OFF-THE-SHELF J 2011radiant.su/files/catalog/post/67_january2011_newsletter-web.pdf · wideband/carrier, transceiver which is compact ... +34 dBm @ 20% PAE High Output IP3: +40 dBm

Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation

OFF-THE-SHELF January

2011

Order On-line at: www.hittite.com2 Elizabeth Drive • Chelmsford, MA 01824 • 978-250-3343 tel • 978-250-3373 fax

SingLE-EndEd rMS dETEcTOrS Span 75 dB dynaMic rangE!150 MHz Envelope Detection Bandwidth is Ideal for 3G / 4G / LTE

The HMC1020LP4E & HMC1021LP4E RMS power detectors are suitable for broadband, high dynamic range applications requiring repeatable measurement of average signal power; especially where dete-ction of RF and intermediate-frequency (IF) wave shape and/or crest factor change is crucial. Both devices feature RMS detection cores that operate from DC to 3.9 GHz and achieve input sensing ranges to 76 dB and 73 dB, respectively (with measurement accuracy of ±1 dB), while using a simple single-ended input interface. The HMC1021LP4E, which integrates a fast envelope detector core with a detection bandwidth higher than 100 MHz, also serves applications that require instantaneous envelope measurements of RF carriers with wide modulation bandwidths. Additionally, the instantaneous envelope output can be used to create fast, excessive RF power protection, PA linearization, and efficiency enhancing envelope PA implementations.

HiTTiTE LauncHES nEw iF / BaSEBand prOcESSing prOducT LinE!New Baseband Products are Ideal for Driving ADCs in Zero IF Architectures

Hittite Microwave introduces the IF / Baseband Processing integrated circuit product line which includes two new baseband compatible products that combine excellent performance with flexibility and low cost. The HMC960LP4E dual digital variable gain amplifier and the HMC900LP5E dual programmable low pass filter with driver, meet the demand for a universal multi-standard, wideband/carrier, transceiver which is compact

and capable of processing complex high density constellations.

The HMC900LP5E and HMC960LP4E provide basestation and microwave link de-signers with a simplified direct conversion receiver architecture. A direct conversion, or zero-IF receiver, is a radio receiver that demodulates the incoming signal by mixing it with a local oscillator signal synchronized in frequency to the carrier of the

(Continued on page 11)

(Continued on page 10)

HiTTiTE acquirES arcTic SiLicOn dEvicES!New High Speed ADC Product Line Offers Lowest Power Consumption for Best SNR

Hittite Microwave is pleased to announce our acquisition of Arctic Silicon Devices (ASD) and their advanced mixed-signal integrated circuit (IC) technology. ASD has successfully designed & launched innovative, multifunction Analog-to-Digital Converter (ADC) products that provide ultra low power dissipation, ease of use, and cost efficiency while maintaining high performance that complements Hittite’s existing RF, microwave and mixed-signal IC product lines. The acquisition expands Hittite’s product offerings in communication, indus-trial, medical, test & measurement and military applications. See page 2 for details on the new Analog-to-Digital Converters now offered by Hittite as in-stock products. Please contact [email protected] for all product inquiries and for information on Hittite-ASD products not shown.

2W & 4W Power Amplifiers

HMC949 & HMC950

• High Output IP3 to +44.5 dBm • High Gain to 31 dB • DC Supply: +5V to +7V

See Page 4

Tri-Band PLL+VCO

HMC837LP6CE & HMC840LP6CE

• RF Bandwidths: 1025 to 5660 MHz • -141 dBc/Hz @ 1 MHz Offset • 120 fs RMS Jitter

See Page 7

2 to 6 GHz MicroSynth®

HMC-C083

• Compact, Broadband Synthesizer • 24-Bit Step Size, 0.6 Hz Res. • Auto & Triggered Sweeper

See Page 9

HMC900LP5E Dual Baseband LPF

New FeaturedProducts!49

New 10 MHz to 20 GHz Signal Generator!

See Page 3

JAnuARy 2011 VISIT uS AT: www.hittite.com2

OFF

-TH

e-S

He

LF

Bro

adba

ndC

ellu

lar

Infr

astr

uctu

reFi

ber

Opt

icM

icro

wav

e &

mm

Wav

eM

ilita

ry

Spa

ceTe

st &

M

easu

rem

ent

Hittite Microwave offers over 925 products across 31 product lines. Our custom and standard products support a wide range of wireless/wired communications and radar applications for the following markets.

Automotive

Telematics & Sensors

Fiber Optic

OC-48 to 100G

Space

Payload Electronics

Broadband

CATV, DBS, WiMAX, WLAn, Fixed Wireless & uWB

Microwave & mmWave CommunicationsBackhaul Radio LinksMulti-Pt Radios & VSAT

Test & Measurement

Commercial / Industrial Sensors & Test Equipment

Cellular Infrastructure

GSM, GPRS, CDMA, WCDMA, uMTS, TD-SCDMA & 4G/LTE

Military

C3I, ECM & EW

Aut

omot

iveNew Products by Market Application

Part Number FunctionFrequency

(GHz)Page

Number

Amplifiers

HMC863LP4E Power Amplifier, 1/2 Watt 22 - 26.5 4

HMC943LP5E Power Amplifier, 1.5 Watt 24 - 31.5 4

HMC949 Power Amplifier, 2 Watt 12 - 16 4

HMC950 Power Amplifier, 4 Watt 12 - 16 4

HMC965LP5E Power Amplifier, 2 Watt 12.5 - 15.5 4

HMC770LP4BE 50 / 75 Ω Differential Gain Block 0.04 - 1.0 7

HMC-C059 Low noise 1 - 12 9

HMC-C079 Low Phase noise 3 - 8 9

Attenuators

HMC939 5-Bit Digital 0.1 - 40 5

HMC941 5-Bit Digital 0.1 - 30 5

HMC973LP3E Analog VVA 0.5 - 6.0 6

Broadband Time Delay

HMC856LC5 5-Bit Digital Time Delay 28 Gbps 10

Comparators

HMC674LP3E Latched Comparator-RSPECL 10 8

HMC675LP3E Latched Comparator-RSCML 10 8

HMC676LP3E Latched Comparator-RSECL 10 8

Data Converters - Low Power Analog-to-Digital Converters

HMCAD1520High Speed Single / Dual /

Quad & Precision Quad Channel12-Bit / 640 MSPS 1


Quad Channel8-Bit / 1 GSPS 1


Quad Channel8-Bit / 500 MSPS 1

HMCAD1102 Octal Channel 13-Bit / 80 MSPS 1



HMCAD1060 Quad Channel 14-Bit / 105 MSPS 1

HMCAD1050-80 Dual Channel 13-Bit / 80 MSPS 1


HMCAD1051-80 Single Channel 13-Bit / 80 MSPS 1






IF / Baseband Processing - New Product Line!

