RFSoC Design for 5G/mmWave Markets - keysight.com Design for 5G/mmWave Markets Peter A. Rabbeni Director RF Field Marketing & Business Development

RFSoC Design for 5G/mmWave MarketsPeter A. Rabbeni

Director RF Field Marketing & Business Development

More than 50 Billion connecteddevices by the year 2020.

Ericsson White Paper, February 2011

30 Billion wirelessly connected devices by the year 2020.

ABI Research, May 2013

2GLOBALFOUNDRIES Non-Confidential

Major Trends Fueling Wireless Growth

• Wirelessly enabled devices are driving three key market trends– Mobility

– Connectivity /Speed

– Intelligence

• RF technologies are a core component of these three trends


5G / Millimeter Wave Market Landscape

4

Three key market segments

Automotive Radar

Wireless Backhaul

Next Gen Wireless (5G)

*GLOBALFOUNDRIES Segment Marketing

GLOBALFOUNDRIES Non-Confidential

Automotive Radar Market Overview/Trends

• Automotive radar market segmented into two main applications– SRR: 24GHz

– LRR: 77GHz

• Automotive market in transition– Safety system mandates

– Semi-autonomous and fully autonomous vehicles

• Radar is an important part of the solution but systems require– More radar nodes (front, sides

and rear)

– Higher levels of integration (onboard MCU and DSP)


Wireless Backhaul Market Overview/Trends• Increased mobile data usage

placing strains on wireless infrastructure capacity

• Wireless backhaul to reach $6.4B in unit sales by 2017*

• Bandwidth availability will drive a transition from traditional microwave bands (6-38Ghz) to millimeter wave

• Advanced silicon technologies enable architecture innovation– Software defined radio (SDR)

– Network adaptability (beamforming)

*Source: http://www.exaltcom.com/wisp.aspx

*Source: http://ipcarrier.blogspot.com/2013/03/each-generation-of-mobile-networks-has.html


5G / Next Gen Wireless Market Overview/Trends• Market in pursuit of high

bandwidth, short/mid-range communications to support high data rate content– Uncompressed HD video

– IoT devices

– M2M and industrial applications

• 5G will bring about new methods in network/device management and analytics– Contexual processing

– Cloud computing

– Sensor networks

• Architectural innovation will play an important role in device cost and performance

*Source: http://www.microwavejournal.com/articles/18751-a-5g-wireless-communications-vision

*Source: http://www.forbes.com/sites/haydnshaughnessy/2013/05/17/who-should-be-scared-of-samsungs-1gb-wireless-technology/ 7GLOBALFOUNDRIES Non-Confidential

Why Millimeter Wave?

“Source: NTT Technical Journal, March 2009 8GLOBALFOUNDRIES Non-Confidential

Example: 5G/Millimeter Wave System Architecture


Example: 5G System Architecture Innovation

MCU/DSP

Digital Filtering

Predistorsion

Control

NVM/flash


GLOBALFOUNDRIES at a Glance

• Global Operations– Over 13,000 employees, 13 locations, three

continents– Administrative offices in Silicon Valley– 300mm Fabs in Singapore, Germany, New

York– 200mm Fabs in Singapore

• One of the World’s Largest Foundries– More than 160 customers including many

of the world’s largest IC companies

• Leadership in Foundry Technologyand Service – Substantial time-to-volume advantage

for advanced technologies– Driving the global standard for new

technologies– Full foundry offering from mainstream to

leading edge with value-added solutions– Committed to best-in-class customer service

11

New York

Germany

Singapore

GLOBALFOUNDRIES Non-Confidential

The First Truly Global Foundry


Regional OfficesManufacturing Centers

• >13,000 employees• 12 locations• 160 customers

HeadquartersSilicon Valley, CA

Austin, TX

East Fishkill, NY

Munich

Amsterdam

AbuDhabi,UAE

Yokohama, Japan

Shanghai, China

Hsinchu, Taiwan

Dresden, Germany SingaporeMalta, New York

Global Manufacturing Capacity ~6M Wafers/yr*

45nm to 28nm

60,000

180nm to 40nm

50,000 (300mm)120,000 (200mm)

