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Progress of the Forward Calorimeter R&D. Presented by: Igor Emeliantchik. Progress of the Forward Calorimeter R&D. LCAL Status D iamond- T ungsten Version Results of Zeuthen Group First Results of Minsk Group Heavy Crystal Version LAT Status Silicon Sensors Results of Prague Group - PowerPoint PPT Presentation
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Progress of the Forward Calorimeter R&D
Presented by: Igor Emeliantchik
DESY Zeuthen: R. Dollan
D. Drachenberg,
E. Kouznetsova,
W. Lange,
W. Lohmann
NC PHEP, Minsk: K. Afanaciev,
I. Emeliantchik
Institute of Physics, AS CR, Prague: M. Tomášek,
V. Vrba
Instytut Fizyki UJ, Cracow: J. ZachorowskiInstytut Fizyki Jądrowej PAN, Cracow: W. Wierba
Progress of the Forward Calorimeter R&D
• LCAL Status– Diamond-Tungsten Version
• Results of Zeuthen Group• First Results of Minsk Group
– Heavy Crystal Version
• LAT Status– Silicon Sensors
• Results of Prague Group• Zeuthen Silicon Facilities
– Laser measurement of the LATdetector displacement
Block Diagram of the Experimental Setup
CAMAC
Metal Box
90Sr or 241Am, 104 Bq
Diamond
Peak sensing ADC Polon 712
Computer
CSP “Tetrod”
Shaper Amplifier
Con
tro
ller
KK
Diamond Measurements by Minsk Group
-1400
-1000
-600
-200
200
-900 -700 -500 -300 -100 100 300 500 700 900 1100
U,V
I,pA
Cdiamond = 24 pF (measured with E 7-12 measurement bridge)
Freiburg Diamond FAP_4_2
Current vs HV (measured with V7-49 picoampermeter)
Alpha Spectra for Freiburg Diamond FAP_4_2.
Irradiated with 241Am
on the substrate side
Irradiated with 241Am
on the growth side
-800
-400
0
400
800
1200
-700 -500 -300 -100 100 300 500 700
U,V
I,n
A
Cdiamond = 1.3 pF (measured with E 7-12 measurement bridge)
Minsk Diamond
Current vs HV (measured with V7-49 picoampermeter)
Cross section
Bottom view
Active area cca 0.25 cm2
Preprototype Silicon Sensors (Prague) Sensor Structure
I-V on Diode w ith guard rings
0
5
10
15
20
25
0 100 200 300 400 500 600 700 800 900 1000
Bias [V]
Curr
ent [n
A] @
20C
2841413_IVD16_70.txt2841522_IVD16_70.txt2869709_IVD16_70.txt2A8221_IVD16_70.txt
2A9321_IVD16_70.txt
I-V curves:Vbreak-down VopIleak @ Vop < cca 30 nA/cm2 nornalized for temperature 20 C
C-V on Diode w ith guard rings
0
10
20
30
40
50
60
70
-200-150-100-500
Bias [V]
Cap
acit
an
ce [
pF
]
2841413_CVD16_70.txt
2841522_CVD16_70.txt
2869709_CVD16_70.txt
2A8221_CVD16_70.txt
2A9321_CVD16_70.txt
Vfull-depletion: substrate resistivity calculation
used frequency 10 kHz
Wolfgang Lange, DESY Zeuthen: Silicon Detector Projects Kraków, 10-Oct-
2003
Zeuthen Silicon Facilities
At DESY Zeuthen we are able to perform (class 10k clean room):
- Ultrasonic wire bonding (Au, Al, down to 17.5 µm wires)- Glueing with high mechanical precision and/or special hardening procedures (silver epoxies)- Measurements of single and double sided sensors on different probe stations- long term measurements (darkness, special atmosphere: N2 or similar)- chip testing (delivered probe cards can be adapted) additional: electronics workshop with automatic SMD placement and soldering tools
mechanical workshop with NC machining/millingat DESY Hamburg a ‘state of the art’ programmable wire bonder
Companies / Institutions we are used to work with:
- Sensors: CiS Erfurt (D), Micron Ltd. (UK), SINTEF Oslo (N), Hamamatsu (J)- chip design: IDE AS, Oslo (N) and ASIC Laboratory of University of Heidelberg (D)- probe cards: Wentworth Deutschland GmbH, München (D)- high precision printed circuit boards: Würth GmbH, Roth am See (D), Optiprint (CH)- thick film hybrids: Elbau GmbH, Berlin (D)
Position Measurement with Laser and CCD Camera (Cracow)Position Measurement with Laser and CCD Camera (Cracow)
Position measurement
0 100 200 300 400 500 600 700 800 900 1000100
110
120
130
140
150
160
170
180
190
200
210
220
cent
er p
ositi
on [p
ixer
s]
camera position [um]
(1) (2)
Linear Regression for direkt_B:Y = A + B * X
Parameter Value Error------------------------------------------------------------A 92,57067 0,72927B 0,12727 0,00128------------------------------------------------------------