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Opto-semiconductorsCondensed Catalog
HAMAMATSU PHOTONICS K.K.
Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
time, Hamamatsu has developed and produced a wide range of opto-semiconductors such as
photodiodes, photo ICs, image sensors, and LEDs, as well as mini-spectrometers and many other
products using opto-semiconductors.
Our lineup of opto-semiconductors covers a broad spectrum from the infrared through the visible and
ultraviolet regions, extending to X-rays and even high energy particles. These are widely used in
many fields ranging from scientific measurements, medical diagnosis, communications, and
consumer electronics as well as in-vehicle applications.
In the days ahead, besides improving our semiconductor process and mounting/packaging technologies
to make them more sophisticated, we will fully utilize MOEMS (micro-opto-electro-mechanical systems)
technology that merges photonics technology with MEMS technology to develop opto-semiconductors
with even higher sensitivity, speeds, and functions.
Our unique photonics technology delivers highly sophisticated opto-semiconductors withhigh-sensitivity and high-speed response.
Koei YamamotoRepresentative Director and Senior Managing DirectorDirector of Solid State DivisionHamamatsu Photonics K. K.
C o n t e n t s
Applications of Hamamatsu opto-semiconductors ..................................... 3 - 5Opto-semiconductor selection guide .................................................... 6 - 8Manufacturing process of opto-semiconductors ................................. 9 - 12Map / Annual sales / Organization chart............................................35 - 36
1
Opto-semiconductorsevo lv ing wi th theadvancement o f
MOEMS techno logy
Opto-semiconductordevices
MOEMSd e v i c e s
CompactHighly functionalHigh reliability
MEMS technology
Etching
Nanoimprint
Three-dimensionalmounting technology
Assembly technology Module technologySemiconductor process technology
∙Wide spectral range(UV/visible/infrared, X-ray, high energy)
∙ High sensitivity, high-speed response∙Highly functional devices based on CMOS circuit technology
Si process
Compound semiconductorprocess
∙General-purpose and highly reliable packages,surface mount type, CSP,flip-chip bonding∙ Flexible customization∙ Ready for low- and high-volume production
Optics
Assembly
Various packages
Analysis Circuitry
Software
∙Optimum optical design and effective simulation
∙ Analog and digital circuits,ASIC, FPGA
∙ Supports various interfaces
Downsize, integration
∙ Semiconductor micromachining to produce mechanical parts, optical elements, sensors, and wafer level packages
Hamamatsu opto-semiconductors
LED.............................................. 29Optical communication devices....... 30Mini-spectrometers................. 31 - 32Opto-semiconductor modules.. 33 - 34
Flat panel sensors ......................... 23PSD (position sensitive detectors)... 24Infrared detectors .................. 25 - 26Visible light sensors ....................... 27Color sensors ................................ 28
Si photodiodes ....................... 13 - 14Si APD................................... 15 - 16MPPC®................................... 17 - 18Photo IC ................................ 19 - 20Image sensors ....................... 21 - 22
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©Frank Boston-Fotolia.com
RGB color sensors
Our automotive devices are widely used in vehicles. (In-vehicle LAN, ambient light level detection, day/night detection, windshield rain sensors, laser radars, multi-function jog dials, pedestrian protection systems, glare-proof mirrors, etc.)
Automotive applicationsRGB color sensors detect the brightness and color temperature of room light and adjusts the display colors.
LCD color adjustment
Our Si photodiodes are widely used as detectors in X-ray baggage inspection systems.
X-ray non-destructive inspection
Si photodiode arrays
CCD area image sensors are used in panoramic/cephalometric imaging equipment for dental diagnosis.
Dental X-ray imaging
CCD area image sensors
Applications of Hamamatsu opto-semiconductorsHamamatsu opto-semiconductors have been used in wide-ranging fields including communications, industry and general electronics as well as medical and scientific applications.
Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)]
3
©Nmedia-Fotolia.com
Si APD
Si APD and PIN photodiodes are used in surveying instruments for distance measurement.
RangefindersWe provide light transmit-ter and receiver devices for optical fiber communi-cations and FSO (free space optics).
Optical communications
Optical communication related devices
The MPPC is used in diverse applications for detecting extremely weak light at the photon-counting level.
Photon counting
Automotive devices
The world’s highest sensitivity CCDs manufactured by Hamamatsu are installed in the Suprime Cam/Subaru Prime Focus Camera of the Subaru Telescope at the summit of Mauna Kea, Hawaii.
Astronomical observation
CCD area image sensorFlat panel sensor
Subaru Telescope [by courtesy of NAOJ Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)](National Astronomical Observatory of Japan)]Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)]
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©Zoe-Fotolia.com
MPPC
Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)]
The European Organization for Nuclear Research (CERN) in Switzer land is conducting a project involving the Large Hadron Collider (LHC). The Si strip detec-tor by HAMAMATSU is being used as the particle track detector in the collider, and is detecting particle tracks with a preci-sion on the order of several tens of μm.
High energy experiments
Si APDSi strip detector
Infrared LED and Si PIN photodiode arrays are used to configure encoders built into robots for position control.
Industrial robots
Si PIN photodiode arraysInfrared LED
Back-thinned TDI-CCD image sensors are used for wafer defect inspections.
Semiconductor manufacturing equipment
Back-thinned TDI-CCD image sensors
CMS project(by courtesy of CERN)
Applications of Hamamatsu opto-semiconductors
5
Opto-semiconductor selection guide
Visible
IR
Segmented type
X-ray
Near IR
IR
1D
Non-segmented type
Point sensor
Photon counter
Image sensor
Position sensor
High energy particle
Visible
2D
UV
Im
P
Lightemitter
Photosensor
6
[Product name] [Applications]
Red LED Optical switches, optical fiber communications
Infrared LED Optical switches, light sources for measurement devices, optical communication devices, automatic control systems, rotary encoding
Si photodiode with compensation filter Illuminometry, copiers, color sensors
Diffusion type GaAsP photodiode Illuminometry, flame eyes (monitors)
Illuminance sensor
Color sensor Display color adjustment, color detection
Energy-saving sensors for TV and the like, light dimmers for liquid crystal panels,backlight dimmers for cell phones, light level measurements
Si photodiode
Si APD (avalanche photodiode) Optical communication devices, information equipment, automatic control systems, general electronics, car electronics, photometric equipment, medical equipment, high energy physics
Photo IC Optical switches, office automation equipment, rotary encoders, optical fiber communications
InGaAs PIN photodiode Optical communication device, IR laser monitoring, radiation thermometry, industrial measurement
PbS/PbSe photoconductive detector Radiation thermometry, flame eyes, moisture analysis, gas analysis, spectroscopy
IR laser detection, spectroscopy, radiation thermometry, gas analysis, FTIR, thermal imaging
Thermal imaging, radiation thermometry, FTIR, gas analysis, CO2 laser detection
Photon drag detector CO2 laser detection
Thermopile detector Radiation thermometry, gas analysis, flame eyes
MPPC Medical equipment, nuclear medicine, high energy physics, radiation measurement
Linear image sensor Multichannel spectroscopy, spectrum analysis, optical measurement
Photodiode array Multichannel spectroscopy, color analysis, spectrum analysis, position detection
Multi-element photodiode Position detection
Si photodiode for X-ray Baggage inspection, non-destructive inspection, medical use
PSD (position sensitive detector) Rangefinding, displacement sensing, laser optics, automatic control systems, high energy physics
X-ray image sensor Radiography, non-destructive inspection
Area image sensor Fluorescence spectroscopy, Raman spectroscopy, scientific measurement, X-ray imaging, near infrared imaging
Flat panel sensor Radiography, X-ray diffractometers, non-destructive inspection
SSD High energy physics, nuclear medicine, industrial measurement
Optical communication devices, information equipment, automatic control systems, general electronics,car electronics, photometric equipment, medical equipment, high energy physics
InSb photoconductive detector,InSb/InAs/InAsSb photovoltaic detector
MCT (HgCdTe) photoconductive/photovoltaic detector
Si photodiode for UV light
Schottky type GaAsP photodiode
Schottky type GaP photodiode
Pollution analysis, spectroscopy, medical use, UV detection, colorimetry
Pollution analysis, spectroscopy, colorimetry, UV detection
UV detection
IR-enhanced Si photodiode/Si APD YAG laser monitoring, near infrared detection
7
Mini-spectrometer,photosensor amplifier,APD module, etc.
