Pbyr2545ct Ctb Cte-05

PBYR2545CT/CTB/CTESchottky barrier rectifier diodesRev. 05 — 20 January 2003 Product data

1. Product profile

1.1 DescriptionDual, common cathode schottky rectifier diodes in two conventional leaded plasticpackages and one surface mount plastic package.

Product availability:

PBYR2545CT in SOT78 (TO-220AB)

PBYR2545CTB in SOT404 (D2-PAK)

PBYR2545CTE in SOT226 (I2-PAK).

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

[1] It is not possible to make connection to pin 2 of the SOT404 package.

Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance

Switched mode power supplies Low loss rectification

VRRM ≤ 45 V VF ≤ 0.62 V IF(AV) ≤ 30 A Tj(max) ≤ 150 °C

Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol

Pin Description Simplified outline Symbol

1 anode 1

SOT78 (TO-220AB) SOT404 (D2-PAK) SOT226 (I2-PAK)

2 cathode [1]

3 anode 2

mb cathode

MBK1061 2

mb

31 3

2

MBK116

mb

MBK1121 2 3

mb

MBL871

1 3

2

Philips Semiconductors PBYR2545CT/CTB/CTESchottky barrier rectifier diodes

3. Limiting values

[1] For output currents greater than 20A, the cathode connection should be made to the metal mounting tab.

Table 2: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse voltage - 45 V

VRWM working peak reverse voltage - 45 V

VR continuous reverse voltage Tmb ≤ 113 °C - 45 V

IF(AV) average rectified forward current both diodes conducting;square wave; δ = 0.5; Tmb ≤ 126 °C

[1] - 30 A

Tstg storage temperature − 65 +175 °C

Tj junction temperature - 150 °C

Per diode

IFRM repetitive peak forward current square wave; δ = 0.5; Tmb ≤ 126 °C - 30 A

IFSM non-repetitive peak forward current tp = 10 mstp = 8.3 ms;sinusoidal; Tj = 125 °C prior to surge;with reapplied VRRM(max)

- 180 A

- 200 A

IRRM repetitive peak reverse surge current pulse width and repetition ratelimited by Tj(max)

- 1 A

Product data Rev. 05 — 20 January 2003 2 of 13

9397 750 10926 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.


Square current waveform Sinusoidal current waveform

Fig 1. Maximum forward power dissipation (squarecurrent waveform) as a function of averageforward current (per diode).

Fig 2. Maximum forward power dissipation(sinusoidal current waveform) as a function ofaverage forward current (per diode).

0 10 20 30

T

P

tp t

T

tpδ =

15

10

5

0

δ = 1PF

(W)

IF(AV) (A)

003aaa210

Vo = 0.34 VRs = 0.014 Ω

127.5

135

142.5

150

Tmb (°C)(max)

0.2 0.1

0.5

12

8

4

00 5 10 15

IF(AV) (A)

PF(W)

a = 1.57

003aaa211

Vo = 0.34 VRs = 0.014 Ω

4 2.8

2.2 1.9

150

144

138

132

Tmb (°C)(max)

I F AV( ) I F RMS( ) δ×= aI F RMS( )I F AV( )-------------------=




4. Thermal characteristics

4.1 Transient thermal impedance

Table 3: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction to mounting base

per diode; Figure 3 - - 1.5 K/W

both diodes - - 1 K/W

Rth(j-a) thermal resistance from junction to ambient

SOT78 and SOT226 vertical in still air - 60 - K/W

SOT404 minimum footprint; mounted on anFR4 printed-circuit board

- 50 - K/W

Fig 3. Transient thermal impedance from junction to mounting base per diode as a function of pulse duration.

10

1

10-1

10-2

Zth(j-mb)(K/W)

1 1010-110-210-310-410-510-6tp (s)

003aaa215




5. Characteristics

Table 4: CharacteristicsTj = 25 °C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics per diode

VF forward voltage IF = 30 A; Tj = 125 °C; Figure 4 - 0.72 0.76 V

IF = 20 A; Tj = 125 °C - 0.58 0.62 V

IF = 30 A - 0.72 0.82 V

IR reverse current VR = VRRM; Figure 5 - 0.3 2 mA

VR = VRRM; Tj = 100 °C - 30 40 mA

Cd diode capacitance f = 1 MHz; VR = 5 V; Figure 6Tj = 25 °C to 125 °C

- 530 - pF




Fig 4. Forward current as a function of forwardvoltage; typical values.

Fig 5. Reverse current as a function of reversevoltage per diode; typical values.

f = 1MHz

Fig 6. Diode capacitance as a function of reverse voltage per diode; typical values.

max

typ

Tj = 25 °C

Tj = 125 °CIF(A)

50

40

30

20

10

00 0.4 0.8 1.2

VF (V)

003aaa212

VR (V)

0 5010 20 30 40

125 °C

100 °C

50 °C

25 °C

75 °C

Tj =

1

10

102

10-1

10-2

IR(mA)

003aaa213

1 10 102VR (V)

102

103

104

Cd(pF)

003aaa214




6. Package outline

Fig 7. SOT78 (TO-220AB).

