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Optimization of Phase-Locked Loop Circuits via Geometric Programming
D. Colleran, C. Portmann, A. Hassibi, C. Crusius, S. S. Mohan, S. Boyd,
T. H. Lee, and M. Hershenson
Outline• Motivation
• Geometric programming (GP)
• GP compatible transistor models
• Clock generation PLL topology
• PLL design in GP form
• Silicon results
Simulation-based methodsW1 = 1W2 = 2
: :L8 = 1
Power = 1Gain = 500
� General purpose � Long design cycles� Needs circuit expert� Needs optim. expert
Geometric programming-based method
Numerical GPOptimization
Solver
Gain > 100BW > 10MHz
0.13µµµµm CMOS
M1.gm=f1(W,L,…)
: : :
M1.Cgs= fn(W,L,…)
Vdd
RLRL
M1 M2
Ib
Gain = f1(R,M1,Ib)
: : :
BW = fn(R,M1,Ib)
Outline• Motivation
• Geometric programming (GP)
• GP compatible transistor models
• Clock generation PLL topology
• PLL design in GP form
• Silicon results
Geometric programming
ααα nnxxcxxg ⋅⋅⋅= 21
21)( )0( >c
• A monomial function g(x) has the form
• A posynomial function f(x) is a sum of monomials
For example, 53
21
7.01 5.2)(
2xxxxxf += −
• Geometric program (GP) is
0 ,,1 1 ,,1 1)(
)( 0
≥≥≥≥============≤≤≤≤
xp...i(x)gm...ixf
xf
i
i tosubject minimize
GPs can be easily transformed into convex problem
Solving GP’sNew interior point methods for GP
• are extremely fast
• find globally optimal solution or provide proof of infeasibility
• are independent of starting point
For PLL synthesis: 40k optimization variables and 150k constraints takes ~90 minutes on 2GHz PC
Outline• Motivation
• Geometric programming (GP)
• GP compatible transistor models
• Clock generation PLL topology
• PLL design in GP form
• Silicon results
D
S
G ID
• Complex GP models can be developed including short-channel effects, finite output impedance, etc…, e.g.,
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GP electrical models
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GP models – Id vs. Vds, 0.18µµµµm
0.0
0.5
1.0
1.5
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Vds (V)
Id (m
A)
Placement and Routing• Symmetry Constraints• Mirroring Nets• Net Matching• Alignment• Capacitance
Constraints• Shielding• EM/IR drop
considerations• Dummy poly for
matching and STI
GP physical models
Posynomial expressions for
Width and height, e.g.,
AD, AS, PD & PS, e.g.,
Outline• Motivation
• Geometric programming (GP)
• GP compatible transistor models
• Clock generation PLL topology
• PLL design in GP form
• Silicon results
PLL topology
�Charge pump PLL with low–power programmable dividers (12 bit, >2GHz)
�Variables include device dimensions (W,L) and # of ring oscillator stages (S)
Charge pump topology
Example current mirror equalities
(monomial):
VCO topology
Example saturationmargin inequalities
(posynomial):
Outline• Motivation
• Geometric programming (GP)
• GP compatible transistor models
• Clock generation PLL topology
• PLL design in GP form
• Silicon results
Second-order PLL system-level equations, in monomial form
Power consumption (posynomial)
Accumulated jitter, Taj (posynomial)σσσσj
t0.5
κκκκ
Using Hajimiri’s phase noise model (JSSC 1998):
From McNeil (JSSC 1997):
Static phase error, Terr (posynomial)
Using Pelgrom’s mismatch model (JSSC 1989 ):D
S
G ID
Outline• Motivation
• Geometric programming (GP)
• GP compatible transistor models
• Clock generation PLL topology
• PLL design in GP form
• Silicon results
GP vs. Silicon – 0.18um PLL arrays
5.9
3.1
2.7
4.2
2.1
2.2
Tpj[ps]
81-135
250
400
1500
600-1600
1200-1900
Fvco[MHz]
9.69.73.03.016255
24.227.92.52.7483-66
12.014.32.83.228204
14.415.36.07.954103
8.07.57.38.862332
6.25.710.811.093501MeasGPMeasGP
Taj [ps]Power [mW]ΦΦΦΦe [ps]
Fref[MHz]
#
�Good agreement between GP and silicon meas.
GP vs. Silicon – 0.13um PLL arrays
12.7
4.6
4.1
4.3
3.2
5.4
Tpj[ps]
512
900-1050
192-384
1000-1400
500-1000
800-1600
Fvco[MHz]
6.74.76.110.13090-1055
43.544.98.5313.3220.56
6.96.711.111.743244
5.45.812.617.853203
13.113.9--13.24725-502
7.78.9--18.34050-1551MeasGPMeasGP
Taj [ps]Power [mW]ΦΦΦΦe [ps]
Fref[MHz]
#
�Good agreement between GP and silicon meas.
Acc. jitter vs. ∆∆∆∆Fvco trade-off analysis
020406080
100120140160
0 200 400 600 800 1000 1200 1400 1600
VCO frequency range (MHz)
Acc
. jitt
er (p
s)
Power vs. ∆∆∆∆Fvco trade-off analysis
0
5
10
15
20
25
30
35
0 200 400 600 800 1000 1200 1400 1600
VCO frequency range (MHz)
Po
wer
(mW
)
Automated design does not translate into performance degradation
0.0473.865.512449.730.0797.91251000-1400204
5
21
PLL#
8.1
16.040.1
Tpj,noise[ps]-[%Tvco/%Vdd]
0.081
0.0260.020
20
805
Fref[MHz]
1471000-2000
56.516019550
Taj,noise[ps]
Fvco[MHz]
Simulated 0.13µm, worst case PVT (FF, -40C or 125C) with 10% step on Vdd
Comparison to Literature• 0.10 %Tvco/%Vdd for 2.5V, 800-1400MHz PLL
(M. Mansuri, ISSCC 2003)• 0.08 %Tvco/%Vdd for 2.0V, 800-1330MHz PLL with voltage regulator
(V. Van Kaenel, JSSC 1998)Room temperature with 10% step on Vdd
Conclusions• First demonstration of fully-automated PLL
design, from specification to GDSII
• PLL design problem cast in GP form reduces design time from weeks to hours
• Measured 0.18 µµµµm and 0.13 µµµµm CMOS PLL arrays agree with GP predictions (e.g. 1.9 GHz, 11 mW PLL with 5.8 ps long-term jitter)
• Robust, systematic, and efficient PLL design