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RF, Electrical, and Magnetic Microsystems Bruce K. Gale Fundamentals of Micromachining RF MEMS Growth Projections RF MEMS Concept Cell Phone Components

RF MEMS Growth Projections RF, Electrical, and Magnetic

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Page 1: RF MEMS Growth Projections RF, Electrical, and Magnetic

RF, Electrical, and MagneticMicrosystems

Bruce K. GaleFundamentals of Micromachining

RF MEMS Growth Projections

RF MEMS Concept Cell Phone Components

Page 2: RF MEMS Growth Projections RF, Electrical, and Magnetic

RF MEMS Applications RF MEMS

Cell Phone on a Chip Integrated Passive Components

Page 3: RF MEMS Growth Projections RF, Electrical, and Magnetic

MEMS Switches Electrostatic Microswitch

MEMS Inductors

Air Core

Ni-Fe Core

Alternate Configuration

Hi Q Inductor

Page 4: RF MEMS Growth Projections RF, Electrical, and Magnetic

Variable Capacitor Other RF MEMS Devices

Recinfigurable Antenna Magnetic Assembly

Magnets to raise structure

100% efficient assembly

Page 5: RF MEMS Growth Projections RF, Electrical, and Magnetic

Magnetic Microvalve Magnetic Microvalve

MEMS Transformer

The maximum electrostatics potential energyEe,m=ε0wvVb

2/2d Ee,m=(l0)(l1)(l1)(l2)/(l1)=l3F=-dE/dx=(l3)/(l1)=(l2)

Electrostatics

Page 6: RF MEMS Growth Projections RF, Electrical, and Magnetic

Electrostatics Applications• Actuators

– micromotors, microvalves, mechanical resonators, switches, micro mirror, etc.

• Sensors– Micro accelerometer, micro gyroscope, etc.

Left: Vertically driven polysilicon bridgeResonant microstructures/devices

Right: Laterally driven electrostatic actuatorlarge displacement devices

Electrostatic Actuation

Electrostatic Wobble Motor

F ∝ L3Magnetic ForceMagnetic materials are not suitable formicroactuators, but are good formicrosensors. However, there are some microactuatorsunder investigation.

Magnetic MEMS Devices

Page 7: RF MEMS Growth Projections RF, Electrical, and Magnetic

Hall Effect Sensors• Hall Effect

– Charges traveling through a perpendicular magnetic field are subject to a deflection by a force known as the Lorentz force

– This deflection causes a voltage that can be measured in the perpendicular direction

– The Hall effect was discovered by Edwin Hall In 1879 while he was a graduate student at Johns Hopkins University.

Hall-voltage Sensors

Carrier Domain Magnetometers Tunneling Magnetometers

Page 8: RF MEMS Growth Projections RF, Electrical, and Magnetic

Magnetic Field Actuators Magnetic Micromotors