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PIC24FJ256GA412/GB412 FAMILYPIC24FJ256GA412/GB412 Family Flash Programming Specification
1.0 DEVICE OVERVIEWThis document defines the programming specificationfor the PIC24FJ256GA412/GB412 family of 16-bitmicrocontrollers with Dual Partition Flash mode func-tionality. This programming specification is requiredonly for those developing programming support for thefollowing devices:
Customers using only one of these devices should usethe development tools that already provide support fordevice programming.
Topics covered include:
• Section 1.0 “Device Overview”• Section 2.0 “Programming Overview”• Section 3.0 “Device Programming – ICSP”• Section 4.0 “Device Programming – Enhanced
ICSP”• Section 5.0 “Programming the Programming
Executive to Memory”• Section 6.0 “The Programming Executive”• Section 7.0 “Dual Partition Flash
Programming Considerations”• Section 8.0 “Device ID”• Section 9.0 “Checksum Computation”• Section 10.0 “AC/DC Characteristics and
Timing Requirements”
• PIC24FJ256GB412 • PIC24FJ256GA412• PIC24FJ128GB412 • PIC24FJ128GA412• PIC24FJ64GB412 • PIC24FJ64GA412• PIC24FJ256GB410 • PIC24FJ256GA410• PIC24FJ128GB410 • PIC24FJ128GA410• PIC24FJ64GB410 • PIC24FJ64GA410• PIC24FJ256GB406 • PIC24FJ256GA406• PIC24FJ128GB406 • PIC24FJ128GA406• PIC24FJ64GB406 • PIC24FJ64GA406
2015-2019 Microchip Technology Inc. DS30010073D-page 1
PIC24FJ256GA412/GB412 FAMILY
2.0 PROGRAMMING OVERVIEWThere are two methods of programming that arediscussed in this programming specification:
• In-Circuit Serial Programming™ (ICSP™)• Enhanced In-Circuit Serial Programming
The ICSP programming method is the most directmethod to program the device; however, it is also theslower of the two methods. It provides native, low-levelprogramming capability to erase, program and verifythe device.
The Enhanced ICSP protocol uses a faster method thattakes advantage of the Programming Executive (PE), asillustrated in Figure 2-1. The PE provides all thenecessary functionality to erase, program and verify thechip through a small command set. The command setallows the programmer to program a PIC24FJ256GA412/GB412 family device without dealing with the low-levelprogramming protocols.
FIGURE 2-1: PROGRAMMING SYSTEM OVERVIEW FOR ENHANCED ICSP™
This programming specification is divided into twomajor sections that describe the programming methodsindependently. Section 3.0 “Device Programming –ICSP” describes the ICSP method. Section 4.0“Device Programming – Enhanced ICSP” describesthe Enhanced ICSP method.
2.1 Required ConnectionsThese devices require specific connections forprogramming to take place. These connections includepower, VCAP, MCLR and one programming pair (PGEDx/PGECx). Table 2-1 describes these connections (refer tothe specific device data sheet for pin descriptions andpower connection requirements).
2.2 Power RequirementsAll PIC24FJ256GA412/GB412 family devices powertheir core digital logic at a nominal 1.8V. To simplifysystem design, all devices in the PIC24FJ256GA412/GB412 family incorporate an on-chip regulator thatallows the device to run its core logic from VDD.
The regulator provides power to the core from the otherVDD pins. A low-ESR capacitor (such as ceramic ortantalum) must be connected to the VCAP pin (seeTable 2-1 and Figure 2-2). This helps to maintain thestability of the regulator. The specifications for corevoltage and capacitance are listed in Section 10.0 “AC/DC Characteristics and Timing Requirements”.
FIGURE 2-2: CONNECTIONS FOR THE ON-CHIP REGULATOR
TABLE 2-1: PINS USED DURING PROGRAMMING
PIC24FJ256GA412/GB412
Programmer ProgrammingExecutive
On-Chip Memory
VDD
VCAP
VSS
PIC24FJ256GA412/GB412
CEFC
3.3V
(10 µF typ)
Pin Name Pin Type Pin Description
MCLR I Programming EnableVDD and AVDD(1) P Power Supply(1)
VSS and AVSS(1) P Ground(1)
VCAP P On-Chip Voltage Regulator Filter CapacitorPGECx I Programming Pin Pair: Serial Clock PGEDx I/O Programming Pin Pair: Serial Data Legend: I = Input O = Output P = PowerNote 1: All power supply and ground pins must be connected, including AVDD and AVSS. It is also recommended
to connect the VBAT pin to the battery or VDD during programming.
DS30010073D-page 2 2015-2019 Microchip Technology Inc.
PIC24FJ256GA412/GB412 FAMILY
2.3 Pin DiagramsFigure 2-3 through Figure 2-7 show the pin diagramsfor the PIC24FJ256GA412/GB412 family. The pins thatare required for programming are listed in Table 2-1and are indicated in bold text in the figures. Refer to theappropriate device data sheet for complete pindescriptions.
2.3.1 PGECx AND PGEDx PIN PAIRSAll devices in the PIC24FJ256GA412/GB412 familyhave three separate pairs of programming pins, labeledas PGEC1/PGED1, PGEC2/PGED2 and PGEC3/PGED3. Any one of these pin pairs may be used fordevice programming by either ICSP or Enhanced ICSP.Unlike voltage supply and ground pins, it is notnecessary to connect all three pin pairs to program thedevice. However, the programming method must useboth pins of the same pair.
FIGURE 2-3: PIN DIAGRAMS
Legend: Shaded pins indicate pins tolerant to up to +5.5 VDC.Note 1: It is recommended to connect the metal pad on the bottom of the 64-pin QFN package to VSS.
2: A pull-up resistor is connected to this pin during power-up and programming.
64-Pin TQFP 64-Pin QFN(1)
2
3
4
5
67
8
9
10
11
12
13
14
15
16
48
47
22
44
24 25 26 27 28 29 30 31 32
1
46
45
23
43
42
41
40
39
63 62 61 5960 58 57 56 5455 53 52 51 4950
38
37
34
36
35
33
17 19 20 211864
VDDVSS
RG9MCLR
RG8RG7RG6RE7RE6RE5
PGEC3/RB5PGED3/RB4
RB3RB2
PGEC1/RB1PGED1/RB0
OSCI/CLKI/RC12
OSCO/RC15
VSSRD8RD9RD10RD11RD0SOSCI/RC13SOSCO/RC14
VDDRG2RG3RF6RF2RF3
VDD
VSS
RB
11R
B10(
2)R
B9R
B8AV
SS
AVD
D
PGED
2/R
B7PG
EC2/
RB6
RB
12R
B13
RB
14R
B15
RF4
RF5
RD
7V C
AP
VB
AT
RF0
RF1
RE
0R
E1
RE
2R
E3
RE
4
RD
6R
D5
RD
4R
D3
RD
2R
D1
PIC24FJXXXGA406
2015-2019 Microchip Technology Inc. DS30010073D-page 3
PIC24FJ256GA412/GB412 FAMILY
FIGURE 2-4: PIN DIAGRAMS (CONTINUED)
Legend: Shaded pins indicate pins tolerant to up to +5.5 VDC. Note 1: It is recommended to connect the metal pad on the bottom of the 64-pin QFN package to VSS.
2: PIC24FJ256GB406 devices use VUSB3V3 instead of RF6 and VBUS/RF7 instead of RF2.3: A pull-up resistor is connected to this pin during power-up and programming.
64-Pin TQFP 64-Pin QFN(1)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
48
4722
44
24 25 26 27 28 29 30 31 32
1
46
45
23
43
42
41
40
39
63 62 61 5960 58 57 56 5455 53 52 51 4950
38
37
34
36
35
33
17 19 20 211864
VDDVSS
RG9MCLR
RG8RG7RG6RE7RE6RE5
PGEC3/RB5PGED3/RB4
RB3RB2
PGEC1/RB1PGED1/RB0
OSCI/CLKI/RC12OSCO/RC15VSSRD8RD9RD10RD11RD0SOSCI/RC13SOSCO/RC14
VDD D+/RG2D-/RG3VUSB3V3(2)
VBUS/RF7(2)
RF3
VDD
VSS
RB
11R
B10
(3)
RB
9R
B8
AVSS
AVD
DPG
ED2/
RB
7PG
EC2/
RB
6
RB
12R
B13
RB
14R
B15
RF4
RF5
RD
7VC
AP
VB
AT
RF0
RF1
RE
0R
E1
RE
2R
E3
RE
4
RD
6R
D5
RD
4R
D3
RD
2R
D1
PIC24FJXXXGB406
DS30010073D-page 4 2015-2019 Microchip Technology Inc.
PIC24FJ256GA412/GB412 FAMILY
FIGURE 2-5: PIN DIAGRAMS (CONTINUED)
Legend: Shaded pins indicate pins tolerant to up to +5.5 VDC. Note 1: A pull-up resistor is connected to this pin during power-up and programming.
100-Pin TQFP
9294 93 91 90 89 88 87 86 85 84 83 82 81 80 79 78
20
23456789101112
13141516
65646362616059
26
56
4544434241403928 29 30 31 32 33 34 35 36 37 38
171819
2122
951
7677
72717069686766
757473
5857
2423
25
9698 979927 46 47 48 49 50
5554535251
100
RD
5R
D4
RD
13R
D12
RD
3R
D2
RD
1
RA7
RA6
RE2
RG
13R
G12
RG
14R
E1R
E0
RG
0
RE4
RE3
RF0
V CA
P
SOSCI/RC13
RD0
RD10RD9RD8
RD11
RA15RA14
OSCO/RC15
OSCI/CLKI/RC12VDD
RG2
RF7RF8
RG3
RF2RF3
VSS
SOSCO/RC14
RA1
0R
A9
AVD
D
AVSS
RB8
RB9
RB1
0R
B11
VDD
RF1
2R
F13
V SS
VDD
RD
15R
D14
PGEC
2/R
B6PG
ED2/
RB7
RF5
RF4
RE5RE6RE7RC1RC2RC3RC4RG6
VDDRA0(1)
RE8RE9
PGEC3/RB5PGED3/RB4
RB3RB2
RG7RG8
PGEC1/RB1PGED1/RB0
RG15VDD
RG9MCLR
RB1
2R
B13
RB1
4R
B15
RG
1R
F1
RD
7R
D6
RA5
RA3RA2
VSS
VSS
VSSVB
AT
RA4
RA1
PIC24FJXXXGA410
RF6
2015-2019 Microchip Technology Inc. DS30010073D-page 5
PIC24FJ256GA412/GB412 FAMILY
FIGURE 2-6: PIN DIAGRAMS (CONTINUED)
Legend: Shaded pins indicate pins tolerant to up to +5.5 VDC. Note 1: PIC24FJ256GB410 devices use VUSB3V3 instead of RF6.
2: A pull-up resistor is connected to this pin during power-up and programming.
