Progress of ALD Group for MCP

Qing Peng, Anil U. Mane, Jeffery W. Elam

Argonne National Laboratory

Third week of September 2009

Aluminum doped Zinc Oxide (AZO) growth rate at different conditions

Results: At 200C, with O3 chemistry AZO growth rate is smaller than the growth rate with H2O chemistry for same cycle conditions.For H2O chemistry, AZO growth rate is smaller at 200C than at 177C

1/5/1/5 s, 20% ALO cycle

Diethyl Zinc

Trimethyl Aluminum

Results of AZO coated MCP Purpose: ALD2 system, coat AZO onto MCP with Si wafers as the control sample. Conditions

• Reaction temperature: 177C• Substrate:

Silicon with unknown resistivity, treated by Acetone/IPA, Then O3 for ~3 minutes.

MCP treated with O3 for ~3 minutes• Cycle conditions (dose/purge/dose/purge): 1/5/1/5 s for both Al2O3 and ZnO, • Cycle Numbers: 800 Cycles• Reactants: TMA/H2O for Al2O3, DEZ/H2O for ZnO. • Substrates: MCP 33 in diameter, IPN: 300-2592-A, polished AND Si wafers

with unknown resistivity

Uncoated MCP

MCP100nm AZO

MCP+100nm AZO+Cr 5nm+Au 50nm

Mercury probe and Pico-ammeter is set up for measuring high resistant

Work has been done:

1)ALD process for AZO is carrying out,2)Mercury probe and pico-ammeter for resistant measurement set up3)Low resistivity Si wafer ordered4)Sample holder for electrode coating is designed.

Work for near future:

1)Systematic study of ALD process for AZO for the optimal material property.2)Automatic measuring system for resistance