HMC900LP5E Dual Baseband Low Pass 100 MHz BW 1, 11

HMC960LP4E Dual Channel VGA 180 MHz BW 1, 11

Limiting Amplifiers

HMC914LP4E Limiting Amplifier with LOS 12.5 Gbps 8

MicroSynth®

HMC-C083 MicroSynth® Synthesizer 2 - 6 9

3 VISIT uS AT: www.hittite.com JAnuARy 2011

OFF

-TH

e-S

He

LF

Bro

adba

ndC

ellu

lar

Infr

astr

uctu

reFi

ber

Opt

icM

icro

wav

e &

mm

Wav

eM

ilita

ry

Spa

ce

Test

&

Mea

sure

men

t

Aut

omot

iveNew Products by Market Application

Part Number FunctionFrequency

(GHz)Page

Number

nEw HigH pOwEr 10 MHz TO 20 gHz SynTHESizEd SignaL gEnEraTOr

The HMC-T2220 Synthesized Signal Generator to provides R&D and production test engineers with the highest level of performance and functionality while maintaining a reasonable cost of only $9,998.00.

The HMC-T2220 provides an output frequency range of 10 MHz to 20 GHz, with greater than +25 dBm output power, is adjustable with 0.1 dB resolution, and a minimum programmable output power of -35 dBm which equates to a dynamic range of 60 dB across the band.

The HMC-T2220 is also extremely flex-ible and quiet in the frequency domain, providing a frequency resolution of 1 Hz, and a very low single side-band phase noise of -98 dBm/Hz (10 kHz offset) at 10 GHz. This instrument delivers extremely fast 300 µs frequency switching speeds, making it ideal for frequency hopping and threat simulation applications.

The HMC-T2220 pricing allows for extremely cost effective Ku-band third order intermodulation distortion test stands in both engineering and production test departments.

Each unit includes all software drivers required to remotely control the instrument in single or swept modes for frequency and/or power and the HMC-T2220 is backward compatible with the previously released HMC-T2100 software. Contact Hittite today at [email protected] to request your on-site product demonstration.

FOur SMT paSSivE aTTEnuaTOrS FOr appLicaTiOnS TO 25 gHz!Compact size, excellent attenuation accuracy and low cost make these fixed attenuators ideal for microwave radio and military EW applications. See page 10.

Passives

HMC652LP2E Passive DC - 25 10

Passives




Power Detectors

HMC1020LP4E RMS, Single-Ended DC - 3.9 1, 10

HMC1021LP4ERMS, Single-Ended

with Envelope TrackerDC - 3.9 1, 10

HMC1010LP4E RMS Detector DC - 3.9 1, 10

HMC909LP4E RMS Detector DC - 5.8 1, 10

PLLs

HMC704LP4E Low Spur/noise Fractional-n DC - 8 7

PLLs with Integrated VCOs

HMC837LP6CE Tri-Band RF VCO 1.025 - 4.6 7

HMC840LP6CE Tri-Band RF VCO 1.31 - 5.66 7

Switches

HMC641LP4E SP4T, non-Reflective DC - 20 5

HMC944LC4 SP4T, Reflective 23 - 30 5

Signal Generators

HMC-T2220 Signal Generator 0.01 - 20 3

Transimpedance Amplifier

HMC799LP3E Low noise Transimpedance Amp. DC - 0.7 8

Variable Gain Amplifiers

HMC972LP5E Analog 0.5 - 6.0 6

HMC926LP5E 6-Bit Digital 0.7 - 2.7 6

$9,998.00

-160

-140

-120

-100

-80

-60

-40

101 102 103 104 105 106 107 108

10 MHz50 MHz100 MHz1 GHz

5 GHz10 GHz15 GHz20 GHz

SS

B P

HA

SE

NO

ISE

(dB

c/H

z)

OFFSET FREQUENCY (Hz)

SSB Phase Noise vs. Output Frequency


OFF

-TH

e-S

He

LF

New SMT & Chip power AMplifierS for

MiCrowAve rAdio, vSAT, MiliTAry & TeST

HMC863LP4E & 943LP5E 0.5 & 1.5 Watt Power Amplifiers, 22 to 31.5 GHz

Features

Saturated Output Power: up to +34 dBm @ 24% PAE

High Output IP3 up to +41 dBm

High Gain up to 22 dB

DC Supply: +5V to +6V

no External Matching Required

Microwave Radio PAs

The HMC863LP4E and HMC943LP5E are 3 and 4 stage GaAs pHEMT MMIC Power Amplifiers which operate between 22 to 28 GHz and 24 to 31.5 GHz respectively. The HMC863LP4E & HMC943LP5E operate from a DC supply between +5V and +6V and require no external matching components. High output IP3 makes the HMC863LP4E & HMC943LP5E ideal for point-to-point and point-to-multi-point radio systems as well as VSAT applications. The RF I/Os are DC blocked and matched to 50 Ohms.

