50
Four Elements of Materials Science OVERVIEW OF THE COURSE Processing Structure Properties Chemical Synthesis Melting Casting Annealing Sintering Diffusion .... Atomic/Molecular St. Bond structure Crystal Structure Defect Structures Microstructure Energy Band Structure Performance Mechanical Electrical Optical Thermal Magnetic Cost Reliability Efficiency Service Life ... 1 2 3 4 5 7 6 /

OVERVIEW OF THE COURSE - mse125.cankaya.edu.tr

  • Upload
    others

  • View
    5

  • Download
    0

Embed Size (px)

Citation preview

Chapter 5 -

Four Elements of Materials Science

OVERVIEW OF THE COURSE

Processing Structure Properties

Chemical Synthesis Melting Casting Annealing Sintering Diffusion ....

Atomic/Molecular St. Bond structure Crystal Structure Defect Structures Microstructure Energy Band Structure

Performance

Mechanical Electrical Optical Thermal Magnetic

Cost Reliability Efficiency Service Life ...

1 2

3 4

5

7

6

/

Chapter 5 -

Rate of Processes

Chemical Kinetics Transport Phenomenon

Matter Energy

Mass Transport Heat Transfer

DIFFUSSION

Chapter 5 - 3

ISSUES TO ADDRESS...

• How does diffusion occur?

• Why is it an important part of processing?

• How can the rate of diffusion be predicted for some simple cases?

• How does diffusion depend on structure and temperature?

Chapter 5: Diffusion

Chapter 5 -

Diffusion

Diffusion - Mass transport by atomic motion Mechanisms •  Gases & Liquids – random (Brownian) motion •  Solids – vacancy diffusion or interstitial diffusion

Chapter 5 -

Why Study Diffusion ? •  Diffusion plays a crucial role in…

–  Alloying metals => bronze, silver, gold –  Strengthening and heat treatment processes

•  Hardening the surfaces of steel –  High temperature mechanical behavior –  Phase transformations

•  Mass transport during FCC to BCC –  Environmental degradation

•  Corrosion, etc.

Chapter 5 - 2

• Glass tube filled with water. • At time t = 0, add some drops of ink to one end of the tube. • Measure the diffusion distance, x, over some time. • Compare the results with theory.

DIFFUSION DEMO

Chapter 5 -

How do atoms move in Solids ? Why do atoms move in Solids ?

•  Diffusion, simply, is atoms moving from one lattice site to another in a stepwise manner –  Transport of material by moving atoms

•  Two conditions are to be met: –  An empty adjacent site –  Enough energy to break bonds and cause lattice

distortions during displacement •  What is the energy source ?

–  HEAT ! •  What else ?

–  Concentration gradient !

Chapter 5 - 8

• Interdiffusion: In an alloy, atoms tend to migrate from regions of high conc. to regions of low conc.

Initially

Adapted from Figs. 5.1 and 5.2, Callister & Rethwisch 8e.

Diffusion

After some time

Chapter 5 - 9

• Self-diffusion: In an elemental solid, atoms also migrate.

Label some atoms

Diffusion

A

B

C

D

After some time

A B

C

D

Chapter 5 -

More examples in 3-D !

Chapter 5 -

Diffusion Mechanisms

Energy is needed to generate a vacancy, break bonds, cause distortions. Provided by HEAT , kT ! Atom moves in the opposite direction of the vacancy !

Chapter 5 - 5

Substitutional Diffusion: • applies to substitutional impurities • atoms exchange with vacancies • rate depends on: --number of vacancies --activation energy to exchange.

Diffusion Mechanisms

Chapter 5 - 13

Diffusion Mechanisms

•  Interstitial diffusion – smaller atoms can diffuse between atoms.

Much faster than vacancy diffusion, why ? Smaller atoms like B, C, H, O. Weaker interaction with the larger atoms. More vacant sites, no need to create a vacancy !

Adapted from Fig. 5.3(b), Callister & Rethwisch 8e.

Chapter 5 - 14

Adapted from chapter-opening photograph, Chapter 5, Callister & Rethwisch 8e. (Courtesy of Surface Division, Midland-Ross.)

• Case Hardening: -- Diffuse carbon atoms into the host iron atoms at the surface. -- Example of interstitial diffusion is a case hardened gear.

• Result: The presence of C atoms makes iron (steel) harder.

