30
Silicon Sensor International AG Photodiodes for the 21st Century www.silicon-sensor.com Tel. +49(0)30/6399 2399

Photodiodes for the 21st Century Silicon Sensor ... - CERN

  • Upload
    others

  • View
    5

  • Download
    0

Embed Size (px)

Citation preview

Page 1: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Silicon Sensor International AGPhotodiodes for the 21st Century

www.silicon-sensor.com

Tel. +49(0)30/6399 2399

Page 2: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Welcome to the Silicon Sensor Group

Subsidiaries:

Custom & OEM Solutions

Si-PIN Photodiodes,Si-APD

Systems,Modules

Sensor Packaging Optical and Micro Mechanical Sensor Systems

Sensor Packaging Sensor Systems, Modules

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 2

Silicon Sensor 1991 Gründung LME kam zur Gruppe Ende 2000 MPD kam zur Gruppe Ende 2005 PSS 1999 Gründung Silicon Instruments 1998 Gründung SMS Silicon Micro Sensors gegründet Jan 2007
Page 3: Photodiodes for the 21st Century Silicon Sensor ... - CERN

What we are:

We solve the problems of our customers!

§ Manufacturer of highly sophisticated customised optical sensors, sensor systems and sensor applications

§ Manufacturer of high reliability custom-made hybrids

§ Strong position in the field of customised optosensors

§ Offering the whole product lifecycle: Design to Full –System Assembly

§ Own production plants in Europe and US

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 3

Page 4: Photodiodes for the 21st Century Silicon Sensor ... - CERN

History and Facts

Turnover : 45 Mill. Euro (2008)

Personnel: 300 employees worldwide

Distributors: in 8 countries

§ 1991 Formation of Silicon Sensor GmbH

§ 1999 Silicon Sensor International AG went public

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 4

Umsatzverteilung nach Branchen neu ermitteln! Umsatzänderung 1999 bis heute visualisieren!! Silicon Sensor 1991 Gründung LME kam zur Gruppe Ende 2000 MPD kam zur Gruppe Ende 2005 PSS 1999 Gründung Silicon Instruments 1998 Gründung SMS Silicon Micro Sensors gegründet Jan 2007
Page 5: Photodiodes for the 21st Century Silicon Sensor ... - CERN

0

5,000

10,000

15,000

20,000

25,000

30,000

35,000

40,000

45,000

50,000

1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008

Sound growth

Total sales of Silicon Sensor group before consolidation, € 1,000

Turnover : 45 Mill. Euro (2008)Personnel: 300 employeesDistributors: in 8 countries

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 5

Page 6: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Silicon Sensor Group

Subsidiaries:

Custom & OEM Solutions

Si-PIN Photodiodes,Si-APD

Systems,Modules

Sensor Packaging Optical and Micro Mechanical Sensor Systems

Sensor Packaging Sensor Systems, Modules

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 6

Page 7: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Our core capabilities

Location: Oberdischingen (near Ulm / Germany)Founded: 1967

Focus:Design and manufacturing of customized high-rel electronic circuits

Inhouse Technologies§ Hybrid technology, MCM, COB§ Die- and wirebonding§ Bare die and SMD soldering§ Hermetic Encapsulation § Electrical testing, dc to 50 GHz§ Screening / Qualifications§ High accuracy fibre assembly

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 7

Page 8: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Our core capabilities

Location: DresdenFounded: 2007

Focus:Develop, design and produce state of the art customer specific optical and micro mechanical sensor systems

Inhouse Technologies§ Optical Sensor Systems: Camera

§ Extreme temperature range and cycling capability

§ High mechanical stress sustainability§ Wide voltage range tolerance

§ MEMS: Pressure Transducers

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 8

Page 9: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Our core capabilities

§ Subsidiary since 1999 § Located in Westlake Village, California, USA§ Distributing the whole product range§ Support in development of customized photodiodes

Focus§ Hybrid Modules§ Customized Packaging§ Smart Detector Boards

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 9

Page 10: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Our core capabilities

Microelectronic Packaging DresdenLocation: DresdenFounded: 1966

Focus:Design and manufacturing of electronic microsystems

Process Development

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 10

Page 11: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Developing and Manufacturing OEM and custom solutions for application fields such as:

§ Industrial

§ Life Sciences, Health Care

§ Automotive industry

§ Aerospace and Defense

§ Commercial and Consumer

§ X-Ray

What we do:

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 11

Page 12: Photodiodes for the 21st Century Silicon Sensor ... - CERN

What we do:

Industrial

• Automation• Motion Control• Distance

Measurement• Range Finding• Speed Control• Laser Levelling• Proximity Sensors

Life ScienceHealth Care

• Medical Imaging• Blood Control• Pulse Oximetry• Nuclear Imaging• Water Analysis• Ophthalmology• Gamma Detection

Automotive

• LIDAR• ACC• Pre Crash Detect.• Blind Spot Detect.• Communication • Virtual Controls• Solar Altitude Det.

