Opto-semiconductorsCondensed Catalog

HAMAMATSU PHOTONICS K.K.

HAMAMATSU PHOTONICS has been at the cutting edge of photonics technology for over 55 years. In that time, HAMAMATSU has developed and produced a wide range of opto-semiconductors such as photodiodes, photo ICs, image sensors, and LEDs, as well as mini-spectrometers and many other products using opto-semiconductors.Our lineup of opto-semiconductors covers a broad spectrum from the infrared through the visible and ultraviolet regions, extending to X-rays and even high energy particles. These are widely used in many fields ranging from scientific measurements, medical diagnosis, communications, and consumer electronics as well as in-vehicle applications.In the days ahead, besides improving our semiconductor process and mounting/packaging technologies to make them more sophisticated, we will fully utilize MOEMS (micro-opto-electro-mechanical systems) technology that merges photonics technology with MEMS technology to develop opto-semiconductors with even higher sensitivity, speeds, and functions.

Our unique photonics technology delivers highly sophisticated opto-semiconductors withhigh-sensitivity and high-speed response.

Koei YamamotoRepresentative Director and Senior Managing DirectorDirector of Solid State DivisionHamamatsu Photonics K. K.

C o n t e n t s

Applications of HAMAMATSU opto-semiconductors........................ 3 - 5Opto-semiconductor selection guide .......................................... 6 - 8Manufacturing process of opto-semiconductors ...................... 9 - 12Map / Annual sales / Organization chart ................................ 35 - 36

1

Highly sophisticated opto-semiconductors with high-sensitivity and high-speed response

Semiconductorprocess technologies

Mounting/packagetechnologies

HAMAMATSU "MOEMS" (micro-opto-electro-mechanical systems) technologies

MEMStechnologies

Our high sensitivity/high-speed device technology and CMOS circuit technology produce highly sophisticateddevices.

· Silicon process· Compound crystal growth

A variety of package styles are available including high-reliability packages, surface-mount packages, and small, thin packages.

· Metal package· Ceramic package· Plastic package· COB (chip on board), etc.

Fine processing is used to enhance the functions of optical devices.

· Etching· Nanoimprint· Resist spray coating· Bonding· Through-hole electrode

HAMAMATSU opto-semiconductors

LED.............................................. 29Optical communication devices....... 30Mini-spectrometers................. 31 - 32Opto-semiconductor modules.. 33 - 34

Flat panel sensors ......................... 23PSD (position sensitive detectors)... 24Infrared detectors .................. 25 - 26Visible light sensors ....................... 27Color sensors ................................ 28

Si photodiodes ....................... 13 - 14Si APD................................... 15 - 16MPPC .................................... 17 - 18Photo IC ................................ 19 - 20Image sensors ....................... 21 - 22

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©Frank Boston-Fotolia.com

RGB color sensors

Our automotive devices are widely used in vehicles. (In-vehicle LAN, ambient light level detection, day/night detection, windshield rain sensors, laser radars, multi-function jog dials, pedestrian protection systems, glare-proof mirrors, etc.)

Automotive applicationsColor sensors are used for detecting ambient light color.

LCD color adjustment

Our Si photodiodes are widely used as detectors in X-ray baggage inspection systems.

X-ray non-destructive inspection

Si photodiode arrays

Front-illuminated CCD area image sensors are used in panoramic/cephalometric imaging equipment for dental diagnosis.

Dental X-ray imaging

Front-illuminatedCCD area image sensors

Applications of HAMAMATSU opto-semiconductorsHAMAMATSU opto-semiconductors have been used in wide-ranging fields including communications, industry and general electronics as well as medical and scientific applications.

Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)]

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©Nmedia-Fotolia.com

, ,

Si APD

Si APD and PIN photo-diodes are used in surveying instruments for distance measurement.

RangefindersWe provide light transmit-ter and receiver devices for optical fiber communi-cations and FSO (free space optics).

Optical communications

Optical communication related devices

The MPPC is used in diverse applications for detecting extremely weak light at the photon-counting level.

Photon counting

Automotive devices

The world’s highest sensitivity CCDs manufactured by HAMAMATSU are installed in the Suprime Cam/Subaru Prime Focus Camera of the Subaru Telescope at the summit of Mauna Kea, Hawaii.

Astronomical observation

CCD area image sensorFlat panel sensor

Subaru Telescope [by courtesy of NAOJ Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)](National Astronomical Observatory of Japan)]Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)]

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©Zoe-Fotolia.com

MPPC

Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)]

The European Organization for Nuclear Research (CERN) in Switzer land is conducting a project involving the Large Hadron Collider (LHC). The Si strip detec-tor by HAMAMATSU is being used as the particle track detector in the collider, and is detecting particle tracks with a preci-sion on the order of several tens of μm.

High energy experiments

Si APDSi strip detector

Infrared LED and Si PIN photodiode arrays are used to configure encoders built into robots for position control.

Industrial robots

Si PIN photodiode arraysInfrared LED

Back-thinned TDI-CCD image sensors are used for wafer defect inspections.

Semiconductor manufacturing equipment

Back-thinned TDI-CCD image sensors

CMS project(by courtesy of CERN)

Applications of HAMAMATSU opto-semiconductors

5

Lightemitter

Opto-semiconductor selection guide

Photosensor

6

Visible

IR

Segmented type

X-ray

Near IR

IR

1D

Non-segmented type

Point sensor

Image sensor

Position sensor

High energy particle

Visible

2D

UV

7

Red LED (light emitting diode) Optical switches, optical fiber communications

Infrared LED (light emitting diode) Optical switches, light sources for measurement devices, optical communication, automatic control, rotary encoding

Si photodiode with compensation filter Exposure measurement, auto-strobes, illuminometry, copiers, color sensors

Diffusion type GaAsP photodiode Exposure measurement, auto-strobes, illuminometry, flame eyes (monitors)

Illuminance sensor

Color sensor Display color adjustment, color detection

Energy-saving sensors for TV, etc., light dimmers for liquid crystal panels,backlight dimmers for cell phones, optical power measurements

Si photodiode

Si APD (avalanche photodiode) Optical communication devices, information equipment, automatic control systems, general electronics, car electronics, photometric equipment, medical equipment, high energy physics

Photo IC Optical switches, office automation equipment, rotary encoders, optical fiber communications

InGaAs PIN photodiode Optical communication, IR laser monitoring, radiation thermometry, industrial measurement

PbS/PbSe photoconductive detector Radiation thermometry, flame eyes (monitoring), moisture analysis, gas analysis, spectroscopy

IR laser detection, spectroscopy, radiation thermometry, gas analysis

Thermal imaging, radiation thermometry, FTIR, gas analysis, CO2 laser detection

Photon drag detector CO2 laser detection

Linear image sensor Multichannel spectroscopy, spectrum analysis, optical measurement

Photodiode array Multichannel spectroscopy, color analysis, spectrum analysis, position detection

Multi-element photodiode Optical disk pickup, position detection

Si photodiode for X-ray X-ray baggage inspection, non-destructive inspection, medical use

PSD (position sensitive detector) Rangefinding, displacement sensing, laser optics, automatic control systems, high energy physics

X-ray image sensor Dental X-ray imaging, non-destructive inspection

Area image sensor Fluorescence spectroscopy, Raman spectroscopy, scientific measurement, X-ray imaging

Flat panel sensor Radiography, X-ray diffractometers, non-destructive inspection

[Product name] [Applications]Si detector High energy physics, nuclear medicine, industrial measurement

[Product name] [Applications]

Optical communication devices, information equipment, automatic control systems, general electronics,car electronics, photometric equipment, medical equipment, high energy physics

InSb photoconductive detector,InSb/InAs/InAsSb photovoltaic detector

MCT (HgCdTe) photoconductive/photovoltaic detector

Si photodiode for UV light

Schottky type GaAsP photodiode

Schottky type GaP photodiode

Pollution analysis, spectroscopy, medical use, UV detection, colorimetry

Pollution analysis, spectroscopy, colorimetry, UV detection

UV detection

IR-enhanced Si photodiode/Si APD YAG laser monitor, NIR detection

8

Moduleproduct

Mini-spectrometer,photosensor amplifier,APD module, etc.