CAPACITY IN WAFERS/MONTH

TECHNOLOGY

28nm, 20nm and ≤ 14nm

Up to 60,000

Malta, New York

* 200mm equivalent

GLOBALFOUNDRIES Non-Confidential 13

Dresden, Germany SingaporeMalta, New York

GLOBALFOUNDRIES RF Market Focus

Variability

Signal Integrity

Performance

� Process control, centering and repeatability

� Modeling accuracy and representation of process

� Signal leakage prediction and substrate noise contribution

� Device overdrive reliability modeling

� Fundamental RF metric leadership: Gain, NF, IP3

� Interference, distortion, efficiency, load mismatch handling


Our Solution… A Complete RF Foundry Offering

Process• Ft 160 - 350GHz

• Low-power CMOS

• Collaborative process development

• Marketplace success and maturity – Mobility & Connectivity SoCs, LTE radios, GPS, Wi-Fi, BT, DTV, etc

Models• Silicon Validated

RF Models

• Process and corner modeling

• Device noise modeling –Monte-Carlo & Statistical

• mmWavecoverage for active and passive elements

Design • Devices – FETs, MoM,

Resistors, MiM, UTM. DNWell

• Layout –DRC/LVS/PEX, ESD kit

• Simulation -GoldenGate, EMX, HFSS, Momentum, Peakview

• Packaging – 2.5D/3D integration

Support• Regional field

technical support

• ESD support

• Collaborative IP development through partnerships with 3rd party design centers and universities

Services• GlobalShuttle

MPW Program

• MOSIS MPW program

• DFM / Manufacturing Support

• Packaging / Test / Design

RF Technology Platform


LOGIC RFCMOSSiGe

BICMOSSi

BICMOS RF SOI mmWave

14nm

20nm

28nm

40nm

55nm

65nm

130nm

180nm

GLOBALFOUNDRIES RF Technology Offerings


A diverse technology portfolio addressing a variety of RF applications

Available In development

180/130nm 65/55nm 40nm 28nm 20nm

Cellular RF/BB SOCs

WiFi/BT/GPS/Combo chips

WiGig radios

Basestation RF/BB SoCs

Automotive Radar/ITS

Smart Cards/Medical Wireless

DTV/Set Top Box RF SoCs

Home Wireless Convergence

Public Safety Radio RF SoCs

Smart Meter Radio RF SoCs

Front End Module Components

GLOBALFOUNDRIES RF Application Matrix 2015


Production Engagements

Focus on Performance

Device Ft scalability supporting a broad range of RF/wireless applications


40LP-RF

Focus on Performance

Silicon-validated, physically scalable models allow for accurate simulation and device geometry optimization. Features such as deep nwell and gate double strapping improve isolation and improve device noise figure

40LP-RF40LP-RF M1

M3

M2

Guard Ring

Gate Poly



Flicker and thermal noise modeling including statistical noise behavior improve simulation value for sensitive RF blocks, i.e. LNAs, VCO/PLL

Focus on Signal Integrity

40LP-RF

Focus on Variability

Device modeling and characterization supporting Vt/Id mismatch and variations due to process, voltage, temperature and device self-heating effects further enhancing simulation accuracy

40LP-RF40LP-RF


Focus on Variability

Device modeling and characterization supporting variations due to geometry increase device performance confidence

l

w

l

w

40LP-RF 40LP-RF


Focus on RF Features – Thick Metals

� Rich back end metal stack flexibility and options provide ability to optimize RF passives integration

� Availability of MiMcapacitors allows integration of sensitive matching networks

40LP-RF


Focus on RF Features – APMOM Density


M1-M5

Enhanced, scalable MOM capacitor structures providing state of the art density and performance for low-cost passive structures

Focus on RF Features – Transmission Lines


Scalable transmission line library including Cadence pcells and silicon validated models up to 100GHz

