Root-Cause Failure Analysis of Electronics - · PDF fileUniversity of Maryland Center for Advanced Life Cycle Engineering Engineering University of Maryland Center for Advanced Life

University of MarylandCopyright © 2013

1Center for Advanced Life Cycle Engineering [email protected]

Root-Cause Failure Analysis of Electronics

Bhanu SoodTest Services and Failure Analysis (TSFA) Laboratory

Center for Advanced Life Cycle Engineering (CALCE) University of Maryland

College Park, MD 20742

SMTA Philadelphia, March 14, 2013

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Replication rights of all information is retained by individual presenters, their respective organizations and CALCE.

Copyright © 2013 CALCE and the University of Maryland. All rights reserved.



What are the Biggest Headaches?

Other Sites 7%Connectors 3%Interconnects/

Solder Joints 13%

PEM 21%Printed Board 26%

Capacitors 30%

• CALCE Laboratory Services reviewed 150 root-cause analyses of failures during qualification or at a customer site– Representative of over 80

different companies.

• These failures were categorized by failure site– PCB and capacitor issues

accounted for over 50% of these failures.



Where there are Failures… There Are Costs . . .• Costs to the Manufacturer

o Time-to-market can increase o Warranty costs can increaseo Market share can decrease. Failures can stain the

reputation of a company, and deter new customers.o Claims for damages caused by product failure can increase

• Costs to the Customero Personal injuryo Loss of mission, service or capacityo Cost of repair or replacement o Indirect costs, such as increase in insurance, damage to

reputation, loss of market share



What is the Cost of Failure?*Type of Business Lost Revenue per Hour

Retail Brokerages $6,450,000Credit Card Sales Authorization $2,600,000Home Shopping Channels $113,750Catalog Sales Centers $90,000Airline Reservation Centers $89,500Cellular Service Activations $41,000Package Shipping Services $28,250Online Network Connect Fees $22,250ATM Service Fees $14,500Supermarkets $10,000

* - 1999 dollarsUniversity of Maryland

Copyright © 20135Center for Advanced Life Cycle Engineering [email protected]

301-405-3498

Outline

• Definitions• Root cause failure analysis

– RCA Steps • Case Studies• Closing remarks



Failure Analysis



Failure DefinitionsFailure A product no longer performs the function for which it

was intended

Failure Mode The effect by which a failure is observed.

Failure Site The location of the failure.

Failure Mechanism The physical, chemical, thermodynamic or other process that results in failure.

Failure Model Quantitative relationship between lifetime or probability of failure and loads

Load Application/environmental condition needed (electrical, thermal, mechanical, chemical...) to precipitate a failure mechanism.



Classification of Failures

• It is helpful to distinguish between two key classes of failure mechanism:– overstress: use conditions exceed strength of materials; often

sudden and catastrophic– wearout: accumulation of damage with extended usage or repeated

stress

• It is also helpful to recognize early life failures:– infant mortality: failures occurring early in expected life; should be

eliminated through process control, part selection and management, and quality improvement procedures



Failure Mechanism Identification

Overstress Mechanisms Wearout Mechanisms

Mechanical

Thermal

Electrical

Radiation

Chemical

Mechanical

Electrical

Radiation

Chemical

Yield, Fracture,Interfacial de-adhesion

Glass transition (Tg)Phase transition

Dielectric breakdown,Electrical overstress,

Electrostatic discharge,Second breakdown

Single event upset

Contamination

Fatigue,Creep, Wear

TDDB, Electromigration,Surface charge

spreading, Hot electrons, CAF, Slow trapping

Radiation embrittlement,Charge trapping in

oxides

Corrosion,Dendrite growth,

Depolymerization,Intermetallic Growth

ThermalStress driven diffusion

voiding (SDDV)



What Causes Products to Fail?• Generally, failures do not “just happen.”• Failures may arise during any of the following stages of a

product’s life cycle:

The damage (failure mode) may not be detected until a later phase of the life cycle.



Root Cause analysis has four major objectives:• Verify that a failure occurred;• Determine the symptom or the apparent way a part has failed

(the mode);• Determine the mechanism and root cause of the failure;• Recommend corrective and preventative action.

While generally synonymous, “Failure analysis” is commonly understood to include all of this except determination of root cause.