HMC965LP5E 2 Watt Power Amplifier, 12.5 to 15.5 GHz

Features

Saturated Output Power: +34 dBm @ 20% PAE

High Output IP3: +40 dBm

High Gain: 27 dB

DC Supply: +6V @ 1200 mA


Ideal for Ku-Band VSAT

The HMC965LP5E is a high gain GaAs pHEMT MMIC 2 Watt Power Amplifier with an integrated temperature compensated power detector which operates between 12.5 to 15.5 GHz. The HMC965LP5E provides 27 dB of gain, +34 dBm of saturated output power, and 20% PAE from a +6V supply. The amplifier exhibits excellent linearity, is optimized for high capacity digital radio and is also ideal for 13.75 to 14.5 GHz Ku-Band VSAT transmitters and SATCOM applications. The I/Os of the HMC965LP5E are internally matched to 50 Ohms.

Psat vs. Temperature

HMC949 & HMC950 2 & 4 Watt Power Amplifier Chips, 12 to 16 GHz

Features

Saturated Output Power: up to +38 dBm @ 28% PAE

High Output IP3 to +44.5 dBm

High Gain up to 31 dB

DC Supply: +5V to +7V


Integrated Power Detectors

The HMC949 & HMC950 are high gain GaAs pHEMT MMIC 2 and 4 Watt Power Amplifiers with integrated temperature compensated power detectors and are rated from 12 to 16 GHz. The HMC949 and HMC950 exhibit excellent linearity and are optimized for high capacity digital radio. These power amplifiers operate from supply voltages between +5V and +7V and are ideal for 13.75 to 14.5 GHz Ku-Band VSAT transmitters as well as SATCOM and point-to-point radio applications. no external matching components are required.

30

32

34

36

38

40

12 13 14 15 16

HMC950HMC949

FREQUENCY (GHz)

Psa

t (dB

m)

28

30

32

34

36

12.5 13 13.5 14 14.5 15 15.5

6V5V

FREQUENCY (GHz)

Psa

t (dB

m)

HMC943LP5e - Output IP3 vs. Temperature @ Pout = +22 dBm

25

30

35

40

45

50

24 25 26 27 28 29 30 31 32

+25C+85C -40C

IP3

(dB

m)

FREQUENCY (GHz)

HMC949 & HMC950 Psat vs. Frequency


OFF

-TH

e-S

He

LF

New CoNTrol deviCeS for fiber opTiC,MiCrowAve rAdio, MiliTAry & TeST

HMC939 & HMC941 1 dB LSB 5-Bit Digital Attenuator Chips, 0.1 to 40 GHz

Features

0.5 and 1 dB LSB Steps

Single Positive Control Line Per Bit

Low Bit Error

High Input IP3 up to +45 dBm

up to 31 dB Range

excellent Bit Accuracy

The HMC939 and HMC941 are broad-band 5-bit GaAs pHEMT digital atten-uator MMIC chips covering 0.1 to 40 GHz and 0.1 to 30 GHz respectively, with insertion loss less than 5 dB typical. Attenuation accuracy is excellent at less than ±1 dB typical step error with an Input IP3 up to +45 dBm. Five control voltage inputs, toggled between +5V and 0V, are used to select each attenuation state. The HMC939 offers a 1 dB LSB while the HMC941 is a 0.5 dB LSB attenuator.

HMC641LP4E SP4T Non-Reflective Switch, DC to 20 GHz

Low Loss, High Isolation

The HMC641LP4E is a broadband non-reflective GaAs pHEMT SP4T switch in a compact 4x4 mm plastic package. Covering DC to 20 GHz, this switch offers high isolation, low insertion loss and on-chip termination of isolated ports. This switch also includes an on chip binary decoder circuit which reduces the number of required logic control lines from four to two. The HMC641LP4E is controlled with 0/ -5V logic, exhibits fast switching speed and consumes much less DC current than PIn diode based solutions.

Features

High Isolation: 42 dB @ 10 GHz

Low Insertion Loss: 2.3 dB @ 10 GHz

Integrated 2:4 TTL Decoder

24 Lead 4x4mm SMT Package

Isolation vs. Frequency

HMC939 - Attenuation vs. Frequency

-35

-30

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30 35 40

NO

RM

ALI

ZE

D A

TT

EN

UA

TIO

N (

dB)

FREQUENCY (GHz)

-80

-70

-60

-50

-40

-30

-20

-10

0

0 4 8 12 16 20

RF1RF2RF3RF4

ISO

LAT

ION

(dB

)

FREQUENCY (GHz)

-80

-70

-60

-50

-40

-30

-20

-10

0

23 24 25 26 27 28 29 30

RF1RF2RF3RF4

ISO

LAT

ION

(dB

)

FREQUENCY (GHz)

HMC944LC4 SP4T Reflective Switch, 23 to 30 GHz

Features

Broadband Performance: 23 - 30 GHz

High Isolation: 35 dB

Low Insertion Loss: 2.8 dB

Fast Switching: 15 ns Rise/Fall Times

Ka-Band Multi-Throw Switch

The HMC944LC4 is a broadband ref-lective GaAs MESFET SP4T switch covering 23 to 30 GHz. This switch offers high isolation, and low insertion loss. The HMC944LC4 is controlled with 0/-3V logic, exhibits fast switching speed and consumes much less DC current than PIn diode based solutions. The HMC944LC4 is housed in a leadless 4x4 mm SMT package and is ideal for microwave radio as well as SATCOM and sensor applications.

Isolation vs. Frequency


OFF

-TH

e-S

He

LF

New ATTeNuATorS & vAriAble GAiN AMplifierS for broAdbANd & CellulAr iNfrASTruCTure

HMC973LP3E Voltage Variable Attenuator, 0.5 to 6.0 GHz

High Linearity at All Settings

The HMC973LP3E is an absorptive Vol- tage Variable Attenuator (VVA) ope-rating from 0.5 to 6 GHz which controls RF signal levels over a 26 dB amplitude range. It features a shunt-type attenuator controlled by a single analog voltage. The HMC973LP3E exhibits excellent linearity of +35 dBm input IP3 throughout its control range. The HMC973LP3E exhibits optimum linearity performance when the RF input signal is applied to RFIn. The HMC973LP3E is housed in a RoHS compliant 3x3 mm QFn leadless package.

