Quad Precision Operational Amplifiers (Rev. C PRECISION OPERATIONAL AMPLIFIERS ... Texas Instruments semiconductor products and disclaimers thereto appears at the end of this ... Q6

LT1014, LT1014A, LT1014DQUAD PRECISION OPERATIONAL AMPLIFIERS

SLOS039C – JULY 1989 – REVISED SEPTEMBER 1999

1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Single-Supply Operation:Input Voltage Range Extends to Ground,and Output Swings to Ground WhileSinking Current

Input Offset Voltage 300 µV Max at 25°C forLT1014

Offset Voltage Temperature Coefficient2.5 µV/°C Max for LT1014

Input Offset Current 1.5 nA Max at 25 °C forLT1014

High Gain 1.2 V/ µV Min (RL = 2 kΩ), 0.5 V/µVMin (RL = 600 Ω) for LT1014

Low Supply Current 2.2 mA Max at 25 °C forLT 1014

Low Peak-to-Peak Noise Voltage0.55 µV Typ

Low Current Noise 0.07 pA/ √Hz Typ

description

The LT1014, LT1014A, and LT1014D are quadprecision operational amplifiers with 14-pinindustry-standard configuration. They feature lowoffset-voltage temperature coefficient, high gain,low supply current, and low noise.

The LT1014, LT1014A, and LT1014D can beoperated with both dual ±

The common-mode input voltagerange includes ground, and the output voltage canalso swing to within a few milivolts of ground.Crossover distortion is eliminated.

The LT1014C and LT1014 AC are characterizedfor operation from 0°C to 70°C. The LT1014I andLT1014DI are characterized for operation from–40°C to 105°C. The LT1014M, LT1014AM andLT1014DM are characterized for operation overthe full military temperature range of –55°C to125°C.

Copyright 1999, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

1OUT1IN–1IN+

VCC+2IN+2IN–

2OUTNC

4OUT4IN–4IN+VCC–/GND3IN+3IN–3OUTNC

DW PACKAGE(TOP VIEW)

1

2

3

4

5

6

7

14

13

12

11

10

9

8

1OUT1IN–1IN+

VCC+2IN+2IN–

2OUT

4OUT4IN–4IN+VCC–3IN+3IN–3OUT

3 2 1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

4IN+NCVCC–/GNDNC3IN+

1IN+NC

VCC+NC

2IN+

1IN

–1O

UT

NC

3IN

–4I

N–

2IN

–2O

UT

NC

3OU

T4O

UT

J OR N PACKAGE(TOP VIEW)

FK PACKAGE(TOP VIEW)

NC – No internal connection



2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

AVAILABLE OPTIONS

PACKAGED DEVICES

TAVIO maxAT 25°C

SMALLOUTLINE

(DW)

CHIPCARRIER

(FK)

CERAMICDIP(J)

PLASTICDIP(N)

0°C to 70°C 300 µV — — — LT1014CN0°C to 70°C µ

800 µV LT1014DDW — — LT1014DN

40°C to 105°C 300 µV — — — LT1014IN–40°C to 105°C µ

800 µV LT1014DIDW — — LT1014DIN

180 µV — LT1014AMFK LT1014AMJ —–55°C to 125°C

180 µV300 µV —

LT1014AMFKLT1014MFK

LT1014AMJLT1014MJ LT1014MNµ

800 µV LT1014DMDW — — LT1014DMN

The DW package is available taped and reeled. Add the suffix R to the device type (e.g., LT1014DDWR).




schematic (each amplifier)

VC

C+

IN–

IN+

V CC

–

Ωk9

Ωk9

Ωk1.

6Ωk

1.6

Ωk1.

6Ω

100

Ωk1

Ω80

0

Q5

Q6

Q13

Q16

Q14

Q15

Q32

Q30

Q25

Q35

Q36

Q41

Q39

Ω60

0

Q3

Q4

Q37

J1

Q33

Q26

Ωk3.

9

Q27

Q38

Q28

Q2

Q22

Q1

Q21

Ω40

0

Ω40

0

Q12

Q11

Q9

75 p

F

Q7Q

29

Q10

Q18

Q19

Q17

21 p

F2.

5 pF

Ωk2.

4

Ω18

Ωk14 OU

T

Q40

Q8

Ωk5

Ωk5

10 p

F

Ωk2

Ωk1.

3

Q20

4 pF

Q31

Q34

Q23

Q24

Ωk2 10

pF

Ωk2

Ω30

Ωk42

Com

pone

nt v

alue

s ar

e no

min

al.




absolute maximum ratings over operating free-air temperature range (unless otherwise noted) †

Supply voltage (see Note 1): VCC+ 22 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCC– –22 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Differential input voltage (see Note 2) ±30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage range, VI (any input) (see Note 1) VCC– – 5 V to VCC+. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) TA = 25°C (see Note 3) Unlimited. . . . . . . . . . . . . . . . . . . . . . . . . Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, TA: LT1014C, LT1014DC –0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . .

LT1014I, LT1014DI –40°C to 105°C. . . . . . . . . . . . . . . . . . . . . . . . . . LT1014M, LT1014AM, LT1014DM –55°C to 125°C. . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: J package 300°C. . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: DW or N package 260°C. . . . . . . . . . . . . . . Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC–.2. Differential voltages are at the noninverting input with respect to the inverting input.3. The output may be shorted to either supply.