What is Root Cause Analysis?



What is a Root Cause

The root cause is the most basic causal factor or factors that, if corrected or removed, will prevent the recurrence of the situation.*

The purpose of determining the root cause (s) is to fix the problem at its most basic source so it doesn’t occur again, even in other products, as opposed to merely fixing a failure symptom. Identifying root causes is the key to preventing similar occurrences in the future.

* ABS Group, Inc., Root Cause Analysis Handbook, A Guide to Effective Incident Investigation, ABS Group, Inc., Risk & Reliability Division,

Rockville, MD, 1999.



Root Cause Analysis is Different from Troubleshooting

• Troubleshooting is generally employed to eliminate a symptom in a given product, or to identify a failed component in order to effect a repair.

• Root cause analysis is dedicated to finding the fundamental reason why the problem occurred in the first place, to prevent future failures.



From Symptoms to Root Causes• Symptoms are manifestations of a problem; signs indicating

that a failure exists.– Example: a symptom of printed circuit board failure could be the

measurement of open circuits after fabrication.

• An apparent cause (or immediately visible cause)is the superficial reason for the failure. – Example: the apparent cause of open circuits could be that traces

have discontinuities which result in open circuits.

• Root Cause is the most basic casual factor(s).– Example: the root cause could arise during the manufacturing

process if the circuit boards are stacked improperly, resulting in scratches to circuit traces. Another possible root cause could be the presence of contaminants during the copper trace etching process, which resulted in discontinuities in the traces.



Root Cause Analysis

• Root cause analysis is a methodology designed to help:

1) Describe WHAT happened during a particular occurrence,2) Determine HOW it happened, and3) Understand WHY it happened.

• Only when one is able to determine WHY an event or failure occurred, will one be able to determine corrective measures, andover time, the root causes identified can be used to target major opportunities for improvement.

• Uncovering ROOT CAUSE may require 7 iterations of “Why?”



Preplanning: Establish Root Cause Culture with Management Support and Responsibilities

Alert / Notification : Begin Investigation Secure evidence (data collection) Assess immediate cause(s) Interview witnesses

Analyze and Interpret EvidenceConduct physical evaluation (core of the FA process)

Review documents and procedures, and check against standards

Validate hypotheses

Hypothesize causes using tools such as Ishikawa (fishbone) diagram, and failure modes, mechanisms, and effects analysis (FMMEA)

Identify Root Cause (s)

Identify Restart Criteria

Develop Corrective Actions

Conduct a Follow-up Audit, Confirm Effectiveness, then Critique and Modify Process

Trained investigation team Analysis procedures

Policy/procedures for notification Classification system

Implement Corrective Actions and/or Document

Resolutions

Root Cause Analysis Process

TheIncident!

Hypothesization Tools Risk Analysis



PeopleFootwear

Scaling

CDs

Shape

SizeElectricalProperties

LeadFrame

Process ProblemRecognition

CommitmentTraining

Discipline

Package

PackagedWafer

Die

HandlingFriction

Material

MaterialsEnergy

Sources

SprayTools

Ovens

Brushes Blowers

Furniture

GroundingTools

FloorsLayout

Clothes

Humidity

Material

ProtectiveStructures

Testing

Geometry

WaferProcessing

Assembly

Management

Handling

Carriers

Systems

EquipmentType

Temperature

WorkArea

AirFlow

MANUFACTURING

ELECTROSTATICDISCHARGE

DESIGN

PRODUCTIONTOOLS

WAFERENVIRONMENT

A Cause and Effect Diagram - Electrostatic Discharge in a Semiconductor Device -



A Cause and Effect Diagram - PCBA Delamination -

Delamination

MaterialEpoxy Resin

SystemHardener

BinderAccelerator

HumidityPre-preg

Reinforce Material

Copper Sheet

Soldermask

Dimensions

Properties

CTEQuality

Design

No. of layers

CopperThickness Epoxy/Resin

System

OperatingConditions

AssemblyProcess

LifeCycle Stack up

Sequence

Pre-preg

Warpage

Specs

Assembly Process/Method

Pressuretime

TemperatureCuring Temp

timeStacking up

Method

Warpage

Bow & Twist Blank

BookingMetallization

time method

temperatureReflowprofile

No. of passes

alloy

WaveSolder

ProfileCooling Rate

Man

Training

Certification Knowledge

Ability Handling

OJT

Working Instructions



General Approach Used for Failure Analysis

• The overriding principle of failure analysis is to start with the least destructive methods and progress to increasingly more destructive techniques.