Processing Using Diffusion

Chapter 5 - 15

• Doping silicon with phosphorus for n-type semiconductors: • Process:

3. Result: Doped semiconductor regions.

silicon

Processing Using Diffusion

magnified image of a computer chip

0.5 mm

light regions: Si atoms

light regions: Al atoms

2. Heat it.

1. Deposit P rich layers on surface.

silicon

Adapted from Figure 18.27, Callister & Rethwisch 8e.

Chapter 5 - 16

Diffusion

•  How do we quantify the amount or rate of diffusion?

( )( ) smkgor

scmmol

timearea surfacediffusing mass) (or molesFlux 22=≡≡J

Diffusion is a time-dependent process: the quantity of matter that is transported within another is a function of time.

Often it is necessary to know how fast diffusion occurs, or the rate of mass transfer .

Chapter 5 - 17

Diffusion •  How do we quantify the amount or rate of diffusion?

( )( ) smkgor

scmmol

timearea surfacediffusing mass) (or molesFlux 22=≡≡J

J ∝ slope

dtdM

Al

AtMJ ==

M = mass

diffused time

•  Measured empirically –  Make thin film (membrane) of known surface area –  Impose concentration gradient –  Measure how fast atoms or molecules diffuse through the

membrane

Chapter 5 -

• Diffusion Flux:

10

• Directional Quantity (anisotropy ?)

• Flux can be measured for: --vacancies --host (A) atoms --impurity (B) atoms

MODELING DIFFUSION: FLUX

Material

Diffusion is a time-dependent process !

RATE OF MATERIAL TRANSPORT

Chapter 5 -

• When concentration C is plotted vs position (or distance) plotted with in the solid: Concentration Profile, the slope will give us concentration gradient. It is sometimes convenient to express conc. In terms of mass of diffusing species per unit volume of a solid. C(x): [kg/m3]

11

• Fick's First Law:

Concentration of Cu [kg/m3]

Concentration of Ni [kg/m3]

Position, x

Cu flux Ni flux

• The steeper the concentration profile, the greater the flux! Concentration gradient is the DRIVING FORCE !

Adapted from Fig. 5.2(c), Callister 6e.

CONCENTRATION PROFILES & FLUX

Chapter 5 -

Concentration Gradient

Chapter 5 -

• Steady State: the concentration profile doesn't change with time.

12

• Apply Fick's First Law:

• Result: the slope, dC/dx, must be constant (i.e., slope doesn't vary with position)!

Jx = −D

dCdx

dCdx⎛

⎝ ⎜

⎠ ⎟ left

=dCdx

⎝ ⎜

⎠ ⎟ right

• If Jx)left = Jx)right , then

STEADY STATE DIFFUSION

Why is the minus sign ?

Chapter 5 -

• Steel plate at 700º C

13

• Q: How much carbon transfers from the rich to the deficient side?

Adapted from Fig. 5.4, Callister 6e.

EX: STEADY STATE DIFFUSION

Chapter 5 - 23

Example: Chemical Protective Clothing (CPC)

•  Methylene chloride is a common ingredient of paint removers. Besides being an irritant, it also may be absorbed through skin. When using this paint remover, protective gloves should be worn.

•  If butyl rubber gloves (0.04 cm thick) are used, what is the diffusive flux of methylene chloride through the glove?

•  Data: –  diffusion coefficient in butyl rubber:

D = 110 x10-8 cm2/s –  surface concentrations:

C2 = 0.02 g/cm3

C1 = 0.44 g/cm3

Chapter 5 - 24

scmg 10 x 16.1

cm) 04.0()g/cm 44.0g/cm 02.0(/s)cm 10 x 110( 2

5-33

28- =−

−=J

Example (cont).

12

12- xxCCD

dxdCDJ

−−≅=

Dtb 6

2=

glove C1

C2

skin paint remover

x1 x2

•  Solution – assuming linear conc. gradient

D = 110 x 10-8 cm2/s

C2 = 0.02 g/cm3

C1 = 0.44 g/cm3

x2 – x1 = 0.04 cm

Data:

Chapter 5 -

Effect of Temperature

D = Do exp ⎛ ⎝ ⎜

⎞ ⎠ ⎟

- Qd R T

= pre-exponential [m2/s] = diffusion coefficient [m2/s]

= activation energy [J/mol or eV/atom] = gas constant [8.314 J/mol-K] = absolute temperature [K]

D Do

Qd

R T

interstitial

Chapter 5 - 26

Diffusion and Temperature

• Diffusion coefficient increases with increasing T.