Features

Excellent Linearity: +35 dBm Input IP3

Wide Attenuation Range: 26 dB

Single Positive Voltage Control: 0 to +5V

Absorptive Topology

Input IP3 vs. Control Voltage

10

20

30

40

50

60

0.5 1.5 2.5 3.5 4.5 5.5 6.5

0.0 V1.0 V1.6 V2.0 V2.6 V3.4 V

IP3

(dB

m)

FREQUENCY (GHz)

HMC972LP5E Analog Variable Gain Amplifier, 0.5 to 6.0 GHz

High Linearity, Wide Gain Range

The HMC972LP5E is an analog con-trolled variable gain amplifier composed of two identical voltage variable atten-uators in combination with an InGaP HBT gain block MMIC amplifier. The HMC972LP5E operates from 0.5 to 6 GHz, and can to provide anywhere from 15 dB of gain to 35 dB of atten-uation. The HMC972LP5E delivers noise figure of 7.5 dB in its maximum gain state with output IP3 of up to +28 dBm. The HMC972LP5E is housed in a RoHS compliant 5x5 mm QFn lead-less package, and requires no external matching components.

Features

Wide Gain Control Range: -35 to +15 dB


Analog Control: 0 to +5V

Can be Configured with 1 or 2 Attenuators

Gain vs. Control Voltage

-80

-70

-60

-50

-40

-30

-20

-10

0

10

20

0 1 2 3 4 5 6

0.0 V1.0 V1.6 V2.0 V2.6 V3.4 V

GA

IN (

dB)

FREQUENCY (GHz)

20

25

30

35

40

45

50

0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5

+25 C+85 C -40 C

FREQUENCY (GHz)

IP3

(dB

m)

HMC926LP5E 0.5 dB LSB 6-Bit Digital Variable Gain Amplifier, 0.7 to 2.7 GHz

Features

Gain Control Range: 6.5 to 38


noise Figure: 4.4 dB

Convenient Serial Control Interface

±0.25 dB Typical Step Error

High Gain Digital VGA

The HMC926LP5E is a digitally con-trolled variable gain amplifier which operates from 700 to 2700 MHz. The HMC926LP5E can be programmed to provide between +6.5 to +38 dB of gain, in 0.5 dB steps at 900 MHz. Gain con-trol range is from +1 dB to +32.5 dB at 1900 MHz and from -4 dB to +27.5 dB at 2600 MHz. The HMC926LP5E delivers noise figure of 4.4 dB in its maximum gain state with output IP3 of up to +45 dBm. The HMC926LP5E features a serial gain control interface and a user selectable power up state.

Output IP3 vs. Temperature @ 900 MHz


OFF

-TH

e-S

He

LF

HMC770LP4BE GaAs pHeMT 50 / 75 Ohm Differential Amplifier, 0.04 to 1 GHz

Features


Single Positive Supply: +5V

Low noise Figure: 2.5 dB

Power-Down Mode

Differential RF I/O’s

Multi-Octave Differential Amplifier

The HMC770LP4BE is a GaAs pHEMT Differential Gain Block MMIC Amplifier covering 40 MHz to 1 GHz and packaged in a 4x4 mm plastic QFn SMT package. This versatile amplifier can be used as a cascadable IF or RF gain stage in both 50 Ohm and 75 Ohm applications. The HMC770LP4BE delivers 16 dB gain, and +40 dBm output IP3, with only 2.5 dB noise figure. Differential I/Os make this amplifier ideal for transim-pedance and SAW filter applications and in transceivers where the IF path must be handled differentially for improved noise performance.

Output IP3 vs. Vdd @ 75 Ohms

20

25

30

35

40

45

0 0.2 0.4 0.6 0.8 1

4.5V5.0V5.5V

FREQUENCY (GHz)

IP3

(dB

m)

HMC704LP4E 8 GHz 16-Bit Fractional-N PLL

Features

Industry Leading Phase noise & Spurious -112 dBc/Hz @ 8 GHz Fractional, 50 kHz Offset

Figure of Merit -230 dBc/Hz Frac. Mode -233 dBc/Hz Int. Mode 100 MHz PFD

High PFD rate: 100 MHz

Industry-Leading Phase Noise

The HMC704LP4E offers industry lead-ing phase noise and the lowest spurious content in an integrated synthesizer. Fabricated in an advanced SiGe Bi-CMOS process, this Fractional-n PLL consists of a very low noise digital phase detector, VCO divider, reference divider and a precision controlled charge pump. ultra low in-close phase noise and low spurious allows wide loop bandwidths. Exact frequency mode with 24-bit fractional modulator provides the ability to generate fractional frequencies with zero frequency error, an important feature for Digital Pre-Distortion (DPD) systems.

Flicker Figure of Merit

HMC837 / 840LP6CE Fractional-N PLL with Integrated Tri-Band RF VCOs

Features

HMC837LP6CE RF Bandwidths: 1025 to 4600 MHz

HMC840LP6CE RF Bandwidths: 1310 to 5660 MHz

RMS Jitter as Low as 120 fs

High Output Power: +12 dBm

Low Spurious, 1 to 5.6 GHz

The HMC837LP6CE & HMC840LP6CE are fully functioned Fractional-n Phase-Locked-Loops (PLLs) with Inte-grated Voltage Controlled Oscillators (VCOs). The PLL consists of a low noise VCO with tri-band output, an auto-calibration subsystem for low voltage VCO tuning, a very low noise digital Phase Detector (PD), a precision controlled charge pump, a low noise reference path divider and a fractional divider. ultra low in-close phase noise and low spurious also allows wider loop bandwidths for faster frequency hop-ping and low microphonics.