• The potential for a nominally non-destructive technique to cause irreversible changes should not be underestimated.– For example, the simple act of handling a sample, or measuring a

resistance, can cause permanent changes that could complicate analysis further down the line.

• Each sample and failure incidence may require a unique sequence of steps for failure analysis. The process demands an open mind, attention to detail, and a methodical approach.



Example of Failure Analysis Process FlowOccurrence of

Failure

Preservation of Failure

Non-Destructive Analysis of Failure

Electrical Test/Verification of Failure/

Classification of Failure ModeReliability Test/Simulation of

Failure Circumstances

Deprocessing (Destructive Physical Analysis

In-Circuit Evaluation

Identification of Failure Site

Physical Analysis

Hypothesis of Failure Mechanism

Root Cause Determination Corrective Action

Investigation of FailureOccurrence Circumstances

Intermittent

Verification &Documentation



Non-Destructive Testing (NDT)• Visual Inspection• Optical Microscopy• X-ray imaging• X-ray Fluorescence Spectroscopy

• Acoustic microscopy• Hermeticity



External Inspection

• Visual inspection of external condition– differences from good samples

• Detailed inspection: appearance, composition,damage, contamination, migration, abnormalities– Low power microscope– High power microscope– Scanning electron microscope– Surface chemical analysis



Electrical Testing

• Electrical characteristics/performance• DC test• Parametrics (current-voltage characteristic)• Simulated usage conditions• Electrical probing



Fault Isolation

• Electrical Probing• Time Domain Reflectometry (TDR)• Electron Beam Testing

– electron beam induced current (EBIC), – voltage contrast (VC), – cathodoluminescence (CL)

• Emission Microscopy• Scanning Probe Microscopy• Thermal Analysis



Deprocessing:Destructive Physical Analysis (DPA)

• Modification of specimen in order to reveal internal structures and analyze failure site. May involve:– Cross-sectioning and metallography– Decapsulation or delidding– Residual Gas Analysis for internal gases



Electrical testing of

component and

connector

Scanning acoustic

microscope and X-ray radiograph

Decapsulation then optical microscope E-SEM, VC, and EBIC

Destructive cross-

section, E-SEM, and

EDS

Mechanical testing ofinternal

components

Shorts

Opens

Parametric shifts

Contact resistance

Package delamination

Package cracking

Wire sweep broken wire

Wire fatigue

Die cracking

Corrosion

SDDV and electromigration

Die cracking or bond lift

EOS/ESD

Intermetallic growth

Solder joint cracking and

coarsening

Part delamination and cracking

Wire pull

Bond shear

Die shear

Corrosion of leads

Part deformation

Package cracks

Damaged solder joints

Visual and light

microscope examination

of part

Physical Analysis of Failure Site



Root Cause Identification

• Testing may be needed to determine the effect of hypothesized factors on the failure.

• A design of experiment (DoE) approach is recommended to incorporate critical parameters and to minimize the number of tests.

• This experimentation can validate a hypothesized root cause.



Electrical Shorting on a 480V Rectifier Assembly Used in an Uncontrolled

Ambient Environments



• Failures in a 480 Volt rectifier assembly were reported. Unit was removed from a field location. This assembly suffered catastrophic damage to secondary side, including damage to solder mask, pin damage and potential board damage.

• CALCE inspected one failed and one non-failed fielded assembly to determine the cause of failure. Steps in the analysis:– Visual/optical inspection– Radiological inspection – Environmental Scanning Electron Microscopy (ESEM) and

Energy Dispersive Spectroscopy (EDS)

Introduction



Visual Inspection – Failed and Non-Failed Assemblies

Connector PTHs10mm

Failed Assembly – Secondary

Chassis

InsulatorPCB Connector

PTH: Plated Through HolePCB: Printed Circuit Board



Visual InspectionFORMEX GK-10 insulation

10mmNon-failed Fielded Assembly

Failed Fielded Assembly

Failed Fielded Assembly - OutsideInside



Optical Inspection – Failed Assembly (Secondary Side of PCB)

20mm



Failed Fielded Assembly Failed Fielded AssemblyOVHM OVHM

OVHMOVHMNon-Failed Non-Failed

OVHM: Oblique view high mag



E-SEM/EDS Inspection

Region 1Region 2

Region 1

OOCa

PbPb

Mn

SnSnCuCuSiSiBA

A

Region 2

B



Inspection of Regions Close to Washers

• Washer from the marked region was removed and inspected under low power stereo microscope. The PCBs/solder mask was also inspected optically.