DISSIPATION RATING TABLE

PACKAGETA ≤ 25°C

POWER RATINGDERATING FACTORABOVE TA = 25°C

TA = 70°CPOWER RATING



DW 1025 mV 8.2 mW/°C 656 mW 369 mW 205 mW

FK 1375 mV 11.0 mW/°C 880 mW 495 mW 275 mW

J 1375 mV 11.0 mW/°C 880 mW 495 mW 275 mW

N 1150 mV 9.2 mW/°C 736 mW 414 mW 230 mW




electrical characteristics at specified free-air temperature, V CC± = ±15 V, VIC = 0 (unless otherwisenoted)

PARAMETER TEST CONDITIONS T †LT1014C LT1014DC

UNITPARAMETER TEST CONDITIONS TA†MIN TYP‡ MAX MIN TYP‡ MAX

UNIT

VIO Input offset voltage RS = 50 Ω25°C 60 300 200 800

µVVIO Input offset voltage RS = 50 ΩFull range 550 1000

µV

VIOTemperature coeficientof input offset voltage

Full range 0.4 2.5 0.7 5 µV/°C

Long-term driftof input offset voltage

25°C 0.5 0.5 µV/mo

IIO Input offset current25°C 0.15 1.5 0.15 1.5

nAIIO Input offset currentFull range 2.8 2.8

nA

IIB Input bias current25°C –12 –30 –12 –30

nAIIB Input bias currentFull range –38 –38

nA

VICRCommon-modeinput voltage range

25°C–15

to13.5

–15.3to

13.8

–15to

13.5

–15.3to

13.8 VICR input voltage range

Full range–15

to 13–15

to 13

VOMMaximum peak output

RL = 2 kΩ25°C ±12.5 ±14 ±12.5 ±14

VVOM voltage swingRL = 2 kΩ

Full range ±12 ±12V

L i l diff ti lVO = ±10 V, RL = 600 Ω 25°C 0.5 2 0.5 2

AVDLarge-signal differentialvoltage amplification VO = ±10 V RL = 2 kΩ

25°C 1.2 8 1.2 8 V/µVvoltage am lification VO = ±10 V, RL = 2 kΩ

Full range 0.7 0.7

CMRRCommon-mode VIC = –15 V to 13.5 V 25°C 97 117 97 117

dBCMRRrejection ratio VIC = –15 V to 13 V Full range 94 94

dB

kSVR

Supply-voltagerejection ratio VCC± = ±2 V to ±18 V

25°C 100 117 100 117dBkSVR rejection ratio

(∆VCC/∆VIO)VCC± = ±2 V to ±18 V

Full range 97 97dB

Channel separation VO = ±10 V, RL = 2 kΩ 25°C 120 137 120 137 dB

ridDifferentialinput resistance

25°C 70 300 70 300 MΩ

ricCommon-modeinput resistance

25°C 4 4 GΩ

ICCSupply current 25°C 0.35 0.55 0.35 0.55

mAICCy

per amplifier Full range 0.6 0.6mA

† Full range is 0°C to 70°C.‡ All typical values are at TA = 25°C.




electrical characteristics at specified free-air temperature, V CC± = 5 V, VCC– = 0, VO = 1.4 V, VIC = 0(unless otherwise noted)

PARAMETER TEST CONDITIONS T †LT1014C LT1014DC

UNITPARAMETER TEST CONDITIONS TA†MIN TYP MAX MIN TYP MAX

UNIT



µV

IIO Input offset current25°C 0.2 2 0.2 2

nAIIO Input offset currentFull range 6 6

nA



nA


25°C0

to 3.5–0.3

to 3.80

to 3.5–0.3

to 3.8 VICR in ut voltage rangeFull range 0 to 3 0 to 3

Output low, No load 25°C 15 25 15 25

Output low, 25°C 5 10 5 10mV

M i k t t

,RL = 600 Ω to GND Full range 13 13

mV

VOMMaximum peak outputvoltage swing

Output low, Isink = 1 mA 25°C 220 350 220 350voltage swing

Output high, No load 25°C 4 4.4 4 4.4

Output high, 25°C 3.4 4 3.4 4 Vg ,RL = 600 Ω to GND Full range 3.2 3.2

AVDLarge-signal differentialvoltage amplification

VO = 5 mV to 4 V,RL = 500 Ω 25°C 1 1 V/µV


mAICCy


† Full range is 0°C to 70°C.

operating characteristics, V CC± = ±15 V, VIC = 0, TA = 25°CPARAMETER TEST CONDITIONS MIN TYP MAX UNIT