HMC837LP6Ce - Closed Loop Integer Phase Noise

-180

-160

-140

-120

-100

50MHz PFD 71KHz BW 169 fsec50MHz PFD 127KHz BW 118 fsec100MHz PFD 100KHz BW 129 fsec100MHz PFD 178KHz BW 89 fsec

103 104 105 106 107 108


PH

AS

E N

OIS

E (

dBc/

Hz)

@ 2

600

MH

z

-270

-269

-268

-267

-266

-265

-264

-263

INTFRAC MODE AHIK INTHIK FRAC MODE A

-40 -20 0 20 40 60 80

FLI

CK

ER

FO

M

TEMPERATURE (C)

New AMplifierS & pll+vCoS for

broAdbANd & CellulAr iNfrASTruCTure


OFF

-TH

e-S

He

LF

New AMplifierS & CoMpArATorS for

broAdbANd, fiber opTiC & hiGh Speed dATA

HMC914LP4E 12.5 Gbps Limiting Amplifier, with Loss of Signal Feature

Features

Differential Small Signal Gain: 32 dB

Programmable Loss-of-Signal Detection (LOS)

Automatic Output Disable Mode

Adjustable Differential Output Voltage Swing up to 750 mVp-p

Ideal for OC-192 Modules

The HMC914LP4E limiting amplifier supports data transmission rates up to 12.5 Gbps, can operate over a wide range of input voltage levels and pro-vides constant-level differential output swing. The HMC914LP4E features an adjustable loss of signal (LOS) indicator output and an output level control pin, which allows for loss compensation or for output signal level optimization. Differential output signal swing can be adjusted up to 750 mVp-p. The HMC914LP4E provides an analog RSSI output voltage which is proportional to input signal amplitude.

HMC799LP3E 10 kOhm Transimpedance Amplifier, DC to 700 MHz

Ideal for Laser Sensors

The HMC799LP3E is a DC to 700 MHz transimpedance amplifier designed for opto-electronic laser sensor applica-tions, FDDI receivers and receiver systems employing optical to electrical conversion. This amplifier provides a single-ended output voltage that is proportional to an applied current at its input port. This current is typically provided by a photodiode. Operating from a single +5V supply, HMC799LP3E features very low input referred noise, and very large electrical input dynamic range exceeding 65 dB. Ten kOhm or 80 dB Ohms transimpedance gain provides very good sensitivity at higher data rates.

Features

10 kOhm Transimpedance

Very Low noise: 150nA Input RMS noise

700 MHz Analog Bandwidth

Wide Dynamic Range: +65 dB

Low Power Consumption: +5V @ 70mA

Input Referred Noise Density vs. Temperature

eye Diagram - 10 Gbps Output

HMC674 / 675 / 676LP3E 10 GHz RS-PeCL / CML / eCL Low Cost Comparators

Features

Propagation Delay: < 90 ps

Minimum Pulse Width: 60 ps

Resistor Programmable Hysteresis

Differential Latch Control

Overdrive & Slew Rate Dispersion: 10 ps

Active Gain to 48 dB

Latched or Tracking Modes

The HMC674LP3E, HMC675LP3E and HMC676LP3E are ultra fast comparators which feature reduced swing PECL/CML/ECL output drivers and latch inputs. These comparators sup-port 10 Gbps operation providing 85 ps propagation delay and 0.2 ps rms random jitter (RJ), making them ideal for a wide range of applications from ATE to broadband communications. These devices also feature differential latch control, programmable hysteresis, and may be configured to operate in either latch mode, or as tracking comparators.

Dispersion vs. Overdrive Voltage

-1

1

3

5

7

9

11

0 10 20 30 40 50 60 70 80 90 100

Rising EdgeFalling Edge

DIS

PE

RS

ION

(ps

)

OVERDRIVE VOLTAGE (mV)

Current Minimum Maximum Total MeasEye Amp 358 mV 358 mV 358 mV 81

Rise Time 36.00 ps 36.00 ps 37.33 ps 81Fall Time 35.33 ps 34.67 ps 36.00 ps 81p-p Jitter 15.333 ps 12.000 ps 15.333 ps 81

0

5

10

15

20

0 100 200 300 400 500 600 700 800

+25C+85C -40C

FREQUENCY (MHz)

INP

UT

RE

FE

RR

ED

NO

ISE

(pA

/ H

z)√


OFF

-TH

e-S

He

LF

HMC-C083 MicroSynth® Integrated Synthesizer Module, 2 to 6 GHz

Features

Extremely Compact, Broadband Synthesizer

24-Bit Step Size, 0.6 Hz Resolution

Auto & Triggered Sweeper Functions

Integrated Low noise Voltage Regulators

Compact Low Noise Sweeper

The HMC-C083 MicroSynth® is a fully integrated broadband synthesizer in a hermetic module package. The output frequency range is 2 to 6 GHz with an average output power of +17 dBm. In Fractional-n mode, the HMC-C083 can realize step sizes as low as 0.6 Hz. The HMC-C083 also features fully integrated low noise regulators and an output buffer amplifier which results in superior pushing and pulling performance. This module has been designed to withstand harsh environments and can be up-screened to higher military standards upon request.

HMC-C079 Ultra Low Phase Noise Amplifier Module, 3 to 8 GHz

Features

ultra Low Phase noise: -162 dBc/Hz @ 1 kHz

noise Figure: 6 dB

Gain: 11 dB

Output Power: +21 dB

50 Ohm Matched Input/Output

Wideband, High Linearity

The HMC-C079 is a GaAs HBT ultra Low noise Amplifier in a miniature, hermetic module designed to operate between 3 and 8 GHz. This high dy-namic range amplifier module provides 11 dB of gain, 6 dB noise figure and up to +21 dBm of output power with a single supply of +7V. The ultra low phase noise contribution of -162 dBc/Hz at 1 kHz offset, enables superior modulation accuracy within transceiver architectures. The wideband distributed amplifier I/O’s are internally matched to 50 Ohms and DC blocked for robust performance.

