Peter K. Steimer, Corporate Research Fellow , RD.S Power …web.geni-pco.com/icpe2015/download/Plenary_Talk_3_Dr... · 2015-06-18 · High Power Electronics Innovation Peter K. Steimer,

High Power ElectronicsInnovation

Peter K. Steimer, Corporate Research Fellow, RD.S Power Electronics, ABB Switzerland Ltd., 03-06-2015

IntroductionWorld’s Consumable Resources

0

16

32

48

64

80

…of

sun

light

hitt

ing

the

earth

Hours…

“Conventional” “Future”

Bre

eder

Rea

ctor

s

References: [1] Electricity in 2030: PV’s Role, Brent P. Nelson, IEEE Energy 2030, Atlanta 2008© ABB Group June 5, 2015 | Slide 2

Solar Hydro Wind

Biomass

IntroductionThe most important Renewables – driven by the Sun

References: [2] Earth’s Annual Global Mean Energy Budget, JT Kiehl and KE Trenberth, Bulletin of the American Meteorological Society, Vol 78, No. 2, February 1997

© ABB Group June 5, 2015 | Slide 3

Energy Efficiency and New RenewablesPower SemiconductorsPower Electronics ApplicationsConclusions


Electrical Energy SystemsEnergy efficiency and 20% new Renewables

CO2 emissions [3]: - 2/3 of the electrical power based on fossil fuels- transportation is second largest contributor

#0: Transition to gas: 2 to 3 times lower emmissions than coal

#1: Energy efficiency from primary energy to end user1. High effciency combined cycle plants (up to 60% efficient)

2. Use of waste heat in bulk power generation (up to 85% efficient)

3. Variable speed drives for pump, fan and compressor applications

4. More electric transportation for scooters, cars, buses, trains, ships

#2: New Renewables (Wind, Solar) will contribute 20% in 2030 1. up to 12% contribution of Wind (2013: 2.5%, CAGR = 10%) [4]

2. up to 7% contribution of Solar (2013: 0.4%, CAGR =15%) [5]

References: [3] World Energy Outlook 2012 (International Energy Agency)[4] Global Wind Energy Forecast 2012-2025 (IHS Emerging energy reserach)[5] Projections on solar power, 2013 (IHS Emerging energy reserach)


# 1: Energy EfficencyPump and fan applications

60 - 65% of industrial electrical energy is consumed by motors

Substantial energy saving by variable speed drives in pump and fan applications [6]

30 to 40% energy saving, when running below nominal flow

Applies to 30% of all industrial pump and fan applications

Globally appr. 2000 TWh of annual energy saving potential

Saved power (VSD)

Losses

Useful work

Flow (%)

Power (%)

0

20

40

60

80

100

120

140

160

0 10 20 30 40 50 60 70 80 90 100

References: [6] Impact of Motor Drives on Energy Efficiency, P. Barbosa, P. Wikstroem, M. Kauhanen, PCIM 07


# 1: Energy EfficencyEnergy saving priorities

#1: ENERGY EFFICIENCY Potential / year

Power generation (installed base)

Use of waste heat 3000 TWh

Transportation (installed base)

Hybrid, 30% savings (equivalent to) 3000 TWh

Industry (installed base)

VSD for pump and fans 2000 TWh

#2: NEW RENEWABLES Potential / year

New Windpower installations

New installations in 2009 – 2020 2000 TWh

References: [7] Enabled by High Power Electronics - Energy efficiency, Renewables and Smart Grids, P. K. Steimer, ECCE Asia (IPEC) 2010


#2 New Renewables90% Renewables scenario for 2050

Electrical energy systems with 90% renewable power generation

References: [8] SCS Energiemodell für die Schweiz, 2013 (Supercomputing Systems)

Running river Hydro

Reservoir HydroPV Solar

Wind

Pumped Hydro

Biomass

Gas

Geothermal

PV: 11 GW

Wind: 2.85 GW

PHP: 5 GW200 GWh

Thermal

week of the year© ABB Group June 5, 2015 | Slide 8

#2 New Renewables Future high penetration of renewables

Combine best of old and new electrical energy systems:

1. Fossil fuel Power plants Combined cycle and gas power plants with more power ramping

2. Extension of grid infrastructure Transmit renewables power over large distances (enabler HVDC)

Voltage stability in distribution grids (V-control, battery storage, DC )

3. Hydro power plants Pumped hydro as «new» energy storage option (4 to 8 hours typical)

4. New renewables Wind prefered due to highest energy return on invested energy

PV Solar prefered due to simple application incl. storage option

CSP attractive due to molten salt thermal storage option© ABB Group June 5, 2015 | Slide 9



IGCT Presspack

IGBT Presspack

High Power ConversionTrends for High Power Semiconductors

0 1 MVA 10 MVA 100 MVA 1 GW

10 kV

6.5 kV

4.5 kV

3.3 kV

1.7 kV

0

Limited plasma (arc protection) infailure mode (SCFM)

High VoltageIGBT / BIGTModule

SCFM: Short-circuit failure mode© ABB Group June 5, 2015 | Slide 11

Higher Efficiency

Dynamic blockingvoltage

Low VoltageIGBT Module

Future Innovations1) 6 inch IGCT2) Enh. Trench SPT IGBT3) LinPak module4) Bi-mode IGBT & IGCT5) SiC MOSFET

Lowest Costs

High Safe Operating Area (SOA) due to corrugated base junction profile

Combined with RC technology up to 6”

Power SemiconductorsHigh performance IGCT technology (HPT)

6 inch HPT RC-IGCT 9.5 kA @ 2.8 kVdc

References: [9] The 150 mm RC-IGCT: a Device for the Highest Power Requirements, T. WikströmM. Arnold, T. Stiasny, C. Waltisberg, H. Ravener, M. Rahimo, IEEE ISPSD 2014


0 1 2 3 40

100

200

Nominal

Cur

rent

(A)

Voltage (V)

T = 25°C T = 150°C

ET-IGBT

EP-IGBT

N-enhancement layer of SPT+ for Trench

Concept avoids hole drainage (low-on-state)

On-state and turn-off

Power SemiconductorsEnhanced Trench SPT

0 1 2 3 4 5 6

-30

-15

0

15

30

45

60

75

0

100

200

300

-500

0

500

1000

1500

2000

2500

3000

Gate

Current

Gat

e vo

ltage

(V)

Time (µs)

Voltage

Cur

rent

(A)

EP-IGBT ET-IGBT

Volta

ge (V

)

Log

dopi

ng c

once

ntra

tion

Log

dopi

ng c

once

ntra

tion

N-Enhancement layer

Emitter P+ well Plasma Increase

References: [10] The next generation high voltage IGBT modules, M. Andenna, Y. Otani, S. Matthias,C. Corvasce, S. Geissmann, A. Kopta, R. Schnell, M. Rahimo, ECCE EPE 2014

x© ABB Group June 5, 2015 | Slide 13

Power SemiconductorsTransistor versus Thyristor

Blocking voltage defines device thickness and related losses

Thyristor has inherently highest plasma in on-state© ABB Group June 5, 2015 | Slide 14

Power semiconductprsNew High Power Module Standard

C1

G1

E1

C1

C2 / E1

G2

E2

E2

14

5

6

2

7

8

39

NTC

Dual Module Concept, 10 nH stray inductance

Ratings (100mm x 140 mm)

typical 1.7 kV ratings up to 2 x 1000A



Designed to accommodate Si and SiC Chips

No derating for parallel connection

References: [11] LinPak, a new low-inductive phaseleg IGBT module with easy paralleling for high powerR. Schnell, S. Hartmann, D. Trüssel, F. Fischer, A. Baschnagel. M. Rahimo, PCIM 2015


BIGT Wafer Backside

Power SemiconductorsBi-mode IGBT technology (BIGT)

Integrates an IGBT & diode in one structure=> Reverse Conducting (RC) IGBT

Lower Losses due to larger Area for IGBT and diode (both usewhole silicon area) or

Higher power density and lower costsReferences: [12] M. Rahimo, et al., “The Bi-mode Insulated Gate Transistor (BiGT) - A Potential

Technology for Higher Power Applications”, ISPSD 2009


Power SemiconductorsBi-mode IGCT technology (BGCT)