SR Slew rate 0.2 0.4 V/µs

V Equivalent input noise voltagef = 10 Hz 24

nV/√HzVn Equivalent input noise voltagef = 1 kHz 22

nV/√Hz

VN(PP) Peak-to-peak equivalent input noise voltage f = 0.1 Hz to 10 Hz 0.55 µV

In Equivalent input noise current f = 10 Hz 0.07 pA/√Hz





PARAMETER TEST CONDITIONS T †LT1014I LT1014DI

UNITPARAMETER TEST CONDITIONS TA†MIN TYP‡ MAX MIN TYP‡ MAX

UNIT



µV

VIOTemperature coeficientof input offset voltage

Full range 0.4 2.5 0.7 5 µV/°C

Long-term driftof input offset voltage

25°C 0.5 0.5 µV/mo

IIO Input offset current25°C 0.15 1.5 0.15 1.5

nAIIO Input offset currentFull range 2.8 2.8

nA



nA


25°C–15

to13.5

–15.3to

13.8

–15to

13.5

–15.3to

13.8 VICR input voltage range

Full range–15

to 13–15

to 13

VOMMaximum peak

RL = 2 kΩ25°C ±12.5 ±14 ±12.5 ±14

VVOM output voltage swingRL = 2 kΩ

Full range ±12 ±12V

L i l diff ti lVO = ±10 V, RL = 600 Ω 25°C 0.5 2 0.5 2

AVDLarge-signal differentialvoltage amplification VO = ±10 V RL = 2 kΩ

25°C 1.2 8 1.2 8 V/µVvoltage am lification VO = ±10 V, RL = 2 kΩ

Full range 0.7 0.7

CMRRCommon-mode

VIC = 15 V to 13 5 V25°C 97 117 97 117

dBCMRRrejection ratio

VIC = –15 V to 13.5 VFull range 94 94

dB

kSVR

Supply-voltagerejection ratio VCC± = ±2 V to ±18 V

25°C 100 117 100 117dBkSVR rejection ratio

(∆VCC/∆VIO)VCC± = ±2 V to ±18 V

Full range 97 97dB

Channel separation VO = ±10 V, RL = 2 kΩ 25°C 120 137 120 137 dB

ridDifferentialinput resistance

25°C 70 300 70 300 MΩ


25°C 4 4 GΩ


mAICCy


† Full range is –40°C to 105°C.‡ All typical values are at TA = 25°C.




electrical characteristics at specified free-air temperature, V CC+ = 5 V, VCC– = 0, VO = 1.4 V, VIC = 0(unless otherwise noted)

PARAMETER TEST CONDITIONS T †LT1014I LT1014DI

UNITPARAMETER TEST CONDITIONS TA†MIN TYP MAX MIN TYP MAX

UNIT



µV

IIO Input offset current25°C 0.2 2 0.2 2

nAIIO Input offset currentFull range 6 6

nA



nA


25°C0

to 3.5–0.3

to 3.80

to 3.5–0.3

to 3.8 VICR in ut voltage rangeFull range 0 to 3 0 to 3

Output low, No load 25°C 15 25 15 25

Output low, 25°C 5 10 5 10mV

M i k

,RL = 600 Ω to GND Full range 13 13

mV

VOMMaximum peakoutput voltage swing

Output low, Isink = 1 mA 25°C 220 350 220 350out ut voltage swing

Output high, No load 25°C 4 4.4 4 4.4

Output high, 25°C 3.4 4 3.4 4 Vg ,RL = 600 Ω to GND Full range 3.2 3.2

AVDLarge-signal differentialvoltage amplification

VO = 5 mV to 4 V,RL = 500 Ω 25°C 1 1 V/µV


mAICCy


† Full range is –40°C to 105°C.

operating characteristics, V CC+ = ±15 V, VIC = 0, TA = 25°CPARAMETER TEST CONDITIONS MIN TYP MAX UNIT




nV/√Hz







PARAMETERTEST

T †LT1014M LT1014AM LT1014DM

UNITPARAMETERCONDITIONS TA†

MIN TYP‡ MAX MIN TYP‡ MAX MIN TYP‡ MAXUNIT

VIOInput offset

RS = 50 Ω25°C 60 300 60 180 200 800

µVVIO voltageRS = 50 Ω

Full range 550 350 1000µV

VIO

Temperaturecoefficient ofinput offsetvoltage

Full range 0.5 2.5 0.5 2 0.5 2.5 µV/°C

Long-term driftof input offsetvoltage

25°C 0.5 0.5 0.5 µV/mo

IIOInput offset 25°C 0.15 1.5 0.15 0.8 0.15 1.5

nAIIO current Full range 5 2.8 5nA

IIBInput bias 25°C –12 –30 –12 –20 –12 –30

nAIIB current Full range –45 –30 –45nA

VICR

Common-modeinput voltage

25°C–15

to13.5

–15.3to

13.8

–15to

13.5

–15.3to

13.8

–15to

13.5

–15.3to

13.8 VICR grange

Full range–14.9to 13

–14.9to 13

–14.9to 13

VOM

Maximum peakoutput voltage RL = 2 kΩ

25°C ±12.5 ±14 ±13 ±14 ±12.5 ±14VVOM output voltage

swingRL = 2 kΩ

Full range ±11.5 ±12 ±11.5V

A

Large-signaldifferential

VO = ±10 V,RL = 600 Ω 25°C 0.5 2 0.8 2.2 0.5 2

V/ VAVDdifferentialvoltage VO = ±10 V, 25°C 1.2 8 1.5 8 1.2 8

V/µV

amplificationO ,

RL = 2 kΩ Full range 0.25 0.4 0.25

CMRRCommon-mode

VIC = –15 V to13.5 V

25°C 97 117 100 117 97 117

dBCMRRrejection ratio VIC = –14.9 V

to 13 VFull range 94 96 94

dB

kSVR

Supply-voltagerejection ratio

VCC± = ±2 V to 25°C 100 117 103 117 100 117dBkSVR rejection ratio

(∆VCC/∆VIO)

CC±±18 V Full range 97 100 97

dB

Channelseparation

VO = ±10 V,RL = 2 kΩ 25°C 120 137 123 137 120 137 dB

ridDifferential inputresistance

25°C 70 300 100 300 70 300 MΩ


25°C 4 4 4 GΩ

ICCSupply current 25°C 0.35 0.55 0.35 0.50 0.35 0.55

mAICCy

per amplifier Full range 0.7 0.6 0.7mA

† Full range is –55°C to 125°C.‡ All typical values are at TA = 25°C.




electrical characteristics at specified free-air temperature, V CC+ = 5 V, VCC– = 0, VO = 1.4 V, VIC = 0(unless otherwise noted)