Phase Noise vs. Temperature @ 3.5 GHz, +10 dBm

HMC-C059 Wideband Low Noise Amplifier Module, 1 to 12 GHz

Features

noise Figure: 1.8 dB @ 8 GHz

High Gain: 16 dB @ 8 GHz

P1dB Output Power: +16 dBm @ 8 GHz

Regulated Supply & Bias Sequencing

High Gain, Low Noise

The HMC-C059 is a GaAs MMIC pHEMT Low noise Distributed Amplifier in a miniature, hermetic module with replaceable SMA connectors which operates between 1 and 12 GHz. The amplifier provides 16 dB of gain, 1.8 dB noise figure, and up to +17 dBm of output power at 1 dB gain compression. The wideband amplifier I/Os are internally matched to 50 Ohms and DC blocked. Integrated voltage regulators allow for flexible biasing of both the negative and positive supply pins, while internal bias sequencing circuitry assures ro-bust operation.

Noise Figure vs. Temperature

0

1

2

3

4

5

6

0 2 4 6 8 10 12

+25 C+85 C -55 C

NO

ISE

FIG

UR

E (

dB)

FREQUENCY (GHz)

-180

-170

-160

-150

-140

-130

-120

-110

-100

102 103 104 105

+25 C+85 C -55 C

SS

B P

HA

SE

NO

ISE

(dB

c/H

z)


Phase Noise @ 4 GHz

-150

-140

-130

-120

-110

-100

-90

-80

-70

-60

103 104 105 106 107

+25 C Fractional-N+25 C Integer-N


PH

AS

E N

OIS

E (

dBc/

Hz)

New robuST herMeTiC Module produCTS for

MiliTAry, SpACe & TeST


OFF

-TH

e-S

He

LF

A Selection of Hittite’s Passives - Typical Performance

Part numberFreq.(GHz)

FunctionAtten.

Accuracy (dB)nominal

Atten. (dB)Max. Input

Power (dBm)

HMC652LP2E DC - 25 Passive ±0.5 2 27




Hittite’s RMS Power Detectors

Part numberFrequency

(GHz)Function

Dynamic Range (dB)

RSSI Slope (mV / dB)

RF Threshold Level (dBm)

Bias Supply

HMC1020LP4E DC - 3.9 RMS, Single-Ended 72 ± 1 35 -68 +5V @ 55mA

HMC1021LP4E DC - 3.9 RMS, Single-Ended with Envelope Tracker 70 ± 1 35 -68 +5V @ 75mA

HMC1010LP4E DC - 3.9 RMS Detector 60 ±1 37 -69 +5V @ 50mA

HMC909LP4E DC - 5.8 RMS Detector 40 ±1 37 -69 +5V @ 42mA

The HMC652 / 653 / 654 / 655LP2E are wideband fixed value 50 Ohm matched attenu-ators which offer relative atten-uation levels of 2, 3, 4 and 6 dB respectively. These passive at-tenuator pads exhibit extremely

flat attenuation and excellent return losses and are priced at only $1.33 each in 10,000 piece quantities.

The HMC652LP2E, HMC653LP2E, HMC654LP2E and HMC655LP2E are also available in chip form as the HMC652, HMC653, HMC654 and HMC655 which are rated to 50 GHz. These wideband passive attenuator pads com-plement Hittite’s broad line of fixed value attenuators and offer relative attenuation values between 0 and 20 dB.

The HMC856LC5 is a 5-Bit, 28 Gbps Digital Time Delay that is ideal for broadband test and measurement, SOnET OC-192 based systems, clock & data recovery, frequency synthesis and timing compensation/clock skew applica-tions. This monotonic time delay is DC coupled, features 100 ps of delay range with 3 ps resolution and is stable over both power supply and temperature variation. The HMC856LC5 accepts either single-ended or differential input data, while the differential output swing is program-mable from 500 to 1350 mVp-p to facilitate loss compensation or signal level optimization. Propagation delay is 255 ps, while rise/fall times are 20 ps. The HMC856LC5 exhibits less than 0.2 ps rms of additive random jitter. The HMC856LC5 is housed in a ceramic 5x5 mm SMT package and consumes only 185 mA from a single -3.3V supply.

SingLE-EndEd rMS dETEcTOrS Span 75 dB dynaMic rangE! ... (continued from page 1)

FOur paSSivE aTTEnuaTOrS, dc TO 25 gHz nEw 28 gbps BrOadBand digiTaL TiME dELay

New produCTS for hiGh perforMANCe CellulAr, MiCrowAve rAdio & MiliTAry

These RMS power detectors can tackle average power measurements on signals with complex modulation, including those with peak-to-average power ratios (crest factors) as high as 15 dB. The HMC1020LP4E and HMC1021LP4E maintains high accuracy independent of the modulation of the RF carrier. Both RMS detectors

achieve less than 0.1 dB detection deviations with respect to CW response under all modulation schemes, including LTE, HSDPA, CDMA, W-CDMA, TD-SCDMA and WiMAX/WiBRO.

Designed for ease of use compared with traditional differential RMS power detectors, the HMC1020LP4E and HMC1021LP4E provide a simple single-ended interface, which eliminates the cost of a balun. The simpler circuitry possible with a single-ended interface also contributes to increased measurement repeatability.

The table below summarizes key performance parameters of the HMC1020LP4E & HMC1021LP4E RMS detectors. Previously released HMC909LP4E and HMC1010LP4E are shown for comparison.

Both the HMC1020LP4E and the HMC1021LP4E operate from a +5V single supply, are housed in 4x4 mm plastic leadless surface mount packages and provide excellent temperature stability from -40°C to +85°C.

0

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

-4

-3

-2

-1

0

1

2

3

4

-70 -60 -50 -40 -30 -20 -10 0 10

100MHz900MHz1900MHz2700MHz3500MHz3900MHz

RM

SO

UT

(V

) ER

RO

R (dB

)

INPUT POWER (dBm)

Log Conformance of the HMC1020LP4E @ Different Frequencies

0

10

20

30

40

50

60

70

80

90

100

0 4 8 12 16 20 24 28 32

+25C+85C -40C

TIM

E D

ELA

Y (

ps)

SETTING (bits)

Time Delay vs. Temperature


OFF

-TH

e-S

He

LF

What We Do

Hittite Microwave Corporation is an innovative designer and manufacturer of high performance integrated circuits, or ICs, modules, subsystems and instrumentation for technically demanding digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. The Company’s standard and custom products apply analog, digital and mixed-signal semiconductor technologies, which are used in a wide variety of wireless / wired communication and sensor applications.