M1-M5

Slow-Wave CPWG(SCPWG): Single and Coupled SCPWG

45/90 deg. Bent Transmission lines

Single and coupled CPW

Single and coupled CPWG Tee-junction CPW and CPWG (50 ohm)

Single and coupled CPWG with no shield at bottom

PDK in Action: 40nm 60GHz Bandpass Filter

� 60GHz passive bandpass filter is an example of GLOBALFOUNDRIES efforts to demonstrate performance in real-world applications

Insertion Gain

Input Matching

C2=76.9fF

C1=74.3fF C3=74.3fF

L1=9.9pH L2=9.9pH

L3=47.4pH=L4

L5=4.9pH=L6

Lx=Microstrip line, Cx=MIM Capacitor, = Interconnection Loss

60GHz band pass filter designed/optimized based on circuit topologyin [i] using GLOBALFOUNDRIES’ 40nm mm-wave model.

-2.55dB@60GHz (Literature [i])

-52dB@54GHz (This Work)

-37dB@61GHz (Literature [i])

-2.59dB@60GHz (This Work)

Pass Band (Shaded Region) fC=60GHz, S21≥-3dB

Pass Band (Shaded Region) fC=60GHz, S21 ≥-3dB

Max Insertion Gain

Best Matching(Max Return Loss)


PDK in Action: 40nm 77GHz Bandpass Filter

� 77GHz passive bandpass filter is an example of GLOBALFOUNDRIES efforts to demonstrate performance in real-world applications

LNA IIP3 Simulation

Insertion Gain

Input Matching

C2=42.4fF

C1=66.3fF C3=66.3fF

L1=9.7pH L2=9.7pH

L3=30.4pH=L4

L5=4.9pH=L6

Lx=Microstrip line, Cx=MIM Capacitor, = Interconnection Loss

77GHz band pass filter designed/optimized based on circuit topologyin [i] using GLOBALFOUNDRIES’ 40nm model

-2.55dB@60GHz (Literature [i])

-2.48dB@77GHz (This Work)

-37dB@61GHz (Literature [i])

Pass Band (Shaded Region) fC=77GHz. S21≤-3dB

Pass Band (Shaded Region) fC=77GHz, S21≥-3dB

-56dB@72GHz (This Work)

Best Matching(Max Return Loss)

Max Insertion Gain


Focus on RF Characterization

GLOBALFOUNDRIES has invested in critical RF characterization systems to enhance PDK model development and accuracy


4-Ports 50GHz System

2-Ports 110GHz System HF Noise 60GHz System

� IP‒ Foundation Libraries‒ Memory Compilers‒ GPIO and Standard Cell‒ Specialty IO‒ RF/Analog IP‒ PLL / DLL‒ High-speed PHY‒ Processor Cores

� EDA‒ ANSYS‒ Cadence‒ Keysight‒ Lorentz‒ Mentor Graphics‒ Synopsys

Rich RF SoC Design Ecosystem and EDA Support


Summary

• 5G systems promise to bring a new level of innovation to RF SOC design to support high BW data delivery

• Successful and timely deployment of RF solutions for 5G requires access to technology, features and enablement which minimize the risk of complex SOC design

• GLOBALFOUNDRIES supports a complete portfolio of mature and advanced RF technology offerings

• Our primary focus is on addressing the challenges of RF design to help reduce customer risk and enabling differentiated RF performance for our customers

• Features and options to address a full spectrum of RF applications

• Rich design enablement/IP ecosystem and customer support


Trademark Attribution

GLOBALFOUNDRIES®, the GLOBALFOUNDRIES logo and combinations thereof, and GLOBALFOUNDRIES’ other trademarks and service marks areowned by GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions. All other brand names, product names, or trademarks belong to their respective owners and are used herein solely to identify the products and/or services offered by those trademark owners.

© 2013 GLOBALFOUNDRIES Inc. All rights reserved.

Thank [email protected]

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RFSoC Design for 5G/mmWave Markets - keysight.com Design for 5G/mmWave Markets Peter A. Rabbeni Director RF Field Marketing & Business Development