PARAMETERTEST

T †LT1014M LT1014AM LT1014DM

UNITPARAMETERCONDITIONS TA†

MIN TYP MAX MIN TYP MAX MIN TYP MAXUNIT

RS = 50Ω25°C 90 450 90 280 250 950

VIOInput

RS = 50ΩFull range 400 1500 400 960 800 2000

µVVIO offset voltage RS = 50Ω,VIC = 0.1 V

125°C 200 750 200 480 560 1200

µV

IIOInput 25°C 0.2 2 0.2 1.3 0.2 2

IIO offset current Full range 10 7 10nA

IIBInput 25°C –15 –50 –15 –35 –15 –50

nA

IIB bias current Full range –120 –90 –120

VICR

Common-mode input

25°C0

to 3.5–0.3

to 3.80

to 3.5–0.3

to 3.80

to 3.5–0.3

to 3.8VVICR mode input

voltage range Full range0.1to 3

0.1to 3

0.1to 3

V

Output low,No load

25°C 15 25 15 25 15 25

Output low,RL 600Ω to

25°C 5 10 5 10 5 10mVRL = 600Ω to

GND Full range 18 15 18mV

VOMMaximumpeak outputvoltage swing

Output low,Isink = 1 mA

25°C 220 350 220 350 220 350

voltage swingOutput high,No load

25°C 4 4.4 4 4.4 4 4.4

Output high, 25°C 3.4 4 3.4 4 3.4 4 V

RL = 600Ω toGND

Full range 3.1 3.2 3.1

AVD

Large-signaldifferentialvoltageamplification

VO = 5 mV to 4 V,RL = 500Ω 25°C 1 1 1 V/µV

ICCSupply current 25°C 0.3 0.5 0.3 0.45 0.3 0.5

mAICCy

per amplifier Full range 0.65 0.55 0.65mA

† Full range is –55°C to 125°C.

operating characteristics, V CC± = ±15 V, VIC = 0, TA = 25°CPARAMETER TEST CONDITIONS MIN TYP MAX UNIT




nV/√Hz






TYPICAL CHARACTERISTICS

Table of GraphsFIGURE

VIO Input offset voltage vs Balanced source resistance 1

VIO Input offset voltage vs Free-air temperature 2

∆VIO Warm-Up Change in input offset voltage vs Elapsed time 3

IIO Input offset current vs Free-air temperature 4

IIB Input bias current vs Free-air temperature 5

VIC Common-mode input voltage vs Input bias current 6

AVD Differential voltage amplificationvs Load resistance 7, 8

AVD Differential voltage amplificationvs Frequency 9, 10

Channel separation vs Frequency 11

Output saturation voltage vs Free-air temperature 12

CMRR Common-mode rejection ratio vs Frequency 13

kSVR Supply-voltage rejection ratio vs Frequency 14

ICC Supply current vs Free-air temperature 15

IOS Short-circuit output current vs Elapsed time 16

Vn Equivalent input noise voltage vs Frequency 17

In Equivalent input noise current vs Frequency 17

VN(PP) Peak-to-peak input noise voltage vs Time 18

Pulse response (small signal) vs Time 19, 21

Pulse response (large signal) vs Time 20, 22, 23

Phase shift vs Frequency 9




TYPICAL CHARACTERISTICS †

Figure 1

Rs – Source Resistance – Ω

LT1014INPUT OFFSET VOLTAGE

vsBALANCED SOURCE RESISTANCE

– In

put O

ffset

Vol

tage

– m

V

1 k0.01

0.1

1

10

–+

TA = 25°C

VCC± = 5 VVCC– = 0

VIO

VCC± = ±15 VRS

RS

3 k 10 k 30 k 100 k 300 k 1 M 3 M 10 M

Figure 2

TA – Free-Air Temperature – °C

INPUT OFFSET VOLTAGEOF REPRESENTATIVE UNITS

vsFREE-AIR TEMPERATURE

VCC± = ±15 V

Vµ

– In

put O

ffset

Vol

tage

–V

IO

250

200

150

100

50

0

–50

–100

–150

–200

–250–50 –25 0 25 50 75 100 125

3

2

1

00 1 2 3

– C

hang

e in

Inpu

t Offs

et V

otla

ge – 4

t – Time After Power-On – min

WARM-UP CHANGE IN INPUT OFFSET VOLTAGEvs

ELAPSED TIME5

4 5

N Package

VCC± = ±15 VTA = 25°C

∆V

IO J Package

Vµ

Figure 3

0.2

0

INPUT OFFSET CURRENTvs

FREE-AIR TEMPERATURE1

0.4

0.6

0.8

VIC = 0

VCC± = ±2.5 V


VCC+ = 5 V, VCC– = 0

–50 –25 0 25 50 75 100 125

– In

put O

ffset

Cur

rent

– n

AI IO

VCC± = ±15 V

Figure 4

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.





Figure 5


INPUT BIAS CURRENTvs

FREE-AIR TEMPERATURE

VIC = 0

VCC = 5 V, VCC– = 0

VCC± = ±2.5 V

VCC± = ±15 V

– In

put B

ias

Cur

rent

– n

AI IB

–30

–25

–20

–15

–10

–5

0–50 –25 0 25 50 75 100 125

Figure 6

IIB – Input Bias Current – nA

COMMON-MODE INPUT VOLTAGEvs

INPUT BIAS CURRENT

TA = 25°C

VCC± = ±15 V(Left Scale) VCC+ = 5 V

VCC– = 0(Right Scale)