Selection guide by wavelength

Wavelength

Phot

osen

sor

Ligh

t em

itter

0.2 0.4 0.6 0.8 1 2 4 6 8 10 20 (μm)

Si

GaP

InGaAs

GaAs LED

GaAlAs LED

PbS

PbSe

InAs

InSb

MCT

InAsSb

GaAsP

Spectralrange

UV Visible Near IR Middle IR

Thin films are formed on wafers by oxidation or CVD process.

Oxidation

SiO2

Si

Device patterns are formed by photolithographic technique.

Photolithography

SiResist

SiO2

Photomask

Selective etching is performed on the thin film on wafers.

Etching

Si

Resist

SiO2

[Typical process of Si photodiode fabrication]

Design for new products Design for custom products

Thin-film crystal growth under ultra-high vacuum in MBE equipment Thin-film crystal growth with MOCVD equipment

[Typical compound semiconductor fabrication process]

HAMAMATSU has been manufacturing a wide range of opto-semiconductors using our unique wafer process technologies.

Fabricates high-speed photodiodes by integrating a PIN photodiode and high-speed signal processing circuits onto a single chip.

PIN bipolar process

We develop CMOS sensors for various application fields such as chemical analysis, medical diagnosis, in-vehicle devices, information processing, and general electronics using our unique analog CMOS process as a core technology.

CMOS process

Back-thinned CCD area image sensors have a very thin photosensitive layer for high sensitivity yet low dark current.

Back-thinned CCD process

Utilizing compound semiconductor process technologies that include MBE, MOCVD, and dry etching techniques optimized for precision processing, we have been developing high-performance devices for optical communications, chemical analysis, and measurement.

Compound process

Manufacturing technologies

Product examples produced using our compound semiconductor process

InGaAs APD InGaAs linear image sensors

Semiconductor process technologies

Si wafer (before process)

Wafer process

Design Epitaxial growth process

Electrical and opticalcharacteristics

Active area Number of elements Package Reliability

[Example of custom orders]

Product examples produced using our CMOS process

Digital color sensors CMOS image sensors

Manufacturing process of opto-semiconductors

9

Doping impurities are injected into wafers.

Ion implantation

Si Diffusion layer

SiO2

Ion

Metal pattern is formed.

Metallization

Metal

SiDiffusion layer

SiO2

Devices on the wafer are inspected electrically and optically.

Wafer inspection

Metal

SiDiffusion layer

SiO2

Main factory (Ichino)

To assembly process

Devices can be fabricated in a variety of different shapes by anisotropic etching. Etching

This is a new technology for use in nanostructure formation and nanolithography. Nanoimprint

Resist spray coating is used to form a uniform resist layer essential for etching cavities and grooves.

Resist spray coating

Our bonding technology supports narrow-pitch bump bonding and direct wafer bonding that does not use adhesives.

Bonding

This is an electrical connection from device electrodes formed on a silicon surface to the reverse side, by way of a hole through the silicon substrate.

Through-hole electrode

MEMS (micro-electro-mechanical systems) technology is the focus of much attention since it revolutionizes the functions of opto-semiconductors. HAMAMATSU is developing highly functional opto-semiconductors using a wide range of MEMS technologies.

V groove formed by anisotropic etching Nanoimprint Resist spray coating 20 μm pitch indium bump electrodes

MEMS technologies

10

Ceramic package

Standard type Surface mount type

Mounting/packaging technologies

Metal package

TO-can

Mitsue factory (Assembly factory)

Rectangular metal

Gold bumps are formed on wafers.

Bump forming

Wafers are cut by a spinning blade.

Blade dicing

A laser cuts a wafer by irradiating the interior ofthe wafer.

Stealth dicing

Dicing

Metal package

Ceramic package

Plastic package

Chip size package

Assembly process [Typical process]

Chips are bonded to metal bases.

Die bonding

Chips are bonded to ceramic bases.

Die bonding

Chips are bonded to lead frames.

Die bonding

Dicing

Blade dicing

Stealth dicing

or

11

Manufacturing technologies

HAMAMATSU offers a variety of package types to meet diverse market needs. For example, metal packages are widely used in applications requiring high reliability. Ceramic packages are used in general applications. Plastic packages are suitable for high-volume applications where lower cost is essential. Special packages include rectangular metal packages designed for use with thermoelectrically-cooled CCD area image sensors. Many different types of surface mount packages are also available. COB (chip on board) devices and thin plastic package devices are ideal especially for applications where small, thin devices are needed. What's more, photodiode/scintillator combination devices are available that detect X-rays or radiation by converting them into visible light.

Chip size package

Flip chip bonding

COB (chip on board)Standard type Thin type

With scintillator Long and narrow type

Cross section

Board (PWB)

Si chip

Underfill

Bump

Flip chip bonding is a mounting technique used to directly bond semiconductor chips via bumps onto the substrate, etc. This offers considerable space saving and upgrades performance.

Plastic package

Chips are connected to metal bases using gold wires.

Wire-bonding

Chips are connected to ceramic bases using gold wires.

Wire-bonding

Chips are connected to lead frames using gold wires.

Wire-bonding

Chips with bumps are bonded to substrates by being flipped (inverted).

Flip chip bonding

Metal caps are welded to metal bases.

Cap sealing

Resin is injected into ceramic bases.

Resin encapsulation

Resin is molded along lead frames and chips.

Resin molding and trimming

The space between the substrate and chip is filled in with resin.

Underfill filling

Test

12

Electrical & optical characteristicsand appearance are tested.

Metal package test equipment

Plastic package test equipment

[Si photodiodes]Product lineup for wide-ranging applicationsSi photodiodes are used in various applications covering optical fi ber communications, copiers, analytical instruments and baggage inspection, and are available in various packages including metal, ceramic and plastic packages, as well as surface mount packages.

1 Si photodiode

4 Si photodiode with preamp

2 Si PIN photodiode

5 TE-cooled typeSi photodiode

3 Multi-element type Si photodiode

6 Si photodiode for X-ray

13

Spectral response (typical example)

S i P H O T O D I O D E S

S1226/S1336-8BQ, S1227/S1337-1010BR S3590-19, S3759, S9219

2000

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

1200300 400 500 600 700

Wavelength (nm)

Phot

osen

sitiv

ity (

A/W

)

800 900 1000 1100

(Typ. Ta=25 ºC)

S1336-8BQ(For UV to NIR)

S1337-1010BR(For UV to NIR)

S1227-1010BR(IR sensitivity suppressed)

S1226-8BQ(IR sensitivity suppressed)

QE=100%

2000

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

1200300 400 500 600 700

Wavelength (nm)

Phot

osen

sitiv

ity (

A/W

)

800 900 1000 1100

(Typ. Ta=25 ºC)

S3759 (for YAG laser)

S3590-19(high violet sensitivity)

QE=100%

S9219(visible-sensitive compensated)

KSPDB0300EB KSPDB0301EB

Features Major applications

Excellent linearity with respect to incident light

Low noise

Wide spectral response range

Mechanically rugged

Compact and lightweight

Long life

Analytical instrument

General photometry

Baggage inspection

Optical fi ber communications

Product name Product examples

For UV to near IR range For visible to near IR range For visible range RGB color sensor For VUV (vacuum ultraviolet) detection For monochromatic light detection For electron beam detection

Cutoff frequency: 1 GHz or more Cutoff frequency: 500 MHz to less than 1 GHz Cutoff frequency: 100 MHz to less than 500 MHz Cutoff frequency: 10 MHz to less than 100 MHz IR-enhanced type For YAG laser detection

Segmented type photodiode One-dimensional, two-dimensional photodiode array

For analytical instrument and precision measurement

With scintillator Large photosensitive area type

S i P H O T O D I O D E S

Product lineup

1 Si photodiode

2 Si PIN photodiode

3 Multi-element type Si photodiode

4 Si photodiode with preamp

5 TE-cooled type Si photodiode

6 Si photodiode for X-ray

14

Product name Feature

Photodiode modules are high-precision photodetectors combining a Si photodiode and current-to-voltage conver-sion amp.