100-Pin TQFP
9294 93 91 90 89 88 87 86 85 84 83 82 81 80 79 78
20
23456789101112
13141516
65646362616059
26
56
4544434241403928 29 30 31 32 33 34 35 36 37 38
171819
2122
95
1
7677
72717069686766
757473
5857
2423
25
9698 979927 46 47 48 49 50
5554535251
100
RD
5R
D4
RD
13R
D12
RD
3R
D2
RD
1
RA
7R
A6
RE
2R
G13
RG
12R
G14
RE
1R
E0
RG
0
RE
4R
E3
RF0
VCA
P
SOSCI/RC13RD0
RD10RD9RD8
RD11
RA15RA14
OSCO/RC15
OSCI/CLKI/RC12VDD
D+/RG2
VUSB3V3(1)
VBUS/RF7RF8
D-/RG3
RF2RF3
VSS
SOSCO/RC14
RA1
0R
A9
AVD
D
AVSS
RB8
RB9
RB1
0R
B11
VDD
RF1
2R
F13
V SS
VDD
RD
15R
D14
PGEC
2/R
B6PG
ED2/
RB7 RF5
RF4
RE5RE6RE7RC1RC2RC3RC4RG6
VDDRA0(2)
RE8RE9
PGEC3/RB5PGED3/RB4
RB3RB2
RG7RG8
PGEC1/RB1PGED1/RB0
RG15VDD
RG9MCLR
RB1
2R
B13
RB1
4R
B15
RG
1R
F1
RD
7R
D6
RA5
RA3RA2
VSS
VSS
VSSV
BAT
RA4
RA1
PIC24FJXXXGB410
DS30010073D-page 6 2015-2019 Microchip Technology Inc.
PIC24FJ256GA412/GB412 FAMILY
FIGURE 2-7: PIN DIAGRAMS (CONTINUED)
PIC24FJXXXGA412, 121-Pin TFBGA
RE4 RE3 RG13 RE0 RG0 RF1 VBAT RH14 RD12 RD2 RD1
RH1 RG15 RE2 RE1 RA7 RF0 VCAP RD5 RD3 VSS RC14
RE6 VDD RG12 RG14 RA6 VSS RD7 RD4 RH13 RC13 RD11
RC1 RE7 RE5 RH2 RJ0 VDD RD6 RD13 RD0 VSS RD10
RC4 RC3 RG6 RC2 RJ1 RG1 VDD RA15 RD8 RD9 RA14
MCLR RG8 RG9 RG7 VSS RH15 RH12 VDD OSCI/RC12 VSS OSCO/RC15
RE8 RE9 RA0(1) RH3 VDD VSS VSS RH11 RA5 RA3 RA4
PGEC3/RB5 PGED3/RB4 RH4 RH5 RB10 VDD RH8 RF7 RG2 RA2
RB3 RB2 PGED2/RB7 AVDD RH7 RA1 RB12 RH9 RH10 RF8
PGEC1/RB1 PGED1/RB0 RA10 RB8 RB11 RF12 RB14 VDD RD15 RF3 RF2
PGEC2/RB6 RA9 AVSS RB9 RH6 RF13 RB13 RB15 RD14 RF4 RF5
1 2 3 4 5 6 7 8 9 10 11
A
B
C
D
E
F
G
H
J
K
L
Legend: Shaded balls indicate pins tolerant to up to +5.5 VDC. Note 1: A pull-up resistor is connected to this pin during power-up and programming.
RG3
RF6
2015-2019 Microchip Technology Inc. DS30010073D-page 7
PIC24FJ256GA412/GB412 FAMILY
FIGURE 2-8: PIN DIAGRAMS (CONTINUED)
PIC24FJXXXGB412, 121-Pin TFBGA
RE4 RE3 RG13 RE0 RG0 RF1 VBAT RH14 RD12 RD2 RD1
RH1 RG15 RE2 RE1 RA7 RF0 VCAP RD5 RD3 VSS RC14
RE6 VDD RG12 RG14 RA6 VSS RD7 RD4 RH13 RC13 RD11
RC1 RE7 RE5 RH2 RJ0 VDD RD6 RD13 RD0 VSS RD10
RC4 RC3 RG6 RC2 RJ1 RG1 VDD RA15 RD8 RD9 RA14
MCLR RG8 RG9 RG7 VSS RH15 RH12 VDD OSCI/RC12 VSS OSCO/RC15
RE8 RE9 RA0(2) RH3 VDD VSS VSS RH11 RA5 RA3 RA4
PGEC3/RB5 PGED3/RB4 RH4 RH5 RB10 VDD RH8 VBUS/RF7 VUSB3V3(1) D+/RG2 RA2
RB3 RB2 PGED2/RB7 AVDD RH7 RA1 RB12 RH9 RH10 RF8
PGEC1/RB1 PGED1/RB0 RA10 RB8 RB11 RF12 RB14 VDD RD15 RF3 RF2
PGEC2/RB6 RA9 AVSS RB9 RH6 RF13 RB13 RB15 RD14 RF4 RF5
1 2 3 4 5 6 7 8 9 10 11
A
B
C
D
E
F
G
H
J
K
L
Legend: Shaded balls indicate pins tolerant to up to +5.5 VDC. Note 1: PIC24FJ256GB412 devices use VUSB3V3 instead of RF6.
2: A pull-up resistor is connected to this pin during power-up and programming.
D-/RG3
DS30010073D-page 8 2015-2019 Microchip Technology Inc.
PIC24FJ256GA412/GB412 FAMILY
2.4 Program Memory Write/Erase Requirements
The Program Flash Memory (PFM) has a specific write/erase requirement that must be adhered to for properdevice operation. The rule is that any given word inmemory must not be written without first erasing thepage in which it is located. Thus, the easiest way toconform to this rule is to write all the data in aprogramming block within one write cycle. The pro-gramming methods specified in this document complywith this requirement.
2.5 Memory MapThe program memory map extends from 0x00 0000 to0xFF FFFE. Code storage is located at the base of thememory map. The last locations of implementedprogram memory are reserved for the deviceConfiguration bits.
Table 2-2 lists the code memory size, the size of theerase blocks and the number of erase blocks presentin each device variant.
Locations, 0x80 0100 through 0x80 0BFE, arereserved for executive code memory. This regionstores the PE and the debugging executive, which isused for device programming. This region of memorycannot be used to store user code. See Section 6.0“The Programming Executive” for more information.Locations, 0x80 1380 through 0x80 13FE, are reservedfor the customer OTP data. This area can be used forstoring product information, such as serial numbers,system manufacturing dates, manufacturing lot numbersand other application-specific information; it is describedin Section 2.6.3 “One-Time-Programmable (OTP)Memory”.Locations, 0xFF 0000 and 0xFF 0002, are reserved forthe Device ID Word registers. These bits can be usedby the programmer to identify which device type isbeing programmed. They are described in Section 8.0“Device ID”. The Device ID registers read out normally,even after code protection is applied.
Figure 2-9 and Figure 2-10 show the generic memorymaps for the devices described in this specification.See the “Memory Organization” chapter in thespecific device data sheet for exact memoryaddresses.
TABLE 2-2: PROGRAM MEMORY SIZES AND BOUNDARIES
Device
Program Memory Upper Boundary (Instruction Words)Write
Blocks(1)Erase
Blocks(1)Single Partition Flash Mode
Dual Partition Flash Mode
Active Partition Inactive Partition
PIC24FJ256GX4XX 0x02 AFFE (86K) 0x01 57FE (43K) 0x41 57FE (43K) 1376 172PIC24FJ128GX4XX 0x01 57FE (43K) 0x00 ABFE (22K) 0x40 ABFE (22K) 688 86PIC24FJ64GX4XX 0x00 AFFE (22K) 0x00 57FE (11K) 0x40 57FE (11K) 352 44Note 1: 1 Write Block = 64 Instruction Words; 1 Erase Block = 512 Instruction Words.
2015-2019 Microchip Technology Inc. DS30010073D-page 9
PIC24FJ256GA412/GB412 FAMILY
FIGURE 2-9: PROGRAM MEMORY MAP FOR SINGLE PARTITION FLASH MODE
0x00 0000
0xF8 00260xF8 0028
0xFE FFFE
0xFF FFFF
Con
figur
atio
n M
emor
y Sp
ace
Use
r Mem
ory
Spac
e
Legend: Memory areas are not shown to scale.Note 1: Exact boundary addresses are determined by the size of the implemented program memory. See Table 2-2
for details.
Device Config Registers
DEVID (2)
Reserved
0xFF 0000
0xF7 FFFE0xF8 0000
0x80 00000x7F FFFF
Reserved
Flash Config Words0x0X XX00(1)0x0X XXFE(1)
UnimplementedRead ‘0’
User Flash Program Memory
FBOOT 0x80 18020x80 1800
Reserved
0xFF 0004Reserved
Executive Code Memory 0x80 0BFE0x80 0100
Customer OTP Memory 0x80 13FE0x80 1380
Reserved0x80 0C00
0x80 1804
0x80 137E
0x80 14000x80 17FEReserved
0xFA 007E0xFA 0080
Flash Write Latches0xF9 FFFE0xFA 0000
Reserved
DS30010073D-page 10 2015-2019 Microchip Technology Inc.
PIC24FJ256GA412/GB412 FAMILY
FIGURE 2-10: PROGRAM MEMORY MAP FOR DUAL PARTITION FLASH MODES
0x00 0000
0xF8 00260xF8 0028
0xFE FFFE
0xFF FFFF
Con
figur
atio
n M
emor
y Sp
ace
Use
r Mem
ory
Spac
e
Legend: Memory areas are not shown to scale.Note 1: Exact boundary addresses are determined by the size of the implemented program memory. See Table 2-2
for details.
Device Config Registers
DEVID (2) 0xFF 0000
0xF7 FFFE0xF8 0000
0x80 00000x7F FFFF
Reserved
Flash Config Words0x0X XX00(1)0x0X XXFE(1)
UnimplementedRead ‘0’
User Flash Program Memory
FBOOT 0x80 18020x80 1800
Reserved
0xFF 0004Reserved
Executive Code Memory 0x80 0BFE0x80 0100
Customer OTP Memory 0x80 13FE0x80 1380
Reserved0x80 0C00
0x80 1804
0x80 137E
0x40 0000
Flash Config Words
User Flash Program Memory
0x4X XX00(1)0x4X XXFE(1)
UnimplementedRead ‘0’
Active Partition
Inactive Partition
0x80 14000x80 17FEReserved
Reserved
0xFA 007E0xFA 0080
Flash Write Latches0xF9 FFFE0xFA 0000
Reserved
2015-2019 Microchip Technology Inc. DS30010073D-page 11
PIC24FJ256GA412/GB412 FAMILY
2.6 Configuration Bits2.6.1 OVERVIEWThe Configuration bits are stored in the last page loca-tion of implemented program memory. These bits can beset or cleared to select various device configurations.There are two types of Configuration bits: system oper-ation bits and code-protect bits. The system operationbits determine the power-on settings for system-levelcomponents, such as the oscillator and the WatchdogTimer. The code-protect bits prevent program memoryfrom being read and written.Table 2-3 lists the Configuration register address rangefor each device in Single and Dual Partition modes.Table 2-4 lists all of the Configuration bits found in thePIC24FJ256GA412/GB412 family devices, as well astheir Configuration register locations. Refer to the“Special Features” chapter in the specific device datasheet for the full Configuration register description for aspecific device.
