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CVD Diamond based Active Devices. Paolo Calvani. S 2 DEL. DiaC 2 Lab (Diamond & Carbon Compounds Lab) IMIP - CNR - Montelibretti (RM). S 2 DEL Solid State and Diamond Electronics Lab Università degli Studi “Roma Tre”. Daniele M. Trucchi Paolo Calvani Alessandro Bellucci Emilia Cappelli - PowerPoint PPT Presentation
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4th,
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
S2DELSolid State and Diamond Electronics Lab
Università degli Studi “Roma Tre”
CVD Diamond based Active Devices
S2DEL
DiaC2Lab(Diamond & Carbon Compounds Lab)
IMIP - CNR - Montelibretti (RM)
Paolo Calvani
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
Daniele M. TrucchiPaolo Calvani
Alessandro BellucciEmilia Cappelli
Stefano Orlando
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
Mechanical Applications
Electronic Applications
1989-1995 Study of Nucleation and Growth Mechanisms of CVD Diamond
1995-1999 CVD Diamond protective coatings of cutting toolsCoordination of MURST-CNR 5% Project
2003-2006 Development of high-tech materials and ceramic coatings ENEA-MIUR “PROMOMAT” Strategic Project
1999-2001 Secondary electron emission amplifiers for scanning electron microscopyMADESS II Applied Research Project
2000-2002 VUV & DUV Radiation Detectors in collaboration with S2DEL – Univ. Roma Tre
ASI ARS1/R07/01 Aerospace Project
2001-2005 Poly-Diamond Radiation Dosimeters for Radiation Therapy Coordination of European Project “DIAMOND” G5RD-CT01-00603
2003-2007 Nanostructured Carbon and graphene Structures for Opto-Electronic applications
FIRB Project “Micro & Nanocarbon” & FISR Project “High Density Memories”
2008-2010 Systems for direct nuclear-to-electric energy conversionCoordination of CNR-RSTL “ECO-Diamond” Project
2008-today Development of Single-Crystal Diamond dosimeters in collaboration with S2DEL - Univ. Roma Tre
2010-2013 Thermionic-thermoelectric conversion module for solar concentrated systems
E2PHEST2US Project
CNR-IMIP: Know-How & Projects
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
Material Production
~
Hot FilamentCVD for diamond film deposition
Microwave CVD for diamond (doped) film deposition
Technological Processes for
Device Fabrication
Characterization of Chemical-Physical
Properties
Characterization of Device Performance
Spectral Photometry
Raman & IR
Pulsed laser (Excimer &
Nd:YAG) ablation for
(nanostructured) thin-film
deposition of carbon, carbides, refractory metals
RF Sputtering for deposition of
metals Ti, Al, Cr, …
SEM & EDS
AFM
Microscopy
Spectroscopy
MW-CVD for surface hydrogen
termination
Four-Point Probe under
vacuum,T=25-400 °C
X-Ray Photoconducti
vity Setup
Secondary Electron Emission
Characterization Setup
Vacuum & Temperature Electronic
Characterization (VTEC) (10-9 Torr, T=77-1200
K) for Thermionic Emission
Seebeck Effect Measurement System
for Thermoelectric Characterization
Spectral (UV-Vis-NIR)
Photoconductivity Setup
CNR-IMIP: Facilities
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
Material
Band gap
Thermal conductivity
Breakdown electric field
Eb
MobilityCarriers
sat. velocity vsat
Dielectric constant
εr
eV W/cmK 106 V/cm cm2/Vs 107 cm/s -
Diamond 5.5 20 102000 -
h1.0 5.7
Gallium nitride 3.4 1.5 2.5 2000 2.5 8.9
Silicon carbide 3.27 4.9 3.0 1000 2.0 9.7
Gallium Arsenide 1.42 0.55 0.4 8500 1.29 12.9
Silicon 1.12 1.5 0.3 1400 1.0 11.8
Germanium 0.67 0.58 0.1 3900 1.0 16.2
5
High Frequency – High Power Field Effect Transistors
UV Power Switches
Renewable Energies Conversion Stages
Diamond Electronic Properties
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
Plasma assisted Hydrogen termination of CVD Diamond induces p-type conductive channel
6
Evolution of the band bending, activated by air exposure, during the electron transfer process at the
interface between diamond and water layer[b]: density-of-states (DOS) is changing from 3D to 2D: 2DHG
S2DEL
High Frequency – High PowerField Effect Transistors
Fabricated by S2DEL and IFN-CNR
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
Channel conductance is always positive.
No self heating effects!
Maximum VDS applied=80 VEapplied= 2 MV/cm
RF Power Characterization by Politecnico di Torino
CLASS A @ 2GHzPout=0.2 W/mm
Gain=8 dBPAE=21.3%
Pout @ 1GHz ~ 0.8 W/mm[a]
Best result for Polycrystalline Diamond
LG=200nm, WG=50umVDS=-14 V, VGS=-0.3 VfMAX = 15.2 GHzft = 6.2 GHz
S2DEL
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
-20 dB/dec.