• Corresponding washer from the non-failed board was also inspected.

• The washers and PCBs were also inspected in ESEM and EDS.

Failed



Optical Images – PCB/Solder MaskFailed Failed

Non-failedNon-failed



ESEM Images of WashersFailed

Non-Failed



EDS Elemental Analysis of WashersFailed

ESEM Image

O Si

Ca Zn

Fe

Presence of calcium suggests presence of same debris material that was observed in other areas throughout the secondary surface.



Summary and Conclusions• Region under the washer on the failed assembly contains residues that appear to

adhere to the solder mask. – These residues appear to be in the form of islands around the PCB through-hole. – Similar region on the non-failed assembly did not contain the whitish residues.

Debris observed on non-failed assembly appears to originate from the PCB through hole (glass fiber and resin debris).

• Particulate contaminant (and moisture) may have trapped between the inner side of FORMEX GK-10 and secondary side of PCB– Created low impedance paths

across pin pairs on the secondary side of the board.

• Energizing the circuit, without removal or disrupting these low impedance paths may have caused a catastrophic failure on the secondary side.



Failure Analysis of Schottky Diodes in D-67 Package



• Schottky diodes are reported to be exhibiting electrical shorts in field. CALCE conducted the analysis on some failed (in field applications) and as-received (from customer stock).

• Peak voltage is between 120V and 130V varying with load conditions. Diodes experience peak currents of 90A.

• Approach– Radiographic inspection (X-ray)– Dye penetrant testing of diodes from failed and non-failed assemblies– Chemical and mechanical decapsulation of selected samples– Optical inspection of decapsulated package– Environmental scanning electron microscopy (ESEM) – Energy dispersive spectroscopy (EDS) analysis for elemental identification of

materials.

Introduction

1 cm



Construction Analysis - I

Chemically decapsulated Schottky diode

Parts are chemically decapsulated using the process:1. Physically remove sleeve2. Immerse part in a beaker with 98% H2SO4, placed over 320°C hot plate3. Repeatedly rinse and re-immerse until molding compound is removed

Chemically decapsulated Schottky diode

Metal ConnectorAttach

Metal Clip Disc between clip and die top, attached with solder

Die

Disc under die

Heat spreader



Construction Analysis - IISolder

Solder

Solder

Solder

Mo Disc

Die Die

Mo Disc

Copper Heat Sink

Cross-section of the Schottky diode assembly

• Attach materials

• Die

• Metal components



X-ray Inspection Failed SampleFailed diode

Damaged to the diode was observed with x-ray inspection

Stock diode



Diode Investigation – IR Imaging

Localized Hotspot (IR Imaging)

Localized Hotspots (IR Imaging)



Delamination at Die/EMC Interface

Die

Delamination

Delamination



Construction Review – Stock Sample

• Four dies in the package, die size is 5mm × 5mm.• Fiducials are seen on 3 dies, under the molding compound (arrows). • Fiducials are Silver, as seen with EDS elemental analysis.

EDS elemental analysis shows the material is composed of Silver.



Distance from Die Edge - Fiducial

Fiducials are approximately 60µm from edge of the die

60µm

61µm

61µm

62µm 60µm



Non-failed Diode Assembly – Dye Penetrant Inspection

• After immersing and drying the diodes from non-failed assembly, the molding was pried open.

• Optical inspection revealed dye penetration under the molding compound. • In the image on the right, the dye is seen to reach the edge of on one of the four dies.

Extent of dye penetration



Conclusions• Given the presence of Silver on the samples,

either as fiducial or as die surface coating, there is an available source within the package for silver migration.