Photosensor amplifi ers are current-to-voltage conversion amplifi ers used to amplify very slight photocurrent from a photodiode with very low noise.

To make our photodiodes easier to use, we offer a variety of modules.

Photodiode module

Photodiode module

Photosenser amplifi er

Next-generation Si devices with enhanced IR sensitivity using a MEMS technology

IR-enhanced Si PIN photodiode

HAMAMATSU has developed a technology that greatly improves sensitivity in the near infrared region by forming a special MEMS structure on the light input surface of Si detectors using our own unique laser processing techniques. Applying this technology to Si detectors such as photo-diodes now makes possible the mass production of near infrared detectors that are low cost and easy to handle.

T O P I C

0.8

0.6

0.4

0.2

0200 800 1000600400

Wavelength (nm)

1200

Phot

osen

sitiv

ity (

A/W

)

(Typ. Ta=25 °C)

IR-enhancedSi PIN photodiode

Previous type

QE=100%

KPINB0374EA

■ Spectral response example

15

[Si APD] S i A V A L A N C H E P H O T O D I O D E S

High-speed, high-sensitivity photodiodes with an internal gain mechanismAPD (avalanche photodiodes) are high-speed, high-sensitivity photodiodes that internally amplify photocurrent by the application of a reverse voltage.Delivers a higher S/N than PIN photodiodes and is widely used in optical rangefi nders, FSO (free space optics), scintillation detectors, etc.

1 Short wavelength type 2 Near infrared type

Features Major applications

Excellent linearity with respect to incident light

Low noise

Wide spectral response range

Mechanically rugged

Compact and lightweight

Long life

Low-light-level detection

Analytical instrument

FSO

Optical rangefi nder

Optical fi ber communications

Laser radar

YAG laser detection

Wavelength (nm)

Phot

osen

sitiv

ity (

A/W

)

200 400

55

50

40

30

20

10

45

35

25

15

5

0600 800 1000 1200

Near infrared type(800 nm band, low terminal capacitance)

Near infrared type(low bias operation)

IR-enhanced type(1000 nm band/high sensitivity)

Near infrared type(low temperature coefficient)

Short wavelength type(low bias operation)

(Typ. Ta=25 °C, M=50, λ=650 nm)

Short wavelength type(low terminal capacitance)

KAPDB0096EF KAPDB0162EC

Spectral response Cut-off frequency vs. recommended wavelength

Wavelength (nm)

Cuto

ff f

requ

ency

(M

Hz)

High

Low

200 400 600 800 1000 1200

Short wavelength type(low bias operation)

Short wavelength type(low terminal capacitance)

Near infrared type(low bias operation, lowtemperature coefficient)

Near infrared type(1000 nm band/high sensitivity)

Near infrared type(800 nm band, low terminal capacitance)

0

200

400

600

800

1000

S i A V A L A N C H E P H O T O D I O D E S

16

Type Recommended wavelength Package Features

Low-bias operation

Low-bias operation

Low temperature coeffi cient

800 nm band, low terminal capacitance

1000 nm band/high sensitivity

Low terminalcapacitance

200 to 650 nm

600 to 800 nm

600 to 800 nm

800 to 1000 nm

900 to 1150 nm

320 to 650 nm

Metal

Metal

Surface mount type

Metal

Metal

Metal

Metal,ceramic

Enhanced sensitivity in the UV to visible range

High sensitivity in near infrared region and low bias voltage operation

Low-cost, miniature and thin package

Easy voltage adjustment due to low temperature coef-fi cient of bias voltage

Enhanced sensitivity in 800 nm band

Low blas (low operation voltage) type withenhanced sensitivity in 1000 nm band

These modules consist of an APD, low-noise amplifier, and

bias power supply integrated in a compact package.

Product lineup

APD modules

1Short wavelength type

2Near infrared type

Type Features

Contains a near infrared or short wavelength type APD. FC/SMA fi ber adapters are also provided.

High gain type for detection under low illuminance

Digital temperature-compensation, high-stability APD module

Operates over a wide range of frequencies(up to 1 GHz)

High-sensitivity type for low-light-level detection. Offers greatly improved stability by thermoelectric cooling.

Standard type

High-sensitivity type

High-stability type

High-speed type

TE-cooled type Response speed (Hz)

DC103

1010

104

105

106

107

108

109

Sens

itivi

ty (

V/W

)

100 10 k10 1 k 100 k 1 M 10 M 100 M 1 G

Two-stage TE-cooled typeDC to 5 kHz, -1.25 × 109 V/W

DC to 100 kHz-1.5 × 108 V/W

50 kHz to 1 GHz2.5 × 105 V/W

9 types are available accordingto active area size and

wavelength range.4 kHz to 100 MHz

-1 × 104 V/W

One-stageTE-cooled type

10 kHz to 100 MHz-2.5 × 105 V/W

DC to 10 MHz1.5 × 106 V/W

C4777-01

C5460-01

C5460

C5658

C5331 series C4777

DC to 10 MHz2.5 × 106 to 1.25 × 107 V/W

C10508

KACCB0115EC

Sensitivity vs. response speed (APD modules)

17

[MPPC®] M U L T I - P I X E L P H O T O N C O U N T E R S

Compact opto-semiconductors with excellent photon-counting capabilityThe MPPC (multi-pixel photon counter) is a new type of photon-counting device made up of multiple APD (avalanche photodiode) pixels operated in Geiger mode. The MPPC is essentially an opto-semiconductor device with excellent photon-counting capability and which also possesses great advantages such as low-voltage operation and insensitivity to magnetic fi elds.

Features Major applications

Excellent photon-counting capability

Room temperature operation

Low-bias (below 100 V) operation

High gain: 105 to 106

Excellent time resolution

Insensitive to magnetic fi elds

Small size

Simple readout-circuit operation

MPPC module available (option)

Fluorescence analysis, fl uorescence lifetime measurement

Biological fl ow cytometry

Confocal microscopes

Biochemical sensors

Bioluminescence analysis

Single molecule detection

PET

Scintillation light detection

Cerenkov light detection

What is the MPPC ?The MPPC is a kind of so-called Si-PM (silicon photomultiplier) device. It is a photon-counting device consisting of multiple APD pixels operating in Geiger mode. Each APD pixel of the MPPC outputs a pulse signal when it detects one photon. The signal output from the MPPC is the total sum of the outputs from all APD pixels. The MPPC offers the high performance needed in photon counting and is used in diverse applications for detecting- extremely weak light at the photon-counting level.

1 Ceramic type

4 Plastic package(surface mount type)

2 Metal type 3 TE-cooled type

5 Array type

M U L T I - P I X E L P H O T O N C O U N T E R S

18

Type Active area Number of pixels Pixel size Spectral response range

1 × 1 mm

3 × 3 mm

3 × 3 mm

1 × 1 mm/ch(1 × 4 ch array)

3 × 3 mm/ch(2 × 2 ch array)

3 × 3 mm/ch(4 × 4 ch array)

1 × 1 mm

1 × 1 mm

1600

400

100

14400

3600

900

1600

1600

14400

1600/ch

14400/ch

400

400

3600

400/ch

3600/ch

14400/ch

100

100

900

100/ch

900/ch

3600/ch

25 × 25 μm

50 × 50 μm

100 × 100 μm

25 × 25 μm

50 × 50 μm

100 × 100 μm

25 × 25 μm

25 × 25 μm

25 × 25 μm

25 × 25 μm

25 × 25 μm

50 × 50 μm

50 × 50 μm

50 × 50 μm

50 × 50 μm

50 × 50 μm

25 × 25 μm

100 × 100 μm

100 × 100 μm

100 × 100 μm

100 × 100 μm

100 × 100 μm

50 × 50 μm

320 to 900 nm

The MPPC module is a photon-counting module capable of low-light-level detection. This module

consists of an MPPC device, current-to-voltage converter circuit, high-speed comparator circuit, high-

voltage power supply circuit, temperature-compensation circuit, counter circuit, and microcomputer.