MiniphotAPD
Moduleproduct
Selection guide by wavelength
Wavelength
Phot
osen
sor
Ligh
t em
itter
0.2 0.4 0.6 0.8 1 2 4 6 8 10 20 (μm)
GaAs LED
GaAlAs LED
AlGaInP LED
Si
GaP
InGaAs
PbS
PbSe
InAs
InSb
MCT
Thermopile detector
InAsSb
GaAsP
Spectralrange
UV Visible Near IR Middle IR Far IR
8
Thin films are formed on wafers by oxidation or CVD process.
Oxidation
SiO2
Si
Device patterns are formed by photolithographic technique.
Photolithography
SiResist
SiO2
Photomask
Selective etching is performed on the thin film on wafers.
Etching
Si
Resist
SiO2
[Typical process of Si photodiode fabrication]
Design for new products Design for custom products
Thin-film crystal growth under ultra-high vacuum in MBE equipment Thin-film crystal growth with MOCVD equipment
[Typical compound semiconductor fabrication process]
Hamamatsu has been manufacturing a wide range of opto-semiconductors using our unique wafer process technologies.
Fabricates high-speed photodiodes by integrating a PIN photodiode and high-speed signal processing circuits onto a single chip.
PIN bipolar process
The integration of circuit functions in photodetectors helps to achieve high performance, multifunctionality, and cost reduction in systems.
CMOS process
Back-thinned CCD area image sensors have a very thin photosensitive layer for high sensitivity yet low dark current.
Back-thinned CCD process
Utilizing compound semiconductor process technologies that include MBE, MOCVD, and dry etching techniques optimized for precision processing, we have been developing high-performance devices for optical communications, chemical analysis, and measurement.
Compound process
Manufacturing technologies
Product examples produced using our compound semiconductor process
InGaAs APD InGaAs linear image sensors
Semiconductor process technologies
Si wafer (before process)
Wafer process
Design Epitaxial growth process
Electrical and opticalcharacteristics
Active area Number of elements Package Reliability
[Example of custom orders]
Product examples produced using our CMOS process
Digital color sensors CMOS image sensors
Manufacturing process of opto-semiconductors
9
Doping impurities are injected into wafers.
Ion implantation
Si Diffusion layer
SiO2
Ion
Metal pattern is formed.
Metallization
Metal
SiDiffusion layer
SiO2
Devices on the wafer are inspected electrically and optically.
Wafer inspection
Metal
SiDiffusion layer
SiO2
Main factory (Ichino)
To assembly process
Etching is a basic semiconductor process technology. MEMS technology utilizes anisotropic etching and sacrificial layer etching as well as conventional etching techniques to provide versatile functions impossible to achieve by conventional opto-semiconductors.
EtchingNanoimprint is a technology for fabricating fine structures at a high throughput. Light curing resin is applied to a substrate upon which a master substrate with a fine structure is then pressed. Light is then irradiated to transfer the nanoscale structure to the resin.
Nanoimprint3D mount technology can be broadly grouped into “electrode technology” for fabricating structures with 3D electrical connections and “bonding technology” for making wafer level packages. Electrode technology is essential for achieving more sophisticated functions and smaller size opto-semiconductors. Electrode technology involves techniques for forming Si through-hole electrodes to extract electrodes from the backside of devices and flip-chip bonding to make electrical connections between different materials. Bonding technology includes anodic bonding and room-temperature bonding that need no adhesives and that apply direct sealing on devices to achieve ultra-small packages.
3D mount technology
Hamamatsu is developing highly functional opto-semiconductors using a wide range of MEMS technologies.
V groove formed by anisotropic etching
Actuators formed by sacrificial layer etching (bulk micromaching)
20 μm pitch indium bump electrodes
MEMS technologies
10
Nanoimprint
Ceramic Surface mount type ceramicTO-CAN metal Rectangular metal
Mounting/packaging technologies
Shingai factory (Assembly factory)Mitsue factory (Assembly factory)
Gold bumps are formed on wafers.
Bump forming
Wafers are cut by a spinning blade.
Blade dicing
A laser cuts a wafer by irradiating the interior ofthe wafer.
Stealth dicing
Dicing
Metal package
Ceramic package
Plastic package
Chip size package
Assembly process [Typical process]
Chips are bonded to metal bases.
Die bonding
Chips are bonded to ceramic bases.
Die bonding
Chips are bonded to lead frames.
Die bonding
Dicing
Blade dicing
Stealth dicing
or
11
Manufacturing technologies
Hamamatsu offers a variety of package types to meet diverse market needs. For example, metal packages are widely used in applications requiring high reliability. Ceramic packages are used in general applications. Plastic packages are suitable for high-volume applications where lower cost is essential. Special packages include rectangular metal packages designed for use with thermoelectrically-cooled CCD area image sensors. Many different types of surface mount packages are also available. COB (chip on board) devices and thin plastic package devices are ideal especially for applications where small, thin devices are needed. What's more, photodiode/scintillator combination devices are available that detect X-rays or radiation by converting them into visible light.
Chip size packageGlass epoxy board
With scintillator With flexible cable
Plastic Long and narrow type
TSV (through silicon via) technology
Cross section example of TSV
Glass
Photodiode, IC chip
Solder bumpTSVWiring
Insulatingfilm
Chips are connected to metal bases using gold wires.
Wire-bonding
Chips are connected to ceramic bases using gold wires.
Wire-bonding
Chips are connected to lead frames using gold wires.
Wire-bonding
Chips with bumps are bonded to substrates by being flipped (inverted).
Flip chip bonding
Metal caps are welded to metal bases.
Cap sealing
Resin is injected into ceramic bases.
Resin encapsulation
Resin is molded along lead frames and chips.
Resin molding and trimming
The space between the substrate and chip is filled in with resin.
Underfill filling
Test
12
Electrical & optical characteristics are tested.
Metal package test equipment
Appearance inspection
Electrical & optical test
Plastic package test equipment
The appearances of finished products are inspected.
Appearance inspection system
X-ray & appearance inspection system
13
S i P H O T O D I O D E S[Si photodiodes]Product lineup for wide-ranging applicationsSi photodiodes are used in various applications covering optical fi ber communications, copiers, analytical instruments and baggage inspection, and are available in various packages including metal, ceramic and plastic packages, as well as surface mount packages.
1 Si photodiode
4 Si photodiode with preamp
2 Si PIN photodiode
5 TE-cooled typeSi photodiode
3 Multi-element type Si photodiode
6 Si photodiode for X-ray
Spectral response (typical example)
S1226/S1336-8BQ, S1227/S1337-1010BR S3590-19, S3759, S9219
2000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1200300 400 500 600 700
Wavelength (nm)
Phot
osen
sitiv
ity (
A/W
)
800 900 1000 1100
(Typ. Ta=25 ºC)
S1336-8BQ(For UV to NIR)
S1337-1010BR(For UV to NIR)
S1227-1010BR(IR sensitivity suppressed)
S1226-8BQ(IR sensitivity suppressed)
QE=100%
2000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1200300 400 500 600 700
Wavelength (nm)
Phot
osen
sitiv
ity (
A/W
)
800 900 1000 1100
(Typ. Ta=25 ºC)
S3759 (for YAG laser)
S3590-19(high violet sensitivity)
QE=100%
S9219(visible-sensitive compensated)
KSPDB0300EC KSPDB0301EC
Features Major applications
Excellent linearity with respect to incident light
Low noise
Wide spectral response range
Mechanically rugged
Compact and lightweight
Long life
Analytical instrument
General photometry
Baggage inspection
Optical fi ber communications
14
S i P H O T O D I O D E S
Product lineup
To make our photodiodes easier to use, we offer a variety of modules.