– C

omm

on-M

ode

Inpu

t Vol

tage

– V

VIC

15

10

5

0

–5

–10

–150 –5 –10 –15 –20 –25 –30

5

3

4

2

1

0

–1

– C

omm

on-M

ode

Inpu

t Vol

tage

– V

VIC

Figure 7

RL – Load Resistance – Ω

DIFFERENTIAL VOLTAGE AMPLIFICATIONvs

LOAD RESISTANCE

VCC± = ±15 VVO = ±10 V

TA = –55°C

TA = 25°C

TA = 125°C

Vµ

– D

iffer

entia

l Vol

tage

Am

pliv

icat

ion

– V

/A

VD

100 400 1 k 4 k 10 k

10

4

1

0.4

0.1

Figure 8


LOAD RESISTANCE

VCC+ = 5 V, VCC– = 0VO = 20 mV to 3.5 V

TA = –55°C

TA = 25°C

TA = 125°C

Vµ

– D

iffer

entia

l Vol

tage

Am

pliv

icat

ion

– V

/A

VD

RL – Load Resistance – Ω

100 400 1 k 4 k 10 k

10

4

1

0.4

0.1






Figure 9

f – Frequency – MHz

DIFFERENTIAL VOLTAGE AMPLIFICATIONAND PHASE SHIFT

vsFREQUENCY

AVD

VCC+ = 5 VVCC– = 0

VCC± = ±15 V

VIC = 0CL = 100 pFTA = 25°C

VCC+ = 5 VVCC– = 0

φ

VCC± = ±15 V

– D

iffer

entia

l Vol

tage

Am

pliv

icat

ion

– dB

AV

D

– P

hase

Shi

ft

20

10

0

–10

0.01 0.3 1 3 10

80°

100°100°

120°

140°

160°

180°

200°

220°

240°

Figure 10


FREQUENCY

VCC + = 5 VVCC – = 0

VCC± = ±15 V

CL = 100 pFTA = 25°C

– D

iffer

entia

l Vol

tage

Am

pliv

icat

ion

– dB

AV

D

f – Frequency – Hz

0.01 0.1 1 k 100 k 10 M1 10 100 10 k 1 M

0

–20

20

40

60

80

100

120

140

Figure 11

120

100

80

6010 100 1 k 10 k

Cha

nnel

Sep

arat

ion

– dB

140


CHANNEL SEPARATIONvs

FREQUENCY160

100 k 1 M

Limited byThermalInteraction

RL = 100 Ω

RL = 1 kΩ

Limited byPin-to-Pin

Capacitance

VCC± = ±15 VVI(PP) = 20 V to 5 kHzRL = 2 kΩTA = 25°C

Figure 12

Out

put S

atur

atio

n V

olta

ge –

V

OUTPUT SATURATION VOLTAGEvs



VCC+ = 5 V to 30 VVCC– = 0

Isink = 10 mA

Isink = 1 mA

Isink = 100 µA

Isink = 10 µA

Isink = 0

Isink = 5 mA

10

1

0.1

0.01–50 –25 0 25 50 75 100 125






Figure 13

60

40

20

010 100 1 k 10 k

CM

RR

– C

omm

on-M

ode

Rej

ectio

n R

atio

– d

B

80

100


COMMON-MODE REJECTION RATIOvs

FREQUENCY120

100 k 1 M

VCC+ = 5 VVCC– = 0

VCC± = ±15 V

TA = 25°C

Figure 14

0.1 1 10 100 1 k

SUPPLY-VOLTAGE REJECTION RATIOvs

FREQUENCY

10 k 100 k 1 M0

20

40

60

80

100

120

140


NegativeSupply

PositiveSupply

VCC± = ± 15 VTA = 25°C

– S

uppl

y-V

olta

ge R

ejec

tion

Rat

io –

dB

KS

VR

Figure 15

– S

uppl

y C

urre

nt P

er A

mpl

ifier

–


SUPPLY CURRENTvs


0 25 50 75 100 125260

300

340

380

420

460

VCC+ = 5 VVCC– = 0

VCC± = ±15 V

–25–50

Aµ

I CC

Figure 16

0 1

0

10

t – Time – min

SHORT-CIRCUIT OUTPUT CURRENTvs

ELAPSED TIME

20

2 3

30

40

TA = 25°C

TA = 125°C

TA = 25°C

TA = –55°C

TA = 125°C

VCC± = ±15 VTA = –55°C

–10

–20

–30

–40

– S

hort

-Circ

uit O

utpu

t Cur

rent

– m

AI O

S






Figure 17

100

1000

300

1 10


EQUIVALENT INPUT NOISE VOLTAGEAND EQUIVALENT INPUT NOISE CURRENT

vsFREQUENCY

30

10100

VCC± = ±2 V to ±18 VTA = 25°C

In

Vn

100

1000

300

30

101 k

1/f Corner = 2 Hz

– E

quiv

alen

t Inp

ut N

oise

Cur

rent

–

I nfA

/H

z

– E

quiv

alen

t Inp

ut N

oise

Vol

tage

–V

nfA

/H

z

Figure 18

1200

800

400

00 2 4 6

1600

t – Time – s

PEAK-TO-PEAK INPUT NOISE VOLTAGEOVER A 10-SECOND PERIOD

vsTIME

2000

8 10

VCC± = ±2 V to ±18 Vf = 0.1 Hz to 10 HzTA = 25°C

– N

oise

Vol

tage

– n

VV

N(P

P)