We design and supply custom ICs, Modules, Subsystems and Instrumentation, combining multiple functions for specific requirements. We select the most appropriate semiconductor and package technologies, uniquely balancing digital and analog integration techniques.

Hittite Microwave is ISO 9001:2000 and AS9100B certified. Every component is backed by every Hittite employee and subcontractor’s commitment to total quality, thus providing our customers with products that meet or exceed all requirements, are delivered on-time and function reliably throughout their useful life.

AmplifiersAttenuatorsBroadband Time DelaysComparatorsCrosspoint SwitchData ConvertersDC Power ConditioningDC Power ManagementDROsFilters - TunableFreq. Dividers & DetectorsFreq. MultipliersHigh Speed Digital LogicLimiting AmplifiersIF / Baseband ProcessingInterface

New produCTS for Zero if AppliCATioNS

Offering over 925 standard products across 31 product lines

MixersMods. & DemodulatorsMux & DemuxPassivesPhase ShiftersPLLsPLLs with Integrated VCOsPower DetectorsSDLVAsSensorsSignal GeneratorsSwitchesTransimpedance AmplifiersVGAsVCOs & PLOs

HiTTiTE LauncHES nEw iF / BaSEBand prOcESSing prOducT LinE ... (continued from page 1)

Dual Baseband Low Pass Filter

Part numberProgrammable

Bandwidth (MHz)Function

3 dB Bandwidth Accuracy (%)

Gain (dB)

noise Figure (dB)

OIP3 (dBm)

HMC900LP5E 3.5 - 50 Dual Baseband Low Pass ±2.5 0 / 10 12 30

Dual Variable Gain Amplifier

Part numberFrequency

(MHz)Function

OIP3(dBm)

OIP2(dBm)

Sideband Supp. (dB)

Magnitude / Phase Response (dB / deg)

Supply Bias

HMC960LP4E DC - 100Dual Channel VGA 40 dB Gain Control

30 65 55 ±0.1 / ±1 +5V @ 70mA

modulated signal. Direct conversion receivers translate the channel of interest directly from RF to baseband in a single stage. Zero IF downconversion must provide quadrature outputs to avoid an overlap in baseband of the desired signal and the image frequency signal.

The HMC960LP4E is a dual channel digitally program-mable, differential variable gain amplifier. It supports discrete gain levels from 0 to 40 dB, in 0.5 dB steps which are smooth and precise.

The dual differential HMC900LP5E filter features 0 or 10 dB input gain settings and supports arbitrary bandwidths from 3.5 to 50 MHz. Once calibrated, the accuracy is ±2.5% of the desired bandwidth. The 6th order Butterworth transfer function delivers superior stop band rejection while maintaining both a flat passband and minimal group delay variation.

The HMC960LP4E can be combined with the HMC900LP5E to build an ideal baseband line-up that drives a pair of Hittite I/Q channel Analog-to-

Digital Converters (ADCs). Hittite’s newly acquired HMCAD1520 12-bit ADC with it’s dual channel, 320 MSPS sampling rate is an ideal match with the HMC900LP5E in direct conversion receiver applications. The HMCAD1520 can also be software configured to a 4-channel, 14-bit 80 MSPS configuration for direct conversion diversity receiver or MIMO applications. In addition both products have an externally controlled common mode output vol-tage feature that greatly simplifies the ADC interface. They also offer high linearity, very low noise, excellent quad-rature balance, superior RF isolation between channels and high precision. These features enable the receiver designer to overcome the challenge of rejecting out of channel interferers while maintaining a perfect noise versus linearity trade-off.

DSP0

90°PLL

COMMONMODEVOLTAGE

PLL

÷ N

ADC

ADC

HMC794LP3eProgrammable Divider

HMC900LP5eDual Channel Baseband LPF

HMCAD1520Analog-to-Digital

Converter

HMC960LP4eDual Channel

VGA

HMC822LP6CeTri-Band PLL + VCO

HMC821LP6CeTri-Band PLL + VCOHMC597LP4e

I/Q Demodulator

HMC639ST89eLow Noise Amplifier

Direct Downconversion Receiver

January

2011Connecting Our World Through Integrated Solutions

Order On-line at: www.hittite.com© 2011, Hittite Microwave Corporation, All Rights Reserved.

2 Elizabeth Drive • Chelmsford, MA 01824 • 978-250-3343 tel • 978-250-3373 fax

Boston • Hyderabad • London • Munich • Seoul • Shanghai • Stockholm • Tokyo

Receive the latest product releases at www.hittite.com - click on “My Subscription”

Hittite Microwave Worldwide Sales Offices

Sales Representatives

AmericasHittite Microwave CorporationUSA Corporate Headquarters Phone: 978-250-3343 Fax: 978-250-3373 [email protected]

Eastern - North America Philadelphia, PA Phone: 978-337-1226 [email protected]

Central (North) - North America Chicago, IL Phone: 312-485-8730 [email protected]

Central (South) - North America Dallas, TX Phone: 817-727-7146 [email protected]

Western - North America San Diego, CA Phone: 978-250-3343 [email protected]

Mexico, Central & South America Dallas, TX Phone: 978-250-3343 x1250 [email protected]

Europe, Middle East & AfricaUnited Kingdom, Ireland, Spain & PortugalHittite Microwave Europe Limited Phone: +44-870-7664355 Fax: +978-250-3373 [email protected]

France & ItalyHittite Microwave Corporation Phone: 978-250-3343 Fax: 978-250-3373 [email protected]

Northern EuropeHittite Microwave nordic AB Phone: +46-761-763969 Fax: +978-250-3373 [email protected]

Benelux, Central & Eastern EuropeHittite Microwave Deutschland GmbH Phone: +49-8031-97654 Fax: +49-8031-98883 [email protected]