Photodiode module
Product name Product examples
1 Si photodiode
For UV to near IR range For visible to near IR range For visible range RGB color sensor For VUV (vacuum ultraviolet) detection For monochromatic light detection For electron beam detection
2 Si PIN photodiode
Cutoff frequency: 1 GHz or more Cutoff frequency: 500 MHz to less than 1 GHz Cutoff frequency: 100 MHz to less than 500 MHz Cutoff frequency: 10 MHz to less than 100 MHz IR-enhanced type For YAG laser detection
3 Multi-element type Si photodiode Segmented type photodiode One-dimensional, two-dimensional photodiode array
4 Si photodiode with preamp5 TE-cooled type Si photodiode
For analytical instrument and precision measurement
6 Si photodiode for X-ray With scintillator Large photosensitive area type
Product name Features
Photodiode moduleThese modules are high-precision photodetectors integrating a Si photodiode or InGaAs photodiode with a current-to-voltage conversion amplifi er into a compact case. Dedicated controller is also provided (sold separately).
Photosenser amplifi erPhotosensor amplifi ers are current-to-voltage conversion amplifi ers used to amplify very slight photocurrent from a photodiode with very low noise.
0.8
0.6
0.4
0.2
0200 800 1000600400
Wavelength (nm)
1200
Phot
osen
sitiv
ity (
A/W
)
(Typ. Ta=25 °C)
IR-enhancedSi PIN photodiodeS11499 series
Previous type
QE=100%
KPINB0374EC
■ Spectral response example
CT O P ISi PIN photodiodes with enhanced near-infrared sensitivity made by MEMS technology
IR-enhanced Si PIN photodiode
These Si PIN photodiodes offer high sensitivity in the near infrared region via MEMS technology. They have both high-speed response and high sensi-tivity in the near infrared region which have been difficult to achieve up to now by conventional methods.
15
S i A V A L A N C H E P H O T O D I O D E S[Si APD]High-speed, high-sensitivity photodiodes with an internal gain mechanismAPD (avalanche photodiodes) are high-speed, high-sensitivity photodiodes that internally amplify photocurrent by the application of a reverse voltage.Delivers a higher S/N than PIN photodiodes and is widely used in optical rangefi nders, FSO (free space optics), scintillation detectors, etc.
1 Short wavelength type 2 Near infrared type
Features Major applications
Excellent linearity with respect to incident light
Low noise
Wide spectral response range
Mechanically rugged
Compact and lightweight
Long life
Low-light-level detection
Analytical instrument
FSO
Optical rangefi nder
Optical fi ber communications
Laser radar
YAG laser detection
Wavelength (nm)
Phot
osen
sitiv
ity (
A/W
)
200 400
55
50
40
30
20
10
45
35
25
15
5
0600 800 1000 1200
Near infrared type(900 nm band, low terminal capacitance)
Near infrared type(low bias operation)
IR-enhanced type(1000 nm band/high sensitivity)
Near infrared type(low temperature coefficient)
Short wavelength type(low bias operation)
(Typ. Ta=25 °C, M=50, λ=650 nm)
Short wavelength type(low terminal capacitance)
KAPDB0096EG KAPDB0162ED
Spectral response Cutoff frequency vs. recommended wavelength
Wavelength (nm)
Cuto
ff f
requ
ency
(M
Hz)
2000
200
400
600
800
1000
400 600 800 1000 1200
High
Low
(Compared using devices with 0.5 mm photosensitive area)
Short wavelength type(low bias operation)
Short wavelength type(low terminal capacitance)
Near infrared type(low bias operation, lowtemperature coefficient)
Near infrared type(1000 nm band/high sensitivity)
Near infrared type(900 nm band, low terminal capacitance)
16
S i A V A L A N C H E P H O T O D I O D E S
Product lineup
These modules consist of an APD, low-noise amplifier, and
bias power supply integrated in a compact package.
APD modules
Type Recommended wavelength Package Features
1Short wavelength type
Low-bias operation 200 to 650 nm Metal
Enhanced sensitivity in the UV to visible range
Low terminalcapacitance
320 to 650 nmMetal,
ceramic
2Near infrared type
Low-bias operation 600 to 800 nm
MetalHigh sensitivity in near infrared region and low bias voltage operation
Surface mount type Low-cost, miniature and thin package
Low temperature coeffi cient
600 to 800 nm MetalEasy voltage adjustment due to low tem-perature coeffi cient of bias voltage
900 nm band, low terminal capacitance
800 to 1000 nm Metal Enhanced sensitivity in 900 nm band
1000 nm band/high sensitivity
900 to 1150 nm Metal Enhanced sensitivity in 1000 nm band
Response speed (Hz)
DC
Sens
itivi
ty (
V/W
)
100 10 k10 1 k 100 k 1 M 10 M 100 M 1 G103
104
105
106
107
108
109
DC to 100 kHz-1.5 × 108 V/W
50 kHz to 1 GHz2.5 × 105 V/W
4 types are available accordingto photosensitive area size and
wavelength range.4 kHz to 100 MHz
-1 × 104 V/W
DC to 10 MHz1.5 × 106 V/W
C12703-01
C12703
C5658
C12702 series
DC to 10 MHz2.5 × 106 to 1.25 × 107 V/W
C10508-01
KACCB0115EF
Sensitivity vs. response speed (APD modules)Type Features
Standard typeContains a near infrared or short wavelength type APD. FC/SMA fi ber adapters are also provided.
High-sensitivity type High gain type for detection under low illuminance
High-stability typeDigital temperature-compensation, high-stability APD module
High-speed typeOperates over a wide range of frequencies(up to 1 GHz)
17
M U L T I - P I X E L P H O T O N C O U N T E R S[MPPC®]Compact opto-semiconductors with excellent photon-counting capabilityThe MPPC (multi-pixel photon counter) is a new type of photon-counting device made up of multiple APD (avalanche photodiode) pixels operated in Geiger mode. The MPPC is essentially an opto-semiconductor device with excellent photon-counting capability and which also possesses great advantages such as low-voltage operation and insensitivity to magnetic fi elds.
Features Major applications
Excellent photon-counting capability
High gain: 105 to 106
Low-bias (below 100 V) operation
Insensitive to magnetic fi elds
Simple readout-circuit operation
Low afterpulse (compared to our previous products)
Excellent time resolution
Room temperature operation
Fluorescence analysis, fl uorescence lifetime measurement
Biological fl ow cytometry
Confocal microscopes
Biochemical sensors
Bioluminescence analysis
Single molecule detection
PET
Scintillation light detection
1 For precision measurment (single type)
2 MPPC array
3 MPPC module
What is the MPPC ?The MPPC is a kind of so-called Si-PM (silicon photomultiplier) device. It is a photon-counting device consisting of multiple APD pixels operating in Geiger mode. Each APD pixel of the MPPC outputs a pulse signal when it detects one photon. The signal output from the MPPC is the total sum of the outputs from all APD pixels. The MPPC offers the high performance needed in photon counting and is used in diverse applications for detecting- extremely weak light at the photon-counting level.
RR
18
M U L T I - P I X E L P H O T O N C O U N T E R S
Product lineup
Type Features
1For precision measurement (single type)
These are low-noise MPPCs for precision photometry. They feature high photon detection ef-fi ciency, low crosstalk, and low afterpulse. They are suitable for precision measurement, such as fl ow cytometry, DNA sequencer, laser microscope, and fl uorescence measurement, that requires low noise characteristics.They are available in two types: ceramic package and surface mount.
2 MPPC arrayThese are MPPCs with several MPPC chips arranged in an array. The CSP (Chip Size Package) type MPPCs can be tiled together to fabricate large-area devices and can be coupled effi ciently to scintillators or the like.
3 MPPC module
MPPC modules are optical measurement modules with built-in MPPC. They can measure light over a wide range (10 orders of magnitude) from the photon counting region to nW (nanowatt) region. They are available in two types: non-cooled modules, which are equipped with a tem-perature compensation function for stable measurement, and cooled modules, which feature low dark count.