Figure 19

t – Time – µs

0

4 6 8 10

60

80

12 14

40

20

20

VCC± = ±15 VAV = 1TA = 25°C

VOLTAGE-FOLLOWER SMALL-SIGNALPULSE RESPONSE

vsTIME

–20

–40

–60

–80

– O

utpu

t Vol

tage

– m

VV

O

Figure 20

2

0 10 20 30

3

5

VOLTAGE-FOLLOWER LARGE-SIGNALPULSE RESPONSE

vsTIME

6

40 50 60 70

4

t – Time – µs

VCC+ = 5 VVCC– = 0VI = 0 to 4 VRL = 0AV = 1TA = 25°C

1

0

–1

–2

– O

utpu

t Vol

tage

– V

VO





Figure 21

t – Time – µs

60

40

0

0 20 40 60

80

120

VOLTAGE-FOLLOWER SMALL-SIGNALPULSE RESPONSE

vsTIME

140

80 100 120 140

20

100

160VCC+ = 5 VVCC– = 0VI = 0 to 100 mVRL = 600 Ω to GNDAV = 1TA = 25°C

–20

– O

utpu

t Vol

tage

– m

VV

O


vsTIME

Figure 22

t – Time – µs

2

1

0 10 20 30

3

5

6

40 50 60 70

0

4

VCC+ = 5 VVCC– = 0VI = 0 to 4 VRL = 4.7 kΩ to 5 VAV = 1TA = 25°C

–1

–2

– O

utpu

t Vol

tage

– m

VV

O

t – Time – µs

2

1

0 10 20 30

3

5

6

40 50 60 70

0

4

VCC+ = 5 VVCC– = 0VI = 0 to 4 VRL = 0AV = 1TA = 25°C


vsTIME

–1

–2

– O

utpu

t Vol

tage

– V

VO

Figure 23




APPLICATION INFORMATION

single-supply operation

The LT1014 is fully specified for single-supply operation (VCC– = 0). The common-mode input voltage rangeincludes ground, and the output swings within a few millivolts of ground.

Furthermore, the LT1014 has specific circuitry that addresses the difficulties of single-supply operation, bothat the input and at the output. At the input, the driving signal can fall below 0 V, either inadvertently or on atransient basis. If the input is more than a few hundred millivolts below ground, the LT1014 is designed to dealwith the following two problems that can occur:

1. On many other operational amplifiers, when the input is more than a diode drop below ground, unlimitedcurrent flows from the substrate (VCC– terminal) to the input, which can destroy the unit. On the LT1014,the 400-Ω resistors in series with the input (see schematic) protect the device even when the input is 5 Vbelow ground.

2. When the input is more than 400 mV below ground (at TA = 25°C), the input stage of similar type operationalamplifiers saturates, and phase reversal occurs at the output. This can cause lockup in servo systems.Because of unique phase-reversal protection circuitry (Q21, Q22, Q27, and Q28), the LT1014 outputs donot reverse, even when the inputs are at –1.5 V (see Figure 24).

However, this phase-reversal protection circuitry does not function when the other operational amplifier on theLT1014 is driven hard into negative saturation at the output. Phase-reversal protection does not work on anamplifier:

When 4’s output is in negative saturation (the outputs of 2 and 3 have no effect) When 3’s output is in negative saturation (the outputs of 1 and 4 have no effect) When 2’s output is in negative saturation (the outputs of 1 and 4 have no effect) When 1’s output is in negative saturation (the outputs of 2 and 3 have no effect)

At the output, other single-supply designs either cannot swing to within 600 mV of ground or cannot sink morethan a few microproamperes while swinging to ground. The all-npn output stage of the LT1014 maintains its lowoutput resistance and high gain characteristics until the output is saturated. In dual-supply operations, the outputstage is free of crossover distortion.

(a) VI(PP) = –1.5 V to 4.5 V (b) Output Phase ReversalExhibited by LM358

(c) No Phase ReversalExhibited by LT1014

– In

put V

olta

ge –

VV

I(P

P)

– O

utpu

t Vol

tage

– V

VO

– O

utpu

t Vol

tage

– V

VO

5

4

3

2

1

0

–1

–2

5

4

3

2

1

0

–1

5

4

3

2

1

0

–1

Figure 24. Voltage-Follower ResponseWith Input Exceeding the Negative Common-Mode Input Voltage Range





comparator applications

The single-supply operation of the LT1014 can be used as a precision comparator with TTL-compatible output.In systems using both operational amplifiers and comparators, the LT1014 can perform multiple duties (seeFigures 25 and 26).

Figure 25. Low-to-High-Level Output Responsefor Various Input Overdrives

100 mV

10 mV 5 mV 2 mV

Diff

eren

tial

Inpu

t Vol

tage

t – Time – µs

Overdrive

VCC+ = 5 VVCC– = 0TA = 25°C

– O

utpu

t Vol

tage

– V

VO

5

4

3

2

1

0

0 50 100 150 200 250 300 350 400 450

Figure 26. High-to-Low-Level Output Responsefor Various Input Overdrives

2 mV5 mV

100 mV

Overdrive

10 mV

Diff

eren

tial

Inpu

t Vol

tage

t – Time – µs

VCC+ = 5 VVCC– = 0TA = 25°C

– O

utpu

t Vol

tage

– V

VO

5

4

3

2

1

0

0 50 100 150 200 250 300 350 400 450

low-supply operation

The minimum supply voltage for proper operation of the LT1014 is 3.4 V (three Ni-Cad batteries). Typical supplycurrent at this voltage is 290 µA; therefore, power dissipation is only 1 mW per amplifier.

offset voltage and noise testing

Figure 30 shows the test circuit for measuring input offset voltage and its temperature coefficient. This circuitwith supply voltages increased to ±20 V is also used as the burn-in configuration.

The peak-to-peak equivalent input noise voltage of the LT1014 is measured using the test circuit shown inFigure 27. The frequency response of the noise tester indicates that the 0.1-Hz corner is defined by only onezero. The test time to measure 0.1-Hz to 10-Hz noise should not exceed 10 seconds, as this time limit acts asan additional zero to eliminate noise contribution from the frequency band below 0.1 Hz.