Greece & TurkeyHittite Microwave Corporation Phone: 978-250-3343 Fax: 978-250-3373 [email protected]

Middle East & AfricaHittite Microwave Corporation Phone: 978-250-3343 Fax: 978-250-3373 [email protected]

Russia & UkraineHittite Microwave Corporation Phone: 978-250-3343 Fax: 978-250-3373 [email protected]

Asia & PacificAustralia & New ZealandHittite Microwave Corporation Phone: 978-250-3343 Fax: 978-250-3373 [email protected]

IndiaHittite Microwave India Phone: +91-9849134642 Fax: +978-250-3373 [email protected]

Republic of KoreaHittite Microwave Asia Co., Limited Phone: +82-2559-0638 Fax: +82-2559-0639 [email protected]

Peoples Republic of ChinaHittite Microwave Co., Limited Shanghai Office Phone: +86-21-6209-8809 Fax: +86-21-6209-6730 [email protected]

Shenzhen Office Phone: +86-755-3322-20116 Fax: +86-755-3322-20117 [email protected]

Beijing Office Phone: +86-10-6485-9219 Fax: +86-10-6485-0377 [email protected]

JapanHittite KK Phone: +81-3-5652-5772 Fax: +81-3-5652-6694 [email protected]

Instrumentation Sales Representatives

AmericasBrazil; Vermont Rep. Com. Ltda +55 11 3726-6655

Canada; Repwave Calgary, Ottawa & Montreal: +613-270-9811 Toronto: +647-883-7360 Vancouver: +604-929-8541

Mexico, Central & South America; Hittite Microwave Corporation 978-250-3343 x1250

USA North East & Mid-Atlantic;

CT, MA, ME, nH, So. nJ, RI & VT: Microwave Marketing Specialist 978-392-0110

Western ny: Zimmerman Sales 585-381-3186

So. CT, Metro LI & no. nJ: Comp Tech 201-288-7400

Eastern PA & So. nJ Omega Electronic Sales, Inc. 215-244-4000

Western PA Schillinger Associates, Inc. 765-457-7241

DC, DE, MD, VA & WV: Vincent Pirro Electronics 410-489-9554

USA Mid-West;

IA Essig & Associates 319-363-8703

Mn, nD, SD & W. WI: Matrix Marketing Group 952-400-1070

IL & WI: TEQ Sales 847-742-3767

In, Ky, MI & OH: Schillinger Associates, Inc. 765-457-7241

KS & W. MO Quad State Sales & Marketing 918-499-1711

nE: HMC Central (north) - north America 312-458-8730

USA South East;

AL, FL, GA, MS, nC, SC & Tn: Precision Marketing Inc. 954-752-1700

USA South West;

AZ & nM: Saguaro Technical Sales, Inc. 480-947-3724

TX, OK, LA & AR: PMR Technologies, LP 817-483-5676

USA West;

CO, ID, uT, MT & Wy: Innovation RM 303-652-3030

no. CA & nV: Custom & Wireless Sales 408-371-0222

So. CA: Acetec 858-784-0900

OR & WA: Sea-Port Technical Sales 425-702-8300

Europe, Mid-East & AfricaAustria, Belgium, Czech Republic, Estonia, Germany, Hungary, Latvia, Lithuania, Luxemburg, netherlands, Poland, Slovakia, & Switzerland: Hittite Microwave Deutschland GmbH +49 8031-97654

Bosnia Herzegovina, Bulgaria, Croatia, Macedonia, Romania, Serbia Montenegro & Slovenia IC Electronika +386(0) 1 568-01-18

Denmark: ACTE A/S +45 46 900 400

Finland: LKC Oy +358-400-460-646

norway: Bredengen AS +47-2100-9100

Sweden: RF Partner AB +46-31-475100

France: L-TEQ Microwave +33-1-3007-7780

Ireland & united Kingdom: Hittite Microwave Europe Limited +44-870-7664355

Israel: Starlight Technologies, Inc. +972-3-9410555

Italy: Special-Ind SPA +39-02-6074741

Russia Radiant-Elcom Ltd. +7(495) 725-0404

Spain & Portugal: Altaix Electronica S.A.L +34-91-636-39-39

South Africa: RF Design Laboratory CC +27-21-555-8400

Turkey: EMPA Electronics +90 (212) 465-71-99

Asia & South PacificAustralia & new Zealand: Braemac +61-8-8275-0100

China & Hong Kong: Secom Telecom Co., Ltd. +86-755-25155888

Wai Tat Electronics Ltd. +852-2799-7393

India: Syratron +91-802-5591107/5591031

Indonesia, Malaysia,Philippines & Singapore MEDs Technologies, Pte., Ltd. +65-6453-8313

Japan: Daito Electron Co., Ltd +81-3-3237-1471

Rikei Corporation (Fiber Market) +81-3-3345-2150

Korea: JS Commtech +82-2-574-6100

EZ Hightech +82-031-382-6500

Taiwan R.O.C.: Bandtek International Co., Ltd. +886-2-2657-2615

North AmericaCT, MA, ME, nH, So. nJ, RI & VT: Hittite Microwave Corp 978-250-3343

nJ, ny & E. PA: Tera Tech 888-449-2799

AZ, CO, ID, MT, nM, uT & Wy: Technologies West (RMS) 602-312-3789

Europe, Mid-East & AfricaBelgium, Luxembourg & The netherlands: AR Benelux B.V. +31-172-423-000

Greece: Vector Technologies LTD +30-210-68-58-008

Turkey: Spark Olcum Teknolojileri Ltd. S +90 (312) 466 821

Asia & South PacificJapan:

Farad +82-3-5261-3091

Ref.# NL-0111

Sa

LE

S c

On

Ta

cT i

nFO

rM

aTiO

n

Documents

OFF-THE-SHELF J 2011radiant.su/files/catalog/post/67_january2011_newsletter-web.pdf · wideband/carrier, transceiver which is compact ... +34 dBm @ 20% PAE High Output IP3: +40 dBm