Measurable light level ranges of MPPC modules (product examples)
KACCC0769EA
100 102 104 106 108 1010 1012
10-18 10-15 10-9 10-610-12
(λ=450 nm)
Analog output
type
Number of incident photons (cps)
Incident light level (W)
Digital output
type
Non-cooled type/50 μm pitch
Non-cooled type/10 μm pitch
TE-cooled type/50 μm pitch
TE-cooled type/50 μm
TE-cooled type/single pixel (fiber coupling type)
19
Features Major applications
P H O T O I C[Photo IC]Highly functional devices integrating photodiodes with signal processing circuitsThe photo IC is a light receiver element with various functions. It integrates a photosensitive element and a signal process-ing circuit into one package.
1 Schmitt trigger circuit photo IC
6 Photo IC for encoder,Encoder module
7 Photo IC for optical switch
9 Phototransistor
8 Photo IC forlaser beamsynchronousdetection
4 Color sensor
5 Photo IC for optical link
2 Light modulation photo IC 3 Illuminance sensor
Small and lightweight
Highly resistant to noise from electromagnetic induction
High reliability
Offers custom designs for producing optical
sensors to meet specifi c applications.
Merges IC design technology, CMOS circuit
technology, optical device technology, and
packaging technology.
Allows the fabrication of subminiature de-
vices that integrate multiple functions.
Paper detection in offi ce machines (copier, fax machines, etc.)
Optical switch
Light dimmers for liquid crystal panels and large-screen TV, etc.
Color adjustment for display
Plastic optical fi ber communications
Encoder
HAMAMATSU photo IC technology
Simplified external circuitreduces the total cost.
External circuit Minimum hardware Minimum software
Minimizes digital noise.
Responds to sophisticated needs. Delivers high linearity, low noise, and wide dynamic range.
Makes it easy to use photo IC. Simplifies externalinput/output terminals.
Provides spectral responsecharacteristics, etc. optimizedfor specific needs.
Interface
A/D converterAnalog signalprocessing circuit
Digital signalprocessing
circuit
Photosensor
Photo IC
20
P H O T O I C
Product lineup
DigitalUses a 4-element photodiode that can be used to easily confi g-ure an encoder with 2-phase digital output
6Photo IC for encoder,Encoder module
Type Output Features
Digital
Digital
Analog/Digital
Digital
Digital (receiver photo IC)
Digital
Digital
Analog
Photo IC integrates a photodiode, amplifi er, Schmitt trigger cir-cuit and output transistor, etc. into one chip
Employs synchronous optical detection to ensure stable output even under fl uctuating background light
Has spectral response characteristics close to human visual sensitivity
Has sensitivity to red, green and blue light
Photo IC transmitters and receivers for plastic optical fi ber com-munications
Has functions needed for industrial optical switches
For detecting laser beam print-start timing in laser printers and digital copiers
Amplifi es the photocurrent generated by input light. Allows a larger current to be drawn even from a small active area when compared to photodiodes.
Hamamatsu photo ICs are widely used for many different needs.
1Schmitt trigger circuit photo IC
2 Light modulation photo IC
3 Illuminance sensor
4 Color sensor
5Photo IC for optical link (POF)
7 Photo IC for optical switch
8Photo IC for laser beamsynchronous detection
9 Phototransistor
Photo IC forgeneral use
Photo IC forspecial use
Application examples
Air conditioner: light/dark sensing
Station ticket gate: passenger sensing
Illuminance sensor (Photo IC diode)
Clocks: light/dark sensing
Illuminance sensor (Photo IC diode)
Light modulation photo IC
Factories
Detection of product passage
Light modulation photo IC,Photo IC for optical switch
Safety devices
Light modulation photo IC,Photo IC for optical switch
Digital copiers /Multifunctional digital office machines
Paper size detection
Light modulation photo IC
Laser origin point detection for writing on print drum
Photo IC for laser beam synchronous detection
Signal transmissionTransmitter/Receiver photo IC for optical link
Remaining paper amount detection
Light modulation photo IC
Display backlight brightness adjustment
Illuminance sensor (Photo IC diode)
Mirror and lens positioning
Photo IC for encoder/Encoder module
Color toner contrast detection
Digital color sensor
Sorter leftover paper detection
Light modulation photo IC
Illuminance sensor (Photo IC diode)
Illuminance sensor (Photo IC diode)
Vending machine: light/dark sensing
Large screen TV: light/dark sensing
Illuminance sensor (Photo IC diode)
Illuminance sensor (Photo IC diode)
Auto lighting equipment: light/dark sensing Auto hand washer: hand sensing
Boiler: flame monitor
Light modulation photo IC
0.1 eV
InGaAs linear imagesensor (long wavelength type)
1 eV10 eV100 eV1 keV10 keV100 keV
0.01 nm 0.1 nm 1 nm 10 nm 100 nm 1 μm 10 μm
1 MeV
InGaAs linear/areaimage sensor
NMOS linearimage sensor
CMOS linearimage sensor
CMOS areaimage sensor
Distance image sensor
Back-thinned CCD
Photon energy
Wavelength
Front-illuminated CCDFront-illuminated CCD (windowless type)
NMOS linear image sensor(windowless type)
CCD for X-ray imaging
Back-thinned CCD (windowless type)
Flat panel sensor
Wavelength [nm] =1240
Photon energy [eV]
21
Features Major applications
Example of detectable energy level and spectral response range
I M A G E S E N S O R S[Image sensors]A wide lineup of image sensors suitable for spectroscopy and measurement applicationsHamamatsu provides various types of image sensors that cover a wide energy level and spectral response range from near infrared (NIR) at 2.6 μm through visible, ultraviolet, vacuum ultraviolet (VUV) down to soft X-rays and hard X-rays at several hundred keV.
1 Front-illuminated CCD area/linear image sensor2 Back-thinned CCD area/linear image sensor
3 NMOS linear image sensor
7 Photodiode array with amplifi er 8 X-ray image sensor
4 CMOS linear/areaimage sensor
5 Distance linear/area image sensor 6 InGaAs linear/area image sensor
A wide lineup covering different wavelengths
KMPDC0105EH
Spectrophotometry
Scientifi c measurement
NIR spectrometry
X-ray imaging
Obstacle detection
Security
22
I M A G E S E N S O R S
Product lineup
Spectral response (typical example)
KMPDB0276EB
Qua
ntum
eff
icie
ncy
(%)
Wavelength (nm)
(Typ. Ta=25 °C)
0200 400 600 800 1000 1200
10
20
30
40
50
60
70
80
90
100
Back-thinnedtype
Front-illuminated type
Front-illuminated type(NIR high sensitivity)
Back-thinned type(UV high sensitivity)
Wavelength (μm)
Phot
osen
sitiv
ity (
A/W
)
0.5 1.0 1.5 2.0 2.5 3.00
0.5
1.0
1.5(Typ.)
G9201 to G9204/G9211 to G9214/G9494 series
G9206-256W G9207-256W
G9205-256WG9208-256W
G11135/G11620 series
Td=25 °CTd=-10 °CTd=-20 °C
KMIRB0068EC
CCD area image sensor (without window) InGaAs linear image sensor
Product name Features Lineup
1Front-illuminatedCCD area/linear image sensor
Image sensors with low dark current and low noise.
For spectrophotometry For scientifi c measurement
2Back-thinnedCCD area/linear image sensor
Image sensors delivering high quantum effi ciency from visible to VUV region
For spectrophotometry For scientifi c measurement TDI-CCD area image sensor Fully-depleted back-illuminated CCD area image sensor
3 NMOS linear image sensorImage sensors with high UV-sensitivity and excel-lent output linearity, making them suitable for pre-cision photometry
Current output type (standard type) Current output type (infrared-enhanced type) Voltage output type
4 CMOS linear/area image sensor
Image sensors integrated with signal process-ing circuits, making them suitable for applications where low power consumption and downsizing of the detector unit are essential
Variable integration time type High-speed readout type High sensitivity type Digital output type SXGA/VGA format type
5 Distance linear/area image sensorImage sensors designed to measure the distance to an object by TOF method.
Distance linear image sensor Distance area image sensor
6 InGaAs linear/area image sensorImage sensors for near infrared region. Built-in CMOS IC allows easy operation.
For NIR spectrometry For DWDM monitor For NIR image detection
7 Photodiode array with amplifi erSensors combining a Si photodiode array and a signal processing IC. A long, narrow image sensor can also be confi gured by arranging multiple arrays in a row.