An input noise-voltage test is recommended when measuring the noise of a large number of units. A 10-Hz inputnoise-voltage measurement correlates well with a 0.1-Hz peak-to-peak noise reading because both results aredetermined by the white noise and the location of the 1/f corner frequency.

Noise current is measured by the circuit and formula shown in Figure 28. The noise of the source resistors issubtracted.





10 Ω

100 kΩ

0.1 µF

2 kΩ

4.7 µF

AVD = 50,000

24.3 kΩ

100 kΩ

0.1 µF

4.3 kΩ

2.2 µF

110 kΩ

22 µFOscilloscopeRin = 1 MΩ

NOTE A: All capacitor values are for nonpolarized capacitors only.

LT1014

+

– LT1001

+

–

Figure 27. 0.1-Hz to 10-Hz Peak-to-Peak Noise Test Circuit

10 kΩ

10 MΩ†

100 Ω Vn In V

no 2 (820 nV)212

40 M 100

† Metal-film resistor

10 MΩ†

10 MΩ† 10 MΩ†LT1014

+

–

Figure 28. Noise-Current Test Circuit and Formula

15 V

–15 V

VO = 1000 VIO100 Ω

(see Note A)

50 Ω(see Note A)

LT1014

+

–

50 Ω(see Note A)

NOTE A: Resistors must have low thermoelectric potential.

Figure 29. Test Circuit for V IO and αVIO





5 V

100 pF

2 kΩ

Q42N2222

Q32N2905

5 V

68 Ω

4.3 kΩ

LT10041.2 V

4 kΩ†

10 kΩ†1 kΩ4-mATrim

IN0 to 4 V

4-mA to 20-mA OUTTo Load2.2 kΩ Max

100 Ω†

10 Ω†

10 kΩ†

20-mATrim

80 Ω†

100 kΩ

5 V

0.33 µF

10 kΩ 820 Ω Q22N2905

SN74HC04 (6)

820 ΩQ12N2905

1N4002 (4)

10 µF10 µF

T1‡

0.002 µF

1/4LT1014

1/4LT1014

† 1% film resistor. Match 10-kΩ resistors 0.05%.‡ T1 = PICO-31080

+

±

+

±

++

10 kΩ 10 kΩ

Figure 30. 5-V Powered, 4-mA to 20-mA Current-Loop Transmitter With 12-Bit Accuracy





ToInverter

Driver

5 V100 kΩ

10 kΩ†

68 kΩ†

4.3 kΩ5 V

LT10041.2 V

4 kΩ†

2 kΩ4-mATrim

IN0 to 4 V

1 kΩ20-mATrim

301 Ω†

0.1 Ω T1

10 µF

4-mA to 20-mA OUTFully Floating

1N4002 (4)

† 1% film resistor

+

–1/4

LT1014

1/4LT1014

+

–

+

Figure 31. Fully Floating Modification to 4-mA to 20-mA Current-Loop Transmitter With 8-Bit Accuracy

IN+

IN–

5 V

OUT A

R2

R1

1 µF1 µF

1/2 LTC1043

NOTE A: VIO = 150 µV, AVD = (R1/R2) + 1, CMRR = 120 dB, VICR = 0 to 5 V

1/4LT1014

+

–

6

18 15

5

6

8

4

72

3

IN+

IN–

OUT B

R2

R1

1 µF1 µF

1/2 LTC1043

1/4LT1014

+

–

7

13 14

3

2

111

12

5

8

0.01 µF

Figure 32. 5-V Single-Supply Dual Instrumentation Amplifier





To InputCable Shields

RG (2 kΩ Typ)

200 kΩ

10 kΩ

10 kΩ†

10 kΩ†

OUT

20 kΩ

20 kΩ

200 kΩ†

5 V

IN–

IN+

1 µF

‡

† † 1% film resistor. Match 10-kΩ resistors 0.05%.‡ For high source impedances, use 2N2222 as diodes (with collector connected to base).NOTE A: AVD = (400,000/RG) + 1

LT1014

+

–

LT1014

–

+

LT1014

–

+

LT1014

–

+

5 V

‡

10 kΩ

10 kΩ†

5 V

10 kΩ†2

3

6

5

‡

‡

1

7

10

9

13

12

14

8

4

11

Figure 33. 5-V Powered Precision Instrumentation Amplifier

PACKAGING INFORMATION

Orderable Device Status (1) PackageType

PackageDrawing

Pins PackageQty

Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)

5962-89677012A ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type

5962-8967701CA ACTIVE CDIP J 14 1 TBD A42 SNPB N / A for Pkg Type

5962-89677022A ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type

5962-8967702CA ACTIVE CDIP J 14 1 TBD A42 SNPB N / A for Pkg Type

LT1014AMFKB ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type

LT1014AMJ ACTIVE CDIP J 14 1 TBD A42 SNPB N / A for Pkg Type

LT1014AMJB ACTIVE CDIP J 14 1 TBD A42 SNPB N / A for Pkg Type

LT1014CN ACTIVE PDIP N 14 25 Pb-Free(RoHS)

CU NIPDAU N / A for Pkg Type

LT1014CNE4 ACTIVE PDIP N 14 25 Pb-Free(RoHS)


LT1014DDW ACTIVE SOIC DW 16 40 Green (RoHS &no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

LT1014DDWE4 ACTIVE SOIC DW 16 40 Green (RoHS &no Sb/Br)


LT1014DDWG4 ACTIVE SOIC DW 16 40 Green (RoHS &no Sb/Br)


LT1014DDWR ACTIVE SOIC DW 16 2000 Green (RoHS &no Sb/Br)