• In addition to presence of silver, a migration process will also be accelerated by the following:

1.Creation of a path by delamination between die edge and molding compound – dye penetrant test provided indication of poor contact between molding compound and heat spreader, thus creating a path for moisture ingress, other paths may exist, and further investigation is required

2.Absorption of moisture by the molding compound.



Failure Analysis of Multilayer Ceramic Capacitor (MLCC) with

Low Insulation Resistance



MLCC Construction

• Ceramic Dielectric– Typically comprised of compounds made with

titanium oxides BaTiO3 (“X7R”) for this study

• Electrodes– Base metal consisting of nickel (BME) Precious metal consisting of silver/ palladium

(PME)• End Termination

– Standard termination consists of silver or copper coated with nickel and tin

Flexible termination consists of a silver filled polymer coated with nickel and tin

Ref: Kemet



Loading Conditions: Temperature-Humidity-Bias

• A Temperature-Humidity-Bias (THB) test was performed for 1766 hours at 85°C and 85% RH, at the rated voltage of 50V.

• Capacitance, Dissipation Factor (DF) and Insulation Resistance (IR) were monitored during the test.

• A 1 MΩ resistor was placed in series with each of the MLCCs.

• The MLCCs were size 1812 and soldered to an FR-4 printed circuit board using eutectic tin-lead solder.

LCR Meter: C, DF

High Resistance Meter: IR

Data Acquisition, Temp.



IR Test Data for Failed Flexible Termination MLCCs

1.0E+05

1.0E+06

1.0E+07

1.0E+08

1.0E+09

0 200 400 600 800 1000 1200 1400 1600 1800

Time (Hours)

Insu

latio

n R

esis

tanc

e (O

hms)

Cap 24Cap 26Cap 62Cap 66



THB Failure Analysis Methodology for Biased MLCCs

• A Buehler MPC 2000 (with 9 micron lapping film) was used to cross-section the MLCC.

• The MLCC (on a PCB) was mounted to a fixture using wax.

• Wires were soldered to the board, along with a 1 kΩ series resistor.

• Resistance was monitored with a multimeter as the sample was moved ~5 microns at a time while checking for a resistance change.

• Epoxy was added under the part to prevent buildup of metal debris, which could cause an inaccurate resistance value.

OHM



20 µm

Metal Migration Between Electrodes

45 µm

SEM Image of Cross-sectionOptical Micrographs of Cross-section



EDS Line Scan Showing Silver and Palladium in Area of the Metallic Bridge

AgPd

100

80

60

40

20

0

Cou

nts

10 Distance [µm] 20 30

PdAg

Backgroundlevel of Ag

electrode electrode



EDS Map Showing Silver Migration and Voiding in Ceramic



Failure Mechanism• Metal migration was found in several of the failed

MLCCs.• Voids in the ceramic, without silver or palladium, were

also found close to the conduction path. • The failure mechanism was electrochemical co-

migration of silver and palladium, aided by porosity in the dielectric.



Restart Criteria

• Failures with severe consequences (e.g., safety) may require processes (e.g., manufacturing, distribution) to be interrupted after discovery of the failure.

• Depending upon the identified root cause, processes interrupted may be re-started if corrective action (s) can be implemented that will prevent the recurrence of the failure, or sufficiently minimize its impact.



Corrective Actions

• Many of the failures having a direct impact on production require immediate corrective actions that will minimize downtime.

• Although many immediate actions may correct symptoms, – temporary solutions may not be financially justifiable over the “long

haul”; and

– there is a large risk that a temporary solution may not solve the problem.



Verification

Verification of the corrective action includes:• verifying the approval and implementation of the corrective

action; • verifying a reduction in the incidence of failures;• verifying the absence of new failures associated with the

failure sites, modes, and mechanisms identified during the failure analysis.



Root Cause Analysis Report

The report should include the following information:1. Incident summary2. History and conditions at the time of failure3. Incident description4. Cause evaluated and rationale5. Immediate corrective actions6. Causes and long-term corrective actions7. Lesson learned8. References and attachments9. Investigating team description10.Review and approval team description11.Distribution list



Failures of a Failure Analysis Program

• Shutting down the malfunctioning equipment

• Refusing to recognize that a failure can or does exist

• Assuming an apparent cause to be the root cause

• Determining the failure cause by assumption

• Collecting insufficient information and ending an analysis before it is complete

• Discarding failed parts

• No documentation



Further Suggested Reading • Journal of Failure Analysis and Prevention, ASM

International.• Electronic Device Failure Analysis (EDFA) Journal, ASM

International.• Engineering Failure Analysis, Elsevier.• Electronic Failure Analysis Handbook, Perry L. Martin,

McGraw-Hill Professional.• Microelectronics Failure Analysis Desk Reference (Book +

CD set) [Hardcover], EDFAS Desk Reference Committee.