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT78 SC-463-lead TO-220AB

D

D1

q

p

L

1 2 3

L1(1)

b1

e e

b

0 5 10 mm

scale

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

DIMENSIONS (mm are the original dimensions)

AE

A1

c

Note

1. Terminals in this zone are not tinned.

Q

L2

UNIT A1 b1 D1 e p

mm 2.54

q QA b Dc L2max.

3.0 3.83.6

15.013.5

3.302.79

3.02.7

2.62.2

0.70.4

15.815.2

0.90.7

1.31.0

4.54.1

1.391.27

6.45.9

10.39.7

L1(1)E L

00-09-0701-02-16

mountingbase




Fig 8. SOT404 (D2-PAK).

UNIT A



IEC JEDEC EIAJ

mm

A1 D1D

max.E e Lp HD Qc

2.54 2.602.20

15.8014.80

2.902.10

11 1.601.20

10.309.70

4.504.10

1.401.27

0.850.60

0.640.46

b


SOT404

0 2.5 5 mm

scale

Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads(one lead cropped) SOT404

e e

E

b

D1

HD

D

Q

Lp

c

A1

A

1 3

2

mountingbase

99-06-2501-02-12




Fig 9. SOT226 (I2-PAK).



IEC JEDEC EIAJ

SOT226low-profile

3-lead TO-220AB

D

D1

L

1 2 3

L2L1

mountingbase

b1

e e

Q

b

0 5 10 mm

scale

Plastic single-ended package; low-profile 3 lead TO-220AB SOT226


A

E A1

c

Note

1. Terminals in this zone are not tinned.

UNIT A1 b1 D1 e Q

mm 2.54

L1

2.62.2

3.302.79

15.013.5

10.39.7

1.51.1

9.658.65

0.70.4

1.31.0

0.90.7

1.401.27

4.54.1

A b Dc

3.0

L2(1)

maxE L

99-05-2799-09-13




7. Soldering

Dimensions in mm.

Fig 10. Reflow soldering footprint for SOT404.

handbook, full pagewidth

MSD057

solder lands

solder resist

occupied area

solder paste

10.50

7.407.50

1.50

1.70

10.60

1.201.301.55

5.08

10.85

0.30

2.15

8.35

2.25

4.60

0.203.00

4.85

7.95

8.15

8.075

8.275

5.40

1.50




8. Revision history

Table 5: Revision history

Rev Date CPCN Description

05 20030120 - Product data (9397 750 10926) supersedes Product specificationPBYR2545CT_CTB_SERIES revision 04 of 1998 Oct 01





Contact informationFor additional information, please visit http://www.semiconductors.philips.com .For sales office addresses, send e-mail to: [email protected] . Fax: +31 40 27 24825

9. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet atURL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

10. Definitions

Short-form specification — The data in a short-form specification isextracted from a full data sheet with the same type number and title. Fordetailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance withthe Absolute Maximum Rating System (IEC 60134). Stress above one ormore of the limiting values may cause permanent damage to the device.These are stress ratings only and operation of the device at these or at anyother conditions above those given in the Characteristics sections of thespecification is not implied. Exposure to limiting values for extended periodsmay affect device reliability.

Application information — Applications that are described herein for anyof these products are for illustrative purposes only. Philips Semiconductorsmake no representation or warranty that such applications will be suitable forthe specified use without further testing or modification.

11. Disclaimers

Life support — These products are not designed for use in life supportappliances, devices, or systems where malfunction of these products canreasonably be expected to result in personal injury. Philips Semiconductorscustomers using or selling these products for use in such applications do soat their own risk and agree to fully indemnify Philips Semiconductors for anydamages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right tomake changes in the products - including circuits, standard cells, and/orsoftware - described or contained herein in order to improve design and/orperformance. When the product is in full production (status ‘Production’),relevant changes will be communicated via a Customer Product/ProcessChange Notification (CPCN). Philips Semiconductors assumes noresponsibility or liability for the use of any of these products, conveys nolicence or title under any patent, copyright, or mask work right to theseproducts, and makes no representations or warranties that these products arefree from patent, copyright, or mask work right infringement, unless otherwisespecified.

Level Data sheet status [1] Product status [2][3] Definition

I Objective data Development This data sheet contains data from the objective specification for product development. PhilipsSemiconductors reserves the right to change the specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be publishedat a later date. Philips Semiconductors reserves the right to change the specification without notice, inorder to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves theright to make changes at any time in order to improve the design, manufacturing and supply. Relevantchanges will be communicated via a Customer Product/Process Change Notification (CPCN).





© Koninklijke Philips Electronics N.V. 2003.Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the priorwritten consent of the copyright owner.

The information presented in this document does not form part of any quotation orcontract, is believed to be accurate and reliable and may be changed without notice. Noliability will be accepted by the publisher for any consequence of its use. Publicationthereof does not convey nor imply any license under patent- or other industrial orintellectual property rights.

Date of release: 20 January 2003 Document order number: 9397 750 10926

Contents


1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 12 Pinning information . . . . . . . . . . . . . . . . . . . . . . 13 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 24 Thermal characteristics. . . . . . . . . . . . . . . . . . . 44.1 Transient thermal impedance . . . . . . . . . . . . . . 45 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 56 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 77 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 119 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 1210 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1211 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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Pbyr2545ct Ctb Cte-05