The module also has a USB port for connecting to a PC. The threshold level (detection level for one

photon) can be changed from a PC. The MPPC module is designed to extract maximum MPPC perfor-

mance and so yields excellent photon-counting characteristics. Potential applications include fl uores-

cence measurement, DNA analysis, environmental chemical analysis and high energy physics experi-

ments, as well as many other areas in a wide range of fi elds.

Connection example Measurement example(Analog output, C10507-11-050U)

MPPC modules

Product lineup

Related products

1 Ceramic type

2 Metal type

3 TE-cooled type

4Plastic package(surface mount type)

5 Array type

Oscilloscope

Frequency counter

PC(with supplied software installed)

MPPC moduleC10507 series

Lightsource Photon

Object

USB cable(accessory ofMPPC module)

Comparatoroutput

Analog output

KACCC0373EA

19

Features Major applications

[Photo IC and related products] P H O T O I C

Highly functional devices integrating photodiodes with signal processing circuitsThe photo IC is a light receiver element with various functions. It integrates a photosensitive element and a signal process-ing circuit into one package.

1 Schmitt trigger circuit photo IC

6 Photo IC for encoder,Encoder module

7 Photo IC for optical switch

9 Phototransistor

8 Photo IC forlaser beamsynchronousdetection

4 Color sensor

5 Photo IC for optical link

2 Light modulation photo IC 3 Illuminance sensor

Small and lightweight

Highly resistant to noise from electromagnetic induction

High reliability

Offers custom designs for producing optical

sensors to meet specifi c applications.

Merges IC design technology, CMOS circuit

technology, optical device technology, and

packaging technology.

Allows the fabrication of subminiature de-

vices that integrate multiple functions.

Paper detection in offi ce machines (copier, fax machines, etc.)

Optical switch

Light dimmers for liquid crystal panels and large-screen TV, etc.

Color adjustment for display

Plastic optical fi ber communications

Encoder

HAMAMATSU photo IC technology

Simplified external circuitreduces the total cost.

External circuit Minimum hardware Minimum software

Minimizes digital noise.

Responds to sophisticated needs. Delivers high linearity, low noise, and wide dynamic range.

Makes it easy to use photo IC. Simplifies externalinput/output terminals.

Provides spectral responsecharacteristics, etc. optimizedfor specific needs.

Interface

A/D converterAnalog signalprocessing circuit

Digital signalprocessing

circuit

Photosensor

Photo IC

P H O T O I C

20

Product lineup

DigitalUses a 4-element photodiode that can be used to easily confi g-ure an encoder with 2-phase digital output

6Photo IC for encoder,Encoder module

Type Output Features

Digital

Digital

Analog/Digital

Digital

Digital (receiver photo IC)

Digital

Digital

Analog

Photo IC integrates a photodiode, amplifi er, Schmitt trigger cir-cuit and output transistor, etc. into one chip

Employs synchronous optical detection to ensure stable output even under fl uctuating background light

Has spectral response characteristics close to human visual sensitivity

Has sensitivity to red, green and blue light

Photo IC transmitters and receivers for plastic optical fi ber com-munications

Has functions needed for industrial optical switches

For detecting laser beam print-start timing in laser printers and digital copiers

Amplifi es the photocurrent generated by input light. Allows a larger current to be drawn even from a small active area when compared to photodiodes.

HAMAMATSU photo ICs are widely used for many different needs.

1Schmitt trigger circuit photo IC

2 Light modulation photo IC

3 Illuminance sensor

4 Color sensor

5Photo IC for optical link (POF)

7 Photo IC for optical switch

8Photo IC for laser beamsynchronous detection

9 Phototransistor

Photo IC forgeneral use

Photo IC forspecial use

Application examples

Air conditioner: light/dark sensing

Station ticket gate: passenger sensing

Photo IC diode

Clocks: light/dark sensing

Photo IC diode

Light modulation photo IC

Factories

Detection of product passage

Light modulation photo IC,Photo IC for optical switch

Safety devices

Light modulation photo IC,Photo IC for optical switch

Digital copiers /Multifunctional digital office machines

Paper size detection

Light modulation photo IC

Laser origin point detection for writing on print drum

Photo IC for laser beam synchronous detection

Signal transmission

Transmitter/Receiver photo IC for optical link

Remaining paper amount detection

Light modulation photo IC

Display backlight brightness adjustment

Photo IC diode

Mirror and lens positioning

Photo IC for encoder/Encoder module

Color toner contrast detection

Digital color sensor

Sorter leftover paper detection

Light modulation photo IC

Photo IC diode

Photo IC diode

Vending machine: light/dark sensing

Large screen TV: light/dark sensing

Photo IC diode

Photo IC diode

Auto lighting equipment: light/dark sensing Auto hand washer: hand sensing

Boiler: flame monitor

Light modulation photo IC

0.1 eV

InGaAsimage sensor(Long wave-length type)

1 eV10 eV100 eV1 keV10 keV100 keV

0.01 nm 0.1 nm 1 nm 10 nm 100 nm 1 μm 10 μm

1 MeV

InGaAsimagesensor

NMOSimage sensor

CMOSimage sensor

Back-thinned CCD

Photon energy

Wavelength

Front-illumi-nated CCD

Front-illuminated CCD(Windowless type)

NMOS image sensor(Windowless type)

CCD for X-ray imaging

X-ray flat panel sensor

Back-thinned CCD (Windowless type)

Wavelength [nm] =1240

Photon energy [eV]

21

Features Major applications

Example of detectable energy level and spectral response range

[Image sensors] I M A G E S E N S O R S

A wide lineup of image sensors suitable for spectroscopy and measurement applicationsHAMAMATSU provides various types of image sensors that cover a wide energy level and spectral response range from near infrared (NIR) at 2.6 μm through visible, ultraviolet, vacuum ultraviolet (VUV) down to soft X-rays and hard X-rays at several hundred keV.

1 Front-illuminated CCD area image sensor 2 Back-thinned CCD image sensor

3 NMOS linear image sensor

6 Photodiode array with amplifi er 7 X-ray image sensor

4 CMOS linearimage sensor 5 InGaAs image sensor

A wide lineup covering different wavelengths Spectrophotometry

Scientifi c measurement

NIR spectrometry

X-ray imaging

KMPDC0106EF

I M A G E S E N S O R S

22

Product lineup

Product name Features Lineup

CCD area image sensors with low dark current and low noise are suitable for scientific measurement instruments.

Image sensors with high UV-sensitivity and excel-lent output linearity, making them suitable for pre-cision photometry

Image sensors for near infrared region. Built-in CMOS IC allows easy operation.

Sensors combining a Si photodiode array and a signal processing IC. A long, narrow image sensor can also be confi gured by arranging multiple arrays in a row.

Image sensors and photodiode arrays delivering high quality X-ray images by coupling FOS (fiber optic plate coated with X-ray scintillator) or phos-phor sheet.