CALCE Introduction

• The Center for Advanced Life Cycle Engineering (CALCE) formally started in 1984, as a NSF Center of Excellence in systems reliability.

• One of the world’s most advanced and comprehensive testing and failure analysis laboratories

• Funded at $6M by over 150 of the world’s leading companies• Supported by over 100 faculty, visiting scientists and research

assistants• Received NSF

Innovation Award and NDIA Systems Engineering Excellence Award in 2009



CALCE Research Funding (over $6M): 2012• Alcatel-Lucent• Aero Contol Systes• Agilent Technologies• American Competitiveness Inst.• Amkor• Arbitron• Arcelik• ASC Capacitors• ASE• Astronautics• Atlantic Inertial Systems• AVI-Inc• Axsys Engineering• BAE Systems• Benchmark Electronics• Boeing• Branson Ultrasonics• Brooks Instruments• Buehler• Capricorn Pharma• Cascade Engineering • Celestical International• Channel One International• Cisco Systems, Inc.• Crane Aerospace & Electronics• Curtiss-Wright Corp• CDI• De Brauw Blackstone Westbroek• Dell Computer Corp.• DMEA• Dow Solar• DRS EW Network Systems, Inc.• EIT, Inc.• Embedded Computing & Power• EMCORE Corporation• EMC• EADS - France• Emerson Advanced Design Ctr

• Emerson Appliance Controls• Emerson Appliance Solutions• Emerson Network Power• Emerson Process Management• Engent, Inc.• Ericsson AB• Essex Corporation• Ethicon Endo-Surgery, Inc.• Exponent, Inc.• Fairchild Controls Corp.• Filtronic Comtek• GE Healthcare• General Dynamics, AIS & Land Sys.• General Motors• Guideline• Hamlin Electronics Europe• Hamilton Sundstrand• Harris Corp• Henkel Technologies• Honda• Honeywell• Howrey, LLP• Intel• Instituto Nokia de Technologia• Juniper Networks• Johnson and Johnson• Johns Hopkins University• Kimball Electronics• L-3 Communication Systems• LaBarge, Inc• Lansmont Corporation • Laird Technologies • LG, Korea• Liebert Power and Cooling• Lockheed Martin Aerospace• Lutron Electronics• Maxion Technologies, Inc.• Microsoft

• Motorola• Mobile Digital Systems, Inc.• NASA• National Oilwell Varco• NAVAIR• NetApp• nCode International• Nokia Siemens• Nortel Networks• Nordostschweizerische Kraftwerke

AG (NOK)• Northrop Grumman• NTSB• NXP Semiconductors• Ortho-Clinical Diagnostics• Park Advanced Product Dev. • Penn State University• PEO Integrated Warfare• Petra Solar • Philips• Philips Lighting• Pole Zero Corporation• Pressure Biosciences• Qualmark• Quanterion Solutions Inc• Quinby & Rundle Law• Raytheon Company• Rendell Sales Company• Research in Motion• Resin Designs LLC• RNT, Inc.• Roadtrack• Rolls Royce• Rockwell Automation• Rockwell Collins• Saab Avitronics• Samsung Mechtronics• Samsung Memory

• S.C. Johnson Wax• Sandia National Labs• SanDisk• Schlumberger• Schweitzer Engineering Labs • Selex-SAS• Sensors for Medicine and Science• SiliconExpert• Silicon Power• Space Systems Loral• SolarEdge Technologies• Starkey Laboratories, Inc• Sun Microsystems• Symbol Technologies, Inc• SymCom• Team Corp• Tech Film• Tekelec• Teradyne• The Bergquist Company• The M&T Company• The University of Michigan• Tin Technology Inc.• TÜBİTAK Space Technologies• U.K. Ministry of Defence• U.S. Air Force Research Lab• U.S. AMSAA• U.S. ARL• U.S. Naval Surface Warfare Center• U.S. Army Picatinney/UTRS• U.S. Army RDECOM/ARDEC• Vectron International, LLC• Vestas Wind System AS• Virginia Tech• Weil, Gotshal & Manges LLP• WesternGeco AS• Whirlpool Corporation• WiSpry, Inc.• Woodward Governor