Integrates IGBT & diode in one structure=> Reverse Conducting (RC) IGCT

Lower lossesLow leakage currents

References: [13] The Concept of Bi-mode Gate Commutated Thyristor, U. Vemulapati, M Bellini,M. Arnold, M. Rahimo and T. Stiasny, IEEE ISPSD 2012


Power SemiconductorsBi-mode IGCT technology (BGCT)

Optimum design proposed to be at 3:1 GCT- to Diode-segments ratio

Soft diode characteristics

Higher surge current capabilities

Higher thermal cycling capabilities

Higher junction temperatures possible due to lower the leakage current

Significantly reduced thermal resistance as the total device area is utilized in both modes of operation

4’’ BGCT technology sample (91mm)

References: [14] Improving Current Controllability in Bi-mode Gate Commutated Thyristors, Lophitis, N.; Antoniou, M.; Udrea, F.; Vemulapati, U.; Arnold, M.; Nistor, I.; Vobecky, J.; Rahimo, M., IEEE Transactions on Electron Devices, Year: 2015


Mature Sitechnology

1

High Power ConversionSiC technology

Silicon devices up to 10 kV

1. BIGT and BGCT as newhigh power device options

Wide band gap material devices

2. Unipolar 1.2 kV / 1.7 kV devices

3. Extension to 10 kV unipolar SIC devices, up to 20 kHz

4. Later bipolar SiC

Packaging

1. Higher temperature and

2. Higher voltage packaging

[kV]

20

10

5

Si

SiC

10 kV0.3 kHz

1 5 20 [kHz]

2 1.2 – 3.3 kVunipolar SIC

10 kV unipolar10 - 20 kHz

20 kV bipolar




TopologiesSwitch-based Multi Level Converters

3-level inverter (NPC) is a dominant topology

For low-voltage at 1 kVLL / 1.5 kVdc

For medium-voltage up to 4.16 kVLL / 6 kVdc

Above series connection is needed (higher costs per MVA)

99.2% AC/DC efficiency (4.5 kV IGCTs, fcarr = 500 Hz,f_IGCT = 250 Hz)

Topologies:

NPC

Active NPC

Matrix-switch type NPC(SMC)

AC

AC

AC→

→

→

→=+

→=+


TopologiesCell-based Multi Level Converters

1) Supplied cells: 2) Unsupplied cells:

2-level halfbridge2-level fullbridge cell with 6p diode rectifier

3-level fullbridge cell with 12p diode rectifier

2-level fullbridge



Cell-based (with supply) Multi-level converter for higher voltages:a) 2 level cells b) 3 level cells

Transformer for potential separation needed

Up to 3 % transformer losses at 1 MVA (cost and volume optimized solution)



MMC (Modular Multilevel Converter) with unsupplied halfbbridge cells

Prefered for VSC based HVDC applications due to its very high efficiency

Offers high scalability and N+1 redundancy capabilities, like thyristor solutions

2 times the active switches and 5 times the DC capacitance of a 2-level converter

99.5% AC/DC efficiency (4.5 kV IGBT, fcell = 125 Hz)

References: [15] Modulares Stromrichterkonzept für Netzkupplungsanwendungen bei hohen Spannungen, Rainer Marquardt, Anton Lesnicar, Jürgen Hildinger, ETG 2002

→ACUd

4Ud4

Ud4

Ud4

Ud4

Ud4

Ud4

Ud4

→=+

→=+Ud

2

Ud2


- 6 inch IGCT- IGBT / BIGT

High power electronics applicationsTopologies

0 1MVA 10 MVA 100 MVA

33 kV

6.6 kV3.3 kV

1 kV

Cell-based Multi-level

Module Presspack

Switch-based (A)NPC(ML)

Low parts countBetter than 2L

Voltage scalabilityLow harmonics


#1 Efficiency: MV DrivesSupplied cell-based Multi Level Converter

MV drive: 5-level converter based on supplied 3-level (NPC) cells

36-pulse diode rectifier

Control unitAuxiliary power for control hardware

DC-link capacitors

Inverter unit

Transformer cable connection section for top and bottom entry

Motor cable connection section for topand bottom entry

Water cooling unit with stainless steel piping

Full bridge with two RCIGCT NPC phaselegs

© ABB Group June 5, 2015 | Slide 263BHT490557R0001 Rev. A

#1 Efficiency: TransportationPower Electronics Transformer

Power Electronics Transformer: 8+1 MMC cells for 15 kV, LLC resonant DC/DC, MF Xfrms at 1.8 kHz

