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Optimization of Conjugated-Polymer-Based
Bulk Heterojunctions
J.C. (Kees) HummelenMolecular Electronics
Materials Science Centre Plus
University of Groningen, The Netherlands
GCEP Solar Energy WorkshopOct. 18 – 18, 2004 Stanford University
GCEP2004
TCOSUBSTRATE
CPC BLENDAl
~ 20 nm ~ 500 nm
Introduction, Morphology, Mobilities, Improving Voc , Improving Isc,
- N.S.Sariciftci, A.J. Heeger, USPatents 1992/1993- G. Yu, J. Gao, J.C. Hummelen, F. Wudl, A.J. Heeger, Science 270, 1789-91 (1995)
- S. E. Shaheen, C. J. Brabec, F. Padinger, T. Fromherz, J. C. Hummelen, N. S. Sariciftci, Appl. Phys.Lett. 78, 841 (2001). GCEP2004
Opening the box of Pandora:from bilayer to mixture
p/n
-metal top electrode
transparent bottom electrodeglass
Light
DA
p:n
GCEP2004G. Yu, J. Gao, J.C. Hummelen, F. Wudl, A.J. Heeger, Science 270, 1789 (1995)
Basic processes in a PV cell
Light
e-
h+
excitonElectrode 1 Electrode 2
GCEP2004
Commonly used PPVs
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
MEH-PPV
MDMO-PPV(OC1C10PPV)
M
EH
DMO
M GCEP2004
The standard fullerene acceptor
O
O
PCBMMicrosoft
owerPoint Presentatio
A highly processable methanofullerene(50-80 weight % of the D:A blend!)
Available from Nano-C Inc. (Westwood, Mass)nano-c.com
GCEP2004
PCBM (PhCl) crystal structureO
O
Fullerene moieties at < 10 Å in THREE dimensionsSpheres: orientation always OK!
M.T. Rispens, A. Meetsma, R. Rittberger, C.J. Brabec, N.S. Sariciftci, J.C. Hummelen, Chem. Commun. 2116-2118 (2003) GCEP2004
O
O
Charge carrier mobility in PCBM
• (MDMO-PPV: holes µh = 5×10 -7 cm 2 /Vs)• PCBM: electrons µe = 2×10 -3 cm 2 /Vs
(C60 films: 8.10-2 cm2/Vs ; C60 single crystals: 0.5 cm2/Vs)Mobility measurements on PCBM films
Experimental and calculated (solid lines) J-V characteristics of ITO/PEDOT:PSS/PCBM/LiF/Al devices with thicknesses L=90 nm and 170 nm (symbols),using Vbi=1.4 eV and VRs=30 Ω
The device band diagram is indicated in the inset. The electron transport is described by SCLC,with an electron mobility µe=2.0 ⋅10-7 m2/Vs and a dielectric constant εr =3.9.
SCLC:
i.e. PCBM does 4000 times better than MDMO-PPV!
Average hopping distance in PCBM ~ 3 nm!
Mihailetchi, van Duren, Blom, Hummelen, Janssen, Kroon, Rispens, Verhees, Wienk, Adv. Funct. Mat. 13, 43-46 (2003) GCEP2004
20 30 40 50 60 70 80 90 10010-11
10-10
10-9
10-8
10-7
10-6
µe
µh
weight percentage PCBM [wt.-%]
µ [m
2 /Vs]
µh – pure MDMO-PPV
T=295K
Charge carrier mobility in blendO
O
MDMO-PPV
• enhanced intermolecular interaction by adding PCBM.
C. Melzer et al., Adv. Funct. Mat., (accepted)M. Kemerink et al., Nano Lett., 2003, 3, 1191
MDMO-PPV:PCBM
• electron mobility increases due to the increase number of percolated pathways.
• more balanced transport: µe ≈ 10 × µh. GCEP2004
Morphology: influence of spin cast solvent:MDMO-PPV:PCBM
from toluene from chlorobenzenea
0.5 µm
b
0.5 µm
0.0 0.5 1.0 1.5 2.0 2.5-4
0
4
8
Sur
face
Hei
ght (
nm)
Distance (µm)0.0 0.5 1.0 1.5 2.0 2.5
-4
0
4
8
Sur
face
Hei
ght (
nm)
Distance (µm) GCEP2004GCEP2004
Morphology: influence of spin cast solvent:
Glass
PEDOT
Active layer
LiF
AluminumSMU
+-
ITO
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9-6
-5
-4
-3
-2
-1
0
from toluene from chlorobenzene
Cur
rent
Den
sity
(mA
/cm
2 )
Voltage (V)
S. E. Shaheen, C. J. Brabec, F. Padinger, T. Fromherz, J. C. Hummelen, N. S. Sariciftci, Appl. Phys.Lett. 78, 841-3 (2001). GCEP2004
Morphology control: compatibilizingwith the PCBX series
O
O
O
O
O
O
O
O
O
O
O
OH O
O
O
O
PCBM PCBE PCBPr
PCBEH PCBDMO
GCEP2004
Dropcasting using different acceptorsGilch-PPV/PCBM
Toluene 1:4Gilch-PPV/PCBDMO
Toluene 1:42001 01096 2002 01505
TEMT. Martens, Z. Beelen, J. D’Haen, J. Manca, IMEC
Unfiltered
GCEP2004
Dropcasting using different acceptors
2001 01078
Gilch-PPV/PCBMChlorobenzene 1:4
Gilch-PPV/PCBDMOChlorobenzene 1:4
2002 01521
T. Martens, Z. Beelen, J. D’Haen, J. Manca, IMEC
