PIL APG-ABD/14/8600 Dated 01 Aug 2014Note: This report is a summary of the reliability trials performed in good faith by STMicroelectronics in order to evaluate the potential reliability

PIL APG-ABD/14/8600Dated 01 Aug 2014

TDA7576B (UK24) : Large window leadframe implementation

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PRODUCT INFORMATIONLETTER®

PIL APG-ABD/14/8600 - Dated 01 Aug 2014

Sales Type/product family label TDA7576B

Type of change Package assembly material change

Reason for change Quality Improvement

Description Please be informed that we are going to implement on TDA7576B (UK24)a new large window leadframe.

Forecasted date of implementation 09-Aug-2014

Forecasted date of samples for customer 25-Jul-2014

Forecasted date for STMicroelectronicschange Qualification Plan results availability 25-Jul-2014

Involved ST facilities ST Bouskoura (Morocco)

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PIL APG-ABD/14/8600 - Dated 01 Aug 2014

DOCUMENT APPROVAL

Name Function

Scarcelli, Valeria Marketing Manager

Celant, Luca Product Manager

Pintus, Alberto Q.A. Manager

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TDA7576B (UK24) : Large window leadframe implementation

WHAT:

Please be informed that we are going to implement on TDA7576B (UK24) a new large window leadframe.

WHY:

Quality improvement

HOW:

WHEN:

We are ready to implement the change upon from wk32-2014 onward.

See qualification report (RR005414CS2039), and below the frame comparison

Report ID: RR005414CS2039

Author: Daniele Bini

Approved: Giacomo Burrone

Date: Castelletto, June 20th, 2014

Note: This report is a summary of the reliability trials performed in good faith by STMicroelectronics in order to evaluate the potential reliability risks during the product life using a set of defined test methods. This report does not imply for STMicroelectronics expressly or implicitly any contractual obligations other than as set forth in STMicroelectronics general terms and conditions of Sale. This report and its contents shall not be disclosed to a third party without previous written agreement from STMicroelectronics.

TDA7576B Dual channel 24V power amplifier

Reliability Report

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TABLE OF CONTENTS

1 RELIABILITY EVALUATION OVERVIEW ................................................................................................... 3 1.1 OBJECTIVES .............................................................................................................................................. 3 1.2 CONCLUSION ............................................................................................................................................. 4

2 DEVICE CHARACTERISTICS ......................................................................................................................... 5 2.1 DEVICE DESCRIPTION ................................................................................................................................. 5 2.2 BLOCK DIAGRAM ........................................................................................................................................ 6 2.3 CONSTRUCTION NOTE ................................................................................................................................ 7

2.3.1 Wafer fabrication information ................................................................................................... 7 2.3.2 Assembly information .................................................................................................................. 7 2.3.3 Final Testing & Reliability Information ...................................................................................... 7

3 RELIABILITY TESTS RESULTS .................................................................................................................... 8 3.1 RELIABILITY TEST PLAN AND RESULTS SUMMARY ..................................................................................... 10

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1 RELIABILITY EVALUATION OVERVIEW

1.1 Objectives

The purpose of this document is to describe the reliability qualification trials, the results and the criteria used to evaluate TDA7576B product after replacing the small window lead-frame with large window lead-frame.

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The qualification plan:

AEC Q100 Group A Group B Group C Group D Group E

Test Name

THB

AC

TC

PTC

HTS

L

HTO

L

ELFR

EDR

WB

P

WB

S

SD

PD

SBS

LI

EM

TDD

B

HC

I

NB

TI

SM

HB

M

CD

M

LU

ED

CH

AR

GL

EMC

SC

SER

ASSEMBLY

Lead-frame dimension M

M = PTC covered by TC stress test.

1.2 Conclusion

All reliability tests have been completed with positive results neither functional nor parametric rejects were detected at final electrical testing.

The Wire Bond Pull/Shear tests (WBP, WBS) as Package Assembly Integrity (test Group C) pointed out neither abnormal break loads nor forbidden failure modes both before and after stress test.

Based on the overall positive results we consider the product qualified from a reliability point of view.

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2 DEVICE CHARACTERISTICS

2.1 Device description

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2.2 Block Diagram

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2.3 Construction note

2.3.1 Wafer fabrication information

TDA7576B TDA7576B Function: Dual channel 24V power

Amplifier Dual channel 24V power

Amplifier Internal name: I8V2*UK24BB1 K8V2*UK24BB1

Diffusion process: BCD5S 70V BCD5S 70V Diffusion plant: AG8 AG8

Wafer size [inches]: 8“ 8“ Wafer thickness [μm]: 280 280

Die sizes [mm2]: 5.810 x 3.625 5.810 x 3.625 Passivation: Teos + PTeos + SiOn + PIX Teos + PTeos + SiOn + PIX

Back finishing: Cr/NiV/Au Cr/NiV/Au Pad Metallization[μm]: Ti/AlCu, 3.00 Ti/AlCu 3,00