Long and narrow area type For non-destructive inspection
8 X-ray image sensorImage sensors and photodiode arrays delivering high quality X-ray images by coupling FOS (FOP coated with X-ray scintillator) or phosphor sheet.
CCD/CMOS area image sensors for dental imaging
TDI-CCD area image sensors Photodiode arrays with amplifi er for non-destructive inspection
Near-infrared imaging of color-painted wooden air-plane toy makes visible the cracks, traces of resin, and characters underneath the paint layer, etc.
Visible NIR
CT O P IInGaAs area image sensor (640 × 512 pixels) for easily capturing a near infrared image
The InGaAs area image sensor is a sensor for easily capturing a near
infrared image. An InGaAs photodiode chip is connected with ROIC,
and then each channel is readout from a shift-register. The ROIC
incorporates a timing generator, so video output can be obtained by
simple digital input.
23
Major applications
Product lineup
Type Pixel size(μm)
Active area[(H) × (V) cm]
Frame rate (frames/s) Features
100 12 × 12 17 to 280
100 10 × 7 30 to 265High-speed, high-sensitivity type suitable for CT imaging and panoramic imaging.Supplied without case for assembly into equipment.
100 15 × 0.6 300
505 × 5 to 12 × 12
1 to 4Suitable for imaging of low-energy X-rays and com-patible with X-ray sources with 17 keV Mo target
505 × 5 to 12 × 12
3Active pixel sensor for low-noise readout and com-patible with X-ray below 18 keV
F L A T P A N E L S E N S O R S[Flat panel sensors]Capturing high-resolution, high-quality X-ray images in real-timeFlat panel sensors are digital X-ray image sensors capable of acquiring high-resolution, high-quality X-ray images in real-time. A fl at panel sensor is made up of a sensor board and a control board, designed for a thin, compact confi guration.
CT imaging/panoramic imaging, biochemical imaging, etc.
Radiography
X-ray diffraction
Non-destructive inspection
1For radiography (rotational type)
2For radiography (biochemical imaging)
3For radiography (X-ray diffraction)
2 For radiography (biochemical imaging) 3 For radiography (X-ray diffraction)
1 For radiography (rotational type)
24
Product lineup
Type Lineup
Visible light cut-off type suitable for detection of near infrared light
High IR-sensitivity
Suitable for detection of microscopic spot light such as from a laser diode
Long, narrow type with active area length of 30 mm or more
High-speed response, low dark current, superior position-detection characteristic
Excellent position resolution
Wide spectral response range
High-speed response
Simultaneously detects light intensity and center-of-gravity position
of a spot light
High reliability
Position and angle sensing
Distortion and vibration measurements
Optical rangefi nders
Optical switches
Precise position measurements such as laser
displacement meters
1 One-dimensional PSD
2 Two-dimensional PSD
P O S I T I O N S E N S I T I V E D E T E C T O R S[PSD (position sensitive detectors)]Light spot position sensors used for distance and angle measurementsA PSD is a non-discrete type position photosensor that makes use of photodiode surface resistance. It provides position data as a continuous electrical signal and offers high position resolution, high-speed response, and high reliability.
1 One-dimensional PSD 2 Two-dimensional PSD
Features Major applications
25
I N F R A R E D D E T E C T O R S[Infrared detectors]Product lineup to meet various needs for spectral response rangeInfrared detectors are utilized in a wide range of fi elds such as measurement, chemical analysis, industry, agriculture, medicine, physics and chemistry, communications, and aerospace applications.
KIRDB0259EG
1 InGaAs PIN photodiode
5 Two-color detector
4 Thermopile detector
6 Photon drag detector
2 PbS/PbSe
photoconductive
detector
3 InSb photoconductive detector/photovoltaic detector,
InAsSb/InAs photovoltaic detector,
MCT (HgCdTe) photoconductive detector/photovoltaic detector
■ Spectral response (typical example)
Wavelength (μm)
D*
(cm
· H
z1/2/W
)
108
109
1010
1011
1012
1013
1014
1 2 30 4 5 6 7 8 9 17 18 19 20 21 22 23 24 2510 11 12 13 14 15 16
MCT (-60 °C)
PbSe (-20 °C)
InAsSb (-30 °C)
InSb (-196 °C)
PbSe (25 °C)
MCT (-196 °C)
PbS (-20 °C)
PbS (25 °C)
Si (25 °C)
MCT (-196 °C) MCT (-196 °C)
Thermopile
InAs (-196 °C)
InAsSb (-196 °C)
Short wavelength enhanced type InGaAs (25 °C)
Long wavelength type InGaAs (-196 °C)
Long wavelength type InGaAs (25 °C)
Photovoltaic detectorsPhotoconductive detectorsSi thermal detectors
InAsSb for 8 μm Band (-30 ˚C)
26
Product name Spectral response range Features Major application
1 InGaAs PIN photodiode
0.5 to 1.7 μm High-speed response Various types of active areas, arrays and packages available TE-cooled type available
Optical fi ber communications Optical power meter Gas analyzer Water content analyzer NIR (near infrared) photometry
0.9 to 1.7 μm
0.9 to 1.9 μm
0.9 to 2.1 μm
0.9 to 2.6 μm
2 PbS photoconductive detector 1 to 3.2 μm
High detectivity Can be used at room temperatures in a wide range of applications such as radiation ther-mometers and fl ame monitors
Radiation thermometer Flame monitors Water content analyzer Food ingredient analysis Spectrophotometers
2 PbSe photoconductive detector 1 to 5.2 μm
Detects wavelengths up to 5.2 μm Offers higher response speed at room tempera-tures compared to other detectors used in the same wavelength range. Suitable for a wide range of applications such as gas analyzers.
Radiation thermometer Flame monitors Gas analyzer Film thickness gauge
3 InSb photoconductive detector 1 to 6.7 μm Detects wavelengths up to around 6.5 μm, with high sensitivity over long periods due to thermoelectric cooling
Environment measurements(gas analysis, etc.) Radiation thermometer (5 μm band) FTIR IR laser detection
3 InSb photovoltaic detector 1 to 5.5 μm
Suitable for CO2 and SOx (SO, SO2, SO3) gas analysis due to high sensitivity in the 3 to 5 μm band
Covers a spectral response range close to PbSe but offers higher response speed
Radiation thermometer Thermal imaging Remote sensing Gas analyzer FTIR Spectrophotometers3 InAsSb photovoltaic detector 1 to 8.3 μm
Infrared detector in the 5 μm or 8 μm spec-tral band, with high sensitivity and high reli-ability
3 InAs photovoltaic detector 1 to 3.8 μm Covers a spectral response range close to PbS but offers higher response speed
Gas analyzer Infrared radiation measurement Infrared spectrophotometry FTIR
3MCT (HgCdTe) photoconductivedetector
1 to 25 μm
Different types of spectral response ranges are provided by changing the composition ratio of HgTe and CdTe.