References: [16] D. Dujic, Power Electronics Transformer for on-board applications – an overview,Industrial session on HV and high power, APEC 2013

15kV, 17 Hz

1.5 kVDC machine

PE transformer

10’000 km ofoperation


#2 RenewablesConverter for Offshore Windpower

Grid friendly integration of renewables

Very low harmonic limits

Grid codes - supportive behaviour during transients

Low-voltage ride-through (LVRT) capability up to 2..5 seconds

Protection of gearbox during grid-side transients and operation

PCS6000: IGCT NPC Converter for 5-7 MW offshore wind turbines© ABB Group June 5, 2015 | Slide 28

DolWin 1 (MMC transmission system based on Presspack IGBT technology)

Commissioning year: 2015

Power rating: 800 MW

No. of poles: 2

DC voltage: ±320 kV

Length of DC lines: sea 75 km

land 90 km

Reference: [17] B. Jacobson, P. Karlsson, G. Asplund, L. Harnefors, T. Jonsson: VSC-HVDC Transmission with Cascaded Two-Level Converters,Cigré session 2010, paper B4-110

#2 New RenewablesHVDC connection for Offshore Windpower


Grimsel LakeGrimsel 2 PSP

Oberaar Lake

Variable speed Pumped Hydro

#2 New Renewables Variable speed Pumped Hydro

The converter-fed synchronous machine (CFSM) is the future variable speed solution (replacing complex DFIM)

First retrofit reference rated at 100 MVA in commerical operation (since April 13)

Converter gridside transformer

3-levelGrid side inverters

3-levelMachine side

inverters

Voltagelimiting units

Converter machineside transformers

DC-linkfilter

Bypassdisconnector

SynchronousMotor / Generator

220 kV / 50 Hz

Grid side disconnector

Machine side disconnector

13.5 kV / 50 Hz

DC-linkcircuit

S = 100 MVAU = 13.5 kV

GeneratornN = 750 rpm

Pumpn = 450…765 rpm

Large Drive PCS 8000 3.3kVMedium Voltage Static Frequency Converters

S = 2x 50 MVAF1 = 50 Hz

F2 = 0...51Hz

A AA

A AAA AA

Converter Block

HP Filter

+

-

0

A AA

Converter Block

HP Filter

+

-

0

A AA

A AA

Transformers

Frequencyconverter

CoolingUnit

References: [18] 100 MW Full-Size Converter in the Grimsel 2 Pumped Storage Plant, Hans Schlunegger, Andreas Thöni, Hydro 2013 conference, Innsbruck


#2 New Renewables Variable speed Pumped Hydro

DC link filter Converter block

100 MW NPC-based power converter at Grimsel 2


#2 New Renewables Variable speed pump operation at Grimsel 2


Excellent LVRT capability

Supports grid stability during serious grid disturbances

Independent P/Q control

Voltage support du-ring pump or turbineoperation and instand-by

Primary control functions

LVRT: Low-voltage ride-through

#2 New Renewables Grid Code Compatibility of Full converter solution


Energy Efficiency and New RenewablesPower SemiconductorPower Electronics ApplicationsConclusions


High Power ElectronicsConclusions

Electrical power system

1. Optimum co-existance of the old AND new electrical energy systemneeded to mitigate the very costly CO2 impact

Power Semiconductors and Topologies

1. Silicon based IGBT, IGCT, BIGT and BGCT are todays choices

2. NPC and MMC as todays dominant topologies with Silicon

3. SiC based devices to grow with selected volume applications

Applications Drivers

1. Energy effciency is #1 to minimize our CO2 footprint (short-term)

2. New Renewables are #2 to miminize our CO2 footprint (long-term)

Strong driver for multiple high power electronics applications(Power Conversion, Storage, Transmission)© ABB Group

June 5, 2015 | Slide 36


Documents

Peter K. Steimer, Corporate Research Fellow , RD.S Power …web.geni-pco.com/icpe2015/download/Plenary_Talk_3_Dr... · 2015-06-18 · High Power Electronics Innovation Peter K. Steimer,