• Consumer and mobile products• Telecommunications and computer systems• Energy systems (generation/storage/distr)• Industrial systems• Transportation systems• Aerospace systems• Medical systems• Military systems• Equipment manufacturers• Government Labs and Agencies



Non‐Destructive Evaluation3D X‐ray Imaging SystemScanning Acoustic Microscope (SAM)Fourier Transform Infrared Spectroscopy (FTIR)Automated Contact Resistance Probe (ACRP)X‐Ray Fluorescence Spectroscopy (XRF)

Non‐Destructive Evaluation3D X‐ray Imaging SystemScanning Acoustic Microscope (SAM)Fourier Transform Infrared Spectroscopy (FTIR)Automated Contact Resistance Probe (ACRP)X‐Ray Fluorescence Spectroscopy (XRF)

Electronic Testing and AnalysisSemiconductor Parameter AnalyzerImpedance Analyzer (1.86GHz)Microcircuit ProbeHigh Power Curve TracerLCR meterDynamic Signal AnalyzerEvent DetectorsElectrometerLCZ MeterThermal Inducing System (‐80oC to 225oC)Time Domain ReflectometerAnalog OscilloscopesPower SuppliesHigh Speed Digital Oscilloscope up to 20 GS/secDigital Communication Analyzer Arbitrary Wave Form GeneratorFunction GeneratorContact Resistance TesterNoise Figure AnalyzerVector Network AnalyzerHigh Resistance MeterDigital MultimetersAutomated Data Acquisition SystemsCascade Probe Station with RF probing capabilityAutomatic Battery Testers (Four and Sixteen Channel Systems)Ripple Current Tester

Electronic Testing and AnalysisSemiconductor Parameter AnalyzerImpedance Analyzer (1.86GHz)Microcircuit ProbeHigh Power Curve TracerLCR meterDynamic Signal AnalyzerEvent DetectorsElectrometerLCZ MeterThermal Inducing System (‐80oC to 225oC)Time Domain ReflectometerAnalog OscilloscopesPower SuppliesHigh Speed Digital Oscilloscope up to 20 GS/secDigital Communication Analyzer Arbitrary Wave Form GeneratorFunction GeneratorContact Resistance TesterNoise Figure AnalyzerVector Network AnalyzerHigh Resistance MeterDigital MultimetersAutomated Data Acquisition SystemsCascade Probe Station with RF probing capabilityAutomatic Battery Testers (Four and Sixteen Channel Systems)Ripple Current Tester

Thermal Assessment and ManagementLiquid Crystal ThermographyLow Speed Wind Tunnel Hot Wire AnemometerFlow Visualization SystemHigh Speed Video CameraThermal Conductivity Testing SystemLaser Flash Thermal Property Measurement SystemFlow/Velocity Measurement FacilitiesPressure Measurement Facilities

Thermal Assessment and ManagementLiquid Crystal ThermographyLow Speed Wind Tunnel Hot Wire AnemometerFlow Visualization SystemHigh Speed Video CameraThermal Conductivity Testing SystemLaser Flash Thermal Property Measurement SystemFlow/Velocity Measurement FacilitiesPressure Measurement Facilities

Materials CharacterizationDifferential Scanning Calorimeter (DSC)Micro‐Mechanical Materials TesterThermo‐Mechanical Analyzer (TMA)Dynamic Mechanical Analyzer (DMA)Creep Testing EquipmentThin Film Analyzer (TFA)MTS servo‐hydraulic mechanical test system(5 grams to 200 kg)• High‐strain rate characterization (100/sec)• Tests can be conducted in vacuum, inert or reactive atmospheres (‐125oC to 300oC)

Micro‐Hardness TesterMicro‐Fatigue TesterAdhesion Tester1D Electrodynamic Shaker6D Electrodynamic ShakerDrop TowersTorsion Tester