LT1014DDWRE4 ACTIVE SOIC DW 16 2000 Green (RoHS &no Sb/Br)


LT1014DDWRG4 ACTIVE SOIC DW 16 2000 Green (RoHS &no Sb/Br)


LT1014DIDW ACTIVE SOIC DW 16 40 Green (RoHS &no Sb/Br)


LT1014DIDWG4 ACTIVE SOIC DW 16 40 Green (RoHS &no Sb/Br)


LT1014DIDWR ACTIVE SOIC DW 16 2000 Green (RoHS &no Sb/Br)


LT1014DIDWRG4 ACTIVE SOIC DW 16 2000 Green (RoHS &no Sb/Br)


LT1014DIN ACTIVE PDIP N 14 25 Pb-Free(RoHS)


LT1014DINE4 ACTIVE PDIP N 14 25 Pb-Free(RoHS)


LT1014DMDW ACTIVE SOIC DW 16 40 TBD CU NIPDAU Level-1-220C-UNLIM

LT1014DMDWG4 ACTIVE SOIC DW 16 40 Green (RoHS &no Sb/Br)


LT1014DN ACTIVE PDIP N 14 25 Pb-Free(RoHS)


LT1014DNE4 ACTIVE PDIP N 14 25 Pb-Free(RoHS)


LT1014IN OBSOLETE PDIP N 14 TBD Call TI Call TI

LT1014MFKB ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type

LT1014MJ ACTIVE CDIP J 14 1 TBD A42 SNPB N / A for Pkg Type

LT1014MJB ACTIVE CDIP J 14 1 TBD A42 SNPB N / A for Pkg Type

(1) The marketing status values are defined as follows:

PACKAGE OPTION ADDENDUM

www.ti.com 20-Nov-2008

Addendum-Page 1

ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part ina new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please checkhttp://www.ti.com/productcontent for the latest availability information and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirementsfor all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be solderedat high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die andpackage, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHScompatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flameretardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak soldertemperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it isprovided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to theaccuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to takereasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis onincoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limitedinformation may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TIto Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF LT1014D :

• Enhanced Product: LT1014D-EP

NOTE: Qualified Version Definitions:

• Enhanced Product - Supports Defense, Aerospace and Medical Applications

PACKAGE OPTION ADDENDUM

www.ti.com 20-Nov-2008

Addendum-Page 2

http://www.ti.com/productcontent

http://focus.ti.com/docs/prod/folders/print/lt1014d-ep.html

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0 (mm) B0 (mm) K0 (mm) P1(mm)

W(mm)

Pin1Quadrant

LT1014DDWR SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1

LT1014DIDWR SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 11-Mar-2008

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LT1014DDWR SOIC DW 16 2000 346.0 346.0 33.0

LT1014DIDWR SOIC DW 16 2000 346.0 346.0 33.0

PACKAGE MATERIALS INFORMATION

www.ti.com 11-Mar-2008

Pack Materials-Page 2

MECHANICAL DATA

MLCC006B – OCTOBER 1996

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

FK (S-CQCC-N**) LEADLESS CERAMIC CHIP CARRIER

4040140/D 10/96

28 TERMINAL SHOWN

B

0.358(9,09)

MAX

(11,63)

0.560(14,22)

0.560

0.458

0.858(21,8)

1.063(27,0)

(14,22)

ANO. OF

MINMAX

0.358

0.660

0.761

0.458

0.342(8,69)

MIN

(11,23)

(16,26)0.640

0.739

0.442

(9,09)

(11,63)

(16,76)

0.962

1.165

(23,83)0.938

(28,99)1.141

(24,43)

(29,59)

(19,32)(18,78)

**

20

28

52

44

68

84

0.020 (0,51)

TERMINALS

0.080 (2,03)0.064 (1,63)

(7,80)0.307

(10,31)0.406

(12,58)0.495

(12,58)0.495

(21,6)0.850

(26,6)1.047

0.045 (1,14)

0.045 (1,14)0.035 (0,89)

0.035 (0,89)

0.010 (0,25)

121314151618 17

11

10

8

9

7

5

432

0.020 (0,51)0.010 (0,25)

6

12826 27

19

21B SQ

A SQ22

23

24

25

20

0.055 (1,40)0.045 (1,14)

0.028 (0,71)0.022 (0,54)

0.050 (1,27)

NOTES: A. All linear dimensions are in inches (millimeters).B. This drawing is subject to change without notice.C. This package can be hermetically sealed with a metal lid.D. The terminals are gold plated.E. Falls within JEDEC MS-004

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Buyers acknowledge and agree that, if they use any non-designatedproducts in automotive applications, TI will not be responsible for any failure to meet such requirements.Following are URLs where you can obtain information on other Texas Instruments products and application solutions:Products ApplicationsAmplifiers amplifier.ti.com Audio www.ti.com/audioData Converters dataconverter.ti.com Automotive www.ti.com/automotiveDSP dsp.ti.com Broadband www.ti.com/broadbandClocks and Timers www.ti.com/clocks Digital Control www.ti.com/digitalcontrolInterface interface.ti.com Medical www.ti.com/medicalLogic logic.ti.com Military www.ti.com/militaryPower Mgmt power.ti.com Optical Networking www.ti.com/opticalnetworkMicrocontrollers microcontroller.ti.com Security www.ti.com/securityRFID www.ti-rfid.com Telephony www.ti.com/telephonyRF/IF and ZigBee® Solutions www.ti.com/lprf Video & Imaging www.ti.com/video

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Quad Precision Operational Amplifiers (Rev. C PRECISION OPERATIONAL AMPLIFIERS ... Texas Instruments semiconductor products and disclaimers thereto appears at the end of this ... Q6