CCD image sensors delivering high quantum effi-ciency from visible to VUV region

Image sensors integrated with signal process-ing circuits, making them suitable for applications where low power consumption and downsizing of the detector unit are essential

Spectral response (typical example)

For spectrophotometry For spectrophotometry (long-integration type) For spectrophotometry (near infrared-enhanced type) For scientifi c measurement

Current output type Current output type (infrared-enhanced type) Voltage output type

For NIR spectrometry For DWDM monitor For NIR image detection

Long and narrow area type For non-destructive inspection

CCD area image sensors fordental imaging

CCD area image sensors forTDI operation

Photodiode arrays with amplifi er for non-destructiveinspection

For spectrophotometryHigh-resolution type, High-sensitivity type, Large full-well type, IR-enhanced type, Built-in electronic shutter type

For scientifi c measurement Back-thinned TDI-CCD

( )

Standard type High-speed readout type Digital output type Plastic package

KMPDB0276EB

Qua

ntum

eff

icie

ncy

(%)

Wavelength (nm)

(Typ. Ta=25 °C)

0200 400 600 800 1000 1200

10

20

30

40

50

60

70

80

90

100

Back-thinnedtype

Front-illuminated type

Front-illuminated type(NIR high sensitivity)

Back-thinned type(UV high sensitivity)

Wavelength (μm)

Phot

o se

nsiti

vity

(A/

W)

0.5 1.0 1.5 2.0 2.5 3.00

0.5

1.0

1.5(Typ.)

G9201 to G9204/G9211 to G9214/G9494 series

G9206-256W G9207-256W

G9205-256WG9208-256W

G11135/G11620series

G11608series

Td=25 ˚CTd=-10 ˚CTd=-20 ˚C

KMIRB0033EE

1Front-illuminatedCCD area image sensor

2Back-thinnedCCD image sensor

3 NMOS linear image sensor

4 CMOS linear image sensor

5 InGaAs image sensor

6 Photodiode array with amplifi er

7 X-ray image sensor

CCD area image sensor (without window) InGaAs linear image sensor

Back-thinned CCD area image sensors with enhanced IR sensitivity using a MEMS technology

IR-enhanced CCD area image sensor

HAMAMATSU has developed a technology that greatly improves sensitivity in the near infrared region by forming a special MEMS structure on the light input surface of Si detectors using our own unique laser processing techniques. Applying this technology to back-thinned CCD area image sensors now makes possible the mass production of near infrared detectors that are low cost and easy to handle.

T O P I C

Qua

ntum

eff

icie

ncy

(%)

Wavelength (nm)

(Typ. Ta=25 °C)

0200 400 600 800 1000 1200

10

20

30

40

50

60

70

80

100

90

Front-illuminated CCD

IR-enhanced typeBack-thinned CCD

Back-thinned CCD

KMPDB0329EA

■ Spectral response examples

23

Major applications

Product lineup

TypePixel size

(μm)Active area

[(H) × (V) cm]Frame rate (frames/s)

Features

100 12 × 12 17 to 280

100 10 × 7 30 to 265High-speed, high-sensitivity type suitable for CT imaging and panoramic imaging.Supplied without case for assembly into equipment.

100 15 × 0.6 300

505 × 5 to 12 × 12

1 to 4Suitable for imaging of low-energy X-rays and com-patible with X-ray sources with 17 keV Mo target

505 × 5 to 12 × 12

3Active pixel sensor for low-noise readout and com-patible with X-ray below 18 keV

50 to 1005 × 5 to 12 × 12

2 to 7Suitable for use with sealed-off microfocus X-ray sources (50 kVp to 100 kVp)

[Flat panel sensors] F L A T P A N E L S E N S O R S

Capturing high-resolution, high-quality X-ray images in real-timeFlat panel sensors are digital X-ray image sensors capable of acquiring high-resolution, high-quality X-ray images in real-time. A fl at panel sensor is made up of a sensor board and a control board, designed for a thin, compact confi guration.

CT imaging/panoramic imaging, biochemical imaging, etc.

Radiography

X-ray diffraction

Non-destructive inspection

1For rotational radiography(bare board type)

2 For biochemical imaging

3 For X-ray diffraction

4For non-destructive inspection

2 For biochemical imaging 3 For X-ray diffraction 4 For non-destructive inspection

1 For rotational radiography (bare board type)

24

Product lineup

Type Lineup

Visible light cut-off type suitable for detection of near infrared light

High IR-sensitivity

Suitable for detection of microscopic spot light such as from a laser diode

Long, narrow type with active area length of 30 mm or more

High-speed response, low dark current, superior position-detection characteristic

Excellent position resolution

Wide spectral response range

High-speed response

Simultaneously detects light intensity and center-of-gravity position

of a spot light

High reliability

Position and angle sensing

Distortion and vibration measurements

Optical rangefi nders

Optical switches

Precise position measurements such as laser

displacement meters

1 One-dimensional PSD

2 Two-dimensional PSD

[PSD (position sensitive detectors)] P O S I T I O N S E N S I T I V E D E T E C T O R S

Light spot position sensors used for distance and angle measurementsA PSD is a non-discrete type position photosensor that makes use of photodiode surface resistance. It provides position data as a continuous electrical signal and offers high position resolution, high-speed response, and high reliability.

1 One-dimensional PSD 2 Two-dimensional PSD

Features Major applications

25

[Infrared detectors] I N F R A R E D D E T E C T O R S

Product lineup to meet various needs for spectral response rangeInfrared detectors are utilized in a wide range of fi elds such as measurement, chemical analysis, industry, agriculture, medicine, physics and chemistry, communications, and aerospace applications.

KIRDB0259EH

1 InGaAs PIN photodiode

4 Two-color detector5 Photon drag detector

2 PbS/PbSe

photoconductive

detector

3 InSb photoconductive detector/photovoltaic detector,

MCT (HgCdTe) photoconductive detector/photovoltaic detector,

InAsSb/InAs photovoltaic detector

■ Spectral response (typical example)

Wavelength (μm)

108

17 18 19 20 21 22 23 24 25

D*

(cm

· H

z /W

)1 2

1 2 30 4 5 6 7 8 9 10 11 12 13 14 15 16

109

1011

1010

1012

1013

1014

MCT (-60 ˚C)

PbSe (-20 ˚C)

InAsSb (-30 ˚C)

InSb (-196 ˚C)

PbSe (25 ˚C)

MCT (-196 ˚C)

PbS (-20 ˚C)

PbS (25 ˚C)

Short-wavelength enhanced type InGaAs (25 ˚C)

Long wavelength type InGaAs (25 ˚C)

Long wavelength type InGaAs (-196 ˚C)

Si (25 ˚C)

MCT (-196 ˚C) MCT (-196 ˚C)

InAs (-196 ˚C)

InAsSb (-196 ˚C)

26

Product lineup

Product name Spectral response range Features Major application

0.9 to 1.7 μm

0.5 to 1.7 μm

0.9 to 1.9 μm

0.9 to 2.1 μm

0.9 to 2.6 μm

1 to 3.2 μm

1 to 5.2 μm

1 to 6.7 μm

1 to 5.5 μm

1 to 5.8 μm

1 to 3.8 μm

1 to 25 μm

1 to 13.5 μm

0.2 to 4.85 μm

0.2 to 3 μm

0.32 to 2.55 μm

10 μm

Si + PbSe

Si + PbS

Si + InGaAs

High-speed response Various types of active areas, arrays and packages available TE-cooled type available

High detectivity Can be used at room temperatures in a wide range of applications such as radiation ther-mometers and fl ame monitors

Detects wavelengths up to 5.2 μm Offers higher response speed at room tempera-tures compared to other detectors used in the same wavelength range. Suitable for a wide range of applications such as gas analyzers.

Detects wavelengths up to around 6.5 μm, with high sensitivity over long periods due to thermoelectric cooling

Suitable for CO2 and SOx (SO, SO2, SO3) gas analysis due to high sensitivity in the 3 to 5 μm band

Covers a spectral response range close to PbSe but offers higher response speed

Covers a spectral response range close to PbS but offers higher response speed

Infrared detector in the 5 μm spectral band, with high sensitivity and high reliability

Different types of spectral response ranges are provided by changing the composition ratio of HgTe and CdTe.

