RFP15N05 - Fairchild

8/3/2019 RFP15N05 - Fairchild

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2002 Fairchild Semiconductor Corporation RFP15N05L, RFP15N06L Rev. B

RFP15N05L, RFP15N06L

15A, 50V and 60V, 0.140 Ohm, Logic LevelN-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gatepower field effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA0522.

Features

15A, 50V and 60V

rDS(ON) = 0.140

Design Optimized for 5V Gate Drives

Can be Driven from QMOS, NMOS, TTL Circuits

Compatible with Automotive Drive Requirements

SOA is Power Dissipation Limited

Nanosecond Switching Speeds

Linear Transfer Characteristics

High Input Impedance

Majority Carrier Device

Related Literature

- TB334 Guidelines for Soldering Surface Mount

Components to PC Boards

Symbol

Packaging

JEDEC TO-220AB

Ordering Information

PART NUMBER PACKAGE BRAND

RFP15N05L TO-220AB RFP15N05L

RFP15N06L TO-220AB RFP15N06L

NOTE: When ordering, use the entire part number.

D

G

S

SOURCEDRAIN

GATEDRAIN

(TAB)

Data Sheet January 2002


2/7


Absolute Maximum Ratings

T

C

= 25

o

C, Unless Otherwise Specified

RFP15N05L RFP15N06L UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

50 60 V

Drain to Gate Voltage (R

GS

= 20k

) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

50 60 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

DM

15

40

15

40

A

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

10

10 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Above T

C

= 25

o

C, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60

0.48

60

0.48

W

W/

o

C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

J, T

STG

-55 to 150 -55 to 150

o

C

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

L

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

pkg

300

260

300

260

o

C

o

C

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. T

J = 25

o

C to 125

o

C.

Electrical Specifications

T

C

= 25

o

C, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSS

I

D

= 250

A, V

GS

= 0V

RFP15N05L 50 - - V

RFP15N06L 60 - - V

Gate Threshold Voltage V

GS(TH)

V

GS

= V

DS

, I

D

= 250

A (Figure 7) 1 - 2 V

Zero Gate Voltage Drain Current I

DSS

V

DS

= 48V, V

DS

= 50V - - 1

A

V

DS

= 48V, V

DS

= 50V TC = 125

o

C - - 50

A

Gate to Source Leakage Current I

GSS

V

GS

=

10V, V

DS

= 0V - - 100 nA

Drain to Source On Resistance (Note 2) r

DS(ON)

I

D

= 15A, V

GS

= 5V (Figures 5, 6) - - 0.140

Input Capacitance C

ISS

V

DS

= 25V, V

GS

= 0V, f = 1MHz

(Figure 8)

- - 900 pF

Output Capacitance C

OSS

- - 450 pF

Reverse-Transfer Capacitance C

RSS

- - 200 pF

Turn-On Delay Time t

d(ON)

V

DD

= 30V, I

D

= 7.5A, R

G

= 6.25

(Figures 10, 11)

- 16 40 ns

Rise Time t

r

- 250 325 ns

Turn-Off Delay Time t

d(OFF)

- 200 325 ns

Fall Time t

f

V

GS

= 5V - 225 325 ns

R

JC

RFP15N05L, RFP15N06L - - 2.083

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V

SD

I

SD

= 7.5A - - 1.4 V

Diode Reverse Recovery Time t

rr

I

SD

= 4A, dI

SD

/dt = 100A/

s - 225 - ns

NOTE:

2. Pulsed: pulse duration =

300

s maximum, duty cycle =

2%.