2.3.2 Assembly information

TDA7576B TDA7576B Function: Dual channel 24V power

Amplifier Dual channel 24V power

Amplifier Package line: Multiwatt 15L Multiwatt 15L

Assembly plant: BOUSKOURA BOUSKOURA Wires [mils]: Cu, 2 Cu, 2

Resin: SUMITOMO 6300HR SUMITOMO 6300HR Die Attach: Soft solder Soft solder

Frame: FRAME MW 15L Cu stdL lWin SpAg 1

FRAME MW 15L Cu stdL meWin SpAg 2

Lead Finishing: Tin Tin

1) lWin = LARGE WINDOW2) meWin = small WINDOW

2.3.3 Final Testing & Reliability Information Electrical testing

manufacturing plant: AGRATE AGRATE

Reliability test execution plant:

CASTELLETTO CASTELLETTO

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3 RELIABILITY TESTS RESULTS

Test Name Description Purpose

HTOL

The device is stressed in dynamic configuration, approaching the operative max. ratings in terms of junction temperature, load current, internal

power dissipation.

To simulate the worst-case application stress conditions. The typical failure modes are related

to electro-migration, wire-bonds degradation, oxide faults.

HTRB

The device is stressed in static configuration, approaching the absolute ratings in terms of

junction temperature and supply voltage minimizing the power dissipation

To maximize the electrical field across either junctions or dielectric layers, in order to

investigate the failure modes linked to mobile contamination, oxide ageing, and lay-out sensitivity

to surface effects

ESD The device is submitted to a high voltage peak on

all his pins simulating ESD stress according to different simulation models.

To classify the device according to his susceptibility to damage or degradation by

exposure to electrostatic discharge.

LU

The device is submitted to a direct current forced/sunk into the input/output pins. Removing the direct current no change in the supply current

must be observed.

To verify the presence of bulk parasitic effect inducing latch-up.

PC The device is submitted to a typical temperature

profile used for surface mounting devices , after a controlled moisture absorption

As stand-alone test: to investigate the moisture sensitivity level.

As preconditioning before other reliability tests: to verify that the surface mounting stress does

not impact on the subsequent reliability performance.

The typical failure modes are "pop corn" effect and delamination.

TC The device is submitted to cycled temperature excursions, between a hot and a cold chamber in

air atmosphere.

To investigate failure modes related to the thermo-mechanical stress induced by the

different thermal expansion of the materials interacting in the die-package system. Typical

failure modes are linked to metal displacement, dielectric cracking, molding compound

delamination, wire-bonds failure, die-attach layer degradation.

AC The device is stored in saturated steam, at fixed

and controlled conditions of pressure and temperature.

To investigate corrosion phenomena affecting die or package materials, related to chemical contamination and package hermeticity.

THB

The device is biased in static configuration minimizing its internal power dissipation, and stored at controlled conditions of ambient

temperature and relative humidity

To evaluate the package moisture resistance with electrical field applied, both electrolytic and

galvanic corrosion are put in evidence

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Test Name Description Purpose

HTSL

The device is stored in unbiased condition at the max. Temperature allowed by the package materials, sometimes higher than the max.

operative temperature

To investigate the failure mechanisms activated by high temperature, typically wire-bonds solder joint ageing, data retention faults, metal stress-

voiding

WBP

The wire is submitted to a pulling force (approximately normal to the surface of the die)

able to achieve wire break or interface separation between ball/pad or stitch/lead.

To investigate and measure the integrity and robustness of the interface between wire and die

or lead metallization

WBS

The ball bond is submitted to a shear force (parallel to the pad area) able to cause the

separation of the bonding surface between ball bond and pad area.

To investigate and measure the integrity and robustness of the bonding surface between ball

bond and pad area.

PTC

The device is stressed in dynamic configuration approaching the operative conditions with an

alternate exposure at high and low temperature extremes.

To simulate the actual combination of environmental stresses interacting in the field application. The typical failure modes are those

reported for HTOL and TC

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3.1 Reliability test plan and results summary

1. No delamination at SAM inspection2. Test preceded by 100 thermal cycling for robustness evaluation. 3. Wire bonding strength of 2 mil Cu wires on TDA7576B has been successfully verified through wire pull and ball shear test in compliance with AEC-

Q100 sampling and acceptance criteria (min. 30 bonds from 5 devices).

Test Conditions Duration Sample size TDA7576B (L1) TDA7576B (L1) TDA7576B (L1) Note

TC Ta=-50°/150°C, unbiased 1000c 77 x 3L 0/77 0/77 0/77 1, 3 EC Ta=121ºC, P=2atm 96h 77 x 3L 0/77 0/77 0/77 2

HTSL Ta=150°C, unbiased 1000h 45 x 3L 0/45 0/45 0/45 3 WBP MIL STD883 Method 2011 - - PASSED PASSED PASSED 3 WBS AEC-Q100-001 - - PASSED PASSED PASSED 3

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Public Products List®

PIL Title : TDA7576B (UK24) : Large window leadframe implementation PIL Reference : APG-ABD/14/8600 PIL Created on : 05-AUG-2014

Subject : Public Products List

Dear Customer,

Please find below the Standard Public Products List impacted by the change:

ST COMMERCIAL PRODUCT

TDA7576B

1/1

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Documents

PIL APG-ABD/14/8600 Dated 01 Aug 2014Note: This report is a summary of the reliability trials performed in good faith by STMicroelectronics in order to evaluate the potential reliability