Available with thermoelectric coolers, cryo-genic dewars
Thermal imaging Remote sensing
FTIR CO2 laser detection Spectrophotometers
3MCT (HgCdTe) photovoltaic detector
1 to 13.5 μm High-speed response Low noise
FTIR Thermal camera Radiation thermometer Spectrophotometers Environmental measurement Astronomy and space observation
4 Thermopile detector 1 to 25 μm Sensors that generate thermoelectromotive force in proportion to the energy level of incident light
Gas analysis CO2 concentration measurement
5Two-colordetector
Si + PbS 0.2 to 3 μm Wide spectral response range from UV to IR Two-color detectors incorporate an infrared-trans-mitting Si photodiode mounted over a PbS detec-tor, PbSe detector or InGaAs PIN photodiode
Spectrophotometers Laser monitors Flame monitors Radiation thermometer
Si + PbSe 0.2 to 4.85 μm
Si + InGaAs 0.32 to 2.55 μm
InGaAs + InGaAs 0.9 to 2.55 μm A sensor made of two vertically stacked InGaAs PIN photodiodes with different spectral ranges
6 Photon drag detector 10 μm
High-speed detectors with high sensitivity in 10 μm band (for CO2 laser detection)
Room temperature operation with high- speed response
CO2 laser detection Infrared detection
Product lineupI N F R A R E D D E T E C T O R S
27
Major applications
Product lineup
Type Features
Si photodiode with a fi lter that corrects the spectral range to have sensitivity only in the visible range
Photo ICs with spectral response characteristics close to human visual sensitivity
Compound semiconductor photosensor that delivers spectral sensitivity close to the human eye without using any fi lters
Exposure meter, illuminometer
Cellular phone backlight dimmer
Energy-saving sensor for large-screen TV, etc.
Light dimmers for liquid crystal panels
Automatic lighting system
Various types of light level measurement
2 Si photodiode
1 Illuminance sensor
3 GaAsP photodiode
V I S I B L E L I G H T S E N S O R S[Visible light sensors]Spectral response close to that of the human eyeVisible light sensors are broadly used as illuminance sensors.
2 Si photodiode 3 GaAsP photodiode
1 Illuminance sensor
0.1
0.2
0.3
0.4
0.5
0.7
0.9
0.6
0.8
1.0
0200 400 600 800
Wavelength (nm)
1000 1200
Rela
tive
sens
itivi
ty
(Typ. Ta=25 °C, VR=5 V)
Human eye sensitivity
KPICB0121EA
■ Spectral response example (photo IC diode)
28
Major applications
Product lineup
Type Features
These are color sensors designed to respectively detect monochromatic colors of blue (λp=460 nm), green (λp=540 nm) and red (λp=660 nm).
These are color sensors molded into a plastic package having a 3-channel (RGB) photodiode sen-sitive to the blue, green and red regions of the spectrum.
These are color sensors sensitive to red, green, and blue light.Detected signals are output serially as digital data.
These modules are used for monitoring of LCD backlight colors and for simple color detection.
White balance adjustment
Color control, color identifi cation
Portable or mobile equipment
RGB-LCD backlight monitors
Light source color temperature detection
Various types of color detection
1 Si photodiode
2 RGB color photodiode
3 Digital color sensor
4 Color sensor module
C O L O R S E N S O R S[Color sensors]Small sensor for LCD monitoring and simple color detectionHamamatsu provides single-color sensors that are sensitive to red, green and blue light, as well as RGB color sensors.
1 Si photodiode 2 RGB color photodiode
3 Digital color sensor
4 Color sensor module
Wavelength (nm)
Phot
osen
sitiv
ity (
A/W
)
400 7006003000
0.10
0.20
0.05
0.15
0.25
500 800
(Typ. Ta=25 °C)
Green
Red
Blue
KSPDB0246EA
■ Spectral response example (RGB color photodiode)
29
Product lineup
L I G H T E M I T T I N G D I O D E S[LED]Infrared LED and red LED with high outputCompared to laser diodes, LEDs offer advantages such as lower cost and longer life. Hamamatsu has developed and produced various types of LEDs that enhance emission effi ciency via a high output power LED chip mounted on a refl ective package base, which makes the light emitted from the chip edges refl ect towards the front.
5 For FSO (free space optics)
1 For optical switch
6 For optical link 7 SIP type 8 Bullet type
3 For moisture detection
4 CO2 detection
2 For optical encoder
High output
Available in various types of packages
Optical switch
Encoder
Light source for moisture meter
Optical rangefi nder
Optical fi ber communications
FSO
Features Major applications
Type Features
1 For optical switchInfrared
Refl ector type High output power
Ball-lens type Narrow directivity, uniform emission pattern
Peripheral electrode type Shadow of wire does not appear in emission pattern.
Red Refl ector type High output power
2 For optical encoderOptimized lens shape allows these LEDs to emit highly collimated beams.High reliability is obtained since these LEDs do not use a current confi nement structure chip.
3 For moisture detection Long wavelength LED with peak emission wavelengths at 1.45 μm
4 CO2 detection Middle infrared LED with peak emission wavelength at 4.3 μm
5 For FSOHigh-speed, high output power LED.Transmitter/receiver module for VICS (Vehicle Information and Communication System) is also available.
6 For optical link These LEDs are suitable for 50 Mbps and 125 Mbps optical link.
7 SIP type These LEDs are high-power LEDs molded into a miniature, clear plastic package.
8 Bullet type These LEDs are high-power LEDs encapsulated in a bullet-shaped package.
30
Product lineup
Type Features
High-speed photodiodes available in a variety of packages (ROSA, metal, receptacle, pigtail).
Hamamatsu provides large area photodiodes and high-power LEDs, as well as a light emitter/receiver module designed for vehicle-mounted VICS (Vehicle Information and Communication System).
These devices are used to monitor laser diodes or DWDM.
These are light receivers and emitters suitable for medium to low speed optical links.
1For high-speed optical fi ber communications
2 For optical data link
3 For FSO
4For optical power and wavelength monitor
O P T I C A L C O M M U N I C A T I O N D E V I C E S[Optical communication devices]High-speed devices for optical fi ber communications and FSO (free space optics)Hamamatsu provides high-quality receiver/transmitter devices designed for long-range, high-speed communications and short-range, low-speed communications, as well as FSO.
1 For high-speed optical fi ber communications
2 For optical data link
3 For FSO 4 For optical power and wavelength monitor
31
M I N I - S P E C T R O M E T E R S[Mini-spectrometers]Integrating an optical system, image sensor and circuitHamamatsu offers a full line of mini-spectrometers that are integrated with an optical system, image sensor, and circuit by fabricating the grating section using micromachining techniques.
Features
Evaluation of light source characteristics
Taste analyzers
Water content measurement
Film thickness measurement
Semiconductor process control
Low-light-level measurement such as fl uorescence
measurement
Installation into measurement equipment
2 TM series 3 RC series 5 MS series
High throughput due to transmission grating made of quartz
Highly accurate optical characteristics
No external power supply required:
Uses USB bus power (Non-cooled type, excluding CCD type)
Low noise (Cooled type)
Compact design for easy assembly
Contains a wavelength conversion factor
(Data supplied only with OEM models)
1 TG series
4 FT series
Major applications
Micro-spectrometer
CT O P IUltra-compact (fi nger-tip size) spectrometer head integrating MEMS and image sensor technologies
Micro-spectrometers are ultra-compact spectrometer heads developed based on our MEMS and image sen-
sor technologies. The adoption of a newly designed optical system has achieved a remarkably small size,
less than half the volume of the previous mini-spectrometer MS series (C10988MA-01). This product is suit-
able for integration into a variety of devices, such as integration into printers and hand-held color monitor-
ing devices that require color management. It is also suitable for applications that collaborate with portable
devices, such as smartphones and tablets.
32
USBcable
Optical fiber forlight input
PC
Mini-spectrometer
Quartz cell
Light source
Light to be measured is guided into the entrance port through an optical
fi ber and the spectrum measured with the built-in image sensor is output
through the USB port to a PC for data acquisition. There are no moving
parts inside the unit so stable measurements are obtained at all times. An
optical fi ber that guides light input from external sources allows a fl exible
measurement setup.