2.6.2 CODE-PROTECT CONFIGURATION BITS
The device implements an intermediate security featuredefined by the FSEC register. The Boot Segment (BS) isthe higher privilege segment and the General Segment(GS) is the lower privilege segment. The total user codememory can be split into BS or GS. The size of thesegments is determined by the BSLIM[12:0] bits. Therelative location of the segments within user space doesnot change, such that BS (if present) occupies thememory area just after the Interrupt Vector Table (IVT)and the GS occupies the space just after the BS (or if theAlternate IVT is enabled, just after it). The Configuration Segment (or CS) is a small segment(less than a page, typically just one row) within userFlash address space. It contains all user configurationdata that is loaded by the NVM Controller during theReset sequence.
TABLE 2-3: CONFIGURATION WORD ADDRESSES
Configuration Register
Single Partition Flash Mode
PIC24FJ256GX4XX PIC24FJ128GX4XX PIC24FJ64GX4XX
FSEC 0x02 AF80 0x01 5780 0x00 AF80FBSLIM 0x02 AF90 0x01 5790 0x00 AF90FSIGN 0x02 AF94 0x01 5794 0x00 AF94FOSCSEL 0x02 AF98 0x01 5798 0x00 AF98FOSC 0x02 AF9C 0x01 579C 0x00 AF9CFWDT 0x02 AFA0 0x01 57A0 0x00 AFA0FPOR 0x02 AFA4 0x01 57A4 0x00 AFA4FICD 0x02 AFA8 0x01 57A8 0x00 AFA8FDS 0x02 AFAC 0x01 57AC 0x00 AFACFDEVOPT1 0x02 AFB0 0x01 57B0 0x00 AFB0FBOOT 0x80 1800
Dual Partition Flash Modes(1)
FSEC(2) 0x01 5780/0x41 5780 0x00 AB80/0x40 AB80 0x00 5780/0x40 5780FBSLIM(2) 0x01 5790/0x41 5790 0x00 AB90/0x40 AB90 0x00 5790/0x40 5790FSIGN(2) 0x01 5794/0x41 5794 0x00 AB94/0x40 AB94 0x00 5794/0x40 5794FOSCSEL 0x01 5798/0x41 5798 0x00 AB98/0x40 AB98 0x00 5798/0x40 5598FOSC 0x01 579C/0x41 579C 0x00 AB9C/0x40 AB9C 0x00 559C/0x40 579CFWDT 0x01 57A0/0x41 57A0 0x00 ABA0/0x40 ABA0 0x00 57A0/0x40 57A0FPOR 0x01 57A4/0x41 57A4 0x00 ABA4/0x40 ABA4 0x00 57A4/0x40 57A4FICD 0x01 57A8/0x41 57A8 0x00 ABA8/0x40 ABA8 0x00 57A8/0x40 57A8FDS 0x01 57AC/0x41 57AC 0x00 ABAC/0x40 ABAC 0x00 57AC/0x40 57ACFDEVOPT1 0x01 57B0/0x41 57B0 0x00 ABB0/0x40 ABB0 0x00 57B0/0x40 57B0FBTSEQ 0x01 57FC/0x41 57FC 0x00 ABFC/0x40 ABFC 0x00 57FC/0x40 57FCFBOOT 0x80 1800Note 1: Addresses shown for Dual Partition Flash modes are for the Active/Inactive Partitions, respectively.
2: Changes to these Inactive Partition Configuration Words affect how the Active Partition accesses the Inactive Partition.
DS30010073D-page 12 2015-2019 Microchip Technology Inc.
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icrochip Technology Inc.D
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PIC24FJ256G
A412/G
B412 FA
MILY
TAR Bit 3 Bit 2 Bit 1 Bit 0
FS BSS[2:0] BWRP
FB
FS — — — —
FO FNOSC[2:0]
FO SOSCSEL OSCIOFNC POSCMD[1:0]
FW WDTPS[3:0]
FP — RETVRDIS BOREN[1:0]
FIC — — ICS[1:0]
FD DSWDTPS[4:0]
FD DOPT[3:1] —
FB
FB — — BTMODE[1:0]
LeNo
BLE 2-4: CONFIGURATION REGISTERS MAPegister Name
Bits 23-16 Bit 15 Bit 14 Bit 13 Bit 12 Bit 11 Bit 10 Bit 9 Bit 8 Bit 7 Bit 6 Bit 5 Bit 4
EC — AIVTDIS — — — CSS[2:0] CWRP GSS[1:0] GWRP —
SLIM — — — — BSLIM[12:0]
IGN — SIGN — — — — — — — — — — —
SCSEL — — — — — — — — — IESO PLLMODE[3:0]
SC — — — — — — — — — FCKSM[1:0] IOL1WAY PLLSS
DT — — WDTCLK[1:0] — WDTCMX — WDTWIN[1:0] WINDIS FWDTEN[1:0] WDTPRE
OR — — — — — — — — — r(1) — — —
D — NOBTSWP — — — — — — — BKBUG — JTAGEN —
S — DSBITEN — — — — — — — DSWDTEN DSZPBOR DSWDTLPRC
EVOPT1 — — — — — — — — — — — — —
TSEQ IBSEQ[11:0] BSEQ[11:0]
OOT — — — — — — — — — — — — —
gend: — = unimplemented bit, read as ‘1’.te 1: Bit is reserved, maintain as ‘0’.
PIC24FJ256GA412/GB412 FAMILY
2.6.3 ONE-TIME-PROGRAMMABLE (OTP) MEMORY
PIC24FJ256GA412/GB412 family devices provide384 bytes of One-Time Programmable (OTP)memory, located at addresses, 0x80 1700 through0x80 17FE. This memory can be used for persistentstorage of application-specific information that will notbe erased by reprogramming the device. Thisincludes many types of information, such as (but notlimited to):
• Application checksums• Code revision information• Product information• Serial numbers• System manufacturing dates• Manufacturing lot numbers
Customer OTP memory may be programmed in anymode, including user RTSP mode, but it cannot beerased. Data is not cleared by a Chip Erase.
Do not perform repeated writes on the OTP memory.
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3.0 DEVICE PROGRAMMING – ICSPICSP mode is a special programming protocol thatallows you to read and write to device memory. TheICSP mode is the most direct method used to programthe device, which is accomplished by applying controlcodes and instructions serially to the device, using thePGECx and PGEDx pins. ICSP mode also has theability to read executive memory to determine if theProgramming Executive (PE) is present and to writethe PE to executive memory if Enhanced ICSP modewill be used.
In ICSP mode, the system clock is taken from thePGECx pin, regardless of the device’s OscillatorConfiguration bits. All instructions are shifted seriallyinto an internal buffer, then loaded into the InstructionRegister (IR) and executed. No program fetchingoccurs from internal memory. Instructions are fed in24 bits at a time. PGEDx is used to shift data in, andPGECx is used as both the serial shift clock and theCPU execution clock.
3.1 Overview of the Programming Process
Figure 3-1 illustrates the high-level overview of theprogramming process. After entering ICSP mode, thefirst action is to Chip Erase program memory. Next, thecode memory is programmed, followed by the deviceConfiguration bits. Code memory (including the Config-uration bits) is then verified to ensure that programmingwas successful. Then, the code-protect Configurationbits are programmed, if required.
FIGURE 3-1: HIGH-LEVEL ICSP™ PROGRAMMING FLOW
Note 1: During ICSP operation, the operatingfrequency of PGECx must not exceed5 MHz.
2: ICSP mode is slower than EnhancedICSP mode for programming.
Start
Perform ChipErase
Program Memory,
Verify Program Memory,
End
Enter ICSP™
Program Code-Protect
Exit ICSP
Configuration Wordsand User ID Words
Configuration Wordsand User ID Words
Configuration Bits
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3.2 Entering ICSP ModeAs illustrated in Figure 3-2, entering ICSP Program/Verify mode requires three steps:
1. MCLR is briefly driven high and then low(P21).(1)
2. A 32-bit key sequence is clocked into PGEDx.3. MCLR is then driven high within a specified
period of time, ‘P19’, and held.
The programming voltage applied to MCLR isVIH, which is essentially VDD in the case ofPIC24FJ256GA412/GB412 family devices. There is nominimum time requirement for holding at VIH. After VIHis removed, an interval of at least P18 must elapsebefore presenting the key sequence on PGEDx.
The key sequence is a specific 32-bit pattern,‘0100 1101 0100 0011 0100 1000 0101 0001’(more easily remembered as 0x4D43 4851 in hexa-decimal). The device will enter Program/Verify mode onlyif the sequence is valid. The Most Significant bit (MSb) ofthe most significant nibble must be shifted in first.
Once the key sequence is complete, VIH must beapplied to MCLR and held at that level for as long asProgram/Verify mode is to be maintained. An intervaltime of at least P19, P7 and P1 * 5 must elapse beforepresenting data on PGEDx. Signals appearing onPGEDx before P7 has elapsed will not be interpretedas valid.
On successful entry, the program memory can beaccessed and programmed in serial fashion. While inICSP mode, all unused I/Os are placed in ahigh-impedance state.
FIGURE 3-2: ENTERING ICSP™ MODE
Note 1: If a capacitor is present on the MCLR pin,the high time for entering ICSP mode canvary.
MCLR
PGEDx
PGECx
VDD
P6P14
b31 b30 b29 b28 b27 b2 b1 b0b3...
Program/Verify Entry Code = 0x4D43 4851
P1AP1B
P18
P19
0 1 0 0 1 0 0 0 1
P7VIH VIH
P21 P1 * 5
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3.3 ICSP OperationAfter entering into ICSP mode, the CPU is Idle.Execution of the CPU is governed by an internal statemachine. A 4-bit control code is clocked in usingPGECx and PGEDx, and this control code is used tocommand the CPU (see Table 3-1).
The SIX control code is used to send instructions to theCPU for execution and the REGOUT control code is usedto read data out of the device through the VISI register.
TABLE 3-1: CPU CONTROL CODES IN ICSP™ MODE
3.3.1 SIX SERIAL INSTRUCTION EXECUTION
The SIX control code allows execution of assemblyinstructions. When the SIX code is received, the CPU issuspended for 24 clock cycles as the instruction is thenclocked into the internal buffer. Once the instruction isshifted in, the state machine allows it to be executed overthe next four clock cycles. While the received instructionis executed, the state machine simultaneously shifts inthe next 4-bit command (see Figure 3-3).
FIGURE 3-3: SIX SERIAL EXECUTION
FIGURE 3-4: PROGRAM ENTRY AFTER RESET
4-Bit Control Code Mnemonic Description
0000 SIX Shift in 24-bit instruction and execute.
0001 REGOUT Shift out the VISIregister.
0010-1111 N/A Reserved.
Note 1: Coming out of the ICSP entry sequence,the first 4-bit control code is alwaysforced to SIX and a forced NOPinstruction is executed by the CPU. Fiveadditional PGECx clocks are needed onstart-up, thereby resulting in a 9-bit SIXcommand instead of the normal 4-bit SIXcommand. After the forced SIX isclocked in, ICSP operation resumes asnormal (the next 24 clock cycles load thefirst instruction word to the CPU). SeeFigure 3-4 for details.
2: TBLRDH, TBLRDL, TBLWTH and TBLWTLinstructions must be followed by a NOPinstruction.