Available with thermoelectric coolers, cryo-genic dewars

Wide spectral response range from UV to IR Two-color detectors incorporate an infrared-trans-mitting Si photodiode mounted over a PbS detec-tor, PbSe detector or InGaAs PIN photodiode

High-speed detectors with high sensitivity in 10 μm band (for CO2 laser detection)

Room temperature operation with high- speed response

High-speed response Low noise

Optical fi ber communications Optical power meter Gas analyzer Water content analyzer NIR (near infrared) photometry

Radiation thermometer Flame monitors Water content analyzer Food ingredient analysis Spectrophotometers

Radiation thermometer Flame monitors Gas analyzer Film thickness gauge

Environment measurements(gas analysis, etc.) Radiation thermometer (5 μm band) FTIR IR laser detection

Gas analyzer Infrared radiation measurement Infrared spectrophotometry FTIR

Spectrophotometers Laser monitors Flame monitors Radiation thermometer

CO2 laser detection Infrared detection

Thermal imaging Remote sensing

FTIR CO2 laser detection Spectrophotometers

Radiation thermometer Thermal imaging Remote sensing Gas analyzer FTIR Spectrophotometers

FTIR Thermal camera Radiation thermometer Spectrophotometers Environmental measurement Astronomy and space observation

1 InGaAs PIN photodiode

2 PbS photoconductive detector

2 PbSe photoconductive detector

3 InSb photoconductive detector

3 InSb photovoltaic detector

3 InAsSb photovoltaic detector

3 InAs photovoltaic detector

3MCT (HgCdTe) photoconductivedetector

3MCT (HgCdTe) photovoltaic detector

5 Photon drag detector

4Two-colordetector

I N F R A R E D D E T E C T O R S

27

Major applications

Product lineup

Type Features

Si photodiode with a fi lter that corrects the spectral range to have sensitivity only in the vis-ible range

Photo ICs with spectral response characteristics close to human visual sensitivity

Compound semiconductor photosensor that delivers spectral sensitivity close to the human eye without using any fi lters

Exposure meter, illuminometer

Cellular phone backlight dimmer

Energy-saving sensor for large-screen TV, etc.

Light dimmers for liquid crystal panels

Automatic lighting system

Various types of light level measurement

2 Si photodiode

1 Illuminance sensor

3 GaAsP photodiode

[Visible light sensors] V I S I B L E L I G H T S E N S O R S

Spectral response close to that of the human eyeVisible light sensors are broadly used as illuminance sensors.

2 Si photodiode 3 GaAsP photodiode

1 Illuminance sensor

0.1

0.2

0.3

0.4

0.5

0.7

0.9

0.6

0.8

1.0

0200 400 600 800

Wavelength (nm)

1000 1200

Rel

ativ

e se

nsiti

vity

(Typ. Ta=25 °C, VR=5 V)

Human eye sensitivity

KPICB0121EA

■ Spectral response example (photo IC diode)

28

Major applications

Product lineup

Type Features

These are color sensors designed to respectively detect monochromatic colors of blue (λp=460 nm), green (λp=540 nm) and red (λp=660 nm).

These are color sensors molded into a plastic package having a 3-channel (RGB) photodiode sen-sitive to the blue, green and red regions of the spectrum.

These are color sensors sensitive to red, green, and blue light.Detected signals are output serially as digital data.

These modules are used for monitoring of LCD backlight colors and for simple color detection.

White balance adjustment

Color control, color identifi cation

Portable or mobile equipment

RGB-LCD backlight monitors

Light source color temperature detection

Various types of color detection

1 Si photodiode

2 RGB color photodiode

3 Digital color sensor

4 Color sensor module

[Color sensors] C O L O R S E N S O R S

Small sensor for LCD monitoring and simple color detectionHAMAMATSU provides single-color sensors that are sensitive to red, green and blue light, as well as RGB color sensors.

1 Si photodiode 2 RGB color photodiode

3 Digital color sensor 4 Color sensor module

Wavelength (nm)

Phot

osen

sitiv

ity (

A/W

)

400 7006003000

0.10

0.20

0.05

0.15

0.25

500 800

(Typ. Ta=25 °C)

Green

Red

Blue

KSPDB0246EA

■ Spectral response example (RGB color photodiode)

29

Product lineup

Type Features

Infrared

Red

Optimized lens shape allows these LEDs to emit highly collimated beams.High reliability is obtained since these LEDs do not use a current confi nement structure chip.

Long wavelength LED with peak emission wavelengths at 1.45 μm

These LEDs are suitable for 50 Mbps and 125 Mbps optical link.

These LEDs are high-power LEDs molded into a miniature, clear plastic package.

High-speed, high output power LED.Transmitter/receiver module for VICS (Vehicle Information and Communication System) is also available.

Refl ector type

Ball-lens type

Peripheral electrode type

Refl ector type

Ball-lens type

High output power

Narrow directivity, uniform emission pattern

Shadow of wire does not appear in emission pattern.

High output power

Narrow directivity, uniform emission pattern

1 For optical switch

2 For optical encoder

4 For FSO

5 For optical link

6 SIP type

3 For moisture detection

[LED] L I G H T E M I T T I N G D I O D E S

Infrared LED and red LED with high outputCompared to laser diodes, LEDs offer advantages such as lower cost and longer life. HAMAMATSU has developed and produced various types of LEDs that enhance emission effi ciency via a high output power LED chip mounted on a refl ective package base, which makes the light emitted from the chip edges refl ect towards the front.

4 For FSO (free space optics)

1 For optical switch

5 For optical link 6 SIP type

3 For moisture detection2 For optical encoder

High output

Available in various types of packages

Optical switch

Encoder

Light source for moisture meter

Optical rangefi nder

Optical fi ber communications

FSO

Features Major applications

30

Product lineup

Type Features

High-speed photodiodes available in a variety of packages (ROSA, metal, receptacle, pigtail).

HAMAMATSU provides large area photodiodes and high-power LEDs, as well as a light emitter/receiver module designed for vehicle-mounted VICS (Vehicle Information and Communication System).

These devices are used to monitor laser diodes or DWDM.

These are light receivers and emitters suitable for medium to low speed optical links.

1For high-speed optical fi ber communications

2 For optical data link

3 For FSO

4For optical power and wavelength monitor

[Optical communication devices] O P T I C A L C O M M U N I C A T I O N D E V I C E S

High-speed devices for optical fi ber communications and FSO (free space optics)HAMAMATSU provides high-quality receiver/transmitter devices designed for long-range, high-speed communications and short-range, low-speed communications, as well as FSO.

1 For high-speed optical fi ber communications

2 For optical data link

3 For FSO 4 For optical power and wavelength monitor

USBcable

Optical fiber forlight input

PC

Mini-spectrometer

Quartz cell

Light source

[Mini-spectrometers]Integrating an optical system, image sensor and circuitHAMAMATSU offers a full line of mini-spectrometers that are integrated with an optical system, image sensor, and circuit by fabricating the grating section using micromachining techniques.

Features

31

M I N I - S P E C T R O M E T E R S

Evaluation of light source characteristics

Taste analyzers

Water content measurement

Film thickness measurement

Semiconductor process control

Low-light-level measurement such as fl uorescence

measurement

Installation into measurement equipment

2 TM series

1 TG series

3 RC series 4 MS series

High throughput due to transmission grating made of quartz

Highly accurate optical characteristics

No external power supply required:

Uses USB bus power (Non-cooled type, excluding CCD type)

Low noise (Cooled type)

Compact design for easy assembly

Contains a wavelength conversion factor

(Data supplied only with OEM models)

Light to be measured is guided into the entrance port through an optical

fi ber and the spectrum measured with the built-in image sensor is output

through the USB port to a PC for data acquisition. There are no moving

parts inside the unit so stable measurements are obtained at all times. An

optical fi ber that guides light input from external sources allows a fl exible

measurement setup.

