,M.A. Subramanian, 2001, ISBN: 1-55899-568-4

Volume 659— High-Temperature Superconductors—Crystal Chemistry, Processing and Properties,U. Balachandran, H.C. Freyhardt, T. Izumi, D.C. Larbalestier, 2001, ISBN: 1-55899-569-2

Volume 660— Organic Electronic and Photonic Materials and Devices, S.C. Moss, 2001, ISBN: 1-55899-570-6Volume 661— Filled and Nanocomposite Polymer Materials, A.I. Nakatani, R.P. Hjelm, M. Gerspacher,

R. Krishnamoorti, 2001, ISBN: 1-55899-571-4Volume 662— Biomaterials for Drug Delivery and Tissue Engineering, S. Mallapragada, R. Korsmeyer,

E. Mathiowitz, B. Narasimhan, M. Tracy, 2001, ISBN: 1-55899-572-2

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






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Semiconductor Quantum Dots IIassets.cambridge.org/97811074/12927/frontmatter/... · Ellen R. Goldman, Hedi Mattoussi, Phan T. Tran, George P. Anderson, and J. Matthew Mauro Synthesis