P4
1 2 3 23 24 1 2 3 4P1
PGECxP4a
PGEDx
24-Bit Instruction Fetch Execute 24-Bit Instruction,Execute PC – 1,Fetch SIX Control Code Fetch Next Control Code
4 5 6 7 8 18 19 20 21 2217
LSB X X X X X X X X X X X X X X MSB
PGEDx = Input
P2
P3P1B
P1A
1 2
0 0 0 00 0
3 4
0 0
P4
2 3 1 2 3 23 24 1 2 3 4P1
PGECxP4a
PGEDx
24-Bit Instruction Fetch Execute 24-bit Instruction,Execute PC – 1,
1 4
0 0 0 0
Fetch SIX Control Code Fetch Next Control Code
4 5 6 7 8 18 19 20 21 2217
LSB X X X X X X X X X X X X X X MSB
PGEDx = Input
P2
P3P1B
P1A
5 6 7
0 0 0 00 0 0
8 9
0 0
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3.3.2 REGOUT SERIAL INSTRUCTION EXECUTION
The REGOUT control code allows for data to beextracted from the device in ICSP mode. It is used toclock the contents of the VISI register out of the deviceover the PGEDx pin. After the REGOUT control code isreceived, the CPU is held Idle for eight cycles. Afterthese eight cycles, an additional 16 cycles are requiredto clock the data out (see Figure 3-5).
The REGOUT code is unique because the PGEDx pin isan input when the control code is transmitted to thedevice. However, after the control code is processed,the PGEDx pin becomes an output as the VISI registeris shifted out.
FIGURE 3-5: REGOUT SERIAL EXECUTION
Note: The device will latch input PGEDx data onthe rising edge of PGECx and will outputdata on the PGEDx line on the rising edgeof PGECx. For all data transmissions, theLeast Significant bit (LSb) is transmittedfirst.
1 2 3 4 1 2 7 8PGECx
P4
PGEDx
PGEDx = Input
Execute Previous Instruction, CPU Held in Idle Shift Out VISI Register[15:0]
P5
PGEDx = Output
1 2 3 1 2 3 4
P4a
11 13 15 161412
No Execution Takes Place,Fetch Next Control Code
0 0 0 0 0
PGEDx = Input
MSb1 2 3 41
4 5 6
LSb 141312... 11100
Fetch REGOUT Control Code
0
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3.4 Flash Memory Programming in ICSP Mode
3.4.1 PROGRAMMING OPERATIONSFlash memory write/erase operations are controlled bythe NVMCON register. Programming is performed bysetting NVMCON to select the type of erase operation(Table 3-2) or write operation (Table 3-3) and initiatingthe programming by setting the WR control bit(NVMCON[15]).
In ICSP mode, all programming operations areself-timed. There is an internal delay between the usersetting the WR control bit and the automatic clearingof the WR control bit when the programmingoperation is complete. Refer to Section 10.0 “AC/DCCharacteristics and Timing Requirements” fordetailed information about the delays associated withvarious programming operations.
TABLE 3-2: NVMCON ERASE OPERATIONS
TABLE 3-3: NVMCON WRITE OPERATIONS
3.4.2 STARTING AND STOPPING A PROGRAMMING CYCLE
For protection against accidental operations, the erase/write initiate sequence must be written to the NVMKEYregister to allow any erase or program operation toproceed. The two instructions following the start of theprogramming sequence should be NOPs. To start anerase or write sequence, the following steps must becompleted:
1. Write 0x55 to the NVMKEY register.2. Write 0xAA to the NVMKEY register.3. Set the WR bit in the NVMCON register.4. Execute three NOP instructions.All erase and write cycles are self-timed. The WR bitshould be polled to determine if the erase or write cyclehas been completed.
NVMCONValue Erase Operation
0x400E Chip Erase user memory (does not erase Device ID, customer OTP or Program Executive memory).
0x4003 Erase a page of program or executive memory.
0x4004 Erase user memory and Configuration Words in the Inactive Partition (Dual Partition modes only).
NVMCONValue Write Operation
0x4001 Double-word program operation.0x4002 Row programming operation.
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3.5 Erasing Program MemoryThe general procedure for erasing user memory isshown in Figure 3-6. The process for Chip Erase, PageErase and Inactive Partition Erase are all substantiallysimilar, and are described in Table 3-4 throughTable 3-6.
The last row of the last page of program memorycontains the Flash Configuration Words. Before pro-gramming these Words, they must be erased. If theyare erased with a Page Erase operation, all other rowsin the page will also be erased. Users may want to eitheravoid using the rest of this page for application code, orensure that the non-configuration data in the CS page iscopied before the erase and reprogrammed afterwards.
The Configuration Read registers can only be loadedas part of the Reset sequence and cannot be modifiedat any other time.
FIGURE 3-6: ERASE FLOW
TABLE 3-4: SERIAL EXECUTION FOR CHIP ERASE
Note 1: Program memory must be erased beforewriting any data to program memory.
2: For Page Erase operations, theNVMADRL/H registers must also beloaded with the address of the page to beerased.
Start
End
Set the WR Bit to Initiate Erase
Write Appropriate Value to NVMCON[3:0]
Delay P11 + P10 Time
Set the WREN bit
Command (Binary)
Data (Hex) Description
Step 1: Exit the Reset vector.000000000000
000000040200000000
NOPGOTO 0x200NOP
Step 2: Configure the NVMCON register to perform a Chip Erase.00000000
2400E0883B00
MOV #0x400E, W0MOV W0, NVMCON
Step 3: Set the WR bit.00000000000000000000000000000000
200550883B30200AA0883B30A8E761000000000000000000
MOV #0x55, W0MOV W0, NVMKEYMOV #0xAA, W0MOV W0, NVMKEYBSET NVMCON, #WRNOPNOPNOP
Step 4: Repeat this step to poll the WR bit until it is cleared by hardware.00000000000000000000000100000000
04020000000803B02883C22000000
000000060000
GOTO 0x200NOPMOV NVMCON, W2MOV W2, VISINOPClock out the contents of the VISI register.NOPRETURN
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TABLE 3-5: SERIAL EXECUTION FOR PAGE ERASECommand (Binary)
Data (Hex) Description
Step 1: Exit the Reset vector.000000000000
000000 040200 000000
NOPGOTO 0x200NOP
Step 2: Set the NVMCON register to erase a page.00000000
240030 883B00
MOV #0x4003, W0MOV W0, NVMCON
Step 3: Load the address of the page to be erased into the NVMADR register pair.0000000000000000
200000 883B10 200000 883B20
MOV #PageAddress, W0MOV W0, NVMADRMOV #PageAddress, W0MOV W0, NVMADRU
Step 4: Set the WR bit.00000000000000000000000000000000
200550 883B30 200AA0 883B30 A8E761 000000 000000 000000
MOV #0x55, W0MOV W0, NVMKEYMOV #0xAA, W0MOV W0, NVMKEYBSET NVMCON, #WRNOPNOPNOP
Step 5: Repeat this step to poll the WR bit until it is cleared by hardware.0000000000000000000000010000
040200 000000 803B02 883C22 000000
000000
GOTO 0x200NOPMOV NVMCON, W2MOV W2, VISINOPClock out the contents of the VISI register.NOP
Step 6: Clear the WREN bit.00000000
200000 883B00
MOV NVMCON, W2MOV W0, NVMCON
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TABLE 3-6: SERIAL EXECUTION FOR INACTIVE PARTITION ERASECommand (Binary)
Data (Hex) Description
Step 1: Exit the Reset vector.000000000000
000000 040200 000000
NOPGOTO 0x200NOP
Step 2: Set the NVMCON register to erase a page.00000000
240040 883B00
MOV #0x4004, W0MOV W0, NVMCON
Step 3: Set the WR bit.00000000000000000000000000000000
200550 883B30 200AA0 883B30 A8E761 000000 000000 000000
MOV #0x55, W0MOV W0, NVMKEYMOV #0xAA, W0MOV W0, NVMKEYBSET NVMCON, #WRNOPNOPNOP
Step 4: Repeat this step to poll the WR bit until it is cleared by hardware.0000000000000000000000010000
040200 000000 803B02 883C22 000000
000000
GOTO 0x200NOPMOV NVMCON, W2MOV W2, VISINOPClock out the contents of the VISI register.NOP
Step 5: Clear the WREN bit.00000000
200000 883B00
MOV NVMCON, W2MOV W0, NVMCON
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3.6 Writing Code MemoryFor PIC24FJ256GA412/GB412 devices, there are twomethods available for writing to code memory:two-word writes using the write latches or 64-word rowwrites. Figure 3-7 provides a high-level description ofthe two methods.
Two-word writes program code memory with twoinstruction words at a time. Two words are loaded intothe write latches and the Write Pointer is incremented.Next, the write sequence is initiated, and finally, the WRbit is checked for the sequence to be complete. Thisprocess continues for all the data to be programmed.
Table 3-7 provides an example of ICSP programmingfor a two-word write operation.
FIGURE 3-7: PROGRAM CODE MEMORY FLOW
Start
Configure Devicefor Writes
All Data Written?
No
Yes
Initiate WriteSequence and Poll
WR Bit to be Cleared
Initialize Write Pointerwith Row Address
(DestinationAddress)
Load Two Words intoWrite Latches
IncrementWrite Pointer
End
No
Using RAM RowProgramming
Using Two-WordProgramming
Load 64 Wordsinto Write Latches
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TABLE 3-7: SERIAL INSTRUCTION EXECUTION FOR PROGRAMMING CODE MEMORY:TWO-WORD LATCH WRITES
Command(Binary)
Data(Hex) Description
Step 1: Exit the Reset vector.000000000000
000000040200000000
NOPGOTO 0x200NOP
Step 2: Initialize the TBLPAG register for writing to the latches.00000000
200FAC8802AC
MOV #0xFA, W12MOV W12, TBLPAG
Step 3: Load W0:W2 with the next two packed instruction words to program.000000000000
2xxxx02xxxx12xxxx2
MOV #, W0MOV #, W1MOV #, W2
Step 4: Set the Read Pointer (W6) and Write Pointer (W7), and load the (next set of) write latches.0000000000000000000000000000000000000000000000000000000000000000
EB0300000000EB0380000000BB0BB6000000000000BBDBB6000000000000BBEBB6000000000000BB1BB6000000000000
CLR W6NOPCLR W7NOPTBLWTL [W6++], [W7] NOPNOPTBLWTH.B [W6++], [W7++]NOPNOPTBLWTH.B [W6++], [++W7]NOPNOPTBLWTL.W [W6++], [W7++]NOP NOP
Step 5: Set the NVMADRU/NVMADR register pair to point to the correct address.0000000000000000
2xxxx32xxxx4883B13883B24
MOV #DestinationAddress, W3MOV #DestinationAddress, W4MOV W3, NVMADRMOV W4, NVMADRU
Step 6: Set the NVMCON register to program two instruction words.000000000000
24001A883B0A000000
MOV #0x4001, W10MOV W10, NVMCONNOP
Step 7: Initiate the write cycle.00000000000000000000000000000000
200551883B31200AA1883B31A8E761000000000000000000
MOV #0x55, W1MOV W1, NVMKEYMOV #0xAA, W1MOV W1, NVMKEYBSET NVMCON, #WRNOPNOPNOP
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Step 8: Wait for program operation to complete and make sure the WR bit is clear.0000000000000001000000000000
—
803B00883C20000000
000000040200000000
—
MOV NVMCON, W0MOV W0, VISINOPClock out the contents of the VISI register.NOPGOTO 0x200NOPRepeat until the WR bit is clear.