Connection example (transmission light measurement)

KACCC0524EA

Major applications

32

M I N I - S P E C T R O M E T E R S

Product lineup

TypeSeries Built-in image sensor Spectral response rangeSpectral resolution

(Spectral response half width)

High sensitivity TG-UV-CCD

High sensitivity TM-UV/VIS-CCD

High sensitivity TM-VIS/NIR-CCD

Small RC-VIS-MOS

Small RC-SWNIR-MOS

Small (OEM model) RC-VIS-MOS

Small (OEM model) RC-SWNIR-MOS

Ultra-compact MS-VIS-MOS

Ultra-compact MS-SWNIR-MOS

High sensitivity TG-SWNIR-CCD II

High resolution TG-UV-CCD

High resolution TM-UV/VIS-CCD

High resolution TM-VIS/NIR-CCD

For NIR TG-NIR-MOS

For NIR (cooled-type) TG-cooled NIR I

For NIR (cooled-type) TG-cooled NIR II

For NIR (cooled-type) TG-cooled NIR III

Wide dynamic range TG-UV-MOS

Wide dynamic range TM-UV/VIS-MOS

Wide dynamic range TM-VIS/NIR-MOS

Trigger-compatible TM-VIS/NIR-MOS II

Wide dynamic range TG-SWNIR-MOS

High resolution TG-RAMAN I

High resolution TG-RAMAN II

3 nm

0.3 nm*

6 nm

8 nm(320 to 900 nm)

3 nm

6 nm

8 nm

8 nm

9 nm

8 nm

5 nm(550 to 900 nm)

5 nm(550 to 1100 nm)

7 nm

7 nm

8 nm

20 nm

* Typical value

1 nm*

1 nm*

12 nm*

20 nm

1 nm*(320 to 900 nm)

200 to 400 nm

200 to 800 nm

320 to 1100 nm

340 to 780 nm

640 to 1050 nm

340 to 750 nm

640 to 1050 nm

500 to 1100 nm

900 to 1700 nm

790 to 920 nm

500 to 600 nm

900 to 1700 nm

1100 to 2200 nm

900 to 2550 nm

Back-thinnedCCD image sensor

Back-thinnedCCD image sensor

Back-thinnedCCD image sensor

Back-thinnedCCD image sensor

Infrared enhanced back-thinnedCCD image sensor

NMOS linear image sensor

InGaAs linear image sensor

CMOS linear image sensor

CMOS linear image sensor

CMOS linear image sensor

CMOS linear image sensorwith amp array

CMOS linear image sensor

Infrared enhanced typeCMOS linear image sensor

CMOS linear image sensor

1 TG series

2 TM series

3 RC series

4 MS series

33

[Opto-semiconductor modules]Modules using opto-semiconductors / Circuits for operating opto-semiconductorsHAMAMATSU provides a wide variety of opto-semiconductor modules developed by our own module technology capable of extracting the maximum performance from opto-semiconductors. Custom products are also available by request. Please feel free to consult us.

Module technologies

Optical device

Optical device Circuit Housing

ConnectorOptical system

[Example of opto-semiconductor module configuration]

Optical technology Opto-semiconductor technology MOEMS * technology● Optimized optical design

for high-performance modules● Lens / mirror / diffraction grating

● Light emitter/photosensor● Custom-designed optical device

enhances module performance.

● High-precision miciromachining process

● Miniaturization of module components with advanced functions* micro-opto-electro-mechanical systems

● Sample software allows rapid evaluation of moduleperformance.

● Compatible with USB andRS-232C

● Light emitters, sensors,optical systems, and othercomponents are optimized.

● High precision / high density mounting ● Housing ● Space saving (miniaturization) ● Noise elimination ● Board integrated with optical devices

● Optimized for optical device and application● High sensitivity / low noise / high-speed /

multichannel

Software technology

Hybrid technology

Assembly technologyCircuit technology

PhotodiodePhoto IC

LEDLD

Amp

Driver

Data processing

etc.[photosensor]

[light emitter]

1 Photosensor amplifi er

5 MPPC module

9 Multichannel detector head

10 Peripheral product for image sensor 11 Pulsed laser

diode module12 Charge amplifi er

6 PSD signalprocessing circuit 7 PSD module 8 RGB color

sensor module

4 APD module2 Circuit for Si photodiode 3 Photodiode module

O P T O - S E M I C O N D U C T O R M O D U L E S

34

Products Features Application example

These photosensor amplifi ers are current-to-voltage conver-sion amplifi ers for amplifying photocurrent with low noise.

Offering circuit designs that make Si photodiodes both simple and convenient.

Photodiode modules are high-precision photodetectors com-bining a Si photodiode and current-to-voltage conversion amp. Dedicated signal processing units are also provided.

APD modules are high-speed, high-sensitivity photodetectors us-ing an APD (avalanche photodiode). An APD, a low-noise ampli-fi er and a bias power supply are assembled into a compact case. By simply connecting to a low voltage DC power supply, these APD modules allow optical measurements with a S/N dozens of times higher than PIN photodiodes.

PSD modules are high-precision position-detectors combining a PSD and current-to-voltage conversion amp.Dedicated signal processing units are also provided.

Multichannel detector heads incorporate a driver circuit designed for various types of image sensors (CCD area image sensors, In-GaAs linear image sensors, NMOS linear image sensors). Control-ler for multichannel detector head is also available.

The MPPC (multi-pixel photon counter) is a new type of photon-counting device made up of multiple APD pixels operated in Gei-ger mode. The MPPC module is designed to extract maximum MPPC perfor-mance.

These are signal processing circuits for evaluation of PSDs (posi-tion sensitive detector).

The RGB color sensor module was specifi cally developed to moni-tor the power of RGB-LEDs.

Driver circuit and pulse generator that are designed to match the CCD image sensor and CMOS/NMOS/InGaAs linear image sensor types are provided.

HAMAMATSU provides a compact pulsed laser diode driver mod-ule integrated with a HAMAMATSU pulsed laser diode.

Low-noise charge amplifi er on which a HAMAMATSU S3590 se-ries Si PIN photodiode can be mounted for radiation detection or high-energy particle detection.

Precision photometry Optical power meters Laser monitors Plasma monitors

Performance evaluation of Si photodiode

Position measurement Displacement measurement

Precision photometry Light source power monitors Illuminometers, color difference meters

Low-light-level detection Optical power meters Laser monitors

Optical axis alignment Rangefi nder

3D measurement Length measurement

Spectrophotometer Raman spectroscopy Semiconductor inspection Radiation thermometry

Fluorescence lifetime measurement Biological fl ow cytometry Bioluminescence analysis Low-light-level detection

Analytical instruments

Performance evaluation of PSD

RGB-LED backlight monitor for TFT-LCD

Multichannel spectrophotometry

Laser radars Fiber optic measurementsystems

Optical measurement equipment

Detection of X-rays, radiation, high energy particles

O P T O - S E M I C O N D U C T O R M O D U L E S

Product lineup

1 Photosensor amplifi er

2 Circuit for Si photodiode

3 Photodiode module

4 APD module

5 MPPC module

6 PSD signal processing circuit

8 RGB color sensor module

10Peripheral product forimage sensor

11 Pulsed laser diode module

12 Charge amplifi er

7 PSD module

9 Multichannel detector head

Factory/Research laboratory/Domestic sales office

Main factory (Ichino) Mitsue factory Shingai factory

Entire company

Solid state division

Sendaisales office

Tokyo branch office

Osakasales office Tsukuba labolatory

Tsukuba sales office

Opto-semiconductors : Main factory (Ichino), Mitsue factory,Shingai factory

Electron tube products : Toyooka factory, Tenno glass works Beijing Hamamatsu photon techniques Ltd. (China)

System products : Joko factory Laser products : Miyakoda factory

Factories

Central research laboratory Tsukuba research laboratory Industries development laboratory

Laboratories

Tokyo sales office Osaka sales office Chubu sales office Sendai sales office Tsukuba sales office

Domestic sales offices

35

4000090732

3513979235

2654461518

3230273899

3519881489

3819684434

0 10000 20000 30000 40000 50000 800007000060000 90000 100000(million yen)

Toyooka factory

Central researchlaboratory

Industriesdevelopmentlaboratory

Miyakoda factory

Joko factory

Tenno glassworks JR Tokaido line

JR TokaidoShinkansen line

Tenryu Riverthe Sea of Enshu

Lake Sanaru Hamamatsustation

LakeHamana

Tomei express way

Hamamatsu IC

Hamamatsu nishi IC

Mikkabi IC

Main factory(Ichino)

Shingaifactory

Mitsuefactory

HeadquartersChubu sales office

Hamamatsu

2007

2006

2008

2009

2010

2011

Annual sales

Organization chart of solid state division

Bussiness Promotion

General Affairs

Management

Administration

Quality Control

CMOS integrated circuitThe 3rd, 5th Develop. Group

Module, softwareThe 1st Develop. GroupDevelopment

LED, NIR photodiode, optical communication deviceThe 11th Dept.

