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RF MEMS CircuitsApplications of MEMS switch and tunable capacitor
Dr. Jeffrey DeNatale,Manager, MEMS DepartmentElectronics Divisionjdenatale@rwsc.com805-373-4439
Panamerican Advanced Studies InstituteMicroElectroMechanical SystemsJune 21-30, 2004
Chart 2
Outline
Motivation for RF MEMS circuits
MEMS Tunable Filters
Switch based
Tunable capacitor based
MEMS Phase Shifters
Low-Loss Switching Networks
Reconfigurable MMIC Circuits
Summary / Acknowledgements
Chart 3
MEMS for RF Communications
MEMS is key enabling technology addressing pervasive trends in communications and radar systems:
tunability / agility / modularity / reconfigurability
increased functionality (component, system)
Substantial performance improvements:
Insertion loss, isolation, linearity, power consumption, bandwidth, size, integration
Range of device concepts under development RF Switches / Relays Tunable Capacitors Micromachined inductors Micromechanical resonators
Building Blocks for High-Performance Miniaturized RF Subsystems
Range of device concepts under development RF Switches / Relays Tunable Capacitors Micromachined inductors Micromechanical resonators
Building Blocks for High-Performance Miniaturized RF Subsystems
X-Band Phase Shifter
80 90 100 110 120 130 140 150 160 170 180-80
-70
-60
-50
-40
-30
-20
-10
0
Frequency (MHz)
S2
1,
dB
Low band Mid band High Band
80 90 100 110 120 130 140 150 160 170 180-80
-70
-60
-50
-40
-30
-20
-10
0
Frequency (MHz)
S2
1,
dB
Low band Mid band High Band
Multi-band (X, Ku) amplifier
2-Pole MEMS Switched Filter
SP4T Routing Network
Leverage small mechanical motions for large RF property excursionsLeverage small mechanical motions for large RF property excursions
Chart 4
RSC MEMS RF Switch
Key Elements of RSC MEMS RF Switch Low-temperature processing (circuit compatible) Broadband (DC- mmWave) Electrostatic drive for low power consumption Low insertion loss (
Chart 5
MEMS RF Switch Step-Tuned Filter Demobenchmark MEMS switch vs. PIN diode
VHF Filter Circuit VHF Step-tuned Bandpass Filter 116-152 MHz
dual MEMS switch replaces 2 PIN dual diodes
increased dynamic range, reduced parts count
Filter Specifications (2-Pole VHF Filter)
Center Freq. Tuning Range: 116-151.975 MHz
Selectivity (fo 8 MHz) 13.4 dB rejection
Tune time: < 75 microseconds
2-pole midband loss < 4.5 dB
2-pole 1 dB compression pt. > +20 dBm
MTO MEMS
DARPADARPA
Derived Component Requirements - RF Switch (Packaged)
Max Rs (on): 1.8 Ohm (0.5 GHz)Max Cs (off): 0.5 pF (0.5 GHz)Min. 3rd Order IP: 50 dBmIRF, VRF (survive): 0.2 A, 10.4 V rmsIRF, VRF (op): 0.03 A, 2.1 V rmsSw Time: 15 usec max.
2-Pole Sub-section
6-Pole Filter
Switch Drivers
Chart 6
VHF 2-Pole MEMS Switched Filter Prototype
2-Pole MEMS Switched Filter Prototype
Packaged MEMS Switches (8X)
Future: IntegratedMonolithic Switches + Capacitors
Packaged circuit with 16 switched capacitors, in one monolithic die
Step-Tunable Filter withMEMS Switches + Discrete Capacitors
500x Improvement in Linearity 42% Parts Count Reduction (123 vs 71 for 2 pole) Static Power Reduced from 0.5W to near-zero (2 pole)
Chart 7
VHF 2-Pole MEMS Switched Filter Test Data
60 70 80 90 100 110 120 130 140 150 160 170 180 19050 200
-70
-60
-50
-40
-30
-20
-10
-80
0
Inse
rtio
n G
ain
(d
B)
Frequency (MHz)
Demonstrate Step-Tuning with good filter characteristics over full band
Demonstrate Step-Tuning with good filter characteristics over full band
Chart 8
VHF 2-Pole MEMS Switched Filter Intermodulationkey parameter for cosite mitigation
3rd Order In-Band IM Distortion - 112.05 MHz Fc
Output Tone Level+20 dBm
IMR3 = -71.5 dBc
IP3o = +55.75 dBm
Chart 9
RSC MEMS Tunable Capacitor (Varactor)
5 m
30 m
100 mSEM micrographs showing the high aspect ratio feature of the MEMS tunable cap.