Step 9: Repeat Steps 3-8 until all code memory is programmed.Step 10: Clear the WREN bit.
00000000
803B02 883B00
MOV NVMCON, W2MOV W0, NVMCON
TABLE 3-7: SERIAL INSTRUCTION EXECUTION FOR PROGRAMMING CODE MEMORY:TWO-WORD LATCH WRITES (CONTINUED)
Command(Binary)
Data(Hex) Description
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Row writes program one row (64 instruction words) ata time. First, the Table Pointer is initialized to point tothe program latches and data is written into them withTable Writes. Next, the Write Pointer is initialized(NVMADRU and NVMADR register pair) with therow address (DestinationAddress). Finally, the writesequence is initiated and the WR bit is checked for therow programming to be complete. This process isrepeated for all data to be programmed. Table 3-8shows the ICSP programming details for row writes.
To minimize programming time, the data to be pro-grammed is stored in the W0:W5 registers in a packeddata format (Figure 3-8). This is the same packedformat used by the PE. See Section 6.2.2 “PackedData Format” for additional information.
FIGURE 3-8: PACKED INSTRUCTION WORD STORAGE IN W0:W5
MSB0MSB1
LSW1
LSW0
0715
MSB2MSB3
LSW3
LSW2
W0
W1
W2
W3
W4
W5
TABLE 3-8: SERIAL INSTRUCTION EXECUTION FOR PROGRAMMING CODE MEMORY: ROW WRITES
Command(Binary)
Data(Hex) Description
Step 1: Exit the Reset vector.000000000000
000000040200000000
NOPGOTO 0x200NOP
Step 2: Set the NVMCON register to program 64 instruction words.00000000
240020883B00
MOV #0x4002, W0MOV W0, NVMCON
Step 3: Initialize the TBLPAG register for writing to the latches.00000000
200FAC8802AC
MOV #0xFA, W12MOV W12, TBLPAG
Step 4: Load W0:W5 with the next 4 instruction words to program.000000000000000000000000
2xxxx02xxxx12xxxx22xxxx32xxxx42xxxx5
MOV #, W0MOV #, W1MOV #, W2MOV #, W3MOV #, W4MOV #, W5
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Step 5: Set the Read Pointer (W6) and load the (next set of) write latches.0000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000
EB0300000000EB0380000000BB0BB6000000000000BBDBB6000000000000BBEBB6000000000000BB1BB6000000000000BB0BB6000000000000BBDBB6000000000000BBEBB6000000000000BB1BB6000000000000
CLR W6NOPCLR W7NOPTBLWTL [W6++], [W7]NOPNOPTBLWTH.B [W6++], [W7++]NOPNOPTBLWTH.B [W6++], [++W7]NOPNOPTBLWTL [W6++], [W7++]NOPNOPTBLWTL [W6++], [W7]NOPNOPTBLWTH.B [W6++], [W7++]NOPNOPTBLWTH.B [W6++], [++W7]NOPNOPTBLWTL [W6++], [W7++]NOPNOP
Step 6: Repeat Steps 4 and 5, for a total of 16 times, to load the write latches with 64 instructions.Step 7: Set the NVMADRU/NVMADR register pair to point to the correct address.
0000000000000000
2xxxx32xxxx4883B13883B24
MOV #DestinationAddress, W3MOV #DestinationAddress, W4MOV W3, NVMADRMOV W4, NVMADRU
Step 8: Execute the WR bit unlock sequence and initiate the write cycle.00000000000000000000000000000000
200550883B30200AA0883B30A8E761000000000000000000
MOV #0x55, W0MOV W0, NVMKEYMOV #0xAA, W0MOV W0, NVMKEYBSET NVMCON, #WRNOPNOPNOP
Step 9: Repeat this step to poll the WR bit until it is cleared by hardware.0000000000000000000000010000
040200 000000 803B02 883C22 000000
000000
GOTO 0x200NOPMOV NVMCON, W2MOV W2, VISINOPClock out the contents of the VISI register.NOP
TABLE 3-8: SERIAL INSTRUCTION EXECUTION FOR PROGRAMMING CODE MEMORY: ROW WRITES (CONTINUED)
Command(Binary)
Data(Hex) Description
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Step 10: Reset the device’s internal Program Counter.00000000
040200000000
GOTO 0x200NOP
Step 11: Repeat Steps 3 through 9 until all code memory is programmed.Step 12: Clear the WREN bit.
00000000
803B02 883B00
MOV NVMCON, W2MOV W0, NVMCON
TABLE 3-8: SERIAL INSTRUCTION EXECUTION FOR PROGRAMMING CODE MEMORY: ROW WRITES (CONTINUED)
Command(Binary)
Data(Hex) Description
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3.7 Writing Configuration BitsThe procedure for writing Configuration bits is similar tothe procedure for writing code memory. Table 3-9shows the ICSP programming details for writing theConfiguration bits.
For all Configuration Words, except FBTSEQ, only thelower two bytes of the Word contain configuration data;the upper byte is unused. It is recommended that theupper byte be programmed with 0xFFFF, as indicatedin Step 3 (see Table 3-9). FBTSEQ (implemented onlyin Dual Partition modes) uses all 24 bits of the programmemory’s width to store the Boot Sequence Numberbits, BSEQ[11:0] (FBTSEQ[11:0]), and their one’scomplement, IBSEQ[11:0] (FBTSEQ[23:12]).
To change the values of the Configuration bits oncethey have been programmed, the device must beerased, as described in Section 3.5 “ErasingProgram Memory”, and reprogrammed to the desiredvalue. Note that it is only possible to program aConfiguration bit from ‘1’ to ‘0’ to enable codeprotection; it is not possible to program it from ‘0’ to ‘1’.The Flash page on which the Configuration Segmentresides is shared with the General Segment. To erase andrewrite the Configuration bits, the entire page must beerased. To avoid losing data held in the General Segment:
1. Copy the page to RAM.2. Update the RAM copy with the new
Configuration bit values.3. Write back the data to the Flash page.
Alternatively, avoid use of the portion of this Flash pageused by the General Segment.
TABLE 3-9: SERIAL INSTRUCTION EXECUTION FOR PROGRAMMING CONFIGURATION WORDS:TWO-WORD LATCH WRITES
Command(Binary)
Data(Hex) Description
Step 1: Exit the Reset vector.000000000000
000000040200000000
NOPGOTO 0x200NOP
Step 2: Initialize the TBLPAG register for writing to the latches.00000000
200FAC8802AC
MOV #0xFA, W12MOV W12, TBLPAG
Step 3: Load W0:W1 with the next two Configuration Words to program.0000
—00000000
2xxxx0—
2xxxx12FFFF2
MOV #, W0Upper word is 0xFFFF for all Configuration Words except FBTSEQ.MOV #, W1MOV #, W2
Step 4: Set the Read Pointer (W6) and Write Pointer (W7), and load the (next set of) write latches.0000000000000000000000000000000000000000000000000000000000000000
EB0300000000EB0380000000BB0BB6000000000000BBDBB6000000000000BBEBB6000000000000BB1BB6000000000000
CLR W6NOPCLR W7NOPTBLWTL [W6++], [W7]NOPNOPTBLWTH.B [W6++], [W7++]NOPNOPTBLWTH.B [W6++], [++W7]NOPNOPTBLWTL.W [W6++], [W7++]NOPNOP
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Step 5: Set the NVMADRU/NVMADR register pair to point to the correct address.0000000000000000
2xxxx32xxxx4883B13883B24
MOV #DestinationAddress, W3MOV #DestinationAddress, W4MOV W3, NVMADRMOV W4, NVMADRU
Step 6: Set the NVMCON register to program two instruction words.000000000000
24001A883B0A000000
MOV #0x4001, W10MOV W10, NVMCONNOP
Step 7: Initiate the write cycle.00000000000000000000000000000000
200551883B31200AA1883B31A8E761000000000000000000
MOV #0x55, W1MOV W1, NVMKEYMOV #0xAA, W1MOV W1, NVMKEYBSET NVMCON, #WRNOPNOPNOP
Step 8: Wait for program operation to complete and make sure the WR bit is clear.0000000000000001000000000000
—
803B00883C20000000
000000040200000000
—
MOV NVMCON, W0MOV W0, VISINOPClock out the contents of the VISI register.NOPGOTO 0x200NOPRepeat until the WR bit is clear.
Step 9: Repeat Steps 3-8 until all code memory is programmed.Step 10: Clear the WREN bit.
00000000
803B02 883B00
MOV NVMCON, W2MOV W0, NVMCON
TABLE 3-9: SERIAL INSTRUCTION EXECUTION FOR PROGRAMMING CONFIGURATION WORDS:TWO-WORD LATCH WRITES (CONTINUED)
Command(Binary)
Data(Hex) Description
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3.8 Reading Code MemoryReading from code memory is performed by executinga series of TBLRD instructions and clocking out the datausing the REGOUT command.Table 3-10 shows the ICSP programming details forreading code memory.
To minimize reading time, the same packed dataformat that the PE uses is utilized. See Section 6.2“Programming Executive Commands” for moredetails on the packed data format.
3.9 Reading Configuration WordsThe procedure for reading Configuration Words isidentical to the procedure for reading code memory,shown in Table 3-10. Since there are multipleConfiguration Words, they are read one at a time.
TABLE 3-10: SERIAL INSTRUCTION EXECUTION FOR READING CODE MEMORYCommand
(Binary)Data(Hex) Description
Step 1: Exit the Reset vector.000000000000
000000040200000000
NOPGOTO 0x200NOP
Step 2: Initialize the Write Pointer (W7) to point to the VISI register.00000000
207847000000
MOV #VISI, W7NOP
Step 3: Initialize the TBLPAG register and the Read Pointer (W6) for the TBLRD instruction.000000000000
200xx08802A02xxxx6
MOV #, W0MOV W0, TBLPAGMOV #, W6
Step 4: Read and clock out the contents of the next two locations of code memory, through the VISI register, using the REGOUT command.
000000000000000100000000000000000000000000000001000000000000000000010000
BA0B96000000000000
000000BADBB6000000000000BAD3D6000000000000
000000BA0BB6000000000000
000000
TBLRDL [W6], [W7]NOPNOPClock out the contents of the VISI register.NOPTBLRDH.B [W6++], [W7++]NOPNOPTBLRDH.B [++W6], [W7--]NOPNOPClock out the contents of the VISI register.NOPTBLRDL [W6++], [W7]NOPNOPClock out the contents of the VISI register.NOP
Step 5: Reset the device’s internal Program Counter.00000000
040200000000
GOTO 0x200NOP
Step 6: Repeat Steps 3 through 5 until all desired code memory is read (note that “Reset the device’s internal Program Counter” will be Step 5).
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3.10 Verify Code Memory and Configuration Bits
The verify step involves reading back the code memoryspace and comparing it against the copy held in theprogrammer’s buffer. The Configuration Words areverified with the rest of the code.