3. Repititive rating: pulse width limited by maximum junction temperature.



3/7


Typical Performance Curves

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. FORWARD BIAS SAFE OPERATING AREA

FIGURE 3. SATURATION CHARACTERISTICS FIGURE 4. TRANSFER CHARACTERISTICS

FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

FIGURE 6. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

0 50 100 1500

TC, CASE TEMPERATURE (oC)

POWERDISSIPATIONMULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

1 10 100 1000

VDS, DRAIN SOURCE VOLTAGE (V)

100

10

1

0

ID,DRAINCURRENT(A)

OPERATION INTHIS AREA ISLIMITED BY rDS(ON)

ID MAX CONTINUOUS

RFP15N06LRFP15N05L

DCOPERATION

CURVES MUST BEDERATED LINEARLYWITH INCREASE INTEMPERATURE

TC = 25oC

VGS = 10V

0 1 2 3 4 5

VDS, DRAIN TO SOURCE VOLTAGE (V)

40

30

20

10

0

IDS,DRAINTOSOURCECURRENT(A) PULSE DURATION = 80s

DUTY CYCLE 0.5% MAXTC = 25

oC

VGS = 7.5V

VGS = 3.5V

VGS = 3V

VGS = 5V

VGS = 4.5V

VGS = 4V

VGS = 2V

VGS = 2.5V

0 1 2 3 4 5

VGS, GATE TO SOURCE VOLTAGE (V)

16

14

12

10

8

6

4

2

0

IDS,DRAINTOSOURCECURRENT

-40oC

125oC

25oC

VDS = 10V

PULSE DURATION = 80s

DUTY CYCLE 0.5% MAX

125oC

-40

o

C

0 2 4 6 8 10 12 14 16

ID, DRAIN TO SOURCE CURRENT (A)

0

rDS(ON),DR

AINTOSOURCE

ONRES

ISTANCE()

VGS = 5V

PULSE DURATION = 80s

DUTY CYCLE 0.5% MAX

0.3

0.2

0.1

TC = 125oC

25oC

-40oC

VGS = 10V, ID = 15A2.0

1.5

1

0.5

0-50 0 50 100 150 200

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZEDDRAINTOSOURCE

ONRE

SISTANCE

PULSE DURATION = 80sDUTY CYCLE = 0.5% MAX



4/7


FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.

FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

Test Circuits and Waveforms

FIGURE 10. SWITCHING TIME TEST CIRCUIT FIGURE 11. RESISTIVE SWITCHING WAVEFORMS

Typical Performance Curves Unless Otherwise Specified (Continued)

VGS = VDS

ID = 250A

1.4

1.2

1

0.8

0.6-50 0 50 100 150 200

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZEDGATETHRESHOLD

VOLTAGE

1600

1400

1200

1000

800

600

400

200

00 10 20 30 40 50

VDS, DRAIN TO SOURCE VOLTAGE (V)

C,CAPACITAN

CE(pF)

CRSS

COSS

CISS

VGS = 0V, f = 1MHz

CISS = CGS + CGDCRSS = CGDCOSS CDS + CGD

60

45

30

15

0

10

8

6

4

2

0

GATE SOURCE

VOLTAGE

RL = 4

IG(REF) = 0.5mA

VGS = 5V

DRAIN SOURCE VOLTAGEDRAINTOSOURCEVOLTAGE(V)

GATETOSOURCEVOLTAGE(V)

IG (REF)

IG (ACT)20

IG (REF)

IG (ACT)80t, TIME (s)

BVDSS

VDD = BVDSS VDD = BVDSS

0.75BVDSS0.50BVDSS0.25BVDSS

VGS

RL

RG

DUT

+

-VDD

tON

td(ON)

tr

90%

10%

VDS90%

10%

tf

td(OFF)

tOFF

90%

50%50%

10%PULSE WIDTH

VGS

0

0



5/7


FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS

Test Circuits and Waveforms (Continued)

RL

VGS +

-

VDS

VDD

DUT

IG(REF)

VDD

Qg(TH)

VGS = 1V

Qg(5)

VGS = 5V

Qg(TOT)

VGS = 10V

VDS

VGS

IG(REF)

0

0



6/7

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:

1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to the

user.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

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Documents

RFP15N05 - Fairchild