D = Do exp ⎛ ⎝ ⎜

⎞ ⎠ ⎟

- Qd R T

= pre-exponential [m2/s] = diffusion coefficient [m2/s]

= activation energy [J/mol or eV/atom] = gas constant [8.314 J/mol-K] = absolute temperature [K]

D Do

Qd

R T

Chapter 5 - 27

Diffusion and Temperature

Adapted from Fig. 5.7, Callister & Rethwisch 8e. (Date for Fig. 5.7 taken from E.A. Brandes and G.B. Brook (Ed.) Smithells Metals Reference Book, 7th ed., Butterworth-Heinemann, Oxford, 1992.)

D has exponential dependence on T

D interstitial >> D substitutional C in α-Fe C in γ-Fe

Al in Al Fe in α-Fe Fe in γ-Fe

1000 K/T

D (m2/s)

0.5 1.0 1.5 10-20

10-14

10-8 T(°C) 15

00

1000

600

300

Chapter 5 - 28

Diffusion and Temperature

Adapted from Fig. 5.7, Callister & Rethwisch 8e. (Date for Fig. 5.7 taken from E.A. Brandes and G.B. Brook (Ed.) Smithells Metals Reference Book, 7th ed., Butterworth-Heinemann, Oxford, 1992.)

D has exponential dependence on T

D interstitial >> D substitutional C in α-Fe C in γ-Fe

Al in Al Fe in α-Fe Fe in γ-Fe

1000 K/T

D (m2/s)

0.5 1.0 1.5 10-20

10-14

10-8 T(°C) 15

00

1000

600

300

Chapter 5 - 8

• APF for a body-centered cubic structure = 0.68

ATOMIC PACKING FACTOR: BCC

a

a 2

a 3

a R

Chapter 5 -

Unit cell contains: 6 x 1/2 + 8 x 1/8 = 4 atoms/unit cell

a

10

• APF for a body-centered cubic structure = 0.74

ATOMIC PACKING FACTOR: FCC

Chapter 5 -

Fast Tracks for diffusion ! eg. self-diffusion of Ag : - Areas where lattice is pre-strained can allow for faster diffusion of atoms - Less energy is needed to distort an already strained lattice !

Chapter 5 - 32

Example: At 300ºC the diffusion coefficient and activation energy for Cu in Si are

D(300ºC) = 7.8 x 10-11 m2/s Qd = 41.5 kJ/mol

What is the diffusion coefficient at 350ºC?

!!"

#$$%

&'=!!

"

#$$%

&'=

101

202

1lnln and 1lnlnTR

QDDTR

QDD dd

⎟⎟⎠

⎞⎜⎜⎝

⎛−−==−∴

121

212

11lnlnln TTR

QDDDD d

transform data

D

Temp = T

ln D

1/T

Chapter 5 - 33

Example (cont.)

⎥⎦

⎤⎢⎣

⎡⎟⎠

⎞⎜⎝

⎛−

−= −

K 5731

K 6231

K-J/mol 314.8J/mol 500,41exp /s)m 10 x 8.7( 211

2D

⎥⎦

⎤⎢⎣

⎡⎟⎟⎠

⎞⎜⎜⎝

⎛−−=

1212

11exp TTR

QDD d

T1 = 273 + 300 = 573 K T2 = 273 + 350 = 623 K

D2 = 15.7 x 10-11 m2/s

Chapter 5 -

Fick’s Second Law ; Non-steady state Diffusion

•  In most practical cases, J (flux) and dC/dx (concentration gradient) change with time (t). –  Net accumulation or depletion of species diffusing

•  How do we express a time dependent concentration?

Concentration at a point x Changing with time

? Flux, J, changes at any point x !

Chapter 5 - 35

Non-steady State Diffusion

•  The concentration of diffusing species is a function of both time and position C = C(x,t)

•  In this case Fick’s Second Law is used

2

2

xCD

tC

∂=

∂Fick’s Second Law

Chapter 5 -

How do we solve this partial differential equation ?

•  Use proper boundary conditions: –  t=0, C = C0, at 0 ≤ x ≤ ∞ –  t>0, C = Cs, at x = 0 C = C0, at x = ∞

Chapter 5 - 37

Non-steady State Diffusion

Adapted from Fig. 5.5, Callister & Rethwisch 8e.

B.C. at t = 0, C = Co for 0 ≤ x ≤ ∞

at t > 0, C = CS for x = 0 (constant surface conc.)