Tuning range: >8:1Base capacitance: 1.5 - 2pFElectrical Q: 30-150Max tuning voltage: 6-40VMechanical Resonance : 0.4 - 2kHz typElectrical self-resonance: 6GHz
Tuning range: >8:1Base capacitance: 1.5 - 2pFElectrical Q: 30-150Max tuning voltage: 6-40VMechanical Resonance : 0.4 - 2kHz typElectrical self-resonance: 6GHz
Capacitor Tuning Range
0
2
4
6
8
10
12
14
0 1 2 3 4 5 6 7 8 9
Voltage (V)
Cap
acita
nce
(pF)
8.4X
Tuning range >8.4XTuning range >8.4X
Chart 10
Voltage Tunable Filter Demonstrationbenchmark MEMS vs. semiconductor varactor
UHF Filter Circuit UHF Voltage-tuned Bandpass Filter 225-400 MHz
MEMS variable capacitor replaces varactor diode array
increased dynamic range, drastically reduced parts count
Filter Specifications (2-Pole UHF Filter) Center Freq.Tuning Range: 225-399.975 MHz
Selectivity (fo 13 MHz) 10.75 dB rejection Tune time: < 27 microseconds
2-pole midband loss < 5.5 dB
MTO MEMS
DARPADARPA
Derived Component Requirements -Variable Capacitor (Packaged)
Cap. Range: 2.5 - 10 pF (4:1)
Tune V Range: 1-6 VDC
Max Rs: 1.0 Ohm @ 10 pF
IRF, VRF (op): 0.18 A, 21 V rms
Tune Time: 10 usec max.
16-diode series-parallel array for high IP (1 array per pole)
16-diode series-parallel array for high IP (1 array per pole)
Chart 11
UHF 2-Pole MEMS Capacitor Filter Schematic
MEMS Capacitor Filter Schematic
MEMS Filter, 2 tunable capacitors
Dramatic (90%) parts count reduction validated for MEMS circuit
Slightly improved IP3 (+30 to +37dBm)
Dramatic (90%) parts count reduction validated for MEMS circuit
Slightly improved IP3 (+30 to +37dBm)
Existing Varactor Version16-diode series-parallel arrays
Chart 12
UHF 2-Pole MEMS Capacitor Filter Test Data
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
150.0 200.0 250.0 300.0 350.0 400.0 450.0
Frequency (MHz)
Ins
ert
ion
Ga
in (
dB
)
228 MHz Fo
312.5 MHz Fo
398 MHz Fo
Nearly full octave tuning achievedNearly full octave tuning achieved
Chart 13
Tunable Capacitor Improvements Required Results from tunable capacitor filter demo
Initial filter insertion validated utility of MEMS tunable capacitor in filter tuning circuit, but issues noted:
Device Q: series resistance ~1 (solution: improvedmetalization, device design)
Tuning speed, Vibration Immunity: (solution: stiff flexures, reduced mass, package environment)
Mechanical Ringing: settling time ~4msec (solution: package environment)
Maximum capacitance value: ~12pF (solution:thicker device layer, package environment - up to 25pF demonstrated)
Tunable Capacitor Response Time
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-0.0005 0.0005 0.0015 0.0025 0.0035 0.0045 0.0055 0.0065 0.0075 0.0085
Time (seconds)
Rel
ativ
e C
apac
itan
ce (
Arb
)
Filtered Response
0
0.2
0.4
0.6
0.8
1
1.2
-0.0005 0.0015 0.0035 0.0055 0.0075 0.0095
Time (sec)
Fil
tere
d O
utp
ut
AirDamping
NearCriticalDamping
Tunable Capacitor with 80m deep combs
Filtered response to step input
Effect of damping on device response time
Chart 14
MEMS TTD Phase Shifter DevelopmentKey Component for Steerable Phased Arrays
Switchable Delay Line MEMS Switch can enable significant advances in reconfigurable electronics
Low insertion loss compatible with multi-switch implementation
High isolation reduces resonant effects of off-state leakage
Metal-Metal contacts enable broad bandimplementation
Compatible with MMIC processing
Exploit low-loss, broadband characteristics for multi-bit True
Time Delay (TTD) Circuit
Exploit low-loss, broadband characteristics for multi-bit True
Time Delay (TTD) Circuit
Steering of main lobe at
= cos-1(-/d)
Powerdivider
Phaseshifter
Antenna
2 30
d
Chart 15
MEMS-Based Phase Shifter Circuits
RSC has demonstrated broad portfolio of MEMS-based phase shifter circuits
Exploit low-loss, broadband nature of RSC MEMS switch
Novel circuits demonstrated for low loss, compact size, broad bandwidth
3-Bit Ka-Band (2.2dB avg)
6-Bit Broad Band
4-Bit Broad Band (2.4dB avg)
2-Bit X-Band(1dB avg)
2-Bit Low LossX-Band (.56 dB avg)
4-Bit Low LossX-Band (1.2 dB avg)
Miniature 2-bit, 4-bit X-Band (0.7dB 9.5GHz
Chart 16
4-Bit Broadband TTD Phase Shifter Circuitexploit broadband nature of RSC switch
4-Bit TTD circuits implemented (16 MEMS switches per circuit)
2.2 to 2.6 dB insertion loss at 10GHz
Mismatch loss below 15 dB at all frequencies
group delay ripple
Chart 17
Low-Loss SP4T-Based Phase Shifters (RSC/U