Connection example (transmission light measurement)
KACCC0524EA
M I N I - S P E C T R O M E T E R S
Product lineup
Series TypeSpectral response
rangeSpectral resolution
Max.Internal image sensor
1 TG series
High sensitivity C9404CA200 to 400 nm
3 nm Back-thinned typeCCD image sensorHigh resolution C9404CAH 1 nm*
IR-enhanced C9405CB 500 to 1100 nm5 nm
(550 to 900 nm)IR-enhanced back-thinned
CCD image sensor
High resolution C11713CA 500 to 600 nm0.3 nm*
Back-thinned typeCCD image sensor
High resolution C11714CB 790 to 920 nmIR-enhanced back-thinned
CCD image sensor
Near IR C11482GA900 to 1700 nm
7 nm
InGaAslinear image sensor
Near IR (cooled) C9913GC 7 nm
Near IR (cooled) C9914GB 1100 to 2200 nm 8 nm
Near IR (cooled) C11118GA 900 to 2550 nm 20 nm
2 TM series
High sensitivity C10082CA
200 to 800 nm
6 nm Back-thinned typeCCD image sensorHigh resolution C10082CAH 1 nm*
Wide dynamic range C10082MD 6 nmCMOS
linear image sensor
High sensitivity C10083CA
320 to 1000 nm
8 nm(320 to 900 nm) Back-thinned type
CCD image sensorHigh resolution C10083CAH
1 nm*(320 to 900 nm)
Wide dynamic range C10083MD 8 nmCMOS
linear image sensor
Trigger-compatible C11697MB 8 nmHigh-sensitivity CMOSlinear image sensor
3 RC series
Compact C11007MA340 to 780 nm 9 nm
CMOSlinear image sensor
Compact (for installation in devices) C11009MA
Compact C11008MA640 to 1050 nm 8 nm
Compact (for installation in devices) C11010MA
4 FT series Compact, thin C13053MA 500 to 1100 nm 3.5 nmHigh sensitivity
CMOS linear image sensor
5 MS seriesUltra-compact (for installation in devices) C10988MA-01 340 to 750 nm 14 nm CMOS
linear image sensorUltra-compact (for installation in devices) C11708MA 640 to 1050 nm 20 nm
* Typ.
33
O P T O - S E M I C O N D U C T O R M O D U L E S[Opto-semiconductor modules]Modules using opto-semiconductors / Circuits for operating opto-semiconductorsHamamatsu provides a wide variety of opto-semiconductor modules developed by our own module technology capable of extracting the maximum performance from opto-semiconductors. Custom products are also available by request. Please feel free to consult us.
Technologies that create opto-semiconductor modules
9 Flame eye
1 MPPC module
5 Photodiode module6 Photosensor amplifi er
11 Sunlight sensor 13 Multichannel detector head
12 Infrared detector module with preamp
4 Mini-spectrometer
3 Radiation detector module
8 PSD signalprocessing circuit
7 PSD module
10 RGB color sensor module
2 APD module
14 Peripheral product for image sensor
Photodiode, image sensor,
etc. AmpPhotosensor
LEDLD
Light emitter
Driver
Signal processing(analog/digital)
Opto-semiconductor module configuration example
Opto-semiconductor
Opto-semiconductor
Optical components (filter, lens, etc.)
Interface
Housing
Circuitry
●Our mounting technology combines compactness, high functionality, and low cost.
Optical technology●Optimal optical design for high-performance modules●Use of simulations
●High-precision micromachining●Helps make modular components smaller and modules more functional
MEMS* technology
Opto-semiconductor technology
Software technology
●Optimized for optical devices and applications●Supports high sensitivity, low noise, high speed, and multiple channels
Circuit technology Mounting technology
* Micro-electro-mechanical systems
●The detector, which is the heart of module, uses Hamamatsu opto-semiconductor, which have a long
track record for many years in the fields of analysis, measurement, automobiles, and consumer products.●Custom designs are available to achieve the features you want.
●The sample software makes swift evaluation possible.●USB, RS-232C, and other types of
interfaces are available.
34
O P T O - S E M I C O N D U C T O R M O D U L E S
Product lineup
Products Features Application example
1 MPPC moduleMPPC modules are photon-counting modules that contain an MPPC capable of detecting extermely low-level light.
Fluorescence lifetime measurement Biological fl ow cytometry Bioluminescence analysis Low-light-level detection
2 APD moduleAPD modules are high-speed, high-sensitivity photodetectors us-ing an APD (avalanche photodiode).
Low-light-level detection Optical power meters Laser monitors
3 Radiation detector moduleThese modules incorporate a scintillator and MPPC and are designed to detect gamma-rays.
Environmental monitoring and mapping
Screening tasks
4 Mini-spectrometerThese compact spectrometers integrate an optical system, an image sensor, and a circuit.
Color monitoring Film thickness measurement Plastic sorting
5 Photodiode modulePhotodiode modules are high-precision photodetectors combining a photodiode and current-to-voltage conversion amp. Dedicated signal processing unit is also provided.
Precision photometry Light source power monitors Illuminometers, color difference meters
6 Photosensor amplifi erThese photosensor amplifi ers are current-to-voltage conver-sion amplifi ers for amplifying photocurrent with low noise.
Precision photometry Optical power meters Illuminometers
7 PSD modulePSD modules are high-precision position-detectors combining a PSD and current-to-voltage conversion amp. Dedicated signal processing unit is also provided.
Optical axis alignment Rangefi nder
3D measurement
8 PSD signal processing circuit These are signal processing circuits for evaluation of PSDs. Performance evaluation of PSD
9 Flame eyeThe fl ame eye is a sensor that monitors fl ames in oil boilers and heating equipment.
Flame detection in oil boilers and heaters
10 RGB color sensor module These modules have built-in RGB color sensor. RGB-LED backlight monitor for TFT-LCD
11 Sunlight sensorSunlight sensors detect the light level of sunlight and ambient light. A photodiode with superb linearity relative to the light level is built in a small case with a connector.
Ambient light detection Automatic lighting sensors
12 Infrared detector module with preamp These modules integrate an infrared detector and a preamp. Infrared detection
13 Multichannel detector head
Multichannel detector heads incorporate a driver circuit designed for various types of image sensors (CCD area image sensors, InGaAs linear image sensors, NMOS linear image sensors). Con-troller for multichannel detector head is also available.
Spectrophotometer Raman spectroscopy Semiconductor inspection Radiation thermometry
14Peripheral product forimage sensor
Driver circuit and pulse generator that are designed to match the CCD image sensor and CMOS/NMOS/InGaAs linear image sensor types are provided.
Multichannel spectrophotometry
CT O P ISubminiature, low power consumption MEMS mirrors
We provide miniature electromagnetic mirrors that incorporate our
unique MEMS technology. Within a magnetic fi eld generated by the
magnet, electrical current fl owing in the coil surrounding the mirror
produces a Lorentz force based on Fleming’s rule that drives the
mirror. Hamamatsu MEMS mirrors offer a wide optical deflection
angle and high mirror refl ectivity as well as low power consump-
tion.
Optical principle
Incidentlaser Force
Current
Current
ForceMagneticfieldMagnet
35
Factory/Research laboratory/Domestic sales office
Main factory (Ichino) Mitsue factory Shingai factory
Sendaisales office
Tokyo branch office
Tsukuba labolatoryTsukuba sales office
Osakasales officeNishinihon
sales office
Opto-semiconductors : Main factory (Ichino), Mitsue factory,Shingai factory
Electron tube products : Toyooka factory, Tenno glass works Beijing Hamamatsu photon techniques Ltd. (China)
System products : Joko factory Laser products : Miyakoda factory
Factories
Central research laboratory Tsukuba research laboratory Industries development laboratory
Laboratories
Tokyo sales office Osaka sales office Chubu sales office Sendai sales office Tsukuba sales office Nishinihon sales office
Domestic sales offices
Toyooka factory
Central researchlaboratory
Industriesdevelopmentlaboratory
Miyakoda factory
Joko factory
Tenno glassworks JR Tokaido line
JR TokaidoShinkansen line
Tenryu Riverthe Sea of Enshu
Lake Sanaru Hamamatsustation
LakeHamana
Tomei express way
Hamamatsu IC
Hamamatsu nishi IC
Mikkabi IC
Main factory(Ichino)
Shingaifactory
Mitsuefactory
HeadquartersChubu sales office
Hamamatsu
Annual sales
3513979235
2654461518
4000090732
3675180937
4329892583
Entire company
Solid state division
2011
2013
2014
2009
2010
0 10000 20000 30000 40000 50000 800007000060000 90000 100000(million yen)
38137851082012
36
Organization chart of solid state division
Bussiness Promotion
General Affairs
Management
Administration
Quality Control
Development ModuleThe 2nd Develop. Group
CMOS integrated circuitThe 3rd, 5th Develop. Group
SoftwareThe 1st Develop. Group
LED, NIR photodiode, optical communication deviceThe 11th Dept.