Compound semiconductor wafer processCompound Process Group

Infrared detectorThe 2nd Dept.

The 1st Mfg.

Si photodiode, Si APD, PSD, MPPCThe 30th Dept.

Si photodiode for X-rayThe 3rd Dept.The 2nd Mfg.

Photo IC, Si photodiode, PSD, LED (plastic package)The 36th Dept.The 3rd Mfg.

Mass product assemblyThe 1st Assembly GroupShingai Mfg.

Si wafer processProcess Production GroupSi Wafer Process

MOS image sensorThe 41st Dept.

CCD image sensorThe 34th Dept.

Circuit for image sensorThe 46th Dept.

The 4th Mfg.

Photosensor moduleThe 32nd Dept.

Light measurement module & unitThe 29th Dept.The 5th Mfg.

Flat panel sensorThe 45th Dept.

X-ray image sensorThe 44th Dept.The 6th Mfg.

Ceramic type assemblyThe 2nd Assembly Group

Metal type assemblyThe 1st Assembly Group

Plastic type assemblyThe 3rd Assembly Group

Production equipment & technologyProduction Technology Group

Mitsue Mfg.

36

MEMS processMEMS Process Group

MEMS products, SLMMEMS Device Prod. GroupMEMS

Cat. No. KOTH0001E13Mar. 2012 DNPrinted in Japan (3,000)

Main ProductsSi photodiodesAPDPhoto ICImage sensorsX-ray flat panel sensorsPSDInfrared detectorsLEDOptical communication devicesAutomotive devicesMini-spectrometers High energy particle/X-ray detectorsOpto-semiconductor modules

Hamamatsu also supplies:Photoelectric tubesImaging tubesLight sourcesImaging and processing systems

Information in this catalogue isbelieved to be reliable. However,no responsibility is assumed forpossible inaccuracies or omissions.Specifications are subject tochange without notice. No patentrights are granted to any of thecircuits described herein.

© 2012 Hamamatsu Photonics K.K.

Quality, technology, and serviceare part of every product.

HAMAMATSU PHOTONICS K.K., Solid State Division1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, JapanTelephone: (81)53-434-3311, Fax: (81)53-434-5184

www.hamamatsu.com

Sales OfficesJAPAN:HAMAMATSU PHOTONICS K.K.325-6, Sunayama-cho, Naka-kuHamamatsu City, 430-8587, JapanTelephone: (81)53-452-2141, Fax: (81)53-456-7889

China:HAMAMATSU PHOTONICS (CHINA) CO., LTD.1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu,Chaoyang District, Beijing 100020, ChinaTelephone: (86)10-6586-6006, Fax: (86)10-6586-2866E-mail: hpc@hamamatsu.com.cn

U.S.A.:HAMAMATSU CORPORATIONMain Office360 Foothill Road, P.O. BOX 6910,Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218E-mail: usa@hamamatsu.com

Western U.S.A. Office:Suite 200, 2875 Moorpark Avenue San Jose, CA 95128, U.S.A.Telephone: (1)408-261-2022, Fax: (1)408-261-2522E-mail: usa@hamamatsu.com

United Kingdom, South Africa:HAMAMATSU PHOTONICS UK LIMITEDMain Office2 Howard Court, 10 Tewin Road, Welwyn Garden City,Hertfordshire AL7 1BW, United KingdomTelephone: (44)1707-294888, Fax: (44)1707-325777E-mail: info@hamamatsu.co.uk

South Africa office:PO Box 1112Buccleuch 2066Johannesburg, South AfricaTelephone/Fax: (27)11-802-5505

France, Portugal, Belgium, Switzerland, Spain:HAMAMATSU PHOTONICS FRANCE S.A.R.L.19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, FranceTelephone: (33)1 69 53 71 00 Fax: (33)1 69 53 71 10E-mail: infos@hamamatsu.fr

Swiss Office:Dornacherplatz 74500 Solothurn, SwitzerlandTelephone: (41)32/625 60 60, Fax: (41)32/625 60 61E-mail: swiss@hamamatsu.ch

Belgian Office:Scientific Park,7, Rue du BosquetB-1348 Louvain-La-Neuve, BelgiumTelephone: (32)10 45 63 34Fax: (32)10 45 63 67E-mail: epirson@hamamatsu.com

Spanish Office:C. Argenters, 4 edif 2Parque Tecnologico del Valles E-08290 CERDANYOLA, (Barcelona) SpainTelephone: (34)93 582 44 30Fax: (34)93 582 44 31E-mail: infospain@hamamatsu.es

Germany, Denmark, Netherlands, Poland:HAMAMATSU PHOTONICS DEUTSCHLAND GmbHArzbergerstr. 10,D-82211 Herrsching am Ammersee, GermanyTelephone: (49)8152-375-0, Fax: (49)8152-265-8E-mail: info@hamamatsu.de

Danish Office:Lautruphoj 1-3DK-2750 Ballerup, DenmarkTelephone: (45)70 20 93 69, Fax: (45)44 20 99 10E-mail: info@hamamatsu.de

Netherlands Office:Televisieweg 2NL-1322 AC Almere, The NetherlandsTelephone: (31)36-5405384, Fax: (31)36-5244948E-mail: info@hamamatsu.nl

Poland Office:02-525 Warsaw,8 St. A. Boboli Str., PolandTelephone: (48)22-646-0016, Fax: (48)22-646-0018E-mail: jbaszak@hamamatsu.de

North Europe and CIS:HAMAMATSU PHOTONICS NORDEN ABMain OfficeThorshamnsgatan 35 16440 Kista, SwedenTelephone: (46)8-509-031-00, Fax: (46)8-509-031-01E-mail: info@hamamatsu.se

Russian Office:Vyatskaya St. 27, bld. 15Kosmodamianskaya nab. 52/1, 14th floorRU-127015 Moscow, RussiaTelephone: (7) 495 258 85 18, Fax: (7) 495 258 85 19E-mail: info@hamamatsu.ru

Italy:HAMAMATSU PHOTONICS ITALIA S.R.L.Strada della Moia, 1 int. 620020 Arese, (Milano), ItalyTelephone: (39)02-935 81 733Fax: (39)02-935 81 741E-mail: info@hamamatsu.it

Rome Office:Viale Cesare Pavese, 43500144 Roma, ItalyTelephone: (39)06-50513454, Fax: (39)06-50513460E-mail: inforoma@hamamatsu.it

Taiwan:HAKUTO TAIWAN LTD.6F, No.308, Pa teh Road, Sec, 2,Taipei, Taiwan R.O.C.Telephone: (886)2-8772-8910Fax: (886)2-8772-8918

KORYO ELECTRONICS CO., LTD.9F-7, No.79, Hsin Tai Wu Road Sec.1, Hsi-Chih, Taipei, Taiwan, R.O.C.Telephone: (886)2-2698-1143, Fax: (886)2-2698-1147

Republic of Korea:SANGKI CORPORATIONSuite 431, World Vision BLDG.24-2 Yoido-DongYoungdeungpo-KuSeoul, 150-877Telephone: (82)2-780-8515Fax: (82)2-784-6062

Singapore:HAKUTO SINGAPORE PTE LTD.Block 2, Kaki Bukit Avenue 1, #04-01 to #04-04Kaki Bukit Industrial Estate, Singapore 417938Telephone: (65)67458910, Fax: (65)67418200

Sales Offices