The verify process is illustrated in Figure 3-9. The lowerword of the instruction is read, and then the lower byteof the upper word is read and compared against theinstruction stored in the programmer’s buffer. Referto Section 3.8 “Reading Code Memory” forimplementation details of reading code memory.
FIGURE 3-9: VERIFY CODE MEMORY FLOW
3.11 Exiting ICSP ModeExiting Program/Verify mode is done by removing VIHfrom MCLR, as illustrated in Figure 3-10. The onlyrequirement for exit is that an interval, P16, shouldelapse between the last clock, and program signals onPGECx and PGEDx, before removing VIH.
FIGURE 3-10: EXITING ICSP™ MODE
Note: Because the Configuration bytes includethe device code protection bit, code memoryshould be verified immediately after writ-ing if the code protection is to be enabled.This is because the device will not bereadable or verifiable if a device Resetoccurs after the code-protect bit has beencleared.
Read Low Word
Read High Byte
Data?
AllCode Memory
Verified?
No
Yes
No
Set TBLPTR = 0
Start
Yes
End
with Post-Increment
with Post-Increment
FailureReport Error
DoesInstruction Word
= Expected
MCLR
P16
PGEDx
PGEDx = Input
PGECx
VDD
VIH
VIH
P17
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4.0 DEVICE PROGRAMMING – ENHANCED ICSP
This section discusses programming the devicethrough Enhanced ICSP and the ProgrammingExecutive (PE). The PE resides in executive memory(separate from code memory) and is executed whenEnhanced ICSP Programming mode is entered. ThePE provides the mechanism for the programmer (hostdevice) to program and verify the PIC24FJ256GA412/GB412 family devices, using a simple command setand communication protocol. There are several basicfunctions provided by the PE:
• Read Memory• Erase Memory• Program Memory• Blank Check
The PE performs the low-level tasks required forerasing, programming and verifying a device. Thisallows the programmer to program the device byissuing the appropriate commands and data. A detaileddescription for each command is provided inSection 6.2 “Programming Executive Commands”.
4.1 Overview of the Programming Process
Figure 4-1 shows the high-level overview of theprogramming process. First, it must be determined ifthe PE is present in executive memory, and then,Enhanced ICSP mode is entered. The programmemory is then erased, and the program memory andConfiguration Words are programmed and verified.Last, the code-protect Configuration bits areprogrammed (if required) and Enhanced ICSP mode isexited.
FIGURE 4-1: HIGH-LEVEL ENHANCED ICSP™ PROGRAMMING FLOW
Note: The PE uses the device’s data RAM forvariable storage and program execution.After running the PE, no assumptionsshould be made about the contents ofdata RAM.
Start
End
Program Memory,
Verify Program Memory,
Erase
Program Code-Protect
Exit Enhanced ICSP
Confirm Presence of
Enter Enhanced
Configuration Words
Configuration Bits
Programming Executive
ICSP™ mode
Program Memory
Configuration Wordsand User ID Words
and User ID Words
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4.2 Confirming the Presence of the Programming Executive
Before programming, the programmer must confirmthat the PE is stored in executive memory. Theprocedure for this task is illustrated in Figure 4-2.
First, ICSP mode is entered. Then, the unique Applica-tion ID Word, stored in executive memory, is read. If theApplication ID has the value, 0xE0, the ProgrammingExecutive is resident in memory and the device can beprogrammed. However, if the Application ID Word isnot present, the PE must be programmed to executivecode memory using the method described inSection 5.0 “Programming the ProgrammingExecutive to Memory”. Section 3.0 “Device Programming – ICSP”describes the ICSP programming method. Section 4.3“Reading the Application ID Word” describes theprocedure for reading the Application ID Word in ICSPmode.
FIGURE 4-2: CONFIRMING PRESENCE OF PROGRAMMING EXECUTIVE
Is
Start
Enter ICSP™ mode
Content = 0xE0?
Yes
No
Application IDCheck the
be ProgrammedProg. Executive must
by Reading Address0x80 0BFE
End
Exit ICSP mode
Enter Enhanced
Sanity Check
ICSP mode
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4.3 Reading the Application ID WordThe Application ID Word is stored at address,0x80 0FF0, in executive code memory. To read thismemory location, you must use the SIX control code tomove this program memory location to the VISIregister. Then, the REGOUT control code must be usedto clock the contents of the VISI register out of thedevice. The corresponding control and instructioncodes that must be serially transmitted to the device toperform this operation are shown in Table 4-1.
If the Application ID has the value, 0x0E, theProgramming Executive is resident in memory and thedevice can be programmed using the mechanismdescribed in this section. However, if the ApplicationID has any other value, the PE is not resident inmemory; it must be loaded to memory before thedevice can be programmed. The procedure for loadingthe PE to memory is described in Section 5.0“Programming the Programming Executive toMemory”.
TABLE 4-1: SERIAL INSTRUCTION EXECUTION FOR READING THE APPLICATION ID WORDCommand
(Binary)Data(Hex) Description
Step 1: Exit the Reset vector.000000000000
000000040200000000
NOPGOTO 0x200NOP
Step 2: Initialize the TBLPAG register and the Read Pointer (W0) for the TBLRD instruction.000000000000000000000000000000000000
2008008802A020FF00207841000000BA0890000000000000000000
MOV #0x80, W0 MOV W0, TBLPAGMOV #0xFF0, W0 MOV #VISI, W1 NOP TBLRDL [W0], [W1] NOPNOPNOP
Step 3: Output the VISI register using the REGOUT command.0001 Clock out the contents of the VISI register.
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4.4 Entering Enhanced ICSP ModeAs illustrated in Figure 4-3, entering Enhanced ICSPProgram/Verify mode requires three steps:
1. The MCLR pin is briefly driven high and thenlow.
2. A 32-bit key sequence is clocked into PGEDx.3. MCLR is then driven high within a specified
period of time and held.
The programming voltage applied to MCLR is VIH,which is essentially VDD in PIC24FJ256GA412/GB412family devices. There is no minimum time requirementfor holding at VIH. After VIH is removed, an interval of atleast P18 must elapse before presenting the keysequence on PGEDx.
The key sequence is a specific 32-bit pattern,‘0100 1101 0100 0011 0100 1000 0101 0000’(more easily remembered as 0x4D43 4850 in hexa-decimal format). The device will enter Program/Verifymode only if the key sequence is valid. The MostSignificant bit (MSb) of the most significant nibble mustbe shifted in first.
Once the key sequence is complete, VIH must beapplied to MCLR and held at that level for as long asProgram/Verify mode is to be maintained. An intervaltime of at least P19, P7 and P1 * 5 must elapse beforepresenting data on PGEDx. During the P7 interval, theprogrammer’s PGEDx and PGECx lines must betri-stated.
On successful entry, the program memory can beaccessed and programmed in serial fashion. While inthe Program/Verify mode, all unused I/Os are placed inthe high-impedance state.
4.5 Blank CheckThe term, “Blank Check”, implies verifying that thedevice has been successfully erased and has noprogrammed memory locations. A blank or erasedmemory location is always read as ‘1’. The Device ID registers (0xFF 0000:0xFF 0002) can beignored by the Blank Check, since this region storesdevice information that cannot be erased. Additionally,all unimplemented memory space should be ignored bythe Blank Check.
The QBLANK command is used for the Blank Check. Itdetermines if the code memory is erased by testingthese memory regions. A ‘BLANK’ or ‘NOT BLANK’response is returned. If it is determined that the deviceis not blank, it must be erased before attempting toprogram the chip.
FIGURE 4-3: ENTERING ENHANCED ICSP™ MODE
MCLR
PGEDx
PGECx
VDD
P6P14
b31 b30 b29 b28 b27 b2 b1 b0b3...
Program/Verify Entry Code = 4D434850h
P1AP1B
P18
P19
0 1 0 0 1 0 0 0 0
P7VIH VIH
P21 P1 * 5
PGEDx/PGECx must bein a High-Impedance State
During P7 Interval
X
X
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4.6 Code Memory Programming
4.6.1 PROGRAMMING METHODOLOGYThere are two commands that can be used forprogramming code memory when utilizing the PE. ThePROG2W command programs and verifies two 24-bitinstruction words into the program memory, starting at theaddress specified. The second and faster command,PROGP, allows up to 64 instruction words (each 24 bits) tobe programmed and verified into program memory,starting at the address specified. See Section 6.0 “TheProgramming Executive” for a full description of each ofthese commands.
FIGURE 4-4: FLOWCHART FOR DOUBLE-WORD PROGRAMMING
Figure 4-4 and Figure 4-5 show the programmingmethodology for the PROG2W and PROGP commands. Inboth instances, 87552 instruction words of the deviceare programmed.
FIGURE 4-5: FLOWCHART FOR MULTIPLE WORD PROGRAMMING
BaseAddress = 0hRemainingCmds = 43776
Start
FailureReport ErrorEnd
Yes
No
RemainingCmds =RemainingCmds – 1
Yes
PASS?
No
BaseAddressCommand to Program
Send PROG2W
RemainingCmdsIs
‘0’?
BaseAddress + 0x04BaseAddress =
PROG2W ResponseIs
Note: If a bootloader needs to be programmed,its code must not be programmed into thefirst page of code memory. For example, ifa bootloader located at address, 0x200,attempts to erase the first page, it wouldinadvertently erase itself. Instead,program the bootloader into the secondpage (e.g., 0x400).
BaseAddress = 0hRemainingCmds = 684
Start
FailureReport ErrorEnd
Yes
No
RemainingCmds =RemainingCmds – 1
Yes
PASS?
No
BaseAddressCommand to Program
Send PROGP
RemainingCmdsIs
‘0’?
BaseAddress + 0x100BaseAddress =
PROGP responseIs
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4.7 Configuration Bit ProgrammingConfiguration bits are programmed one at a time usingthe PROG2W command. This command specifies theconfiguration data and address. When Configurationbits are programmed, any unimplemented bits must beprogrammed with a ‘1’. Multiple PROG2W commands are required to program allConfiguration bits. A flowchart for Configuration bitprogramming is shown in Figure 4-6.
FIGURE 4-6: CONFIGURATION BIT PROGRAMMING FLOW
4.8 Programming VerificationAfter code memory is programmed, the contents ofmemory can be verified to ensure that programmingwas successful. Verification requires code memory tobe read back and compared against the copy held inthe programmer’s buffer.
The READP command can be used to read back all theprogrammed code memory and Configuration Words.
Alternatively, you can have the programmer performthe verification after the entire device is programmedusing a checksum computation.
See Section 9.0 “Checksum Computation” for moreinformation on calculating the checksum.
4.9 Exiting Enhanced ICSP ModeExiting Program/Verify mode is done by removing VIHfrom MCLR, as illustrated in Figure 4-7. The onlyrequirement for exit is that an interval, P16, shouldelapse between the last clock, and program signals onPGECx and PGEDx before removing VIH.
FIGURE 4-7: EXITING ENHANCED ICSP™ MODE
Send PROG2WCommand
IsPROG2W Response
PASS?
No
Yes
No
FailureReport Error
Start
End
Yes
LastConfiguration
Byte?