Compound semiconductor wafer processCompound Process Group
Infrared detectorThe 2nd Dept.
The 1st Mfg.
Si photodiode, Si APD, PSD, MPPC, SSDThe 30th Dept.
Si photodiode for X-ray detectionThe 3rd Dept.The 2nd Mfg.
Photo IC, Si photodiode, PSD, LED (plastic package)The 36th Dept.The 3rd Mfg.
Mass product assemblyThe 1st Assembly GroupShingai Mfg.
Si wafer processProcess Production GroupSi Wafer Process
MEMS products, SLMThe 51st Dept.The 7th Mfg.
Linear image sensorThe 41st Dept.
Area image sensorThe 34th Dept.
Circuit for image sensorThe 46th Dept.
The 4th Mfg.
Equipment and machinery engineeringAssembly mgt Group
Equipment and machinery engineeringProcess mgt Group
Facility management and maintenanceFacility mgt Group
Production headquarter
Photosensor moduleThe 32nd Dept.
Light measurement module & unitThe 29th Dept.The 5th Mfg.
Flat panel sensorThe 45th Dept.
X-ray image sensorThe 44th Dept.The 6th Mfg.
Assembly, inspectionThe 1st Assembly Group
Production technology, equipment technologyProduction Technology GroupMitsue Mfg.
MEMS processMEMS Process Group
MEMS Develop. GroupMEMS
Main Products
Information in this catalogue isbelieved to be reliable. However,no responsibility is assumed forpossible inaccuracies or omissions.Specifications are subject tochange without notice. No patentrights are granted to any of thecircuits described herein.
© 2015 Hamamatsu Photonics K.K.
Quality, technology, and serviceare part of every product.
HAMAMATSU PHOTONICS K.K., Solid State Division1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, JapanTelephone: (81)53-434-3311, Fax: (81)53-434-5184
www.hamamatsu.com
Sales OfficesSales Offices
Cat. No. KOTH0001E15Mar. 2015 DNPrinted in Japan (2,500)
Japan:HAMAMATSU PHOTONICS K.K.325-6, Sunayama-cho, Naka-ku,Hamamatsu City, Shizuoka Pref. 430-8587, JapanTelephone: (81)53-452-2141, Fax: (81)53-456-7889E-mail: [email protected]
China:HAMAMATSU PHOTONICS (CHINA) Co., Ltd.Main Office1201 Tower B, Jiaming Center, 27 Dongsanhuan Beilu, Chaoyang District, 100020 Beijing, ChinaTelephone: (86)10-6586-6006, Fax: (86)10-6586-2866E-mail: [email protected]
Shanghai Branch4905 Wheelock Square, 1717 Nanjing Road West, Jingan District, 200040 Shanghai, ChinaTelephone: (86)21-6089-7018, Fax: (86)21-6089-7017
U.S.A.:HAMAMATSU CORPORATIONMain Office360 Foothill Road, Bridgewater, NJ 08807, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218E-mail: [email protected]
California Office2875 Moorpark Ave. San Jose, CA 95128, U.S.A.Telephone: (1)408-261-2022, Fax: (1)408-261-2522E-mail: [email protected]
Chicago Office4711 Golf Road, Suite 805, Skokie, IL 60076, U.S.A.Telephone: (1)847-725-6046, Fax: (1)847-825-2189E-mail: [email protected]
Boston Office20 Park Plaza, Suite 312, Boston, MA 02116, U.S.A.Telephone: (1)617-536-9900, Fax: (1)408-261-2522E-mail: [email protected]
United Kingdom:HAMAMATSU PHOTONICS UK LimitedMain Office2 Howard Court, 10 Tewin Road, Welwyn Garden City,Hertfordshire AL7 1BW, UKTelephone: (44)1707-294888, Fax: (44)1707-325777E-mail: [email protected]
South Africa Office:PO Box 1112, Buccleuch 2066, Johannesburg, South AfricaTelephone/Fax: (27)11-802-5505
France, Portugal, Belgium, Switzerland, Spain:HAMAMATSU PHOTONICS FRANCE S.A.R.L.Main Office19, Rue du Saule Trapu Parc du Moulin de Massy,91882 Massy Cedex, FranceTelephone: (33)1 69 53 71 00Fax: (33)1 69 53 71 10E-mail: [email protected]
Swiss OfficeDornacherplatz 7 4500 Solothurn, SwitzerlandTelephone: (41)32-625-60-60, Fax: (41)32-625-60-61E-mail: [email protected]
Belgian OfficeAxisparc Technology, rue Andre Dumont 7 1435Mont-Saint-Guibert, BelgiumTelephone: (32)10 45 63 34Fax: (32)10 45 63 67E-mail: [email protected]
Spanish OfficeC. Argenters, 4 edif 2 Parque Tecnológico del Vallés08290 Cerdanyola (Barcelona), SpainTelephone: (34)93 582 44 30Fax: (34)93 582 44 31E-mail: [email protected]
Germany, Denmark, The Netherlands, Poland:HAMAMATSU PHOTONICS DEUTSCHLAND GmbH.Main OfficeArzbergerstr. 10, D-82211 Herrsching am Ammersee, GermanyTelephone: (49)8152-375-0, Fax: (49)8152-265-8E-mail: [email protected]
Danish OfficeLautruphøj 1-3, DK-2750 Ballerup, DenmarkTelephone: (45)70-20-93-69, Fax: (45)44-20-99-10Email: [email protected]
Netherlands OfficeTelevisieweg 2, NL-1322 AC Almere, The NetherlandsTelephone: (31)36-5405384, Fax: (31)36-5244948E-mail: [email protected]
Poland Office02-525 Warsaw, 8 St. A. Boboli Str., PolandTelephone: (48)22-646-0016, Fax: (48)22-646-0018E-mail: [email protected]
North Europe and CIS:HAMAMATSU PHOTONICS NORDEN ABMain OfficeTorshamnsgatan 35 16440 Kista, SwedenTelephone: (46)8-509 031 00, Fax: (46)8-509 031 01E-mail: [email protected]
Russian Office11, Christoprudny Boulevard, Building 1, Office 114,101000, Moscow, RussiaTelephone: (7)495 258 85 18, Fax: (7)495 258 85 19E-mail: [email protected]
Italy:HAMAMATSU PHOTONICS ITALIA S.r.l.Main OfficeStrada della Moia, 1 int. 6, 20020 Arese (Milano), ItalyTelephone: (39)02-935-81-733, Fax: (39)02-935-81-741E-mail: [email protected]
Rome OfficeViale Cesare Pavese, 435, 00144 Roma, ItalyTelephone: (39)06-50513454, Fax: (39)06-50513460E-mail: [email protected]
Opto-semiconductorsSi photodiodesAPDMPPCPhoto ICImage sensorsPSDInfrared detectorsLEDOptical communication devicesAutomotive devicesX-ray flat panel sensorsMini-spectrometersOpto-semiconductor modules
Electron TubesPhotomultiplier TubesPhotomultiplier Tube ModulesMicrochannel PlatesImage IntensifiersXenon Lamps / Mercury Xenon LampsDeuterium LampsLight Source Applied ProductsLaser Applied ProductsMicrofocus X-ray SourcesX-ray Imaging Devices
Imaging and Processing SystemsCameras / Image Processing Measuring SystemsX-ray ProductsLife Science SystemsMedical SystemsSemiconductor Failure Analysis SystemsFPD / LED Characteristic Evaluation SystemsSpectroscopic and Optical Measurement Systems
Laser ProductsSemiconductor lasersApplied products of semiconductor lasersSolid state lasers
MPPC is the registered trademark of Hamamatsu Photonics K.K. (Japan, U.S.A, EU, Switzerland)