AerospaceDefense/Security

• Mars Camera• Baggage Control• Laser Guidance• Simulation Tools• FoF Systems• Laser Range

Finder• Nuclear Radiation

Sensors

Developing and Manufacturing OEM and custom solutions for application fields such as:

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 12

Page 13: Photodiodes for the 21st Century Silicon Sensor ... - CERN

What we offer:

§ Chip geometry – to suit your application§ Responsivity – optimised for your operating wavelength § Risetime – to meet your bandwidth requirements§ Capacitance – to reduce noise§ Dark current – to improve sensitivity

SIS AG offers complete custom facilities for optimization of Electro-Optical performance

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 13

Page 14: Photodiodes for the 21st Century Silicon Sensor ... - CERN

§ A.R. coating – to reduce optical losses§ Filtering – for reduction of ambient light effects§ Integration – Electronics for amplification and signal processing

§ Packaging – to optimise cost vs. performance

What we offer:

All the above can be included in your custom design! Take advantage our wide custom capabilities to achieve the optimum solution.

SIS AG offers complete custom facilities for optimizationof Electro-Optical performance

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 14

Page 15: Photodiodes for the 21st Century Silicon Sensor ... - CERN

References

Polymer Systems

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 15

Page 16: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Silicon Sensor International AG

Peter-Behrens-Str. 15D-12459 Berlin

Telefon: +49(0)30 / 63 99 23 – 99Telefax: +49(0)30 / 63 99 23 – 33

Email: [email protected]: www.silicon-sensor.de

Thank You

Page 17: Photodiodes for the 21st Century Silicon Sensor ... - CERN

§ government applications (e.g. baggage control, traffic speed control and monitoring)

§ communications (e.g. optical fiber measurement systems, free space optical communication)

§ graphics industry/semiconductor industry (e.g. automatic exposure control)

§ military applications (e.g. training systems,simulation systems, weapon guidance systems)

What we do:

Custom-made Optosensors and Hybrids for:

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 17

Page 18: Photodiodes for the 21st Century Silicon Sensor ... - CERN

§ Chip geometry – to suit your application§ Responsivity – optimised for your operating wavelength § Risetime – to meet your bandwidth requirements§ Capacitance – to reduce noise§ Dark current – to improve sensitivity§ A.R. coating – to reduce optical losses§ Filtering – for reduction of ambient light effects§ Integration – Electronics for amplification and signal processing

§ Packaging – to optimise cost vs. performance

What we offer:

All the above can be included in your custom design! Take advantage our wide custom capabilities to achieve the optimum solution.

SIS AG offers complete custom facilities for optimisationof Electro-Optical performance

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 18

Page 19: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Chip Design

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 19

Page 20: Photodiodes for the 21st Century Silicon Sensor ... - CERN

APD Arrays

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 20

Page 21: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Avalanche Photodiode Modules

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 21

Page 22: Photodiodes for the 21st Century Silicon Sensor ... - CERN

For machine tools:

linear encoders

rotary encoders

angular encoders

For medical technology:

blood sugar control (self control)

Applications PIN – Photodiodes

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 22

Page 23: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Distance measuring lasers (red)

Range finders (NIR)

Automation for industry

Security applications

Applications Avalanche –Photodiodes

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 23

Page 24: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Applications APD –Linear Arrays

ESA – Marsrover (3D - Camera)

Traffic Control (Scanner)

Adaptive Cruise Control

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 24

Page 25: Photodiodes for the 21st Century Silicon Sensor ... - CERN

§ NEW 1064 nm PIN

§ NEW 1064 nm APD

Photodiodes for target finders

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 25

Page 26: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Sales Strategy

Distributors:China, Israel, Great Britain, France,

Italy, Austria, India, Japan

Distribution Alliance with Mouser.com (online selling)

Head Office Germany:

International Sales

Subsidiary Pacific Silicon Sensor, Inc.

responsible for the US Market

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 26

Page 27: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Pacific Silicon Sensor, Inc.Responsible for the US market

§ Subsidiary since 1999 § Located in Westlake Village, California, USA§ Distributing the whole product range§ Support in development of customized photodiodes

Core Capabilities

§ Hybrid Modules§ Customized Packaging§ Smart Detector Boards

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 27

Page 28: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Distributors

Great Britain: APC-Hero Advanced Power

Components plc.

USA: Pacific Silicon Sensor, Inc.

France: OPTOPRIM

Germany: Gigahertz-Optik

GmbH

Israel:ODEM

Technologies Ltd.

Shenzhen Valueplus2 Electronic Corp., Ltd.

China: Light Catcher

Co.,Ltd.Pinnacle Scientific

Corporation

Austria: Roithner

Lasertechnik

Italy: Laser Optronic

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 28

Page 29: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Our Unique Selling Proposition

§ 30+ years of experience and know how

§ Highly trained and motivated staff

§ New technologies & ongoing R&D

§ High specification sensors

§ Successful expansion into world market

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 29

Page 30: Photodiodes for the 21st Century Silicon Sensor ... - CERN

Photodiode

Avalanche Photodiode

Equivalent Circuit

Equivalent Circuit

IPh ~ P

M x IPh ~ P

SiO2

N+

P+

Active Area Diameter

AR Coating

Depletion Region

N-Type Substrate

Contact Metal

Cathode (-)

Anode (+)

light input

avalanche region metal M1

X micronsn-diode

FOX

n+ channel stop diff. backside metal

p-substrate

p-epi

Principles

23.02.2010

5th Trento Workshop, Manchester UK, Dr. Marc Schillgalies

Slide 30