ConfigAddress =ConfigAddress +
0x04
MCLR
P16
PGEDx
PGEDx = Input
PGECx
VDD
VIH
VIH
P17
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5.0 PROGRAMMING THE PROGRAMMING EXECUTIVETO MEMORY
5.1 OverviewIf it is determined that the PE is not present in executivememory (as described in Section 4.2 “Confirming thePresence of the Programming Executive”), the PEmust be programmed to executive memory.
Figure 5-1 shows the high-level process of program-ming the PE into executive memory. First, ICSP modemust be entered, and executive memory and usermemory are erased; then, the PE is programmed andverified. Finally, ICSP mode is exited.
FIGURE 5-1: HIGH-LEVEL PROGRAMMING EXECUTIVE PROGRAM FLOW
5.2 Erasing Executive MemoryExecutive memory is erased by a series of Page Eraseoperations, as shown in Figure 5-2. This consists ofseveral cycles of setting NVMCON to 0x400E, execut-ing the programming cycle and repeating these stepsfor each page of executive memory.
Table 5-1 illustrates the ICSP programming process forChip Erasing memory.
FIGURE 5-2: PAGE ERASE FLOW
Note: The Programming Executive (PE) can beobtained from each device page on theMicrochip website: www.microchip.com.
Start
End
Read/Verify the
Program the
Enter ICSP™ mode
Erase
Programming Executive
Programming Executive
Memory
Exit ICSP mode
Note: The PE must always be erased before itis programmed, as shown in Figure 5-1.
Start
i = 4Address = 0x80 0000
Write 0x4003
Set WR Bit
Delay P11 + P10
i = 0?
i = i – 1
N
End
Y
Address =
to NVMCON
to Initiate EraseAddress + 512
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TABLE 5-1: SERIAL INSTRUCTION EXECUTION FOR ERASING EXECUTIVE MEMORYCommand
(Binary)Data
(Hex) Description
Step 1: Exit the Reset vector.0000000000000000
000000040200000000000000
NOPGOTO 0x200NOPNOP
Step 2: Set the NVMCON register to erase a page.00000000
240030883B00
MOV #0x4003, W0MOV W0, NVMCON
Step 3: Load the address of the page to be erased into the NVMADR register pair.0000000000000000
200004883B14200800883B20
MOV #0000, W4MOV W4, NVMADRMOV #0080, W0MOV W0, NVMADRU
Step 4: Set the WR bit.00000000000000000000000000000000
200550883B30200AA0883B30A8E761000000000000000000
MOV #0x55, W0MOV W0, NVMKEYMOV #0xAA, W0MOV W0, NVMKEYBSET NVMCON, #WRNOPNOPNOP
Step 5: Repeat this step to poll the WR bit until it is cleared by hardware.0000000000000000000000010000
040200000000803B02883C22000000
000000
GOTO 0x200NOPMOV NVMCON, W2MOV W2, VISINOPClock out the contents of the VISI register.NOP
Step 6: Increment W4 by 1024 (0x400).000000000000
204003418204883B24
MOV #0x400, W3ADD W3, W4, W4MOV W4, NVMADRU
Step 7: Repeat Steps 4-6 until the entire test memory has been erased.Step 8: Clear the WREN bit.
00000000
803B02 883B00
MOV NVMCON, W2MOV W0, NVMCON
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5.3 Program the Programming Executive
Storing the PE to executive memory is similar to normalprogramming of code memory. The executive memorymust first be erased, and then programmed, usingeither two-word writes (two instruction words) or rowwrites (64 instruction words). The control flow for bothmethods is identical to that for programming codememory, as shown in Figure 3-7.
Table 5-2 and Table 5-3 illustrate the ICSP programmingprocesses for PE memory. To minimize programmingtime, the same packed data format that the PE uses isutilized. See Section 6.2 “Programming ExecutiveCommands” for more details on the packed dataformat.
TABLE 5-2: PROGRAMMING THE PROGRAMMING EXECUTIVE (TWO-WORD LATCH WRITES)
Command(Binary)
Data(Hex) Description
Step 1: Exit the Reset vector.000000000000
000000040200000000
NOPGOTO 0x200NOP
Step 2: Initialize the TBLPAG register for writing to the latches.00000000
200FAC8802AC
MOV #0xFA, W12MOV W12, TBLPAG
Step 3: Load W0:W2 with the next two packed instruction words to program.000000000000
2xxxx02xxxx12xxxx2
MOV #, W0MOV #, W1MOV #, W2
Step 4: Set the Read Pointer (W6) and the Write Pointer (W7), and load the write latches.0000000000000000000000000000000000000000000000000000000000000000
EB0300000000EB0380000000BB0BB6000000000000BBDBB6000000000000BBEBB6000000000000BB1BB6000000000000
CLR W6NOPCLR W7NOPTBLWTL [W6++], [W7] NOPNOPTBLWTH.B [W6++], [W7++] NOPNOPTBLWTH.B [W6++], [++W7] NOPNOPTBLWTL.W [W6++], [W7++] NOP NOP
Step 5: Set the NVMADRU/NVMADR register pair to point to the correct row.0000000000000000
2xxxx32xxxx4883B13883B24
MOV #DestinationAddress, W3MOV #DestinationAddress, W4MOV W3, NVMADRMOV W4, NVMADRU
Step 6: Set the NVMCON register to program two instruction words.00000000000000000000
24001A000000883B0A000000000000
MOV #0x4001, W10NOPMOV W10, NVMCONNOPNOP
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Step 7: Initiate the write cycle.0000000000000000000000000000000000000000
200551883B31200AA1883B31A8E761000000000000000000000000000000
MOV #0x55, W1MOV W1, NVMKEYMOV #0xAA, W1MOV W1, NVMKEYBSET NVMCON, #WRNOPNOPNOPNOPNOP
Step 8: Wait for program operation to complete and make sure the WR bit is clear.000000000000000000000001000000000000
—
000000803B00000000883C20000000
000000040200000000
—
NOPMOV NVMCON, W0NOPMOV W0, VISINOPClock out the contents of the VISI register.NOPGOTO 0x200NOPRepeat until the WR bit is clear.
Step 9: Repeat Steps 3-8 until all code memory is programmed.Step 10: Clear the WREN bit.
00000000
803B02 883B00
MOV NVMCON, W2MOV W0, NVMCON
TABLE 5-2: PROGRAMMING THE PROGRAMMING EXECUTIVE (TWO-WORD LATCH WRITES) (CONTINUED)
Command(Binary)
Data(Hex) Description
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TABLE 5-3: PROGRAMMING THE PROGRAMMING EXECUTIVE (ROW WRITES)Command
(Binary)Data(Hex) Description
Step 1: Exit the Reset vector.000000000000
000000040200000000
NOPGOTO 0x200NOP
Step 2: Set the NVMCON register to program 64 instruction words.00000000
240020883B00
MOV #0x4002, W0MOV W0, NVMCON
Step 3: Initialize the TBLPAG register for writing to the latches.00000000
200FAC8802AC
MOV #0xFA, W12MOV W12, TBLPAG
Step 4: Load W0:W5 with the next 4 instruction words to program.000000000000000000000000
2xxxx02xxxx12xxxx22xxxx32xxxx42xxxx5
MOV #, W0MOV #, W1MOV #, W2MOV #, W3MOV #, W4MOV #, W5
Step 5: Set the Read Pointer (W6) and load the (next set of) write latches.0000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000
EB0300000000EB0380000000BBDBB6000000000000BBEBB6000000000000BB1BB6000000000000BB0BB6000000000000BBDBB6000000000000BBEBB6000000000000BB1BB6000000000000
CLR W6NOPCLR W7NOPTBLWTL [W6++], [W7]NOPNOPTBLWTH.B [W6++], [++W7]NOPNOPTBLWTL [W6++], [W7++]NOPNOPTBLWTL [W6++], [W7]NOPNOPTBLWTH.B [W6++], [W7++]NOPNOPTBLWTH.B [W6++], [++W7]NOPNOPTBLWTL [W6++], [W7++]NOPNOP
Step 6: Repeat Steps 4 and 5, for a total of 16 times, to load the write latches with 64 instructions.Step 7: Set the NVMADRU/NVMADR register pair to point to the correct address.
0000000000000000
2xxxx32xxxx4883B13883B24
MOV #DestinationAddress, W3MOV #DestinationAddress, W4MOV W3, NVMADRMOV W4, NVMADRU
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Step 8: Execute the WR bit unlock sequence and initiate the write cycle.0000000000000000000000000000000000000000
200551883B31200AA1883B31A8E761000000000000000000000000000000
MOV #0x55, W1MOV W1, NVMKEYMOV #0xAA, W1MOV W1, NVMKEYBSET NVMCON, #WRNOPNOPNOPNOPNOP
Step 9: Repeat this step to poll the WR bit until it is cleared by hardware.0000000000000000000000010000
040200 000000 803B00 883C20 000000
000000
GOTO 0x200NOPMOV NVMCON, W0MOV W0, VISINOPClock out the contents of the VISI register.NOP
Step 10: Reset the device’s internal Program Counter.00000000
040200000000
GOTO 0x200NOP
Step 11: Repeat Steps 3 through 9 until all code memory is programmed.Step 12: Clear the WREN bit.
00000000
803B02 883B00
MOV NVMCON, W2MOV W0, NVMCON
TABLE 5-3: PROGRAMMING THE PROGRAMMING EXECUTIVE (ROW WRITES) (CONTINUED)Command
(Binary)Data(Hex) Description
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5.4 Reading Executive MemoryReading from executive memory is performed byexecuting a series of TBLRD instructions and clockingout the data using the REGOUT command.Table 5-4 shows the ICSP programming details forreading executive memory.
To minimize reading time, the same packed data formatthat the PE uses is utilized. See Section 6.2“Programming Executive Commands” for moredetails on the packed data format.
TABLE 5-4: SERIAL EXECUTION FOR READING EXECUTIVE MEMORYCommand
(Binary)Data
(Hex) Description
Step 1: Exit the Reset vector.000000000000
000000040200000000
NOPGOTO 0x200NOP
Step 2: Initialize the TBLPAG register and the Read Pointer (W6) for the TBLRD instruction.000000000000
200xx08802A02xxxx6
MOV #, W0MOV W0, TBLPAGMOV #, W6
Step 3: Initialize the Write Pointer (W7) and store the next four locations of code memory in W0:W5.00000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000
EB0380000000BA1B96000000000000BADBB6000000000000BADBD6000000000000BA1BB6000000000000BA1B96000000000000BADBB6000000000000BADBD6000000000000BA0BB6000000000000
CLR W7NOPTBLRDL [W6], [W7++]NOPNOPTBLRDH.B [W6++], [W7++]NOPNOPTBLRDH.B [++W6], [W7++]NOPNOPTBLRDL [W6++], [W7++]NOPNOPTBLRDL [W6], [W7++]NOPNOPTBLRDH.B [W6++], [W7++]NOPNOPTBLRDH.B [++W6], [W7++]NOPNOPTBLRDL [W6++], [W7]NOPNOP
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Step 4: Output W0:W5 using the VISI register and the REGOUT command.000000000001000000000000000100000000000000010000000000000001000000000000000100000000000000010000
883C20000000
000000883C21000000
000000883C22000000
000000883C23000000
000000883C24000000
000000883C25000000
000000
MOV W0, VISINOPClock out the contents of the VISI register.NOPMOV W1, VISINOPClock out the contents of the VISI register.NOPMOV W2, VISINOPClock out the contents of the VISI register.NOPMOV W3, VISINOPClock out the contents of the VISI register.NOPMOV W4, VISINOPClock out the contents of the VISI register.NOPMOV W5, VISINOPClock out the contents of the VISI register.NOP
Step 5: Reset the device’s internal Program Counter.000000000000
000000040200000000
NOPGOTO 0x200NOP
Step 6: Repeat Steps 3 through 5 until all desired code memory is read (note that “Reset the device’s internal Program Counter” will be Step 5).