Materials CharacterizationDifferential Scanning Calorimeter (DSC)Micro‐Mechanical Materials TesterThermo‐Mechanical Analyzer (TMA)Dynamic Mechanical Analyzer (DMA)Creep Testing EquipmentThin Film Analyzer (TFA)MTS servo‐hydraulic mechanical test system(5 grams to 200 kg)• High‐strain rate characterization (100/sec)• Tests can be conducted in vacuum, inert or reactive atmospheres (‐125oC to 300oC)

Micro‐Hardness TesterMicro‐Fatigue TesterAdhesion Tester1D Electrodynamic Shaker6D Electrodynamic ShakerDrop TowersTorsion Tester

Opto‐Mechanics ExperimentationGeometric MoireMicroscopic and Shadow Moire InterferometryInfrared Fizeau InterferometryTwyman‐Green InterferometryLuminous Flux Measurement System

• 40” Integrating Sphere • Spectroradiometer

Opto‐Mechanics ExperimentationGeometric MoireMicroscopic and Shadow Moire InterferometryInfrared Fizeau InterferometryTwyman‐Green InterferometryLuminous Flux Measurement System

• 40” Integrating Sphere • Spectroradiometer

Sample Preparation Diamond SawPolishing and Grinding StationPlasma EtchingUltrasonic CleaningWire BonderDie BonderBuehler MPC 2000 Cross‐sectioning System

Sample Preparation Diamond SawPolishing and Grinding StationPlasma EtchingUltrasonic CleaningWire BonderDie BonderBuehler MPC 2000 Cross‐sectioning System

Failure AnalysisEnvironmental Scanning Electron Microscope (ESEM)

• (25x‐2500000x) • Energy Dispersive Spectroscopy (EDS)• In‐situ Heating/Mechanical Testing

Focused Ion Beam (FIB)Stereoscopes (10x‐63x)Optical Microscopes (25x‐1000x, Inverted and Upright)Image Analysis SoftwareTransmission Electron Microscope (TEM)Wire Pull, Bond Shear, Cold Bump Pull and Die Strength Automatic Chemical DecapsulatorIon Chromatograph

Failure AnalysisEnvironmental Scanning Electron Microscope (ESEM)

• (25x‐2500000x) • Energy Dispersive Spectroscopy (EDS)• In‐situ Heating/Mechanical Testing

Focused Ion Beam (FIB)Stereoscopes (10x‐63x)Optical Microscopes (25x‐1000x, Inverted and Upright)Image Analysis SoftwareTransmission Electron Microscope (TEM)Wire Pull, Bond Shear, Cold Bump Pull and Die Strength Automatic Chemical DecapsulatorIon Chromatograph

Virtual Qualification LabcalcePWACADMP‐IIcalceFASTDefects WebbookPEMs Webbook

Accelerated Test WebbookPWA Assembly WebbookIntegral Passives WebbookPWA Failure Mechanism WebbookSensor Technology Webbook

Environmental/Accelerated TestingTemperature‐Humidity ChambersHALT Temperature‐Vibration ChamberThermal Shock Chambers

• Liquid to Liquid• Air to Air

HAST Temperature‐Humidity ChambersHigh Altitude Simulation Chamber

• Pressure, Humidity, and Temp. CyclingHigh Temperature Aging ChambersMixed Flowing Gas (MFG) ChamberElectrodynamic Vibration ChamberImpact and Drop Test ApparatusSIR TestingHollow Fiber AssessmentAcoustic Anechoic Chamber

Environmental/Accelerated TestingTemperature‐Humidity ChambersHALT Temperature‐Vibration ChamberThermal Shock Chambers

• Liquid to Liquid• Air to Air

HAST Temperature‐Humidity ChambersHigh Altitude Simulation Chamber

• Pressure, Humidity, and Temp. CyclingHigh Temperature Aging ChambersMixed Flowing Gas (MFG) ChamberElectrodynamic Vibration ChamberImpact and Drop Test ApparatusSIR TestingHollow Fiber AssessmentAcoustic Anechoic Chamber

www.calce.umd.edu

CALCE Facilities and Capabilities

Documents

Root-Cause Failure Analysis of Electronics - · PDF fileUniversity of Maryland Center for Advanced Life Cycle Engineering Engineering University of Maryland Center for Advanced Life