VGS=-0.2 V, VDS=-10 V
Gain = 15 dB@ 1 GHz
Gain = 15 dB@ 1 GHz
Eapplied= 0.5 MV/cm
WG=25 μm Wg=50 μm
fMAX =26.3 GHzfMAX =26.3 GHz
fT = 13.2 GHz
fT = 13.2 GHz
Gain = 22 dB @ 1 GHz
Gain = 22 dB @ 1 GHz
fMAX = 23.7 GHz
fT = 6.9 GHz
Polycrystalline DiamondPolyD4 by Russian Academy of Sciences
Single Crystal DiamondP7MS by Russian Academy of Sciences
LG=0.2 μmS2DEL
RF Small Signal Characterization in collaboration with by Tor Vergata University
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
-20 dB/dec.
Lg=0.2 μm, Wg=25 μmVGS=0.0 V, VDS=-35 V
Gain =16 dB @1GHz
fMAX = 35 GHz
fT = 10 GHz Eapplied= 1.75 MV/cm
Polycrystalline Diamond PolyD4 by Russian Academy of Sciences
S2DEL
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
S2DEL
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
0,0
0,2
0,4
0,6
0,8
1,0
-5 10-9
0 5 10-9
1 10-8
1,5 10-8
2 10-8
Nor
mal
ized
sig
nal
Time (ns)
DUT
50 Oscilloscope input resistance
Lecroy WavePro 9602 GHz 16Gs/s
digital oscilloscope
Picosecond 5550B18 GHz Bias teeVDS
=193 nm
Si diode(for trigger)
Neweks PSX 100 excimer laserFilled with ArF gas mixture
x
Laser pulse shaperecorded by
vacuum phototube
GPIB
VGS(Keithley 617)
S2DELUV POWER SWITCHES
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
-5 10-1
0
5 10-1
1 100
1,5 100
2 100
-10 0 10 20 30
Time (ns)
VGS
=-10.0 V
VGS
=-8.6 V
VGS
=-7.0 V
VGS
=-5.0 V
VGS
=-2.5 V
VGS
=+1.0 V
VGS
=0.0 V
Dra
in-Sou
rce
Phot
ogen
erat
ed V
olta
ge (
V)
VDS=-9.6 V
12/23
-2 10-1
-1 10-1
0
1 10-1
2 10-1
3 10-1
4 10-1
5 10-1
6 10-1
-10 0 10 20 30
Time (ns)
VDS
=-6.0 V
VDS
=-5.0 V
VDS
=-4.0 V
VDS
=-3.0 V
VDS
=-2.5 VV
DS=-0.5 V
VDS
=-0.0 V
Dra
in-Sou
rce
Phot
ogen
erat
ed V
olta
ge (
V)
VGS=-3.4 V
Source DrainG
diamond
UV generated
carriers
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
-0,01
0
0,01
0,02
0,03
0,04
0,05
0,06
0,07
0 0,02 0,04 0,06 0,08
Peak
Am
plit
ude
(V)
VDD
(V)
13/23
Source DrainG
diamond
UV generated
carriers
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
EU Project E2PHEST2US’
Partners:•CNR (Italy, Scientific Coordination)
•CRR (Italy, Management Coordination)•SHAP (Italy)
•Tel Aviv University (Israel)•Tubitak (Turkey)
•Prysmian (Multinational Industry)•Maya (San Marino)
Duration: 3 years (Jan 2010 - Jan 2013)•Total Project Cost: 2.68 M€•Total EU Funding: 1.98 M€
*For details, http://www.ephestus.eu
Renewable Energies Conversion Stage
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
EU Project E2PHEST2US’
Rload
n
p
n
p
n
p
Rload
TR (700-1000 °C)
TE
TC (250-400 °C)
TTE
TAmb
Radiation
Absorber
Thermionic Emitter
Thermionic Stage Load
Inter-electrode Space (<1 mm)
Collector Thermoelectric Stage Load
Thermoelectric Stage
Final Thermal Stage
Concentrated Solar
Radiation(400 – 1000
suns)
Development of:
•A radiation absorber made of ceramic materials able to work stably at high temperature (700 - 1000 °C)
•A thermionic conversion stage with CVD diamond as the active material
•A thermoelectric conversion stage constituted by high Seebeck coefficient materials
•Maximum theoretical efficiency ≈ 30%
T
z
UnderVacuum
*For details, http://www.ephestus.eu
Via
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AEN
June 2
4th,
20
11
Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
S2DELSolid State and Diamond Electronics Lab
Università degli Studi “Roma Tre”
CVD Diamond based Active Devices
S2DEL
DiaC2Lab(Diamond & Carbon Compounds Lab)
IMIP - CNR - Montelibretti (RM)
Thanks for the attention
Via
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June 2
4th,
20
11
Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
Via
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4th,
20
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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza
Alternative Technology in Concentrating Systems•Multi-junction Photovoltaic Cells
•Thermodynamic Conversion by Heat Engines (Stirling, Rankine)
•Highly Expensive
•Mandatory Need of Cooling (Conversion Efficiency Exponentially Decreases with Temperature)
•Illumination Local Inhomogeneities Causes Output Bottlenecks
•Production Dependent on Semiconductor Industry (Few Large-Scale World Suppliers)
Nominal Conversion Efficiency of 30%
Compactness
No mechanical parts in movement
•Nominal Conversion Efficiency of 35% at High Temperatures (> 600 °C)
•Not Compact System
•Mechanical Parts in Movement (Degradation with Operative Time)
•Economically Reasonable for Large Plants (> 10 kWe)