C = Co for x = ∞

• Copper diffuses into a bar of aluminum.

pre-existing conc., Co of copper atoms Surface conc., C of Cu atoms bar s

C s

Chapter 5 - 38

Solution:

C(x,t) = Conc. at point x at time t

erf (z) = error function

erf(z) values are given in

Table 5.1

CS

Co

C(x,t)

( )⎟⎠

⎞⎜⎝

⎛−=

Dtx

CCCt,xC

os

o

2 erf1

dye yz 2

0

2 −∫π=

Adapted from Fig. 5.5, Callister & Rethwisch 8e.

Chapter 5 - 39

Non-steady State Diffusion ⎟⎠

⎞⎜⎝

⎛−=

Dtx

CCCtxC

os

o

2erf1),(

Chapter 5 - 40

Non-steady State Diffusion •  Sample Problem: An FCC iron-carbon alloy initially

containing 0.20 wt% C is carburized at an elevated temperature and in an atmosphere that gives a surface carbon concentration constant at 1.0 wt%. If after 49.5 h the concentration of carbon is 0.35 wt% at a position 4.0 mm below the surface, determine the temperature at which the treatment was carried out.

•  Solution: use Eqn. 5.5 ⎟⎠

⎞⎜⎝

⎛−=

Dtx

CCCtxC

os

o

2erf1),(

Chapter 5 - 41

Non-steady State Diffusion ⎟⎠

⎞⎜⎝

⎛−=

Dtx

CCCtxC

os

o

2erf1),(

Chapter 5 - 42

Chapter 5 - 43

Solution (cont.):

–  t = 49.5 h x = 4 x 10-3 m –  Cx = 0.35 wt% Cs = 1.0 wt% –  Co = 0.20 wt%

⎟⎠

⎞⎜⎝

⎛−=

Dtx

CCC)t,x(C

os

o

2erf1

)(erf12

erf120.00.120.035.0),( z

Dtx

CCCtxC

os

o −=⎟⎠

⎞⎜⎝

⎛−=

−=

∴ erf(z) = 0.8125

Chapter 5 - 44

Solution (cont.): We must now determine from Table 5.1 the value of z for which the error function is 0.8125. An interpolation is necessary as follows

z erf(z) 0.90 0.7970 z 0.8125 0.95 0.8209

7970.08209.07970.08125.0

90.095.090.0

−=

−z

z = 0.93

Now solve for D

Dtxz

2=

tzxD 2

2

4=

/sm 10 x 6.2s 3600

h 1h) 5.49()93.0()4(

m)10 x 4(4

2112

23

2

2−

−==

⎟⎟

⎜⎜

⎛=∴

tzxD

Chapter 5 - 45

•  To solve for the temperature at which D has the above value, we use a rearranged form of Equation (5.9a);

)lnln( DDRQTo

d−

=

from Table 5.2, for diffusion of C in FCC Fe

Do = 2.3 x 10-5 m2/s Qd = 148,000 J/mol

/s)m 10x6.2 ln/sm 10x3.2 K)(ln-J/mol 314.8(J/mol 000,148

21125 −− −=T∴

Solution (cont.):

T = 1300 K = 1027ºC

Chapter 5 - 17

• The experiment: we recorded combinations of t and x that kept C constant.

• Diffusion depth given by:

C(xi,ti)−CoCs −Co

= 1− erf xi2 Dti

⎝ ⎜ ⎜

⎠ ⎟ ⎟ = (constant here)

DIFFUSION DEMO: ANALYSIS

Chapter 5 -

• Copper diffuses into a bar of aluminum. • 10 hours at 600C gives desired C(x). • How many hours would it take to get the same C(x) if we processed at 500C?

16

• Result: Dt should be held constant.

• Answer: Note: values of D are provided here.

Key point 1: C(x,t500C) = C(x,t600C). Key point 2: Both cases have the same Co and Cs.

Example 5.3

Chapter 5 -

Size Impact on Diffusion

Smaller atoms diffuse faster

Chapter 5 -

Important

•  Temperature - diffusion rate increases with increasing temperature (WHY ?)

•  Diffusion mechanism – interstitials diffuse faster (WHY ?)

•  Diffusing and host species - Do, Qd is different for every solute - solvent pair

•  Microstructure - grain boundaries and dislocation cores provide faster pathways for diffusing species, hence diffusion is faster in polycrystalline vs. single crystal materials. (WHY ?)

Chapter 5 - 50

Diffusion FASTER for... • open crystal structures • materials w/secondary bonding • smaller diffusing atoms • lower density materials

Diffusion SLOWER for... • close-packed structures • materials w/covalent bonding • larger diffusing atoms • higher density materials

Summary