TEM Unfiltered GCEP2004
The photoinduced LUMO-LUMO electron transfer process(from excited donor)
Eref
LUMO
HOMO
Light
Voc(max)
D A
Anode CathodeGCEP2004
Improving Voc
Eref
Anode Cathode
AD
Voc(max)
is there some truth in this picture? GCEP2004
Soluble fullerene derivativeswith varying acceptor strength
O
OO
N OO
O
N
EHO-Azafulleroid-[5,6] EHO-Ketolactam PCBM-[6,6]
GCEP2004
PCBM Ered tuning
O
O
O
O
OCH3
CH3O
O
O
OCH3
CH3O OCH3
O
O
OCH3
O
O
OCH3
CH3O
O
O
CH3O
GCEP2004Joop Knol, Floris Kooistra
Voc versus Ered acceptorin MDMO-PPV/acceptor cells (CB)
-1.15 -1.10 -1.05 -1.00 -0.95
600
700
800
900
V oc
Ered
vs Fc/Fc+
KL
C60
AF
PCBM3,4-(MeO)2PCBM, TCBM
2,3,4-(MeO)3PCBM
.PCBM
GCEP2004
Higher fullerenes: [70]PCBM
M.M. Wienk, J. M. Kroon, W. J. H. Verhees, J. Knol, J. C. Hummelen,
P. A. van Hal, and R. A. J. Janssen, Angew. Chemie 42, 3371-5 (2003)
GCEP2004
The photoinduced HOMO-HOMO electron transfer process(to excited acceptor)
Evac
LUMO
HOMO
LightVoc(max)
D A
Anode CathodeGCEP2004~ ‘hole transfer’
IPR Fullerenes C60-C80 (calculated)
GCEP2004
UV-Vis spectrum of [60]PCBM
300 400 500 600 700 8000
10
20
30
40
50ex
tinct
ion
coef
ficie
nt /
L g-1cm
-1
wavelength / nm
O
O
GCEP2004
Synthesis of [70]PCBM
(chiral)85 % 15 %
OMe
O
OMeO
OMe
O
+ +
NNHTs
OMeO
base, C70 ODCB
GCEP2004
UV-Vis spectra of [60]PCBM and [70]PCBM
300 400 500 600 700 8000
10
20
30
40
50ex
tinct
ion
coef
ficie
nt /
L g-1cm
-1
wavelength / nm[60]PCBM:MDMO-PPV (4:1, w/w) and [70]PCBM:MDMO-PPV (4:1, w/w) (normalized)
All in toluene GCEP2004
PL decay of the fullerene emission at 720 nm of [70]PCBM:MDMO-PPV (4:1 w/w) films
0 1 2 3 410
100
1000
10000
Cou
nts
Time / ns
Spun from chlorobenzene, o-xylene, and ODCB. Yellow: pristine [70]PCBM film
PL quenching:0, 30, 60, 95 %
GCEP2004
AFM tapping mode height images[70]PCBM:MDMO-PPV (4:1 w/w) films on glass
z-range = 37 nm rms roughness = 7 nm
o-xylenez-range = 86 nm
rms roughness = 12 nm
CB ODCBz-range = 8.2 nm
rms roughness = 1.0 nm
0 1 2 3 410
100
1000
10000
Cou
nts
Time / nsGCEP2004
Spectral response (EQE) of ITO/PEDOT-PSS/fullerene:MDMO-PPV/LiF/Al cells
400 500 600 700 800 9000.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7EQ
E
wavelength / nm
[70]PCBM:MDMO-PPV cells, spun from CB and ODCB[60]PCBM: MDMO-PPV cell spun from CB; active areas = 0.1 cm2 GCEP2004
I / V characteristics of [70]PCBM:MDMO-PPV devices
-1.0 -0.5 0.0 0.5 1.0-10
-5
0
5
10
15
20
Cur
rent
Den
sity
/ m
Acm
-1
Voltage / V
-2 -1 0 1 21E-5
1E-3
0.1
10
1000
VOC = 0.77 VISC = 7.6 mA/cm2
FF = 0.51η = 3.0 %
M.M. Wienk, J. M. Kroon, W. J. H. Verhees, J. Knol, J. C. Hummelen, P. A. van Hal, and R. A. J. Janssen, Angew. Chemie 42, 3371-5 (2003)
GCEP2004
[70]PCBM Available from Nano-C Inc. (Westwood, Mass)nano-c.com
Morphology of the bulk heterojunction
• Formationphases, domain sizes, percolation, wetting, processing, annealing, thickness
• Efficiencyexciton diffusion, charge separation, charge recombination, (balanced) mobilities
• Stabilityphase separation (crystallization),(photo-)chemistry
GCEP2004
Some provoking remarks
• No theoretical grounds for inferior efficieny of molecular devices
• Higher efficiency => improved stability• Molecular materials offer infinite architectural
opportunities (even for 3rd generation tricks)• General: 225M$ is very attractive! Beware of
groups that not have a real focus on sustainable energy? (PV in this case)
GCEP2004
• Joop Knol• Minze T. Rispens• Floris Kooistra• Luis Sanchez• Jan Alma• Patrick van ‘t Hof• Valentin Mihailetchi• Paul Blom (RuG)
• Paul van Hal • René Janssen (TU/e)
• Jan M. Kroon• Wiljan Verhees• Martijn Wienk (ECN)
• Christoph Brabec (now Siemens/Konarka)
• Serdar Sariciftci (Uni Linz)
• David Kronholm• Henning Richter (Nano-C)
Novem (The Netherlands’ Organization for Energy and the Environment)
E.E.T. (“Economy, Ecology, Technology” by Dutch EZ, OC&W, VROM depts)
Acknowledgments
GCEP2004
Acknowledgments