TABLE 5-4: SERIAL EXECUTION FOR READING EXECUTIVE MEMORY (CONTINUED)Command
(Binary)Data
(Hex) Description
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5.5 Verify Programming ExecutiveThe verify step involves reading back the executivememory space and comparing it against the copy heldin the programmer’s buffer.
The verify process is illustrated in Figure 5-3. The lowerword of the instruction is read, and then the lower byteof the upper word is read and compared against theinstruction stored in the programmer’s buffer. Refer toSection 5.4 “Reading Executive Memory” forimplementation details of reading executive memory.
FIGURE 5-3: VERIFY PROGRAMMING EXECUTIVE MEMORY FLOW
Read Low Word
Read High Byte
Does
= ExpectedData?
AllExecutive Memory
Verified?
No
Yes
No
Set TBLPTR = 0
Start
Yes
End
with Post-Increment
with Post-Increment
FailureReport Error
Instruction Word
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6.0 THE PROGRAMMING EXECUTIVE
6.1 Programming Executive Communication
The programmer and PE have a master-slaverelationship, where the programmer is the masterprogramming device and the PE is the slave.
All communication is initiated by the programmer in theform of a command. Only one command at a time canbe sent to the PE. In turn, the PE only sends oneresponse to the programmer after receiving andprocessing a command. The PE command set isdescribed in Section 6.2 “Programming ExecutiveCommands”. The response set is described inSection 6.3 “Programming Executive Responses”.
6.1.1 COMMUNICATION INTERFACE AND PROTOCOL
The ICSP/Enhanced ICSP interface is a 2-wire SPI,implemented using the PGECx and PGEDx pins. ThePGECx pin is used as a clock input pin and the clocksource must be provided by the programmer. ThePGEDx pin is used for sending command data to andreceiving response data from the PE.
Since a 2-wire SPI is used, and data transmissions arebidirectional, a simple protocol is used to control thedirection of PGEDx. When the programmer completesa command transmission, it releases the PGEDx lineand allows the PE to drive this line high. The PE keepsthe PGEDx line high to indicate that it is processing thecommand.
FIGURE 6-1: PROGRAMMING EXECUTIVE SERIAL TIMING
After the PE has processed the command, it bringsPGEDx low (P9B) to indicate to the programmerthat the response is available to be clocked out. Theprogrammer can begin to clock out the response after a maximum wait (P9B) and it must provide the necessaryamount of clock pulses to receive the entire responsefrom the PE.
After the entire response is clocked out, theprogrammer should terminate the clock on PGECx untilit is time to send another command to the PE. Thisprotocol is illustrated in Figure 6-2.
6.1.2 SPI RATEIn Enhanced ICSP mode, PIC24FJ256GA412/GB412family devices operate from the Fast Internal RC (FRC)oscillator, which has a nominal frequency of 8 MHz.This oscillator frequency yields an effective systemclock frequency of 4 MHz. To ensure that theprogrammer does not clock too fast, it is recommendedthat a 2 MHz clock be provided by the programmer.
FIGURE 6-2: PROGRAMMING EXECUTIVE – PROGRAMMER COMMUNICATION PROTOCOL
Note: For Enhanced ICSP, all serial data istransmitted on the falling edge of PGECxand latched on the rising edge of PGECx.All data transmissions are sent to the MSbfirst using 16-bit mode (see Figure 6-1).
PGECx
PGEDx
1 2 3 11 13 15 161412
LSb14 13 12 11
4 5 6
MSb 123... 45
P2
P3
P1
P1BP1A
1 2 15 16 1 2 15 16
PGECx
PGEDx
PGECx = Input PGECx = Input (Idle)
Host TransmitsLast Command Word
PGEDx = Input PGEDx = Output
P8
1 2 15 16
MSB X X X LSB1 0P9b
PGECx = InputPGEDx = Output
P9a
Programming ExecutiveProcesses Command Host Clocks Out Response
Note 1: A delay of 25 ms is required between commands.
MSB X X X LSB MSB X X X LSB
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6.1.3 TIME-OUTSThe PE uses no Watchdog Timer or time-out for transmit-ting responses to the programmer. If the programmerdoes not follow the flow control mechanism, using PGECxas described in Section 6.1.1 “Communication Inter-face and Protocol”, it is possible that the PE will behaveunexpectedly while trying to send a response to the pro-grammer. Since the PE has no time-out, it is imperativethat the programmer correctly follow the describedcommunication protocol.
As a safety measure, the programmer should use thecommand time-outs identified in Table 6-1. If thecommand time-out expires, the programmer shouldreset the PE and start programming the device again.
6.2 Programming Executive Commands
The PE command set is shown in Table 6-1. This tablecontains the opcode, mnemonic, length, time-outand description for each command. Functionaldetails on each command are provided in thecommand descriptions (Section 6.2.4 “CommandDescriptions”).
6.2.1 COMMAND FORMATAll PE commands have a general format, consisting ofa 16-bit header and any required data for the command(see Figure 6-3). The 16-bit header consists of a 4-bitopcode field, which is used to identify the command,followed by a 12-bit command length field.
FIGURE 6-3: COMMAND FORMAT
The command opcode must match one of those in thecommand set. Any command that is received whichdoes not match the list in Table 6-1 will return a “NACK”response (see Section 6.3.1.1 “Opcode Field”). The command length is represented in 16-bit words sincethe SPI operates in 16-bit mode. The PE uses the com-mand length field to determine the number of words toread from the SPI port. If the value of this field is incorrect,the command will not be properly received by the PE.
TABLE 6-1: PROGRAMMING EXECUTIVE COMMAND SET
15 12 11 0
Opcode Length
Command Data First Word (if required)
•
•
Command Data Last Word (if required)
Opcode Mnemonic Length(16-bit words) Time-out Description
0x0 SCHECK 1 1 ms Sanity check.0x1 READC 3 1 ms Read an 8-bit word from the specified Configuration register
or Device ID register.0x2 READP 4 1 ms/row Read ‘N’ 24-bit instruction words of primary Flash memory,
starting from the specified address.0x3 PROG2W 6 5 ms Program a double instruction word of code memory at the
specified address and verify.0x4 Reserved N/A N/A This command is reserved; it will return a NACK.0x5 PROGP 99 5 ms Program 64 words of program memory at the specified
starting address, then verify.0x6 Reserved N/A N/A This command is reserved; it will return a NACK.0x7 ERASEB 1 125 ms Chip Erase the device.0x8 Reserved N/A N/A This command is reserved; it will return a NACK.0x9 ERASEP 3 25 ms Command to erase a page.0xA Reserved N/A N/A This command is reserved; it will return a NACK.0xB QVER 1 1 ms Query the PE software version.0xC CRCP 5 1s Performs a CRC-16 on the specified range of memory.0xD Reserved N/A N/A This command is reserved; it will return a NACK.0xE QBLANK 5 700 ms Query to check whether the code memory is blank.
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6.2.2 PACKED DATA FORMATWhen 24-bit instruction words are transferred acrossthe 16-bit SPI interface, they are packed to conservespace using the format illustrated in Figure 6-4. Thisformat minimizes traffic over the SPI and provides thePE with data that is properly aligned for performingTable Write operations.
FIGURE 6-4: PACKED INSTRUCTION WORD FORMAT
6.2.3 PROGRAMMING EXECUTIVE ERROR HANDLING
The PE will “NACK” all unsupported commands. Addi-tionally, due to the memory constraints of the PE, nochecking is performed on the data contained in theprogrammer command. It is the responsibility of theprogrammer to command the PE with valid commandarguments or the programming operation may fail.Additional information on error handling is provided inSection 6.3.1.3 “QE_Code Field”.
6.2.4 COMMAND DESCRIPTIONSAll commands supported by the PE are described inSection 6.2.4.1 “SCHECK Command” throughSection 6.2.4.10 “QBLANK Command”.6.2.4.1 SCHECK Command
Table 6-2 shows the description for the SCHECKcommand.
TABLE 6-2: COMMAND DESCRIPTION
The SCHECK command instructs the PE to do nothingbut generate a response. This command is used as a“Sanity Check” to verify that the PE is operational.
Expected Response (2 words):0x1000 0x0002
Note: When the number of instruction wordstransferred is odd, MSB2 is zero andLSW2 cannot be transmitted.
15 8 7 0LSW1
MSB2 MSB1LSW2
LSWx: Least Significant 16 bits of instruction wordMSBx: Most Significant Byte of instruction word
15 12 11 0Opcode Length
Field Description
Opcode 0x0Length 0x1
Note: This instruction is not required forprogramming, but is provided fordevelopment purposes only.
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6.2.4.2 READC Command
Table 6-3 shows the description for the READCcommand.
TABLE 6-3: COMMAND DESCRIPTION
The READC command instructs the PE to read N Con-figuration registers or Device ID registers, starting fromthe 24-bit address specified by Addr_MSB andAddr_LS. This command can only be used to read 8-bitor 16-bit data.
When this command is used to read Configurationregisters, the upper byte in every data word returnedby the PE is 0x00 and the lower byte contains theConfiguration register value.
Expected Response (4 + 3 * (N – 1)/2 words for N odd):
0x1100
2 + N
Configuration register or Device ID Register 1
...
Configuration register or Device ID Register N
6.2.4.3 READP Command
Table 6-4 shows the description for the READPcommand.
TABLE 6-4: COMMAND DESCRIPTION
The READP command instructs the PE to read N 24-bitwords of code memory, starting from the 24-bit addressspecified by Addr_MSB and Addr_LS. This commandcan only be used to read 24-bit data. All data returnedin response to this command uses the packed dataformat described in Section 6.2.2 “Packed DataFormat”.Expected Response (2 + 3 * N/2 words for N even):
0x1200
2 + 3 * N/2
Least Significant Program Memory Word 1
...
Least Significant Data Word N
Expected Response (4 + 3 * (N – 1)/2 words for N odd):
0x1200
4 + 3 * (N – 1)/2Least Significant Program Memory Word 1
...
MSB of Program Memory Word N (zero-padded)
15 12 11 8 7 0Opcode Length
N Addr_MSBAddr_LS
Field Description
Opcode 0x1Length 0x3N Number of 8-bit Configuration registers
or Device ID registers to read (maximum of 256)
Addr_MSB MSB of 24-bit source address.Addr_LS Least Significant 16 bits of 24-bit
source address
Note: Reading unimplemented memory willcause the PE to reset. To prevent this fromoccurring, ensure that only memory loca-tions present on a particular device ar